TW302483B - The semiconductor memory device - Google Patents

The semiconductor memory device Download PDF

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Publication number
TW302483B
TW302483B TW085105085A TW85105085A TW302483B TW 302483 B TW302483 B TW 302483B TW 085105085 A TW085105085 A TW 085105085A TW 85105085 A TW85105085 A TW 85105085A TW 302483 B TW302483 B TW 302483B
Authority
TW
Taiwan
Prior art keywords
memory
line
bit line
potential
output
Prior art date
Application number
TW085105085A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshitomo Nanamiya
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Application granted granted Critical
Publication of TW302483B publication Critical patent/TW302483B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
TW085105085A 1995-05-02 1996-04-29 The semiconductor memory device TW302483B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13266695 1995-05-02
JP7420496A JP3726337B2 (ja) 1995-05-02 1996-03-28 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW302483B true TW302483B (en) 1997-04-11

Family

ID=26415332

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105085A TW302483B (en) 1995-05-02 1996-04-29 The semiconductor memory device

Country Status (3)

Country Link
JP (1) JP3726337B2 (ja)
KR (1) KR100200012B1 (ja)
TW (1) TW302483B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202014106307U1 (de) 2014-12-30 2015-02-25 E-Lead Electronic Co., Ltd. Verstärktes Ventil

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1310963B1 (en) * 2000-06-29 2006-12-27 Fujitsu Limited Semiconductor memory device
JP4684719B2 (ja) * 2005-04-07 2011-05-18 パナソニック株式会社 半導体記憶装置
JP5585491B2 (ja) * 2011-02-23 2014-09-10 富士通セミコンダクター株式会社 半導体メモリおよびシステム
JP5665789B2 (ja) * 2012-03-28 2015-02-04 株式会社東芝 コンフィギュレーションメモリ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202014106307U1 (de) 2014-12-30 2015-02-25 E-Lead Electronic Co., Ltd. Verstärktes Ventil

Also Published As

Publication number Publication date
KR100200012B1 (ko) 1999-06-15
JPH0922600A (ja) 1997-01-21
KR960042762A (ko) 1996-12-21
JP3726337B2 (ja) 2005-12-14

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees