TW202040731A - 晶片移轉機台 - Google Patents

晶片移轉機台 Download PDF

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Publication number
TW202040731A
TW202040731A TW108113905A TW108113905A TW202040731A TW 202040731 A TW202040731 A TW 202040731A TW 108113905 A TW108113905 A TW 108113905A TW 108113905 A TW108113905 A TW 108113905A TW 202040731 A TW202040731 A TW 202040731A
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TW
Taiwan
Prior art keywords
wafer
conveyor belt
module
carrier
transfer machine
Prior art date
Application number
TW108113905A
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English (en)
Other versions
TWI686895B (zh
Inventor
廖建碩
Original Assignee
台灣愛司帝科技股份有限公司
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Application filed by 台灣愛司帝科技股份有限公司 filed Critical 台灣愛司帝科技股份有限公司
Priority to TW108113905A priority Critical patent/TWI686895B/zh
Priority to CN201910408682.2A priority patent/CN111834266A/zh
Priority to US16/599,312 priority patent/US10825704B1/en
Application granted granted Critical
Publication of TWI686895B publication Critical patent/TWI686895B/zh
Publication of TW202040731A publication Critical patent/TW202040731A/zh

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    • H—ELECTRICITY
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    • B65G21/20—Means incorporated in, or attached to, framework or housings for guiding load-carriers, traction elements or loads supported on moving surfaces
    • B65G21/2027—Suction retaining means
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Abstract

本發明公開一種晶片移轉機台，其包括：一晶片承載台、一晶片輸送模組以及一晶片承載基板。晶片承載台承載多個晶片。晶片輸送模組包括至少一具有黏著表面的輸送帶。晶片承載基板承載多個晶片。其中，晶片承載台、晶片輸送模組以及晶片承載基板設置在同一生產線上，且晶片承載台與晶片承載基板都設置在至少一輸送帶的黏著表面的下方或者上方。藉此，本發明的晶片移轉機台可提升晶片移轉的效率及速度。

Description

晶片移轉機台
本發明涉及一種移轉機台，特別是涉及一種晶片移轉機台。
一般要將所製得的晶片陣列移轉到所要應用的不同尺寸的基板或面板上時，由於製程繁複，因此，造成移轉所需時間亢長的問題。
故，如何通過結構設計或流程的改良，來提升晶片移轉的效率及速度，已成為本發明所屬技術領域所欲解決的重要課題之一。
本發明所要解決的技術問題在於，針對現有技術的不足提供一種晶片移轉機台。
為了解決上述的技術問題，本發明所採用的其中一技術方案是，提供一種晶片移轉機台，其包括：一晶片承載台、一晶片輸送模組以及一晶片承載基板。晶片承載台承載多個晶片。晶片輸送模組包括至少一具有黏著表面的輸送帶。晶片承載基板承載多個晶片。其中，該晶片承載台、該晶片輸送模組以及該晶片承載基板設置在同一生產線上，且該晶片承載台與該晶片承載基板都設置在該至少一輸送帶的該黏著表面的下方或者上方。
為了解決上述的技術問題，本發明所採用的另外一技術方案是，提供一種晶片移轉機台，其包括一晶片承載台、一晶片輸送模組以及一晶片承載基板，該晶片輸送模組包括至少一具有黏著表面的輸送帶，該晶片承載台與該晶片承載基板都設置在該至少一輸送帶的該黏著表面的下方或者上方。
本發明的有益效果在於，本發明所提供的晶片移轉機台，其能通過“晶片輸送模組包括至少一具有黏著表面的輸送帶”以及“該晶片承載台、該晶片輸送模組以及該晶片承載基板設置在同一生產線上，且該晶片承載台與該晶片承載基板都設置在該至少一輸送帶的該黏著表面的下方或者上方”的技術方案，以提升晶片移轉的效率及速度。
為使能更進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本發明加以限制。
以下是通過特定的具體實施例來說明本發明所公開有關“晶片移轉機台”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不悖離本發明的構思下進行各種修改與變更。另外，本發明的附圖僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的保護範圍。
應當可以理解的是，雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號，但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件，或者一信號與另一信號。另外，本文中所使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。
[第一實施例]
參閱圖1至圖9所示，本發明第一實施例提供一種晶片移轉機台Z，其包括：一晶片承載台1、一晶片輸送模組2以及一晶片承載基板3。
首先，配合圖1所示，晶片承載台1可設置在晶片輸送模組2的至少一個輸送帶20的下方，並對應於輸送帶20的黏著表面20A。舉例來說，晶片承載台1上可承載多個晶片C，每一個晶片C都具有至少一個焊錫C1，焊錫C1可為錫膏或其他導電性材料。進一步來說，晶片承載台1可包括一承載台調整機構10以及一用於承載晶片C的承載膜11，承載膜11設置在承載台調整機構10上。承載台調整機構10可為定位滑台（X-Y Table），但不以此為限。承載膜11可為藍色PVC膠膜（Blue Tape），但不以此為限。承載台調整機構10可以吸附或夾持方式固定承載膜11，但不以此為限；承載膜11上可承載多個晶片C，且相鄰的兩個晶片C間具有一間距D1。
接著，配合圖1所示，晶片輸送模組2包括了具有黏著表面20A的至少一個輸送帶20，輸送帶20可為透光的單面膠帶，但不以此為限。進一步來說，晶片輸送模組2還可包括至少兩個滾輪21，輸送帶20的一端可連接於其中一滾輪21，輸送帶20的另一端可連接於另一滾輪21。因此，在輸送、捲收輸送帶20的過程中，輸送帶20可由其中一滾輪21輸送到另一滾輪21，且為單向輸送，但不以此為限。
接下來，配合圖1所示，晶片承載基板3可用於承載多個晶片C，且晶片承載基板3可設置在晶片輸送模組2的輸送帶20的下方，並對應於輸送帶20的黏著表面20A。進一步來說，晶片承載基板3可包括一承載基板調整機構30以及一用於承載晶片C的電路基板31，電路基板31設置在承載基板調整機構30上。承載基板調整機構30可為定位滑台（X-Y Table），但不以此為限。
據此，配合圖1所示，晶片承載台1、晶片輸送模組2以及晶片承載基板3可設置在同一生產線上，且晶片承載台1與晶片承載基板3都設置在至少一個輸送帶20的黏著表面20A的下方。因此，通過輸送帶20的設置，可將晶片承載台1上的晶片C運送至晶片承載基板3。
更進一步地，配合圖1至圖3所示，本發明所提供的晶片移轉機台Z還可進一步包括：一頂針模組4，其設置在晶片承載台1的下方，設置在晶片承載台1上的至少一個晶片C通過頂針模組4的向上頂抵而轉移黏附在至少一個輸送帶20的黏著表面20A上。舉例來說，頂針模組4可設置在晶片承載台1的承載膜11下方；其中，頂針模組4的材質可為金屬或塑膠的頂針，且頂針模組4用於頂抵晶片C的部位可呈尖角或鈍角，但不以此為限。因此，配合圖2所示，可利用頂針模組4穿過承載膜11，而將與頂針模組4相對應的晶片C頂抵到接觸輸送帶20的黏著表面20A，使得晶片C脫離承載膜11而被貼附在黏著表面20A上。其中，在頂針模組4頂抵晶片C時，晶片C可以是在其底面（設有焊錫C1的一面）完全脫離承載膜11後，晶片C的頂面才瞬間被貼附在黏著表面20A上；或者，晶片C也可以是在底面部分脫離承載膜11時，晶片C的頂面黏著於表面20A上後再完全脫離承載膜11。然而，本發明不以上述所舉的例子為限。
此外，配合圖1至圖3所示，透過頂針模組4重複上述方式，可將承載膜11上其餘的該些晶片C依序脫離承載膜11而被貼附在黏著表面20A上。進一步來說，晶片移轉機台Z還可通過控制頂針模組4相對於承載膜11進行水平偏移，或者承載台調整機構10帶動承載膜11而相對於頂針模組4進行水平偏移，以使頂針模組4依序或隨機頂抵承載膜11上的晶片C，而將晶片C貼附在黏著表面20A上。然而，本發明不以上述所舉的例子為限。
更進一步地，配合圖3至圖6所示，本發明所提供的晶片移轉機台Z還可進一步包括：一推動模組5，其設置在至少一個輸送帶20的上方，黏附在黏著表面20A上的至少一個晶片C通過推動模組5的向下頂抵而轉移設置在晶片承載基板3上。舉例來說，配合圖3至圖6所示，推動模組5可設置在輸送帶20的上方，且面對於非黏著表面20B；其中，推動模組5可為金屬或塑膠的材質的柱狀物，但不以此為限。因此，在晶片C通過輸送帶20的黏著表面20A而被運送到電路基板31上方時，通過推動模組5朝下頂抵輸送帶20與貼附在黏著表面20A上的晶片C，使得被頂抵的晶片C轉移設置在晶片承載基板3的電路基板31上。此外，透過推動模組5重複上述方式，可將輸送帶20上其餘的該些晶片C依序脫離黏著表面20A而被轉移設置在電路基板31上。然而，本發明不以上述所舉的例子為限。
最後，將設置有晶片C的電路基板31進行加熱程序，以使晶片C通過焊錫C1而固接且電性連接於電路基板31。然而，本發明不以上述所舉的例子為限。
更進一步地，配合圖6與圖7所示，本發明所提供的晶片移轉機台Z還可進一步包括：一雷射產生模組6以及一真空吸附模組7，雷射產生模組6與真空吸附模組7都設置在至少一個輸送帶20的上方，雷射產生模組6所產生的雷射光束L穿過至少一個輸送帶20，以投射在設置於至少一個晶片C上的焊錫C1，真空吸附模組7吸附至少一個輸送帶20的非黏著表面20B，以調整至少一個輸送帶20的平整度。舉例來說，配合圖6與圖7所示，本發明的晶片移轉機台Z還可在輸送帶20的上方設置一雷射產生模組6以及一真空吸附模組7。因此，在晶片C被轉移設置在電路基板31上之後，可通過雷射產生模組6朝晶片C投射雷射光束L，且雷射光束L穿過輸送帶20而投射在設置於晶片C上的焊錫C1，使焊錫C1受熱而可固接且電性連接於電路基板31。另外，通過真空吸附模組7吸附輸送帶20的非黏著表面20B，可維持輸送帶20的平整度，而呈一水平狀態，以避免在推動模組5朝下頂抵輸送帶20與晶片C的同時，影響輸送帶20的平整度，而導致晶片C不易貼附在黏著表面20A，或衍生其他製程上的問題。
此外，配合圖6至圖8所示，雷射產生模組6還可配合推動模組5一併動作。進一步來說，雷射產生模組6與推動模組5可為同一軸向設置，或者雷射產生模組6的雷射光束L投射路徑能對應於推動模組5的頂抵面。因此，在推動模組5頂抵晶片C且使晶片C被轉移設置在電路基板31的同時或者之後，可通過雷射產生模組6朝晶片C投射雷射光束L，使得晶片C可通過焊錫C1而固接且電性連接於電路基板31。
更進一步地，配合圖1與圖6所示，本發明所提供的晶片移轉機台Z還可通過控制推動模組5相對於電路基板31進行水平偏移，或者承載基板調整機構30帶動電路基板31而相對於推動模組5進行水平偏移，以使該些晶片C被轉移設置在電路基板31後，相鄰的兩個晶片C之間的間距D2可大於或小於間距D1，但不以此為限，也可以是間距D2等於間距D1。並且，通過上述的方式，也可對具有損壞的晶片C的電路基板31進行修補。舉例來說，配合圖1至圖9所示，將具有損壞的晶片C的電路基板31放置在承載基板調整機構30後，通過上述方式，可通過推動模組5將輸送帶20上的晶片C轉移設置在電路基板31上的修補位置P，而達到晶片修補的功效。然而，本發明不以上述所舉的例子為限。
更進一步地，配合圖1至圖9所示，本發明還可提供一種晶片移轉機台Z，其包括一晶片承載台1、一晶片輸送模組2以及一晶片承載基板3，晶片輸送模組2包括至少一個具有黏著表面20A的輸送帶20，晶片承載台1與晶片承載基板3都設置在至少一個輸送帶20的黏著表面20A的下方或者上方。
然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
[第二實施例]
參閱圖10及圖11所示，並請一併配合圖1至圖9，本發明第二實施例所提供的一種晶片移轉機台Z，與第一實施例的晶片移轉機台Z相似，因此，相似的作動方式不再贅述。進一步來說，根據圖10、圖11與圖5、圖7比較所示，本發明第二實施例與第一實施的差異在於，晶片承載台1與晶片承載基板3都設置在至少一個輸送帶20的黏著表面20A的上方，且面對於黏著表面20A。因此，通過輸送帶20的運送，可將晶片承載台1上的晶片C運送至晶片承載基板3。
進一步地，配合圖10所示，本發明第二實施例所提供的晶片移轉機台Z還可進一步包括：一頂針模組4，其設置在晶片承載台1的上方，設置在晶片承載台1上的至少一個晶片C通過頂針模組4的向下頂抵而轉移黏附在至少一個輸送帶20的黏著表面20A上。舉例來說，配合圖10所示，頂針模組4可設置在晶片承載台1的承載膜11上方。因此，可利用頂針模組4朝下穿過承載膜11，而將與頂針模組4相對應的晶片C頂抵到接觸輸送帶20的黏著表面20A，使得晶片C脫離承載膜11而被貼附在黏著表面20A上。然而，本發明不以上述所舉的例子為限。此外，透過頂針模組4重複上述方式，可將承載膜11上其餘的該些晶片C依序脫離承載膜11而被貼附在黏著表面20A上，而其具體實施方式請參照第一實施例，在此不再贅述。
更進一步地，配合圖10所示，本發明第二實施例所提供的晶片移轉機台Z還進一步包括：一推動模組5，其設置在至少一個輸送帶20的下方，黏附在黏著表面20A上的至少一個晶片C通過推動模組5的向上頂抵而轉移設置在晶片承載基板3上。舉例來說，配合圖10所示，推動模組5可設置在輸送帶20的下方，且面對於非黏著表面20B。因此，在晶片C通過輸送帶20的黏著表面20A而被運送到電路基板31下方時，通過推動模組5朝上頂抵輸送帶20與貼附在黏著表面20A上的晶片C，使得被頂抵的晶片C轉移設置在晶片承載基板3的電路基板31上。此外，透過推動模組5重複上述方式，可將輸送帶20上其餘的該些晶片C依序脫離黏著表面20A而被轉移設置在電路基板31上。
最後，將設置有晶片C的電路基板31進行加熱程序，以使晶片C通過焊錫C1而固接且電性連接於電路基板31。然而，本發明不以上述所舉的例子為限。
更進一步地，配合圖11所示，本發明第二實施例所提供的晶片移轉機台Z還可進一步包括：一雷射產生模組6以及一真空吸附模組7，雷射產生模組6與真空吸附模組7都設置在至少一個輸送帶20的下方，雷射產生模組6所產生的雷射光束L穿過至少一個輸送帶20，以投射在設置於至少一個晶片C上的焊錫C1，真空吸附模組7吸附至少一個輸送帶20的非黏著表面20B，以調整至少一個輸送帶20的平整度。舉例來說，配合圖11所示，本發明的晶片移轉機台Z還可在輸送帶20的下方設置雷射產生模組6以及真空吸附模組7。因此，在晶片C被轉移設置在電路基板31上之後，可通過雷射產生模組6朝晶片C投射雷射光束L，且雷射光束L穿過輸送帶20而投射在設置於晶片C上的焊錫C1，使焊錫C1受熱而可固接且電性連接於電路基板31。另外，通過真空吸附模組7吸附輸送帶20的非黏著表面20B，可維持輸送帶20的平整度，而呈一水平狀態，以避免在推動模組5朝上頂抵輸送帶20與晶片C的同時，影響輸送帶20的平整度，而導致晶片C不易貼附在黏著表面20A，或衍生其他製程上的問題。
此外，配合圖8與圖10所示，雷射產生模組6還可配合推動模組5一併動作。因此，在推動模組5頂抵晶片C且使晶片C被轉移設置在電路基板31的同時或者之後，可通過雷射產生模組6朝晶片C投射雷射光束L，使得晶片C可通過焊錫C1而固接且電性連接於電路基板31，而其具體實施方式請參照第一實施例，在此不再贅述。
然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
[實施例的有益效果]
本發明的有益效果在於，本發明所提供的晶片移轉機台Z，其能通過“晶片輸送模組2包括具有黏著表面20A的至少一個輸送帶20”以及“晶片承載台1、晶片輸送模組2以及晶片承載基板3設置在同一生產線上，且晶片承載台1與晶片承載基板3都設置在至少一個輸送帶20的黏著表面20A的下方或者上方”的技術方案，以提升晶片C移轉的效率及速度。
更進一步來說，本發明所提供的晶片移轉機台Z通過上述的技術方案，不僅可提升晶片C移轉的效率及速度，也可調整電路基板31上晶片C的間距D2，進而可客製化電路基板31。並且，本發明的晶片移轉機台Z還可通過上述的技術方案，對具有損壞的晶片C的電路基板31進行修補，將新的晶片C固接於修補位置P。
以上所公開的內容僅為本發明的優選可行實施例，並非因此侷限本發明的申請專利範圍，所以凡是運用本發明說明書及圖式內容所做的等效技術變化，均包含於本發明的申請專利範圍內。
Z:晶片移轉機台 1:晶片承載台 10:載台調整機構 11:承載膜 2:晶片輸送模組 20:輸送帶 20A:黏著表面 20B:非黏著表面 21:滾輪 3:晶片承載基板 30:承載基板調整機構 31:電路基板 4:頂針模組 5:推動模組 6:雷射產生模組 L:雷射光束 7:真空吸附模組 C:晶片 C1:焊錫 D1、D2:間距 P:修補位置
圖1為本發明第一實施例的晶片移轉機台的第一種結構示意圖。
圖2為本發明第一實施例的晶片移轉機台的頂針模組的作動示意圖。
圖3為本發明第一實施例的晶片移轉機台將晶片輸送至晶片承載基板的狀態示意圖。
圖4為本發明第一實施例的晶片移轉機台的推動模組的作動示意圖。
圖5為本發明第一實施例的晶片移轉機台進行晶片移轉過程的第一狀態示意圖。
圖6為本發明第一實施例的晶片移轉機台進行晶片移轉過程的第二狀態示意圖；其中，圖6與圖5為同一晶片移轉製程。
圖7為本發明第一實施例的晶片移轉機台的第二種結構示意圖。
圖8為本發明第一實施例的晶片移轉機台的推動模組與雷射產生模組的作動示意圖。
圖9為本發明第一實施例的晶片移轉機台的電路基板的俯視示意圖。
圖10為本發明第二實施例的晶片移轉機台的第一種結構示意圖。
圖11為本發明第二實施例的晶片移轉機台的第二種結構示意圖。
Z:晶片移轉機台
1:晶片承載台
10:載台調整機構
11:承載膜
2:晶片輸送模組
20:輸送帶
20A:黏著表面
21:滾輪
3:晶片承載基板
30:承載基板調整機構
31:電路基板
C:晶片
C1:焊錫
D1:間距

Claims (10)

  1. 一種晶片移轉機台，其包括： 一晶片承載台，其承載多個晶片； 一晶片輸送模組，其包括至少一具有黏著表面的輸送帶；以及 一晶片承載基板，其承載多個晶片； 其中，該晶片承載台、該晶片輸送模組以及該晶片承載基板設置在同一生產線上，且該晶片承載台與該晶片承載基板都設置在該至少一輸送帶的該黏著表面的下方或者上方。
  2. 如申請專利範圍第1項所述的晶片移轉機台，還進一步包括：一頂針模組，其設置在該晶片承載台的下方，設置在該晶片承載台上的至少一該晶片通過該頂針模組的向上頂抵而轉移黏附在該至少一輸送帶的該黏著表面上。
  3. 如申請專利範圍第2項所述的晶片移轉機台，還進一步包括：一推動模組，其設置在該至少一輸送帶的上方，黏附在該黏著表面上的至少一該晶片通過該推動模組的向下頂抵而轉移設置在該晶片承載基板上。
  4. 如申請專利範圍第1項所述的晶片移轉機台，還進一步包括：一頂針模組，其設置在該晶片承載台的上方，設置在該晶片承載台上的至少一該晶片通過該頂針模組的向下頂抵而轉移黏附在該至少一輸送帶的該黏著表面上。
  5. 如申請專利範圍第4項所述的晶片移轉機台，還進一步包括：一推動模組，其設置在該至少一輸送帶的下方，黏附在該黏著表面上的至少一該晶片通過該推動模組的向上頂抵而轉移設置在該晶片承載基板上。
  6. 如申請專利範圍第1項所述的晶片移轉機台，還進一步包括：一雷射產生模組以及一真空吸附模組，該雷射產生模組與該真空吸附模組都設置在該至少一輸送帶的上方，該雷射產生模組所產生的雷射光束穿過該至少一輸送帶，以投射在設置於至少一該晶片上的焊錫，該真空吸附模組吸附該至少一輸送帶的非黏著表面，以調整該至少一輸送帶的平整度。
  7. 如申請專利範圍第1項所述的晶片移轉機台，還進一步包括：一雷射產生模組以及一真空吸附模組，該雷射產生模組與該真空吸附模組都設置在該至少一輸送帶的下方，該雷射產生模組所產生的雷射光束穿過該至少一輸送帶，以投射在設置於至少一該晶片上的焊錫，該真空吸附模組吸附該至少一輸送帶的非黏著表面，以調整該至少一輸送帶的平整度。
  8. 如申請專利範圍第1項所述的晶片移轉機台，其中，該晶片輸送模組包括至少兩個滾輪，該至少一輸送帶由其中一該滾輪輸送到另一該滾輪，該至少一輸送帶為一透光的單面膠帶。
  9. 如申請專利範圍第1項所述的晶片移轉機台，其中，該晶片承載台包括一承載台調整機構以及一用於承載該晶片的承載膜，該承載膜設置在該承載台調整機構上；其中，該晶片承載基板包括一承載基板調整機構以及一用於承載該晶片的電路基板，該電路基板設置在該承載基板調整機構上。
  10. 一種晶片移轉機台，其包括一晶片承載台、一晶片輸送模組以及一晶片承載基板，該晶片輸送模組包括至少一具有黏著表面的輸送帶，該晶片承載台與該晶片承載基板都設置在該至少一輸送帶的該黏著表面的下方或者上方。
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