GB2263335A - Optically aligned electron beam lithography - Google Patents
Optically aligned electron beam lithography Download PDFInfo
- Publication number
- GB2263335A GB2263335A GB9204703A GB9204703A GB2263335A GB 2263335 A GB2263335 A GB 2263335A GB 9204703 A GB9204703 A GB 9204703A GB 9204703 A GB9204703 A GB 9204703A GB 2263335 A GB2263335 A GB 2263335A
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- GB
- United Kingdom
- Prior art keywords
- electron beam
- wafer
- lithography
- alignment mark
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000609 electron-beam lithography Methods 0.000 title claims abstract description 39
- 238000010894 electron beam technology Methods 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 238000000206 photolithography Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 abstract description 21
- 239000004065 semiconductor Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000282461 Canis lupus Species 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002164 ion-beam lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
- H01J2237/30438—Registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
Abstract
A wafer 16 on a stage 17 is aligned for a step and repeat electron beam lithography 11, 12, 14 process by first positioning the wafer 16 optionally 13, 15 and then aligning each exposure field with electron beam registration marks. This obviates large area global electron beam registration marks. The optical system may be included within, or be external to, the electron beam equipment. <IMAGE>
Description
ELECTRON BEAM LITHOGRAPHY AND A SYSTEM THEREFOR
The present invention relates to electron beam lithography and a system therefor, and more particularly, electron beam lithography for aligning a refer globally using optical alignment marks and a electron beam lithography system comprising an optical alignment mark pattern detector.
In the fabrication of a semiconductor device, patterning a resist film is essential. A great many resist films are used as etching masks in various etching steps, for example, forming a window of an insulation layer on a semiconductor substrate in order to define a diffusion region selectively, and forming fine metal wiring of a semiconductor device.
The above patterns are formed by exposing a resist film to W light or deep UV light through a photomask and subsequently developing it. This technology is referred to as photolithography.
However, when forming a pattern by using UV light or deep UV light as above, the resolution of optical lithography is limited to somewhat less than lssm.
Recently, with increasing the density of semiconductor device, alternatives to optical lithography,which may form submicron patterns, have been developed, including electron beam lithography, x-ray lithography and ion beam lithography.
Electron beam lithography (hereinafter referred to as "EBL") is the process of forming circuit patterns by using a focused electron beam. Using an electron beam, fine patterns less than lym can be directly written on a resist film formed on a semiconductor wafer or a resist film formed on a photomask in a photolithography process.
A pattern formed in a lay-out stage is registered as an image pattern in a computer and electron beam is controlled by an electron deflecting plate according to a signal from the computer. Accordingly, EBL provides the ability to produce features less than lssm directly on a wafer without the use of a mask. This technique can provide extremely accurate layer-to-layer registration and therefore, features as small as O.lym can be made with this technique. This is possible because, although electrons do possess wave-like properties, for the energies used in EBL systems, their wavelengths are on the order of 0.2-0.5 . As a result, diffraction effects which can limit resolution in optical lithography are avoided.Therefore, the method for forming a pattern by
EBL process draws a great deal of attention and great efforts for the practical utilization of the EBL process commercially are continuously being made.
In a general process for forming a semiconductor device, the lithography process for forming patterns is carried out in multi-steps. Each pattern formed during any particular step must be aligned and transferred very precisely with previously formed patterns. EBL is extremely slow when compared to conventional optical lithography. Therefore, in forming patterns generally, resist patterns are formed according to the faster conventional optical lithograph process and very fine patterns are formed by exposing resists using an electron beam, thereby reducing the manufacturing time of a semiconductor device. The electron beam system used in the above EBL process comprises an electron beam optical system and a mechanical stage.
When a pattern is formed according to EBL process on only one resist layer inalithography process forming patterns in multi-steps as above, after optical lithography, a necessary resist layer is exposed by the
EBL process. Then, another optical lithography process succeeds the EBL process.
In conventional EBL, it is known to form alignment marks on the wafer and to employ the marks for precisely registering the beam with respect to the wafer. In this way, the beam position is accurately initialized for a subsequent writing operation. During the registration step, the alignment marks are scanned by the beam in both the X and Y directions. Electrons backscattered from the scanned marks are detected and utilized to generate electrical signals. These signals serve as the basis for precisely positioning the beam with respect to the wafer.
If the wafer is to be written by a machine capable of producing a very high speed integrated circuit, it would typically include a first alignment mark for aligning the wafer globally and a second alignment mark which allows alignment at each field or die unit of the area scanned by the electron beam. Alignment marks may be a pattern of either a high atomic number metal pedestal or a feature etched in the silicon or SiO2.
Alignment is achieved by detecting backscattered electrons from such marks.
At this time, the first alignment mark pattern in electron beam lithography has an area of about lmm2, which is a hundred times or more as large as that of an alignment mark pattern in optical lithography, for preventing the resist of the active device region from being exposed when scanning the electron beam in order to detect the alignment mark pattern.
This makes it impossible to form the first alignment mark pattern on scribe corridor by which the chips are separated from each other. Therefore, the first alignment mark pattern is formed by an additional process. For example, there is described in U.S. Patent
No. 4,407,933 a method for exposing the resist with an electron beam which comprises forming tantalum disilicide alignment marks in spaced-apart regions of a wafer.
The above second alignment mark pattern is typically formed to have the shape of a cross in the separation regions for chips. FIG. 1 of the accompanying drawings illustrates a wafer which has the first and second alignment marks formed thereon and is to be exposed by using an electron beam, wherein reference numeral 1 represents a wafer, reference numeral 2 represents a first alignment mark pattern, reference numeral 3 represents a field, and reference numeral 4 represents a second alignment mark pattern.
When a resist coated on the wafer shown in FIG. 1 is exposed by an electron beam after conventional optical lithography, the first alignment mark pattern 2 is detected at first by scanning the wafer 1 with an electron beam. Then, the entire wafer 1 is rotationally and translationally aligned. Thereafter, for exposing the wafer with an electron beam by field or die units, the second alignment mark pattern 4 is detected to align the wafer again and expose the resist with electron beam by a field or die unit. After exposing a field or die unit of the resist, another second alignment mark pattern is detected in order to align the wafer again by the mechanical stage and to expose another field or die unit.
According to the above method, an electron beam is used in detecting the first alignment mark pattern for
EBL. Therefore1 an electron beam resist coated on the wafer may be exposed when scanning the wafer with the electron beam. Additionally, since the wafer is not positioned precisely, a spaced region without semiconductor devices should be formed along the wafer's edge, having a width of about lmm.
Besides the above, the first alignment mark pattern should be formed by a separate process using an electron beam, and therefore, the throughput of the wafer is lowered.
Hence, an object of the present invention is to provide a method for electron beam exposure without forming a first alignment mark pattern or detecting it by means of an electron beam.
Another object of the present invention is to provide a system for electron beam exposure applicable to the above method.
Briefly, according to the present invention, there is provided a method for exposing an electron beam resist coated on a wafer which comprises firstly aligning the wafer by detecting an alignment mark pattern used in optical lithography, secondly aligning the wafer by detecting the alignment mark pattern for electron beam lithography formed on the wafer and then exposing the resist with an electron beam forming patterns in multi-steps by means of optical lithography and electron beam lithography.
Additionally, according to the present invention, there is provided an electron beam lithography system comprising an electron beam system capable of scanning a wafer with an electron beam, a mechanical stage used to position the wafer under the electron beam, and an optical alignment mark pattern detector for aligning the wafer firstly and globally.
Further features and advantages of the present invention will be apparent to those skilled in the art from the following detailed description, given by way of example, of embodiments of the invention, with reference to the accompanying drawings, in which:
FIG. 1 illustrates a conventional wafer for electron beam lithography which has the first and second alignment marks formed thereon;
FIG. 2 illustrates a wafer for electron beam lithography according to an embodiment of the present invention;
FIG. 3 illustrates an EBL system provided with an optical alignment mark pattern detector according to an embodiment of the present invention.
In Fig. 2, the reference numerals have the same designations as in Fig. 1.
In conventional optical lithography, alignment mark patterns are previously formed on the wafer with a photoresist formed thereon to be exposed by an optical exposing means, and then detected to produce electrical signals. According to the signals, the relative position of the mask with respect to the wafer is determined.(S.
Wolf and R.N. Tauber, Silicon Processing for the VLSI
Era, Vol. 1, PP473-476, 1987)
Alignment in wafer steppers can be performed globally and locally. Global alignment performs rotational and translational alignment of the entire wafer. Local alignment provides alignment to a target that is a mark within the particular die which is in position for immediate exposure and is also referred to as die-by-die or field-by-field alignment. Global alignment is usually done at a remote alignment station before a wafer is sent under the projection lens for exposure. When the overlay tolerance is great (for example: 0.7pm or more), the wafer is exposed only after the global alignment without local alignment. When local alignment is used, global alignment always precedes the sequence of local alignments.
The method of the present invention is characterized in that the wafer is firstly aligned in an electron beam exposure step using the optical aligning method as above.
That is, firstly, the wafer is globally aligned by an optical aligning method using the means for detecting optical alignment mark patterns, and secondly, the wafer is locally aligned by scanning the wafer with an electron beam and detecting backscattered electrons from the alignment mark for EBL.
At first, the wafer 1 in FIG. 2 is globally aligned by detecting the optical alignment mark pattern (not shown) formed on the wafer. At this time, the overlay tolerance in the global alignment step is 5ssm or less. After the above first alignment, local alignment is carried out by detecting the second alignment mark pattern 4 using an electron beam. In this local alignment, the overlay tolerance is 0.1cm or less.
FIG. 3 illustrates a system provided with an optical alignment mark pattern detector according to an embodiment of the present invention. Reference numeral 11 represents an electron beam system, reference numeral 12 represents an electron beam, reference numeral 13 represents a sensor for optical alignment mark patterns, reference numeral 14 represents an electron condenser lens, reference numeral 15 represents an optical lens, reference numeral 16 represents a wafer and reference numeral 17 represents a mechanical stage.
The above optical alignment mark pattern detector comprises a sensor 13 and an optical lens 15 . This optical alignment mark pattern detector may be positioned to one side of or inside the electron beam system 11
When exposing the electron beam resist layer formed on a wafer as shown in FIG. 2, the sensor 13 detects through the optical lens 15 an optical alignment mark pattern formed on the semiconductor wafer 1 . Then, on the basis of the signals from the sensor 13 the semiconductor wafer 1 is aligned globally at first.
Thereafter, the wafer 1 is scanned with an electron beam 12 and the backscattered electrons from the electron beam alignment mark pattern 4 is detected. On this basis, the wafer 1 is then aligned again (that is, locally aligned).
When a resist layer formed on a wafer is exposed with an electron beam, the alignment mark pattern need not be formed for global alignment of the entire wafer as in a conventional EBL process. Therefore, the unnecessary exposure of electron beam resist can be avoided, and throughput of the semiconductor wafer is enhanced.
Additionally, if an EBL process is performed by means of the EBL system provided with an optical alignment mark pattern detector , without additional steps (for example, the steps for forming a global alignment mark pattern for EBL and aligning globally the entire wafer using an electron beam), the EBL process can be used in multi-steps for forming patterns, comprising optical lithography process. Therefore, the lithography process is simplified, and the EBL and optical lithography processes can be simultaneously employed without difficulty.
Claims (11)
1. A method for exposing an electron beam resist coated on a wafer for use in forming patterns in multi-steps by means of optical lithography and electron beam lithography, the method comprising the steps of;
firstly aligning the wafer by detecting an alignment mark pattern used in optical lithography;
secondly aligning the wafer by detecting the alignment mark pattern for electron beam lithography formed on the wafer;
and then exposing the resist with electron beam.
2. A method as claimed in claim 1, wherein the overlay tolerance in said step of firstly aligning the wafer is 5 pm or less.
3. A method as claimed in claim 1 or 2, wherein the overlay tolerance in said step of secondly aligning the wafer is 0.1 pm or less.
4. A method for exposing an electron beam resist coated on a wafer substantially as herein described with reference to Figures 2 and 3 of the accompanying drawings.
5. A method of forming patterns in multi-steps on a wafer by means of optical lithography and electron beam lithography comprising the method of any preceding claim.
6. An electron beam lithography system comprising:
an electron beam system capable of scanning a wafer with an electron beam;
means for positioning the wafer under the electron beam; and
detecting means for detecting optical alignment mark patterns for aligning the wafer globally.
7. A system as claimed in claim 6 wherein said means for positioning comprise a mechanical stage.
8. A system as claimed in claim 6 or 7, wherein said detecting means consists of an optical lens and a sensor for optical alignment mark patterns.
9. A system as claimed in claim 6, 7 or 8, wherein said detecting means is located to one side of said electron beam system.
10. A system as claimed in claims 6, 7 or 8 wherein said detecting means is located inside said electron beam system.
11. An electron beam lithography and a system therefor substantially as hereinbefore described with reference to
Figure 3 with or without reference to Figure 2 of the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR920000208 | 1992-01-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9204703D0 GB9204703D0 (en) | 1992-04-15 |
| GB2263335A true GB2263335A (en) | 1993-07-21 |
Family
ID=19327690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9204703A Withdrawn GB2263335A (en) | 1992-01-09 | 1992-03-04 | Optically aligned electron beam lithography |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH05259046A (en) |
| GB (1) | GB2263335A (en) |
| IT (1) | IT1254518B (en) |
| TW (1) | TW208757B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747816A (en) * | 1995-07-05 | 1998-05-05 | Hitachi, Ltd. | Charged particle beam apparatus |
| FR2792065A1 (en) * | 1999-04-09 | 2000-10-13 | Centre Nat Etd Spatiales | Observation apparatus for semiconductors during manufacturing of PCBs has microscopes, plate and manoeuvre panel allowing corresponding displacement of specimens and microscopes |
| EP1091385A1 (en) * | 1998-09-30 | 2001-04-11 | Advantest Corporation | Electron-beam lithography system and alignment method |
| US9236224B2 (en) | 2013-04-26 | 2016-01-12 | Canon Kabushiki Kaisha | Drawing apparatus and method of manufacturing article |
| DE102019128860A1 (en) * | 2019-10-25 | 2020-11-26 | Carl Zeiss Smt Gmbh | Method for measuring a structure and substrate for semiconductor lithography |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1291575A (en) * | 1969-07-03 | 1972-10-04 | Texas Instruments Ltd | Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby |
| GB1597203A (en) * | 1977-01-20 | 1981-09-03 | Siemens Ag | Position setting systems using a scanning beam |
| US4385838A (en) * | 1980-01-19 | 1983-05-31 | Nippon Kogaku K. K. | Alignment device |
-
1992
- 1992-02-20 TW TW081101268A patent/TW208757B/zh active
- 1992-03-04 GB GB9204703A patent/GB2263335A/en not_active Withdrawn
- 1992-03-06 IT ITMI920530A patent/IT1254518B/en active
- 1992-03-19 JP JP4064085A patent/JPH05259046A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1291575A (en) * | 1969-07-03 | 1972-10-04 | Texas Instruments Ltd | Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby |
| GB1597203A (en) * | 1977-01-20 | 1981-09-03 | Siemens Ag | Position setting systems using a scanning beam |
| US4385838A (en) * | 1980-01-19 | 1983-05-31 | Nippon Kogaku K. K. | Alignment device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747816A (en) * | 1995-07-05 | 1998-05-05 | Hitachi, Ltd. | Charged particle beam apparatus |
| EP0752715B1 (en) * | 1995-07-05 | 2001-05-30 | Hitachi, Ltd. | Charged particle beam apparatus |
| EP1091385A1 (en) * | 1998-09-30 | 2001-04-11 | Advantest Corporation | Electron-beam lithography system and alignment method |
| FR2792065A1 (en) * | 1999-04-09 | 2000-10-13 | Centre Nat Etd Spatiales | Observation apparatus for semiconductors during manufacturing of PCBs has microscopes, plate and manoeuvre panel allowing corresponding displacement of specimens and microscopes |
| US9236224B2 (en) | 2013-04-26 | 2016-01-12 | Canon Kabushiki Kaisha | Drawing apparatus and method of manufacturing article |
| DE102019128860A1 (en) * | 2019-10-25 | 2020-11-26 | Carl Zeiss Smt Gmbh | Method for measuring a structure and substrate for semiconductor lithography |
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI920530A1 (en) | 1993-09-06 |
| ITMI920530A0 (en) | 1992-03-06 |
| IT1254518B (en) | 1995-09-25 |
| JPH05259046A (en) | 1993-10-08 |
| TW208757B (en) | 1993-07-01 |
| GB9204703D0 (en) | 1992-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |