TW317518B - - Google Patents

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Publication number
TW317518B
TW317518B TW084105089A TW84105089A TW317518B TW 317518 B TW317518 B TW 317518B TW 084105089 A TW084105089 A TW 084105089A TW 84105089 A TW84105089 A TW 84105089A TW 317518 B TW317518 B TW 317518B
Authority
TW
Taiwan
Prior art keywords
patent application
item
temperature
bonding
target
Prior art date
Application number
TW084105089A
Other languages
English (en)
Chinese (zh)
Original Assignee
Komatsu Oyo Gijyutsu Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Oyo Gijyutsu Kk filed Critical Komatsu Oyo Gijyutsu Kk
Application granted granted Critical
Publication of TW317518B publication Critical patent/TW317518B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW084105089A 1995-01-25 1995-05-22 TW317518B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1995/001089 WO1996023085A1 (en) 1995-01-25 1995-01-25 Autoclave bonding of sputtering target assembly

Publications (1)

Publication Number Publication Date
TW317518B true TW317518B (enExample) 1997-10-11

Family

ID=22248573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105089A TW317518B (enExample) 1995-01-25 1995-05-22

Country Status (5)

Country Link
EP (1) EP0752017A1 (enExample)
JP (1) JP3804974B2 (enExample)
AU (1) AU1834795A (enExample)
TW (1) TW317518B (enExample)
WO (1) WO1996023085A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11851748B2 (en) 2020-03-31 2023-12-26 Jx Metals Corporation Sputtering target and method for manufacturing a sputtering target

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983862B2 (ja) * 1997-10-24 2007-09-26 Ｄｏｗａホールディングス株式会社 スパッタリングターゲットとその接合方法及び接合装置
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US7993773B2 (en) 2002-08-09 2011-08-09 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
WO2004021532A1 (en) 2002-08-27 2004-03-11 Symmorphix, Inc. Optically coupling into highly uniform waveguides
US7205662B2 (en) 2003-02-27 2007-04-17 Symmorphix, Inc. Dielectric barrier layer films
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
KR101127370B1 (ko) 2004-12-08 2012-03-29 인피니트 파워 솔루션스, 인크. ＬｉＣｏＯ２의 증착
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US8342383B2 (en) * 2006-07-06 2013-01-01 Praxair Technology, Inc. Method for forming sputter target assemblies having a controlled solder thickness
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
TWI441937B (zh) 2007-12-21 2014-06-21 Infinite Power Solutions Inc 形成用於電解質薄膜之濺鍍靶材的方法
KR101606183B1 (ko) 2008-01-11 2016-03-25 사푸라스트 리써치 엘엘씨 박막 배터리 및 기타 소자를 위한 박막 캡슐화
US20100012488A1 (en) * 2008-07-15 2010-01-21 Koenigsmann Holger J Sputter target assembly having a low-temperature high-strength bond
KR20110058793A (ko) 2008-08-11 2011-06-01 인피니트 파워 솔루션스, 인크. 전자기 에너지를 수확하기 위한 일체형 컬렉터 표면을 갖는 에너지 디바이스 및 전자기 에너지를 수확하는 방법
KR101792287B1 (ko) 2009-09-01 2017-10-31 사푸라스트 리써치 엘엘씨 집적된 박막 배터리를 갖는 인쇄 회로 보드
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
KR101240204B1 (ko) * 2011-12-19 2013-03-07 주식회사 나노신소재 원통형 스퍼터링 타겟의 제조방법
CN107914075A (zh) * 2017-11-14 2018-04-17 宁波江丰电子材料股份有限公司 靶材焊接方法
JP7311290B2 (ja) * 2019-03-27 2023-07-19 Ｊｘ金属株式会社 分割スパッタリングターゲット及びその製造方法
CN113070685B (zh) * 2021-03-26 2022-05-03 安徽江淮汽车集团股份有限公司 包边与点焊一体化模具
CN113458523A (zh) * 2021-07-05 2021-10-01 宁波江丰电子材料股份有限公司 一种钽靶材组件的焊接方法
CN115609909B (zh) * 2022-10-14 2026-05-12 浙江大坤电器科技有限公司 一种针对蒸烤机门板进行玻璃预粘的加工装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63270459A (ja) * 1987-04-24 1988-11-08 Matsushita Electric Ind Co Ltd スパツタ用タ−ゲツトのボンデイング方法
JP2731152B2 (ja) * 1987-11-17 1998-03-25 日立金属株式会社 冷却部材付きスパッタリング用ターゲット
JPH03140464A (ja) * 1989-10-26 1991-06-14 Kobe Steel Ltd ターゲットのバッキング装置
GB9108553D0 (en) * 1991-04-22 1991-06-05 Ion Coat Ltd Ionised vapour source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11851748B2 (en) 2020-03-31 2023-12-26 Jx Metals Corporation Sputtering target and method for manufacturing a sputtering target

Also Published As

Publication number Publication date
EP0752017A1 (en) 1997-01-08
JP3804974B2 (ja) 2006-08-02
JPH10502707A (ja) 1998-03-10
AU1834795A (en) 1996-08-14
WO1996023085A1 (en) 1996-08-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees