TW288158B - - Google Patents
Info
- Publication number
- TW288158B TW288158B TW085101515A TW85101515A TW288158B TW 288158 B TW288158 B TW 288158B TW 085101515 A TW085101515 A TW 085101515A TW 85101515 A TW85101515 A TW 85101515A TW 288158 B TW288158 B TW 288158B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950002915A KR0161389B1 (ko) | 1995-02-16 | 1995-02-16 | 마스크 및 이를 사용한 패턴형성방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW288158B true TW288158B (zh) | 1996-10-11 |
Family
ID=19408231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085101515A TW288158B (zh) | 1995-02-16 | 1996-02-07 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0731387A3 (zh) |
JP (1) | JPH08250446A (zh) |
KR (1) | KR0161389B1 (zh) |
TW (1) | TW288158B (zh) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
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US5858828A (en) * | 1997-02-18 | 1999-01-12 | Symbios, Inc. | Use of MEV implantation to form vertically modulated N+ buried layer in an NPN bipolar transistor |
KR19990057085A (ko) * | 1997-12-29 | 1999-07-15 | 구본준 | 반도체 소자의 웰 형성방법 |
KR20010025764A (ko) * | 1998-12-30 | 2001-04-06 | 박종섭 | 광투과율 조정레티클 및 그를 이용한 감광물질 현상방법 |
KR100548534B1 (ko) * | 1999-04-22 | 2006-02-02 | 주식회사 하이닉스반도체 | 셀 프로 젝션 마스크 |
US6534425B1 (en) | 1999-12-02 | 2003-03-18 | Seagate Technology Llc | Mask design and method for controlled profile fabrication |
JP4616439B2 (ja) * | 2000-02-10 | 2011-01-19 | 大日本印刷株式会社 | カラーフィルタの製造方法 |
WO2001067499A1 (en) * | 2000-03-08 | 2001-09-13 | Nanyang Technological University School Of Electrical & Electronic Engineering | Multiple bandgap photonic integration |
WO2001067569A1 (en) * | 2000-03-08 | 2001-09-13 | Nanyang Technological University | Plasma based process for photonic integration |
KR20020089386A (ko) * | 2000-03-08 | 2002-11-29 | 엔티유 벤처스 피티이 엘티디. | 양자 우물 혼정 |
WO2001071427A1 (en) * | 2000-03-20 | 2001-09-27 | Motorola Inc. | Photo-lithographic method for semiconductors |
US6420247B1 (en) | 2000-04-10 | 2002-07-16 | Motorola, Inc. | Method of forming structures on a semiconductor including doping profiles using thickness of photoresist |
JP4615682B2 (ja) * | 2000-08-07 | 2011-01-19 | セイコーインスツル株式会社 | Mos型トランジスタの製造方法 |
JP3556591B2 (ja) * | 2000-09-29 | 2004-08-18 | Hoya株式会社 | グレートーンマスクにおけるグレートーン部の欠陥修正方法 |
KR100498575B1 (ko) * | 2000-12-26 | 2005-07-01 | 호야 가부시키가이샤 | 그레이톤 마스크 |
JP4834235B2 (ja) * | 2001-03-12 | 2011-12-14 | 東芝モバイルディスプレイ株式会社 | グレートーン露光用フォトマスク |
JP2002287370A (ja) * | 2001-03-27 | 2002-10-03 | Mitsubishi Electric Corp | 光学素子の製造方法 |
KR100464204B1 (ko) * | 2001-06-08 | 2005-01-03 | 엘지.필립스 엘시디 주식회사 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
JP4743571B2 (ja) * | 2001-06-21 | 2011-08-10 | 大日本印刷株式会社 | カラーフィルタの作製方法およびカラーフィルタ |
DE10134462B4 (de) * | 2001-07-16 | 2004-07-01 | Infineon Technologies Ag | Verfahren zur Planarisierung der Oberfläche eines Halbleiterwafers und Vorrichtung zur Durchführung dieses Verfahrens |
KR100393230B1 (ko) * | 2001-08-16 | 2003-07-31 | 삼성전자주식회사 | 잔막율을 조절할 수 있는 포토레지스트 패턴의 형성방법 |
JP2003173015A (ja) * | 2001-09-28 | 2003-06-20 | Hoya Corp | グレートーンマスクの製造方法 |
JP4632103B2 (ja) * | 2001-10-01 | 2011-02-16 | セイコーエプソン株式会社 | フォトマスク |
JP4278944B2 (ja) * | 2002-09-24 | 2009-06-17 | 東芝松下ディスプレイテクノロジー株式会社 | 光センサ素子、これを用いた平面表示装置 |
US6828068B2 (en) * | 2003-01-23 | 2004-12-07 | Photronics, Inc. | Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same |
KR100574966B1 (ko) * | 2004-01-20 | 2006-05-02 | 삼성전자주식회사 | 포토마스크 및 이를 이용한 투과율 및 위상 조절 방법 |
WO2006038164A1 (en) * | 2004-10-08 | 2006-04-13 | Koninklijke Philips Electronics N.V. | Semiconductor device having substrate comprising layer with different thicknesses and method of manufacturing the same |
JP4641835B2 (ja) * | 2005-03-16 | 2011-03-02 | リコー光学株式会社 | 位相シフター光学素子の製造方法及び得られる素子 |
US8035103B2 (en) | 2005-08-11 | 2011-10-11 | Sharp Kabushiki Kaisha | Circuit board, electronic device, and method for producing circuit board |
JP4961990B2 (ja) * | 2005-12-14 | 2012-06-27 | 大日本印刷株式会社 | マスクブランクおよび階調マスク |
JP4826754B2 (ja) * | 2006-03-23 | 2011-11-30 | セイコーエプソン株式会社 | 固体撮像素子の製造方法及び固体撮像素子 |
KR100831675B1 (ko) * | 2006-05-09 | 2008-05-22 | 주식회사 하이닉스반도체 | 베스트 포커스를 설정하기 위한 포토 마스크 및 이를이용한 베스트 포커스 설정방법 |
JP5200439B2 (ja) * | 2006-07-21 | 2013-06-05 | 大日本印刷株式会社 | カラーフィルタの製造方法 |
KR100796609B1 (ko) * | 2006-08-17 | 2008-01-22 | 삼성에스디아이 주식회사 | Cmos 박막 트랜지스터의 제조방법 |
KR100818963B1 (ko) * | 2006-11-14 | 2008-04-04 | 삼성에스디아이 주식회사 | 하프 톤 포토마스크를 이용한 전계방출소자의 제조방법 |
JP4836258B2 (ja) * | 2006-11-20 | 2011-12-14 | 株式会社リコー | 半導体レーザアレイ製造方法、面発光型半導体レーザアレイ、光走査装置、画像形成装置、光伝送モジュール及び光伝送システム |
US20080182179A1 (en) * | 2007-01-25 | 2008-07-31 | Allied Integrated Patterning Corp. | Gray tone mask and method for manufacturing the same |
JP4935452B2 (ja) * | 2007-03-26 | 2012-05-23 | 凸版印刷株式会社 | グレーマスク及びグレーマスク用パターン製造方法 |
JP4930324B2 (ja) * | 2007-10-29 | 2012-05-16 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JP5178209B2 (ja) | 2008-01-16 | 2013-04-10 | 岩手東芝エレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5336226B2 (ja) * | 2008-02-26 | 2013-11-06 | Hoya株式会社 | 多階調フォトマスクの製造方法 |
KR101499232B1 (ko) * | 2008-04-10 | 2015-03-06 | 삼성디스플레이 주식회사 | 규소 결정화용 마스크 및 이를 이용한 다결정 규소 박막형성 방법과 박막 트랜지스터의 제조 방법 |
DE102009006885B4 (de) | 2009-01-30 | 2011-09-22 | Advanced Micro Devices, Inc. | Verfahren zum Erzeugen einer abgestuften Wannenimplantation für asymmetrische Transistoren mit kleinen Gateelektrodenabständen und Halbleiterbauelemente |
KR101095539B1 (ko) * | 2009-05-26 | 2011-12-19 | 엘지이노텍 주식회사 | 하프톤 마스크 및 이의 제조 방법 |
KR20100138381A (ko) * | 2009-06-25 | 2010-12-31 | 엘지이노텍 주식회사 | 하프톤 마스크의 제조 방법 |
JP2011159850A (ja) * | 2010-02-02 | 2011-08-18 | Toshiba Corp | テンプレート、テンプレートの製造方法およびパターン形成方法 |
JP2011197553A (ja) | 2010-03-23 | 2011-10-06 | Toshiba Corp | 露光用マスク、不純物層を有する半導体装置の製造方法および固体撮像装置 |
JP2012069574A (ja) | 2010-09-21 | 2012-04-05 | Toshiba Corp | 不純物層の形成方法、露光用マスクおよび固体撮像装置の製造方法 |
SG189460A1 (en) * | 2010-10-28 | 2013-05-31 | Univ Singapore | Lithography method and apparatus |
JP2012160544A (ja) * | 2011-01-31 | 2012-08-23 | Toyota Motor Corp | 炭化珪素半導体装置の製造方法 |
JP6004635B2 (ja) * | 2011-02-01 | 2016-10-12 | キヤノン株式会社 | 半導体装置の製造方法 |
JP2013021014A (ja) * | 2011-07-07 | 2013-01-31 | Canon Inc | エネルギー線検出装置の製造方法 |
CN102881571B (zh) * | 2012-09-28 | 2014-11-26 | 京东方科技集团股份有限公司 | 有源层离子注入方法及薄膜晶体管有源层离子注入方法 |
JPWO2014203881A1 (ja) * | 2013-06-21 | 2017-02-23 | 富士電機株式会社 | 炭化珪素半導体素子の製造方法 |
CN103941481A (zh) * | 2013-06-27 | 2014-07-23 | 上海中航光电子有限公司 | 一种掩模板的设计 |
SG10201807071TA (en) | 2014-03-13 | 2018-09-27 | Nat Univ Singapore | An optical interference device |
KR20150138687A (ko) * | 2014-06-02 | 2015-12-10 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 이온주입용 멀티패턴마스크 및 이를 이용한 이온주입방법 |
US9512517B2 (en) * | 2015-01-23 | 2016-12-06 | Varian Semiconductor Equipment Associates, Inc. | Multiple exposure treatment for processing a patterning feature |
US9754791B2 (en) | 2015-02-07 | 2017-09-05 | Applied Materials, Inc. | Selective deposition utilizing masks and directional plasma treatment |
WO2018067500A1 (en) | 2016-10-05 | 2018-04-12 | Magic Leap, Inc. | Fabricating non-uniform diffraction gratings |
JP2019159003A (ja) * | 2018-03-09 | 2019-09-19 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置の製造方法 |
DE102018114664A1 (de) * | 2018-06-19 | 2019-12-19 | Infineon Technologies Ag | Halbleitervorrichtung, Retikel und Verfahren zum Herstellen einer Halbleitervorrichtung |
CN110164944A (zh) * | 2019-06-03 | 2019-08-23 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、掩膜版、显示装置 |
JP6993530B1 (ja) * | 2020-12-25 | 2022-01-13 | 株式会社エスケーエレクトロニクス | フォトマスク、フォトマスクの製造方法、表示装置の製造方法 |
FR3127628A1 (fr) * | 2021-09-24 | 2023-03-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication d’un moule pour nano-impression et moule associé |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4231811A (en) * | 1979-09-13 | 1980-11-04 | Intel Corporation | Variable thickness self-aligned photoresist process |
JPS57121226A (en) * | 1981-01-21 | 1982-07-28 | Hitachi Ltd | Photo mask |
DE3402653A1 (de) * | 1984-01-26 | 1985-08-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung speziell dotierter bereiche in halbleitermaterial |
DE4020076A1 (de) * | 1990-06-23 | 1992-01-09 | El Mos Elektronik In Mos Techn | Verfahren zur herstellung eines pmos-transistors sowie pmos-transistor |
-
1995
- 1995-02-16 KR KR1019950002915A patent/KR0161389B1/ko not_active IP Right Cessation
-
1996
- 1996-02-07 TW TW085101515A patent/TW288158B/zh active
- 1996-02-13 JP JP2493296A patent/JPH08250446A/ja active Pending
- 1996-02-16 EP EP96301076A patent/EP0731387A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0731387A2 (en) | 1996-09-11 |
KR0161389B1 (ko) | 1999-01-15 |
EP0731387A3 (en) | 1996-11-27 |
JPH08250446A (ja) | 1996-09-27 |
KR960032085A (ko) | 1996-09-17 |