JP2005532678A - 層間誘電体および事前塗布ダイ取り付け用接着性材料 - Google Patents
層間誘電体および事前塗布ダイ取り付け用接着性材料 Download PDFInfo
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- JP2005532678A JP2005532678A JP2004514137A JP2004514137A JP2005532678A JP 2005532678 A JP2005532678 A JP 2005532678A JP 2004514137 A JP2004514137 A JP 2004514137A JP 2004514137 A JP2004514137 A JP 2004514137A JP 2005532678 A JP2005532678 A JP 2005532678A
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- 239000000463 material Substances 0.000 title claims abstract description 146
- 239000000853 adhesive Substances 0.000 title claims abstract description 142
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 142
- 239000011229 interlayer Substances 0.000 title claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 56
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229920002725 thermoplastic elastomer Polymers 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 95
- 239000004065 semiconductor Substances 0.000 claims description 74
- 125000000217 alkyl group Chemical group 0.000 claims description 37
- -1 alkylene amide Chemical class 0.000 claims description 36
- 239000010410 layer Substances 0.000 claims description 34
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical compound C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 claims description 29
- 230000036961 partial effect Effects 0.000 claims description 23
- 125000002947 alkylene group Chemical group 0.000 claims description 21
- 125000003118 aryl group Chemical group 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 150000002431 hydrogen Chemical class 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 229920001400 block copolymer Polymers 0.000 claims description 12
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 10
- 125000005842 heteroatom Chemical group 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 9
- 125000000524 functional group Chemical group 0.000 claims description 8
- 125000000743 hydrocarbylene group Chemical group 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- BCHZICNRHXRCHY-UHFFFAOYSA-N 2h-oxazine Chemical group N1OC=CC=C1 BCHZICNRHXRCHY-UHFFFAOYSA-N 0.000 claims description 6
- FKAWETHEYBZGSR-UHFFFAOYSA-N 3-methylidenepyrrolidine-2,5-dione Chemical compound C=C1CC(=O)NC1=O FKAWETHEYBZGSR-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 6
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 125000005647 linker group Chemical group 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 125000000732 arylene group Chemical group 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- IMSODMZESSGVBE-UHFFFAOYSA-N 2-Oxazoline Chemical compound C1CN=CO1 IMSODMZESSGVBE-UHFFFAOYSA-N 0.000 claims description 2
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 239000004643 cyanate ester Substances 0.000 claims description 2
- 125000000962 organic group Chemical group 0.000 claims description 2
- 125000005375 organosiloxane group Chemical group 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 150000003457 sulfones Chemical class 0.000 claims description 2
- 150000003462 sulfoxides Chemical class 0.000 claims description 2
- 150000003553 thiiranes Chemical class 0.000 claims description 2
- 150000003568 thioethers Chemical class 0.000 claims description 2
- 150000003573 thiols Chemical class 0.000 claims description 2
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 1
- 102100021850 Nardilysin Human genes 0.000 claims 1
- 108090000970 Nardilysin Proteins 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 24
- 125000004432 carbon atom Chemical group C* 0.000 description 17
- 150000003923 2,5-pyrrolediones Chemical class 0.000 description 14
- 208000029523 Interstitial Lung disease Diseases 0.000 description 12
- 239000000178 monomer Substances 0.000 description 11
- 125000001424 substituent group Chemical group 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 9
- 239000007822 coupling agent Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920003192 poly(bis maleimide) Polymers 0.000 description 9
- 239000003085 diluting agent Substances 0.000 description 8
- 239000000945 filler Substances 0.000 description 8
- 239000003999 initiator Substances 0.000 description 8
- 229920002554 vinyl polymer Polymers 0.000 description 8
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 7
- 125000001072 heteroaryl group Chemical group 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 229960000834 vinyl ether Drugs 0.000 description 7
- 0 *C(C(N1I)O)=CC1=O Chemical compound *C(C(N1I)O)=CC1=O 0.000 description 6
- 125000004450 alkenylene group Chemical group 0.000 description 6
- 150000005130 benzoxazines Chemical class 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 150000001993 dienes Chemical class 0.000 description 5
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 125000003342 alkenyl group Chemical group 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 125000000392 cycloalkenyl group Chemical group 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- 150000002148 esters Chemical class 0.000 description 4
- 230000009969 flowable effect Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 125000005409 triarylsulfonium group Chemical group 0.000 description 4
- BLHDYAXSQWGYSM-UHFFFAOYSA-N 3-octadecylpyrrole-2,5-dione Chemical compound CCCCCCCCCCCCCCCCCCC1=CC(=O)NC1=O BLHDYAXSQWGYSM-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 239000011231 conductive filler Substances 0.000 description 3
- 125000000623 heterocyclic group Chemical group 0.000 description 3
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 125000003107 substituted aryl group Chemical group 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- NEOYVIXDHCQJNW-UHFFFAOYSA-N 1-ethenoxy-18-methylnonadecane Chemical compound CC(C)CCCCCCCCCCCCCCCCCOC=C NEOYVIXDHCQJNW-UHFFFAOYSA-N 0.000 description 2
- PSYZZPZSAKLGJZ-UHFFFAOYSA-N 1-ethenoxydocosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCOC=C PSYZZPZSAKLGJZ-UHFFFAOYSA-N 0.000 description 2
- QJJDJWUCRAPCOL-UHFFFAOYSA-N 1-ethenoxyoctadecane Chemical compound CCCCCCCCCCCCCCCCCCOC=C QJJDJWUCRAPCOL-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- 229920002633 Kraton (polymer) Polymers 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 125000005520 diaryliodonium group Chemical group 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229940052303 ethers for general anesthesia Drugs 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000005702 oxyalkylene group Chemical group 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920000909 polytetrahydrofuran Polymers 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 150000003440 styrenes Chemical class 0.000 description 2
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 2
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- QSFGKJIZZAFQOL-UHFFFAOYSA-N (cyanoamino)-nitroazanide Chemical compound [O-][N+](=O)[N-]NC#N QSFGKJIZZAFQOL-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- UEIPWOFSKAZYJO-UHFFFAOYSA-N 1-(2-ethenoxyethoxy)-2-[2-(2-ethenoxyethoxy)ethoxy]ethane Chemical compound C=COCCOCCOCCOCCOC=C UEIPWOFSKAZYJO-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- SLBOQBILGNEPEB-UHFFFAOYSA-N 1-chloroprop-2-enylbenzene Chemical compound C=CC(Cl)C1=CC=CC=C1 SLBOQBILGNEPEB-UHFFFAOYSA-N 0.000 description 1
- FCURPCNDJKSZQT-UHFFFAOYSA-N 1-ethenoxy-22-methyltricosane Chemical compound CC(C)CCCCCCCCCCCCCCCCCCCCCOC=C FCURPCNDJKSZQT-UHFFFAOYSA-N 0.000 description 1
- DWPPUQSZUBGEPH-UHFFFAOYSA-N 10,11-dioctylicosane Chemical compound CCCCCCCCCC(CCCCCCCC)C(CCCCCCCC)CCCCCCCCC DWPPUQSZUBGEPH-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- SDJHPPZKZZWAKF-UHFFFAOYSA-N 2,3-dimethylbuta-1,3-diene Chemical compound CC(=C)C(C)=C SDJHPPZKZZWAKF-UHFFFAOYSA-N 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- AVTLBBWTUPQRAY-UHFFFAOYSA-N 2-(2-cyanobutan-2-yldiazenyl)-2-methylbutanenitrile Chemical compound CCC(C)(C#N)N=NC(C)(CC)C#N AVTLBBWTUPQRAY-UHFFFAOYSA-N 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- AXWJKQDGIVWVEW-UHFFFAOYSA-N 2-(dimethylamino)butanedioic acid Chemical compound CN(C)C(C(O)=O)CC(O)=O AXWJKQDGIVWVEW-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- WFUGQJXVXHBTEM-UHFFFAOYSA-N 2-hydroperoxy-2-(2-hydroperoxybutan-2-ylperoxy)butane Chemical compound CCC(C)(OO)OOC(C)(CC)OO WFUGQJXVXHBTEM-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- BSMGLVDZZMBWQB-UHFFFAOYSA-N 2-methyl-1-phenylpropan-1-one Chemical compound CC(C)C(=O)C1=CC=CC=C1 BSMGLVDZZMBWQB-UHFFFAOYSA-N 0.000 description 1
- UIGULSHPWYAWSA-UHFFFAOYSA-N 3-amino-4-[(2-methylpropan-2-yl)oxy]-4-oxobutanoic acid;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)C(N)CC(O)=O UIGULSHPWYAWSA-UHFFFAOYSA-N 0.000 description 1
- BIRCHUKFJGBFFJ-UHFFFAOYSA-N 3-docosylpyrrole-2,5-dione Chemical compound CCCCCCCCCCCCCCCCCCCCCCC1=CC(=O)NC1=O BIRCHUKFJGBFFJ-UHFFFAOYSA-N 0.000 description 1
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- IYFPUJIYSVFHKT-UHFFFAOYSA-N C(c1ccc2OCNCc2c1)c(cc1)cc2c1OCNC2 Chemical compound C(c1ccc2OCNCc2c1)c(cc1)cc2c1OCNC2 IYFPUJIYSVFHKT-UHFFFAOYSA-N 0.000 description 1
- NAEJIUKUFIHRKT-UHFFFAOYSA-N CC(C)(c(cc1)cc(C2)c1OCN2c1ccccc1)c(cc1C2)ccc1OCN2c1ccccc1 Chemical compound CC(C)(c(cc1)cc(C2)c1OCN2c1ccccc1)c(cc1C2)ccc1OCN2c1ccccc1 NAEJIUKUFIHRKT-UHFFFAOYSA-N 0.000 description 1
- XVKRMWQDAAWGGH-UHFFFAOYSA-N CC([O-])C.CC([O-])C.CC([O-])C.[Ti+3].C(C(=C)C)(=O)OCCOC(CC(=O)C)=O Chemical compound CC([O-])C.CC([O-])C.CC([O-])C.[Ti+3].C(C(=C)C)(=O)OCCOC(CC(=O)C)=O XVKRMWQDAAWGGH-UHFFFAOYSA-N 0.000 description 1
- ISGNQYATBLCRMW-UHFFFAOYSA-N COC1=C(C(=O)C(C(CC(C)(C)C)C)[PH2]=O)C(=CC=C1)OC Chemical compound COC1=C(C(=O)C(C(CC(C)(C)C)C)[PH2]=O)C(=CC=C1)OC ISGNQYATBLCRMW-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004823 Reactive adhesive Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000004729 acetoacetic acid derivatives Chemical class 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000006294 amino alkylene group Chemical group 0.000 description 1
- 125000005021 aminoalkenyl group Chemical group 0.000 description 1
- 125000004103 aminoalkyl group Chemical group 0.000 description 1
- 125000005014 aminoalkynyl group Chemical group 0.000 description 1
- 125000005001 aminoaryl group Chemical group 0.000 description 1
- 125000005124 aminocycloalkyl group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 125000005019 carboxyalkenyl group Chemical group 0.000 description 1
- 125000004181 carboxyalkyl group Chemical group 0.000 description 1
- 125000005026 carboxyaryl group Chemical group 0.000 description 1
- 125000005352 carboxycycloalkyl group Chemical group 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012955 diaryliodonium Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- CJSBUWDGPXGFGA-UHFFFAOYSA-N dimethyl-butadiene Natural products CC(C)=CC=C CJSBUWDGPXGFGA-UHFFFAOYSA-N 0.000 description 1
- RSJLWBUYLGJOBD-UHFFFAOYSA-M diphenyliodanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[I+]C1=CC=CC=C1 RSJLWBUYLGJOBD-UHFFFAOYSA-M 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 150000002019 disulfides Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 125000005549 heteroarylene group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002432 hydroperoxides Chemical class 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- QQVIHTHCMHWDBS-UHFFFAOYSA-L isophthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC(C([O-])=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-L 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- FZUGPQWGEGAKET-UHFFFAOYSA-N parbenate Chemical compound CCOC(=O)C1=CC=C(N(C)C)C=C1 FZUGPQWGEGAKET-UHFFFAOYSA-N 0.000 description 1
- 150000004978 peroxycarbonates Chemical class 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- UKASIOIEWZDBIT-UHFFFAOYSA-N phenyl-(2,3,4-trimethylphenyl)methanone Chemical compound CC1=C(C)C(C)=CC=C1C(=O)C1=CC=CC=C1 UKASIOIEWZDBIT-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000005017 substituted alkenyl group Chemical group 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 125000004001 thioalkyl group Chemical group 0.000 description 1
- 125000005000 thioaryl group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08L79/085—Unsaturated polyimide precursors
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J2479/00—Presence of polyamine or polyimide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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Abstract
【解決手段】
(a)第1の表面と第2の表面を有し、第1の表面がその上に所定のパターン状に配置された電気接点を有しているチップ・ダイ、および
(b)前記チップ・ダイの第2の表面上またはその一部に配置されたBステージ状態のダイ取り付け用接着性材料であって、Bステージ化する前に、
(i)マレイミド−、イタコンイミド−またはナジイミド−含有化合物の1種または2種以上を熱可塑性エラストマーと共に液状で含有するダイ取り付け用接着性材料
を有する製品。
Description
その後、さらに、例えば半田付けまたはそうでなければボンディングワイヤー80によって、コンタクトパッド66とコンタクトパッド76の間で確立された電気的な接続をとおして、チップ・ダイ62は基板70と電気的に接続される。
{但しこれらは、共有結合、−O−、−S−、−NR−、−O−C(O)−、−O−C(O)−O−、−O−C(O)−NR−、−NR−C(O)−、−NR−C(O)−O−、−NR−C(O)−NR−、−S−C(O)−、−S−C(O)−O−、−S−C(O)−NR−、−S(O)−、−S(O)2−、−O−S(O)2−、−O−S(O)2−O−、−O−S(O)2−NR−、−O−S(O)−、−O−S(O)−O−、−O−S(O)−NR−、−O−NR−C(O)−、−O−NR−C(O)−O−、−O−NR−C(O)−NR−、−NR−O−C(O)−、−NR−O−C(O)−O−、−NR−O−C(O)−NR−、−O−NR−C(S)−、−O−NR−C(S)−O−、−O−NR−C(S)−NR−、−NR−O−C(S)−、−NR−O−C(S)−O−、−NR−O−C(S)−NR−、−O−C(S)−、−O−C(S)−O−、−O−C(S)−NR−、−NR−C(S)−、−NR−C(S)−O−、−NR−C(S)−NR−、−S−S(O)2−、−S−S(O)2−O−、−S−S(O)2−NR−、−NR−O−S(O)−、−NR−O−S(O)−O−、−NR−O−S(O)−NR−、−NR−O−S(O)2−、NR−O−S(O)2−O−、−NR−O−S(O)2−NR−、−O−NR−S(O)−、−O−NR−S(O)−O−、−O−NR−S(O)−NR−、−O−NR−S(O)2−O−、−O−NR−S(O)2−NR−、−O−NR−S(O)2−、−O−P(O)R2−、−S−P(O)R2−、−NR−P(O)R2−(ここで各Rは、独立して水素、アルキル基または置換されたアルキル基を表す)、およびそれらの任意の2以上の組合わせからなる群より選ばれる1種または2種以上の結合基を含んでいてもよい。}
から選ばれる一価または多価基であるものを挙げることができる。
(i)アルキレン鎖の上の置換基として、あるいはアルキレン鎖の主鎖の一部として飽和の環部分構造を含んでいてもよい直鎖アルキレンまたは分岐アルキレン、もしくは
(ii) −[(CR2)r−O−]q−(CR2)s−
(但し、各Rは独立して水素、アルキルまたは置換アルキルであり、rおよびsはそれぞれ上に定義したとおりであり、qは1から50の範囲である。)で表される構造を有するポリアルキレンオキシド
を示す。}
で示される構造を有する芳香族基。
で表される構造を有する2または3置換芳香族部分構造。
t=2〜10、
k=1、2または3、
g=1から約50、
各Arは独立して上に定義した通りであり、
Eは、−O−または−NR5− (ここでR5は水素または低級アルキル)であり、
Wは、
(i)直鎖または分岐鎖のアルキル、アルキレン、オキシアルキレン、アルケニル、アルケニレン、オキシアルケニレン、エステル、またはポリエステル;
(ii)−(C(R3)2)d−[Si(R4)2−O]f−Si(R4)2−(C(R3)2)e−、−(C(R3)2)d−C(R3)−C(O)O−(C(R3)2)d−[Si(R4)2−O]f−Si(R4)2−(C(R3)2)e−O(O)C−(C(R3)2)e−、または−(C(R3)2)d−C(R3)−O(O)C−(C(R3)2)d−[Si(R4)2−O]f−Si(R4)2−(C(R3)2)e−C(O)O−(C(R3)2)e− (但し、各R3は独立して水素、アルキルまたは置換アルキルを表し、各R4は独立して水素、低級アルキルまたはアリールを表し、d=1〜10、e=1〜10、およびf=1〜50を表す)で示される構造を有するシロキサン;または
(iii)−[(CR2)r−O−]f−(CR2)s−構造(但し、Rは独立して水素、アルキルまたは置換されたアルキル、r=1〜10、s=1〜10を表し、fは上に定義されたとおりである)を有するポリアルキレンオキシド
を表し、Wは任意にヒドロキシ、アルコキシ、カルボキシ、ニトリル、シクロアルキルまたはシクロアルケニルから選ばれた置換基を有していてもよい。}
で示される構造を有する芳香族基。
{但し、各R6は独立して水素または低級アルキルであり、各R7は独立して、1〜18の炭素原子を有するアルキル、アリールまたはアリールアルキルであり、各R8は鎖に100個までの原子を有するアルキルまたはアルキルオキシ鎖であって任意にArで置換されていてもよく、Uは−O−、−S−、−N(R)−、または−P(L)1,2− (但し、Rは上に定義したとおりであり、Lは独立して=O、=S、−ORまたは−Rである。)、v=0〜50である。}
で表される構造を有するウレタングループ。
を含むことができる。事前塗布されるダイ取り付け接着性材料の中に、これらの付加的成分がベンズオキサジンと共に採用されるときには、エポキシ樹脂が存在し、フェノール成分のみではない成分(iii)が存在するがことが好ましい。
Arは置換されていてもよいアリーレン;
Qは、次の構造を有するオキサジン環またはそのアミン塩
nは、1または2であり、
mは、存在しなくてもよいが、存在するときは1〜4であり、
xおよびyは互いに独立して0〜4であり、そして
R11、R12あるいはR13の少なくとも1つは、重合可能な部分構造である。例えば、あるベンズオキサジンはL−(Ar(Qn))mで表される。
Arは置換されていてもよいアリーレン、
Qは、次の構造を有するオキサジン環またはそのアミン塩:
nは、1または2であり、
xおよびyは互いに独立して0〜4であり、そして
R11、R12あるいはR13の少なくとも1つは、重合可能な部分構造である。
それぞれのRは独立して、水素または低級アルキルから選ばれ、
それぞれのQは独立して、エーテル、ケトン、エステルまたはリバースエステル(reverse ester)から選ばれ、そして
Yは一価の部分構造あるいは多価の結合(リンク)部分構造である。
a.本発明の製品を用意する工程;
b.キャリヤー基板を用意する工程;
c.アセンブリを形成するために、本発明の製品とキャリヤー基板が事前塗布されたダイ接着剤によって分離されるように本発明の製品をキャリヤー基板に隣接させる工程;および
d.事前塗布されたダイ接着剤を、事前塗布されたダイ接着剤を接着剤硬化させるのに十分な温度条件へ曝す工程
を有する。
第1の実施例において、熱可塑性のエラストマーの成分としてスチレン‐ブタジエンゴムブロック共重合体KRATON D−1102、およびマレイミド類としてオクタデシルマレイミドおよびX−BMI(10,11−ジオクチルエイコサンの1,20−ビスマレイミド誘導体)を使用して、半導体チップへの事前塗布用のダイ取り付け接着性材料を調製した。事前塗布用のダイ取り付け用接着性材料を、表1に示す成分から調製した。
Claims (33)
- (a)第1の表面と第2の表面を有し、第1の表面がその上に所定のパターン状に配置された電気接点を有しているチップ・ダイ、および
(b)前記チップ・ダイの第2の表面上またはその一部に配置されたBステージ状態のダイ取り付け用接着性材料であって、Bステージ化する前に、
(i)マレイミド−、イタコンイミド−またはナジイミド−含有化合物の1種または2種以上を熱可塑性エラストマーと共に液状で含有するダイ取り付け用接着性材料
を有する製品。 - (a)第1の表面と第2の表面を有し、第1の表面がその上に所定のパターン状に配置された電気接点を有しているチップ・ダイ、および
(b)前記チップ・ダイの第2の表面上またはその一部に配置されたダイ取り付け用接着性材料であって、
(i)マレイミド−、イタコンイミド−またはナジイミド−含有化合物の1種または2種以上を、必要により任意成分として熱可塑性エラストマーと共に含有するダイ取り付け用接着性材料
を有する製品。 - (a)第1の表面と第2の表面を有し、第1の表面がその上に所定のパターン状に配置された電気接点を有しているチップ・ダイ、および
(b)前記チップ・ダイの第2の表面上またはその一部に配置されたダイ取り付け用接着性材料であって、
(i)ベンズオキサジン含有化合物の1種または2種以上を、必要により任意成分として熱可塑性エラストマーと共に含有するダイ取り付け用接着性材料
を有する製品。 - 前記ダイ取り付け用接着性材料が、さらに、
(ii) エポキシ樹脂またはエピスルフィド樹脂成分;
(iii)任意成分として、オキサゾリン成分、シアネート・エステル成分、フェノール成分、チオフェノール成分、ポリイミド/シロキサン成分、マレイミド含有成分、ナジイミド含有成分、またイタコンイミド含有成分;および
(iv)任意成分として、硬化剤
を含有する請求項3記載の製品。 - 前記成分(ii)がエポキシであり、成分(iii)が存在するがフェノール成分のみでないことを特徴とする請求項3記載の製品。
- 製品のチップ・ダイの第1の表面上の電気接点が、それが付けられることになっているキャリヤー基板との電気的接続を提供する請求項1記載の製品。
- 前記電気接点がハンダバンプを含む請求項1記載の製品。
- 製品のチップ・ダイの第1の表面上の電気接点が、それが付けられることになっているキャリヤー基板との電気的接続を提供する請求項2記載の製品。
- 前記電気接点がハンダバンプを含む請求項2記載の製品。
- 製品のチップ・ダイの第1の表面上の電気接点が、それが付けられることになっているキャリヤー基板との電気的接続を提供する請求項3記載の製品。
- 前記電気接点がハンダバンプを含む請求項3記載の製品。
- 前記電気接点が実質的に鉛を含有しないハンダバンプを含む請求項3記載の製品。
- 前記電気接点が約200℃を超える融点を有するハンダバンプを含む請求項3記載の製品。
- 前記Jが、マレイミド、ナジイミドおよび/またはイタコンイミド化合物を液状にするのに十分な長さと分岐とを有している分岐鎖アルキル、アルキレン、アルキレンオキシド、アルキレンカルボキシルまたはアルキレンアミド類であり、mが1、2または3である請求項14記載の製品。
- 前記熱可塑性エラストマーが、Aを非エラストマーの重合体ブロック、Bをエラストマーの重合体ブロックとしたとき、少なくとも一般式(A−B)または(A−B−A)のユニットを有しているブロック共重合体を含む請求項1または2記載の製品。
- 前記ベンズオキサジン成分が、
Arは置換されていてもよいアリーレン;
Qは、次の構造を有するオキサジン環またはそのアミン塩:
nは、1または2であり、
mは、存在しなくてもよいが、存在するときは1〜4であり、
xおよびyは互いに独立して0〜4であり、そして
R11、R12あるいはR13の少なくとも1つは、重合可能な部分構造である。〕
を含む請求項3記載の製品。 - 事前に塗布されたダイ取り付け用接着性材料が、前記構造I、IIおよびIIIにおいて次の条件、即ち:
m=1〜6、
p=0、
R2が、水素または低級アルキルから独立して選ばれ、そして
Jが、ヒドロカルビル、置換されたヒドロカルビル、ヘテロ原子含有ヒドロカルビル、置換されたヘテロ原子含有ヒドロカルビル、ヒドロカルビレン、置換されたヒドロカルビレン、ヘテロ原子含有ヒドロカルビレン、置換されたヘテロ原子含有ヒドロカルビレン、ポリシロキサン、ポリシロキサン−ポリウレタンブロック共重合体またはこれらの2種以上組合わせからなる群
{但しこれらは、共有結合、−O−、−S−、−NR−、−O−C(O)−、−O−C(O)−O−、−O−C(O)−NR−、−NR−C(O)−、−NR−C(O)−O−、−NR−C(O)−NR−、−S−C(O)−、−S−C(O)−O−、−S−C(O)−NR−、−S(O)−、−S(O)2−、−O−S(O)2−、−O−S(O)2−O−、−O−S(O)2−NR−、−O−S(O)−、−O−S(O)−O−、−O−S(O)−NR−、−O−NR−C(O)−、−O−NR−C(O)−O−、−O−NR−C(O)−NR−、−NR−O−C(O)−、−NR−O−C(O)−O−、−NR−O−C(O)−NR−、−O−NR−C(S)−、−O−NR−C(S)−O−、−O−NR−C(S)−NR−、−NR−O−C(S)−、−NR−O−C(S)−O−、−NR−O−C(S)−NR−、−O−C(S)−、−O−C(S)−O−、−O−C(S)−NR−、−NR−C(S)−、−NR−C(S)−O−、−NR−C(S)−NR−、−S−S(O)2−、−S−S(O)2−O−、−S−S(O)2−NR−、−NR−O−S(O)−、−NR−O−S(O)−O−、−NR−O−S(O)−NR−、−NR−O−S(O)2−、NR−O−S(O)2−O−、−NR−O−S(O)2−NR−、−O−NR−S(O)−、−O−NR−S(O)−O−、−O−NR−S(O)−NR−、−O−NR−S(O)2−O−、−O−NR−S(O)2−NR−、−O−NR−S(O)2−、−O−P(O)R2−、−S−P(O)R2−、−NR−P(O)R2−(ここで各Rは、独立して水素、アルキル基または置換されたアルキル基を表す)、およびそれらの任意の2以上の組合わせからなる群より選ばれる1種または2種以上の結合基を含んでいてもよい。}
から選ばれる一価または多価基である
という条件を満たすマレイミド含有化合物、イタコンイミド含有化合物またはナジイミド含有化合物を含有する請求項14記載の製品。 - マレイミド−、イタコンイミド−またはナジイミド−含有化合物が、それぞれ一価の基に結合したマレイミド官能基、イタコンイミド官能基またはナジイミド官能基を含むか、またはそれぞれ多価基で分離された複数のマレイミド官能基、複数のイタコンイミド官能基または複数のナジイミド官能基を含み、その際、一価の基または多価基は、マレイミド−、イタコンイミド−またはナジイミド−含有化合物をそれぞれ液状にするのに十分な長さと分岐とを有している請求項1または2記載の製品。
- 請求項1、2または3の製品をキャリヤー基板に接着的に取り付ける方法であって、
a.請求項1、2または3の製品を用意する工程;
b.キャリヤー基板を用意する工程;
c.アセンブリを形成するために、請求項1、2または3の製品とキャリヤー基板が事前塗布されたダイ取り付け用接着性材料によって分離されるように請求項1、2または3の製品をキャリヤー基板に合わせる工程;および
d.事前塗布されたダイ取り付け用接着性材料を、事前塗布されたダイ取り付け用接着性材料を硬化させるのに十分な温度条件へ曝す工程
を有する方法。 - 前記キャリヤー基板がチップ・ダイである請求項24記載の方法。
- 前記キャリヤー基板が事前塗布されたダイ取り付けチップ・ダイである請求項24記載の方法。
- 前記キャリヤー基板が回路基板である請求項24記載の方法。
- シリコン基板;
半導体層;
その少なくとも2つの間にマレイミド−、イタコンイミド−またはナジイミド−含有化合物の1種または2種以上を含有する層間誘電体が存在する、少なくとも2つの導電層、
を備えた半導体チップ。 - シリコン基板;
半導体層;
その少なくとも2つの間にベンズオキサジン含有化合物の1種または2種以上を含有する層間誘電体が存在する、少なくとも2つの導電層、
を備えた半導体チップ。 - 対向する2つの面を有し、その一つはキャリヤー基板との接合のためであって、残りの一つは電気接続を形成するための電気接続部を有し、そこで接合面には、マレイミド−、イタコンイミド−またはナジイミド−含有化合物の1種または2種以上またはベンズオキサジン含有化合物の1種または2種以上を含有する事前塗布された量のダイ取り付け用接着性材料が配置されている半導体チップを用意する工程;
半導体チップとの接合のための表面部分、および半導体チップとの電気接続を形成するための別の表面部分を有するキャリヤー基板を用意する工程;
半導体アセンブリを形成するために、事前塗布されたダイ取り付け用接着性材料を塗布した半導体チップの接合表面と、キャリヤー基板の接合表面を合わせ、この半導体アセンブリを事前塗布したダイ取り付け用接着性材料を硬化させるのに十分な条件に曝し、そこで半導体チップをキャリアー基板に接合する工程;および
前記半導体チップと前記キャリヤー基板との電気的接続を形成する工程
を有する半導体装置のアセンブリ方法。 - (a)所定のパターン状に配置された電気接点を有する表面、および前記表面の一部に層として配置されたBステージ状態のダイ取り付け用接着性材料であって、Bステージ化する前に、
(i)マレイミド−、イタコンイミド−またはナジイミド−含有化合物の1種または2種以上を熱可塑性エラストマーと共に液状で含有するダイ取り付け用接着性材料
を備えたキャリヤー基板を含む製品。 - (a)所定のパターン状に配置された電気接点を有する表面、および前記表面の一部に層として配置された事前塗布されたダイ取り付け用接着性材料であって、
(i)マレイミド−、イタコンイミド−またはナジイミド−含有化合物の1種または2種以上を、必要により任意成分として熱可塑性エラストマーと共に含有するダイ取り付け用接着性材料
を備えたキャリヤー基板を含む製品。 - (a)所定のパターン状に配置された電気接点を有する表面、および前記表面の一部に層として配置された事前塗布されたダイ取り付け用接着性材料であって、
(i)ベンズオキサジン含有化合物の1種または2種以上を、必要により任意成分として熱可塑性エラストマーと共に含有するダイ取り付け用接着性材料
を備えたキャリヤー基板を含む製品。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US38964202P | 2002-06-17 | 2002-06-17 | |
PCT/US2003/019052 WO2003107427A1 (en) | 2002-06-17 | 2003-06-17 | Interlayer dielectric and pre-applied die attach adhesive materials |
Publications (2)
Publication Number | Publication Date |
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JP2005532678A true JP2005532678A (ja) | 2005-10-27 |
JP2005532678A5 JP2005532678A5 (ja) | 2006-08-24 |
Family
ID=29736665
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JP2004514137A Pending JP2005532678A (ja) | 2002-06-17 | 2003-06-17 | 層間誘電体および事前塗布ダイ取り付け用接着性材料 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7312534B2 (ja) |
JP (1) | JP2005532678A (ja) |
KR (2) | KR101136719B1 (ja) |
CN (2) | CN100449776C (ja) |
AU (1) | AU2003276729A1 (ja) |
WO (1) | WO2003107427A1 (ja) |
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Also Published As
Publication number | Publication date |
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CN1663048A (zh) | 2005-08-31 |
CN101488480A (zh) | 2009-07-22 |
US20050008832A1 (en) | 2005-01-13 |
KR101164671B1 (ko) | 2012-07-11 |
US7312534B2 (en) | 2007-12-25 |
KR20100121552A (ko) | 2010-11-17 |
KR20050010933A (ko) | 2005-01-28 |
AU2003276729A1 (en) | 2003-12-31 |
US7550825B2 (en) | 2009-06-23 |
US20070278683A1 (en) | 2007-12-06 |
CN100449776C (zh) | 2009-01-07 |
WO2003107427A1 (en) | 2003-12-24 |
KR101136719B1 (ko) | 2012-04-20 |
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