TW202229648A - 錫或錫合金鍍敷液及使用該鍍敷液之凸塊的形成方法 - Google Patents

錫或錫合金鍍敷液及使用該鍍敷液之凸塊的形成方法 Download PDF

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Publication number
TW202229648A
TW202229648A TW110137342A TW110137342A TW202229648A TW 202229648 A TW202229648 A TW 202229648A TW 110137342 A TW110137342 A TW 110137342A TW 110137342 A TW110137342 A TW 110137342A TW 202229648 A TW202229648 A TW 202229648A
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TW
Taiwan
Prior art keywords
acid
tin
plating solution
plating
bumps
Prior art date
Application number
TW110137342A
Other languages
English (en)
Chinese (zh)
Inventor
康司
Original Assignee
日商三菱綜合材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三菱綜合材料股份有限公司 filed Critical 日商三菱綜合材料股份有限公司
Publication of TW202229648A publication Critical patent/TW202229648A/zh

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1183—Reworking, e.g. shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
TW110137342A 2020-10-13 2021-10-07 錫或錫合金鍍敷液及使用該鍍敷液之凸塊的形成方法 TW202229648A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-172259 2020-10-13
JP2020172259A JP7064178B2 (ja) 2020-10-13 2020-10-13 錫又は錫合金めっき液及び該液を用いたバンプの形成方法

Publications (1)

Publication Number Publication Date
TW202229648A true TW202229648A (zh) 2022-08-01

Family

ID=81208003

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110137342A TW202229648A (zh) 2020-10-13 2021-10-07 錫或錫合金鍍敷液及使用該鍍敷液之凸塊的形成方法

Country Status (4)

Country Link
JP (1) JP7064178B2 (ja)
KR (1) KR20230086636A (ja)
TW (1) TW202229648A (ja)
WO (1) WO2022080191A1 (ja)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2346942C3 (de) * 1973-09-18 1978-10-26 Dr.-Ing. Max Schloetter Gmbh & Co Kg, 7340 Geislingen Schwach saures Glanzzinkbad
JPS59182986A (ja) * 1983-04-01 1984-10-17 Keigo Obata スズ、鉛及びすず−鉛合金メツキ浴
JPH07157889A (ja) * 1993-12-03 1995-06-20 Nippon Steel Corp 耐食性に優れためっき鋼板の製造法
JP3609565B2 (ja) * 1996-12-09 2005-01-12 株式会社大和化成研究所 錫−亜鉛合金めっき浴
US6322686B1 (en) 2000-03-31 2001-11-27 Shipley Company, L.L.C. Tin electrolyte
EP2476779B1 (en) 2011-01-13 2013-03-20 Atotech Deutschland GmbH Immersion tin or tin alloy plating bath with improved removal of cupurous ions
CN103184480A (zh) 2011-12-30 2013-07-03 谢柳芳 一种镀锡溶液添加剂
JP2015193916A (ja) 2014-03-18 2015-11-05 上村工業株式会社 錫または錫合金の電気めっき浴、およびバンプの製造方法

Also Published As

Publication number Publication date
WO2022080191A1 (ja) 2022-04-21
JP2022063889A (ja) 2022-04-25
KR20230086636A (ko) 2023-06-15
JP7064178B2 (ja) 2022-05-10

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