TW202025346A - 基板處理裝置、基板處理方法及電腦可讀取的記錄媒體 - Google Patents

基板處理裝置、基板處理方法及電腦可讀取的記錄媒體 Download PDF

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Publication number
TW202025346A
TW202025346A TW108139665A TW108139665A TW202025346A TW 202025346 A TW202025346 A TW 202025346A TW 108139665 A TW108139665 A TW 108139665A TW 108139665 A TW108139665 A TW 108139665A TW 202025346 A TW202025346 A TW 202025346A
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TW
Taiwan
Prior art keywords
ozone
ozone water
liquid
processing
substrate
Prior art date
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TW108139665A
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English (en)
Chinese (zh)
Inventor
天井勝
田中志信
須中郁雄
香川興司
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW202025346A publication Critical patent/TW202025346A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW108139665A 2018-11-14 2019-11-01 基板處理裝置、基板處理方法及電腦可讀取的記錄媒體 TW202025346A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-213548 2018-11-14
JP2018213548 2018-11-14

Publications (1)

Publication Number Publication Date
TW202025346A true TW202025346A (zh) 2020-07-01

Family

ID=70731509

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108139665A TW202025346A (zh) 2018-11-14 2019-11-01 基板處理裝置、基板處理方法及電腦可讀取的記錄媒體

Country Status (5)

Country Link
JP (2) JP7236461B2 (ja)
KR (1) KR102654039B1 (ja)
CN (1) CN112997276A (ja)
TW (1) TW202025346A (ja)
WO (1) WO2020100661A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023282064A1 (ja) 2021-07-06 2023-01-12 東京エレクトロン株式会社 基板処理システム、及び基板処理方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11121417A (ja) * 1997-10-09 1999-04-30 Mitsubishi Electric Corp 半導体基板の処理システムおよび処理方法
JP2000164552A (ja) * 1998-11-24 2000-06-16 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2001035827A (ja) * 1999-07-16 2001-02-09 Memc Kk 高濃度オゾン水、同オゾン水の調製方法、および同オゾン水を使用した洗浄方法
JP2001137798A (ja) * 1999-11-17 2001-05-22 Japan Organo Co Ltd 洗浄用ガス溶解水供給方法及び供給装置
JP4221736B2 (ja) * 2000-07-18 2009-02-12 株式会社ササクラ フォトレジスト膜除去方法及び装置
JP2004241726A (ja) * 2003-02-07 2004-08-26 Sharp Corp レジスト処理方法およびレジスト処理装置
JP4172769B2 (ja) 2003-03-10 2008-10-29 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2004327610A (ja) * 2003-04-23 2004-11-18 Mitsubishi Electric Corp 半導体ウエハのフォトレジスト除去方法
JP2005019876A (ja) * 2003-06-27 2005-01-20 Trecenti Technologies Inc 半導体装置の製造方法、オゾン水洗浄システムおよびオゾン水濃度制御システム
JP4513122B2 (ja) * 2004-03-31 2010-07-28 栗田工業株式会社 オゾン水供給方法及びオゾン水供給装置
JP2006278644A (ja) * 2005-03-29 2006-10-12 Kazutoshi Yamazaki 洗浄方法および洗浄装置
JP5006111B2 (ja) 2007-06-12 2012-08-22 国立大学法人 筑波大学 フォトレジスト除去装置
KR100904452B1 (ko) * 2007-12-06 2009-06-24 세메스 주식회사 오존수혼합액 공급장치 및 방법, 그리고 이를 구비하는기판 처리 설비
JP2010177535A (ja) * 2009-01-30 2010-08-12 Toyota Motor Corp 半導体ウェハ洗浄システム
JP2013045961A (ja) * 2011-08-25 2013-03-04 Dainippon Screen Mfg Co Ltd 基板洗浄方法、基板洗浄液および基板処理装置
JP6168271B2 (ja) * 2012-08-08 2017-07-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN105336645B (zh) * 2014-08-14 2021-04-30 无锡华瑛微电子技术有限公司 利用含臭氧的流体处理半导体晶片表面的装置及方法

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Publication number Publication date
JP7236461B2 (ja) 2023-03-09
WO2020100661A1 (ja) 2020-05-22
KR102654039B1 (ko) 2024-04-02
JP2023029455A (ja) 2023-03-03
JPWO2020100661A1 (ja) 2021-09-30
KR20210088704A (ko) 2021-07-14
CN112997276A (zh) 2021-06-18

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