TW202312333A - 晶圓之移轉方法 - Google Patents

晶圓之移轉方法 Download PDF

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TW202312333A
TW202312333A TW111130768A TW111130768A TW202312333A TW 202312333 A TW202312333 A TW 202312333A TW 111130768 A TW111130768 A TW 111130768A TW 111130768 A TW111130768 A TW 111130768A TW 202312333 A TW202312333 A TW 202312333A
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柿沼良典
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日商迪思科股份有限公司
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Abstract

[課題]提供一種晶圓之移轉方法，其可以在不對晶圓造成損傷的情形下做成晶圓的移轉。 [解決手段]一種晶圓之移轉方法，將已將晶圓定位在具備有容置晶圓之開口部之第一框架的該開口部且晶圓的一面已和第一框架一起被第一膠帶壓接之晶圓，移轉至已壓接於第二框架之第二膠帶，前述晶圓之移轉方法包含以下步驟：第二膠帶壓接步驟，將已壓接於第二框架之第二膠帶壓接於晶圓的另一面，前述第二框架具有比該第一框架的開口部的內徑更小之外徑；第一膠帶切斷步驟，沿著該第二框架的外周來切斷第一膠帶；壓接力降低步驟，對該第一膠帶賦與外在刺激，使已壓接於晶圓的一面之壓接力降低；及剝離步驟，將該第一膠帶從已壓接於該第二膠帶之晶圓的一面剝離。

Description

晶圓之移轉方法
本發明是有關於一種將一面已和第一框架一起被壓接於第一膠帶之晶圓移轉至已壓接於第二框架之第二膠帶之晶圓之移轉方法。
IC、LSI等複數個器件被交叉之複數條分割預定線區劃且形成於正面之晶圓，可藉由切割裝置來分割成一個個的器件晶片，並且可將已分割之器件晶片應用在行動電話、個人電腦等的電氣機器上。
又，也有以下之技術被提出：將膠帶貼附在晶圓的正面來保持於工作夾台，且從晶圓的背面將對晶圓具有穿透性之波長的雷射光線的聚光點定位在分割預定線的內部來照射，而在晶圓內部形成改質層，並賦與外力而以該改質層作為分割的起點來將晶圓分割成一個個的器件晶片(參照例如專利文獻1)。
順道一提，由於在從膠帶拾取一個個的器件晶片時，必須設成將膠帶貼附於晶圓的背面而使晶圓的正面露出之狀態，所以已有將晶圓從一個膠帶移轉到其他膠帶而使正面露出之技術被提出(參照例如專利文獻2)。 先前技術文獻 專利文獻
專利文獻1：日本特許第3408805號公報 專利文獻2 ：日本特許第6695173號公報
發明欲解決之課題
在執行上述之專利文獻2所揭示之技術時，必須將已貼附於晶圓之膠帶沿著晶圓的外徑來切斷，在一些情況下，已有導致在晶圓上造成損傷之問題。
據此，本發明之目的在於提供一種晶圓之移轉方法，其可以在不對晶圓造成損傷的情形下將晶圓從一個膠帶移轉到其他膠帶。 用以解決課題之手段
根據本發明，可提供一種晶圓之移轉方法，將已將晶圓定位在具備有容置晶圓之開口部之第一框架的該開口部且一面已和該第一框架一起被壓接於第一膠帶之該晶圓，移轉至已壓接於第二框架之第二膠帶，前述晶圓之移轉方法具備有以下步驟： 第二膠帶壓接步驟，將已壓接於該第二框架之該第二膠帶壓接於該晶圓的另一面，其中前述第二框架具有比該第一框架的該開口部的內徑更小之外徑； 第一膠帶切斷步驟，沿著該第二框架的外周來切斷該第一膠帶； 壓接力降低步驟，對該第一膠帶賦與外在刺激，使已壓接於該晶圓的前述一面之壓接力降低；及 剝離步驟，將該第一膠帶從已壓接於該第二膠帶之該晶圓的前述一面剝離。
較佳的是，該壓接力降低步驟是在該第二膠帶壓接步驟之前實施。較佳的是，該第一膠帶為紫外線硬化型膠帶，且該壓接力降低是對該第一膠帶照射紫外線來實施。 發明效果
根據本發明之晶圓之移轉方法，可以在不損傷晶圓的情形下將晶圓從第一膠帶移轉至第二膠帶。
用以實施發明之形態
以下，針對本發明實施形態之晶圓之移轉方法，一邊參照附加圖式一邊詳細地說明。
以下說明之晶圓之移轉方法之實施形態，是在例如將膠帶貼附於晶圓的正面來保持於工作夾台，且從晶圓的背面將對晶圓具有穿透性之波長的雷射光線的聚光點定位在分割預定線的內部來照射而形成改質層之後實施。並且，實施本發明之晶圓之移轉方法，而使晶圓的正面露出於上方後，賦與外力來將晶圓分割成一個個的器件晶片，且於之後實施拾取步驟。
於圖1所顯示的是在本實施形態中成為被加工物之半導體的晶圓10。晶圓10是複數個器件12被交叉之複數條分割預定線14區劃且形成於正面10a之構成。
如圖1所示，與上述之晶圓10一起準備環狀的第一框架F1、與表面具備有黏著層之第一膠帶T1，前述第一框架F1具備有可容置晶圓10的開口部F1a。將晶圓10的一面亦即正面10a朝向下方，並將另一面亦即背面10b朝向上方來定位在該開口部F1a的中央，並將晶圓10的正面10a與第一框架F1一起壓接於第一膠帶T1，而如圖1的下段所示地使晶圓10透過第一膠帶T1保持於第一框架F1。
如上述，若使晶圓10保持於第一框架F1後，即搬送至圖2(a)所示之雷射加工裝置20(僅顯示一部分)。雷射加工裝置20具備有省略圖示之工作夾台、及照射對晶圓10具有穿透性之波長的雷射光線LB之雷射光線照射單元的聚光器22。該工作夾台具備有：X軸進給機構，將該工作夾台與該聚光器22相對地在X軸方向上加工進給；Y軸進給機構，將該工作夾台與該聚光器22相對地在和X軸方向正交之Y軸方向上加工進給；及旋轉驅動機構，使該工作夾台旋轉(皆省略圖示)。
已被搬送至雷射加工裝置20之晶圓10是以晶圓10的背面10b側成為上方的方式被該工作夾台吸引保持。已保持在該工作夾台之晶圓10是使用校準組件(省略圖示)來實施校準步驟，而檢測形成於正面10a之分割預定線14的位置，並且藉由該旋轉驅動機構來旋轉晶圓10，使朝第一方向伸長之分割預定線14對齊於X軸方向，其中前述校準組件具備有可照射紅外線，並拍攝從晶圓10的背面10b穿透之該紅外線的反射光之紅外線拍攝元件。所檢測出之分割預定線14的位置之資訊可記憶在未圖示之控制組件。
依據藉由上述之校準步驟所檢測出之分割預定線14的位置資訊，將雷射光線照射單元的聚光器22定位在朝第一方向伸長之分割預定線14的加工開始位置，並從晶圓10的背面10b將雷射光線LB的聚光點定位在分割預定線14的內部來進行照射，並且將晶圓10和該工作夾台一起朝X軸方向加工進給來沿著晶圓10之朝第一方向伸長之預定的分割預定線14形成改質層100。已沿著預定的分割預定線14形成改質層100後，即可將晶圓10朝Y軸方向分度進給相當於分割預定線14的間隔，來將在Y軸方向上相鄰之朝第一方向伸長的未加工的分割預定線14定位到聚光器22的正下方。然後，與上述同樣地進行，將雷射光線LB的聚光點定位在晶圓10的分割預定線14的內部來照射，且將晶圓10朝X軸方向加工進給來形成改質層100，藉由重複這些作法，而沿著朝第一方向伸長之全部的分割預定線14形成改質層100。再者，改質層100是形成於分割預定線14的內部之構成，雖然實際上無法從外部目視，但在圖2以後的說明中，為了方便說明，是以虛線來表示。
接著，使晶圓10旋轉90度，使和已經形成有改質層100之第一方向的分割預定線14正交之朝第二方向伸長之分割預定線14對齊於X軸方向。然後，對朝第二方向伸長之各分割預定線14的內部，也和上述提到的同樣地進行來將雷射光線LB的聚光點定位並進行照射，而如圖2(b)所示，沿著形成於晶圓10的正面10a之全部的分割預定線14形成改質層100。如以上，在實施了雷射加工後，接著實施用以對將晶圓10分割成一個個的器件晶片後之拾取步驟作預備之本實施形態的晶圓之移轉方法。再者，對適合於適用本發明之晶圓之移轉方法的晶圓10之加工，並不限定於上述之雷射加工，亦可為例如使用圖3所示之切削裝置30來實施之切削加工。一邊參照圖3一邊說明該切削加工。
將已依據圖1說明過之透過第一膠帶T1而被保持在第一框架F1之晶圓10搬送至圖3所示之切削裝置30(僅顯示一部分)。
切削裝置30具備吸引保持晶圓10之工作夾台(省略圖示)、與對已吸引保持在該工作夾台之晶圓10進行切削之切削單元31。該工作夾台是旋轉自如地構成，且具備有將工作夾台朝圖中以箭頭X表示之方向加工進給之移動機構(省略圖示)。又，切削單元31具備呈旋轉自如地被圖中朝以箭頭Y表示之Y軸方向配設之主軸殼體32保持之主軸33、保持於主軸33的前端之環狀的切削刀片34、對切削部供給切削水之切削水噴嘴35、與覆蓋切削刀片34之刀片蓋36，且具備有使切削刀片34在Y軸方向上分度進給之Y軸移動機構(省略圖示)。已保持在主軸33的前端部之切削刀片34可藉由省略圖示之主軸馬達而在以箭頭R1所示之方向上被旋轉驅動。
在實施藉由上述之切削刀片34將晶圓10分割成一個個的器件晶片之分割步驟時，首先是將晶圓10的背面10b朝向上方來載置並吸引保持於切削裝置30的工作夾台，且實施和上述之校準步驟同樣的校準，藉此使晶圓10的朝第一方向伸長之分割預定線14對齊於X軸方向。接著，使已高速旋轉之切削刀片34從背面10b側切入已對齊於X軸方向之分割預定線14，並且將工作夾台朝X軸方向加工進給，而形成沿著分割預定線14讓晶圓10斷裂之分割溝110。此外，將切削刀片34分度進給到在Y軸方向上相鄰於已形成該分割溝110之分割預定線14，且尚未形成有分割溝110之分割預定線14上，並形成和上述同樣的分割溝110。藉由重複這些，而沿著朝第一方向伸長之全部的分割預定線14形成分割溝110。 接著，將晶圓10旋轉90度，使朝與先前已形成分割溝110之方向正交之第二方向伸長之分割預定線對齊於X軸方向，並對朝第二方向伸長之全部的分割預定線14實施上述之切削加工，而沿著形成於晶圓10之全部的分割預定線14形成分割溝110。如此實施切削加工而沿著分割預定線14將晶圓10分割成按每個器件12之器件晶片後，實施以下說明之晶圓之移轉方法。再者，在以下說明之晶圓之移轉方法的實施形態中，是當作對晶圓10實施了上述之雷射加工之實施形態來說明。
已施行上述之雷射加工之晶圓10，是如上述地定位在具備有容置晶圓10之開口部F1a之第一框架F1的開口部F1a，且已將晶圓10的一面(正面10a)和第一框架F1一起壓接於第一膠帶T1之構成。相對於此，如圖4所示，準備在第二框架F2壓接有第二膠帶T2之框架組，前述第二框架F2具有比第一框架F1的開口部F1a的內徑更小之外徑。再者，該第二框架F2具備有可容置上述之晶圓10之開口部F2a。
準備了上述之框架組後，將壓接有第二膠帶T2之第二框架F2的背面側朝向上方，且將形成有黏著層的正面側朝向下方，如圖4的下段所示，將第二框架F2定位並載置到位於第一框架F1與晶圓10之間的第一膠帶T1的區域，來對晶圓10的另一面，亦即背面10b，壓接第二膠帶T2(第二膠帶壓接步驟)。在實施第二膠帶壓接步驟之時，亦可使用省略圖示之壓接滾輪。如圖4所示，在第二框架F2之外周與第一框架F1之開口部F1a之間形成有空間S。
如上述，已實施第二膠帶壓接步驟之後，準備圖5所示之刀片切割器40。該刀片切割器40具備藉由旋轉馬達42而被旋轉驅動之切削刀片44，且該切削刀片44朝以箭頭R2表示之方向旋轉。準備了該刀片切割器40後，一邊使第一框架F1朝以箭頭R3表示之方向旋轉，一邊將切削刀片44定位在第一框架F1的開口部F1a與第二框架F2的外周之間的空間S來進行切削而形成環狀的切削線120，且沿著第二框架F2的外周來切斷第一膠帶T1(第一膠帶切斷步驟)。再者，沿著第二框架F2的外周來切斷第一膠帶T1之方法並不限定於此，也可以藉由其他的方法來切斷。
如上述，藉由第一膠帶切斷步驟切斷第一膠帶T1後，如圖5的下段所示，去除第一框架F1與第一膠帶T1的外周部分，並將第二框架F2翻轉，讓已壓接於晶圓10之殘留有中央區域之第一膠帶T1朝向上方。然後，為了實施對該第一膠帶T1賦與外在刺激來讓壓接力降低之壓接力降低步驟，如圖6所示，將紫外線照射組件50定位到第一膠帶T1的上方，並從該紫外線照射組件50對第一膠帶T1照射紫外線L。此紫外線L會成為外在刺激，而使得壓接有晶圓10之第一膠帶T1的壓接力降低(壓接力降低步驟)。
實施上述之壓接力降低步驟後，如圖7之上段所示，從已壓接於第二膠帶T2之晶圓10的正面10a剝離壓接力已被降低之第一膠帶T1(剝離步驟)。在實施該剝離步驟時，如圖所示，是藉由在第一膠帶T1的外周貼附剝離用的膠帶T3，並將該膠帶T3朝水平方向拉開來進行剝離，如圖7的下段所示，第一膠帶T1會從晶圓10的正面10a去除，而完成本實施形態之晶圓之移轉方法。再者，在上述之實施形態中，雖然所顯示的是從上方進行了作為外在刺激的賦與而實施之紫外線L的照射的例子(圖6)，但在將第一膠帶T1朝向下方的狀態下，若從下方側賦與外在刺激來使壓接力降低，並將第一膠帶T1以朝向下方的狀態來去除時，即不會有第一膠帶T1附著於第二膠帶T2之情形，因而較佳。藉由以上，可以在不對晶圓10造成損傷的情形下，將晶圓10從第一膠帶T1移轉到第二膠帶T2，且可以使晶圓10的一面亦即正面10a露出，而形成為適合於之後的拾取步驟之狀態。
如上述，將晶圓10從第一膠帶T1移轉到第二膠帶T2，而形成為使晶圓10的一面亦即正面10a露出之狀態後，即變得可藉由對晶圓10附加外力，而將改質層100作為分割之起點，將晶圓10分割成一個個的器件晶片，並於之後實施拾取步驟。
此外，在上述之實施形態中，雖然是在實施第一膠帶切斷步驟之後實施壓接力降低步驟，但本發明並非限定於此。例如，亦可設成在實施第二膠帶壓接步驟之前實施壓接力降低步驟。
又，在上述之實施形態中，雖然是藉由紫外線的照射來賦與壓接力降低步驟中的外在刺激，但本發明並非限定於此，亦可為例如藉由加熱或冷卻來賦與外在刺激而使第一膠帶T1的壓接力降低之構成。該外在刺激的選擇可根據第一膠帶T1的材質來適當決定。
此外，在上述之實施形態中，雖然是以在第一膠帶T1的正面以及第二膠帶T2的正面形成有黏著層之構成來說明，但本發明並非限定於此，亦可使用藉由加熱來發揮黏著力之聚烯烴系、聚酯系的熱壓接膠帶，來作為不具有黏著層之第一膠帶T1、第二膠帶T2。
10:晶圓 10a:正面(一面) 10b:背面(另一面) 12:器件 14:分割預定線 20:雷射加工裝置 22:聚光器 30:切削裝置 31:切削單元 32:主軸殼體 33:主軸 34:切削刀片 35:切削水噴嘴 36:刀片蓋 40:刀片切割器 42:旋轉馬達 44:切削刀片 50:紫外線照射組件 100:改質層 110:分割溝 120:切削線 F1:第一框架 F1a,F2a:開口部 F2:第二框架 LB:雷射光線 R1~R3:箭頭 S:空間 T1:第一膠帶 T2:第二膠帶 T3:膠帶 X,Y:箭頭(方向)
圖1是顯示將本實施形態之被加工物即晶圓、第一框架以及第一膠帶設為一體之態樣的立體圖。 圖2之(a)是顯示在晶圓的分割預定線的內部形成改質層之雷射加工的實施態樣的立體圖，(b)是顯示已在晶圓形成改質層之狀態的立體圖。 圖3是顯示切削加工步驟的實施態樣的立體圖。 圖4是顯示第二膠帶壓接步驟之實施態樣的立體圖。 圖5是顯示第一膠帶切斷步驟之實施態樣的立體圖。 圖6是顯示壓接力降低步驟之實施態樣的立體圖。 圖7是顯示剝離步驟之實施態樣的立體圖。
10:晶圓
10a:正面(一面)
10b:背面(另一面)
12:器件
40:刀片切割器
42:旋轉馬達
44:切削刀片
100:改質層
120:切削線
F1:第一框架
F1a,F2a:開口部
F2:第二框架
R2,R3:箭頭
S:空間
T1:第一膠帶
T2:第二膠帶

Claims (3)

  1. 一種晶圓之移轉方法，將已將晶圓定位在具備有容置晶圓之開口部之第一框架的該開口部且一面已和該第一框架一起被壓接於第一膠帶之該晶圓，移轉至已壓接於第二框架之第二膠帶，前述晶圓之移轉方法具備有以下步驟： 第二膠帶壓接步驟，將已壓接於該第二框架之該第二膠帶壓接於該晶圓的另一面，其中前述第二框架具有比該第一框架的該開口部的內徑更小之外徑； 第一膠帶切斷步驟，沿著該第二框架的外周來切斷該第一膠帶； 壓接力降低步驟，對該第一膠帶賦與外在刺激，使已壓接於該晶圓的前述一面之壓接力降低；及 剝離步驟，將該第一膠帶從已壓接於該第二膠帶之該晶圓的前述一面剝離。
  2. 如請求項1之晶圓之移轉方法，其中該壓接力降低步驟是在該第二膠帶壓接步驟之前實施。
  3. 如請求項1或2之晶圓之移轉方法，其中該第一膠帶為紫外線硬化型膠帶，且該壓接力降低是對該第一膠帶照射紫外線來實施。
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