CN111834266A - 芯片转移机台 - Google Patents

芯片转移机台 Download PDF

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Publication number
CN111834266A
CN111834266A CN201910408682.2A CN201910408682A CN111834266A CN 111834266 A CN111834266 A CN 111834266A CN 201910408682 A CN201910408682 A CN 201910408682A CN 111834266 A CN111834266 A CN 111834266A
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China
Prior art keywords
chip
module
transfer machine
conveying belt
substrate
Prior art date
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Withdrawn
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CN201910408682.2A
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English (en)
Inventor
廖建硕
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Asti Global Inc Taiwan
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Asti Global Inc Taiwan
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Publication of CN111834266A publication Critical patent/CN111834266A/zh
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Abstract

本发明公开一种芯片转移机台，包括：芯片承载台、芯片输送模块以及芯片承载基板。芯片承载台承载多个芯片。芯片输送模块包括至少一个具有粘着表面的输送带。芯片承载基板承载多个芯片。芯片承载台、芯片输送模块以及芯片承载基板设置在同一个生产线上，且芯片承载台与芯片承载基板都设置在至少一个输送带的粘着表面的下方或者上方。因此，本发明的芯片转移机台可提升芯片转移的效率及速度。

Description

芯片转移机台
技术领域
本发明涉及一种转移机台，特别是涉及一种芯片转移机台。
背景技术
一般要将所制得的芯片阵列转移到所要应用的不同尺寸的基板或面板上时，由于程序复杂，因此，造成转移所需时间较长的问题。
因此，如何通过结构设计或流程的改良，来提升芯片转移的效率及速度，已成为本发明所属技术领域所欲解决的重要课题之一。
发明内容
本发明所要解决的技术问题在于，针对现有技术的不足提供一种芯片转移机台。
为了解决上述的技术问题，本发明所采用的其中一技术方案是，提供一种芯片转移机台，包括：芯片承载台、芯片输送模块以及芯片承载基板。芯片承载台承载多个芯片。芯片输送模块包括至少一个具有粘着表面的输送带。芯片承载基板承载多个芯片。其中，所述芯片承载台、所述芯片输送模块以及所述芯片承载基板设置在同一个生产线上，且所述芯片承载台与所述芯片承载基板都设置在至少一个所述输送带的所述粘着表面的下方或者上方。
为了解决上述的技术问题，本发明所采用的另外一技术方案是，提供一种芯片转移机台，包括芯片承载台、芯片输送模块以及芯片承载基板，所述芯片输送模块包括至少一个具有粘着表面的输送带，所述芯片承载台与所述芯片承载基板都设置在至少一个所述输送带的所述粘着表面的下方或者上方。
本发明的有益效果在于，本发明所提供的芯片转移机台，能通过“芯片输送模块包括至少一个具有粘着表面的输送带”以及“所述芯片承载台、所述芯片输送模块以及所述芯片承载基板设置在同一个生产线上，且所述芯片承载台与所述芯片承载基板都设置在至少一个所述输送带的所述粘着表面的下方或者上方”的技术方案，以提升芯片转移的效率及速度。
为使能更进一步了解本发明的特征及技术内容，请参阅以下有关本发明的详细说明与附图，然而所提供的附图仅用于提供参考与说明，并非用来对本发明加以限制。
附图说明
图1为本发明第一实施例的芯片转移机台的第一种结构示意图。
图2为本发明第一实施例的芯片转移机台的顶针模块的动作示意图。
图3为本发明第一实施例的芯片转移机台将芯片输送至芯片承载基板的状态示意图。
图4为本发明第一实施例的芯片转移机台的推动模块的动作示意图。
图5为本发明第一实施例的芯片转移机台进行芯片转移过程的第一状态示意图。
图6为本发明第一实施例的芯片转移机台进行芯片转移过程的第二状态示意图；其中，图6与图5为同一芯片转移程序。
图7为本发明第一实施例的芯片转移机台的第二种结构示意图。
图8为本发明第一实施例的芯片转移机台的推动模块与激光产生模块的动作示意图。
图9为本发明第一实施例的芯片转移机台的电路基板的俯视示意图。
图10为本发明第二实施例的芯片转移机台的第一种结构示意图。
图11为本发明第二实施例的芯片转移机台的第二种结构示意图。
具体实施方式
以下是通过特定的具体实施例来说明本发明所公开有关“芯片转移机台”的实施方式，本领域技术人员可由本说明书所公开的内容了解本发明的优点与效果。本发明可通过其他不同的具体实施例加以施行或应用，本说明书中的各项细节也可基于不同观点与应用，在不脱离本发明的构思下进行各种修改与变更。另外，本发明的附图仅为简单示意说明，并非依实际尺寸的描绘，事先声明。以下的实施方式将进一步详细说明本发明的相关技术内容，但所公开的内容并非用以限制本发明的保护范围。
应当可以理解的是，虽然本文中可能会使用到“第一”、“第二”、“第三”等术语来描述各种元件，但这些元件不应受这些术语的限制。这些术语主要是用以区分一元件与另一元件。另外，本文中所使用的术语“或”，应视实际情况可能包括相关联的列出项目中的任一个或者多个的组合。
[第一实施例]
参阅图1至图9所示，本发明第一实施例提供一种芯片转移机台Z，包括：芯片承载台1、芯片输送模块2以及芯片承载基板3。
首先，配合图1所示，芯片承载台1可设置在芯片输送模块2的至少一个输送带20的下方，并对应于输送带20的粘着表面20A。举例来说，芯片承载台1上可承载多个芯片C，每一个芯片C都具有至少一个焊锡C1，焊锡C1可为锡膏或其他导电性材料。进一步来说，芯片承载台1可包括承载台调整机构10以及用于承载芯片C的承载膜11，承载膜11设置在承载台调整机构10上。承载台调整机构10可为定位滑台(X-Y Table)，但不以此为限。承载膜11可为蓝色PVC胶膜(Blue Tape)，但不以此为限。承载台调整机构10可以吸附或夹持方式固定承载膜11，但不以此为限；承载膜11上可承载多个芯片C，且相邻的两个芯片C间具有一间距D1。
接着，配合图1所示，芯片输送模块2包括了具有粘着表面20A的至少一个输送带20，输送带20可为透光的单面胶带，但不以此为限。进一步来说，芯片输送模块2还可包括至少两个滚轮21，输送带20的一端可连接于其中一个滚轮21，输送带20的另一端可连接于另一个滚轮21。因此，在输送、卷收输送带20的过程中，输送带20可由其中一个滚轮21输送到另一个滚轮21，且为单向输送，但不以此为限。
接下来，配合图1所示，芯片承载基板3可用于承载多个芯片C，且芯片承载基板3可设置在芯片输送模块2的输送带20的下方，并对应于输送带20的粘着表面20A。进一步来说，芯片承载基板3可包括承载基板调整机构30以及用于承载芯片C的电路基板31，电路基板31设置在承载基板调整机构30上。承载基板调整机构30可为定位滑台(X-Y Table)，但不以此为限。
由此，配合图1所示，芯片承载台1、芯片输送模块2以及芯片承载基板3可设置在同一个生产线上，且芯片承载台1与芯片承载基板3都设置在至少一个输送带20的粘着表面20A的下方。因此，通过输送带20的设置，可将芯片承载台1上的芯片C运送至芯片承载基板3。
更进一步地，配合图1至图3所示，本发明所提供的芯片转移机台Z还可进一步包括：顶针模块4，顶针模块4设置在芯片承载台1的下方，设置在芯片承载台1上的至少一个芯片C通过顶针模块4的向上顶抵而转移粘附在至少一个输送带20的粘着表面20A上。举例来说，顶针模块4可设置在芯片承载台1的承载膜11下方；其中，顶针模块4的材质可为金属或塑胶的顶针，且顶针模块4用于顶抵芯片C的部位可呈尖角或钝角，但不以此为限。因此，配合图2所示，可利用顶针模块4穿过承载膜11，而将与顶针模块4相对应的芯片C顶抵到接触输送带20的粘着表面20A，使得芯片C脱离承载膜11而被贴附在粘着表面20A上。其中，在顶针模块4顶抵芯片C时，芯片C可以是在其底面(设有焊锡C1的一面)完全脱离承载膜11后，芯片C的顶面才瞬间被贴附在粘着表面20A上；或者，芯片C也可以是在底面部分脱离承载膜11时，芯片C的顶面粘着于表面20A上后再完全脱离承载膜11。然而，本发明不以上述所举的例子为限。
此外，配合图1至图3所示，通过顶针模块4重复上述方式，可将承载膜11上其余的多个芯片C依序脱离承载膜11而被贴附在粘着表面20A上。进一步来说，芯片转移机台Z还可通过控制顶针模块4相对于承载膜11进行水平偏移，或者承载台调整机构10带动承载膜11而相对于顶针模块4进行水平偏移，以使顶针模块4依序或随机顶抵承载膜11上的芯片C，而将芯片C贴附在粘着表面20A上。然而，本发明不以上述所举的例子为限。
更进一步地，配合图3至图7所示，本发明所提供的芯片转移机台Z还可进一步包括：推动模块5，推动模块5设置在至少一个输送带20的上方，粘附在粘着表面20A上的至少一个芯片C通过推动模块5的向下顶抵而转移设置在芯片承载基板3上。举例来说，配合图3至图6所示，推动模块5可设置在输送带20的上方，且面对于非粘着表面20B；其中，推动模块5可为金属或塑胶的材质的柱状物，但不以此为限。因此，在芯片C通过输送带20的粘着表面20A而被运送到电路基板31上方时，通过推动模块5朝下顶抵输送带20与贴附在粘着表面20A上的芯片C，使得被顶抵的芯片C转移设置在芯片承载基板3的电路基板31上。此外，通过推动模块5重复上述方式，可将输送带20上其余的多个芯片C依序脱离粘着表面20A而被转移设置在电路基板31上。然而，本发明不以上述所举的例子为限。
最后，将设置有芯片C的电路基板31进行加热程序，以使芯片C通过焊锡C1而固接且电连接于电路基板31。然而，本发明不以上述所举的例子为限。
更进一步地，配合图6与图7所示，本发明所提供的芯片转移机台Z还可进一步包括：激光产生模块6以及真空吸附模块7，激光产生模块6与真空吸附模块7都设置在至少一个输送带20的上方，激光产生模块6所产生的激光光束L穿过至少一个输送带20，以投射在设置于至少一个芯片C上的焊锡C1，真空吸附模块7吸附至少一个输送带20的非粘着表面20B，以调整至少一个输送带20的平整度。举例来说，配合图6与图7所示，本发明的芯片转移机台Z还可在输送带20的上方设置激光产生模块6以及真空吸附模块7。因此，在芯片C被转移设置在电路基板31上之后，可通过激光产生模块6朝芯片C投射激光光束L，且激光光束L穿过输送带20而投射在设置于芯片C上的焊锡C1，使焊锡C1受热而可固接且电连接于电路基板31。另外，通过真空吸附模块7吸附输送带20的非粘着表面20B，可维持输送带20的平整度，而呈水平状态，以避免在推动模块5朝下顶抵输送带20与芯片C的同时，影响输送带20的平整度，而导致芯片C不易贴附在粘着表面20A，或衍生其他程序上的问题。
此外，配合图6至图8所示，激光产生模块6还可配合推动模块5一并动作。进一步来说，激光产生模块6与推动模块5可为同一轴向设置，或者激光产生模块6的激光光束L投射路径能对应于推动模块5的顶抵面。因此，在推动模块5顶抵芯片C且使芯片C被转移设置在电路基板31的同时或者之后，可通过激光产生模块6朝芯片C投射激光光束L，使得芯片C可通过焊锡C1而固接且电连接于电路基板31。
更进一步地，配合图1与图6所示，本发明所提供的芯片转移机台Z还可通过控制推动模块5相对于电路基板31进行水平偏移，或者承载基板调整机构30带动电路基板31而相对于推动模块5进行水平偏移，以使多个芯片C被转移设置在电路基板31后，相邻的两个芯片C之间的间距D2可大于或小于间距D1，但不以此为限，也可以是间距D2等于间距D1。并且，通过上述的方式，也可对具有损坏的芯片C的电路基板31进行修补。举例来说，配合图1至图9所示，将具有损坏的芯片C的电路基板31放置在承载基板调整机构30后，通过上述方式，可通过推动模块5将输送带20上的芯片C转移设置在电路基板31上的修补位置P，而达到芯片修补的效果。然而，本发明不以上述所举的例子为限。
更进一步地，配合图1至图9所示，本发明还可提供一种芯片转移机台Z，包括芯片承载台1、芯片输送模块2以及芯片承载基板3，芯片输送模块2包括至少一个具有粘着表面20A的输送带20，芯片承载台1与芯片承载基板3都设置在至少一个输送带20的粘着表面20A的下方或者上方。
然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
[第二实施例]
参阅图10及图11所示，并请一并配合图1至图9，本发明第二实施例所提供的一种芯片转移机台Z，与第一实施例的芯片转移机台Z相似，因此，相似的动作方式不再赘述。进一步来说，根据图10、图11与图5、图7比较所示，本发明第二实施例与第一实施的差异在于，芯片承载台1与芯片承载基板3都设置在至少一个输送带20的粘着表面20A的上方，且面对于粘着表面20A。因此，通过输送带20的运送，可将芯片承载台1上的芯片C运送至芯片承载基板3。
进一步地，配合图10所示，本发明第二实施例所提供的芯片转移机台Z还可进一步包括：顶针模块4，顶针模块4设置在芯片承载台1的上方，设置在芯片承载台1上的至少一个芯片C通过顶针模块4的向下顶抵而转移粘附在至少一个输送带20的粘着表面20A上。举例来说，配合图10所示，顶针模块4可设置在芯片承载台1的承载膜11上方。因此，可利用顶针模块4朝下穿过承载膜11，而将与顶针模块4相对应的芯片C顶抵到接触输送带20的粘着表面20A，使得芯片C脱离承载膜11而被贴附在粘着表面20A上。然而，本发明不以上述所举的例子为限。此外，通过顶针模块4重复上述方式，可将承载膜11上其余的多个芯片C依序脱离承载膜11而被贴附在粘着表面20A上，而其具体实施方式请参照第一实施例，在此不再赘述。
更进一步地，配合图10所示，本发明第二实施例所提供的芯片转移机台Z还进一步包括：推动模块5，推动模块5设置在至少一个输送带20的下方，粘附在粘着表面20A上的至少一个芯片C通过推动模块5的向上顶抵而转移设置在芯片承载基板3上。举例来说，配合图10所示，推动模块5可设置在输送带20的下方，且面对于非粘着表面20B。因此，在芯片C通过输送带20的粘着表面20A而被运送到电路基板31下方时，通过推动模块5朝上顶抵输送带20与贴附在粘着表面20A上的芯片C，使得被顶抵的芯片C转移设置在芯片承载基板3的电路基板31上。此外，通过推动模块5重复上述方式，可将输送带20上其余的多个芯片C依序脱离粘着表面20A而被转移设置在电路基板31上。
最后，将设置有芯片C的电路基板31进行加热程序，以使芯片C通过焊锡C1而固接且电连接于电路基板31。然而，本发明不以上述所举的例子为限。
更进一步地，配合图11所示，本发明第二实施例所提供的芯片转移机台Z还可进一步包括：激光产生模块6以及真空吸附模块7，激光产生模块6与真空吸附模块7都设置在至少一个输送带20的下方，激光产生模块6所产生的激光光束L穿过至少一个输送带20，以投射在设置于至少一个芯片C上的焊锡C1，真空吸附模块7吸附至少一个输送带20的非粘着表面20B，以调整至少一个输送带20的平整度。举例来说，配合图11所示，本发明的芯片转移机台Z还可在输送带20的下方设置激光产生模块6以及真空吸附模块7。因此，在芯片C被转移设置在电路基板31上之后，可通过激光产生模块6朝芯片C投射激光光束L，且激光光束L穿过输送带20而投射在设置于芯片C上的焊锡C1，使焊锡C1受热而可固接且电连接于电路基板31。另外，通过真空吸附模块7吸附输送带20的非粘着表面20B，可维持输送带20的平整度，而呈水平状态，以避免在推动模块5朝上顶抵输送带20与芯片C的同时，影响输送带20的平整度，而导致芯片C不易贴附在粘着表面20A，或衍生其他程序上的问题。
此外，配合图8与图10所示，激光产生模块6还可配合推动模块5一并动作。因此，在推动模块5顶抵芯片C且使芯片C被转移设置在电路基板31的同时或者之后，可通过激光产生模块6朝芯片C投射激光光束L，使得芯片C可通过焊锡C1而固接且电连接于电路基板31，而其具体实施方式请参照第一实施例，在此不再赘述。
然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
[实施例的有益效果]
本发明的有益效果在于，本发明所提供的芯片转移机台Z，能通过“芯片输送模块2包括具有粘着表面20A的至少一个输送带20”以及“芯片承载台1、芯片输送模块2以及芯片承载基板3设置在同一生产线上，且芯片承载台1与芯片承载基板3都设置在至少一个输送带20的粘着表面20A的下方或者上方”的技术方案，以提升芯片C转移的效率及速度。
更进一步来说，本发明所提供的芯片转移机台Z通过上述的技术方案，不仅可提升芯片C转移的效率及速度，也可调整电路基板31上芯片C的间距D2，进而可定制化电路基板31。并且，本发明的芯片转移机台Z还可通过上述的技术方案，对具有损坏的芯片C的电路基板31进行修补，将新的芯片C固接于修补位置P。
以上所公开的内容仅为本发明的优选可行实施例，并非因此局限本发明的权利要求书的保护范围，所以凡是运用本发明说明书及附图内容所做的等效技术变化，均包含于本发明的权利要求书的保护范围内。

Claims (10)

1.一种芯片转移机台，其特征在于，包括：
芯片承载台，所述芯片承载台承载多个芯片；
芯片输送模块，所述芯片输送模块包括至少一个具有粘着表面的输送带；以及
芯片承载基板，所述芯片承载基板承载多个芯片；
其中，所述芯片承载台、所述芯片输送模块以及所述芯片承载基板设置在同一个生产线上，且所述芯片承载台与所述芯片承载基板都设置在至少一个所述输送带的所述粘着表面的下方或者上方。
2.根据权利要求1所述的芯片转移机台，其特征在于，所述芯片转移机台还进一步包括：顶针模块，所述顶针模块设置在所述芯片承载台的下方，设置在所述芯片承载台上的至少一个所述芯片通过所述顶针模块的向上顶抵而转移黏附在至少一个所述输送带的所述粘着表面上。
3.根据权利要求2所述的芯片转移机台，其特征在于，所述芯片转移机台还进一步包括：推动模块，所述推动模块设置在至少一个所述输送带的上方，粘附在所述粘着表面上的至少一个所述芯片通过所述推动模块的向下顶抵而转移设置在所述芯片承载基板上。
4.根据权利要求1所述的芯片转移机台，其特征在于，所述芯片转移机台还进一步包括：顶针模块，所述顶针模块设置在所述芯片承载台的上方，设置在所述芯片承载台上的至少一个所述芯片通过所述顶针模块的向下顶抵而转移粘附在至少一个所述输送带的所述粘着表面上。
5.根据权利要求4所述的芯片转移机台，其特征在于，所述芯片转移机台还进一步包括：推动模块，所述推动模块设置在至少一个所述输送带的下方，粘附在所述粘着表面上的至少一个所述芯片通过所述推动模块的向上顶抵而转移设置在所述芯片承载基板上。
6.根据权利要求1所述的芯片转移机台，其特征在于，所述芯片转移机台还进一步包括：激光产生模块以及真空吸附模块，所述激光产生模块与所述真空吸附模块都设置在至少一个所述输送带的上方，所述激光产生模块所产生的激光光束穿过至少一个所述输送带，以投射在设置于至少一个所述芯片上的焊锡，所述真空吸附模块吸附至少一个所述输送带的非粘着表面，以调整至少一个所述输送带的平整度。
7.根据权利要求1所述的芯片转移机台，其特征在于，所述芯片转移机台还进一步包括：激光产生模块以及真空吸附模块，所述激光产生模块与所述真空吸附模块都设置在至少一个所述输送带的下方，所述激光产生模块所产生的激光光束穿过至少一个所述输送带，以投射在设置于至少一个所述芯片上的焊锡，所述真空吸附模块吸附至少一个所述输送带的非粘着表面，以调整至少一所述输送带的平整度。
8.根据权利要求1所述的芯片转移机台，其特征在于，所述芯片输送模块包括至少两个滚轮，至少一个所述输送带由其中一所述滚轮输送到另一所述滚轮，至少一个所述输送带为一透光的单面胶带。
9.根据权利要求1所述的芯片转移机台，其特征在于，所述芯片承载台包括承载台调整机构以及用于承载所述芯片的承载膜，所述承载膜设置在所述承载台调整机构上；其中，所述芯片承载基板包括承载基板调整机构以及用于承载所述芯片的电路基板，所述电路基板设置在所述承载基板调整机构上。
10.一种芯片转移机台，其特征在于，包括芯片承载台、芯片输送模块以及芯片承载基板，所述芯片输送模块包括至少一个具有粘着表面的输送带，所述芯片承载台与所述芯片承载基板都设置在至少一个所述输送带的所述粘着表面的下方或者上方。
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