TW297952B - - Google Patents
Download PDFInfo
- Publication number
- TW297952B TW297952B TW085104638A TW85104638A TW297952B TW 297952 B TW297952 B TW 297952B TW 085104638 A TW085104638 A TW 085104638A TW 85104638 A TW85104638 A TW 85104638A TW 297952 B TW297952 B TW 297952B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gate
- current
- semiconductor
- source
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 3
- 239000003792 electrolyte Substances 0.000 claims 1
- 230000008859 change Effects 0.000 description 7
- 241000894007 species Species 0.000 description 7
- 239000013626 chemical specie Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011540 sensing material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- NCYCYZXNIZJOKI-IOUUIBBYSA-N 11-cis-retinal Chemical compound O=C/C=C(\C)/C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C NCYCYZXNIZJOKI-IOUUIBBYSA-N 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- 102000004330 Rhodopsin Human genes 0.000 description 1
- 108090000820 Rhodopsin Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S436/00—Chemistry: analytical and immunological testing
- Y10S436/806—Electrical property or magnetic property
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/496,269 US5719033A (en) | 1995-06-28 | 1995-06-28 | Thin film transistor bio/chemical sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW297952B true TW297952B (enExample) | 1997-02-11 |
Family
ID=23971935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085104638A TW297952B (enExample) | 1995-06-28 | 1996-04-18 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5719033A (enExample) |
| EP (1) | EP0751392A3 (enExample) |
| JP (1) | JPH0915198A (enExample) |
| KR (1) | KR970003739A (enExample) |
| CN (1) | CN1119652C (enExample) |
| TW (1) | TW297952B (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997039145A1 (en) * | 1996-04-17 | 1997-10-23 | Motorola Inc. | Transistor-based molecular detection apparatus and method |
| US20030180441A1 (en) * | 1997-09-30 | 2003-09-25 | Hitoshi Fukushima | Manufacture of a microsensor device and a method for evaluating the function of a liquid by the use thereof |
| JP2000033712A (ja) * | 1997-09-30 | 2000-02-02 | Seiko Epson Corp | マイクロセンサーデバイス作成方法及びそれを用いた液体機能評価方法 |
| US6030827A (en) * | 1998-01-23 | 2000-02-29 | I-Stat Corporation | Microfabricated aperture-based sensor |
| US6322963B1 (en) | 1998-06-15 | 2001-11-27 | Biosensor Systems Design., Inc. | Sensor for analyte detection |
| DE19857953C2 (de) * | 1998-12-16 | 2001-02-15 | Conducta Endress & Hauser | Vorrichtung zum Messen der Konzentration von Ionen in einer Meßflüssigkeit |
| US6503701B1 (en) | 1999-06-15 | 2003-01-07 | Biosensor Systems Design, Inc. | Analytic sensor apparatus and method |
| US6342347B1 (en) | 1999-10-22 | 2002-01-29 | Biosensor Systems Design., Inc. | Electromagnetic sensor |
| JP4587539B2 (ja) * | 1999-09-13 | 2010-11-24 | アイメック | 有機材料に基づいてサンプル中の被分析物を検出するための装置 |
| GB2370410A (en) * | 2000-12-22 | 2002-06-26 | Seiko Epson Corp | Thin film transistor sensor |
| US20020086430A1 (en) * | 2000-12-28 | 2002-07-04 | Hopmeier Michael J. | Detection technology in agriculture operations |
| US6887667B2 (en) * | 2000-12-28 | 2005-05-03 | Alfred E. Mann Institute For Biomedical Engineering At The University Of Southern California | Method and apparatus to identify small variations of biomolecules |
| US8362559B2 (en) * | 2002-02-01 | 2013-01-29 | William Marsh Rice University | Hybrid molecular electronic devices containing molecule-functionalized surfaces for switching, memory, and sensor applications and methods for fabricating same |
| US20080258179A1 (en) * | 2004-06-21 | 2008-10-23 | William Marsh Rice University | Hybrid molecular electronic device for switching, memory, and sensor applications, and method of fabricating same |
| EP1348951A1 (en) * | 2002-03-29 | 2003-10-01 | Interuniversitair Micro-Elektronica Centrum | Molecularly controlled dual gated field effect transistor for sensing applications |
| EP1353170A3 (en) * | 2002-03-28 | 2004-02-04 | Interuniversitair Micro-Elektronica Centrum (IMEC) | Field effect transistor for sensing applications |
| DE10221799A1 (de) * | 2002-05-15 | 2003-11-27 | Fujitsu Ltd | Silicon-on-Insulator-Biosensor |
| DE10226945A1 (de) * | 2002-06-17 | 2004-01-08 | Infineon Technologies Ag | Feldeffekttransistor auf Basis eines organischen Halbleitermaterials |
| US20050093425A1 (en) * | 2002-08-01 | 2005-05-05 | Sanyo Electric Co., Ltd | Optical sensor, method of manufacturing and driving an optical sensor, method of detecting light intensity |
| US6852996B2 (en) * | 2002-09-25 | 2005-02-08 | Stmicroelectronics, Inc. | Organic semiconductor sensor device |
| US20040197821A1 (en) * | 2003-04-04 | 2004-10-07 | Bauer Alan Joseph | Rapid-detection biosensor |
| JP4669213B2 (ja) * | 2003-08-29 | 2011-04-13 | 独立行政法人科学技術振興機構 | 電界効果トランジスタ及び単一電子トランジスタ並びにそれを用いたセンサ |
| US7361946B2 (en) | 2004-06-28 | 2008-04-22 | Nitronex Corporation | Semiconductor device-based sensors |
| US7470544B2 (en) * | 2005-05-26 | 2008-12-30 | Hewlett-Packard Development Company, L.P. | Sensor array using sail |
| KR100659112B1 (ko) * | 2005-11-22 | 2006-12-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이의 제조 방법, 이를 구비한평판 디스플레이 장치 |
| US8384409B2 (en) * | 2007-05-03 | 2013-02-26 | The Regents Of The University Of California | Ultra-thin organic TFT chemical sensor, making thereof, and sensing method |
| WO2009017631A2 (en) * | 2007-07-26 | 2009-02-05 | The Regents Of The University Of California | Peroxide chemical sensor and sensing method |
| KR100903526B1 (ko) * | 2007-10-19 | 2009-06-19 | 재단법인대구경북과학기술원 | 전계효과트랜지스터를 이용한 바이오센서 |
| US8551407B2 (en) * | 2007-11-29 | 2013-10-08 | Michigan Technological University | Bacteriorhodopsin-based sensors |
| US9023607B2 (en) * | 2010-04-26 | 2015-05-05 | Intellectual Discovery Co., Ltd. | Method for early diagnosis of alzheimer'S disease using phototransistor |
| WO2012003368A2 (en) * | 2010-06-30 | 2012-01-05 | Life Technologies Corporation | Transistor circuits for detection and measurement of chemical reactions and compounds |
| US8373206B2 (en) | 2010-07-20 | 2013-02-12 | Nth Tech Corporation | Biosensor apparatuses and methods thereof |
| TW201237411A (en) * | 2011-03-04 | 2012-09-16 | Univ Nat Chiao Tung | Biochemical matter sensor and manufacturing method thereof |
| GB2489504A (en) * | 2011-03-31 | 2012-10-03 | Sapient Sensors | A device for identifying the presence of a specific target molecule or biomarker by sensing an electrical property |
| GB2523173A (en) * | 2014-02-17 | 2015-08-19 | Nokia Technologies Oy | An apparatus and associated methods |
| AU2015342795A1 (en) * | 2014-11-07 | 2017-06-01 | Proteosense | Devices, systems, and methods for the detection of analytes |
| EP3070464A1 (en) * | 2015-03-18 | 2016-09-21 | Nokia Technologies OY | An apparatus and associated methods |
| EP3657165A1 (en) * | 2018-11-23 | 2020-05-27 | Infineon Technologies AG | Method for providing calibration data for a gas sensor device, method of calibrating a gas sensor device, and processing device for a gas sensor device |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4020830A (en) * | 1975-03-12 | 1977-05-03 | The University Of Utah | Selective chemical sensitive FET transducers |
| US4238757A (en) * | 1976-03-19 | 1980-12-09 | General Electric Company | Field effect transistor for detection of biological reactions |
| US4180771A (en) * | 1977-12-02 | 1979-12-25 | Airco, Inc. | Chemical-sensitive field-effect transistor |
| GB2096825A (en) * | 1981-04-09 | 1982-10-20 | Sibbald Alastair | Chemical sensitive semiconductor field effect transducer |
| GB2096824A (en) * | 1981-04-09 | 1982-10-20 | Sibbald Alastair | Chemically sensitive field effect transistor |
| US4411741A (en) * | 1982-01-12 | 1983-10-25 | University Of Utah | Apparatus and method for measuring the concentration of components in fluids |
| US5500188A (en) * | 1984-03-01 | 1996-03-19 | Molecular Devices Corporation | Device for photoresponsive detection and discrimination |
| JPS60242354A (ja) * | 1984-05-16 | 1985-12-02 | Sharp Corp | Ｆｅｔ型センサ |
| DE229810T1 (de) * | 1985-07-09 | 1987-11-05 | Quadrant Bioresources Ltd., Soulbury, Leighton Buzzard, Bedfordshire | Beschuetzung von proteinen und aehnlichem. |
| US4709987A (en) * | 1985-12-10 | 1987-12-01 | The United States Of America As Represented By The Secretary Of The Navy | Pressure and temperature insensitive glass and optical coatings and fibers therefrom |
| US4728591A (en) * | 1986-03-07 | 1988-03-01 | Trustees Of Boston University | Self-assembled nanometer lithographic masks and templates and method for parallel fabrication of nanometer scale multi-device structures |
| JPS6350745A (ja) * | 1986-08-20 | 1988-03-03 | Fuji Photo Film Co Ltd | 化学センサ− |
| CA1318353C (en) * | 1987-05-05 | 1993-05-25 | Peter Wing-Poon Cheung | System employing a biosensor to monitor a characteristic of a select component in a medium |
| US4994560A (en) * | 1987-06-24 | 1991-02-19 | The Dow Chemical Company | Functionalized polyamine chelants and radioactive rhodium complexes thereof for conjugation to antibodies |
| US5165005A (en) * | 1988-01-29 | 1992-11-17 | Fiberchem Inc. | Planar and other waveguide refractive index sensors using metal cladding |
| KR0157220B1 (ko) * | 1988-02-08 | 1999-03-30 | 리이드 알. 프리오어 | 금속 산화물 전극 |
| EP0332935A1 (de) * | 1988-03-14 | 1989-09-20 | Siemens Aktiengesellschaft | Sensomaterial zur Messung des Partialdruckes von Gasen oder Dämpfen und Gassensor |
| DE3915554A1 (de) * | 1988-05-13 | 1989-11-16 | Eg & G Inc | Membran-biosensor |
| ATE136119T1 (de) * | 1988-08-18 | 1996-04-15 | Au Membrane & Biotech Res Inst | Verbesserungen an der empfindlichkeit und der selektivität von ionenkanalmembranbiosensoren |
| US5380490A (en) * | 1991-01-18 | 1995-01-10 | Canon Kabushiki Kaisha | Apparatus for measuring a test specimen |
| FR2672158B1 (fr) * | 1991-01-24 | 1993-04-09 | Commissariat Energie Atomique | Capteur pour la detection d'especes chimiques ou de photons utilisant un transistor a effet de champ. |
| JPH05282717A (ja) * | 1992-03-31 | 1993-10-29 | Canon Inc | 記録媒体の製造方法、及び記録媒体、及び情報処理装置 |
| US5331658A (en) * | 1992-08-26 | 1994-07-19 | Motorola, Inc. | Vertical cavity surface emitting laser and sensor |
| TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| US5563900A (en) * | 1994-08-09 | 1996-10-08 | Motorola | Broad spectrum surface-emitting led |
| US5489988A (en) * | 1995-01-03 | 1996-02-06 | Motorola | Environmental sensor and method therefor |
| US5567301A (en) * | 1995-03-01 | 1996-10-22 | Illinois Institute Of Technology | Antibody covalently bound film immunobiosensor |
-
1995
- 1995-06-28 US US08/496,269 patent/US5719033A/en not_active Expired - Fee Related
-
1996
- 1996-04-18 TW TW085104638A patent/TW297952B/zh active
- 1996-06-19 KR KR1019960022197A patent/KR970003739A/ko not_active Withdrawn
- 1996-06-20 EP EP96109961A patent/EP0751392A3/en not_active Withdrawn
- 1996-06-25 CN CN96108769A patent/CN1119652C/zh not_active Expired - Fee Related
- 1996-06-26 JP JP8184231A patent/JPH0915198A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0751392A3 (en) | 1997-11-19 |
| CN1156818A (zh) | 1997-08-13 |
| KR970003739A (ko) | 1997-01-28 |
| JPH0915198A (ja) | 1997-01-17 |
| US5719033A (en) | 1998-02-17 |
| EP0751392A2 (en) | 1997-01-02 |
| CN1119652C (zh) | 2003-08-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW297952B (enExample) | ||
| TW396551B (en) | Ferroelectric ram device and manufacturing method thereof | |
| US4636827A (en) | Semiconductor device responsive to ions | |
| TW575776B (en) | Thin film transistor array panel used for a liquid crystal display and a manufacturing method thereof | |
| JP2000206896A5 (enExample) | ||
| JP2008171871A5 (enExample) | ||
| CN102027357A (zh) | 传感器及其制造方法 | |
| TW297159B (enExample) | ||
| JPH1140841A5 (ja) | 光センサ、リニアイメージセンサ及びエリアセンサ | |
| JP4087125B2 (ja) | 凹凸パターン検出素子 | |
| WO2000051180A1 (en) | Silicon-on-insulator sensor having silicon oxide sensing surface, and manufacturing method therefor | |
| CN102047461A (zh) | 使用天然、合成或混合纤维素材料同时作为可自支持场效应电子和光电子器件中的物理和电介质支撑体的工艺 | |
| KR20050015581A (ko) | 오프셋을 가지는 박막트랜지스터형 광센서로 이루어진이미지 센서 및 그 제조방법. | |
| JP2001127174A5 (enExample) | ||
| CN100474631C (zh) | 垂直二极管、矩阵位置敏感装置及其制造方法 | |
| TWI245957B (en) | Active matrix display device | |
| TW211081B (enExample) | ||
| JP2850332B2 (ja) | 薄膜トランジスタ | |
| JPS58106861A (ja) | 液晶表示装置の製造方法 | |
| JPS6258550B2 (enExample) | ||
| JPH0697694B2 (ja) | 相補型薄膜トランジスタ | |
| JPH0487376A (ja) | 圧力センサ | |
| JP5527139B2 (ja) | バイオセンサを用いる測定方法およびバイオセンサ | |
| JPH04501937A (ja) | 電界効果トランジスタ及び半導体素子の製造方法 | |
| TW416057B (en) | Memory-cell device and its production method |