TW318261B - - Google Patents

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Publication number
TW318261B
TW318261B TW085111041A TW85111041A TW318261B TW 318261 B TW318261 B TW 318261B TW 085111041 A TW085111041 A TW 085111041A TW 85111041 A TW85111041 A TW 85111041A TW 318261 B TW318261 B TW 318261B
Authority
TW
Taiwan
Prior art keywords
wiring
forming
electrode
insulating film
film
Prior art date
Application number
TW085111041A
Other languages
English (en)
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW318261B publication Critical patent/TW318261B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H10W20/01—
    • H10W20/031—

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW085111041A 1995-09-21 1996-09-10 TW318261B (index.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26794295 1995-09-21

Publications (1)

Publication Number Publication Date
TW318261B true TW318261B (index.php) 1997-10-21

Family

ID=17451750

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111041A TW318261B (index.php) 1995-09-21 1996-09-10

Country Status (4)

Country Link
US (1) US6013542A (index.php)
KR (1) KR100297064B1 (index.php)
DE (1) DE19638433B4 (index.php)
TW (1) TW318261B (index.php)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6893980B1 (en) * 1996-12-03 2005-05-17 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method therefor
KR100276225B1 (ko) * 1998-06-01 2000-12-15 구본준 액정표시장치의 패드 단락 방지구조 및 그 방법
US6140162A (en) * 1998-06-19 2000-10-31 Lg Electronics Inc. Reduction of masking and doping steps in a method of fabricating a liquid crystal display
US6506635B1 (en) * 1999-02-12 2003-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of forming the same
JP3954532B2 (ja) * 2003-06-13 2007-08-08 沖電気工業株式会社 Ｓｏｉ半導体装置の製造方法及びｓｏｉ半導体装置
TWI366701B (en) * 2004-01-26 2012-06-21 Semiconductor Energy Lab Method of manufacturing display and television
CN100565307C (zh) * 2004-02-13 2009-12-02 株式会社半导体能源研究所 半导体器件及其制备方法，液晶电视系统，和el电视系统
US7183147B2 (en) 2004-03-25 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
KR101845480B1 (ko) 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
TWI692108B (zh) 2013-04-10 2020-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213261B (it) * 1984-12-20 1989-12-14 Sgs Thomson Microelectronics Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
US4740485A (en) * 1986-07-22 1988-04-26 Monolithic Memories, Inc. Method for forming a fuse
JPH01248536A (ja) * 1988-03-30 1989-10-04 Toshiba Corp 半導体装置の製造方法
JPH02285658A (ja) * 1989-04-26 1990-11-22 Nec Corp 半導体装置の製造方法
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
JPH04302166A (ja) * 1991-03-29 1992-10-26 Matsushita Electron Corp 半導体装置の製造方法
JP3019453B2 (ja) * 1991-03-30 2000-03-13 日本電気株式会社 半導体装置の製造方法
US5219793A (en) * 1991-06-03 1993-06-15 Motorola Inc. Method for forming pitch independent contacts and a semiconductor device having the same
JP3166221B2 (ja) * 1991-07-23 2001-05-14 日本電気株式会社 半導体装置及びその製造方法
US5422293A (en) * 1991-12-24 1995-06-06 Casio Computer Co., Ltd. Method for manufacturing a TFT panel
US5258328A (en) * 1992-03-16 1993-11-02 Kabushiki Kaisha Toshiba Method of forming multilayered wiring structure of semiconductor device
KR950008931B1 (ko) * 1992-07-22 1995-08-09 삼성전자주식회사 표시패널의 제조방법
JPH07221174A (ja) * 1993-12-10 1995-08-18 Canon Inc 半導体装置及びその製造方法
US5470790A (en) * 1994-10-17 1995-11-28 Intel Corporation Via hole profile and method of fabrication

Also Published As

Publication number Publication date
KR100297064B1 (ko) 2001-10-24
US6013542A (en) 2000-01-11
DE19638433A1 (de) 1997-03-27
DE19638433B4 (de) 2007-01-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees