TW312034B - - Google Patents
Download PDFInfo
- Publication number
- TW312034B TW312034B TW083100477A01A TW083100477A01A TW312034B TW 312034 B TW312034 B TW 312034B TW 083100477A01 A TW083100477A01 A TW 083100477A01A TW 083100477A01 A TW083100477A01 A TW 083100477A01A TW 312034 B TW312034 B TW 312034B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- crystal
- round
- signal
- holder
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 5
- 230000003068 static effect Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims 20
- 239000004744 fabric Substances 0.000 claims 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 230000002123 temporal effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 239000005394 sealing glass Substances 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- BDEDPKFUFGCVCJ-UHFFFAOYSA-N 3,6-dihydroxy-8,8-dimethyl-1-oxo-3,4,7,9-tetrahydrocyclopenta[h]isochromene-5-carbaldehyde Chemical compound O=C1OC(O)CC(C(C=O)=C2O)=C1C1=C2CC(C)(C)C1 BDEDPKFUFGCVCJ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/029,154 US5444597A (en) | 1993-01-15 | 1993-03-10 | Wafer release method and apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW312034B true TW312034B (enExample) | 1997-08-01 |
Family
ID=21847544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083100477A01A TW312034B (enExample) | 1993-03-10 | 1994-03-28 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5444597A (enExample) |
| EP (1) | EP0615281B1 (enExample) |
| JP (1) | JPH077074A (enExample) |
| KR (1) | KR100304241B1 (enExample) |
| CN (1) | CN1052112C (enExample) |
| CA (1) | CA2118619C (enExample) |
| DE (1) | DE69426163T2 (enExample) |
| TW (1) | TW312034B (enExample) |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5684669A (en) * | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Method for dechucking a workpiece from an electrostatic chuck |
| US5463525A (en) * | 1993-12-20 | 1995-10-31 | International Business Machines Corporation | Guard ring electrostatic chuck |
| US5467249A (en) * | 1993-12-20 | 1995-11-14 | International Business Machines Corporation | Electrostatic chuck with reference electrode |
| EP0871843B1 (en) * | 1994-10-17 | 2003-05-14 | Varian Semiconductor Equipment Associates Inc. | Mounting member and method for clamping a flat thin conductive workpiece |
| US5737175A (en) * | 1996-06-19 | 1998-04-07 | Lam Research Corporation | Bias-tracking D.C. power circuit for an electrostatic chuck |
| JPH1014266A (ja) * | 1996-06-21 | 1998-01-16 | Sony Corp | 静電チャック装置及び静電チャックを用いたウエハの保持方法及び静電チャックからのウエハの脱着方法 |
| US5793192A (en) * | 1996-06-28 | 1998-08-11 | Lam Research Corporation | Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system |
| US5818682A (en) * | 1996-08-13 | 1998-10-06 | Applied Materials, Inc. | Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck |
| JP3245369B2 (ja) * | 1996-11-20 | 2002-01-15 | 東京エレクトロン株式会社 | 被処理体を静電チャックから離脱する方法及びプラズマ処理装置 |
| US6075375A (en) * | 1997-06-11 | 2000-06-13 | Applied Materials, Inc. | Apparatus for wafer detection |
| US5933314A (en) * | 1997-06-27 | 1999-08-03 | Lam Research Corp. | Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks |
| US5886865A (en) * | 1998-03-17 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for predicting failure of an eletrostatic chuck |
| US5969934A (en) * | 1998-04-10 | 1999-10-19 | Varian Semiconductor Equipment Associats, Inc. | Electrostatic wafer clamp having low particulate contamination of wafers |
| US6790375B1 (en) * | 1998-09-30 | 2004-09-14 | Lam Research Corporation | Dechucking method and apparatus for workpieces in vacuum processors |
| US6125025A (en) * | 1998-09-30 | 2000-09-26 | Lam Research Corporation | Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors |
| US6965506B2 (en) * | 1998-09-30 | 2005-11-15 | Lam Research Corporation | System and method for dechucking a workpiece from an electrostatic chuck |
| US6113165A (en) * | 1998-10-02 | 2000-09-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-sensing wafer holder and method of using |
| US6238160B1 (en) * | 1998-12-02 | 2001-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd' | Method for transporting and electrostatically chucking a semiconductor wafer or the like |
| US6236555B1 (en) * | 1999-04-19 | 2001-05-22 | Applied Materials, Inc. | Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle |
| US6257001B1 (en) * | 1999-08-24 | 2001-07-10 | Lucent Technologies, Inc. | Cryogenic vacuum pump temperature sensor |
| US6496053B1 (en) * | 1999-10-13 | 2002-12-17 | International Business Machines Corporation | Corrosion insensitive fusible link using capacitance sensing for semiconductor devices |
| US6362946B1 (en) | 1999-11-02 | 2002-03-26 | Varian Semiconductor Equipment Associates, Inc. | Electrostatic wafer clamp having electrostatic seal for retaining gas |
| US6538873B1 (en) | 1999-11-02 | 2003-03-25 | Varian Semiconductor Equipment Associates, Inc. | Active electrostatic seal and electrostatic vacuum pump |
| US6307728B1 (en) * | 2000-01-21 | 2001-10-23 | Applied Materials, Inc. | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
| US6468384B1 (en) * | 2000-11-09 | 2002-10-22 | Novellus Systems, Inc. | Predictive wafer temperature control system and method |
| JP3935367B2 (ja) * | 2002-02-06 | 2007-06-20 | キヤノン株式会社 | 表示素子駆動回路用の電源回路、表示装置及びカメラ |
| DE10214272B4 (de) * | 2002-03-28 | 2004-09-02 | Forschungszentrum Jülich GmbH | Halterung für einen Wafer |
| US6710360B2 (en) | 2002-07-10 | 2004-03-23 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| US6774373B2 (en) * | 2002-07-29 | 2004-08-10 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| US6900444B2 (en) * | 2002-07-29 | 2005-05-31 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter |
| TWI304158B (en) * | 2003-01-15 | 2008-12-11 | Asml Netherlands Bv | Detection assembly and lithographic projection apparatus provided with such a detection assembly |
| US6740894B1 (en) | 2003-02-21 | 2004-05-25 | Axcelis Technologies, Inc. | Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor |
| US7100954B2 (en) | 2003-07-11 | 2006-09-05 | Nexx Systems, Inc. | Ultra-thin wafer handling system |
| US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
| US6947274B2 (en) * | 2003-09-08 | 2005-09-20 | Axcelis Technologies, Inc. | Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage |
| US7072166B2 (en) * | 2003-09-12 | 2006-07-04 | Axcelis Technologies, Inc. | Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage |
| US6946403B2 (en) * | 2003-10-28 | 2005-09-20 | Axcelis Technologies, Inc. | Method of making a MEMS electrostatic chuck |
| US6794664B1 (en) | 2003-12-04 | 2004-09-21 | Axcelis Technologies, Inc. | Umbilical cord facilities connection for an ion beam implanter |
| US7245357B2 (en) * | 2003-12-15 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN1655022A (zh) * | 2004-02-14 | 2005-08-17 | 鸿富锦精密工业（深圳）有限公司 | 基板贴合装置 |
| US6987272B2 (en) * | 2004-03-05 | 2006-01-17 | Axcelis Technologies, Inc. | Work piece transfer system for an ion beam implanter |
| US7030395B2 (en) * | 2004-08-06 | 2006-04-18 | Axcelis Technologies, Inc. | Workpiece support structure for an ion beam implanter featuring spherical sliding seal vacuum feedthrough |
| US7982195B2 (en) * | 2004-09-14 | 2011-07-19 | Axcelis Technologies, Inc. | Controlled dose ion implantation |
| KR100994299B1 (ko) | 2005-12-06 | 2010-11-12 | 가부시키가이샤 크리에이티브 테크놀러지 | 정전척용 전극 시트 및 정전척 |
| US7629597B2 (en) * | 2006-08-18 | 2009-12-08 | Axcelis Technologies, Inc. | Deposition reduction system for an ion implanter |
| US8013981B2 (en) | 2007-06-14 | 2011-09-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101295776B1 (ko) * | 2007-08-02 | 2013-08-12 | 삼성전자주식회사 | 직류 및 교류 전압들을 교대로 사용하는 웨이퍼의 디척킹방법 및 이를 채택하는 반도체 소자의 제조 장치 |
| CN102144285B (zh) | 2008-09-04 | 2013-01-02 | 创意科技股份有限公司 | 静电吸盘装置和基片的吸附状态判断方法 |
| JP5957287B2 (ja) * | 2012-05-10 | 2016-07-27 | 株式会社アルバック | 給電装置 |
| US9543110B2 (en) | 2013-12-20 | 2017-01-10 | Axcelis Technologies, Inc. | Reduced trace metals contamination ion source for an ion implantation system |
| US20150357151A1 (en) | 2014-06-10 | 2015-12-10 | Axcelis Technologies, Inc. | Ion implantation source with textured interior surfaces |
| CN108231515B (zh) * | 2018-01-11 | 2019-10-11 | 上海华虹宏力半导体制造有限公司 | 减薄后的硅片背面注入工艺中的传送方法 |
| US11280811B2 (en) * | 2019-06-17 | 2022-03-22 | Advanced Energy Industries, Inc. | High side current monitor |
| CN112133665B (zh) * | 2020-09-27 | 2025-07-04 | 北京京仪自动化装备技术股份有限公司 | 传送机械手 |
| JP2024067609A (ja) * | 2022-11-07 | 2024-05-17 | ローム株式会社 | 半導体装置 |
| CN119843252A (zh) * | 2024-12-27 | 2025-04-18 | 江苏微导纳米科技股份有限公司 | 沉积系统和晶圆位置监测方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4184188A (en) * | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
| US4384918A (en) * | 1980-09-30 | 1983-05-24 | Fujitsu Limited | Method and apparatus for dry etching and electrostatic chucking device used therein |
| GB2147459A (en) * | 1983-09-30 | 1985-05-09 | Philips Electronic Associated | Electrostatic chuck for semiconductor wafers |
| JPS6216540A (ja) * | 1985-07-15 | 1987-01-24 | Canon Inc | ウエハ搬送装置 |
| JPS63257481A (ja) * | 1987-04-14 | 1988-10-25 | Abisare:Kk | 静電保持装置 |
| EP0297227B1 (en) * | 1987-04-14 | 1993-03-17 | Abisare Co., Ltd. | Machine unit having retaining device using static electricity |
| US5103367A (en) * | 1987-05-06 | 1992-04-07 | Unisearch Limited | Electrostatic chuck using A.C. field excitation |
| US4962441A (en) * | 1989-04-10 | 1990-10-09 | Applied Materials, Inc. | Isolated electrostatic wafer blade clamp |
| JP2779950B2 (ja) * | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | 静電チャックの電圧印加方法および電圧印加装置 |
| US5173834A (en) * | 1989-06-02 | 1992-12-22 | Roland Dg Corporation | Electrostatic attraction apparatus |
| US5179498A (en) * | 1990-05-17 | 1993-01-12 | Tokyo Electron Limited | Electrostatic chuck device |
| EP0460954B1 (en) * | 1990-06-08 | 1994-09-21 | Varian Associates, Inc. | Clamping a workpiece |
| EP0460955A1 (en) * | 1990-06-08 | 1991-12-11 | Varian Associates, Inc. | Clamping a workpiece utilizing polyphase clamping voltage |
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US5184398A (en) * | 1991-08-30 | 1993-02-09 | Texas Instruments Incorporated | In-situ real-time sheet resistance measurement method |
| US5315473A (en) * | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
-
1993
- 1993-03-10 US US08/029,154 patent/US5444597A/en not_active Expired - Lifetime
-
1994
- 1994-03-08 DE DE69426163T patent/DE69426163T2/de not_active Expired - Fee Related
- 1994-03-08 EP EP94301606A patent/EP0615281B1/en not_active Expired - Lifetime
- 1994-03-09 CA CA002118619A patent/CA2118619C/en not_active Expired - Fee Related
- 1994-03-09 KR KR1019940004577A patent/KR100304241B1/ko not_active Expired - Fee Related
- 1994-03-10 CN CN94102462A patent/CN1052112C/zh not_active Expired - Fee Related
- 1994-03-10 JP JP6674094A patent/JPH077074A/ja active Pending
- 1994-03-28 TW TW083100477A01A patent/TW312034B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| DE69426163D1 (de) | 2000-11-30 |
| DE69426163T2 (de) | 2001-05-23 |
| CA2118619A1 (en) | 1994-09-11 |
| JPH077074A (ja) | 1995-01-10 |
| EP0615281A1 (en) | 1994-09-14 |
| US5444597A (en) | 1995-08-22 |
| KR940022782A (ko) | 1994-10-21 |
| KR100304241B1 (ko) | 2001-11-30 |
| CN1095526A (zh) | 1994-11-23 |
| CN1052112C (zh) | 2000-05-03 |
| CA2118619C (en) | 2000-04-04 |
| EP0615281B1 (en) | 2000-10-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW312034B (enExample) | ||
| US5436790A (en) | Wafer sensing and clamping monitor | |
| US5258047A (en) | Holder device and semiconductor producing apparatus having same | |
| JP5135306B2 (ja) | 真空プロセッサ中の誘電体工作物のための静電デチャッキング方法および装置 | |
| US5103367A (en) | Electrostatic chuck using A.C. field excitation | |
| TW419775B (en) | Pressure actuated sealing diaphragm for chucks | |
| JP4666219B2 (ja) | コンテナ | |
| TW410414B (en) | Electrostatic wafer clamp having low particulate contamination of wafers | |
| US5539179A (en) | Electrostatic chuck having a multilayer structure for attracting an object | |
| JP2001284442A (ja) | 静電チャック及びその製造方法 | |
| JPH0652758B2 (ja) | 静電チヤツク | |
| JP2695436B2 (ja) | 静電チャックの劣化検出回路 | |
| TW406346B (en) | Method and apparatus for cooling a workpiece using an electrostatic chuck | |
| JPH07130826A (ja) | 静電チャック | |
| JPH10127072A (ja) | 静電吸着装置、静電吸着力測定方法 | |
| JPH07130827A (ja) | ウエーハ静電吸着装置 | |
| CN117855069A (zh) | 一种静电卡盘上晶片状态的检测方法、电路、设备、介质 | |
| JPH0866071A (ja) | 静電吸着装置 | |
| JPH0479932B2 (enExample) | ||
| JPH0216749A (ja) | 電子ビーム露光装置用ウェハーホルダ | |
| JPH04162443A (ja) | 静電チャック装置 | |
| JP2004120921A (ja) | 静電保持装置及びそれを用いた搬送装置又はステージ | |
| TW380292B (en) | Electrostatic attachment electrode and manufacturing method thereof | |
| JP2000156400A (ja) | 基板の分離方法および分離装置 | |
| JPS61270046A (ja) | 静電チヤツク装置 |