TWI598372B - Adhesive composition - Google Patents
Adhesive composition Download PDFInfo
- Publication number
- TWI598372B TWI598372B TW099133972A TW99133972A TWI598372B TW I598372 B TWI598372 B TW I598372B TW 099133972 A TW099133972 A TW 099133972A TW 99133972 A TW99133972 A TW 99133972A TW I598372 B TWI598372 B TW I598372B
- Authority
- TW
- Taiwan
- Prior art keywords
- mass
- parts
- acrylic resin
- adhesive composition
- alicyclic
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08G59/4215—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof cycloaliphatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J151/00—Adhesives based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
- C09J151/06—Adhesives based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers grafted on to homopolymers or copolymers of aliphatic hydrocarbons containing only one carbon-to-carbon double bond
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J151/00—Adhesives based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
- C09J151/08—Adhesives based on graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1802—C2-(meth)acrylate, e.g. ethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
- C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
- C08F283/10—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polymers containing more than one epoxy radical per molecule
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
- C08L2666/04—Macromolecular compounds according to groups C08L7/00 - C08L49/00, or C08L55/00 - C08L57/00; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/062—Copolymers with monomers not covered by C08L33/06
- C08L33/068—Copolymers with monomers not covered by C08L33/06 containing glycidyl groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01045—Rhodium [Rh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Description
本發明係關於一種用於將LED元件等晶片零件覆晶構裝於電路基板上之黏著劑組成物。
為了提高發光二極體(LED)之光出射效率,目前係採用將LED晶片覆晶構裝於基板上之方式(專利文獻1)。於該專利文獻中,作為將LED晶片封裝於基板上之方法之一,係於具有選擇性地塗佈導電糊所成之配線圖案之基板的該配線圖案側表面,預先塗佈由環氧樹脂等絕緣性樹脂形成之底層填充樹脂,然後自其上方將LED晶片以其凸塊面與基板之配線圖案相對向之方式載置,並進行熱壓接合。此時,底層填充樹脂係發揮確保LED晶片之正負電極間之絕緣,並且將LED晶片固定於基板上之作用。
然而,作為將LED晶片覆晶構裝於基板上時使用之底層填充樹脂的環氧樹脂黏著組成物要求硬化時無色透明,因此,通常係摻合不具有成為著色之原因之不飽和鍵且快速硬化性優異的脂環式環氧化合物或縮水甘油基氫化雙酚A化合物作為環氧成分,並摻合可對硬化物賦予良好之透明性且對脂環式環氧化合物顯示優異相容性的脂環式酸酐作為硬化劑。另外,自降低硬化物之彈性模數、提昇耐衝擊性,並且不使硬化物之耐熱性、抗光變色性降低之觀點出發,目前亦正在嘗試於環氧樹脂黏著組成物中摻合具有密接性相對較高之特性的丙烯酸樹脂。
專利文獻1:日本特開平11-168235號公報
但是,即便使用摻合有丙烯酸樹脂之環氧樹脂黏著組成物將LED晶片覆晶構裝於基板上,根據丙烯酸樹脂之種類不同,亦存在黏著力下降,硬化物產生白濁,硬化物著色,或者封裝品之基板上所形成之配線受到腐蝕等問題,目前尚無人提出可同時解決該等問題之環氧樹脂黏著組成物。
本發明之目的在於,在用於將以LED晶片等光半導體晶片為代表之晶片零件覆晶構裝於電路基板上的含有脂環式環氧化合物及脂環式酸酐之黏著劑組成物,摻合丙烯酸樹脂時,同時解決“黏著力下降”、“硬化物產生白濁或著色”、以及“電路基板之配線腐蝕”之問題。
本發明人等發現,藉由使黏著劑組成物由透明性、耐變色性及快速硬化性優異之脂環式環氧化合物及脂環式酸酐系硬化劑、以及丙烯酸樹脂所構成,並且規定該等成分之摻合比例,而且使用使特定比例之甲基丙烯酸縮水甘油酯與(甲基)丙烯酸烷基酯共聚合而成,且吸水率為規定比例以下之樹脂作為丙烯酸樹脂,可達成上述目的,從而完成本發明。另外,於本說明書中,所謂「(甲基)丙烯酸烷基酯」,表示丙烯酸烷基酯或甲基丙烯酸烷基酯。
亦即,本發明提供一種黏著劑組成物,其係用於將晶片零件覆晶構裝於電路基板上者,其特徵在於:含有脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂,脂環式酸酐系硬化劑之含量相對於脂環式環氧化合物100質量份為80~120質量份,該丙烯酸樹脂之含量於脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之合計100質量份中為5~50質量份,該丙烯酸樹脂係使(甲基)丙烯酸烷基酯、與相對於(甲基)丙烯酸烷基酯100質量份為2~100質量份之甲基丙烯酸縮水甘油酯共聚合而成,且吸水率為1.2%以下之樹脂。
另外,本發明提供一種使用上述黏著劑組成物將晶片零件覆晶構裝於電路基板上之連接結構體。
本發明之黏著劑組成物係由特定比例之脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂所構成,並且作為丙烯酸樹脂,係使用使特定比例之甲基丙烯酸縮水甘油酯與(甲基)丙烯酸烷基酯聚合而成,且吸水率為規定比例以下者。因此,可大幅度抑制出現黏著力下降、硬化物產生白濁或著色以及電路基板之配線腐蝕之問題。
本發明係一種用於將晶片零件覆晶構裝於電路基板上之黏著劑組成物,於組成方面而言,係一種含有脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之黏著劑組成物。其中,作為電路基板,可列舉玻璃環氧基板、玻璃基板、可撓性基板等,作為晶片零件並無特別限定,但為了最大限度地發揮本發明之效果,可列舉光半導體元件,尤其是LED元件。
作為構成本發明之黏著劑組成物之脂環式環氧化合物,較佳可列舉分子內具有2個以上環氧基之化合物。該等化合物可為液狀,亦可為固體狀。另外,亦可同時使用兩種以上之脂環式環氧化合物。作為此種脂環式環氧化合物之具體例,可列舉:六氫雙酚A縮水甘油醚、3,4-環氧環己烯基羧酸-3',4'-環氧環己烯基甲酯、1,3,5-三(2,3-環氧丙基)-1,3,5-三嗪-2,4,6-(1H,3H,5H)-三酮等。其中,就可確保硬化物具有適合於LED元件封裝等之光透射性,且快速硬化性亦優異方面而言,可較佳地使用六氫雙酚A縮水甘油醚或3,4-環氧環己烯基羧酸-3',4'-環氧環己烯基甲酯。
於本發明中,除了脂環式環氧化合物以外,亦可於不損及本發明之效果之範圍內同時使用其他環氧化合物。例如可列舉:使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚(bisresorcinol)、雙酚六氟丙酮、四甲基雙酚A、四甲基雙酚F、三羥苯基甲烷、聯二甲苯酚(bixylenol)、苯酚酚醛、甲酚酚醛等多酚與表氯醇反應而得之縮水甘油醚,或者使丙三醇、新戊二醇、乙二醇、丙二醇、丁二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇反應而獲得之聚縮水甘油醚;使對羥基苯甲酸、β-羥基萘甲酸等羥基羧酸與表氯醇反應而獲得之縮水甘油醚酯,或者由鄰苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞甲基四氫鄰苯二甲酸、內亞甲基六氫鄰苯二甲酸、偏苯三甲酸、聚合脂肪酸等多羧酸獲得之聚縮水甘油酯;由胺基苯酚、胺基烷基苯酚獲得之縮水甘油基胺基縮水甘油醚;由胺基苯甲酸獲得之縮水甘油基胺基縮水甘油酯;由苯胺、甲苯胺、三溴苯胺、苯二甲胺、二胺基環己烷、二胺基甲基環己烷、4,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基碸等獲得之縮水甘油胺;環氧化聚烯烴等公知之環氧樹脂類。
作為脂環式酸酐系硬化劑,具體而言可列舉:甲基六氫鄰苯二甲酸酐、2,4-二乙基-1,5-戊二酸酐等。其中,可較佳地使用能夠確保硬化物具有適合於LED元件封裝等之光透射性,且對脂環式環氧化合物顯示良好相容性之甲基六氫鄰苯二甲酸酐。
關於本發明之黏著劑組成物中脂環式環氧化合物與脂環式酸酐系硬化劑各自之使用量,存在若脂環式酸酐系硬化劑過少則黏著力下降,若過多則耐腐蝕性下降之傾向,故而相對於脂環式環氧化合物100質量份,較佳為以80~120質量份,更佳為以90~110質量份之比例使用脂環式酸酐系硬化劑。
本發明之黏著劑組成物中,為了降低硬化物之彈性模數,提昇耐衝擊性等目的而含有丙烯酸樹脂。該丙烯酸樹脂係相對於(甲基)丙烯酸烷基酯100質量份,使甲基丙烯酸縮水甘油酯2~100質量份,較佳為5~70質量份進行共聚合而成之樹脂。其中,作為較佳之(甲基)丙烯酸烷基酯,可列舉丙烯酸乙酯、丙烯酸丁酯、丙烯酸-2-乙基己酯等。
另外,丙烯酸樹脂之吸水率為1.2%以下,較佳為1.0%以下。其原因在於,若吸水率超過1.2%,則腐蝕金屬製電極之可能性增大。此處,吸水率係依據JIS K7209而求出者,具體而言,將厚度1.0mm之丙烯酸樹脂薄片切割成寬度1cm、長度1cm作為試樣,於80℃之真空烘箱內將所得之試樣乾燥20小時,測定重量(W0)。然後,於85℃、85%RH之環境下放置24小時,測定重量(W1),根據以下之式計算出吸水率。
吸水率(%)={(W1-W0)/W0}×100
另外,關於丙烯酸樹脂之重量平均分子量,若其重量平均分子量過小,則黏著力下降,若過大,則難以與脂環式環氧化合物混合,故而較佳為5000~200000,更佳為10000~100000。另外,關於丙烯酸樹脂之玻璃轉移溫度,若該溫度過高,則黏著力下降,故而較佳為50℃以下,更佳為20℃以下。
對於此種丙烯酸樹脂之使用量,存在若過少則黏著力下降,若過多則光學特性下降之傾向,故而於脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之合計100質量份中,該丙烯酸樹脂較佳為以5~50質量份,更佳為以10~40質量份之比例使用。
本發明之黏著劑組成物中,可進而視需要摻合作為硬化促進劑之咪唑化合物。作為咪唑化合物之具體例,可列舉2-甲基-4-乙基咪唑。對於此種咪唑化合物之使用量,若過少則硬化不充分,若過多則光學特性下降,故而相對於脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之合計100質量份,該咪唑化合物較佳為0.01~10質量份,更佳為0.1~5質量份。
另外,本發明之黏著劑組成物中,較佳為以提昇耐熱性及耐光性為目的而同時含有IRGANOX 1010(汽巴精化(Ciba Specialty Chemicals)股份有限公司)等抗熱氧化劑、IRGANOX MD 1024(汽巴精化股份有限公司)等金屬減活劑、Chimasorb 81(汽巴精化股份有限公司)等紫外線抑制劑。關於該等劑之含量,相對於脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之合計100質量份,抗熱氧化劑較佳為0.01~10質量份,更佳為0.1~5質量份,金屬減活劑較佳為0.01~10質量份,更佳為0.1~5質量份,紫外線吸收劑較佳為0.01~10質量份,更佳為0.1~5質量份。
本發明之黏著劑組成物中可視需要摻合先前之黏著劑組成物中亦使用之各種添加劑。例如可摻合矽烷偶合劑、填料等。
本發明之黏著劑組成物可依據常法,藉由將脂環式環氧化合物、脂環式酸酐系硬化劑、丙烯酸樹脂、及視需要之其他添加劑均勻地混合而製造。此時,可依據常法而加工成糊狀物形態、膜形態、高黏性液體形態等形態。另外,該黏著劑組成物為熱硬化型,通常可藉由加熱至150~250℃而使該黏著劑組成物硬化。
本發明之黏著劑組成物係用於將光半導體晶片、尤其是LED晶片等晶片零件覆晶構裝於電路基板上者。因此,使用本發明之黏著劑組成物將光半導體晶片、尤其是LED晶片等晶片零件覆晶構裝於電路基板上所成之連接結構體可大幅度抑制出現黏著力下降、硬化物產生白濁或著色以及電路基板之配線腐蝕之問題。
[實施例]
以下,藉由實施例更具體地說明本發明。
參考例1(丙烯酸樹脂A之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸乙酯(EA)50g、丙烯酸丁酯(BA)50g、甲基丙烯酸縮水甘油酯(GMA)10g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂A。所獲得之丙烯酸樹脂A(EA50:BA50:GMA10)之重量平均分子量為80000,玻璃轉移溫度為-56℃。另外,吸水率為1.0%。
參考例2(丙烯酸樹脂B之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸丁酯(BA)70g、甲基丙烯酸縮水甘油酯(GMA)30g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂B。所獲得之丙烯酸樹脂B(BA70:GMA30)之重量平均分子量為110000,玻璃轉移溫度為-34℃。另外,吸水率為0.5%。
參考例3(丙烯酸樹脂C之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸-2-乙基己酯(2-EHA)70g、甲基丙烯酸縮水甘油酯(GMA)30g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂C。所獲得之丙烯酸樹脂C(2-EHA70:GMA30)之重量平均分子量為110000,玻璃轉移溫度為-33℃。另外,吸水率為0.5%。
參考例4(丙烯酸樹脂D之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸丁酯(BA)30g、甲基丙烯酸丁酯(BMA)50g、甲基丙烯酸縮水甘油酯(GMA)20g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂D。所獲得之丙烯酸樹脂D(BA30:BMA50:GMA20)之重量平均分子量為80000,玻璃轉移溫度為-4.2℃。另外,吸水率為0.5%。
參考例5(丙烯酸樹脂a之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸乙酯(EA)100g、丙烯酸10g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂a。所獲得之丙烯酸樹脂a(EA100:Aac10)之重量平均分子量為95000,玻璃轉移溫度為-33℃。另外,吸水率為1.5%。
參考例6(丙烯酸樹脂b之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸甲酯(MA)70g、甲基丙烯酸縮水甘油酯(GMA)30g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂b。所獲得之丙烯酸樹脂b(MA70:GMA30)之重量平均分子量為110000,玻璃轉移溫度為17℃。另外,吸水率為1.7%。
參考例7(丙烯酸樹脂c之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸乙酯70g、甲基丙烯酸縮水甘油酯(GMA)30g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂c。所獲得之丙烯酸樹脂c(EA70:GMA30)之重量平均分子量為100000,玻璃轉移溫度為-6℃。另外,吸水率為1.5%。
參考例8(丙烯酸樹脂d之製造)
於具備攪拌機、冷凝管之四口燒瓶中,投入丙烯酸乙酯(EA)70g、甲基丙烯酸縮水甘油酯(GMA)25g、甲基丙烯酸羥基乙酯5g、偶氮二丁腈0.2g、乙酸乙酯300g、以及丙酮5g,一面攪拌一面於70℃下進行8小時聚合反應。過濾取出沈澱之粒子,用乙醇洗淨並乾燥,藉此獲得丙烯酸樹脂d。所獲得之丙烯酸樹脂d(EA70:GMA25:HEMA5)之重量平均分子量為120000,玻璃轉移溫度為-5℃。另外,吸水率為1.5%。
實施例1~4、比較例1~8
使用行星式攪拌器將表1所示組成之成分均勻地混合,藉此製備黏著劑組成物。
評價試驗
以如下所述之方式,對實施例1~4及比較例1~8中獲得的糊狀黏著劑組成物進行黏著力、光學特性(膜外觀、色差)、耐腐蝕性之評價。
<黏著力試驗>
於在Cu配線部分閃熔鍍敷有Au之玻璃環氧電路基板上,以厚度達到25μm之方式塗佈糊狀之黏著劑組成物,於其上載置1.5mm見方之IC晶片,使用覆晶接合機於200℃下加熱60秒而進行熱壓接合,獲得連接結構體。對剛獲得後(初期)、回流焊後(260℃)、於150℃下放置100小時後之連接結構體之IC晶片,使用晶片剪力試驗機(RTR-1100,Rhesca股份有限公司)測定黏著強度(N/chip)。所得之結果示於表1。以本黏著力試驗之條件作為前提時,黏著力於實際使用方面理想的是5N/chip以上。
<光學特性試驗>
使用熱壓機對黏著劑組成物加熱加壓而使之硬化,製成厚度75μm之膜,作為試樣。目視觀察所獲得之試樣之膜外觀。然後,使該膜通過波峰溫度為260℃之無鉛焊錫用回流焊爐,依據JIS K7105求出色差(ΔE*ab)。然後,進行熱老化試驗(投入至150℃之烘箱中放置300小時)及光老化試驗(30W/m2,波峰波長為380nm之光源,60℃,100小時(褪色試驗機,Suga Test Instruments股份有限公司)),求出試驗前後之色差(ΔE*ab)。所得之結果示於表1。
<耐腐蝕性試驗>
於具有在銅圖案上鍍敷有Ag之鍍Ag配線的2cm見方之玻璃環氧基板之表面,塗佈0.05g之黏著劑組成物,投入至150℃之烘箱中放置1小時,使黏著劑組成物硬化。藉由無鉛焊錫於配線端部之配線焊接點連接配線。將所得者投入至85℃、85%RH之恆溫恆濕室中,對電極間施加20V電壓50小時,然後,目視觀察鍍Ag部分,依據以下之評價基準評價黏著劑組成物之耐腐蝕性。所得之結果示於表1。
耐腐蝕性評價基準
A:未確認到鍍Ag配線之外觀發生變色之情況
B:確認到鍍Ag配線之外觀產生茶色變色之情況
C:鍍Ag配線發生Ag遷移之情況
由表1可知,實施例1~4之黏著劑組成物係含有相對於脂環式環氧化合物100質量份為81.2質量份之脂環式酸酐系硬化劑、及相對於脂環式環氧化合物與脂環式酸酐系硬化劑之合計100質量份為30~40質量份之丙烯酸樹脂,且該丙烯酸樹脂為使甲基丙烯酸縮水甘油酯、與相對於甲基丙烯酸縮水甘油酯100質量份為230~1000質量份之丙烯酸烷基酯共聚合而成,且吸水率為0.5%以下之樹脂,故而黏著力、光學特性、耐腐蝕性均顯示良好之結果。
相對於此,於比較例1之黏著劑組成物之情況,由於丙烯酸樹脂不溶於脂環式環氧化合物,故而膜外觀產生白濁。
於比較例2之黏著劑組成物之情況,由於SEBS橡膠不溶於脂環式環氧化合物,故而膜外觀產生白濁。
於比較例3之黏著劑組成物之情況,由於SIS橡膠不溶於脂環式環氧化合物,故而膜外觀產生白濁。
於比較例4之黏著劑組成物之情況,由於其硬化物較硬且脆,故而黏著強度較低。
於比較例5之黏著劑組成物之情況,由於丙烯酸樹脂之吸水率較高,故而鍍Ag配線產生明顯之腐蝕。
於比較例6之黏著劑組成物之情況,由於丙烯酸樹脂含有較多之縮水甘油基,吸水率較高,故而鍍Ag配線產生明顯之腐蝕。
於比較例7之黏著劑組成物之情況,由於丙烯酸樹脂含有較多之OH基,吸水率較高,故而鍍Ag配線產生明顯之腐蝕。
於比較例8之黏著劑組成物之情況,由於環氧化合物之含量較多,故而環氧化合物之一部分保持為未硬化之狀態,黏著強度降低。
[產業上之可利用性]
本發明之黏著劑組成物係由特定比例之脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂所構成,並且作為丙烯酸樹脂,係使用使特定比例之甲基丙烯酸縮水甘油酯與(甲基)丙烯酸烷基酯聚合而成,且吸水率為規定比例以下者。因此,可大幅度抑制出現黏著力下降、硬化物產生白濁或著色以及電路基板之配線腐蝕之問題。因此,本發明之黏著劑組成物可於將LED晶片等光半導體晶片覆晶構裝於電路基板上時使用。
Claims (8)
- 一種黏著劑組成物,係用於將晶片零件覆晶構裝於電路基板,其特徵在於:含有脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂,該脂環式酸酐系硬化劑之含量相對於脂環式環氧化合物100質量份為80~120質量份,該丙烯酸樹脂之含量於脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之合計100質量份中為5~50質量份,該丙烯酸樹脂係使(甲基)丙烯酸烷基酯、與相對於(甲基)丙烯酸烷基酯100質量份為2~100質量份之甲基丙烯酸縮水甘油酯共聚合而成且吸水率為1.2%以下之樹脂。
- 如申請專利範圍第1項之黏著劑組成物,其中,該丙烯酸樹脂之重量平均分子量為5000~200000,且玻璃轉移溫度為50℃以下。
- 如申請專利範圍第1項或第2項之黏著劑組成物,其中,脂環式環氧化合物為六氫雙酚A縮水甘油醚或3,4-環氧環己烯基羧酸-3',4'-環氧環己烯基甲酯,脂環式酸酐系硬化劑為甲基六氫鄰苯二甲酸酐。
- 如申請專利範圍第1項或第2項之黏著劑組成物,其中,該(甲基)丙烯酸烷基酯為丙烯酸乙酯、丙烯酸丁酯或丙烯酸-2-乙基己酯。
- 如申請專利範圍第1項或第2項之黏著劑組成物,其中,相對於脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之合計100質量份,含有0.01~10質量份之抗熱氧化劑、0.01~10質量份之金屬減活劑、及0.01~10質量份之紫外線吸收劑。
- 如申請專利範圍第1項或第2項之黏著劑組成物,其中,相對於脂環式環氧化合物、脂環式酸酐系硬化劑及丙烯酸樹脂之合計100質量份,進而含有0.01~10質量份之2-甲基-4-乙基咪唑作為硬化促進劑。
- 一種連接結構體,其係使用申請專利範圍第1項至第6項中任一項之黏著劑組成物將晶片零件覆晶構裝於電路基板而成。
- 如申請專利範圍第7項之連接結構體,其中,晶片零件為LED元件。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009256187A JP2011100927A (ja) | 2009-11-09 | 2009-11-09 | 接着剤組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201130873A TW201130873A (en) | 2011-09-16 |
TWI598372B true TWI598372B (zh) | 2017-09-11 |
Family
ID=43969828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099133972A TWI598372B (zh) | 2009-11-09 | 2010-10-06 | Adhesive composition |
Country Status (7)
Country | Link |
---|---|
US (1) | US20120168814A1 (zh) |
EP (1) | EP2500932B1 (zh) |
JP (1) | JP2011100927A (zh) |
KR (1) | KR20120088530A (zh) |
CN (1) | CN102598236B (zh) |
TW (1) | TWI598372B (zh) |
WO (1) | WO2011055588A1 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102695768B (zh) | 2010-01-15 | 2015-04-29 | 迪睿合电子材料有限公司 | 各向异性导电粘结剂 |
JP2011173951A (ja) * | 2010-02-23 | 2011-09-08 | Dic Corp | エポキシ樹脂組成物、その硬化物、光半導体封止用樹脂組成物、及び光半導体装置 |
JP5619466B2 (ja) * | 2010-04-13 | 2014-11-05 | デクセリアルズ株式会社 | 硬化性樹脂組成物、接着性エポキシ樹脂ペースト、ダイボンド剤、非導電性ペースト、接着性エポキシ樹脂フィルム、非導電性エポキシ樹脂フィルム、異方性導電ペースト及び異方性導電フィルム |
EP2838126A4 (en) | 2012-04-10 | 2015-10-28 | Sumitomo Bakelite Co | SEMICONDUCTOR COMPONENT, MATERIAL FOR CHIP FIXING AND METHOD FOR PRODUCING A SEMICONDUCTOR CONSTRUCTION ELEMENT |
TWI557954B (zh) * | 2012-12-24 | 2016-11-11 | 鴻海精密工業股份有限公司 | 發光二極體 |
CN104004480B (zh) * | 2013-02-22 | 2016-05-04 | 富葵精密组件(深圳)有限公司 | 粘着材料和其制作方法及柔性电路板 |
JP6292808B2 (ja) * | 2013-09-13 | 2018-03-14 | デクセリアルズ株式会社 | 接着剤、及び発光装置 |
JP6178229B2 (ja) * | 2013-12-09 | 2017-08-09 | 日東電工株式会社 | 液晶パネル、及び画像表示装置 |
CN103700752B (zh) * | 2013-12-10 | 2016-12-07 | 西安交通大学 | 一种垂直结构led芯片的凸点键合结构及工艺 |
EP3134444B1 (en) * | 2014-04-24 | 2022-01-26 | 3M Innovative Properties Company | Compositions comprising cleavable crosslinker and methods |
CN103980847B (zh) * | 2014-05-21 | 2015-11-25 | 天津大学 | 自固化聚丙烯酸酯-环氧树脂胶黏剂及制备方法及用途 |
JP5871407B1 (ja) * | 2014-09-19 | 2016-03-01 | 日東電工株式会社 | 偏光板 |
KR102483012B1 (ko) * | 2017-05-31 | 2022-12-29 | 린텍 가부시키가이샤 | 접착제 조성물, 접착 시트, 및 봉지체 |
JP7212831B2 (ja) * | 2017-07-14 | 2023-01-26 | 株式会社レゾナック | 導電性接着剤組成物及びこれを用いた接続構造体 |
JP2020126982A (ja) * | 2019-02-06 | 2020-08-20 | 日立化成株式会社 | フィルム状接着剤及び接着シート |
KR102357279B1 (ko) * | 2019-06-10 | 2022-01-28 | 주식회사 엘지화학 | 반도체 회로 접속용 접착제 조성물 및 이를 포함한 접착 필름 |
JP7298342B2 (ja) * | 2019-07-01 | 2023-06-27 | 東レ株式会社 | 電子機器用接着剤組成物 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11168235A (ja) | 1997-12-05 | 1999-06-22 | Toyoda Gosei Co Ltd | 発光ダイオード |
DE60006360T2 (de) * | 1999-02-18 | 2004-05-13 | Three Bond Co. Ltd., Hachioji | Epoxidharzzusammensetzung |
JP3394029B2 (ja) * | 2000-03-21 | 2003-04-07 | 大塚化学株式会社 | 難燃性エポキシ樹脂組成物、及びその成形物、及び電子部品 |
JP2002146324A (ja) * | 2000-11-16 | 2002-05-22 | Hitachi Chem Co Ltd | 接着剤組成物とそれを用いた接着部材と半導体搭載用基板と半導体装置 |
JPWO2003002661A1 (ja) * | 2001-06-28 | 2004-10-21 | 東レ株式会社 | 耐候性に優れたエポキシ樹脂組成物および繊維強化複合材料 |
JP2006016448A (ja) * | 2004-06-30 | 2006-01-19 | Sanyo Chem Ind Ltd | エポキシ樹脂組成物 |
JP4576966B2 (ja) * | 2004-09-29 | 2010-11-10 | 東亞合成株式会社 | エポキシ樹脂を含有する接着剤組成物 |
JP5087910B2 (ja) * | 2005-12-13 | 2012-12-05 | 東レ株式会社 | 電子機器用接着剤組成物、電子機器用接着剤シートおよびそれを用いた電子部品 |
EP1967539A4 (en) * | 2005-12-28 | 2012-01-18 | Kaneka Corp | HARDENABLE COMPOSITION IN COMBINATION WITH THERMALLY RADICALLY HARDENED / THERMALLY LATENT HARDENABLE EPOXY RESIN |
CN102850982A (zh) * | 2007-10-05 | 2013-01-02 | 日立化成工业株式会社 | 粘接剂组合物和使用该组合物的电路连接膜,以及电路部件的连接方法和电路连接体 |
JP2009099825A (ja) * | 2007-10-18 | 2009-05-07 | Hitachi Chem Co Ltd | 半導体装置接着剤用アクリル系樹脂及びアクリル系樹脂組成物 |
-
2009
- 2009-11-09 JP JP2009256187A patent/JP2011100927A/ja active Pending
-
2010
- 2010-09-09 WO PCT/JP2010/065474 patent/WO2011055588A1/ja active Application Filing
- 2010-09-09 KR KR1020117017758A patent/KR20120088530A/ko not_active Application Discontinuation
- 2010-09-09 EP EP10828148.6A patent/EP2500932B1/en active Active
- 2010-09-09 CN CN201080050472.8A patent/CN102598236B/zh not_active Expired - Fee Related
- 2010-09-09 US US13/496,367 patent/US20120168814A1/en not_active Abandoned
- 2010-10-06 TW TW099133972A patent/TWI598372B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2500932A1 (en) | 2012-09-19 |
CN102598236B (zh) | 2016-01-27 |
US20120168814A1 (en) | 2012-07-05 |
KR20120088530A (ko) | 2012-08-08 |
EP2500932A4 (en) | 2015-10-28 |
TW201130873A (en) | 2011-09-16 |
CN102598236A (zh) | 2012-07-18 |
WO2011055588A1 (ja) | 2011-05-12 |
EP2500932B1 (en) | 2016-11-09 |
JP2011100927A (ja) | 2011-05-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI598372B (zh) | Adhesive composition | |
JP5619466B2 (ja) | 硬化性樹脂組成物、接着性エポキシ樹脂ペースト、ダイボンド剤、非導電性ペースト、接着性エポキシ樹脂フィルム、非導電性エポキシ樹脂フィルム、異方性導電ペースト及び異方性導電フィルム | |
TWI314571B (zh) | ||
CN104364337B (zh) | 光反射性各向异性导电粘接剂及发光装置 | |
JP4967655B2 (ja) | 樹脂組成物及び該樹脂組成物を使用して作製した半導体装置 | |
CN109439254B (zh) | 一种可返修的高可靠性填充胶 | |
KR20120130705A (ko) | 실페닐렌 구조 및 실록산 구조를 갖는 중합체 및 이의 제조 방법, 접착제 조성물, 접착 시트 및 반도체 장치 보호용 재료, 및 반도체 장치 | |
JP5908306B2 (ja) | 半導体接合用接着剤及び半導体接合用接着フィルム | |
JP2010135621A (ja) | チップ用保護膜形成用シートおよび保護膜付半導体チップ | |
JP6003763B2 (ja) | 熱硬化性樹脂組成物、光反射性異方性導電接着剤及び発光装置 | |
JP2010265359A (ja) | 接着剤組成物、回路部材接続用接着剤シート及び半導体装置の製造方法 | |
KR20100049499A (ko) | 반도체용 접착제 조성물 및 그것을 이용하여 제조한 반도체 장치 | |
JP2007059787A (ja) | 半導体用接着フィルム及びこれを用いた半導体装置 | |
KR20110123731A (ko) | 전자 부품용 접착제 | |
JP6048524B2 (ja) | 接着剤組成物 | |
TWI748105B (zh) | 半導體用膜狀接著劑、半導體裝置的製造方法及半導體裝置 | |
JP2006022195A (ja) | 硬化性樹脂組成物、接着性エポキシ樹脂シート及び回路基板接合体 | |
JP7384168B2 (ja) | 半導体装置の製造方法及び半導体ウエハ加工用接着フィルム | |
JP2009256466A (ja) | 電子部品用接着剤 | |
US20240010890A1 (en) | Flux-compatible epoxy-phenolic adhesive compositions for low gap underfill applications | |
TWI476267B (zh) | Anisotropic conductive adhesive | |
KR102186521B1 (ko) | 반도체 회로 접속용 접착제 조성물 및 이를 포함한 접착 필름 | |
JP2002134529A (ja) | 絶縁ペーストおよび光半導体装置 | |
JP2020145227A (ja) | 接着フィルム | |
JPWO2019171544A1 (ja) | 半導体装置の製造方法及びフィルム状接着剤 |