TW202123328A - 碳化矽基板及碳化矽基板之製造方法 - Google Patents

碳化矽基板及碳化矽基板之製造方法 Download PDF

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Publication number
TW202123328A
TW202123328A TW109119736A TW109119736A TW202123328A TW 202123328 A TW202123328 A TW 202123328A TW 109119736 A TW109119736 A TW 109119736A TW 109119736 A TW109119736 A TW 109119736A TW 202123328 A TW202123328 A TW 202123328A
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TW
Taiwan
Prior art keywords
silicon carbide
main surface
square
area
radial direction
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TW109119736A
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English (en)
Chinese (zh)
Inventor
本家翼
Original Assignee
日商住友電氣工業股份有限公司
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Publication of TW202123328A publication Critical patent/TW202123328A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW109119736A 2019-06-13 2020-06-11 碳化矽基板及碳化矽基板之製造方法 TW202123328A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019110318 2019-06-13
JP2019-110318 2019-06-13

Publications (1)

Publication Number Publication Date
TW202123328A true TW202123328A (zh) 2021-06-16

Family

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Application Number Title Priority Date Filing Date
TW109119736A TW202123328A (zh) 2019-06-13 2020-06-11 碳化矽基板及碳化矽基板之製造方法

Country Status (5)

Country Link
US (1) US20220170179A1 (https=)
JP (1) JPWO2020250678A1 (https=)
CN (1) CN114026672B (https=)
TW (1) TW202123328A (https=)
WO (1) WO2020250678A1 (https=)

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410925B2 (ja) * 1997-05-23 2003-05-26 ロデール・ニッタ株式会社 両面研磨機のキャリア
KR100533528B1 (ko) * 2000-11-16 2005-12-05 신에츠 한도타이 가부시키가이샤 웨이퍼의 형상 평가방법 및 장치 및 디바이스의 제조방법,웨이퍼 및 웨이퍼의 선별방법
US7422634B2 (en) * 2005-04-07 2008-09-09 Cree, Inc. Three inch silicon carbide wafer with low warp, bow, and TTV
WO2009139140A1 (ja) * 2008-05-13 2009-11-19 パナソニック株式会社 半導体素子
JP2010029996A (ja) * 2008-07-30 2010-02-12 Toray Ind Inc 研磨パッド
JP5347807B2 (ja) * 2009-07-30 2013-11-20 新日鐵住金株式会社 半導体基板の研磨方法及び研磨装置
TWI510449B (zh) * 2010-06-22 2015-12-01 Sumitomo Electric Industries Manufacturing method of light emitting element
JP5621702B2 (ja) * 2011-04-26 2014-11-12 信越半導体株式会社 半導体ウェーハ及びその製造方法
JP6083129B2 (ja) * 2012-04-27 2017-02-22 富士電機株式会社 半導体装置の製造方法および製造装置
US9018639B2 (en) * 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
JP2014203833A (ja) * 2013-04-01 2014-10-27 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5803979B2 (ja) * 2013-05-29 2015-11-04 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
JP6107453B2 (ja) * 2013-06-13 2017-04-05 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6106535B2 (ja) * 2013-06-24 2017-04-05 昭和電工株式会社 ＳｉＣ基板の製造方法
US9508611B2 (en) * 2013-08-14 2016-11-29 Hitachi, Ltd. Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element
JP2015053428A (ja) * 2013-09-09 2015-03-19 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5839069B2 (ja) * 2014-03-28 2016-01-06 住友電気工業株式会社 炭化珪素単結晶基板、炭化珪素エピタキシャル基板およびこれらの製造方法
JP6331634B2 (ja) * 2014-04-17 2018-05-30 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2015229748A (ja) * 2014-06-06 2015-12-21 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP6623759B2 (ja) * 2014-09-08 2019-12-25 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
JP6287774B2 (ja) * 2014-11-19 2018-03-07 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016124043A (ja) * 2014-12-26 2016-07-11 東洋ゴム工業株式会社 研磨パッド
US9978651B2 (en) * 2015-05-11 2018-05-22 Sumitomo Electric Industries, Ltd. Silicon carbide single crystal substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide semiconductor device
JP2016028009A (ja) * 2015-09-02 2016-02-25 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
JP6619685B2 (ja) * 2016-04-19 2019-12-11 株式会社ディスコ ＳｉＣウエーハの加工方法
JP6497358B2 (ja) * 2016-06-22 2019-04-10 株式会社デンソー 炭化珪素半導体装置の製造方法
JP6748572B2 (ja) * 2016-12-28 2020-09-02 昭和電工株式会社 ｐ型ＳｉＣエピタキシャルウェハ及びその製造方法
JP7012454B2 (ja) * 2017-04-27 2022-01-28 株式会社岡本工作機械製作所 静電吸着チャックの製造方法並びに半導体装置の製造方法
US11322349B2 (en) * 2017-05-19 2022-05-03 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and silicon carbide epitaxial substrate

Also Published As

Publication number Publication date
CN114026672B (zh) 2025-03-11
JPWO2020250678A1 (https=) 2020-12-17
WO2020250678A1 (ja) 2020-12-17
US20220170179A1 (en) 2022-06-02
CN114026672A (zh) 2022-02-08

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