CN1052112C - 控制半导体圆片的离子植入方法和设备 - Google Patents

控制半导体圆片的离子植入方法和设备 Download PDF

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Publication number
CN1052112C
CN1052112C CN94102462A CN94102462A CN1052112C CN 1052112 C CN1052112 C CN 1052112C CN 94102462 A CN94102462 A CN 94102462A CN 94102462 A CN94102462 A CN 94102462A CN 1052112 C CN1052112 C CN 1052112C
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CN
China
Prior art keywords
disk
support
electrodes
wafer
fixed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN94102462A
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English (en)
Chinese (zh)
Other versions
CN1095526A (zh
Inventor
J·G·布莱克
W·L·杜
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Axcelis Technologies Inc
Original Assignee
Eaton Corp
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Filing date
Publication date
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Publication of CN1095526A publication Critical patent/CN1095526A/zh
Application granted granted Critical
Publication of CN1052112C publication Critical patent/CN1052112C/zh
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Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
CN94102462A 1993-03-10 1994-03-10 控制半导体圆片的离子植入方法和设备 Expired - Fee Related CN1052112C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US029154 1993-03-10
US029,154 1993-03-10
US08/029,154 US5444597A (en) 1993-01-15 1993-03-10 Wafer release method and apparatus

Publications (2)

Publication Number Publication Date
CN1095526A CN1095526A (zh) 1994-11-23
CN1052112C true CN1052112C (zh) 2000-05-03

Family

ID=21847544

Family Applications (1)

Application Number Title Priority Date Filing Date
CN94102462A Expired - Fee Related CN1052112C (zh) 1993-03-10 1994-03-10 控制半导体圆片的离子植入方法和设备

Country Status (8)

Country Link
US (1) US5444597A (enExample)
EP (1) EP0615281B1 (enExample)
JP (1) JPH077074A (enExample)
KR (1) KR100304241B1 (enExample)
CN (1) CN1052112C (enExample)
CA (1) CA2118619C (enExample)
DE (1) DE69426163T2 (enExample)
TW (1) TW312034B (enExample)

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US5737175A (en) * 1996-06-19 1998-04-07 Lam Research Corporation Bias-tracking D.C. power circuit for an electrostatic chuck
JPH1014266A (ja) * 1996-06-21 1998-01-16 Sony Corp 静電チャック装置及び静電チャックを用いたウエハの保持方法及び静電チャックからのウエハの脱着方法
US5793192A (en) * 1996-06-28 1998-08-11 Lam Research Corporation Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
US5818682A (en) * 1996-08-13 1998-10-06 Applied Materials, Inc. Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck
JP3245369B2 (ja) * 1996-11-20 2002-01-15 東京エレクトロン株式会社 被処理体を静電チャックから離脱する方法及びプラズマ処理装置
US6075375A (en) * 1997-06-11 2000-06-13 Applied Materials, Inc. Apparatus for wafer detection
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
US5886865A (en) * 1998-03-17 1999-03-23 Applied Materials, Inc. Method and apparatus for predicting failure of an eletrostatic chuck
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6113165A (en) * 1998-10-02 2000-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Self-sensing wafer holder and method of using
US6238160B1 (en) * 1998-12-02 2001-05-29 Taiwan Semiconductor Manufacturing Company, Ltd' Method for transporting and electrostatically chucking a semiconductor wafer or the like
US6236555B1 (en) * 1999-04-19 2001-05-22 Applied Materials, Inc. Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
US6257001B1 (en) * 1999-08-24 2001-07-10 Lucent Technologies, Inc. Cryogenic vacuum pump temperature sensor
US6496053B1 (en) * 1999-10-13 2002-12-17 International Business Machines Corporation Corrosion insensitive fusible link using capacitance sensing for semiconductor devices
US6362946B1 (en) 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
US6538873B1 (en) 1999-11-02 2003-03-25 Varian Semiconductor Equipment Associates, Inc. Active electrostatic seal and electrostatic vacuum pump
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
US6468384B1 (en) * 2000-11-09 2002-10-22 Novellus Systems, Inc. Predictive wafer temperature control system and method
JP3935367B2 (ja) * 2002-02-06 2007-06-20 キヤノン株式会社 表示素子駆動回路用の電源回路、表示装置及びカメラ
DE10214272B4 (de) * 2002-03-28 2004-09-02 Forschungszentrum Jülich GmbH Halterung für einen Wafer
US6710360B2 (en) 2002-07-10 2004-03-23 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter
US6774373B2 (en) * 2002-07-29 2004-08-10 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter
US6900444B2 (en) * 2002-07-29 2005-05-31 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter
TWI304158B (en) * 2003-01-15 2008-12-11 Asml Netherlands Bv Detection assembly and lithographic projection apparatus provided with such a detection assembly
US6740894B1 (en) 2003-02-21 2004-05-25 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter utilizing a linear scan motor
US7100954B2 (en) 2003-07-11 2006-09-05 Nexx Systems, Inc. Ultra-thin wafer handling system
US7072165B2 (en) * 2003-08-18 2006-07-04 Axcelis Technologies, Inc. MEMS based multi-polar electrostatic chuck
US6947274B2 (en) * 2003-09-08 2005-09-20 Axcelis Technologies, Inc. Clamping and de-clamping semiconductor wafers on an electrostatic chuck using wafer inertial confinement by applying a single-phase square wave AC clamping voltage
US7072166B2 (en) * 2003-09-12 2006-07-04 Axcelis Technologies, Inc. Clamping and de-clamping semiconductor wafers on a J-R electrostatic chuck having a micromachined surface by using force delay in applying a single-phase square wave AC clamping voltage
US6946403B2 (en) * 2003-10-28 2005-09-20 Axcelis Technologies, Inc. Method of making a MEMS electrostatic chuck
US6794664B1 (en) 2003-12-04 2004-09-21 Axcelis Technologies, Inc. Umbilical cord facilities connection for an ion beam implanter
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1655022A (zh) * 2004-02-14 2005-08-17 鸿富锦精密工业(深圳)有限公司 基板贴合装置
US6987272B2 (en) * 2004-03-05 2006-01-17 Axcelis Technologies, Inc. Work piece transfer system for an ion beam implanter
US7030395B2 (en) * 2004-08-06 2006-04-18 Axcelis Technologies, Inc. Workpiece support structure for an ion beam implanter featuring spherical sliding seal vacuum feedthrough
US7982195B2 (en) * 2004-09-14 2011-07-19 Axcelis Technologies, Inc. Controlled dose ion implantation
KR100994299B1 (ko) 2005-12-06 2010-11-12 가부시키가이샤 크리에이티브 테크놀러지 정전척용 전극 시트 및 정전척
US7629597B2 (en) * 2006-08-18 2009-12-08 Axcelis Technologies, Inc. Deposition reduction system for an ion implanter
US8013981B2 (en) 2007-06-14 2011-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101295776B1 (ko) * 2007-08-02 2013-08-12 삼성전자주식회사 직류 및 교류 전압들을 교대로 사용하는 웨이퍼의 디척킹방법 및 이를 채택하는 반도체 소자의 제조 장치
CN102144285B (zh) 2008-09-04 2013-01-02 创意科技股份有限公司 静电吸盘装置和基片的吸附状态判断方法
JP5957287B2 (ja) * 2012-05-10 2016-07-27 株式会社アルバック 給電装置
US9543110B2 (en) 2013-12-20 2017-01-10 Axcelis Technologies, Inc. Reduced trace metals contamination ion source for an ion implantation system
US20150357151A1 (en) 2014-06-10 2015-12-10 Axcelis Technologies, Inc. Ion implantation source with textured interior surfaces
CN108231515B (zh) * 2018-01-11 2019-10-11 上海华虹宏力半导体制造有限公司 减薄后的硅片背面注入工艺中的传送方法
US11280811B2 (en) * 2019-06-17 2022-03-22 Advanced Energy Industries, Inc. High side current monitor
CN112133665B (zh) * 2020-09-27 2025-07-04 北京京仪自动化装备技术股份有限公司 传送机械手
JP2024067609A (ja) * 2022-11-07 2024-05-17 ローム株式会社 半導体装置
CN119843252A (zh) * 2024-12-27 2025-04-18 江苏微导纳米科技股份有限公司 沉积系统和晶圆位置监测方法

Citations (2)

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Publication number Priority date Publication date Assignee Title
WO1988009054A1 (en) * 1987-05-06 1988-11-17 Labtam Limited Electrostatic chuck using ac field excitation
FR2676603A1 (fr) * 1991-05-17 1992-11-20 Unisearch Ltd Procede et appareil de retenue electrostatique d'un corps.

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US4184188A (en) * 1978-01-16 1980-01-15 Veeco Instruments Inc. Substrate clamping technique in IC fabrication processes
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
GB2147459A (en) * 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
JPS6216540A (ja) * 1985-07-15 1987-01-24 Canon Inc ウエハ搬送装置
JPS63257481A (ja) * 1987-04-14 1988-10-25 Abisare:Kk 静電保持装置
EP0297227B1 (en) * 1987-04-14 1993-03-17 Abisare Co., Ltd. Machine unit having retaining device using static electricity
US4962441A (en) * 1989-04-10 1990-10-09 Applied Materials, Inc. Isolated electrostatic wafer blade clamp
JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
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FR2676603A1 (fr) * 1991-05-17 1992-11-20 Unisearch Ltd Procede et appareil de retenue electrostatique d'un corps.

Also Published As

Publication number Publication date
DE69426163D1 (de) 2000-11-30
DE69426163T2 (de) 2001-05-23
CA2118619A1 (en) 1994-09-11
JPH077074A (ja) 1995-01-10
EP0615281A1 (en) 1994-09-14
US5444597A (en) 1995-08-22
TW312034B (enExample) 1997-08-01
KR940022782A (ko) 1994-10-21
KR100304241B1 (ko) 2001-11-30
CN1095526A (zh) 1994-11-23
CA2118619C (en) 2000-04-04
EP0615281B1 (en) 2000-10-25

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C53 Correction of patent for invention or patent application
COR Change of bibliographic data

Free format text: CORRECT: PATENTEE; FROM: EATON CORP. TO: AXCELIS TECH INC.

CP03 Change of name, title or address

Address after: Massachusetts, USA

Patentee after: Esselis Technologies Co.

Address before: ohio

Patentee before: Eaton Corp.

C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20000503

Termination date: 20100310