TW218858B - - Google Patents

Info

Publication number
TW218858B
TW218858B TW080108285A TW80108285A TW218858B TW 218858 B TW218858 B TW 218858B TW 080108285 A TW080108285 A TW 080108285A TW 80108285 A TW80108285 A TW 80108285A TW 218858 B TW218858 B TW 218858B
Authority
TW
Taiwan
Application number
TW080108285A
Other languages
Chinese (zh)
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Application granted granted Critical
Publication of TW218858B publication Critical patent/TW218858B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/32—Post-polymerisation treatment
    • C08G77/36—Fractionation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
    • C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Ceramic Products (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Catalysts (AREA)
TW080108285A 1990-11-28 1991-10-21 TW218858B (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/618,865 US5063267A (en) 1990-11-28 1990-11-28 Hydrogen silsesquioxane resin fractions and their use as coating materials

Publications (1)

Publication Number Publication Date
TW218858B true TW218858B (OSRAM) 1994-01-11

Family

ID=24479445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080108285A TW218858B (OSRAM) 1990-11-28 1991-10-21

Country Status (8)

Country Link
US (1) US5063267A (OSRAM)
EP (1) EP0493879B1 (OSRAM)
JP (1) JPH04275337A (OSRAM)
KR (1) KR960007346B1 (OSRAM)
CA (1) CA2055306C (OSRAM)
DE (1) DE69100590T2 (OSRAM)
ES (1) ES2047987T3 (OSRAM)
TW (1) TW218858B (OSRAM)

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* Cited by examiner, † Cited by third party
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US5445894A (en) * 1991-04-22 1995-08-29 Dow Corning Corporation Ceramic coatings
US5436029A (en) * 1992-07-13 1995-07-25 Dow Corning Corporation Curing silicon hydride containing materials by exposure to nitrous oxide
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US5310583A (en) * 1992-11-02 1994-05-10 Dow Corning Corporation Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide
JP3153367B2 (ja) * 1992-11-24 2001-04-09 ダウ・コ−ニング・コ−ポレ−ション ポリハイドロジェンシルセスキオキサンの分子量分別方法
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5492958A (en) * 1993-03-08 1996-02-20 Dow Corning Corporation Metal containing ceramic coatings
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US5320868A (en) * 1993-09-13 1994-06-14 Dow Corning Corporation Method of forming SI-O containing coatings
US5441765A (en) * 1993-09-22 1995-08-15 Dow Corning Corporation Method of forming Si-O containing coatings
KR100361043B1 (ko) * 1993-12-27 2003-04-10 가와사키 마이크로 엘렉트로닉스 가부시키가이샤 반도체장치의절연막및절연막형성용도포액및절연막의제조방법
US5456952A (en) * 1994-05-17 1995-10-10 Lsi Logic Corporation Process of curing hydrogen silsesquioxane coating to form silicon oxide layer
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US5501875A (en) 1994-12-27 1996-03-26 Dow Corning Corporation Metal coated silica precursor powders
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US5635240A (en) * 1995-06-19 1997-06-03 Dow Corning Corporation Electronic coating materials using mixed polymers
US5985229A (en) * 1995-09-21 1999-11-16 Toagosei Co., Ltd. Solid silica derivative and process for producing the same
US5609925A (en) 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
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Also Published As

Publication number Publication date
CA2055306A1 (en) 1992-05-29
DE69100590D1 (de) 1993-12-09
EP0493879B1 (en) 1993-11-03
KR960007346B1 (ko) 1996-05-31
JPH0579693B2 (OSRAM) 1993-11-04
CA2055306C (en) 1996-06-18
JPH04275337A (ja) 1992-09-30
US5063267A (en) 1991-11-05
EP0493879A3 (en) 1992-09-30
KR920009891A (ko) 1992-06-25
EP0493879A2 (en) 1992-07-08
ES2047987T3 (es) 1994-03-01
DE69100590T2 (de) 1994-05-11

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