TW299476B - - Google Patents

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Publication number
TW299476B
TW299476B TW083106350A TW83106350A TW299476B TW 299476 B TW299476 B TW 299476B TW 083106350 A TW083106350 A TW 083106350A TW 83106350 A TW83106350 A TW 83106350A TW 299476 B TW299476 B TW 299476B
Authority
TW
Taiwan
Prior art keywords
region
nitrogen
source
semiconductor substrate
type
Prior art date
Application number
TW083106350A
Other languages
English (en)
Chinese (zh)
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06140542A external-priority patent/JP3015253B2/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW299476B publication Critical patent/TW299476B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10P30/204—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
    • H10P30/208—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW083106350A 1994-06-22 1994-07-13 TW299476B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06140542A JP3015253B2 (ja) 1994-06-22 1994-06-22 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW299476B true TW299476B (enExample) 1997-03-01

Family

ID=15271102

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083106350A TW299476B (enExample) 1994-06-22 1994-07-13

Country Status (3)

Country Link
US (2) US6153910A (enExample)
KR (1) KR100205194B1 (enExample)
TW (1) TW299476B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100342380B1 (ko) * 1995-11-23 2002-11-04 주식회사 코오롱 고강도저수축성폴리에스터섬유의제조방법
JP4030198B2 (ja) * 1998-08-11 2008-01-09 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US8389370B2 (en) * 1999-08-02 2013-03-05 Schilmass Co. L.L.C. Radiation-tolerant integrated circuit device and method for fabricating
TW449836B (en) * 1999-09-06 2001-08-11 Winbond Electronics Corp Manufacturing method and device for forming anti-punch-through region by large-angle-tilt implantation
US7015546B2 (en) * 2000-02-23 2006-03-21 Semiconductor Research Corporation Deterministically doped field-effect devices and methods of making same
US6809016B1 (en) * 2003-03-06 2004-10-26 Advanced Micro Devices, Inc. Diffusion stop implants to suppress as punch-through in SiGe
US7105414B2 (en) * 2003-12-27 2006-09-12 Dongbu Electronics Co., Ltd. Method of manufacturing MOS transistor

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756970A (en) * 1980-09-22 1982-04-05 Oki Electric Ind Co Ltd Manufacture of insulated gate type field effect semiconductor device
JPS59231863A (ja) * 1983-06-15 1984-12-26 Hitachi Ltd 絶縁ゲ−ト半導体装置とその製造法
JPH0612826B2 (ja) * 1984-10-22 1994-02-16 セイコーエプソン株式会社 薄膜トランジスタの製造方法
EP0222215B1 (en) * 1985-10-23 1991-10-16 Hitachi, Ltd. Polysilicon mos transistor and method of manufacturing the same
US4755865A (en) * 1986-01-21 1988-07-05 Motorola Inc. Means for stabilizing polycrystalline semiconductor layers
JPS62212627A (ja) * 1986-03-14 1987-09-18 Hitachi Ltd 液晶表示素子製造方法
US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide
JP2635096B2 (ja) * 1988-05-06 1997-07-30 株式会社日立製作所 半導体装置及びその製造方法
JPH02162360A (ja) * 1988-12-16 1990-06-21 Canon Inc 加熱定着方法及び該定着用カプセルトナー
JPH02187035A (ja) * 1989-01-13 1990-07-23 Fujitsu Ltd 半導体装置の製造方法
JPH0342872A (ja) * 1989-07-10 1991-02-25 Seiko Instr Inc 半導体装置の製造方法
JP2860482B2 (ja) * 1989-07-11 1999-02-24 セイコーインスツルメンツ株式会社 半導体装置の製造方法
JPH0346272A (ja) * 1989-07-13 1991-02-27 Seiko Instr Inc 半導体装置の製造方法
JPH0366165A (ja) * 1989-08-04 1991-03-20 Seiko Instr Inc 半導体基板への不純物拡散方法
JPH05218355A (ja) * 1992-02-05 1993-08-27 Seiko Epson Corp Ｍｉｓ型半導体装置及びその製造方法
JPH05315318A (ja) * 1992-05-13 1993-11-26 Nippon Telegr & Teleph Corp <Ntt> 酸化シリコン膜の形成法およびそれを用いた電界効果トランジスタの製造方法
JPH0629314A (ja) * 1992-07-08 1994-02-04 Hitachi Ltd 半導体装置及びその製造方法
JP3567465B2 (ja) * 1992-08-20 2004-09-22 富士通株式会社 半導体装置の製造方法
JP3830541B2 (ja) * 1993-09-02 2006-10-04 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JPH07211902A (ja) * 1994-01-19 1995-08-11 Sony Corp Ｍｉｓ型トランジスタ及びその作製方法
JP3015253B2 (ja) * 1994-06-22 2000-03-06 三菱電機株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR100205194B1 (ko) 1999-07-01
KR960002889A (ko) 1996-01-26
US6153910A (en) 2000-11-28
US6380036B1 (en) 2002-04-30

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