IT1254518B - Litografia a pennello elettronico e un relativo sistema - Google Patents

Litografia a pennello elettronico e un relativo sistema

Info

Publication number
IT1254518B
IT1254518B ITMI920530A ITMI920530A IT1254518B IT 1254518 B IT1254518 B IT 1254518B IT MI920530 A ITMI920530 A IT MI920530A IT MI920530 A ITMI920530 A IT MI920530A IT 1254518 B IT1254518 B IT 1254518B
Authority
IT
Italy
Prior art keywords
electronic brush
wafer
lithography
alignment
optical
Prior art date
Application number
ITMI920530A
Other languages
English (en)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI920530A0 publication Critical patent/ITMI920530A0/it
Publication of ITMI920530A1 publication Critical patent/ITMI920530A1/it
Application granted granted Critical
Publication of IT1254518B publication Critical patent/IT1254518B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/30438—Registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Viene descritto un metodo per esporre un materiale protettivo al fascio elettronico applicato su un wafer (1) che comprende inizialmente l'allineamento del wafer (1) rivelando un disegno della traccia di allineamento usata in litografia ottica, successivamente l'allineamento del wafer (1) rivelando il disegno della traccia di allineamento (4) per litografia a pennello elettronico formata sul wafer (1), e poi l'esposizione del materiale protettivo usando un pennello elettronico nella formazione di disegni a più fasi mediante litografia ottica e litografia a pennello elettronico (EBL). E' anche descritto un sistema di litografia a pennello elettronico comprendente un sistema a pennello elettronico (11, 12 e 14) in grado di scansionare un wafer con un pennello elettronico (12), una piattaforma meccanica (17) usata per posizionare il wafer (16) sotto il pennello elettronico, e mezzi rivelatori (13, 15) per i disegni delle tracce di allineamento ottiche per allineare il wafer inizialmente e globalmente. Il processo fotolitografico è semplificato, e i processi EBL e di litografia ottica possono essere simultaneamente impiegati senza difficoltà.
ITMI920530A 1992-01-09 1992-03-06 Litografia a pennello elettronico e un relativo sistema IT1254518B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR920000208 1992-01-09

Publications (3)

Publication Number Publication Date
ITMI920530A0 ITMI920530A0 (it) 1992-03-06
ITMI920530A1 ITMI920530A1 (it) 1993-09-06
IT1254518B true IT1254518B (it) 1995-09-25

Family

ID=19327690

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI920530A IT1254518B (it) 1992-01-09 1992-03-06 Litografia a pennello elettronico e un relativo sistema

Country Status (4)

Country Link
JP (1) JPH05259046A (it)
GB (1) GB2263335A (it)
IT (1) IT1254518B (it)
TW (1) TW208757B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3141732B2 (ja) * 1995-07-05 2001-03-05 株式会社日立製作所 荷電粒子線装置
JP2000114137A (ja) * 1998-09-30 2000-04-21 Advantest Corp 電子ビーム露光装置及びアライメント方法
FR2792065B1 (fr) * 1999-04-09 2001-07-13 Centre Nat Etd Spatiales Installation et procede d'observation de deux specimens identiques
JP6195349B2 (ja) * 2013-04-26 2017-09-13 キヤノン株式会社 描画装置、描画方法、および物品の製造方法
DE102019128860A1 (de) * 2019-10-25 2020-11-26 Carl Zeiss Smt Gmbh Verfahren zur Vermessung einer Struktur und Substrat für die Halbleiterlithographie

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1291575A (en) * 1969-07-03 1972-10-04 Texas Instruments Ltd Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby
DE2702448C2 (de) * 1977-01-20 1982-12-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Positionierung eines mit einer Marke versehenen Werkstückes relativ zu einem Abtastfeld bzw. zu einer Maske
US4385838A (en) * 1980-01-19 1983-05-31 Nippon Kogaku K. K. Alignment device

Also Published As

Publication number Publication date
JPH05259046A (ja) 1993-10-08
GB2263335A (en) 1993-07-21
TW208757B (it) 1993-07-01
ITMI920530A0 (it) 1992-03-06
GB9204703D0 (en) 1992-04-15
ITMI920530A1 (it) 1993-09-06

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