TW218858B - - Google Patents

Info

Publication number
TW218858B
TW218858B TW080108285A TW80108285A TW218858B TW 218858 B TW218858 B TW 218858B TW 080108285 A TW080108285 A TW 080108285A TW 80108285 A TW80108285 A TW 80108285A TW 218858 B TW218858 B TW 218858B
Authority
TW
Taiwan
Application number
TW080108285A
Original Assignee
Dow Corning
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning filed Critical Dow Corning
Application granted granted Critical
Publication of TW218858B publication Critical patent/TW218858B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/32—Post-polymerisation treatment
    • C08G77/36—Fractionation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
    • C04B41/4554—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction the coating or impregnating material being an organic or organo-metallic precursor of an inorganic material
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/481—Insulating layers on insulating parts, with or without metallisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Ceramic Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Ceramic Products (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Catalysts (AREA)
TW080108285A 1990-11-28 1991-10-21 TW218858B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/618,865 US5063267A (en) 1990-11-28 1990-11-28 Hydrogen silsesquioxane resin fractions and their use as coating materials

Publications (1)

Publication Number Publication Date
TW218858B true TW218858B (zh) 1994-01-11

Family

ID=24479445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW080108285A TW218858B (zh) 1990-11-28 1991-10-21

Country Status (8)

Country Link
US (1) US5063267A (zh)
EP (1) EP0493879B1 (zh)
JP (1) JPH04275337A (zh)
KR (1) KR960007346B1 (zh)
CA (1) CA2055306C (zh)
DE (1) DE69100590T2 (zh)
ES (1) ES2047987T3 (zh)
TW (1) TW218858B (zh)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
JP2844896B2 (ja) * 1990-10-17 1999-01-13 信越化学工業株式会社 耐熱性絶縁塗料
US5445894A (en) * 1991-04-22 1995-08-29 Dow Corning Corporation Ceramic coatings
US5436029A (en) * 1992-07-13 1995-07-25 Dow Corning Corporation Curing silicon hydride containing materials by exposure to nitrous oxide
CA2100277A1 (en) * 1992-07-20 1994-01-21 Loren Andrew Haluska Sealing porous electronic substrates
US5310583A (en) * 1992-11-02 1994-05-10 Dow Corning Corporation Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide
JP3153367B2 (ja) * 1992-11-24 2001-04-09 ダウ・コ−ニング・コ−ポレ−ション ポリハイドロジェンシルセスキオキサンの分子量分別方法
US5387480A (en) * 1993-03-08 1995-02-07 Dow Corning Corporation High dielectric constant coatings
US5492958A (en) * 1993-03-08 1996-02-20 Dow Corning Corporation Metal containing ceramic coatings
TW492989B (en) * 1993-03-19 2002-07-01 Dow Corning Stabilization of hydrogen silsesquioxane resin solutions
US5320868A (en) * 1993-09-13 1994-06-14 Dow Corning Corporation Method of forming SI-O containing coatings
US5441765A (en) * 1993-09-22 1995-08-15 Dow Corning Corporation Method of forming Si-O containing coatings
US6423651B1 (en) * 1993-12-27 2002-07-23 Kawasaki Steel Corporation Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film
US5456952A (en) * 1994-05-17 1995-10-10 Lsi Logic Corporation Process of curing hydrogen silsesquioxane coating to form silicon oxide layer
MX9504934A (es) * 1994-12-12 1997-01-31 Morton Int Inc Revestimientos en polvo de pelicula delgada lisa.
US5501875A (en) 1994-12-27 1996-03-26 Dow Corning Corporation Metal coated silica precursor powders
JPH08245792A (ja) * 1995-03-10 1996-09-24 Mitsubishi Electric Corp シリコーンラダーポリマー、シリコーンラダープレポリマーおよびそれらの製造方法
US5618878A (en) * 1995-04-07 1997-04-08 Dow Corning Corporation Hydrogen silsesquioxane resin coating composition
US5635240A (en) * 1995-06-19 1997-06-03 Dow Corning Corporation Electronic coating materials using mixed polymers
US5985229A (en) * 1995-09-21 1999-11-16 Toagosei Co., Ltd. Solid silica derivative and process for producing the same
US5609925A (en) 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US6583187B1 (en) 1996-07-19 2003-06-24 Andrew T. Daly Continuous processing of powder coating compositions
US6075074A (en) 1996-07-19 2000-06-13 Morton International, Inc. Continuous processing of powder coating compositions
US6114414A (en) * 1996-07-19 2000-09-05 Morton International, Inc. Continuous processing of powder coating compositions
US5766522A (en) * 1996-07-19 1998-06-16 Morton International, Inc. Continuous processing of powder coating compositions
US5711987A (en) * 1996-10-04 1998-01-27 Dow Corning Corporation Electronic coatings
US5776235A (en) * 1996-10-04 1998-07-07 Dow Corning Corporation Thick opaque ceramic coatings
US5807611A (en) * 1996-10-04 1998-09-15 Dow Corning Corporation Electronic coatings
US20100273011A1 (en) * 1996-12-20 2010-10-28 Bianxiao Zhong Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates
DE19654488A1 (de) * 1996-12-27 1998-07-02 Sueddeutsche Kalkstickstoff Verfahren zur Fraktionierung viscoser Silicone
US5707681A (en) * 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
EP0860462A3 (en) * 1997-02-24 1999-04-21 Dow Corning Toray Silicone Company Limited Composition and method for the formation of silica thin films
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6043330A (en) * 1997-04-21 2000-03-28 Alliedsignal Inc. Synthesis of siloxane resins
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
TW392288B (en) 1997-06-06 2000-06-01 Dow Corning Thermally stable dielectric coatings
US5866197A (en) * 1997-06-06 1999-02-02 Dow Corning Corporation Method for producing thick crack-free coating from hydrogen silsequioxane resin
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
US6340722B1 (en) 1998-09-04 2002-01-22 The University Of Akron Polymerization, compatibilized blending, and particle size control of powder coatings in a supercritical fluid
DE19848474C1 (de) * 1998-10-21 2000-01-13 Bosch Gmbh Robert Verfahren und Vorrichtung zur Herstellung keramischer Formkörper mittels Setterplatten und Verendung des Verfahrens zur Herstellung keramischer Mehrschichthybride
WO2000077575A1 (en) * 1999-06-10 2000-12-21 Alliedsignal Inc. Spin-on-glass anti-reflective coatings for photolithography
US6440550B1 (en) 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6572974B1 (en) 1999-12-06 2003-06-03 The Regents Of The University Of Michigan Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
US6143360A (en) * 1999-12-13 2000-11-07 Dow Corning Corporation Method for making nanoporous silicone resins from alkylydridosiloxane resins
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US7011868B2 (en) * 2000-03-20 2006-03-14 Axcelis Technologies, Inc. Fluorine-free plasma curing process for porous low-k materials
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6913796B2 (en) * 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6368400B1 (en) * 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
JP2001131479A (ja) * 2000-10-30 2001-05-15 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用塗布液
USH2219H1 (en) * 2000-10-31 2008-07-01 The United States Of America As Represented By The Secretary Of The Navy Method for coating small particles
US6399210B1 (en) 2000-11-27 2002-06-04 Dow Corning Corporation Alkoxyhydridosiloxane resins
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
FR2830856B1 (fr) * 2001-10-15 2004-07-30 Pechiney Aluminium Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire
FR2830857B1 (fr) * 2001-10-15 2004-07-30 Pechiney Aluminium Precurseur de revetement et procede pour revetir un substrat d'une couche refractaire
US6596821B1 (en) * 2002-03-05 2003-07-22 Dow Corning Corporation Hydrosilyation cured silicone resins obtained by fractionation
US20070111014A1 (en) * 2003-08-01 2007-05-17 Dow Corning Corporation Silicone based dielectric coatings and films for photovoltaic applications
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
KR100534103B1 (ko) * 2004-01-14 2005-12-06 삼성전자주식회사 초임계 유체를 이용한 미세 전자소자의 제조 방법
WO2006033775A1 (en) 2004-09-17 2006-03-30 Dow Corning Corporation Siloxane composition, agglomerate, and method of preparing agglomerate
CN101048704B (zh) * 2004-11-02 2011-04-13 陶氏康宁公司 抗蚀剂组合物
JP4783117B2 (ja) * 2005-10-21 2011-09-28 東レ・ダウコーニング株式会社 シリカ系ガラス薄層付き無機質基板、その製造方法、コーテイング剤および半導体装置
JP5085649B2 (ja) 2006-06-28 2012-11-28 ダウ コーニング コーポレーション 電子吸引基を有する塩基性添加剤を含有するシルセスキオキサン樹脂システム
KR101293937B1 (ko) * 2006-06-28 2013-08-09 다우 코닝 코포레이션 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템
CN101501139B (zh) 2006-08-04 2011-08-17 陶氏康宁公司 硅氧烷树脂和硅氧烷组合物
US8277945B2 (en) * 2006-12-20 2012-10-02 Dow Corning Corporation Glass substrates coated or laminated with multiple layers of cured silicone resin compositions
EP2125652A1 (en) * 2006-12-20 2009-12-02 Dow Corning Corporation Glass substrates coated or laminated with cured silicone resin compositions
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
WO2009111193A1 (en) * 2008-03-04 2009-09-11 Dow Corning Corporation Borosiloxane composition, borosiloxane adhesive, coated and laminated substrates
JP5331825B2 (ja) * 2008-03-04 2013-10-30 ダウ・コーニング・コーポレイション シリコーン組成物、シリコーン接着剤、塗装基板及び積層基板
KR20110013509A (ko) * 2008-05-27 2011-02-09 다우 코닝 코포레이션 접착 테이프 및 접합 유리
TW201004795A (en) * 2008-07-31 2010-02-01 Dow Corning Laminated glass
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US9012547B2 (en) 2010-11-09 2015-04-21 Dow Corning Corporation Hydrosilylation cured silicone resins plasticized by organophosphorous compounds
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP6117211B2 (ja) 2011-09-20 2017-04-19 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ ルテニウム含有ヒドロシリル化触媒及びこの触媒を含有する組成物
WO2013043785A2 (en) 2011-09-20 2013-03-28 Dow Corning Corporation Nickel containing hydrosilylation catalysts and compositions containing the catalysts
WO2014021908A1 (en) 2011-09-20 2014-02-06 Dow Corning Corporation Iridium containing hydrosilylation catalysts and compositions containing the catalysts
CN103958059B (zh) 2011-12-01 2017-04-26 道康宁公司 硅氢加成反应催化剂和可固化组合物及它们的制备和使用方法
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
JP6557248B2 (ja) 2014-04-09 2019-08-07 ダウ シリコーンズ コーポレーション 疎水性物品
US10473822B2 (en) 2014-04-09 2019-11-12 Dow Silicones Corporation Optical element
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR102567687B1 (ko) * 2015-06-17 2023-08-18 주식회사 다이셀 경화성 조성물
CN108779366B (zh) 2016-02-19 2020-09-22 美国陶氏有机硅公司 老化的聚合物型倍半硅氧烷

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615272A (en) * 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
JPS5710627A (en) * 1980-06-24 1982-01-20 Hitachi Chem Co Ltd Preparation of polysiloxane with fractionated molecular weight
JP2513595B2 (ja) * 1984-11-28 1996-07-03 富士通株式会社 ラダ−型シリコン樹脂の分子量分別法
US4723978A (en) * 1985-10-31 1988-02-09 International Business Machines Corporation Method for a plasma-treated polysiloxane coating
EP0255226A3 (en) * 1986-06-26 1990-07-11 Minnesota Mining And Manufacturing Company Silicone pressure-sensitive adhesive having improved properties
EP0255303B1 (en) * 1986-07-25 1989-10-11 Oki Electric Industry Company, Limited Negative resist material, method for its manufacture and method for using it
US4756977A (en) * 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JPH01203013A (ja) * 1988-02-08 1989-08-15 Fujitsu Ltd 高分子化合物の分子量分別方法
US4999397A (en) * 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5010159A (en) * 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol

Also Published As

Publication number Publication date
KR960007346B1 (ko) 1996-05-31
JPH0579693B2 (zh) 1993-11-04
KR920009891A (ko) 1992-06-25
EP0493879A2 (en) 1992-07-08
EP0493879A3 (en) 1992-09-30
US5063267A (en) 1991-11-05
CA2055306C (en) 1996-06-18
CA2055306A1 (en) 1992-05-29
ES2047987T3 (es) 1994-03-01
DE69100590D1 (de) 1993-12-09
EP0493879B1 (en) 1993-11-03
JPH04275337A (ja) 1992-09-30
DE69100590T2 (de) 1994-05-11

Similar Documents

Publication Publication Date Title
TW218858B (zh)
FR2659180B1 (zh)
TW217421B (zh)
DE4190037T (zh)
DE4192351T (zh)
FR2669136B1 (zh)
DE4190241T (zh)
FR2657420B1 (zh)
FR2659072B1 (zh)
ATA127191A (zh)
DE4092603T (zh)
FR2666040B1 (zh)
DE4190411T1 (zh)
FR2660748B1 (zh)
IN170598B (zh)
DK285090D0 (zh)
IN174667B (zh)
ECSM90422U (zh)
IN176639B (zh)
ECSM90455U (zh)
ECSM90414U (zh)
JPH0493328U (zh)
IN173788B (zh)
IN173608B (zh)
ECSM90402U (zh)

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent