JPWO2020250678A1 - - Google Patents

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Publication number
JPWO2020250678A1
JPWO2020250678A1 JP2021525982A JP2021525982A JPWO2020250678A1 JP WO2020250678 A1 JPWO2020250678 A1 JP WO2020250678A1 JP 2021525982 A JP2021525982 A JP 2021525982A JP 2021525982 A JP2021525982 A JP 2021525982A JP WO2020250678 A1 JPWO2020250678 A1 JP WO2020250678A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021525982A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020250678A1 publication Critical patent/JPWO2020250678A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2021525982A 2019-06-13 2020-05-27 Pending JPWO2020250678A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019110318 2019-06-13
PCT/JP2020/020904 WO2020250678A1 (ja) 2019-06-13 2020-05-27 炭化珪素基板および炭化珪素基板の製造方法

Publications (1)

Publication Number Publication Date
JPWO2020250678A1 true JPWO2020250678A1 (https=) 2020-12-17

Family

ID=73781911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021525982A Pending JPWO2020250678A1 (https=) 2019-06-13 2020-05-27

Country Status (5)

Country Link
US (1) US20220170179A1 (https=)
JP (1) JPWO2020250678A1 (https=)
CN (1) CN114026672B (https=)
TW (1) TW202123328A (https=)
WO (1) WO2020250678A1 (https=)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10315123A (ja) * 1997-05-23 1998-12-02 Rodel Nitta Kk 両面研磨機のキャリア
JP2008535761A (ja) * 2005-04-07 2008-09-04 クリー インコーポレイテッド 歪み、反り、及びｔｔｖが少ない７５ミリメートル炭化珪素ウェハ
JP2010029996A (ja) * 2008-07-30 2010-02-12 Toray Ind Inc 研磨パッド
JP2011035023A (ja) * 2009-07-30 2011-02-17 Nippon Steel Corp 半導体基板の研磨方法及び研磨装置
JP2015005702A (ja) * 2013-06-24 2015-01-08 昭和電工株式会社 ＳｉＣ基板の製造方法
JP2015229748A (ja) * 2014-06-06 2015-12-21 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP2016501809A (ja) * 2012-10-26 2016-01-21 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 平坦なＳｉＣ半導体基板
JP2016124043A (ja) * 2014-12-26 2016-07-11 東洋ゴム工業株式会社 研磨パッド
JP2016210680A (ja) * 2015-05-11 2016-12-15 住友電気工業株式会社 炭化珪素単結晶基板、炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2018186217A (ja) * 2017-04-27 2018-11-22 株式会社岡本工作機械製作所 静電吸着チャック及びその製造方法並びに半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
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KR100533528B1 (ko) * 2000-11-16 2005-12-05 신에츠 한도타이 가부시키가이샤 웨이퍼의 형상 평가방법 및 장치 및 디바이스의 제조방법,웨이퍼 및 웨이퍼의 선별방법
WO2009139140A1 (ja) * 2008-05-13 2009-11-19 パナソニック株式会社 半導体素子
TWI510449B (zh) * 2010-06-22 2015-12-01 Sumitomo Electric Industries Manufacturing method of light emitting element
JP5621702B2 (ja) * 2011-04-26 2014-11-12 信越半導体株式会社 半導体ウェーハ及びその製造方法
JP6083129B2 (ja) * 2012-04-27 2017-02-22 富士電機株式会社 半導体装置の製造方法および製造装置
JP2014203833A (ja) * 2013-04-01 2014-10-27 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5803979B2 (ja) * 2013-05-29 2015-11-04 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
JP6107453B2 (ja) * 2013-06-13 2017-04-05 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US9508611B2 (en) * 2013-08-14 2016-11-29 Hitachi, Ltd. Semiconductor inspection method, semiconductor inspection device and manufacturing method of semiconductor element
JP2015053428A (ja) * 2013-09-09 2015-03-19 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP5839069B2 (ja) * 2014-03-28 2016-01-06 住友電気工業株式会社 炭化珪素単結晶基板、炭化珪素エピタキシャル基板およびこれらの製造方法
JP6331634B2 (ja) * 2014-04-17 2018-05-30 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6623759B2 (ja) * 2014-09-08 2019-12-25 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
JP6287774B2 (ja) * 2014-11-19 2018-03-07 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016028009A (ja) * 2015-09-02 2016-02-25 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
JP6619685B2 (ja) * 2016-04-19 2019-12-11 株式会社ディスコ ＳｉＣウエーハの加工方法
JP6497358B2 (ja) * 2016-06-22 2019-04-10 株式会社デンソー 炭化珪素半導体装置の製造方法
JP6748572B2 (ja) * 2016-12-28 2020-09-02 昭和電工株式会社 ｐ型ＳｉＣエピタキシャルウェハ及びその製造方法
US11322349B2 (en) * 2017-05-19 2022-05-03 Sumitomo Electric Industries, Ltd. Silicon carbide substrate and silicon carbide epitaxial substrate

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10315123A (ja) * 1997-05-23 1998-12-02 Rodel Nitta Kk 両面研磨機のキャリア
JP2008535761A (ja) * 2005-04-07 2008-09-04 クリー インコーポレイテッド 歪み、反り、及びｔｔｖが少ない７５ミリメートル炭化珪素ウェハ
JP2010029996A (ja) * 2008-07-30 2010-02-12 Toray Ind Inc 研磨パッド
JP2011035023A (ja) * 2009-07-30 2011-02-17 Nippon Steel Corp 半導体基板の研磨方法及び研磨装置
JP2016501809A (ja) * 2012-10-26 2016-01-21 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 平坦なＳｉＣ半導体基板
JP2015005702A (ja) * 2013-06-24 2015-01-08 昭和電工株式会社 ＳｉＣ基板の製造方法
JP2015229748A (ja) * 2014-06-06 2015-12-21 コニカミノルタ株式会社 Ｃｍｐ用研磨液
JP2016124043A (ja) * 2014-12-26 2016-07-11 東洋ゴム工業株式会社 研磨パッド
JP2016210680A (ja) * 2015-05-11 2016-12-15 住友電気工業株式会社 炭化珪素単結晶基板、炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2018186217A (ja) * 2017-04-27 2018-11-22 株式会社岡本工作機械製作所 静電吸着チャック及びその製造方法並びに半導体装置の製造方法

Also Published As

Publication number Publication date
CN114026672B (zh) 2025-03-11
WO2020250678A1 (ja) 2020-12-17
US20220170179A1 (en) 2022-06-02
CN114026672A (zh) 2022-02-08
TW202123328A (zh) 2021-06-16

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