TW202506778A - 阻劑下層膜形成用組成物 - Google Patents
阻劑下層膜形成用組成物 Download PDFInfo
- Publication number
- TW202506778A TW202506778A TW113111737A TW113111737A TW202506778A TW 202506778 A TW202506778 A TW 202506778A TW 113111737 A TW113111737 A TW 113111737A TW 113111737 A TW113111737 A TW 113111737A TW 202506778 A TW202506778 A TW 202506778A
- Authority
- TW
- Taiwan
- Prior art keywords
- underlayer film
- resist underlayer
- group
- forming
- resist
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/14—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with halogenated phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/094—Multilayer resist systems, e.g. planarising layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-058036 | 2023-03-31 | ||
| JP2023058036 | 2023-03-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202506778A true TW202506778A (zh) | 2025-02-16 |
Family
ID=92906512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113111737A TW202506778A (zh) | 2023-03-31 | 2024-03-28 | 阻劑下層膜形成用組成物 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4692942A1 (https=) |
| JP (1) | JPWO2024204163A1 (https=) |
| KR (1) | KR20250166879A (https=) |
| CN (1) | CN120693572A (https=) |
| TW (1) | TW202506778A (https=) |
| WO (1) | WO2024204163A1 (https=) |
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| AU2002245460A1 (en) | 2002-02-11 | 2003-09-16 | Brewer Science, Inc. | Halogenated anti-reflective coatings |
| CN1977220B (zh) | 2004-07-02 | 2010-12-01 | 日产化学工业株式会社 | 含有具有卤原子的萘环的形成光刻用下层膜的组合物 |
| KR101462508B1 (ko) * | 2007-02-27 | 2014-11-17 | 닛산 가가쿠 고교 가부시키 가이샤 | 전자선 리소그래피용 레지스트 하층막 형성 조성물 |
| JP5518394B2 (ja) | 2008-08-13 | 2014-06-11 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP5297775B2 (ja) | 2008-11-28 | 2013-09-25 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP5572345B2 (ja) | 2009-08-24 | 2014-08-13 | 東京応化工業株式会社 | ポジ型レジスト組成物、レジストパターン形成方法 |
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| JP2012022261A (ja) | 2010-06-15 | 2012-02-02 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物、レジストパターン形成方法 |
| JP2012022258A (ja) | 2010-07-16 | 2012-02-02 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物、レジストパターン形成方法 |
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| JP2012168279A (ja) | 2011-02-10 | 2012-09-06 | Tokyo Ohka Kogyo Co Ltd | Ｅｕｖ用レジスト組成物、ｅｕｖ用レジスト組成物の製造方法、およびレジストパターン形成方法 |
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| KR102952227B1 (ko) | 2014-10-23 | 2026-04-13 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| JP2016090441A (ja) | 2014-11-06 | 2016-05-23 | 東京応化工業株式会社 | 電子銃の電子線照射量の安定化方法、及びアウトガス評価方法 |
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| US9580402B2 (en) | 2015-01-08 | 2017-02-28 | Sumitomo Chemical Company, Limited | Salt, acid generator, photoresist composition, and method for producing photoresist pattern |
| JP6502885B2 (ja) * | 2015-05-18 | 2019-04-17 | 信越化学工業株式会社 | レジスト下層膜材料及びパターン形成方法 |
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| JP6726559B2 (ja) | 2016-08-03 | 2020-07-22 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
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| JP7071660B2 (ja) | 2017-04-11 | 2022-05-19 | Jsr株式会社 | 感放射線性組成物及びレジストパターン形成方法 |
| JP7091762B2 (ja) | 2017-04-17 | 2022-06-28 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターンの形成方法 |
| JPWO2018194123A1 (ja) | 2017-04-20 | 2020-05-14 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| KR102395705B1 (ko) | 2017-04-21 | 2022-05-09 | 후지필름 가부시키가이샤 | Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
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| JP6904302B2 (ja) | 2017-06-14 | 2021-07-14 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP6973279B2 (ja) | 2017-06-14 | 2021-11-24 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| WO2018230334A1 (ja) | 2017-06-15 | 2018-12-20 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| JP6939702B2 (ja) | 2017-06-21 | 2021-09-22 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP6922841B2 (ja) | 2017-06-21 | 2021-08-18 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| KR102611177B1 (ko) | 2017-07-24 | 2023-12-08 | 제이에스알 가부시끼가이샤 | 극단 자외선 또는 전자선 리소그래피용 금속 함유막 형성 조성물, 극단 자외선 또는 전자선 리소그래피용 금속 함유막 및 패턴 형성 방법 |
| JP7053625B2 (ja) | 2017-07-31 | 2022-04-12 | 富士フイルム株式会社 | 感活性光線性または感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP6801115B2 (ja) | 2017-08-24 | 2020-12-16 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、レジスト膜付きマスクブランクス、レジスト膜付きマスクブランクスのパターン形成方法 |
| KR102285016B1 (ko) | 2017-08-31 | 2021-08-03 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| KR102404436B1 (ko) | 2017-08-31 | 2022-06-02 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| JP7044011B2 (ja) | 2017-09-13 | 2022-03-30 | 信越化学工業株式会社 | 重合性単量体、重合体、レジスト材料、及びパターン形成方法 |
| WO2019054282A1 (ja) | 2017-09-15 | 2019-03-21 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| JP6937834B2 (ja) | 2017-09-20 | 2021-09-22 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法 |
| TWI778122B (zh) | 2017-09-20 | 2022-09-21 | 日商富士軟片股份有限公司 | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子器件的製造方法 |
| JP6866866B2 (ja) | 2017-09-25 | 2021-04-28 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JPWO2019123842A1 (ja) | 2017-12-22 | 2020-12-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、レジスト膜付きマスクブランクス、フォトマスクの製造方法、電子デバイスの製造方法 |
| JP6988760B2 (ja) | 2017-12-27 | 2022-01-05 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| KR102361263B1 (ko) | 2018-02-28 | 2022-02-14 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성 수지 조성물용 수지의 제조 방법, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| CN111788525B (zh) | 2018-02-28 | 2023-08-08 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法、电子器件的制造方法、树脂 |
| KR102476090B1 (ko) | 2018-02-28 | 2022-12-09 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
| WO2019172054A1 (ja) | 2018-03-08 | 2019-09-12 | Jsr株式会社 | 感放射線性樹脂組成物及びその製造方法並びにレジストパターン形成方法 |
| KR20200122354A (ko) | 2018-03-26 | 2020-10-27 | 후지필름 가부시키가이샤 | 감광성 수지 조성물과 그 제조 방법, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| JP7185684B2 (ja) | 2018-03-27 | 2022-12-07 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法 |
| WO2019187803A1 (ja) | 2018-03-30 | 2019-10-03 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| EP3779596A4 (en) | 2018-03-30 | 2021-07-07 | FUJIFILM Corporation | NEGATIVE LIGHT SENSITIVE COMPOSITION FOR EUV LIGHT, METHOD OF PATTERN SHAPING AND METHOD OF MANUFACTURING AN ELECTRONIC DEVICE |
| JP6973265B2 (ja) | 2018-04-20 | 2021-11-24 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JPWO2020111068A1 (ja) | 2018-11-29 | 2021-10-28 | Jsr株式会社 | レジスト下層膜形成用組成物、レジスト下層膜及びレジストパターン形成方法 |
| WO2024070786A1 (ja) * | 2022-09-30 | 2024-04-04 | Jsr株式会社 | レジスト下層膜形成用組成物及び半導体基板の製造方法 |
-
2024
- 2024-03-26 JP JP2025510908A patent/JPWO2024204163A1/ja active Pending
- 2024-03-26 CN CN202480015367.2A patent/CN120693572A/zh active Pending
- 2024-03-26 EP EP24780276.2A patent/EP4692942A1/en active Pending
- 2024-03-26 WO PCT/JP2024/011894 patent/WO2024204163A1/ja not_active Ceased
- 2024-03-26 KR KR1020257027718A patent/KR20250166879A/ko active Pending
- 2024-03-28 TW TW113111737A patent/TW202506778A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN120693572A (zh) | 2025-09-23 |
| KR20250166879A (ko) | 2025-11-28 |
| WO2024204163A1 (ja) | 2024-10-03 |
| JPWO2024204163A1 (https=) | 2024-10-03 |
| EP4692942A1 (en) | 2026-02-11 |
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