CN115775763A - 晶片的转移方法 - Google Patents

晶片的转移方法 Download PDF

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CN115775763A
CN115775763A CN202211030583.3A CN202211030583A CN115775763A CN 115775763 A CN115775763 A CN 115775763A CN 202211030583 A CN202211030583 A CN 202211030583A CN 115775763 A CN115775763 A CN 115775763A
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柿沼良典
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Disco Corp
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Abstract

本发明提供晶片的转移方法，能够不损伤晶片而转移晶片。该晶片定位于具有对晶片进行收纳的开口部的第一框架的该开口部中，该晶片的一个面与第一框架一起通过第一带而压接，该转移方法将该晶片转移至压接于第二框架的第二带，其中，该晶片的转移方法包含如下的工序：第二带压接工序，将压接于第二框架的第二带压接于晶片的另一个面，其中，该第二框架具有比该第一框架的开口部的内径小的外径；第一带切断工序，沿着该第二框架的外周将第一带切断；压接力降低工序，对该第一带赋予外部刺激而使压接于晶片的一个面的压接力降低；以及剥离工序，从压接于该第二带的晶片的一个面剥离该第一带。

Description

晶片的转移方法
技术领域
本发明涉及晶片的转移方法，将一个面与第一框架一起压接于第一带的晶片转移至压接于第二框架的第二带。
背景技术
由交叉的多条分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片通过切割装置分割成各个器件芯片，分割得到的器件芯片被用于移动电话、个人计算机等电子设备。
另外，还提出了如下的技术：在晶片的正面上粘贴带而保持于卡盘工作台，从晶片的背面将对于晶片具有透过性的波长的激光光线的聚光点定位于分割预定线的内部而进行照射而在晶片内部形成改质层，赋予外力而以该改质层作为分割的起点将晶片分割成各个器件芯片(例如参照专利文献1)。
另外，在从带拾取各个器件芯片时，必须成为在晶片的背面上粘贴有带且使晶片的正面露出的状态，因此提出了如下的技术：使晶片从一个带转移至其他带而使正面露出(例如参照专利文献2)。
专利文献1：日本特许第3408805号公报
专利文献2：日本特许第6695173号公报
在执行上述专利文献2所公开的技术时，必须将粘贴于晶片的带沿着晶片的外径切断，根据情况，存在损伤晶片的问题。
发明内容
由此，本发明的目的在于提供晶片的转移方法，能够不损伤晶片而将晶片从一个带转移至其他带。
根据本发明，提供晶片的转移方法，该晶片定位于具有对晶片进行收纳的开口部的第一框架的该开口部中，该转移方法将一个面与该第一框架一起压接于第一带的该晶片转移至压接于第二框架的第二带，其中，该晶片的转移方法具有如下的工序：第二带压接工序，将压接于该第二框架的该第二带压接于该晶片的另一个面，其中，该第二框架具有比该第一框架的该开口部的内径小的外径；第一带切断工序，沿着该第二框架的外周将该第一带切断；压接力降低工序，对该第一带赋予外部刺激而使压接于该晶片的所述一个面的压接力降低；以及剥离工序，从压接于该第二带的该晶片的所述一个面剥离该第一带。
优选该压接力降低工序在该第二带压接工序之前实施。优选该第一带是紫外线硬化型带，对该第一带照射紫外线而实施该压接力降低。
根据本发明的晶片的转移方法，能够不损伤晶片而将晶片从第一带转移至第二带。
附图说明
图1是示出使作为本实施方式的被加工物的晶片、第一框架和第一带成为一体的方式的立体图。
图2的(a)是示出在晶片的分割预定线的内部形成改质层的激光加工的实施方式的立体图，图2的(b)是示出在晶片中形成有改质层的状态的立体图。
图3是示出切削加工的实施方式的立体图。
图4是示出第二带压接工序的实施方式的立体图。
图5是示出第一带切断工序的实施方式的立体图。
图6是示出压接力降低工序的实施方式的立体图。
图7是示出剥离工序的实施方式的立体图。
标号说明
10：晶片；10a：正面(一个面)；10b：背面(另一个面)；12：器件；14：分割预定线；20：激光加工装置；22：聚光器；30：切割装置；31：切削单元；32：主轴壳体；33：主轴；34：切削刀具；35：切削水喷嘴；36：刀具罩；40：刀具切割器；42：旋转电动机；44：切削刀具；50：紫外线照射单元；100：改质层；110：分割槽；120：切削线；F1：第一框架；F2：第二框架；T1：第一带；T2：第二带；T3：带。
具体实施方式
以下，参照附图对本发明实施方式的晶片的转移方法进行详细说明。
例如在晶片的正面上粘贴带而保持于卡盘工作台，从晶片的背面将对于晶片具有透过性的波长的激光光线的聚光点定位于分割预定线的内部进行照射而形成改质层，然后实施以下说明的晶片的转移方法的实施方式。并且，在实施本发明的晶片的转移方法而使晶片的正面向上方露出之后，赋予外力而将晶片分割成各个器件芯片，然后实施拾取工序。
在图1中示出在本实施方式中作为被加工物的半导体的晶片10。晶片10由交叉的多条分割预定线14划分而在正面10a上形成有多个器件12。
与上述晶片10一起，如图1所示，准备具有能够收纳晶片10的开口部F1a的环状的第一框架F1以及在正面上具有粘接层的第一带T1。使晶片10的一个面即正面10a朝向下方、使另一个面即背面10b朝向上方而定位于该开口部F1a的中央，将晶片10的正面10a与第一框架F1一起压接于第一带T1，如图1的下部所示，借助第一带T1而将晶片10保持于第一框架F1。
在如上述那样将晶片10保持于第一框架F1之后，搬送至图2的(a)所示的激光加工装置20(仅示出一部分)。激光加工装置20具有：省略图示的卡盘工作台；以及照射对于晶片10具有透过性的波长的激光光线LB的激光光线照射单元的聚光器22。该卡盘工作台具有：将该卡盘工作台和该聚光器22在X轴方向上相对地进行加工进给的X轴进给机构；将该卡盘工作台和该聚光器22在与X轴方向垂直的Y轴方向上相对地进行加工进给的Y轴进给机构；以及使该卡盘工作台旋转的旋转驱动机构(均省略图示)。
搬送至激光加工装置20的晶片10按照晶片10的背面10b侧成为上方的方式吸引保持于该卡盘工作台。对于该卡盘工作台所保持的晶片10，使用具有能够照射红外线并拍摄从晶片10的背面10b透过的该红外线的反射光的红外线拍摄元件的对准单元(省略图示)实施对准工序，检测形成于正面10a的分割预定线14的位置，并且通过该旋转驱动机构使晶片10旋转而使沿第一方向延伸的分割预定线14与X轴方向一致。检测出的分割预定线14的位置的信息存储于未图示的控制单元。
根据通过上述对准工序而检测的分割预定线14的位置信息，将激光光线照射单元的聚光器22定位于沿第一方向延伸的分割预定线14的加工开始位置，从晶片10的背面10b将激光光线LB的聚光点定位于分割预定线14的内部而进行照射，并且将晶片10与该卡盘工作台一起在X轴方向上进行加工进给，沿着晶片10的沿第一方向延伸的规定的分割预定线14形成改质层100。若沿着规定的分割预定线14形成了改质层100，则将晶片10在Y轴方向上按照分割预定线14的间隔进行分度进给，将在Y轴方向上相邻的沿第一方向延伸的未加工的分割预定线14定位于聚光器22的正下方。并且，与上述同样地将激光光线LB的聚光点定位于晶片10的分割预定线14的内部而进行照射，将晶片10在X轴方向上进行加工进给而形成改质层100，重复进行上述过程，沿着沿第一方向延伸的所有分割预定线14形成改质层100。另外，改质层100形成于分割预定线14的内部，实质上无法从外部进行目视，但在图2以后的说明中，为了便于说明，用虚线示出改质层100。
接着，使晶片10旋转90度，使沿与已经形成有改质层100的第一方向的分割预定线14垂直的第二方向延伸的分割预定线14与X轴方向一致。并且，对于沿第二方向延伸的各分割预定线14的内部，也与上述同样地定位激光光线LB的聚光点而进行照射，如图2的(b)所示，沿着形成于晶片10的正面10a的所有分割预定线14形成改质层100。若如上述那样实施了激光加工，接着，为了准备在将晶片10分割成各个器件芯片之后实施的拾取工序，实施本实施方式的晶片的转移方法。另外，对于适合应用本发明的晶片的转移方法的晶片10的加工不限于上述激光加工，例如可以是使用图3所示的切割装置30实施的切削加工。参照图3，对该切削加工进行说明。
将根据图1进行说明的借助第一带T1而保持于第一框架F1的晶片10搬送至图3所示的切割装置30(仅示出一部分)。
切削装置30具有：对晶片10进行吸引保持的卡盘工作台(省略图示)；以及对该卡盘工作台所吸引保持的晶片10进行切削的切削单元31。该卡盘工作台构成为旋转自如，具有在图中箭头X所示的方向上将卡盘工作台进行加工进给的移动机构(省略图示)。另外，切削单元31具有：主轴33，其旋转自如地保持于沿图中箭头Y所示的Y轴方向配设的主轴壳体32中；环状的切削刀具34，其保持于主轴33的前端；切削水喷嘴35，其向切削部提供切削水；以及刀具罩36，其覆盖切削刀具34，该切削单元31具有将切削刀具34在Y轴方向上进行分度进给的Y轴移动机构(省略图示)。主轴33的前端部所保持的切削刀具34通过省略图示的主轴电动机而在箭头R1所示的方向上旋转驱动。
在实施通过上述切削刀具34将晶片10分割成各个器件芯片的分割工序时，首先使晶片10的背面10b朝向上方，载置于切削装置30的卡盘工作台而进行吸引保持，通过实施与上述对准工序同样的对准，使晶片10的沿第一方向延伸的分割预定线14与X轴方向一致。接着，使高速旋转的切削刀具34从背面10b侧切入与X轴方向一致的分割预定线14，并且将卡盘工作台在X轴方向上进行加工进给，沿着分割预定线14形成将晶片10断开的分割槽110。另外，将切削刀具34分度进给至与形成有该分割槽110的分割预定线14在Y轴方向上相邻且未形成分割槽110的分割预定线14上，形成与上述同样的分割槽110。通过重复上述过程，沿着沿第一方向延伸的所有分割预定线14形成分割槽110。
接着，使晶片10旋转90度，使沿与之前形成有分割槽110的方向垂直的第二方向延伸的分割预定线与X轴方向一致，对沿第二方向延伸的所有分割预定线14实施上述切削加工，沿着形成于晶片10的所有分割预定线14形成分割槽110。在这样实施切削加工而沿着分割预定线14将晶片10按照每个器件12分割成器件芯片之后，实施以下说明的晶片的转移方法。另外，在以下说明的晶片的转移方法的实施方式中，说明已对晶片10实施了上述激光加工的情况。
实施了上述激光加工的晶片10如上述那样定位于具有收纳晶片10的开口部F1a的第一框架F1的开口部F1a中，晶片10的一个面(正面10a)与第一框架F1一起压接于第一带T1。对此，如图4所示，准备将第二带T2压接于具有比第一框架F1的开口部F1a的内径小的外径的第二框架F2而得的框架组。另外，该第二框架F2具有能够收纳上述晶片10的开口部F2a。
若准备了上述框架组，则使压接有第二带T2的第二框架F2的背面侧朝向上方、使形成有粘接层的正面侧朝向下方，如图4的下部所示那样，将第二框架F2定位于处于第一框架F1与晶片10之间的第一带T1的区域而载置，将第二带T2对晶片10的另一个面即背面10b进行压接(第二带压接工序)。在实施第二带压接工序时，可以使用省略图示的压接辊。如图4所示，在第二框架F2的外周与第一框架F1的开口部F1a之间形成有空间S。
若如上述那样实施了第二带压接工序，则准备图5所示的刀具切割器40。该刀具切割器40具有通过旋转电动机42进行旋转驱动的切削刀具44，该切削刀具44在箭头R2所示的方向上旋转。若准备了该刀具切割器40，则一边使第一框架F1在箭头R3所示的方向上旋转一边将切削刀具44定位于第一框架F1的开口部F1a与第二框架F2的外周之间的空间S而进行切削，形成环状的切削线120，沿着第二框架F2的外周将第一带T1切断(第一带切断工序)。另外，沿着第二框架F2的外周将第一带T1切断的方法不限于此，也可以通过其他方法进行切断。
若如上述那样通过第一带切断工序将第一带T1切断，则如图5的下部所示，将第一框架F1和第一带T1的外周部分去除，将第二框架F2翻转，使残留有压接于晶片10的中央区域的第一带T1朝向上方。并且，为了实施对该第一带T1赋予外部刺激而使压接力降低的压接力降低工序，如图6所示，将紫外线照射单元50定位于第一带T1的上方，从该紫外线照射单元50对第一带T1照射紫外线L。该紫外线L作为外部刺激，使与晶片10压接的第一带T1的压接力降低(压接力降低工序)。
若实施了上述压接力降低工序，则如图7的上部所示，从压接于第二带T2的晶片10的正面10a将压接力降低的第一带T1剥离(剥离工序)。在实施该剥离工序时，如图所示，在第一带T1的外周粘贴剥离用的带T3，将该带T3沿水平方向拉拽而剥离，如图7的下部所示，从晶片10的正面10a去除第一带T1，完成本实施方式的晶片的转移方法。另外，在上述实施方式中，示出了从上方进行作为外部刺激的赋予而实施的紫外线L的照射的例子(图6)，但当在使第一带T1朝向下方的状态下从下方侧赋予外部刺激而使压接力降低并且在朝下的状态下将第一带T1去除时，第一带T1不会附着于第二带T2，是优选的。通过以上，能够不损伤晶片10而将晶片10从第一带T1转移至第二带T2，能够成为使晶片10的一个面即正面10a露出而适合之后的拾取工序的状态。
若如上述那样将晶片10从第一带T1转移至第二带T2而成为使晶片10的一个面即正面10a露出的状态，则对晶片10赋予外力，由此能够以改质层100作为分割的起点将晶片10分割成各个器件芯片，然后实施拾取工序。
另外，在上述实施方式中，在实施了第一带切断工序之后实施压接力降低工序，但本发明不限于此。例如也可以在实施第二带压接工序之前实施压接力降低工序。
另外，在上述实施方式中，通过紫外线的照射赋予了压接力降低工序中的外部刺激，但本发明不限于此，例如可以通过加热或冷却来赋予外部刺激而使第一带T1的压接力降低。该外部刺激的选择根据第一带T1的材质而适当地决定。
另外，在上述实施方式中，说明了在第一带T1的正面和第二带T2的正面上形成有粘接层的情况，但本发明不限于此，作为不具有粘接层的第一带T1、第二带T2，可以使用通过加热而发挥粘接力的聚烯烃系、聚酯系的热压接带。

Claims (3)

1.一种晶片的转移方法，该晶片定位于具有对晶片进行收纳的开口部的第一框架的该开口部中，该转移方法将一个面与该第一框架一起压接于第一带的该晶片转移至压接于第二框架的第二带，其中，
该晶片的转移方法具有如下的工序：
第二带压接工序，将压接于该第二框架的该第二带压接于该晶片的另一个面，其中，该第二框架具有比该第一框架的该开口部的内径小的外径；
第一带切断工序，沿着该第二框架的外周将该第一带切断；
压接力降低工序，对该第一带赋予外部刺激而使压接于该晶片的所述一个面的压接力降低；以及
剥离工序，从压接于该第二带的该晶片的所述一个面剥离该第一带。
2.根据权利要求1所述的晶片的转移方法，其中，
该压接力降低工序在该第二带压接工序之前实施。
3.根据权利要求1或2所述的晶片的转移方法，其中，
该第一带是紫外线硬化型带，对该第一带照射紫外线而实施该压接力降低。
CN202211030583.3A 2021-09-06 2022-08-26 晶片的转移方法 Pending CN115775763A (zh)

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