KR100200012B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

Info

Publication number
KR100200012B1
KR100200012B1 KR1019960014305A KR19960014305A KR100200012B1 KR 100200012 B1 KR100200012 B1 KR 100200012B1 KR 1019960014305 A KR1019960014305 A KR 1019960014305A KR 19960014305 A KR19960014305 A KR 19960014305A KR 100200012 B1 KR100200012 B1 KR 100200012B1
Authority
KR
South Korea
Prior art keywords
memory
bit line
local bit
line
lines
Prior art date
Application number
KR1019960014305A
Other languages
English (en)
Korean (ko)
Other versions
KR960042762A (ko
Inventor
요시토모 나나미야
Original Assignee
우에시마 세이스케
야마하 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우에시마 세이스케, 야마하 가부시키가이샤 filed Critical 우에시마 세이스케
Publication of KR960042762A publication Critical patent/KR960042762A/ko
Application granted granted Critical
Publication of KR100200012B1 publication Critical patent/KR100200012B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
KR1019960014305A 1995-05-02 1996-05-02 반도체 기억장치 KR100200012B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP95-132666 1995-05-02
JP13266695 1995-05-02
JP96-74204 1996-03-28
JP7420496A JP3726337B2 (ja) 1995-05-02 1996-03-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR960042762A KR960042762A (ko) 1996-12-21
KR100200012B1 true KR100200012B1 (ko) 1999-06-15

Family

ID=26415332

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960014305A KR100200012B1 (ko) 1995-05-02 1996-05-02 반도체 기억장치

Country Status (3)

Country Link
JP (1) JP3726337B2 (ja)
KR (1) KR100200012B1 (ja)
TW (1) TW302483B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1310963B1 (en) * 2000-06-29 2006-12-27 Fujitsu Limited Semiconductor memory device
JP4684719B2 (ja) * 2005-04-07 2011-05-18 パナソニック株式会社 半導体記憶装置
JP5585491B2 (ja) * 2011-02-23 2014-09-10 富士通セミコンダクター株式会社 半導体メモリおよびシステム
JP5665789B2 (ja) * 2012-03-28 2015-02-04 株式会社東芝 コンフィギュレーションメモリ
DE202014106307U1 (de) 2014-12-30 2015-02-25 E-Lead Electronic Co., Ltd. Verstärktes Ventil

Also Published As

Publication number Publication date
KR960042762A (ko) 1996-12-21
JP3726337B2 (ja) 2005-12-14
JPH0922600A (ja) 1997-01-21
TW302483B (en) 1997-04-11

Similar Documents

Publication Publication Date Title
US4884241A (en) Nonvolatile semiconductor memory device
KR100538883B1 (ko) 반도체 메모리 장치
KR100745368B1 (ko) 개선된 데이터 입출력 경로를 갖는 반도체 메모리 장치
KR970011133B1 (ko) 반도체 메모리
US5185722A (en) Semiconductor memory device having a memory test circuit
KR920013447A (ko) 기록 주기동안 데이터의 변화에 따라 등화하는 열을 가지는 반도체메모리
JPH08273365A (ja) 半導体記憶装置
US4872142A (en) Semiconductor memory device with improved bit line arrangement
KR920009059B1 (ko) 반도체 메모리 장치의 병렬 테스트 방법
EP0505926A1 (en) Multiport memory
US6643805B1 (en) Memory circuit being capable of compression test
US4870618A (en) Semiconductor memory equipped with test circuit for testing data holding characteristic during data programming period
KR20040070752A (ko) 리드 전용 메모리 장치
US6141277A (en) Semiconductor memory preventing sense amplifier malfunctions due to effects of noise generated in output buffer
KR100200012B1 (ko) 반도체 기억장치
JPH06290591A (ja) 半導体不揮発性記憶装置
US4602355A (en) Memory circuit with noise preventing means for word lines
US6307772B1 (en) Static type semiconductor memory device for lower current consumption
US20030095438A1 (en) Nonvolatile semiconductor memory device having function of determining good sector
EP0271283B1 (en) Static semiconductor memory device having improved pull-up operation for bit lines
KR100318464B1 (ko) 재쓰기회로를갖는스태틱램디바이스
US4620299A (en) Row decoder
JP6600725B2 (ja) 新たなセンシングシーケンス制御法による不揮発メモリ
JPH09198886A (ja) 半導体記憶装置
KR20010110213A (ko) 반도체메모리장치

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080225

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee