TW271501B - Three-dimensional sram trench structure and fabrication method therefor - Google Patents

Three-dimensional sram trench structure and fabrication method therefor

Info

Publication number
TW271501B
TW271501B TW084108334A TW84108334A TW271501B TW 271501 B TW271501 B TW 271501B TW 084108334 A TW084108334 A TW 084108334A TW 84108334 A TW84108334 A TW 84108334A TW 271501 B TW271501 B TW 271501B
Authority
TW
Taiwan
Prior art keywords
trench structure
trench
sram
fets
method therefor
Prior art date
Application number
TW084108334A
Other languages
English (en)
Inventor
Edward Beilstein Kenneth Jr
Louis Bertin Claude
Edward Cronin John
Roger White Francis
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW271501B publication Critical patent/TW271501B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW084108334A 1995-02-08 1995-08-10 Three-dimensional sram trench structure and fabrication method therefor TW271501B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/386,721 US5670803A (en) 1995-02-08 1995-02-08 Three-dimensional SRAM trench structure and fabrication method therefor

Publications (1)

Publication Number Publication Date
TW271501B true TW271501B (en) 1996-03-01

Family

ID=23526767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084108334A TW271501B (en) 1995-02-08 1995-08-10 Three-dimensional sram trench structure and fabrication method therefor

Country Status (4)

Country Link
US (2) US5670803A (zh)
JP (1) JP3229188B2 (zh)
KR (1) KR100188623B1 (zh)
TW (1) TW271501B (zh)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5963800A (en) * 1995-06-16 1999-10-05 Interuniversitair Micro-Elektronica Centrum (Imec Vzw) CMOS integration process having vertical channel
US5920088A (en) 1995-06-16 1999-07-06 Interuniversitair Micro-Electronica Centrum (Imec Vzw) Vertical MISFET devices
DE19603810C1 (de) * 1996-02-02 1997-08-28 Siemens Ag Speicherzellenanordnung und Verfahren zu deren Herstellung
TW424326B (en) * 1997-11-27 2001-03-01 Siemens Ag SRAM-cells arrangement and its production method
DE19821901C2 (de) 1998-05-15 2002-05-08 Infineon Technologies Ag Integrierte elektrische Schaltung mit wenigstens einer vertikalen SRAM-Speicherzelle und Verfahren zu ihrer Herstellung
US6459123B1 (en) * 1999-04-30 2002-10-01 Infineon Technologies Richmond, Lp Double gated transistor
US6472767B1 (en) * 1999-04-30 2002-10-29 Infineon Technologies Ag Static random access memory (SRAM)
US6683345B1 (en) * 1999-12-20 2004-01-27 International Business Machines, Corp. Semiconductor device and method for making the device having an electrically modulated conduction channel
DE10016444C2 (de) * 2000-03-29 2002-01-24 Infineon Technologies Ag Integrierte dreidimensionale Graben-SRAM-Speicherzelle
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6406962B1 (en) * 2001-01-17 2002-06-18 International Business Machines Corporation Vertical trench-formed dual-gate FET device structure and method for creation
US6440800B1 (en) * 2001-01-26 2002-08-27 Chartered Semiconductor Manufacturing Ltd. Method to form a vertical transistor by selective epitaxial growth and delta doped silicon layers
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6437401B1 (en) * 2001-04-03 2002-08-20 Infineon Technologies Ag Structure and method for improved isolation in trench storage cells
US7132701B1 (en) 2001-07-27 2006-11-07 Fairchild Semiconductor Corporation Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
JP2003068883A (ja) * 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US7244977B2 (en) * 2001-10-24 2007-07-17 Elpida Memory, Inc. Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
JP4219663B2 (ja) * 2002-11-29 2009-02-04 株式会社ルネサステクノロジ 半導体記憶装置及び半導体集積回路
JP2004221242A (ja) * 2003-01-14 2004-08-05 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7170726B2 (en) * 2003-01-16 2007-01-30 Silicon Integrated Systems Corp. Uniform turn-on design on multiple-finger MOSFET for ESD protection application
JP2004253730A (ja) * 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US9287356B2 (en) * 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
DE112006000832B4 (de) 2005-04-06 2018-09-27 Fairchild Semiconductor Corporation Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben
US8183665B2 (en) * 2005-11-15 2012-05-22 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8513768B2 (en) * 2005-05-09 2013-08-20 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9911743B2 (en) * 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8217490B2 (en) * 2005-05-09 2012-07-10 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
TWI300975B (en) * 2006-06-08 2008-09-11 Nanya Technology Corp Method for fabricating recessed-gate mos transistor device
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP5410974B2 (ja) 2006-08-08 2014-02-05 ナンテロ，インク． 不揮発性ナノチューブダイオード及び不揮発性ナノチューブブロック、並びにそれらを用いるシステム及びその製造方法
US8928077B2 (en) 2007-09-21 2015-01-06 Fairchild Semiconductor Corporation Superjunction structures for power devices
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
KR100922557B1 (ko) * 2007-12-27 2009-10-21 주식회사 동부하이텍 Ｃｍｏｓ 트랜지스터 및 그 제조 방법
JP5623005B2 (ja) * 2008-02-01 2014-11-12 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
WO2009128337A1 (ja) 2008-04-16 2009-10-22 日本電気株式会社 半導体装置およびその製造方法
US8692317B2 (en) 2008-04-16 2014-04-08 Nec Corporation Semiconductor storage device
US8120072B2 (en) * 2008-07-24 2012-02-21 Micron Technology, Inc. JFET devices with increased barrier height and methods of making same
US8232585B2 (en) 2008-07-24 2012-07-31 Micron Technology, Inc. JFET devices with PIN gate stacks
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8481372B2 (en) 2008-12-11 2013-07-09 Micron Technology, Inc. JFET device structures and methods for fabricating the same
US8278691B2 (en) 2008-12-11 2012-10-02 Micron Technology, Inc. Low power memory device with JFET device structures
US8072027B2 (en) * 2009-06-08 2011-12-06 Fairchild Semiconductor Corporation 3D channel architecture for semiconductor devices
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
CN102332299A (zh) * 2011-07-28 2012-01-25 上海宏力半导体制造有限公司 Sram单元
KR101802436B1 (ko) * 2011-12-07 2017-11-29 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP5692884B1 (ja) * 2014-08-19 2015-04-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． Ｓｇｔを有する半導体装置の製造方法
US9484349B1 (en) 2015-10-28 2016-11-01 Powerchip Technology Corporation Static random access memory
US11043496B2 (en) * 2018-12-18 2021-06-22 Micron Technology, Inc. Thin film transistors and related fabrication techniques
CN113257815B (zh) * 2021-04-29 2023-01-10 中国科学院微电子研究所 竖直相邻器件之间带隔离部的半导体装置及电子设备

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293053A (en) 1979-12-18 1981-10-06 United Technologies Corporation Sound absorbing structure
US4364074A (en) * 1980-06-12 1982-12-14 International Business Machines Corporation V-MOS Device with self-aligned multiple electrodes
JPS60134461A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体記憶装置
JPS60239052A (ja) * 1984-05-14 1985-11-27 Hitachi Ltd 半導体集積回路装置
US4740826A (en) * 1985-09-25 1988-04-26 Texas Instruments Incorporated Vertical inverter
US5089862A (en) * 1986-05-12 1992-02-18 Warner Jr Raymond M Monocrystalline three-dimensional integrated circuit
US4821235A (en) * 1986-04-17 1989-04-11 Fairchild Semiconductor Corporation Translinear static memory cell with bipolar and MOS devices
JPS63239973A (ja) * 1986-10-08 1988-10-05 テキサス　インスツルメンツ　インコーポレイテツド 集積回路およびその製造方法
JPS63221665A (ja) * 1987-03-10 1988-09-14 Mitsubishi Electric Corp 半導体記憶装置
JPH0687500B2 (ja) * 1987-03-26 1994-11-02 日本電気株式会社 半導体記憶装置およびその製造方法
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
US4794561A (en) * 1987-07-02 1988-12-27 Integrated Device Technology, Inc. Static ram cell with trench pull-down transistors and buried-layer ground plate
US4997783A (en) * 1987-07-02 1991-03-05 Integrated Device Technology, Inc. Static ram cell with trench pull-down transistors and buried-layer ground plate
US4987090A (en) * 1987-07-02 1991-01-22 Integrated Device Technology, Inc. Static ram cell with trench pull-down transistors and buried-layer ground plate
JP2735193B2 (ja) * 1987-08-25 1998-04-02 株式会社東芝 不揮発性半導体装置及びその製造方法
JPH0750747B2 (ja) 1987-09-01 1995-05-31 日本電気株式会社 半導体記憶装置
JPH01265558A (ja) * 1988-04-15 1989-10-23 Sony Corp 半導体メモリ
JPH0770623B2 (ja) * 1988-07-08 1995-07-31 三菱電機株式会社 スタティックランダムアクセスメモリ装置
US5016070A (en) * 1989-06-30 1991-05-14 Texas Instruments Incorporated Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors
JPH0513714A (ja) * 1990-01-25 1993-01-22 Texas Instr Inc <Ti> 溝型トランジスタ使用の双安定論理デバイス
US5122848A (en) * 1991-04-08 1992-06-16 Micron Technology, Inc. Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance
US5096849A (en) * 1991-04-29 1992-03-17 International Business Machines Corporation Process for positioning a mask within a concave semiconductor structure
US5055898A (en) * 1991-04-30 1991-10-08 International Business Machines Corporation DRAM memory cell having a horizontal SOI transfer device disposed over a buried storage node and fabrication methods therefor
KR920022532A (ko) * 1991-05-13 1992-12-19 문정환 이중 수직 채널을 갖는 스태틱램 및 그 제조방법
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
US5285093A (en) * 1992-10-05 1994-02-08 Motorola, Inc. Semiconductor memory cell having a trench structure
US5324973A (en) * 1993-05-03 1994-06-28 Motorola Inc. Semiconductor SRAM with trench transistors
US5424231A (en) * 1994-08-09 1995-06-13 United Microelectronics Corp. Method for manufacturing a VDMOS transistor

Also Published As

Publication number Publication date
US6174763B1 (en) 2001-01-16
KR100188623B1 (ko) 1999-06-01
JP3229188B2 (ja) 2001-11-12
JPH08241931A (ja) 1996-09-17
US5670803A (en) 1997-09-23

Similar Documents

Publication Publication Date Title
TW271501B (en) Three-dimensional sram trench structure and fabrication method therefor
AU580450B2 (en) High density memory
KR840006873A (ko) 반도체 메모리
MX9710043A (es) Fabricacion de dispositivos semiconductores.
TW288203B (zh)
KR890702254A (ko) 집적회로 트랜치 셀
EP0029099A3 (en) Semiconductor memory device
JPS6435948A (en) Static ram cell equipped with trench structure pull-down transistor and buried layer grounding plate
EP0099175A3 (en) Split gate efet
KR900001394B1 (en) Super high frequency intergrated circuit device
ATE50885T1 (de) Verfahren zum herstellen von kreuzkopplungen zwischen n- und p-kanal-cmos-feldeffekttransistoren von statischen schreib-lesespeichern, insbesondere bei 6-transistorspeicherzellen-anordnungen.
DE2967441D1 (en) Method of producing field-effect transistors of the mos type with self-aligned gate and contact vias
CA2227011A1 (en) Short channel fermi-threshold field effect transistors
IE852964L (en) Trench transistor
KR910010722A (ko) 반도체기억장치
WO1999048100A3 (en) Semi-conductor device with a memory cell
EP0066429A3 (en) Semiconductor memory
EP0472726A4 (en) Field effect transistor
DE3687408D1 (de) Mehrstelliger carry-ripple-addierer in cmos-technik mit zwei typen von addiererzellen.
HK59796A (en) High density memory cell and process for manufacturing
EP0088912A3 (en) Subthreshold load element for static ram cell
EP0109853A3 (en) Semiconductor memory devices and methods for making the same
JPS5534393A (en) Semiconductor memory
JPS6411360A (en) Semiconductor memory device
JPS6459958A (en) Vertical field-effect transistor