KR20250126100A - 저항 변화 재료, 스위치 소자용 재료, 스위치층, 스위치 소자 및 기억 장치 - Google Patents

저항 변화 재료, 스위치 소자용 재료, 스위치층, 스위치 소자 및 기억 장치

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Publication number
KR20250126100A
KR20250126100A KR1020257024264A KR20257024264A KR20250126100A KR 20250126100 A KR20250126100 A KR 20250126100A KR 1020257024264 A KR1020257024264 A KR 1020257024264A KR 20257024264 A KR20257024264 A KR 20257024264A KR 20250126100 A KR20250126100 A KR 20250126100A
Authority
KR
South Korea
Prior art keywords
less
switch
current density
resistance change
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257024264A
Other languages
English (en)
Korean (ko)
Inventor
유지 스토우
이 슈앙
코스케 카라키다
요시마사 마츠시타
후미오 사토
Original Assignee
고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠
니폰 덴키 가라스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠, 니폰 덴키 가라스 가부시키가이샤 filed Critical 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠
Publication of KR20250126100A publication Critical patent/KR20250126100A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
KR1020257024264A 2023-04-20 2024-03-19 저항 변화 재료, 스위치 소자용 재료, 스위치층, 스위치 소자 및 기억 장치 Pending KR20250126100A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2023-069443 2023-04-20
JP2023069443 2023-04-20
JPJP-P-2023-114479 2023-07-12
JP2023114479 2023-07-12
PCT/JP2024/010661 WO2024219142A1 (ja) 2023-04-20 2024-03-19 抵抗変化材料、スイッチ素子用材料、スイッチ層、スイッチ素子及び記憶装置

Publications (1)

Publication Number Publication Date
KR20250126100A true KR20250126100A (ko) 2025-08-22

Family

ID=93152822

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257024264A Pending KR20250126100A (ko) 2023-04-20 2024-03-19 저항 변화 재료, 스위치 소자용 재료, 스위치층, 스위치 소자 및 기억 장치

Country Status (5)

Country Link
JP (1) JPWO2024219142A1 (https=)
KR (1) KR20250126100A (https=)
CN (1) CN120712910A (https=)
TW (1) TW202517130A (https=)
WO (1) WO2024219142A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086526A (ja) 2004-09-17 2006-03-30 Ovonyx Inc オボニック閾値スイッチを有する相変化メモリ
JP2018164085A (ja) 2017-03-27 2018-10-18 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 可変抵抗物質層を含むメモリ素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7382647B1 (en) * 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
JP4956598B2 (ja) * 2009-02-27 2012-06-20 シャープ株式会社 不揮発性半導体記憶装置及びその製造方法
JP6151650B2 (ja) * 2014-01-17 2017-06-21 ソニーセミコンダクタソリューションズ株式会社 記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086526A (ja) 2004-09-17 2006-03-30 Ovonyx Inc オボニック閾値スイッチを有する相変化メモリ
JP2018164085A (ja) 2017-03-27 2018-10-18 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 可変抵抗物質層を含むメモリ素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Lencer, D. et al., "A map for phase-change materials", Nat. Mater. 7, 972-977(2008)

Also Published As

Publication number Publication date
CN120712910A (zh) 2025-09-26
WO2024219142A1 (ja) 2024-10-24
JPWO2024219142A1 (https=) 2024-10-24
TW202517130A (zh) 2025-04-16

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