TW208757B - - Google Patents
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- Publication number
- TW208757B TW208757B TW081101268A TW81101268A TW208757B TW 208757 B TW208757 B TW 208757B TW 081101268 A TW081101268 A TW 081101268A TW 81101268 A TW81101268 A TW 81101268A TW 208757 B TW208757 B TW 208757B
- Authority
- TW
- Taiwan
- Prior art keywords
- electron beam
- crystal
- optical
- alignment
- ebl
- Prior art date
Links
- 239000013078 crystal Substances 0.000 claims description 59
- 238000010894 electron beam technology Methods 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 37
- 238000012937 correction Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 3
- 238000000609 electron-beam lithography Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 4
- 241000208140 Acer Species 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 235000004263 Ocotea pretiosa Nutrition 0.000 description 1
- 244000009660 Sassafras variifolium Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 210000003625 skull Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/30438—Registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR920000208 | 1992-01-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW208757B true TW208757B (xx) | 1993-07-01 |
Family
ID=19327690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081101268A TW208757B (xx) | 1992-01-09 | 1992-02-20 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH05259046A (xx) |
| GB (1) | GB2263335A (xx) |
| IT (1) | IT1254518B (xx) |
| TW (1) | TW208757B (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122758A (zh) * | 2013-04-26 | 2014-10-29 | 佳能株式会社 | 绘画装置和物品的制造方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3141732B2 (ja) * | 1995-07-05 | 2001-03-05 | 株式会社日立製作所 | 荷電粒子線装置 |
| JP2000114137A (ja) * | 1998-09-30 | 2000-04-21 | Advantest Corp | 電子ビーム露光装置及びアライメント方法 |
| FR2792065B1 (fr) * | 1999-04-09 | 2001-07-13 | Centre Nat Etd Spatiales | Installation et procede d'observation de deux specimens identiques |
| DE102019128860A1 (de) * | 2019-10-25 | 2020-11-26 | Carl Zeiss Smt Gmbh | Verfahren zur Vermessung einer Struktur und Substrat für die Halbleiterlithographie |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1291575A (en) * | 1969-07-03 | 1972-10-04 | Texas Instruments Ltd | Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby |
| DE2702448C2 (de) * | 1977-01-20 | 1982-12-16 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Positionierung eines mit einer Marke versehenen Werkstückes relativ zu einem Abtastfeld bzw. zu einer Maske |
| US4385838A (en) * | 1980-01-19 | 1983-05-31 | Nippon Kogaku K. K. | Alignment device |
-
1992
- 1992-02-20 TW TW081101268A patent/TW208757B/zh active
- 1992-03-04 GB GB9204703A patent/GB2263335A/en not_active Withdrawn
- 1992-03-06 IT ITMI920530A patent/IT1254518B/it active
- 1992-03-19 JP JP4064085A patent/JPH05259046A/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104122758A (zh) * | 2013-04-26 | 2014-10-29 | 佳能株式会社 | 绘画装置和物品的制造方法 |
| US9236224B2 (en) | 2013-04-26 | 2016-01-12 | Canon Kabushiki Kaisha | Drawing apparatus and method of manufacturing article |
| TWI572971B (zh) * | 2013-04-26 | 2017-03-01 | 佳能股份有限公司 | 用於利用帶電粒子束在基板上執行繪畫的繪畫裝置和半導體裝置製造方法 |
| CN104122758B (zh) * | 2013-04-26 | 2017-04-12 | 佳能株式会社 | 绘画装置和物品的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2263335A (en) | 1993-07-21 |
| GB9204703D0 (en) | 1992-04-15 |
| IT1254518B (it) | 1995-09-25 |
| ITMI920530A0 (it) | 1992-03-06 |
| JPH05259046A (ja) | 1993-10-08 |
| ITMI920530A1 (it) | 1993-09-06 |
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