TW202029426A - 半導體封裝和印刷電路板 - Google Patents
半導體封裝和印刷電路板 Download PDFInfo
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- TW202029426A TW202029426A TW109101878A TW109101878A TW202029426A TW 202029426 A TW202029426 A TW 202029426A TW 109101878 A TW109101878 A TW 109101878A TW 109101878 A TW109101878 A TW 109101878A TW 202029426 A TW202029426 A TW 202029426A
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Abstract
本發明公開一種半導體封裝,包括:基底,包括上表面和與該上表面相對的下表面;射頻結構,嵌入該基底中,並靠近該基底的上表面;積體電路晶粒,以倒裝晶片的方式安裝在該基底的下表面上;導電結構,設置在該基底的下表面上並圍繞該積體電路晶粒佈置;以及金屬熱界面層,包括與該積體電路晶粒的背面直接接觸的背面金屬層,以及印刷在該背面金屬層上的焊膏。
Description
本發明涉及機械技術領域,尤其涉及一種半導體封裝和印刷電路板。
如本領域中已知的,半導體晶片封裝通常包括積體電路(integrated circuit,IC)晶粒和封裝IC晶粒的模塑料。在運行過程中,IC晶粒會產生大量熱量,這可能會損壞IC晶粒或降低IC的可靠性。例如,在混合晶片級封裝(hybrid chip scale package,混合CSP)中,一個IC晶粒(例如SoC(system on chip)晶粒)產生的熱量可能不利於鄰近的IC晶粒(例如,堆疊在SoC晶粒上的DRAM(Dynamic Random Access Memory,動態隨機存取記憶體)晶粒),從而導致晶片整體性能降低。
為了將熱量從IC晶粒消散,半導體晶片封裝經常與外部散熱結構耦合,外部散熱結構例如為附接到IC晶粒的散佈器(spreader)或散熱器(heat sink)。為了將熱量散發到周圍環境,通常透過在接觸表面上施加諸如導熱油脂或導電聚合物之類的熱界面材料(thermal interface material,TIM),將散熱結構耦合到半導體晶片封裝的接觸表面。
然而,涉及使用TIM的常規熱解決方案並不令人滿意。使用TIM的傳統設計具有諸如熱瓶頸和較差的黏附性的問題。業界期望在IC晶粒與散熱結構之間具有低的接觸阻抗(contact resistance)或低的熱傳導阻抗和和良好的熱界面,以從IC晶粒透過散熱結構有效地進行熱傳導。業界還期望提供一種在部件之間可以採用的改進的熱傳遞機構/介質,以有效地將熱量從IC晶粒傳遞出去。
有鑑於此,本發明提供一種半導體封裝和印刷電路板,以更加有效的散熱。
根據本發明的第一方面,公開一種半導體封裝,包括:
基底,包括上表面和與該上表面相對的下表面;
射頻結構,嵌入該基底中,並靠近該基底的上表面;
積體電路晶粒,以倒裝晶片的方式安裝在該基底的下表面上;
導電結構,設置在該基底的下表面上並圍繞該積體電路晶粒佈置;以及
金屬熱界面層,包括與該積體電路晶粒的背面直接接觸的背面金屬層,以及印刷在該背面金屬層上的焊膏。
根據本發明的第二方面,公開一種印刷電路板組件,包括:
印刷電路板,具有直接面對基底的下表面的上表面,其中該印刷電路板包括在該印刷電路板的上表面上的導電導熱墊的陣列,位於該印刷電路板內且位於該導電導熱墊的陣列下方的導熱通孔,安裝在該印刷電路板的下表面的散熱結構,其中該散熱結構與該導熱通孔熱接觸;以及
如上所述的半導體封裝,安裝在該導電導熱墊的陣列上。
根據本發明的第三方面,公開一種半導體封裝,包括:
基底,包括底表面和與該底表面相對的頂表面;
第一半導體晶片,安裝在該基底的頂表面上;
第二半導體晶片,透過晶粒附著膜安裝在該第一半導體晶片上;
散熱元件,透過高導熱晶粒附接膜安裝在該第一半導體晶片上或該第二半導體晶片上;以及
模塑料,封裝該第一半導體晶片,該第二半導體晶片和該散熱元件。
本發明的半導體封裝由於在積體電路晶粒的背面設置有金屬熱界面層,並且金屬熱界面層包括與該積體電路晶粒的背面直接接觸的背面金屬層,以及印刷在該背面金屬層上的焊膏。這樣可以透過積體電路晶粒的背面進行散熱,並且金屬熱界面層加快了散熱速度,提高了散熱效率。
以下描述是實施本發明的最佳構想模式。進行該描述是為了說明本發明的一般原理,而不應被認為是限制性的。本發明的範圍由所附申請專利範圍確定。
將針對特定實施例並參考某些附圖來描述本發明,但是本發明不限於此,而是僅由申請專利範圍書來限制。所描述的附圖僅是示意性的而非限制性的。在附圖中,出於說明的目的,一些元件的尺寸可能被放大並且未按比例繪製。在本發明的實踐中,尺寸和相對尺寸不對應於實際尺寸。
通常,本發明涉及一種半導體封裝,該半導體封裝包括至少一個積體電路晶片,其以例如“倒裝晶片(flip chip)”構造附接到基板。在這種倒裝晶片的配置中,凸塊形成在IC晶粒的訊號焊盤或端子上,並且IC晶粒可以倒置(“翻轉”)並透過回流凸塊附著在基板上,以便它們附著在基板表面上的相應的焊盤上。IC晶粒可以是多種類型的IC晶粒之一。例如,根據各種實施例,IC晶粒可以是射頻(radio-frequency,RF)IC晶粒、微處理(microprocessor)器晶片、專用積體電路(application-specific integrated circuit,ASIC)或記憶體晶片。
基板可以是相關領域技術人員已知的不同類型的基板之一(例如,有機或無機基板)。基板可由與介電材料結合的一個或複數個導電層製成。例如,電介質材料可以由各種物質製成,例如雙馬來醯亞胺三嗪(bismaleimide triazine,BT)。導電層可以由金屬或金屬的組合(合金)製成,例如銅和鋁,其有助於IC晶粒和焊球之間的耦合。可以透過例如蝕刻導電層在導電層中形成跡線或佈線圖案。基板可以是單層,兩層或多層基板。
示例性半導體封裝可以是具有天線陣列結構的RFIC晶片封裝,該天線陣列結構特別適合毫米波(millimeter wave,mmW)應用或雷達系統。然而,應當理解,本發明的原理不應限於任何特定的封裝類型或IC晶粒。相反,本發明的原理廣泛地涉及用於在包括積體電路封裝和傳熱裝置的印刷電路板(printed circuit board,PCB)組件的製造過程中改進熱界面材料應用的技術。
第1圖是示出根據本發明的一個實施例的示例性半導體封裝的示意性截面圖。如第1圖所示,半導體封裝1包括基底10,基底10具有嵌入在基底10的上表面10a附近的射頻(RF)結構11。在一些實施例中,基底10可以是封裝基板,矽中間體(silicon interposer)或印刷電路板(PCB)。在其他實施例中,射頻(RF)結構11包括天線陣列,例如,射頻(RF)結構11可以包括頂部天線層111和與頂部天線層間隔開的底部天線層112。例如,可以在頂部天線層111和底部天線層112之間插入至少一個介電層113。根據一個實施例,頂部天線層111和底部天線層112可以在基底10的較上層的金屬層中形成,但不限於此。基底10可以包括用於互連的金屬跡線114和通孔115。其中,RF結構11可以是形成基底10時共同形成的,例如在形成佈線(例如金屬跡線114和通孔115等)時,將底部天線層112和頂部天線層111形成,並且期間形成至少一個介電層113,因此RF結構11可以理解為包含在基底10中。
根據一個實施例,例如,半導體封裝1可以進一步包括IC晶粒20,例如安裝在基底10的下表面10b上的RFIC晶粒。IC晶粒20可以以倒裝晶片的方式安裝在下表面10b上,使得IC晶粒20的背面20b暴露並且可用於散熱。倒裝晶片型連接是一種用於將倒裝的IC晶粒20與外部電路互連的方法,其具有諸如設置在IC晶粒20的晶片焊盤上的微凸塊或銅柱凸塊之類的凸塊202。凸塊202對準並電連接設置在基底10的下表面10b上的銅焊盤116上。可選地,可以將底部填充物210施加到IC晶粒20和基底10的下表面10b之間的間隙中。
例如,根據一個實施例,半導體封裝1可以進一步包括複數個導電焊盤118,佈置在基底10的下表面10b上並且圍繞IC晶粒20佈置。導電焊盤118可以電連接至電路,包括透過金屬跡線114和通孔115(電連接到)的基底10的RF結構11。複數個導電結構120,例如球柵陣列(ball grid array,BGA)球(或焊球)可以分別設置在導電焊盤118上,用於電連接包括基底10的RF結構11至具有外部電路裝置,例如印刷電路板(PCB)。
根據一個實施例,例如,半導體封裝1可以進一步包括金屬熱界面層30。金屬熱界面層30可以是金屬雙層結構,其包括與IC晶粒20的背面20b直接接觸的背面金屬層310,和共形地印刷在背面金屬層310上的焊膏(或預焊劑)320。其中共形地可以是說背面金屬層310與焊膏320的形狀相同,製作方式相同。根據一個實施例,優選地,背面金屬層310可以包括Au(金),但不限於此。例如,背面金屬層310可以是濺射到IC晶粒20的背面20b上的Au層。採用這種方式可以利用IC晶粒20的背面進行散熱,並且背面金屬層310和焊膏320的設置和組合可以提高散熱效率,此外這種將背面金屬層310和焊膏320的組合形成在IC晶粒20的背面方式易於製造,有利於製程設計。
例如,焊膏(或預焊劑)320可以透過模版印刷(stencil printing)方法形成,但不限於此。例如,焊膏320可包括商業用途的任何無鉛(lead-free)焊料,其可包含錫、銅、銀、鉍、銦、鋅、銻和其他微量的金屬。例如,根據一個實施例,焊膏320可以比背面金屬層310更厚,以便於後續安裝。值得注意的是,金屬熱界面層30不包括常規的熱界面材料(TIM),例如導熱油脂或導電聚合物。相比先前的TIM,本實施例中的焊膏320和背面金屬層310導熱性能更好,並且還可以方便後續的安裝。
根據一個實施例,底部填充物210,IC晶粒20和金屬熱界面層30的組合厚度基本上等於從基底10的下表面10b測量的導電結構120的球高h。需要說明的是,在一些實施例中,導電焊盤118可以位於基底10的下表面10b之內,也即導電焊盤118嵌入在基底10內部,此時導電結構120的高度即為從基底10的下表面10b開始測量直到導電結構120的另一側的高度。如果如第1圖和第2圖所示,導電焊盤118位於基底10的下表面10b的表面上時,在安裝(將第1圖所示的半導體封裝1安裝到第2圖中的PCB 4)時,導電結構120會被壓縮,因此導電結構120會包裹到導電焊盤118的外側壁(例如繼而接觸到基底10的下表面10b),這樣導電結構120的高度也為從基底10的下表面10b開始測量直到導電結構120的另一側的高度。實際上,在安裝後,導電結構120的下表面與金屬熱界面層30的下表面是齊平的。
請參考第2圖,第2圖為根據本發明一實施例的包括第1圖中的半導體封裝的示例性PCB組件的示意性截面圖。如第2圖所示,示例性PCB組件2包括PCB 4,該PCB 4具有直接面對基底10的下表面10b的上表面4a。根據一個實施例,可以在PCB 4的上表面4a上的阻焊劑層402中的阻焊劑開口402a內佈置銅的導電導熱墊(conductive thermal pad)410的陣列。
根據一個實施例,導電導熱墊410的陣列的跨度(span)可以與IC晶粒20的背面20b的面積相對應。根據一個實施例,導電導熱墊410的陣列的跨度可以是略微的大於IC晶粒20的背面20b的面積。例如,從IC晶粒20的邊緣到導電導熱墊410的陣列的邊緣的距離可以是大約150微米,但不限於此。
根據一個實施例,可以在相鄰的導電導熱墊410之間形成狹縫或間隙411。根據一個實施例,在導電導熱墊410的陣列下方的PCB 4內形成複數個導熱通孔420。在一個實施例中,導熱通孔420分別與導電導熱墊410熱接觸,例如每個導熱通孔420分別與每個導電導熱墊410熱接觸。根據一個實施例,導熱通孔420是電鍍的穿孔(電鍍通孔),即在通孔中電鍍有金屬,以導電及散熱。根據一個實施例,諸如散熱器之類的散熱結構5可以安裝在PCB 4的下表面4b上。散熱結構5與導熱通孔420熱接觸,因此熱量可以透過導熱通孔420傳導到散熱結構5,進而散發出去。
根據一個實施例,如第1圖所示的半導體封裝1安裝到PCB 4的上表面4a上,使得焊膏320層壓到導電導熱墊410的陣列上。在適當的壓力下,焊膏320可以被強壓(或擠壓)到狹縫或間隙411中。透過提供這種構造,可以產生更多的散熱表面積。導電結構120與PCB 4的上表面4a上的匹配焊盤412對準。可以對焊膏320和導電結構120進行回流製程以形成永久性接合。金屬熱界面層30用作高效熱傳遞介質,以允許熱能從IC晶粒20快速移動到導電熱焊盤410以及PCB 40的導熱通孔420,接著到散熱結構5。本實施例中,為避免過高的溫度對RF結構和IC晶粒20等的不利影響,在IC晶粒20的背面設置散熱路徑,這樣可以使熱量透過背面的散熱路徑散出,而減小對RF結構的影響。此外,使用本發明是有利的,因為對焊膏320和導電結構120進行回流製程可以顯著改善半導體封裝1和PCB 4之間的黏附性。
請參考第3圖至第6圖。第3圖至第6圖是示出根據本發明的各個實施例的半導體封裝的示意性截面圖。例如,說明性半導體封裝可以是具有倒裝晶片晶粒和堆疊在倒裝晶片晶粒上的引線接合晶粒的混合CSP。
如第3圖所示,半導體封裝3a包括具有頂表面100a和底表面100b的基底100。諸如焊球的複數個連接元件1002可以設置在底表面100b上用於進一步的連接。半導體晶片101安裝在基底100的頂表面100a上。在非限制性示例中,半導體晶片101可以是系統單晶片(system-on-a-chip,SoC),並且可以在運行期間產生熱量。
根據一個實施例,透過將在半導體晶片101的有源表面上的凸塊(微凸塊或銅柱凸塊)1011與在基底100的頂表面100a上的匹配焊盤1001對準和連接,半導體晶片101可以以倒裝晶片的方式安裝到頂表面100a上。可以應用可選的底部填充物110以填充半導體晶片101和基底100的頂表面100a之間的間隙。
根據一個實施例,半導體晶片(或半導體封裝)103可以直接堆疊在半導體晶片101上,並且可以透過使用引線接合WB電耦合到基底10。在非限制性示例中,半導體晶片103可以是存儲晶片;但是,可以不限於此。在另一示例中,半導體晶片103可以是已知的良好晶粒(Known Good Die,KGD)晶片,但是不限於此。根據一個實施例,可以透過使用包括例如環氧黏合劑層的晶粒附著膜(die attach film,DAF)102將半導體晶片103黏附到半導體晶片101的頂表面。根據一個實施例,例如,DAF 102具有約0.3W / m-K的熱導率。半導體晶片101和103也可以是半導體晶粒。
根據一個實施例,半導體封裝3a還包括封裝內的散熱元件105,例如虛設矽晶粒,封裝內的散熱元件105透過使用高導熱晶粒附接膜(高導熱DAF)104黏附在半導體晶片103的頂表面上。根據一個實施例,高導熱DAF 104是具有高導熱特性的黏合膜。根據一個實施例,高導熱DAF 104具有比DAF 102更高的導熱率。例如,根據一個實施例,高導熱DAF 104可以具有約2-50W / m-K的導熱率。本實施例中散熱元件105採用高導熱DAF 104安裝在半導體晶片103的頂表面上,可以使半導體晶片101和103產生的熱量透過高導熱DAF 104和散熱元件105快速的散發出去,從而提高散熱效率。
根據一個實施例,半導體封裝3a還包括模塑料500,其密封半導體晶粒101,半導體晶片103和散熱元件105。根據一個實施例,例如,模塑料500可以具有約2-8 W / m-K的導熱率,又例如,模塑料500可以具有1W / m-K的導熱率。本實施例中的高導熱DAF 104的導熱率可以比模塑料500和DAF 102的導熱率都高,因此可以更快的將熱量從半導體封裝中散發出去,特別是將半導體晶片101產生的熱量更高效的傳遞出去。
同樣,在第4圖中,半導體封裝件3b包括基底100,以倒裝晶片方式安裝在基底100上的諸如SoC之類的半導體晶片101,透過使用DAF 102黏附到半導體晶片101上的諸如DRAM晶片之類的半導體晶片103,透過使用高導熱DAF 104黏附到半導體晶片103上的諸如虛設矽晶片之類的散熱元件104。第4圖中的半導體封裝3b與第3圖中的半導體封裝3a不同之處在於,第4圖中的半導體封裝3b的散熱元件105的頂表面105a暴露於空氣,這樣可以進一步提高散熱效率,使熱量透過散熱元件105的頂表面105a更快的散發出去。為了形成這種構造,可以對模塑料500進行拋光或研磨處理。在去除一部分模塑料500之後,散熱元件105的頂表面105a可以與模塑料500的頂表面500a齊平。
在第5圖中,如上描述,透過使用高導熱DAF 104將半導體封裝5a的散熱元件105附接到半導體晶片101的頂表面,來代替將散熱元件105附接到半導體晶片103上。因此,半導體晶片103和散熱元件105都以並排的方式附接到半導體晶片101的頂表面上。由於一般半導體晶片101為主要熱源,因此可以僅將散熱元件105透過高導熱DAF 104安裝到半導體晶片101上,這樣可以更快速的將半導體晶片101產生的熱量散發出去。
同樣,在第6圖中,半導體封裝件5b包括基底100,以倒裝晶片方式安裝在基底100上的諸如SoC之類的半導體晶片101,透過使用DAF 102黏附到半導體晶片101上的諸如DRAM晶片之類的半導體晶片103,透過使用高導熱DAF 104黏附到半導體晶片101上的諸如虛設矽晶片之類的散熱元件104。第6圖中的半導體封裝5b與第5圖中的半導體封裝5a不同之處在於,第6圖中的半導體封裝5b的散熱元件105的頂表面105a暴露於空氣。這樣散熱會更快,半導體晶片101的熱量可以直接透過高導熱DAF 104和散熱元件105到達外界空氣,更快的散熱。
根據一個實施例,半導體晶片101是半導體封裝3a的主要熱源,並且需要將熱量從半導體封裝3a迅速地散發到周圍環境。透過提供第3圖到第6圖的配置,顯著提高了散熱性能(散熱性能提高了約50%)。例如,第6圖中的示例性半導體封裝5b的測量的θJC
可以為大約2.20。θJC
代表從半導體晶片101到散熱路徑的散熱能力,越高表示散熱能力越強。
儘管已經對本發明實施例及其優點進行了詳細說明,但應當理解的是,在不脫離本發明的精神以及申請專利範圍所定義的範圍內,可以對本發明進行各種改變、替換和變更。所描述的實施例在所有方面僅用於說明的目的而並非用於限制本發明。本發明的保護範圍當視所附的申請專利範圍所界定者為准。本領域技術人員皆在不脫離本發明之精神以及範圍內做些許更動與潤飾。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
1、3a、3b:半導體封裝;
10:基板;
10a:上表面;
10b:下表面;
11:射頻結構;
20:IC晶粒;
30:金屬熱界面層;
111:頂部天線層;
112:底部天線層;
113:介電層;
114:金屬跡線;
115:通孔;
116:銅焊盤;
118:導電焊盤;
120:導電結構;
202:凸塊;
210:底部填充物;
310:背面金屬層;
320:焊膏;
4:PCB;
4a:上表面;
4b:下表面;
5:散熱結構;
402:阻焊劑層;
402a:阻焊劑開口;
410:導電導熱墊;
411:狹縫;
412、1001:匹配焊盤;
100:基底;
100a、105a、500a:頂表面;
100b:底表面;
101、103:半導體晶片;
102:晶粒附著膜;
104:高導熱晶粒附接膜;
105:散熱元件;
1002:連接元件;
1011:凸塊;
500:模塑料。
透過閱讀後續的詳細描述和實施例可以更全面地理解本發明,本實施例參照附圖給出,其中:
第1圖是根據本發明的一個實施例的半導體封裝的剖視圖;
第2圖是示出根據本發明的一個實施例的包括第1圖中的半導體封裝的示例性印刷電路板組件的示意性截面圖;
第3圖至第6圖是示出根據本發明的各個實施例的半導體封裝的示意性截面圖。
1:半導體封裝
10:基板
10a:上表面
10b:下表面
11:射頻結構
20:IC晶粒
30:金屬熱界面層
111:頂部天線層
112:底部天線層
113:介電層
114:金屬跡線
115:通孔
116:銅焊盤
118:導電焊盤
120:導電結構
202:凸塊
210:底部填充物
310:背面金屬層
320:焊膏
Claims (10)
- 一種半導體封裝,包括: 基底,包括上表面和與該上表面相對的下表面; 射頻結構,嵌入該基底中,並靠近該基底的上表面; 積體電路晶粒,以倒裝晶片的方式安裝在該基底的下表面上; 導電結構,設置在該基底的下表面上並圍繞該積體電路晶粒佈置;以及 金屬熱界面層,包括與該積體電路晶粒的背面直接接觸的背面金屬層,以及印刷在該背面金屬層上的焊膏。
- 如申請專利範圍第1項所述的半導體封裝,其中,該射頻結構包括:頂部天線層和與該頂部天線層間隔開的底部天線層;以及至少一個介電層,插入在該頂部天線層和該底部天線層之間。
- 如申請專利範圍第1項所述的半導體封裝,其中,該基底包括用於互連的金屬跡線和通孔,該導電結構透過該金屬跡線和該通孔電連接到該基底的該射頻結構。
- 如申請專利範圍第1項所述的半導體封裝,還包括: 底部填充物,位於該積體電路晶粒和該基底的下表面之間的間隙中。
- 如申請專利範圍第1項所述的半導體封裝,其中,該底部填充物,該積體電路晶粒和該金屬熱界面層的組合厚度等於從該基底的下表面測量的該焊球的焊球高度。
- 如申請專利範圍第1項所述的半導體封裝,其中,該焊膏比該背面金屬層厚。
- 一種印刷電路板組件,包括: 印刷電路板,具有直接面對基底的下表面的上表面,其中該印刷電路板包括在該印刷電路板的上表面上的導電導熱墊的陣列,位於該印刷電路板內且位於該導電導熱墊的陣列下方的導熱通孔,安裝在該印刷電路板的下表面的散熱結構,其中該散熱結構與該導熱通孔熱接觸;以及 如申請專利範圍1所述的半導體封裝,安裝在該導電導熱墊的陣列上。
- 如申請專利範圍第7項所述的印刷電路板組件,其中,該焊膏與該導電導熱墊的陣列直接接觸。
- 如申請專利範圍第8項所述的印刷電路板組件,其中,該導電導熱墊之間的狹縫,該狹縫填充有該焊膏。
- 一種半導體封裝,包括: 基底,包括底表面和與該底表面相對的頂表面; 第一半導體晶片,安裝在該基底的頂表面上; 第二半導體晶片,透過晶粒附著膜安裝在該第一半導體晶片上; 散熱元件,透過高導熱晶粒附接膜安裝在該第一半導體晶片上或該第二半導體晶片上;以及 模塑料,封裝該第一半導體晶片,該第二半導體晶片和該散熱元件。
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TWI793024B (zh) * | 2022-05-26 | 2023-02-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法 |
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