JPWO2024219142A1 - - Google Patents
Info
- Publication number
- JPWO2024219142A1 JPWO2024219142A1 JP2025515102A JP2025515102A JPWO2024219142A1 JP WO2024219142 A1 JPWO2024219142 A1 JP WO2024219142A1 JP 2025515102 A JP2025515102 A JP 2025515102A JP 2025515102 A JP2025515102 A JP 2025515102A JP WO2024219142 A1 JPWO2024219142 A1 JP WO2024219142A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/10—Phase change RAM [PCRAM, PRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023069443 | 2023-04-20 | ||
| JP2023114479 | 2023-07-12 | ||
| PCT/JP2024/010661 WO2024219142A1 (ja) | 2023-04-20 | 2024-03-19 | 抵抗変化材料、スイッチ素子用材料、スイッチ層、スイッチ素子及び記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024219142A1 true JPWO2024219142A1 (https=) | 2024-10-24 |
Family
ID=93152822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025515102A Pending JPWO2024219142A1 (https=) | 2023-04-20 | 2024-03-19 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2024219142A1 (https=) |
| KR (1) | KR20250126100A (https=) |
| CN (1) | CN120712910A (https=) |
| TW (1) | TW202517130A (https=) |
| WO (1) | WO2024219142A1 (https=) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7687830B2 (en) | 2004-09-17 | 2010-03-30 | Ovonyx, Inc. | Phase change memory with ovonic threshold switch |
| US7382647B1 (en) * | 2007-02-27 | 2008-06-03 | International Business Machines Corporation | Rectifying element for a crosspoint based memory array architecture |
| JP4956598B2 (ja) * | 2009-02-27 | 2012-06-20 | シャープ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| JP6151650B2 (ja) * | 2014-01-17 | 2017-06-21 | ソニーセミコンダクタソリューションズ株式会社 | 記憶装置 |
| KR102295524B1 (ko) | 2017-03-27 | 2021-08-30 | 삼성전자 주식회사 | 메모리 소자 |
-
2024
- 2024-03-19 JP JP2025515102A patent/JPWO2024219142A1/ja active Pending
- 2024-03-19 CN CN202480012998.9A patent/CN120712910A/zh active Pending
- 2024-03-19 WO PCT/JP2024/010661 patent/WO2024219142A1/ja not_active Ceased
- 2024-03-19 KR KR1020257024264A patent/KR20250126100A/ko active Pending
- 2024-03-26 TW TW113111134A patent/TW202517130A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250126100A (ko) | 2025-08-22 |
| CN120712910A (zh) | 2025-09-26 |
| WO2024219142A1 (ja) | 2024-10-24 |
| TW202517130A (zh) | 2025-04-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250702 |