CN120712910A - 电阻变化材料、开关元件用材料、开关层、开关元件和存储装置 - Google Patents

电阻变化材料、开关元件用材料、开关层、开关元件和存储装置

Info

Publication number
CN120712910A
CN120712910A CN202480012998.9A CN202480012998A CN120712910A CN 120712910 A CN120712910 A CN 120712910A CN 202480012998 A CN202480012998 A CN 202480012998A CN 120712910 A CN120712910 A CN 120712910A
Authority
CN
China
Prior art keywords
less
current density
switching
electrode
switching element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480012998.9A
Other languages
English (en)
Chinese (zh)
Inventor
须藤祐司
双逸
柄木田航介
松下佳雅
佐藤史雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Nippon Electric Glass Co Ltd
Original Assignee
Tohoku University NUC
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Nippon Electric Glass Co Ltd filed Critical Tohoku University NUC
Publication of CN120712910A publication Critical patent/CN120712910A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
CN202480012998.9A 2023-04-20 2024-03-19 电阻变化材料、开关元件用材料、开关层、开关元件和存储装置 Pending CN120712910A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2023069443 2023-04-20
JP2023-069443 2023-04-20
JP2023-114479 2023-07-12
JP2023114479 2023-07-12
PCT/JP2024/010661 WO2024219142A1 (ja) 2023-04-20 2024-03-19 抵抗変化材料、スイッチ素子用材料、スイッチ層、スイッチ素子及び記憶装置

Publications (1)

Publication Number Publication Date
CN120712910A true CN120712910A (zh) 2025-09-26

Family

ID=93152822

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480012998.9A Pending CN120712910A (zh) 2023-04-20 2024-03-19 电阻变化材料、开关元件用材料、开关层、开关元件和存储装置

Country Status (5)

Country Link
JP (1) JPWO2024219142A1 (https=)
KR (1) KR20250126100A (https=)
CN (1) CN120712910A (https=)
TW (1) TW202517130A (https=)
WO (1) WO2024219142A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687830B2 (en) 2004-09-17 2010-03-30 Ovonyx, Inc. Phase change memory with ovonic threshold switch
US7382647B1 (en) * 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
JP4956598B2 (ja) * 2009-02-27 2012-06-20 シャープ株式会社 不揮発性半導体記憶装置及びその製造方法
JP6151650B2 (ja) * 2014-01-17 2017-06-21 ソニーセミコンダクタソリューションズ株式会社 記憶装置
KR102295524B1 (ko) 2017-03-27 2021-08-30 삼성전자 주식회사 메모리 소자

Also Published As

Publication number Publication date
KR20250126100A (ko) 2025-08-22
WO2024219142A1 (ja) 2024-10-24
JPWO2024219142A1 (https=) 2024-10-24
TW202517130A (zh) 2025-04-16

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