TW202212316A - 用於低間隙底部填充應用之與助熔劑相容的環氧酚系黏著劑組合物 - Google Patents
用於低間隙底部填充應用之與助熔劑相容的環氧酚系黏著劑組合物 Download PDFInfo
- Publication number
- TW202212316A TW202212316A TW110111505A TW110111505A TW202212316A TW 202212316 A TW202212316 A TW 202212316A TW 110111505 A TW110111505 A TW 110111505A TW 110111505 A TW110111505 A TW 110111505A TW 202212316 A TW202212316 A TW 202212316A
- Authority
- TW
- Taiwan
- Prior art keywords
- cycloaliphatic
- flux
- compatible
- adhesive
- epoxy
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 65
- 239000000853 adhesive Substances 0.000 title claims abstract description 26
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 26
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000004593 Epoxy Substances 0.000 claims abstract description 33
- 239000003054 catalyst Substances 0.000 claims abstract description 22
- 150000002989 phenols Chemical class 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 5
- 230000004907 flux Effects 0.000 claims description 35
- 125000002947 alkylene group Chemical group 0.000 claims description 24
- 150000002460 imidazoles Chemical class 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 125000001931 aliphatic group Chemical group 0.000 claims description 16
- -1 DCPD glycidyl ethers Chemical class 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 125000005842 heteroatom Chemical group 0.000 claims description 13
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 239000003607 modifier Substances 0.000 claims description 9
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 150000002148 esters Chemical class 0.000 claims description 8
- 125000004185 ester group Chemical group 0.000 claims description 7
- 125000000623 heterocyclic group Chemical group 0.000 claims description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- 125000004122 cyclic group Chemical group 0.000 claims description 6
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000013008 thixotropic agent Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 125000002619 bicyclic group Chemical group 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 125000002950 monocyclic group Chemical group 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 125000003367 polycyclic group Chemical group 0.000 claims description 4
- 150000005374 primary esters Chemical class 0.000 claims description 4
- 150000008028 secondary esters Chemical group 0.000 claims description 4
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 3
- WOCGGVRGNIEDSZ-UHFFFAOYSA-N 4-[2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical compound C=1C=C(O)C(CC=C)=CC=1C(C)(C)C1=CC=C(O)C(CC=C)=C1 WOCGGVRGNIEDSZ-UHFFFAOYSA-N 0.000 claims description 3
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical compound C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 claims description 3
- 239000002318 adhesion promoter Substances 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 3
- 238000006798 ring closing metathesis reaction Methods 0.000 claims description 3
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 claims description 3
- DEQUKPCANKRTPZ-UHFFFAOYSA-N (2,3-dihydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC(C(=O)C=2C=CC=CC=2)=C1O DEQUKPCANKRTPZ-UHFFFAOYSA-N 0.000 claims description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 2
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 claims description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 2
- VWGKEVWFBOUAND-UHFFFAOYSA-N 4,4'-thiodiphenol Chemical compound C1=CC(O)=CC=C1SC1=CC=C(O)C=C1 VWGKEVWFBOUAND-UHFFFAOYSA-N 0.000 claims description 2
- 229930003836 cresol Natural products 0.000 claims description 2
- 150000002118 epoxides Chemical class 0.000 claims description 2
- 230000032050 esterification Effects 0.000 claims description 2
- 238000005886 esterification reaction Methods 0.000 claims description 2
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 150000004291 polyenes Chemical class 0.000 claims description 2
- 150000003141 primary amines Chemical class 0.000 claims description 2
- 125000001118 alkylidene group Chemical group 0.000 claims 2
- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 125000004429 atom Chemical group 0.000 claims 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 20
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000013007 heat curing Methods 0.000 abstract 1
- 239000000565 sealant Substances 0.000 abstract 1
- 238000009472 formulation Methods 0.000 description 25
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 18
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 18
- 239000008393 encapsulating agent Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000002904 solvent Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 9
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001723 curing Methods 0.000 description 6
- ZFZDWMXUMXACHS-UHFFFAOYSA-N 28132-01-6 Chemical compound C1C2CC(CO)C1C1C2CC(CO)C1 ZFZDWMXUMXACHS-UHFFFAOYSA-N 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000005382 thermal cycling Methods 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 4
- 235000017557 sodium bicarbonate Nutrition 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000000930 thermomechanical effect Effects 0.000 description 3
- QPKNFEVLZVJGBM-UHFFFAOYSA-N 2-aminonaphthalen-1-ol Chemical class C1=CC=CC2=C(O)C(N)=CC=C21 QPKNFEVLZVJGBM-UHFFFAOYSA-N 0.000 description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical class NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 2
- CFFZDZCDUFSOFZ-UHFFFAOYSA-N 3,4-Dihydroxy-phenylacetic acid Chemical compound OC(=O)CC1=CC=C(O)C(O)=C1 CFFZDZCDUFSOFZ-UHFFFAOYSA-N 0.000 description 2
- AYKYXWQEBUNJCN-UHFFFAOYSA-N 3-methylfuran-2,5-dione Chemical compound CC1=CC(=O)OC1=O AYKYXWQEBUNJCN-UHFFFAOYSA-N 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000003943 catecholamines Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000454 talc Substances 0.000 description 2
- 229910052623 talc Inorganic materials 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 1
- PAVNZLVXYJDFNR-UHFFFAOYSA-N 3,3-dimethyloxane-2,6-dione Chemical compound CC1(C)CCC(=O)OC1=O PAVNZLVXYJDFNR-UHFFFAOYSA-N 0.000 description 1
- ACJPFLIEHGFXGP-UHFFFAOYSA-N 3,3-dimethyloxolane-2,5-dione Chemical compound CC1(C)CC(=O)OC1=O ACJPFLIEHGFXGP-UHFFFAOYSA-N 0.000 description 1
- PYSRRFNXTXNWCD-UHFFFAOYSA-N 3-(2-phenylethenyl)furan-2,5-dione Chemical compound O=C1OC(=O)C(C=CC=2C=CC=CC=2)=C1 PYSRRFNXTXNWCD-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- UYCICMIUKYEYEU-ZHACJKMWSA-N 3-[(e)-dodec-2-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCC\C=C\CC1CC(=O)OC1=O UYCICMIUKYEYEU-ZHACJKMWSA-N 0.000 description 1
- RDUXDNVQXJZSPY-UHFFFAOYSA-N 3-methylideneoxane-2,6-dione Chemical class C=C1CCC(=O)OC1=O RDUXDNVQXJZSPY-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- SXFJDZNJHVPHPH-UHFFFAOYSA-N 3-methylpentane-1,5-diol Chemical compound OCCC(C)CCO SXFJDZNJHVPHPH-UHFFFAOYSA-N 0.000 description 1
- DFATXMYLKPCSCX-UHFFFAOYSA-N 3-methylsuccinic anhydride Chemical compound CC1CC(=O)OC1=O DFATXMYLKPCSCX-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- LOYDTBZMMPQJNI-UHFFFAOYSA-N 3a-methyl-5,6-dihydro-4h-2-benzofuran-1,3-dione Chemical compound C1CCC=C2C(=O)OC(=O)C21C LOYDTBZMMPQJNI-UHFFFAOYSA-N 0.000 description 1
- HIJQFTSZBHDYKW-UHFFFAOYSA-N 4,4-dimethyloxane-2,6-dione Chemical class CC1(C)CC(=O)OC(=O)C1 HIJQFTSZBHDYKW-UHFFFAOYSA-N 0.000 description 1
- HXDOZKJGKXYMEW-UHFFFAOYSA-N 4-ethylphenol Chemical compound CCC1=CC=C(O)C=C1 HXDOZKJGKXYMEW-UHFFFAOYSA-N 0.000 description 1
- CCTOEAMRIIXGDJ-UHFFFAOYSA-N 4-hydroxy-2-benzofuran-1,3-dione Chemical class OC1=CC=CC2=C1C(=O)OC2=O CCTOEAMRIIXGDJ-UHFFFAOYSA-N 0.000 description 1
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 1
- MGICRVTUCPFQQZ-UHFFFAOYSA-N 4-methyloxane-2,6-dione Chemical compound CC1CC(=O)OC(=O)C1 MGICRVTUCPFQQZ-UHFFFAOYSA-N 0.000 description 1
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 description 1
- LQOPXMZSGSTGMF-UHFFFAOYSA-N 6004-79-1 Chemical compound C1CC2C3C(=O)OC(=O)C3C1C2 LQOPXMZSGSTGMF-UHFFFAOYSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UHFFFAOYSA-N 826-62-0 Chemical compound C1C2C3C(=O)OC(=O)C3C1C=C2 KNDQHSIWLOJIGP-UHFFFAOYSA-N 0.000 description 1
- ZGTSBGFPDYCMDU-UHFFFAOYSA-N C(C1CO1)C(CC[Si](OC)(OC)OC)OCC(O)CO Chemical compound C(C1CO1)C(CC[Si](OC)(OC)OC)OCC(O)CO ZGTSBGFPDYCMDU-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920000147 Styrene maleic anhydride Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical group C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001409 amidines Chemical class 0.000 description 1
- 125000004202 aminomethyl group Chemical group [H]N([H])C([H])([H])* 0.000 description 1
- 150000003974 aralkylamines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- OZEHOHQZIRILDX-UHFFFAOYSA-N ctk1b7797 Chemical compound O=C1OC(=O)C2C1C1(C)CC2CC1 OZEHOHQZIRILDX-UHFFFAOYSA-N 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000000539 dimer Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- VANNPISTIUFMLH-UHFFFAOYSA-N glutaric anhydride Chemical compound O=C1CCCC(=O)O1 VANNPISTIUFMLH-UHFFFAOYSA-N 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- KNRCVAANTQNTPT-UHFFFAOYSA-N methyl-5-norbornene-2,3-dicarboxylic anhydride Chemical compound O=C1OC(=O)C2C1C1(C)C=CC2C1 KNRCVAANTQNTPT-UHFFFAOYSA-N 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000753 refractory alloy Inorganic materials 0.000 description 1
- 239000006254 rheological additive Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
- C09J163/10—Epoxy resins modified by unsaturated compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/66—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety
- C07C69/73—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids
- C07C69/732—Esters of carboxylic acids having esterified carboxylic groups bound to acyclic carbon atoms and having any of the groups OH, O—metal, —CHO, keto, ether, acyloxy, groups, groups, or in the acid moiety of unsaturated acids of unsaturated hydroxy carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
- C07C69/84—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5046—Amines heterocyclic
- C08G59/5053—Amines heterocyclic containing only nitrogen as a heteroatom
- C08G59/5073—Amines heterocyclic containing only nitrogen as a heteroatom having two nitrogen atoms in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
- H01L2224/81011—Chemical cleaning, e.g. etching, flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
- H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
本發明提供可用作低間隙底部填充之與助熔劑相容的環氧酚黏著劑組合物及可用於其中之新穎酚類。該等與助熔劑相容的環氧酚黏著劑組合物包括環氧組分,其包括具有環脂肪族、脂環族或混合環脂肪族-芳香族主鏈之環氧化合物;多官能酚系組分及觸媒。該等與助熔劑相容的組合物可用作底部填充密封劑,其(1) 快速填充諸如倒裝晶片總成之半導體裝置中之底部填充空間,(2) 使該裝置能夠藉由短時間熱固化牢固地連接至電路板且具有良好生產力,及(3) 展現優良抗焊料回流性。
Description
本發明係關於用於低間隙底部填充應用之與助熔劑相容環氧酚系黏著劑組合物及可用於其中之新穎酚類。
提供以下討論僅用以幫助讀者理解本揭示內容,且不允許描述或構成現有技術。
近年來,小型電子用具之流行使得半導體裝置之期望大小縮小。因此,晶片封裝之大小正實質上縮小至裸晶粒本身之大小。使新的封裝設計具有更多功能、更精細間距、低間隙、更薄封裝以及擴展的下游市場之趨勢不僅帶來更高可靠性要求,而且亦產生前幾代底部填充技術不存在之許多新挑戰。
將積體電路附接至有機基板板之倒裝晶片方法使用積體電路上之一系列金屬焊料凸塊,該等凸塊與板上之金屬結合位點形成互連。積體電路之作用側翻轉倒置以使積體電路上之凸塊與基板上之金屬結合位點接觸。使用有機焊接助熔劑以去除金屬氧化物並在總成在高於焊料之熔融溫度下加熱時促進焊料之潤濕。將積體電路附接至基板之此製程稱為回流焊接。助熔劑之目的係清潔金屬之表面以改良電連接。焊料或低熔點合金可包含基板上之金屬結合位點、積體電路上之凸塊或二者,此取決於所選之材料。高熔點合金亦可同樣存在於無鉛焊料中。類似地,主要出於對環境之關注,高熔點合金可存在於無鉛焊料中。
利用小間隙底部填充,助熔劑之殘餘物難以自窄間隙去除。因此,在焊料回流製程之後不自板去除助熔劑殘餘物之免清潔助熔劑係用於大多數倒裝晶片應用之助熔劑選擇。該等免清潔助熔劑可在晶片佈置之前分配至板上之金屬結合位點。為在回流製程之前維持晶片與板之對準,可將黏性助熔劑施加至晶片上之凸塊。將含有焊料凸塊之積體電路浸於助熔劑中達設定深度以將期望量之黏性助熔劑僅施加至凸塊之表面。然後將晶片對準並放置於基板上,以使得助熔劑塗佈之凸塊接觸基板上之適當金屬結合位點。黏性助熔劑經調配以獲得較高固體含量,此有助於在回流之前將晶片黏著至基板。因此,黏性助熔劑充當臨時膠水,以在將總成置於回流爐期間保持晶片之適當對準。常用黏性助熔劑係免清潔表面安裝製程中所用之焊料膏助熔劑媒劑。
儘管免清潔焊料膏助熔劑媒劑之調配物有所變化,但典型組合物含有50%松香、40%溶劑、5-8%增稠劑及2-5%助熔劑活化劑(例如,有機酸及胺)。儘管助熔劑之大多數溶劑在回流製程期間蒸發掉,但留下松香酯及焊料膏成分之其他非揮發性殘餘物。
在焊料回流以將積體電路附接至基板之後,倒裝晶片總成中之積體電路與有機基板之間之間隙藉由毛細管作用利用底部填充囊封劑或黏著劑進行填充。囊封劑之目的係減輕焊料互連上之熱機械應力,該等熱機械應力係由矽積體晶片(熱膨脹係數(CTE) = 2.5 ppm/℃)與有機基板(CTE = 15-20 ppm/℃)之間之熱膨脹係數差異引起。
倒裝晶片總成中所用之典型底部填充囊封劑係由環氧樹脂、固化劑及無機填充劑組成以在固化時獲得交聯熱固性聚合物。固化聚合物之性質(例如,CTE及彈性模數)有助於在使用期間減輕焊料接點上之熱機械應力,該熱機械應力係藉由熱循環測試進行測試。典型熱循環測試涉及在-55℃及125℃下倒裝晶片總成對兩種不同液體之重複暴露,其中在每一溫度下具有10分鐘停留時間。因此,底部填充囊封劑之總體目的係藉由減輕焊料接點上之熱機械應力增強倒裝晶片總成之操作壽命及可靠性。
若干製程及材料性質特徵決定底部填充囊封劑之材料選擇。首先,環氧底部填充囊封劑應在生產期間在晶片下快速流動。囊封劑之黏度、表面張力及粒徑分佈可經最佳化以在囊封步驟期間達成晶片下之高效流動。為進一步減少底部填充時間,基板可經加熱以降低未固化囊封劑之黏度並增強材料之流動速度。通常在分配囊封劑之前將基板板表面加熱至70℃,以達成此效應。其次,環氧底部填充囊封劑應相對較快地固化。典型底部填充囊封劑係經設計以在130-170℃之溫度下固化(即,形成不可逆地交聯結構)之環氧調配物。最後,環氧底部填充囊封劑應在熱循環測試期間牢固地黏附至晶片及基板二者。若環氧自晶片或基板表面脫落或分層,則將不能達成互連上之適當應力緩解。
免清潔助熔劑殘餘物與環氧底部填充囊封劑之間之相互作用對於達成最大黏著及期望倒裝晶片可靠性甚為重要。作為黏性助熔劑用於倒裝晶片製程之典型焊料膏助熔劑組合物含有松香或類似樹脂。在將積體電路回流焊接至基板之後,松香之殘餘物及助熔劑之非揮發性有機成分留在基板上。儘管該等免清潔殘餘物就其腐蝕性而言對總成係良好的,但已知該等殘餘物造成空洞及焊料擠壓,此不利地影響裝置之黏著及電完整性。此結果可由於底部填充囊封劑之差黏著而導致晶片表面之早期分層。囊封劑自晶片之此脫層可使用掃描聲學顯微鏡(SAM)檢測及量測,此允許檢測晶片表面與環氧底部填充之間空隙之存在。
因此,助熔劑與底部填充囊封劑之相容性係底流製程性能之重要準則。
在經受重複焊料回流條件時顯示穩定Tg且具有低吸濕性之與助熔劑相容的底部填充黏著劑將係高度期望的。維持穩定Tg對於在較高溫度下之良好黏著甚為重要。
本揭示內容提供可用作底部填充密封劑之與助熔劑相容的組合物,其(1) 快速填充半導體裝置(例如,倒裝晶片總成)中之底部填充空間,(2) 使裝置能夠藉由短時間熱固化牢固地連接至電路板且具有良好生產力,及(3) 展現優良熱循環性質。組合物包含環氧樹脂組分、酚系組分及觸媒。本揭示內容亦提供可用於組合物中之新穎酚類。
使用本揭示內容之組合物,半導體裝置(例如,倒裝晶片總成)可(1) 由於經改良之固化速度及延長之可用工作壽命而快速組裝且沒有生產線停機時間,以及(2)藉由組合物之短時間熱固化牢固地連接至電路板,其中所得安裝結構展現優良熱衝擊性質或熱循環性質。
因此,本揭示內容提供通常用於低間隙底部填充應用之與助熔劑相容的環氧酚黏著劑組合物。組合物包括:
環氧組分,其包含具有環脂肪族、脂環族或混合環脂肪族-芳香族、脂環族-芳香族主鏈之環氧化合物;
酚系組分,例如,多官能酚;及
觸媒。
環氧組分可為具有環脂肪族、脂環族、混合環脂肪族-芳香族或脂環族-芳香族主鏈之環氧化合物。
酚系組分可係例如由一般結構I、II、III及/或IV代表之多官能酚:
其中X係單環、二環或多環結構,其為視情況具有脂肪族側鏈之環脂肪族、脂環族或混合環脂肪族-芳香族,且酯基團之氧可直接連接至環或脂肪族側鏈;
X
1係視情況包含雜原子O或S之伸烷基或具支鏈伸烷基;
R
3係H、烷基或環烷基;
L
1及L
2獨立地選自共價鍵、視情況包含雜原子O或S之伸烷基、具支鏈伸烷基及伸環烷基;
R
1及R
2係H、甲基或OH,前提條件係在每一環中R
1或R
2中之至少一者係OH;且
結構I、II、III及IV中存在之酯基團可為一級或二級酯基團。
或者,酚組分可選自結構V、VI及/或VII:
其中R係脂肪族、環脂肪族、脂環族、混合芳香族-環脂肪族或聚合物主鏈;另外,在結構V及VII中,R可為稠合環;
R
1及R
2係H、烷基或OH,前提條件係R
1或R
2中之至少一者係OH;
L選自共價鍵、視情況具有雜原子O或S之伸烷基、伸環烷基及具支鏈伸烷基;L亦可含有酯或碳酸酯鍵聯;
n=1-10;且
連接至結構V中之酚環的稠合環係可選的且在存在時可為芳香族、環脂肪族、脂環族或雜環。
觸媒可選自咪唑、經取代咪唑、潛在性咪唑、經囊封咪唑、酚官能化咪唑及萘酚官能化咪唑、以及脒及胍型觸媒或酚官能化咪唑觸媒。
本揭示內容之益處及優點自以下實施方式將變得更顯而易見。
如所提及,本揭示內容提供可用於低間隙底部填充應用之與助熔劑相容的環氧酚黏著劑組合物。組合物寬泛地包含環氧組分、酚系組分及觸媒。
環氧組分可選自具有環脂肪族、脂環族、混合環脂肪族-芳香族或混合脂環族-芳香族主鏈之環氧化合物。
特別有用之環氧樹脂係下文式中所示之EP4088S、Eponex1510、HP7200、Hyloxy改質劑107及其混合物,但亦可使用具有環脂肪族、混合環脂肪族-芳香族主鏈及/或芳香族主鏈之其他樹脂。實例包括由Sugai Chemical Industry共用之單官能及雙官能十氫萘縮水甘油基醚、基於環脂肪族主鏈(例如,金剛烷環結構)之單及多官能縮水甘油基醚,包括單及多官能十氫萘縮水甘油基醚、單及多官能DCPD縮水甘油基醚、氫化雙酚A之二縮水甘油醚、單及多官能金剛烷基縮水甘油基醚、環脂肪族縮水甘油基酯、環狀單烯及多烯之單及多官能環氧化物及其混合物。
該等多官能酚類(即,酚類1-4)係新穎的且形成本揭示內容之另一態樣。
除以上新穎酚類以外,可使用某些已知脂環族酚類作為組合物之酚系組分。適宜酚類係由DIC International Chemicals以商標名Phenolite
TM酚清漆型酚醛樹脂出售。尤其適宜之已知酚類係DCPD酚醛清漆及甲酚酚醛清漆。亦有用者係雙酚A清漆型酚醛樹脂、苯酚清漆型酚醛樹脂、三嗪清漆型酚醛樹脂、二烯丙基雙酚A、二羥基萘(所有異構物)、2-烯丙基苯基清漆型酚醛樹脂、二羥基二苯甲酮(所有異構物)、三羥基二苯甲酮(所有異構物)、Rezicure 3000、雙(4-羥基苯基)硫醚及雙(4-羥基苯基)碸。
酚系組分亦可為由一般結構I、II、III及/或IV代表之多官能酚:
其中X係單環、二環或多環結構,其為視情況具有脂肪族側鏈之環脂肪族或脂環族;且酯基團之氧直接連接至該環或側鏈;
X
1係視情況包含雜原子O或S之伸烷基或具支鏈伸烷基;
R
3係H、烷基或環烷基;
L
1及L
2獨立地選自共價鍵、視情況包含雜原子O或S之伸烷基、具支鏈伸烷基及伸環烷基;
R
1及R
2獨立地係H、甲基或OH,前提條件係在每一環中R
1或R
2中之至少一者係OH;且
結構I、II、III及IV中存在之酯官能性可為一級或二級酯基團。
與助熔劑相容的環氧酚黏著劑化合物中所用之酚可選自結構V、VI及/或VII之化合物:
其中R係脂肪族、環脂肪族、脂環族、混合芳香族-環脂肪族或聚合物主鏈;另外,在結構V及VII中,R可為稠合環;
R
1及R
2係H、烷基或OH,前提條件係R
1或R
2中之至少一者係OH;
L選自共價鍵、視情況具有雜原子O或S之伸烷基、伸環烷基及具支鏈伸烷基;L亦可含有酯或碳酸酯鍵聯;
n=1-10;且
連接至結構V中之酚環的稠合環係可選的且在存在時可為芳香族、環脂肪族、脂環族或雜環。
以上醯亞胺或鄰苯二甲醯亞胺官能酚類可藉由脂肪族、脂環族、芳香族、芳烷基胺利用單或多官能酸酐亞胺化來獲得。酸酐可選自甲基六氫鄰苯二甲酸酐、納迪克酸酐(nadic anhydride)(甲基-5-降莰烯-2,3-二甲酸酐;「MNA」)或5-降莰烯-2,3-二甲酸酐、六氫-4-甲基鄰苯二甲酸酐(MHHPA)、甲基四氫鄰苯二甲酸酐(MTHPA)、甲基環己烯-1,2-二甲酸酐、甲基二環[2.2.1]庚烷-2,3-二甲酸酐、二環[2.2.1]庚烷-2,3-二甲酸酐、(2-十二烯-1-基)琥珀酸酐、戊二酸酐、檸康酸酐、甲基琥珀酸酐、2,2-二甲基琥珀酸酐、2,2-二甲基戊二酸酐、3-甲基戊二酸酐、3,3-四亞甲基戊二酸酐、3,3-二甲基戊二酸酐、羥基鄰苯二甲酸酐之若干異構物或其混合物。
可用於亞胺化反應之多官能酸酐包括聚丙烯-接枝-馬來酸酐、聚乙烯-接枝-馬來酸酐、丁二烯-馬來酸酐共聚物、苯乙烯-馬來酸酐共聚物及其他共聚物及馬來酸酐、衣康酸酐及檸康酸酐之三元共聚物。
可用於亞胺化反應之胺及胺官能酚類包括(但不限於)胺基酚之若干異構物、兒茶酚胺、胺基萘酚、二聚體二胺、TCD-二胺(3(4),8(9)-雙(胺基甲基)-三環癸烷)、環己胺、脂肪族、環脂肪族及脂環族一級二胺。
環氧酚黏著劑組合物可進一步包含馬來醯亞胺樹脂,其可為雙馬來醯亞胺、多官能馬來醯亞胺或下文表示之結構VIII及IX之酚官能馬來醯亞胺。
其中L選自共價鍵、視情況具有雜原子O或S之伸烷基、伸環烷基及具支鏈伸烷基;L亦可含有酯或碳酸酯鍵聯;且
結構VIII中之稠合環係可選的且當存在時其係芳香族、環脂肪族、脂環族或雜環。
馬來醯亞胺樹脂可藉由單或多官能一級胺與馬來酸酐之亞胺化反應獲得或可藉由單或多官能脂肪族、環脂肪族、脂環族或芳烷基醇與6-馬來醯亞胺基己酸之費歇爾酯化(Fisher esterification)獲得。酚官能馬來醯亞胺亦可藉由胺基酚類之若干異構物、胺基萘酚類、兒茶酚胺或側鏈胺官能酚類與馬來酸酐之亞胺化反應獲得。
可使用各種觸媒,其中包括咪唑、經取代咪唑、潛在性咪唑、經囊封咪唑、酚官能化咪唑及萘酚官能化咪唑。已發現咪唑觸媒Technicure EMI-24CN係特別期望之固化劑。例如,在4%濃度下,具有此觸媒之環氧酚黏著劑組合物顯示Tg與其他性能性質之優良平衡。可使用自Evonik Corporation獲得以商標名Curezol出售之潛在性咪唑、來自A&C catalysts之經囊封咪唑及酚或萘酚官能化咪唑(例如,Aradur 3123)。較佳觸媒包括Technicure EMI 24-CN、Curezol 2-PHZ-S、Curezol 2-PZ、Curezol 2PZ-吖嗪、Aardur 3123及胺及多胺官能咪唑。
環氧組分對酚系組分之比率可為1:1至1:0.05。該比率較佳為1: 0.2,且更佳1: 0.1。環氧組分及酚系組分之組合通常構成黏著劑組合物之約50%,其餘者係選自固化劑、加速劑、觸媒、流動改質劑、填充劑、黏著促進劑及觸變劑。
在某些實施例中,黏著劑組合物可進一步包含一或多種流動添加劑、黏著促進劑、導電性添加劑、流變改質劑或諸如此類,以及其任兩種或更多種之混合物。視需要,組合物中可含有各種添加劑,例如有機或無機填充劑、觸變劑、矽烷偶合劑、稀釋劑、改質劑、著色劑(例如,顏料及染料)、表面活性劑、防腐劑、穩定劑、塑化劑、潤滑劑、消泡劑、整平劑及諸如此類;然而,並不限於該等。具體而言,組合物較佳包含選自由有機或無機填充劑、觸變劑及矽烷偶合劑組成之群之添加劑。該等添加劑可以總組合物之約0.1重量%至約50重量%、更佳總組合物之約2重量%至約10重量%之量存在。
觸變劑可包括(但不限於)滑石、發煙二氧化矽、經表面處理之超細碳酸鈣、氧化鋁細粒、片狀氧化鋁;層狀化合物(例如蒙脫石)、針狀化合物(例如硼酸鋁晶須)及諸如此類。在該等中,滑石、發煙二氧化矽及細氧化鋁係特別期望的。該等試劑可以重量計以總組合物之約1%至約50%、更佳約1%至約30%之量存在。
矽烷偶合劑可包括(但不限於) γ-胺基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷及諸如此類。
如本文所用,「流動添加劑」係指矽聚合物、丙烯酸乙酯/丙烯酸2-乙基己基酯共聚物、酮肟磷酸酯之烷醇銨鹽及諸如此類,以及其組合。該等添加劑中之一些係自商業來源(例如,BYK及Evonik Corporation)購得。
本揭示內容提供以下非限制性及非詳盡性實例。
實例
在酚環氧調配物中篩選若干咪唑觸媒,如表1中所示。所測試之一些調配物顯示當使用適宜咪唑加速劑時具有較高Tg。液體咪唑觸媒(Technicure EMI-24CN)似乎在降低固化溫度方面表現最佳。此觸媒之低黏度係額外優點。
表 1 :
酚固化環氧系統之初始調配物篩選
調配物 | 組分 | DSC 峰值溫度 | Tg |
F1 | BPF DGE、1,1,1(參羥基苯基)乙烷、curezol 2PZ (6%) | 125℃ | 132℃ |
F2 | BPF DGE、1,1,1(參羥基苯基)乙烷、1-(2-氰基乙基)-2-苯基咪唑(Technicure EMI-24CN) (5%) | 125℃ | 115℃ |
F3 | 830CRP、GY 9820、1,1,1(參羥基苯基)乙烷、curezol 2PHZ-S (5%) | 160℃ | 138℃ |
F4 | 830CRP、GY 9820、1,1,1(參羥基苯基)乙烷、curezol 2PZ (5%) | 130℃ | 126℃ |
F5 | 830CRP、GY 9820、1,1,1(參羥基苯基)乙烷、curezol 2PZ吖嗪(5%) | 130℃ | 143℃ |
已發現,具有環脂肪族主鏈之環氧樹脂顯示良好的助熔劑相容性。以純淨形式針對助熔劑相容性進行篩選之一些環氧樹脂包括EP4088S、Eponex1510、HP7200L、Hyloxy改質劑107及上述之混合物。所有該等環氧樹脂均具有環脂肪族或混合環脂肪族-芳香族主鏈。助熔劑相容性研究係使用含有約5%助熔劑之環氧樹脂並將混合物加熱至約80℃達約30分鐘並將混合物高速混合來實施。將其冷卻至室溫並儲存後,其產生澄清混合物而無任何混濁。
在配備有熱電偶、機械攪拌器及冷凝器之1L 3頸燒瓶中放置於甲苯600mL中之4,8-雙(羥基甲基)三環[5.2.1.0
2,6]癸烷(49.2g, 250mmol)、雙酚酸(143.5g, 500mmol)、PTSA (3g, 1.5%)。將混合物與水共沸蒸餾攪拌12h。冷卻至環境溫度後,將甲苯傾倒出並將剩餘固體溶解於1 L乙酸乙酯中。將溶液用水洗滌一次,用碳酸氫鈉水溶液洗滌兩次並用水洗滌一次。溶液經無水Na
2SO
4乾燥後,使用旋轉蒸發器在減壓下蒸發溶劑。在高真空下在80℃下若干小時以去除最後痕量之溶劑,以獲得呈紫色固體之酚1 (152g, 83%)。
實例 2 :四官能酚 2 之合成
在配備有熱電偶、機械攪拌器及冷凝器之1L 3頸燒瓶中放置於甲苯400mL中之3-甲基-1,5-戊二醇(8.94g, 75mmol)、雙酚酸(43.11g, 150mmol)、PTSA (1.1g, 2.2%)。將混合物與水共沸蒸餾攪拌12h。冷卻至環境溫度後,將甲苯傾倒出並將所得固體溶解於600 mL乙酸乙酯中。將溶液用水洗滌一次,用碳酸氫鈉水溶液洗滌兩次並用水洗滌一次。溶液經無水Na
2SO
4乾燥後,使用旋轉蒸發器在減壓下蒸發溶劑。在高真空下在80℃下若干小時以去除最後痕量之溶劑,以獲得呈紫色固體之酚2 (38g, 88%)。
實例 3 :雙官能酚 3 之合成
在配備有熱電偶、機械攪拌器及冷凝器之1L 3頸燒瓶中放置於甲苯600mL中之4,8-雙(羥基甲基)三環[5.2.1.0
2,6]癸烷(54.4g, 277mmol)、4-羥基苯甲酸(76.55g, 554mmol)、PTSA (2.6g, 2%)。將混合物與水共沸蒸餾攪拌12h。冷卻至環境溫度後,將甲苯傾倒出並將所得固體溶解於1 L乙酸乙酯中。溶液用水洗滌一次,用碳酸氫鈉水溶液洗滌兩次並用水洗滌一次。溶液經無水Na
2SO
4乾燥後,使用旋轉蒸發器在減壓下蒸發溶劑。在高真空下在80℃下若干小時以去除最後痕量之溶劑,以獲得呈紫色固體之酚3 (95g, 77%)。
實例 4 :四官能酚 4 之合成
在配備有熱電偶、機械攪拌器及冷凝器之1L 3頸燒瓶中放置於甲苯600mL中之4,8-雙(羥基甲基)三環[5.2.1.0
2,6]癸烷(35g, 177mmol)、3,4-二羥基苯基乙酸(59.96g,356 mmol)、PTSA (1.9g, 2%)。將混合物與水共沸蒸餾攪拌48h。冷卻至環境溫度後,將甲苯傾倒出並將剩餘固體溶解於1 L乙酸乙酯中。將溶液用水洗滌一次,用碳酸氫鈉水溶液洗滌兩次並用水洗滌一次。溶液經無水Na
2SO
4乾燥後,使用旋轉蒸發器在減壓下蒸發溶劑。在高真空下在80℃下若干小時以去除最後痕量之溶劑以獲得呈褐色固體之酚4 (79g, 82%)。
製作若干未填充環氧酚調配物並進行篩選,如下表2所示。
表 2 :
未填充環氧酚系調配物
調配物 | 1 183C (g) | 2 180C (g) | 3 180D (g) | 4 178B (g) | 5 178F (g) | 6 178D (g) |
EPN 9820 | 5.73 | 5.44 | 3.28 | 2.66 | 1.68 | |
EP4088S | 3.73 | 1.99 | 1.89 | 3.28 | 3.04 | 1.93 |
BPA DGE | 3.14 | 2.98 | ||||
HP7200L | 2.32 | |||||
MY 0510 | 5.13 | 3.24 | 7.56 | 5.48 | 3.46 | |
Hyloxy改質劑107 | 1.47 | |||||
o,o’-二烯丙基雙酚A | 1.414 | 0.56 | 0.707 | |||
TD2131 | 1.13 | 2.0 | 1.9 | |||
實例1之酚 1 | 0.56 | |||||
Technicure EMI-24CN | 0.492 | 0.57 | 0.62 | 0.62 | 0.49 | 0.311 |
DSC峰值溫度(℃) | 140℃ | 138℃ | NA | 136℃ | 137℃ | 140℃ |
Tg (℃) | 154℃ | 115℃ | 155℃ | 150℃ | 144℃ | 134℃ |
上表2顯示若干環氧酚系未填充調配物及其固化及Tg概況。咪唑觸媒之量在所有該等調配物中保持恆定在4 wt%。發現使用Hyloxy改質劑107有益於降低黏度。然而,此環脂肪族環氧不利地影響Tg。使用四官能酚1與使用二烯丙基雙酚A之調配物相比似乎顯著增加Tg (表2中之調配物5對6)。
由於環脂肪族環氧樹脂以純淨形式顯示良好助熔劑相容性,因此將若干經填充調配物與其他環氧樹脂摻和以獲得Tg、黏度與助熔劑相容性之平衡。開發至少部分地含有具有環脂肪族主鏈之環氧樹脂之若干環氧酚系調配物以改良助熔劑相容性。與未填充調配物相比,當使用二氧化矽作為填充劑時,經填充調配物與等效的未填充調配物相比顯示Tg顯著降低。為獲得在120-140℃範圍內之Tg,可藉由添加具有環脂肪族-脂肪族主鏈之多官能酚類對調配物進行改質,以製得表3中所示之調配物。
表 3 :
使用與助熔劑相容的環氧樹脂之環氧酚系經填充調配物
調配物 | 1(g) 178D | 2(g) 178F | 3(g) 180D | 4(g) 180E | 5(g) 183C | 6(g) 183D |
EPN 9820 | 10.06 | 10.04 | 16.21 | 12.95 | ||
EP4088S | 11.313 | 11.30 | 5.63 | 4.49 | 13.97 | 11.98 |
BPA DGE | 8.89 | 7.1 | ||||
HP7200L | 8.68 | 7.45 | ||||
MY0510 | 20.531 | 20.51 | 9.662 | 17.0 | 19.24 | 23.065 |
四官能酚1 | 2.13 | |||||
酚-酚醛清漆TD2131 | 5.72 | 4.57 | 4.24 | 3.62 | ||
O,O’-二烯丙基雙酚A | 4.23 | 2.13 | ||||
Technicure EMI-24CN | 1.86 | 1.87 | 1.85 | 1.85 | 1.85 | 1.85 |
SE2050二氧化矽 | 50.0 | 50.0 | 49.975 | 49.975 | 49.975 | 49.975 |
KD1 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 | 1.0 |
W9010 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.50 |
Z6040 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.50 |
PC1344 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 | 0.05 |
總計 | 100.0 | 100.0 | 100.0 | 100.0 | 100.0 | 100.0 |
表3之若干經填充調配物之Tg及黏度概況顯示於表4中。環氧酚系化學之一個顯著特徵係,即使DSC峰值溫度較低,在第二次DSC Tg上升後亦觀察到Tg之增加。此結果可能來自在第二次加熱期間之額外交聯。當裝置經受多個焊料回流條件時,增加之Tg可有益於裝置之可靠性。
表 4 :
原型調配物之固化概況、黏度及 Tg
調配物 | DSC 峰值固化溫度 ( ℃ ) | 在 20 s -1 下之黏度 (cP) | 25-260 ℃ DSC 斜升後之第一 Tg | 25-260 ℃之第二次斜升後之第二 Tg |
w/o 助熔劑 | 0 hr | |||
1 | 160 | 3169 | 99 | 119 |
2 | 150 | 7377 | 113 | 128 |
3 | 139 | 48902 | 123 | 127 |
4 | 137 | 23291 | 141 | 143 |
5 | 138 | 16441 | 120 | 132 |
6 | 138 | 10972 | 126 | 143 |
Claims (17)
- 一種用於低間隙底部填充應用之與助熔劑相容的環氧酚黏著劑,其包含: 環氧組分,其包含具有環脂肪族、脂環族或混合環脂肪族-芳香族、脂環族-芳香族主鏈之環氧化合物; 多官能酚系組分;及 觸媒。
- 如請求項1之與助熔劑相容的環氧酚黏著劑,其中該環氧化合物係選自EP4088S、Eponex1510、HP7200L、Hyloxy改質劑107、單及多官能十氫萘縮水甘油基醚、單及多官能DCPD縮水甘油基醚、氫化雙酚A之二縮水甘油醚、單及多官能金剛烷基縮水甘油基醚、環脂肪族縮水甘油基酯、衍生自環脂肪族單胺及二胺之縮水甘油基化合物、環狀單烯及多烯之單及多官能環氧化物及其混合物。
- 如請求項1之與助熔劑相容的環氧酚黏著劑,其中該觸媒係選自咪唑、經取代咪唑、潛在性咪唑、經囊封咪唑、酚官能化咪唑及萘酚官能化咪唑。
- 如請求項3之與助熔劑相容的環氧酚黏著劑,其中該觸媒係選自Technicure EMI 24-CN、Curezol 2-PHZ-S、Curezol 2-PZ、Curezol 2PZ-吖嗪、Aardur 3123、Ajicure系列、Technicure系列、Resicure系列、Technirez系列及胺及多胺官能咪唑。
- 如請求項1之與助熔劑相容的環氧酚黏著劑,其進一步包含馬來醯亞胺樹脂。
- 如請求項9之與助熔劑相容的環氧酚黏著劑,其中該雙馬來醯亞胺或多官能馬來醯亞胺係藉由單或多官能一級胺利用馬來酸酐亞胺化獲得或藉由單或多官能脂肪族、環脂肪族、脂環族或芳烷基醇利用6-馬來醯亞胺基己酸費歇爾酯化(Fisher esterification)來獲得。
- 如請求項1之與助熔劑相容的環氧酚黏著劑,其中該環氧樹脂對該酚之比率係1:1至1:0.05。
- 如請求項1之與助熔劑相容的環氧酚黏著劑,其進一步包含固化劑、加速劑、觸媒、流動改質劑、填充劑、黏著促進劑及觸變劑。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023560528A JP2024515506A (ja) | 2020-06-01 | 2021-08-09 | 低ギャップアンダーフィル用途向けのフラックス親和性エポキシ-フェノール接着剤組成物 |
KR1020237033261A KR20230164059A (ko) | 2020-06-01 | 2021-08-09 | 저 갭 언더필 적용을 위한 플럭스-상용성 에폭시-페놀계 접착제 조성물 |
PCT/US2021/045140 WO2022211838A1 (en) | 2020-06-01 | 2021-08-09 | Flux-compatible epoxy-phenolic adhesive compositions for low gap underfill applications |
US18/372,206 US20240010890A1 (en) | 2020-06-01 | 2023-09-25 | Flux-compatible epoxy-phenolic adhesive compositions for low gap underfill applications |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063032764P | 2020-06-01 | 2020-06-01 | |
US63/032,764 | 2020-06-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202212316A true TW202212316A (zh) | 2022-04-01 |
Family
ID=82197310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110111505A TW202212316A (zh) | 2020-06-01 | 2021-03-30 | 用於低間隙底部填充應用之與助熔劑相容的環氧酚系黏著劑組合物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20240010890A1 (zh) |
JP (1) | JP2024515506A (zh) |
KR (1) | KR20230164059A (zh) |
CN (1) | CN117062890A (zh) |
TW (1) | TW202212316A (zh) |
WO (1) | WO2022211838A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7401016B1 (ja) * | 2023-05-15 | 2023-12-19 | 東洋インキScホールディングス株式会社 | 封止シート及び、樹脂組成物層を有するディスプレイ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62270618A (ja) * | 1986-05-19 | 1987-11-25 | Nippon Telegr & Teleph Corp <Ntt> | エポキシ樹脂組成物 |
JP4870265B2 (ja) * | 2001-01-19 | 2012-02-08 | 帝人化成株式会社 | ポリカーボネート樹脂 |
KR101906687B1 (ko) * | 2010-03-08 | 2018-12-05 | 아지노모토 가부시키가이샤 | 트렌치형 회로 기판의 제조방법 |
EP3263664B1 (en) * | 2010-04-16 | 2020-11-04 | Swimc Llc | Coating compositions for packaging articles and methods of coating |
KR102405074B1 (ko) * | 2016-12-20 | 2022-06-07 | 디아이씨 가부시끼가이샤 | 조성물, 경화물 및 적층체 |
-
2021
- 2021-03-30 TW TW110111505A patent/TW202212316A/zh unknown
- 2021-08-09 WO PCT/US2021/045140 patent/WO2022211838A1/en active Application Filing
- 2021-08-09 CN CN202180096089.4A patent/CN117062890A/zh active Pending
- 2021-08-09 KR KR1020237033261A patent/KR20230164059A/ko active Search and Examination
- 2021-08-09 JP JP2023560528A patent/JP2024515506A/ja active Pending
-
2023
- 2023-09-25 US US18/372,206 patent/US20240010890A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2022211838A1 (en) | 2022-10-06 |
JP2024515506A (ja) | 2024-04-10 |
KR20230164059A (ko) | 2023-12-01 |
US20240010890A1 (en) | 2024-01-11 |
CN117062890A (zh) | 2023-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI229694B (en) | Dual cure B-stageable adhesive for die attach | |
TWI598372B (zh) | Adhesive composition | |
JP6340762B2 (ja) | アンダーフィル材を用いた電子部品装置の製造方法、アンダーフィル材、及び電子部品装置 | |
TWI818911B (zh) | 半導體用接著劑、半導體裝置的製造方法及半導體裝置 | |
JP2005532678A (ja) | 層間誘電体および事前塗布ダイ取り付け用接着性材料 | |
JP2015032639A (ja) | 先塗布型熱硬化性アンダーフィル組成物、電子部品装置及び電子部品装置の製造方法 | |
JPWO2013125086A1 (ja) | 半導体用接着剤、フラックス剤、半導体装置の製造方法及び半導体装置 | |
US11674032B2 (en) | Encapsulation resin composition, laminated sheet, cured product, semiconductor device, and method for fabricating semiconductor device | |
TWI827512B (zh) | 半導體用膜狀接著劑、半導體裝置的製造方法及半導體裝置 | |
US20240010890A1 (en) | Flux-compatible epoxy-phenolic adhesive compositions for low gap underfill applications | |
JP2006505674A (ja) | 有機酸含有組成物およびその使用方法 | |
JP2009256466A (ja) | 電子部品用接着剤 | |
JP6048524B2 (ja) | 接着剤組成物 | |
JPWO2013125087A1 (ja) | 半導体用接着剤、フラックス剤、半導体装置の製造方法及び半導体装置 | |
US20230114308A1 (en) | Flux-Compatible Epoxy-Anhydride Adhesives Compositions for Low-Gap Underfill Applications | |
JP6638380B2 (ja) | 先供給型アンダーフィル材及びその硬化物、並びに電子部品装置及びその製造方法 | |
JPWO2010073559A1 (ja) | 液状樹脂組成物および半導体装置 | |
JP2017143310A (ja) | 先塗布型熱硬化性アンダーフィル組成物、電子部品装置及び電子部品装置の製造方法 | |
JP4835229B2 (ja) | 樹脂組成物及び樹脂組成物を使用して作製した半導体装置 | |
CN112566997B (zh) | 黏合剂组合物及半导体装置的制造方法 | |
JP2017117864A (ja) | 先供給型アンダーフィル材及びその硬化物、並びに電子部品装置及びその製造方法 | |
JP6631238B2 (ja) | 先供給型アンダーフィル材、先供給型アンダーフィル材の硬化物、電子部品装置及び電子部品装置の製造方法 | |
JP2019029599A (ja) | 生産性に優れたギャングボンディングプロセス用アンダーフィル絶縁フィルム | |
JP2020057815A (ja) | 先供給型アンダーフィル材及びその硬化物、並びに電子部品装置及びその製造方法 | |
JP6707856B2 (ja) | 先供給型アンダーフィル材、電子部品装置の製造方法、及び電子部品装置 |