TW202517130A - 電阻變化材料、開關元件用材料、開關層、開關元件及記憶裝置 - Google Patents

電阻變化材料、開關元件用材料、開關層、開關元件及記憶裝置 Download PDF

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Publication number
TW202517130A
TW202517130A TW113111134A TW113111134A TW202517130A TW 202517130 A TW202517130 A TW 202517130A TW 113111134 A TW113111134 A TW 113111134A TW 113111134 A TW113111134 A TW 113111134A TW 202517130 A TW202517130 A TW 202517130A
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TW
Taiwan
Prior art keywords
less
switch
current density
electrode
resistance
Prior art date
Application number
TW113111134A
Other languages
English (en)
Chinese (zh)
Inventor
須藤祐司
双逸
柄木田航介
松下佳雅
佐藤史雄
Original Assignee
國立大學法人東北大學
日商日本電氣硝子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 國立大學法人東北大學, 日商日本電氣硝子股份有限公司 filed Critical 國立大學法人東北大學
Publication of TW202517130A publication Critical patent/TW202517130A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
TW113111134A 2023-04-20 2024-03-26 電阻變化材料、開關元件用材料、開關層、開關元件及記憶裝置 TW202517130A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2023069443 2023-04-20
JP2023-069443 2023-04-20
JP2023-114479 2023-07-12
JP2023114479 2023-07-12

Publications (1)

Publication Number Publication Date
TW202517130A true TW202517130A (zh) 2025-04-16

Family

ID=93152822

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113111134A TW202517130A (zh) 2023-04-20 2024-03-26 電阻變化材料、開關元件用材料、開關層、開關元件及記憶裝置

Country Status (5)

Country Link
JP (1) JPWO2024219142A1 (https=)
KR (1) KR20250126100A (https=)
CN (1) CN120712910A (https=)
TW (1) TW202517130A (https=)
WO (1) WO2024219142A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687830B2 (en) 2004-09-17 2010-03-30 Ovonyx, Inc. Phase change memory with ovonic threshold switch
US7382647B1 (en) * 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
JP4956598B2 (ja) * 2009-02-27 2012-06-20 シャープ株式会社 不揮発性半導体記憶装置及びその製造方法
JP6151650B2 (ja) * 2014-01-17 2017-06-21 ソニーセミコンダクタソリューションズ株式会社 記憶装置
KR102295524B1 (ko) 2017-03-27 2021-08-30 삼성전자 주식회사 메모리 소자

Also Published As

Publication number Publication date
KR20250126100A (ko) 2025-08-22
CN120712910A (zh) 2025-09-26
WO2024219142A1 (ja) 2024-10-24
JPWO2024219142A1 (https=) 2024-10-24

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