TW202101672A - 半導體裝置之製造方法 - Google Patents
半導體裝置之製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 58
- 239000004020 conductor Substances 0.000 claims abstract description 100
- 125000006850 spacer group Chemical group 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 70
- 230000008569 process Effects 0.000 claims description 45
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 23
- 229910052721 tungsten Inorganic materials 0.000 claims description 23
- 239000010937 tungsten Substances 0.000 claims description 22
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 31
- 230000000052 comparative effect Effects 0.000 description 24
- 238000001312 dry etching Methods 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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Abstract
本發明之目的係以良好精確度對於信號延遲少之半導體裝置進行加工,並使半導體裝置之生產性提高。
本發明之半導體裝置之製造方法,包含平坦化製程、積層製程、孔形成製程、埋入製程、及去除製程。在平坦化製程,藉由將於形成在積層於基板上之絕緣膜上且以間隔膜包圍之區域內的第1孔埋入有導電材料之基板的表面平坦化,而使埋入至第1孔之導電材料露出。在積層製程,於基板之表面積層遮罩膜。在孔形成製程,於遮罩膜形成第2孔而使埋入至第1孔之導電材料的頂面之至少一部分露出。在埋入製程,將導電材料埋入至第2孔。在去除製程,去除遮罩膜。
Description
本發明之各種樣態及實施形態係關於一種半導體裝置之製造方法。
舉例而言,於下述專利文獻1揭示了一種技術,該技術係在DRAM(Dynamic Random Access Memory:動態隨機存取記憶體)等半導體裝置之製造製程,於用以連接電容器與擴散層之接觸插栓上形成接觸墊。可以接觸墊,吸收因形成構成電容器的溝之際的加工引起之溝位置偏移。
[先前技術文獻]
[專利文獻1]美國專利申請公開說明書第2018/0040561號
[發明欲解決之課題]
本發明提供可以良好精確度對於信號延遲少之半導體裝置進行加工,並且可使半導體裝置之生產性提高的半導體裝置之製造方法。
[解決問題之手段]
本發明的一樣態係半導體裝置之製造方法,包含平坦化製程、積層製程、孔形成製程、埋入製程、及去除製程。在平坦化製程,藉由將於形成在積層於基板上之絕緣膜上且以間隔膜包圍之區域內的第1孔埋入有導電材料之基板的表面平坦化,而使埋入至第1孔之導電材料露出。在積層製程,於基板之表面積層遮罩膜。在孔形成製程,於遮罩膜形成第2孔而使埋入至第1孔之導電材料的頂面之至少一部分露出。在埋入製程,將導電材料埋入至第2孔。在去除製程,去除遮罩膜。
[發明之效果]
根據本發明之各種樣態及實施形態,可生產信號延遲少之半導體裝置,並且可使半導體裝置之生產性提高。
[用於實施發明之形態]
以下,就揭示的半導體裝置之製造方法的實施形態,依據圖式,詳細說明。此外,並非用以下實施形態,限定揭示的半導體裝置之製造方法。
順帶一提,在以往之DRAM等半導體裝置之接觸墊的製造方法,藉蝕刻積層於接觸插栓上之導電材料,而形成接觸墊。此時,為以蝕刻去除保留作為接觸墊之部分的導電材料以外之導電材料,而要求更細微之加工。當以蝕刻形成接觸墊時,使用以例如使用了EUV(Extreme ultraviolet lithography:超紫外線平版印刷術)光之NTD(Negative Tone Development:負型顯影)圖形化之光阻層。
由於用於使用EUV光之NTD的抗蝕材料含有金屬,故比起未含有金屬之抗蝕材料,曝光時間較長。當曝光時間長,半導體裝置之生產性便降低。
又,以蝕刻去除保留作為接觸墊之部分的導電材料以外之導電材料時,將轉印有光阻層之圖形的遮罩膜作為遮罩來蝕刻導電材料。然而,由於遮罩膜對導電材料之選擇比沒那麼高,故需使遮罩膜厚。因此,不易以高精確度進行遮罩膜之蝕刻。
又,以蝕刻去除保留作為接觸墊之部分的導電材料以外之導電材料時,有接觸插栓之一部分亦同時被去除的情形。因此,接觸插栓變細,電阻值上升。當接觸插栓之電阻值上升,流過接觸插栓之信號的延遲便增加。
是故,本發明提供可以良好精確度對於信號延遲少之半導體裝置進行加工,並且可使半導體裝置之生產性提高的技術。
[半導體裝置之製造方法]
圖1係顯示本發明一實施形態的半導體裝置之製造方法的一例之流程圖。在本實施形態,以圖1之流程圖所示的程序,製造用於半導體裝置之製造的晶圓W。以下,一面參照圖2~圖7,一面說明半導體裝置之製造方法的一例。
首先,準備處理對象之晶圓W(S10)。處理對象之晶圓W係如圖2A及圖2B所示之構造。圖2A係顯示用於本發明一實施形態之半導體裝置的製造之晶圓W的一例之俯視圖,圖2B係其A-A截面圖。
如圖2A及圖2B所示之晶圓W具有導入有例如p型雜質之矽等的半導體亦即半導體基板10。於半導體基板10之表面形成有以多晶矽等構成之接觸層11,於接觸層11上積層有鎢等之電極膜12,於電極膜12上積層有氮化矽膜等之絕緣膜13。
接觸層11、電極膜12、及絕緣膜13以間隔件14包覆。間隔件14具有例如氧化矽膜被氮化矽膜包夾之構造。具有以間隔件14包覆之接觸層11、電極膜12及絕緣膜13的構造物140於y軸方向隔著預定間隔配置,分別於x軸方向延伸。
又,於在y軸方向相鄰之構造物140之間的凹部埋入有絕緣膜13,在絕緣膜13,於x軸方向以預定間隔形成有孔30。孔30係第1孔之一例。在孔30內,於半導體基板10上積層有鈷矽化物等之金屬膜15。又,各構造物140及孔30以氮化鈦等之阻隔膜16包覆。
阻隔膜16以例如ALD(Atomic Layer Deposition:原子層沉積)法積層。舉例而言,藉由將晶圓W之溫度控制為200℃~600℃,交互進行對晶圓W之表面的TDMAT(Tetrakis (DiMethylAmino) Titanium:肆(二甲基胺基)鈦)氣體之供給與NH3
氣體之供給,而積層例如0.5nm~2.0nm之厚度的阻隔膜16。此外,阻隔膜16亦可以CVD(Chemical Vapor Deposition:化學氣相沉積)法積層。又,阻隔膜16除了氮化鈦以外,亦可為氮化鉭等。
然後,於晶圓W之表面積層導電材料17,於各孔30內埋入導電材料17。在本實施形態中,導電材料17係例如鎢。導電材料17以例如CVD法積層。舉例而言,藉由將晶圓W之溫度控制為300℃~600℃,將WF6
氣體、SiH4
氣體、及Ar氣體之混合氣體供至晶圓W之表面,而於晶圓W上積層例如10nm~30nm之厚度的導電材料17。此外,導電材料17亦可以ALD法積層。又,原料氣體可使用WCl4
氣體等取代WF6
氣體,亦可使用H2
氣體或CH4
氣體等取代SiH4
氣體。
接著,以CMP(Chemical Mechanical Polishing:化學機械研磨)等將晶圓W之表面平坦化(S11)。步驟S11係平坦化製程之一例。藉此,如圖3A及圖3B所示,去除晶圓W之頂面的導電材料17,埋入至孔30之導電材料17露出。又,在晶圓W之頂面,除了導電材料17外,絕緣膜13、間隔件14及阻隔膜16亦露出。圖3A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓W之一例的俯視圖,圖3B係其A-A截面圖。
然後,於晶圓W上積層遮罩膜20(S12)。步驟S12係積層製程之一例。接著,於遮罩膜20上積層反射防止膜24,於反射防止膜24上積層光阻層25。反射防止膜24係例如氮氧化矽膜。光阻層25以用於使用EUV光之PTD(Positive Tone Development:正型顯影)且不含金屬之材料構成。之後,如圖4A及圖4B所示,以使用EUV光之PTD將光阻層25圖形化(S13)。圖4A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓W之一例的俯視圖,圖4B係其A-A截面圖。
在本實施形態,遮罩膜20包含第1遮罩膜21、第2遮罩膜22、及蝕刻停止膜23。第1遮罩膜21係例如SOC(Spin On Carbon:旋塗式碳)膜。第2遮罩膜22係例如氧化矽膜。蝕刻停止膜23係例如多晶矽膜。又,在本實施形態,如圖4A及圖4B所示,以使用EUV光之PTD,去除光阻層25之一部分,而形成順著接觸墊之形狀的開口。
接著,將光阻層25作為遮罩來蝕刻遮罩膜20(S14)。然後,以灰化等去除反射防止膜24及光阻層25。步驟S12~S14係孔形成製程之一例。藉此,如圖5A及圖5B所示,於遮罩膜20形成順著光阻層25之形狀的孔31,藉由孔31,遮罩膜20之下方的導電材料17之一部分露出。圖5A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓W之一例的俯視圖,圖5B係其A-A截面圖。孔31係第2孔之一例。
第1遮罩膜21、第2遮罩膜22及蝕刻停止膜23之蝕刻藉例如使用電漿之乾蝕刻法進行。在第1遮罩膜21之蝕刻,例如將晶圓W之溫度控制為100℃~350℃,在搬入了晶圓W之電漿處理裝置內生成CO氣體之電漿例如20~60秒鐘。此外,蝕刻氣體亦可使用例如含有氮原子或氫原子之氣體、抑或含有從該等氣體群選擇之二種以上的氣體之混合氣體取代CO氣體。
在第2遮罩膜22之蝕刻,例如將晶圓W之溫度控制為20℃~100℃,在搬入了晶圓W之電漿處理裝置內生成C4
F8
氣體之電漿例如5~60秒鐘。此外,蝕刻氣體亦可使用例如CF2
氣體、CF3
氣體、C2
F2
氣體、C2
F4
氣體、C2
F6
氣體、Ar氣體、CHF3
氣體、O2
氣體、或O3
氣體、抑或含有從該等氣體群選擇之二種以上的氣體之混合氣體取代C4
F8
氣體。
在蝕刻停止膜23之蝕刻,例如將晶圓W之溫度控制為20℃~120℃,在搬入了晶圓W之電漿處理裝置內生成C12
氣體及HBr氣體之混合氣體的電漿例如5~300秒鐘。此外,蝕刻氣體可使用例如SF6
氣體取代Cl2
氣體及HBr氣體之混合氣體。
又,第1遮罩膜21、第2遮罩膜22、及蝕刻停止膜23之蝕刻的電漿源可使用例如電容耦合型電漿(CCP)、感應耦合電漿(ICP)、微波激發表面波電漿(SWP)、電子迴旋共振電漿(ECRP)、或螺旋波激發電漿(HWP)等。
接著,將導電材料18埋入至形成於遮罩膜20之孔31內(S15)。步驟S15係埋入製程之一例。藉此,如圖6A及圖6B所示,將導電材料18埋入至孔31內。圖6A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓W之一例的俯視圖,圖6B係其A-A截面圖。導電材料18係與導電材料17相同之材料,例如為鎢。在步驟S15,以選擇成長積層導電材料18。藉此,於孔31內之阻隔膜16及導電材料17上積層導電材料18,但不於第2遮罩膜22上及孔31內之絕緣膜13上積層導電材料18。
導電材料18藉例如交互反複地進行CVD法與使用電漿之乾蝕刻法的方法,選擇性地積層於孔31內之導電材料17上。舉例而言,將晶圓W之溫度控制為450℃~550℃,執行使用WCl5
氣體之CVD法預定時間,之後,執行使用H2
氣體之電漿的乾蝕刻法預定時間。CVD法之WCl5
氣體的供給量為例如50~500mg/min。又,乾蝕刻法之H2
氣體的流量為例如1000~9000sccm。包含一次CVD法與一次乾蝕刻法之一週期的長度為例如0.2秒~10秒。一週期之CVD法的期間與乾蝕刻法之期間的比為例如1比1。在本實施形態之導電材料18的積層,包含一次CVD法與一次乾蝕刻法的週期反覆例如數百次左右。
此外,CVD法之原料氣體亦可使用WCl6
氣體或WF6
氣體等取代WCl5
氣體。又,乾蝕刻法之蝕刻氣體亦可使用SiH4
氣體等取代H2
氣體。又,乾蝕刻法之電漿源可使用例如電容耦合型電漿(CCP)、感應耦合電漿(ICP)、微波激發表面波電漿(SWP)、電子迴旋共振電漿(ECRP)、或螺旋波激發電漿(HWP)等。
接著,以CMP等將晶圓W之表面平坦化(S16)。然後,以使用電漿之乾蝕刻法等去除第2遮罩膜22及蝕刻停止膜23(S17)。步驟S17係去除製程之一例。第2遮罩膜22及蝕刻停止膜23之去除的蝕刻條件與在步驟S14說明之條件相同。藉此,如圖7A及圖7B所示,於晶圓W上形成具有接觸墊之功能的導電材料18。圖7A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓W之一例的俯視圖,圖7B係其A-A截面圖。
[實驗結果]
在此,就關於鎢之選擇成長的實驗結果作說明。圖8係顯示用於實驗之晶圓W’的一例之截面圖。圖8所例示之晶圓W’具有基板40、基底膜41及氧化矽膜42。於氧化矽膜42形成有複數之溝,在溝之底部基地膜41露出。使用圖8所例示之晶圓W’,進行了以交互反覆CVD法與使用電漿之乾蝕刻法的方法使鎢膜43積層於基底膜41上之實驗。基底膜41使用氮化矽膜、氧化矽膜、鎢膜或氮化鈦膜。
圖9係顯示實驗結果之一例的圖。如圖9所示,基底膜41為氮化矽膜或氧化矽膜時,即使反覆包含CVD法與乾蝕刻法之週期,亦未於基底膜41上積層鎢膜43。另一方面,基底膜41為鎢膜或氮化鈦膜時,於基底膜41上積層鎢膜43,鎢膜43之厚度按包含CVD法與乾蝕刻法之週期的次數增加。
因而,藉反覆包含CVD法與乾蝕刻法之週期,可進行鎢膜不於氮化矽膜及氧化矽膜上成長,鎢膜於鎢膜及氮化鈦膜上成長之所謂選擇成長。
在此,在圖1之步驟S15,藉反覆包含CVD法與乾蝕刻法之週期,而於孔31內積層鎢亦即導電材料18(參照圖6A及圖6B)。此時,藉選擇成長,導電材料18在鎢亦即導電材料17及氮化鈦亦即阻隔膜16上成長。另一方面,導電材料18不在氧化矽膜亦即第2遮罩膜22上、氮化矽膜亦即絕緣膜13、以及包含氧化矽膜及氮化矽膜之間隔件14上成長。
又,藉導電材料18在埋入至孔30內之導電材料17上選擇成長,導電材料18與埋入至孔30內之導電材料17密合。藉此,可減低導電材料18與埋入至孔30內的導電材料17之間的電阻值,而可減低在導電材料18與埋入至孔30內的導電材料17之間流動的信號之延遲。
又,導電材料18不在包含氧化矽膜及氮化矽膜之絕緣膜13與間隔件14上成長。藉此,導電材料18內之鎢原子不致到達絕緣膜13及間隔件14,而可防止鎢原子侵入至絕緣膜13及間隔件14內之金屬污染。
[比較例]
在此,就比較例之半導體裝置的製造程序,一面參照圖10~圖13,一面說明。在比較例之半導體裝置的製造程序,首先,準備與如圖2A及圖2B所示之晶圓W為相同的構造之晶圓W”。
接著,於晶圓W”上積層遮罩膜200。於遮罩膜200上積層反射防止膜203,於反射防止膜203上積層光阻層204。反射防止膜203係例如氮氧化矽膜。光阻層204以用於使用EUV光之NTD(Negative Tone Development:負型顯影)且含有金屬之材料構成。然後,如圖10A及圖10B所示,以使用EUV光之NTD將光阻層204圖形化。圖10A係顯示用於比較例的半導體裝置之製造的晶圓W”之一例的俯視圖,圖10B係其A-A截面圖。
在比較例,遮罩膜200包含第1遮罩膜201及第2遮罩膜202。第1遮罩膜201係例如非晶碳膜。第2遮罩膜202係例如氮化矽膜。又,在比較例,如圖10A及圖10B所示,將光阻層204圖形化成形成為對應接觸墊之形成的形狀。
然後,將光阻層204作為遮罩,蝕刻反射防止膜203及第1遮罩膜201,將蝕刻後之第1遮罩膜201作為遮罩來蝕刻第2遮罩膜202。第1遮罩膜201及第2遮罩膜202之蝕刻藉例如使用電漿之乾蝕刻法進行。藉此,晶圓W”之狀態形成為如圖11A及圖11B般。圖11A係顯示用於比較例的半導體裝置之製造的晶圓W”之一例的俯視圖,圖11B係其A-A截面圖。
接著,將第1遮罩膜201及第2遮罩膜202作為遮罩來蝕刻阻隔膜16及導電材料17。阻隔膜16及導電材料17之蝕刻藉例如使用電漿之乾蝕刻法進行。藉此,晶圓W”之狀態形成為如圖12A及圖12B般。圖12A係顯示用於比較例的半導體裝置之製造的晶圓W”之一例的俯視圖,圖12B係其A-A截面圖。
然後,藉例如使用電漿之乾蝕刻法,去除第1遮罩膜201及第2遮罩膜202。藉此,晶圓W”之狀態形成為如圖13A及圖13B般。圖13A係顯示用於比較例的半導體裝置之製造的晶圓W”之一例的俯視圖,圖13B係其A-A截面圖。在圖13B,導電材料17a具有接觸墊之功能,孔30內之導電材料17b具有接觸插栓之功能。
在此,圖13B所例示之比較例的W”於阻隔膜16及導電材料17被蝕刻之際,間隔件14之上部被除掉。因而,此後,於導電材料17a間積層氮化矽膜等絕緣膜時,具有接觸墊之功能的導電材料17b之寄生電容增大。又,間隔件14為被氮化矽膜包夾之氣隙時,當於相鄰的導電材料17a之間積層氮化矽膜等絕緣膜,氣隙被絕緣膜填埋。因此,具有接觸墊之功能的導電材料17b之寄生電容更大。
又,圖13B所例示之比較例的晶圓W”因阻隔膜16及導電材料17被蝕刻之際的過蝕刻,導電材料17b之一部分被除掉,導電材料17b的一部分變細。當導電材料17b變細時,導電材料17b之電阻值增加。當導電材料17b之電阻值增加時,流過導電材料17b之信號的延遲、耗費電力、及發熱量便增加。
相對於此,本實施形態之晶圓W在以蝕刻去除蝕刻停止膜23之際的條件下,間隔件14幾乎未被蝕刻(參照圖5B)。因此,埋入至孔30內且具有接觸插栓之功能的導電材料17之寄生電容以間隔件14抑制為低。
又,在本實施形態之晶圓W具有接觸插栓的功能之孔30內的導電材料17在以蝕刻去除蝕刻停止膜23之際的條件下,幾乎未被蝕刻(參照圖5B)。因此,未產生沿著xy平面之方向的接觸插栓之除掉,而不致產生接觸插栓之電阻值的增加。因此,可抑制在流過具有接觸插栓之功能的導電材料17之信號的延遲、耗費電力、及發熱量之增加。
又,在比較例,為蝕刻作為接觸墊之導電材料17,需形成厚之硬遮罩。當硬遮罩之厚度厚時,不易維持以蝕刻圖形化之形狀的精確度。相對於此,在本實施形態中,藉使作為接觸墊之導電材料17積層於順著接觸墊形狀形成之孔31內而形成。因此,由於不需蝕刻導電材料17,故可使遮罩膜薄。藉此,可易維持以蝕刻圖形化之形狀的精確度。
又,在比較例的半導體裝置之製造方法,光阻層204以用於以EUV光所行的NTD之材料構成,且含有金屬。另一方面,本實施形態之光阻層25以用於以EUV光所行的PTD之材料構成,不含金屬。因此,由於光阻層25可以少於光阻層204之曝光量形成預定圖形,故可使曝光時間短。藉此,可刪減半導體裝置之製造所需的時間。
具體而言,在本實施形態的半導體裝置之製造方法,接觸墊之形成所需的時間比起比較例,刪減40%左右。藉此,在本實施形態之半導體裝置的製造方法,每單位時間可製造之半導體裝置的片數係比較例之約1.7倍。因而,本實施形態的半導體裝置之製造方法可較比較例提高半導體裝置之生產性。
以上,就一實施形態作了說明。如上述,本實施形態的半導體裝置之製造方法包含平坦化製程、積層製程、孔形成製程、埋入製程、及去除製程。在平坦化製程,藉由將於形成在積層於晶圓W上之絕緣膜13上且以間隔件14包圍之區域內的孔30埋入有導電材料17之晶圓W的表面平坦化,而使埋入至孔30之導電材料17露出。在積層製程,於晶圓W之表面積層遮罩膜20。在孔形成製程,於遮罩膜20將孔31形成為使埋入至孔30之導電材料17的頂面之至少一部分露出。在埋入製程,將導電材料18埋入至孔31。在去除製程,去除遮罩膜20。藉此,可以良好精確度對於信號延遲少之半導體裝置進行加工,並且可使半導體裝置之生產性提高。
又,在上述實施形態中,導電材料係鎢。藉此,可於接觸插栓上形成接觸墊。
又,在上述實施形態,在埋入製程,以積層於導電材料17上,不積層於絕緣膜13上之選擇成長,將導電材料18埋入至孔31。藉此,可易於接觸插栓上形成接觸墊。
又,在上述實施形態,在埋入製程,交互反複地進行將含鎢氣體供至晶圓W之表面的製程、及將含氫氣體之電漿供至晶圓W之表面的製程。藉此,可使導電材料18選擇成長於導電材料17上。
再者,在上述實施形態,含鎢氣體係WCl5
氣體、WCl6
氣體或WF6
氣體,含氫氣體係H2
氣體或SiH4
氣體。藉此,可使導電材料18選擇成長於導電材料17上。
又,在上述實施形態,孔形成製程具有於遮罩膜20上積層光阻層25之製程、以使用EUV光之PTD,於光阻層25形成順著孔31之形狀的開口之製程、藉由將形成有開口之光阻層25作為遮罩來蝕刻遮罩膜20,而於遮罩膜20形成孔31之製程。藉此,比起以使用EUV光之NTD將光阻層圖形化之情形,可刪減曝光時間。
[其他]
此外,揭示於本案之技術並不限於上述實施形態,可在其要旨之範圍內進行各樣變形。
舉例而言,在上述實施形態,在步驟S15,以選擇成長於孔31內積層導電材料18,揭示之技術不限於此。舉例而言,亦可以阻隔膜16保護孔31內之絕緣膜13及間隔件14之後,以例如CVD等於孔31內積層導電材料18。如此進行,亦可使作為接觸墊之導電材料18積層於孔30內之導電材料17上。
又,在上述實施形態,以EUV光將光阻層25圖形化,揭示之技術不限於此,亦可使用ArF準分子雷射光等來圖形化。此外,使用ArF準分子雷射光等來圖形化時,光阻層25以適合ArF準分子雷射光等之圖形化的材料構成。
此外,此次揭示之實施形態應視為所有點係例示並非限制。實際上,上述實施形態可以多樣之形態實現。又,上述實施形態亦可在不脫離附加之申請專利範圍及其旨趣下,以各種形態省略、置換、變更。
10:半導體基板
11:接觸層
12:電極膜
13:絕緣膜
14:間隔件
15:金屬膜
16:阻隔膜
17:導電材料
17a:導電材料
17b:導電材料
18:導電材料
20:遮罩膜
21:第1遮罩膜
22:第2遮罩膜
23:蝕刻停止膜
24:反射防止膜
25:光阻層
30:孔
31:孔
40:基板
41:基底膜
42:氧化矽膜
43:鎢膜
140:構造物
200:遮罩膜
201:第1遮罩膜
202:第2遮罩膜
203:反射防止膜
204:光阻層
S10:步驟
S11:步驟
S12:步驟
S13:步驟
S14:步驟
S15:步驟
S16:步驟
S17:步驟
W:晶圓
W’:晶圓
W”:晶圓
X:方向
Y:方向
圖1係顯示本發明一實施形態的半導體裝置之製造方法的一例之流程圖。
圖2A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的俯視圖。
圖2B係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖3A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的俯視圖。
圖3B係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖4A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的俯視圖。
圖4B係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖5A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的俯視圖。
圖5B係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖6A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的俯視圖。
圖6B係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖7A係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的俯視圖。
圖7B係顯示用於本發明一實施形態的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖8係顯示用於實驗之晶圓的一例之截面圖。
圖9係顯示實驗結果之一例的圖。
圖10A係顯示用於比較例的半導體裝置之製造的晶圓之一例的俯視圖。
圖10B係顯示用於比較例的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖11A係顯示用於比較例的半導體裝置之製造的晶圓之一例的俯視圖。
圖11B係顯示用於比較例的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖12A係顯示用於比較例的半導體裝置之製造的晶圓之一例的俯視圖。
圖12B係顯示用於比較例的半導體裝置之製造的晶圓之一例的A-A截面圖。
圖13A係顯示用於比較例的半導體裝置之製造的晶圓之一例的俯視圖。
圖13B係顯示用於比較例的半導體裝置之製造的晶圓之一例的A-A截面圖。
S10:步驟
S11:步驟
S12:步驟
S13:步驟
S14:步驟
S15:步驟
S16:步驟
S17:步驟
Claims (6)
- 一種半導體裝置之製造方法,包含: 平坦化製程,藉由將於形成在積層於基板上之絕緣膜上且以間隔膜包圍之區域內的第1孔埋入有導電材料之該基板的表面平坦化,而使埋入至該第1孔之該導電材料露出; 積層製程,於該基板之表面積層遮罩膜; 孔形成製程,於該遮罩膜形成第2孔而使埋入至該第1孔之該導電材料的頂面之至少一部分露出; 埋入製程,將該導電材料埋入至該第2孔;及 去除製程,去除該遮罩膜。
- 如請求項1之半導體裝置之製造方法,其中, 該導電材料係鎢。
- 如請求項2之半導體裝置之製造方法,其中, 在該埋入製程,以積層於該導電材料上而不積層於該絕緣膜上之選擇成長方式,將該導電材料埋入至該第2孔。
- 如請求項3之半導體裝置之製造方法,其中, 在該埋入製程,交互反複地進行將含鎢氣體供至該基板之表面的製程、及將含氫氣體之電漿供至該基板之表面的製程。
- 如請求項4之半導體裝置之製造方法,其中, 該含鎢氣體係WCl5 氣體、WCl6 氣體或WF6 氣體,該含氫氣體係H2 氣體或SiH4 氣體。
- 如請求項1至5中任一項之半導體裝置之製造方法,其中, 該孔形成製程包含下列製程: 於該遮罩膜上積層光阻層; 藉由使用EUV(Extreme ultraviolet lithography:超紫外線平版印刷術)光之PTD(Positive Tone Development:正型顯影),於該光阻層形成順著該第2孔之形狀的開口; 藉由將形成有該開口之該光阻層作為遮罩來蝕刻該遮罩膜,而於該遮罩膜形成第2孔。
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JP3642965B2 (ja) * | 1998-12-15 | 2005-04-27 | 沖電気工業株式会社 | 半導体装置の製造方法 |
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