TW202025346A - Substrate processing apparatus, substrate processing method, and computer-readable recording medium - Google Patents

Abstract

The present disclosure describes a substrate processing apparatus that can supply ozone water having a stable ozone concentration to a substrate; a substrate processing method; and a computer-readable recording medium. The substrate processing apparatus comprises: an ozone gas supply unit configured to supply ozone gas; an adjustment liquid supply unit configured to supply an adjustment liquid having a proscribed hydrogen ion concentration; a dissolution unit configured to dissolve the ozone gas in the adjustment liquid, thereby generating ozone water; at least one processing chamber configured to clean a substrate with the ozone water; and a liquid feeding unit configured to feed the ozone water from the dissolving unit to the at least one processing chamber through a liquid feed line.

Description

Substrate processing device, substrate processing method and computer readable recording medium

The present invention relates to a substrate processing device, a substrate processing method, and a computer-readable recording medium.

Patent Document 1 discloses a substrate processing apparatus that removes adherents (for example, photoresist film, contaminants, oxide film, etc.) attached to the substrate by supplying high-concentration ozone water to the substrate. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2008-311256 A

[The problem to be solved by the invention]

It is well known that the ozone concentration of high-concentration ozone water decays in a short time. Therefore, the present disclosure describes a substrate processing apparatus, a substrate processing method, and a computer-readable recording medium that can supply ozone water with a stable ozone concentration to the substrate. [Means to solve the problem]

A substrate processing apparatus according to an aspect of the present disclosure includes: an ozone gas supply unit configured to supply ozone gas; an adjustment liquid supply unit configured to supply an adjustment liquid representing a specific hydrogen ion concentration; and a dissolving unit, which is It is configured to dissolve ozone gas in the adjustment liquid to generate ozone water; at least one processing chamber is configured to clean the substrate with ozone water; and a liquid feeding part is configured to remove ozone through a liquid feeding pipe Water is sent from the dissolving part to at least one processing chamber. [Effects of Invention]

With the substrate processing, substrate processing method, and computer-readable recording medium of the present disclosure, ozone water with a stable ozone concentration can be supplied to the substrate. [A brief description of the schema]

Fig. 1 is a plan view schematically showing an example of a substrate processing system. [Fig. 2] A diagram showing an example of a substrate processing apparatus. [Fig. 3] is a block diagram showing an example of the main parts of the substrate processing system. [Fig. 4] is a schematic diagram showing an example of the hardware configuration of the controller. [Figure 5] is a flow chart for explaining the wafer processing engineering. [Fig. 6] A diagram showing another example of the substrate processing apparatus.

Hereinafter, an example of the embodiment according to the present disclosure will be described in detail with reference to the drawings. In the following description, the same symbols are used for the elements with the same elements or functions, and repeated descriptions are omitted.

[Construction of substrate processing system] FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to this embodiment. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is set as the vertical upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are adjacently installed.

The carry-in and carry-out station 2 includes a carrier placing section 11 and a conveying section 12. In the carrier mounting portion 11, a plurality of carriers C are mounted, and the plurality of carriers C accommodate a plurality of substrates in a horizontal state, and in this embodiment are semiconductor wafers (hereinafter referred to as wafers W).

The conveying section 12 is provided adjacent to the carrier placing section 11, and includes a substrate conveying device 13 and a receiving section 14 inside. The substrate transport device 13 includes a wafer holding mechanism that holds the wafer W. Furthermore, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfer the wafer W between the carrier C and the receiving unit 14 using a wafer holding mechanism.

The processing station 3 is installed adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15 and a plurality of processing units 16. The plural processing units 16 are arranged in parallel on both sides of the conveying unit 15.

The transport unit 15 includes a board transport device 17 inside. The substrate transport device 17 includes a wafer holding mechanism that holds the wafer W. Furthermore, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfer the wafer W between the receiving unit 14 and the processing unit 16 using a wafer holding mechanism.

The processing unit 16 performs specific substrate processing on the wafer W conveyed by the substrate conveying device 17.

Furthermore, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the memory unit 19.

Moreover, such a program is recorded in a storage medium readable by a computer, even if it is installed in the storage unit 19 of the control device 4 from the storage medium. As a storage medium that can be read by a computer, for example, there are hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, etc.

In the general substrate processing system 1 as described above, the substrate transport device 13 of the loading and unloading station 2 first takes out the wafer W from the carrier C placed on the carrier placing portion 11, and places the taken out wafer W on the receiving部14. The wafer W placed on the receiving unit 14 is taken out from the receiving unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

After the wafer W carried into the processing unit 16 is processed by the processing unit 16, it is carried out from the processing unit 16 by the substrate conveying device 17 and placed on the receiving unit 14. Then, the processed wafer W placed on the receiving section 14 is returned to the carrier C of the carrier placing section 11 by the substrate conveying device 13.

[Construction of substrate processing equipment] Next, referring to FIGS. 2 to 4, the configuration of the substrate processing apparatus 10 included in the substrate processing system 1 will be described. The substrate processing apparatus 10 has a function of supplying ozone water to the wafer W and removing the deposits on the surface of the wafer W.

The wafer W may have a disc shape, or a plate shape other than a circle such as a polygon. Even if the wafer W has a notch part with a part notch. The notch may be, for example, a groove (a groove such as a U-shape, a V-shape, etc.), or a straight portion extending linearly (a so-called orientation plane). The wafer W may be various substrates such as semiconductor substrates, glass substrates, mask substrates, FPD (Flat Panel Display) substrates and others. Even if the diameter of the wafer W is about 200 mm to 450 mm, for example. Specific examples of the film F include TiN film, Al film, tungsten film, SiN film, SiO ₂ film, polysilicon film, and thermal oxide film (Th-Ox).

As shown in FIG. 2, the substrate processing apparatus 10 includes a plurality of processing units 16, an ozone water supply unit 100, an alkaline solution supply unit 200, a rinse liquid supply unit 300, a liquid discharge unit 400, an exhaust unit 500, and a control device 4 ( The control unit 18).

[Processing Unit] The processing unit 16 includes a processing chamber 16a, a rotation holding portion 16b, and nozzles N1 and N2. The processing chamber 16a is configured to be able to take out and put the wafer W through a gate valve (not shown). The rotation holding portion 16b is configured to hold the wafer W to rotate, and is arranged in the processing chamber 16a.

The nozzles N1 and N2 are arranged in the processing chamber 16a so as to be positioned above the wafer W in a state where the wafer W is held by the rotation holding portion 16b. Ozone water is ejected from the nozzle N1. The rinsing fluid is discharged from the nozzle N2. In addition, in FIG. 2, although the arrangement of three processing units 16 (16A to 16C) is illustrated, the number of processing units 16 is not particularly limited. That is, even if the substrate processing apparatus 10 includes at least one processing unit 16.

[Ozone Water Supply Department] The ozone water supply unit 100 has a function of generating ozone water and a function of supplying the generated ozone water to the wafer W through the nozzle N1. The ozone water supply unit 100 includes an ozone gas supply unit 110, a conditioning liquid supply unit 120, a dissolving unit 130, and a liquid supply unit 140.

The ozone gas supply unit 110 is configured to generate ozone gas from oxygen. The ozone gas supply unit 110 is connected to the dissolving unit 130 via a pipe D1, and supplies the generated ozone gas to the dissolving unit 130. The adjustment liquid supply unit 120 includes liquid sources 121 and 122, a circulation tank 123, a pump 124, a heater 125, a hydrogen ion concentration monitor 126, and valves V1 to V3.

The liquid source 121 is configured to store an acid solution. The acidic solution may be a solution of an organic acid (for example, citric acid, acetic acid, carbonic acid), even a solution of an inorganic acid (for example, hydrochloric acid, nitric acid), or a solution of a mixed organic acid and an inorganic acid. In the case of using an acidic solution composed of a mixture of organic acid and inorganic acid (for example, hydrochloric acid), the solubility of the resist becomes high. The liquid source 121 is connected to the circulation tank 123 via the pipe D2, and supplies the acidic solution to the circulation tank 123.

The liquid source 122 is constituted as storage water (for example, pure water, DIW (Deionized Water)). The liquid source 122 is connected to the circulation tank 123 via pipes D2 and D3, and supplies water to the circulation tank 123. The pipe D3 is connected to the middle of the pipe D2. Therefore, at the junction of the pipes D2 and D3, an acidic solution and water are mixed to produce a conditioning solution. The adjustment solution is adjusted to indicate a specific hydrogen ion concentration. The hydrogen ion concentration of the adjustment liquid may be adjusted based on, for example, the flow rate and concentration of the acidic solution supplied from the liquid source 121 and the flow rate of water supplied from the liquid source 122. Even if the hydrogen ion concentration of the adjustment liquid is about pH1 to pH4, for example.

The circulation tank 123 is configured to temporarily store the adjusting liquid, and to circulate the adjusting liquid through the pipe D4. By circulating the adjustment liquid through the circulation tank 123 and the pipe D4, the water and the acidic solution can be sufficiently uniformly mixed during the circulation process.

The pipe D4 connects the lower part and the upper part of the circulation tank 123. To the pipe D4, a pump 124, a heater 125, a hydrogen ion concentration monitor 126, and a valve V3 are connected in this order from the upstream side. The pump 124 is configured to operate in response to a control signal from the control device 4, and sends the adjusting liquid in the circulation tank 123 to the downstream side through the pipe D4. The heater 125 is configured to operate in response to a control signal from the control device 4 to heat the adjustment liquid so that the adjustment liquid reaches a specific temperature (for example, about 22° C. to 85° C.).

The hydrogen ion concentration monitor 126 is configured to acquire data on the hydrogen ion concentration of the adjustment liquid flowing through the pipe D4. The data acquired by the hydrogen ion concentration monitor 126 is sent to the control device 4.

The valves V1 to V3 are respectively installed in the middle of the pipes D2 to D4. The valve V1 is configured to operate in response to a control signal from the control device 4 to control the flow rate of the acid solution flowing through the pipe D2. The valve V2 is configured to operate in response to a control signal from the control device 4 to control the flow rate of water flowing in the pipe D3.

The valve V3 is configured to operate in response to the control signal from the control device 4, and can switch the flow path of the adjustment liquid circulating in the pipe D4 and the circulation tank 123, and the adjustment liquid is discharged from the circulation tank 123 through the pipes D4 and D5 to the dissolving part 130 flow path. The valve V3 may be, for example, a three-directional solenoid valve (solenoid valve). The pipe D5 connects the valve V3 and the dissolving part 130.

The dissolving unit 130 is configured to dissolve the ozone gas supplied from the ozone supply unit 110 in the adjustment liquid supplied from the adjustment liquid supply unit 120 to generate ozone water. Even if the dissolving part 130 is a dissolving module that allows ozone gas to flow on the primary side of the porous membrane and water flows on the secondary side of the porous membrane to contact gas and liquid and dissolve the ozone gas in water.

The liquid feeding part 140 has a function of sending the ozone water generated in the dissolving part 130 to each of the processing units 16A to 16C or the liquid discharge part 400. The liquid feeding unit 140 includes pipes D6 to D9 (liquid feeding pipes), an auxiliary heater 141, a temperature monitor 142, an ozone concentration monitor 143, and valves V4 to V6.

The pipe D6 extends to connect the dissolving part 130 and the draining part 400. The auxiliary heater 141, the temperature monitor 142, and the ozone concentration monitor 143 are connected to the pipe D6 in this order from the upstream side. The auxiliary heater 141 is configured to operate in response to a control signal from the control device 4, and heat the ozone water so that the ozone water becomes a specific temperature (for example, about 22°C to 85°C). The temperature monitor 142 is configured to acquire data on the temperature of the ozone water flowing through the pipe D6. The data acquired by the temperature monitor 142 is sent to the control device 4.

The ozone concentration monitor 143 is configured to obtain data on the ozone concentration of the ozone water circulating through the pipe D6. That is, the ozone concentration monitor 143 acquires data on the ozone concentration of ozone water on the downstream side of the dissolving unit 130. The data acquired by the ozone concentration monitor 143 is sent to the control device 4. Even if the ozone concentration monitor 143 is installed at the path length from the dissolving part 130 to the ozone concentration monitor 143, and the path length from the dissolving part 130 to each processing unit 16A-16C (to each nozzle N1) Slightly equal positions are also acceptable.

The pipes D7 to D9 are branched from the pipe D6 in the middle, and are connected to the nozzle N1 of each processing unit 16A to 16C. The pipes D7 and D8 respectively include adjusting parts D7a and D8a for ensuring a specific path length. Even if the adjustment parts D7a and D8a are, for example, the pipes D7 and D8 partially meander, and the pipes D7 and D8 may be partially spirally extended. Even if these adjustment parts D7a and D8a exist, the length of each path from the dissolving part 130 to each processing unit 16A-16C (to each nozzle N1) may be approximately equal. In addition, the pipe D9 may include an adjustment part.

The valves V4 to V6 are respectively installed in the middle of the pipes D7 to D9. The valves V4 to V6 are configured to operate in response to a control signal from the control device 4, and the ozone water flowing through the pipes D7 to D9 is mixed with the alkali adjustment solution supplied from the alkali solution supply unit 200. Even if the valves V4 to V6 are, for example, a mixing faucet (mixing valve).

[Alkaline Solution Supply Unit] The alkaline solution supply unit 200 has a function of generating an alkali adjustment solution, and has a function of supplying the generated alkali adjustment solution to the wafer W through the nozzle N1. The alkaline solution liquid supply unit 200 includes liquid sources 201 and 202, a circulation tank 203, a pump 204, a heater 205, a hydrogen ion concentration monitor 206, and valves V7 and V8.

The liquid source 201 is configured to store an alkaline solution. Even if the alkaline solution is ammonia water, for example. The liquid source 201 is connected to the circulation tank 203 via the pipe D10, and supplies the alkaline solution to the circulation tank 203.

The liquid source 202 is the same as the liquid source 122, and constitutes storage water (for example, pure water, DIW (Deionized Water)). The liquid source 202 is connected to the circulation tank 203 via pipes D10 and D11 and supplies water to the circulation tank 203. The pipe D11 is connected to the middle of the pipe D10. Therefore, at the junction of pipes D10 and D11, an alkaline solution and water are mixed to produce an alkaline adjustment solution. The alkali adjustment solution is adjusted to indicate a specific hydrogen ion concentration. The hydrogen ion concentration of the adjustment liquid may be adjusted according to, for example, the flow rate and concentration of the alkaline solution supplied from the liquid source 201, and the flow rate of water supplied from the liquid source 122. Even if the hydrogen ion concentration of the alkali adjustment solution is about pH 9 to pH 13, for example.

The circulation tank 203 is configured to temporarily store the alkali adjustment solution and circulate the alkali adjustment solution through the pipe D12. By passing the alkali adjustment solution through the circulation tank 203 and the pipe D12, the water and the alkali solution can be sufficiently uniformly mixed during the circulation process.

The pipe D12 connects the lower part and the upper part of the circulation tank 203. A pump 204, a heater 205, and a hydrogen ion concentration monitor 206 are connected to the pipe D12 in this order from the upstream side. The pump 204 is configured to operate in response to a control signal from the control device 4, and sends the adjusting liquid in the circulation tank 203 to the downstream side through the pipe D12. The heater 205 is configured to operate in response to a control signal from the control device 4 to heat the alkali adjustment solution so that the alkali adjustment solution reaches a specific temperature (for example, about 22°C to 85°C).

The hydrogen ion concentration monitor 206 is configured to acquire data on the hydrogen ion concentration of the alkali adjustment solution flowing through the pipe D12. The data acquired by the hydrogen ion concentration monitor 206 is sent to the control device 4.

The pipe D12 is connected to pipes D13 to D15 that are branched from the middle. The pipe D13 branched from the pipe D12 is connected to the valve V4. The pipe D14 branched from the pipe D12 on the downstream side of the pipe D13 is connected to the valve V5. The pipe D15 branched from the pipe D12 on the downstream side of the pipe D14 is connected to the valve V6. Therefore, the alkali adjustment solution supplied from the alkaline solution supply unit 200 is mixed with the ozone water supplied from the ozone water supply unit 100 in the valves V4 to V6.

Valves V7 and V8 are provided in the middle of pipes D10 and D11, respectively. The valve V7 is configured to operate in response to a control signal from the control device 4 to control the flow rate of the alkaline solution flowing through the pipe D10. The valve V8 is configured to operate in response to a control signal from the control device 4 to control the flow rate of water flowing in the pipe D11.

[Flushing fluid supply unit] The rinse liquid supply unit 300 has a function of supplying a rinse liquid to the wafer W through the nozzle N2. The rinse liquid supply unit 300 includes a liquid source 301, a pump 302, and valves V9 to V11. The liquid source 301 is configured to store flushing liquid. The rinsing fluid is used for rinsing, for example, chemical fluids and attachments attached to the substrate. Even if the rinsing fluid is water (for example, pure water, DIW (Deionized Water)). The liquid source 301 extends toward the respective processing units 16A to 16C via pipes D16 to D19. The pipes D17 to D19 are branched from the pipe D16 in the middle, and are connected to the nozzle N2 of each processing unit 16A to 16C. Therefore, the rinse liquid supplied from the liquid source 301 is supplied to the nozzle N2 of each of the processing units 16A to 16C.

The pump 302 is installed in the middle of the pipe D16. The pump 302 is configured to operate in response to a control signal from the control device 4, and sends the rinse liquid to the downstream side through the pipe D16. The valves V9 to V11 are respectively installed in the middle of the pipes D17 to D19. The valves V9 to V11 are each configured to operate in response to a control signal from the control device 4 to control the flow rate of the flushing liquid flowing through the pipes D17 to D19.

[Draining Department] The drain part 400 includes a drain processing unit 401 and a valve V12. The drainage treatment unit 401 is configured to decompose ozone contained in the ozone water into oxygen. Decomposition of ozone can use, for example, ozone decomposition catalyst, activated carbon, etc. The drainage processing unit 401 is connected to the dissolving part 130 via a pipe D6. Therefore, in the drainage treatment unit 401, the ozone water generated in the ozone water supply unit 100 but not supplied to the nozzle N1 flows in through the pipe D6. The valve V12 is installed in the middle of the pipe D6. The valve V12 is configured to operate in response to a control signal from the control device 4 to control the flow rate of ozone water flowing through the pipe D16.

The drainage processing unit 401 is connected to each processing unit 16A to 16C by a pipe D20 divided into three. Therefore, in the liquid discharge processing unit 401, the ozone water supplied to the cleaning process of the wafer W in the respective processing units 16A to 16C flows through the pipe D20. The liquid processed according to the drainage processing unit 401 is discharged out of the system.

[Exhaust Department] The exhaust part 500 includes a drainage treatment unit 501 and a pump 502. The exhaust treatment unit 501 is configured to decompose ozone gas into oxygen. Decomposition of ozone can use, for example, ozone decomposition catalyst, activated carbon, etc. The exhaust treatment unit 501 is connected to the treatment units 16A to 16C by a pipe D21 divided into three. Therefore, in the exhaust treatment unit 501, through the pipe D21, the ozone gas generated inside when the respective treatment units 16A to 16C are cleaned. The processed gas according to the exhaust processing unit 501 is discharged out of the system.

The pump 502 is installed in the middle of the pipe D21. The pump 502 is configured to operate in response to a control signal from the control device 4, and to send ozone gas to the downstream side through the pipe D21.

[Control device] The control device 4 includes a hydrogen ion concentration control unit M1, a liquid supply control unit M2, a discharge control unit M3, and an exhaust control unit M4 as shown in, for example, FIG. 3, as functions for controlling the substrate processing apparatus 10 Sexual composition (functional modules). These functional modules are formed by the cooperation of the control unit 18 and the memory unit 19 of the control device 4. In addition, the storage unit 19 stores, for example, programs read from the recording medium RM, various data (so-called processing recipes) when processing the wafer W, and setting data input from the operator via an external input device (not shown). And so on.

Even if the hydrogen ion concentration control unit M1 adjusts the hydrogen ion concentration of the adjustment liquid generated by the adjustment liquid supply unit 120 in response to the ozone concentration acquired by the ozone concentration monitor 143, the adjustment liquid supply unit 120 may be controlled. However, it is well known that the higher the hydrogen ion concentration of the adjustment solution (the lower the pH), the easier it is for ozone gas to dissolve in the adjustment solution. Therefore, even when the ozone concentration obtained by the ozone concentration monitor 143 is lower than a specific value, the hydrogen ion concentration control unit M1 instructs the valves V1 and V2 to increase the supply of acidic solution from the liquid source 121 and decrease At least one of the supply amounts of water from the liquid source 122 may be sufficient. For example, even when the ozone concentration obtained by the ozone concentration monitor 143 is higher than a specific value, the hydrogen ion concentration control unit M1 instructs the valves V1 and V2 to reduce the supply of acidic solution from the liquid source 121 and increase At least one of the supply amounts of water from the liquid source 122 may be sufficient.

Even if the hydrogen ion concentration control unit M1 adjusts the hydrogen ion concentration of the alkali adjustment solution generated in the alkali solution supply unit 200 in response to the hydrogen ion concentration acquired by the hydrogen ion concentration monitor 206, it controls the alkaline solution supply unit 200 It is also possible. For example, even if the hydrogen ion concentration obtained by the ozone concentration monitor 143 is higher than a specific value, the hydrogen ion concentration control unit M1 instructs the valves V7 and V8 to increase the supply amount of alkaline solution from the liquid source 201, and At least one of the supply amounts of water from the liquid source 202 may be reduced. For example, even when the hydrogen ion concentration obtained by the hydrogen ion concentration monitor 206 is lower than a specific value, the hydrogen ion concentration control unit M1 instructs the valves V7 and V8 to reduce the supply amount of alkaline solution from the liquid source 201 , And at least one of increasing the amount of water supplied from the liquid source 202 may be used.

The liquid feeding control part M2 may control the pump 124 and the valve V3 even if it switches between the circulation of the adjustment liquid through the circulation tank 123 and the pipe D4 and the supply of the adjustment liquid to the dissolving part 130. The liquid feeding control unit M2 is the temperature obtained by the temperature monitor 142 is above a specific value, the hydrogen ion concentration obtained by the hydrogen ion concentration monitors 126 and 206 is above the specified value, and when the ozone concentration obtained by the ozone concentration monitor 143 is When the specific value is higher than the specified value, the ozone water generated in the dissolving part 130 may be sent to at least one of the processing units 16A to 16C, and the pump 124 and the valves V3 to V6 may be controlled. At this time, the liquid feeding control unit M2 may control the valves V3 to V6 so that the alkali adjustment liquid generated in the alkaline solution supply unit 200 is mixed with ozone water. The liquid feeding control part M2 is used when the ozone water is fed to any one of the processing units 16A-16C, and controls the valves V3 to V6 so as not to send the ozone water to the remaining processing units 16A-16C. can. The liquid feeding control part M2 is designed to send the washing liquid of the liquid source 301 to at least one of the processing units 16A-16C, and may control the valves V9-V11.

The drainage control part M3 controls the valve V12 to discharge the ozone water to the outside of the system when the ozone water is not sent to at least one of the processing units 16A-16C. Even if the temperature obtained by the temperature monitor 142 is less than the specified value, the discharge control unit M3 has the hydrogen ion concentration obtained by the hydrogen ion concentration monitors 126 and 206 less than the specified value, or the ozone concentration obtained by the ozone concentration monitor 143 is less than the specified value. At the time of a specific value, the ozone water generated in the dissolving part 130 may be discharged to the outside of the system, and the valve V12 may be controlled. Or, even when the ozone water is not sent to at least one of the processing units 16A to 16C, the drainage control unit M3 can control the valve V12 to discharge the ozone water out of the system.

The exhaust control unit M4 may control the pump 502 even if it sucks the gas in the processing units 16A-16C and exhausts it to the outside of the system.

The hardware of the control device 4 is constituted by, for example, one or a plurality of computers for control. The control device 4 has, for example, a circuit 4A shown in FIG. 4 as a hardware configuration. The circuit 4A may be composed of circuit elements (circuitry). Specifically, the circuit 4A has a processor 4B, a memory 4C (memory part), a memory 4D (memory part), and an input/output port 4E. The processor 4B cooperates with at least one of the memory 4C and the storage 4D to execute a program to execute the input and output of the signal through the input and output port 4E, thereby constituting the above-mentioned functional modules. The input/output port 4E is between the processor 4B, the memory 4C, the storage 4D and the various parts of the substrate processing apparatus 10 for input and output of signals.

The substrate processing apparatus 10 may include, for example, one control device 4, or may include a controller group (control section) composed of a plurality of control devices 4. In the case where the substrate processing apparatus 10 includes a controller group, the above-mentioned functional modules may be realized by one control device 4 respectively, or even by a combination of two or more control devices 4. In the case that the control device 4 is composed of a plurality of computers (circuit 4A), the above-mentioned functional modules may be realized by one computer (circuit 4A) respectively, even if realized by a combination of two or more computers (circuit 4A) . The control device 4 may have plural processors 4B. In this case, even if the above-mentioned functional modules are realized by one or a plurality of processors 4B, respectively.

[Substrate processing method] Next, referring to FIG. 5, a cleaning processing method (substrate processing method) of the wafer W will be described. First, a preparation process for cleaning the wafer W is performed (refer to step S1). In the preparation process, the liquid feed control unit M2 and the discharge control unit M3 control the pump 124 and the valve V12 based on the data input from the hydrogen ion concentration monitor 126, the temperature monitor 142, and the ozone concentration monitor 143.

For example, the liquid supply control unit M2 and the discharge control unit M3 determine whether any one of the data acquired by the temperature monitor 142 and the ozone concentration monitor 143 is a specific value or more. As a result, if any of the data acquired by the hydrogen ion concentration monitor 126, the temperature monitor 142, and the ozone concentration monitor 143 is less than the specified value, the ozone water is not sent to the processing units 16A-16C. In the method of discharging to the outside of the system, the liquid supply control unit M2 closes the valves V4 to V6, and the discharge control unit M3 opens the valve V12.

Even if the data of the hydrogen ion concentration monitor 126 is less than the specified value, the hydrogen ion concentration control unit M1 may control the valves V1 and V2 so that the hydrogen ion concentration of the adjusting solution becomes more than the specified value. Even if the data of the temperature monitor 142 is less than the specified value, the control device 4 may control the heater 125 in such a way that the temperature of the adjustment liquid becomes higher than the specified value. Even if the data of the ozone concentration monitor 143 is less than the specified value, the hydrogen ion concentration control unit M1 may control the valves V1 and V2 so that the ozone concentration of the ozone water becomes more than the specified value.

In addition, when any one of the data acquired by the hydrogen ion concentration monitor 126, the temperature monitor 142, and the ozone concentration monitor 143 is greater than a specific value, the liquid supply control unit M2 and the discharge control unit M3 determine that it is As a preparer who performs the cleaning process on the wafer W (preparation process completed).

When the preparation process is completed, the transfer process of the wafer W is then performed (refer to step S2). For example, the control device 4 controls the substrate transfer devices 13 and 17 to transfer one wafer W in the carrier C to the processing unit 16A. In this way, the wafer W is held by the rotation holding portion 16b in the processing unit 16A.

When the transfer processing of the wafer W to the processing unit 16A is completed, then the supply processing of ozone water to the processing unit 16A is performed (refer to step S3). For example, in a manner of delivering ozone water to the processing unit 16A, the delivery control unit M2 opens the valve V4 and closes the valves V5 and V6, while the drainage control unit M3 closes the valve V12. Accordingly, ozone water is supplied from the nozzle N1 to the wafer W in the processing unit 16A, and the wafer W is cleaned by the ozone water.

In parallel with the supply processing of ozone water to the processing unit 16A, the wafer W is transported (refer to step S3). For example, the control device 4 controls the substrate transfer devices 13 and 17 to transfer one wafer W in the carrier C to the processing unit 16B. In this way, the wafer W is held by the rotation holding portion 16b in the processing unit 16B.

When the supply processing of ozone water to the processing unit 16A is completed, next, the supply processing of the rinse liquid to the processing unit 16A is performed (refer to step S4). For example, in a manner that the flushing liquid is sent to the processing unit 16A, the liquid sending control unit M2 opens the valve V9 and closes the valves V10 and V11. Accordingly, the rinse liquid is supplied from the nozzle N2 to the wafer W in the processing unit 16A, and the wafer W is rinsed according to the rinse liquid. Even if the wafer W to be rinsed is returned to the carrier C by, for example, the substrate conveying devices 13 and 17.

In parallel with the supply processing of the rinse liquid to the processing unit 16A, the supply processing of ozone water to the processing unit 16B is performed (refer to step S4). For example, in a manner of delivering ozone water to the processing unit 16B, the delivery control unit M2 opens the valve V5 and closes the valves V4 and V6, and the drainage control unit M3 closes the valve V12. Accordingly, ozone water is supplied from the nozzle N1 to the wafer W in the processing unit 16B, and the wafer W is cleaned by the ozone water. In addition, the supply processing of ozone water to the processing unit 16B may be performed even after the ozone water in the processing unit 16A is stopped, or even after the supply processing of the rinse liquid to the processing unit 16A starts.

In parallel with the supply processing of the rinse liquid to the processing unit 16A, the wafer W is transported (refer to step S4). For example, the control device 4 controls the substrate conveying devices 13 and 17 to convey one wafer W in the carrier C to the processing unit 16C. Accordingly, the wafer W is held by the rotation holding portion 16b in the processing unit 16C.

When the supply processing of ozone water to the processing unit 16B is completed, next, the supply processing of the rinse liquid to the processing unit 16B is performed (refer to step S5). For example, in a manner that the flushing liquid is sent to the processing unit 16B, the liquid sending control unit M2 opens the valve V10 and closes the valves V9 and V11. According to this, the rinse liquid is supplied from the nozzle N2 to the wafer W in the processing unit 16B, and the wafer W is rinsed according to the rinse liquid. The wafer W to be rinsed may be returned to the carrier C by, for example, the substrate conveying devices 13 and 17.

In parallel with the supply processing of the rinse liquid to the processing unit 16B, the supply processing of ozone water to the processing unit 16C is performed (refer to step S5). For example, in a manner of delivering ozone water to the processing unit 16C, the liquid delivery control unit M2 opens the valve V6 and closes the valves V4 and V5, and the drainage control unit M3 closes the valve V12. Accordingly, the ozone water is supplied from the nozzle N1 to the wafer W of the processing unit 16C, and the wafer W is cleaned by the ozone water. In addition, the supply processing of ozone water to the processing unit 16C may be performed even after the ozone water in the processing unit 16B is stopped, or even after the supply processing of the rinse liquid to the processing unit 16B starts.

When the supply process of the ozone water to the processing unit 16C is completed, next, the supply process of the rinse liquid to the processing unit 16C is performed (refer to step S6). For example, in order to send the rinse liquid to the processing unit 16C, the liquid sending control unit M2 opens the valve V11 and closes the valves V9 and V10. Accordingly, the rinse liquid is supplied from the nozzle N2 to the wafer W in the processing unit 16C, and the wafer W is rinsed according to the rinse liquid. The wafer W to be rinsed may be returned to the carrier C by, for example, the substrate conveying devices 13 and 17.

[effect] According to the above example, before the ozone water is supplied to the processing unit 16, the ozone water is generated in the dissolving part 130. Therefore, the ozone water is supplied to the processing unit 16 before the ozone concentration of the ozone water is greatly attenuated. Therefore, ozone water with a stable ozone concentration can be supplied to the wafer W.

According to the above example, in accordance with the ozone concentration acquired by the ozone concentration monitor 143, the hydrogen ion concentration of the adjustment liquid generated in the adjustment liquid supply unit 120 is adjusted. Therefore, the ozone concentration of ozone water can be maintained at an appropriate value.

However, the ozone concentration of the ozone water starts to attenuate immediately after the ozone water is generated by the dissolving part 130. Therefore, according to the above example, the length of the path from the dissolving part 130 to the ozone concentration monitor 143 can be made substantially equal to the length of the path from the dissolving part 130 to the respective processing units 16A to 16C. Therefore, the ozone concentration of the ozone water when it is supplied to each of the processing units 16A to 16C can be obtained indirectly by the ozone concentration monitor 143. Therefore, it is possible to perform the cleaning process of the wafer W with ozone water more accurately.

According to the above example, the path length from the dissolving part 130 to the processing units 16A to 16C can be set to be approximately equal. Therefore, the attenuation amount of the ozone concentration until the ozone water reaches the respective processing units 16A to 16C from the dissolving part 130 becomes approximately equal. Therefore, even if the wafer W is cleaned in any one of the processing units 16, a uniform cleaning result can be obtained.

According to the above example, the adjustment liquid supply unit is configured to circulate the adjustment liquid. Therefore, in the process of adjusting the liquid circulation, the water and the acidic solution are sufficiently uniformly mixed. Therefore, in the dissolving part 130, the ozone gas can be stably dissolved in the conditioning liquid.

According to the above example, the alkali solution supply unit 200 can supply the alkali adjustment solution to the pipes D7 to D9 via the valves V4 to V6. In this case, the alkaline solution that reduces the solubility of the ozone gas direction adjustment liquid is mixed with the ozone water after the ozone water is produced. Therefore, it is possible to suppress the decrease in the ozone concentration of the ozone water, and also to remove the deposits adhering to the wafer W by the alkali component.

According to the above example, if any one of the data acquired by the hydrogen ion concentration monitor 126, the temperature monitor 142, and the ozone concentration monitor 143 is a specific value or more, the liquid supply control unit M2 and the discharge control unit M3 can control the pump 124 and the valves V3 to V6 by sending the ozone water generated in the dissolving part 130 to at least one of the processing units 16A-16C. In this case, the ozone concentration of the ozone water supplied to the processing unit 16 is stably maintained above a specific value. Therefore, a uniform cleaning result can be obtained.

According to the above example, the supply of ozone water to the processing unit 16B is performed after the ozone water in the processing unit 16A stops, and the ozone water supply to the processing unit 16C can be processed in the processing unit 16B. After the ozone water is stopped. That is, when the ozone water is sent to any one of the processing units 16A to 16C, the ozone water is not sent to the remainder of the processing units 16A to 16C. In this case, the cleaning process of the wafer W by ozone water is not performed at the same time in each of the processing units 16A to 16C. Therefore, ozone water with a stable ozone concentration is supplied to each of the processing units 16A to 16C. Therefore, even if the wafer W is cleaned in any of the processing units 16A to 16C, a uniform cleaning result can be obtained.

According to the above example, the drain control unit M3 can control the valve V12 to drain the ozone water out of the system when the ozone water is not sent to at least one of the processing units 16A-16C. In this case, since it is difficult to retain ozone water in the pipes D6 to D9 (liquid feeding pipes), the ozone concentration of the ozone water can be more stabilized.

[Modifications] The above description has been given in detail for the embodiments related to the present disclosure, but various modifications may be added to the above-mentioned embodiments without departing from the scope of the patent application and the scope thereof.

(1) Even as shown in FIG. 6, the adjustment liquid supply unit 120 does not include the circulation tank 123 and the like, and does not circulate the adjustment liquid in which the acidic solution from the liquid source 121 and the water from the liquid source 122 are mixed, but directly supplies to Dissolving part 130. In this case, the liquid sources 121 and 122 are connected to the valve V13 via pipes D2 and D3, respectively. A valve V1 is installed in the pipe D2. The pipe D3 is provided with a valve V2 and a heater 125 in this order from the upstream side. The valve V13 is configured to operate in response to a control signal from the control device 4 to mix the acidic solution flowing in the pipe D2 and the water flowing in the pipe D3. The valve V13 may be, for example, a mixing faucet (mixing valve).

(2) The dissolving part 130 may be a plurality of dissolving modules connected in series. In this case, ozone gas that is not dissolved in the conditioning liquid in the upstream dissolution module can be supplied to the downstream dissolution module to further dissolve in the conditioning liquid. Therefore, ozone water with a higher ozone concentration can be generated. Even if the dissolving part 130 is a plurality of dissolving modules connected in parallel. In this case, it is possible to increase the flow rate of ozone water generated by the dissolving module.

(3) The higher the temperature of the ozone water, the higher the reactivity of ozone and the deposits attached to the surface of the wafer W. In addition, the ozone dissolved in the ozone water becomes a gas and diffuses, resulting in the ozone concentration of the ozone water The tendency to decline. Therefore, even if the processing unit 16 further includes a heating source configured to heat the ozone water discharged from the nozzle N1 directly above the wafer W. In this case, since the temperature of the ozone water is relatively low before being discharged to the wafer W, it is possible to supply high-concentration ozone water to the wafer W. Furthermore, by heating the ozone water discharged from the nozzle N1 directly above the wafer W, the diffusion of ozone gas from the ozone water can be suppressed to a minimum, and the reactivity of ozone to the deposits of the wafer W can be improved . Therefore, the deposits adhering to the wafer W can be removed very effectively.

Even if the heating source is a heater that heats the wafer W from the back side, it may be a heating fluid supply mechanism that sprays high-temperature warm water or steam to the back of the wafer W. In these cases, the wafer W may be sucked and held by the rotation holding portion 16b even in the processing unit 16, and the periphery of the wafer W may be physically held (so-called mechanical clamps).

The heating source may be, for example, a heated body heated by electromagnetic induction. In this case, in the processing unit 16, the wafer W is supported by the heated body.

The heating source may be, for example, a heater configured to raise the temperature of ozone water before being supplied to the nozzle N1 at a high speed.

Even if the processing unit 16 is a batch-type chamber that simultaneously processes a plurality of wafers W in one processing tank. In this case, even if the heating source is a heater configured to raise the temperature of ozone water before being supplied to the treatment tank at a high speed.

(4) Even if the processing unit 16 further includes an irradiation section configured to irradiate energy rays of ultraviolet rays. Even if the control device 4 irradiates the wafer W with energy rays in the cleaning process of the wafer W by ozone water, it may control the irradiation unit. In this case, the deposits adhering to the surface of the wafer W can be removed more effectively.

(5) Even if the cleaning process of wafer W is temporarily not performed in all the processing units 16 (when a certain time or more has passed after the cleaning process is completed), the ozone water supply in the ozone water supply part 100 is stopped. Instead of draining ozone water to the outside of the system through the draining part 400, it can be generated.

[Illustration] Example 1. A substrate processing apparatus according to an example of the present disclosure includes an ozone gas supply unit configured to supply ozone gas, and an adjustment liquid supply unit configured to supply an adjustment liquid indicating a specific hydrogen ion concentration, and an ozone gas supply unit configured to supply ozone gas A dissolving part that dissolves in the conditioning solution to generate ozone water, and at least one processing chamber configured to clean the substrate with ozone water, and send the ozone water from the dissolving part to the at least one processing chamber through a liquid feeding pipe The liquid delivery part of the chamber. In this case, before ozone water is supplied to the processing chamber, ozone water is generated in the dissolving part. Therefore, before the ozone concentration of the ozone water is greatly attenuated, the ozone water is supplied to the processing chamber. Therefore, ozone water with a stable ozone concentration can be supplied to the substrate.

Example 2. Even if the device of Example 1 is connected to a liquid feeding pipe, it may be further equipped with a liquid discharge part configured to discharge ozone water to the outside of the system. In this case, the ozone water is continuously generated in the dissolving part, and the ozone water can be discharged from the drain part without performing the cleaning process of the substrate by the ozone water. Therefore, since the ozone water is difficult to stay in the liquid feeding pipe, the ozone concentration of the ozone water can be more stabilized.

Example 3. Even if the device of Example 1 or Example 2 is installed in the liquid feeding pipe, an ozone concentration monitor configured to obtain the ozone concentration of the ozone water on the downstream side of the dissolving part may be further provided.

Example 4. Even if the device of Example 3 is further equipped with a control unit that controls the processing of the adjustment liquid supply unit by adjusting the hydrogen ion concentration of the adjustment liquid generated in the adjustment liquid supply unit in response to the ozone concentration obtained by the ozone concentration monitor It is also possible. However, the higher the hydrogen ion concentration of the adjustment solution (the lower the pH), the easier it is for ozone gas to dissolve in the adjustment solution, and the lower the hydrogen ion concentration of the adjustment solution (the greater the pH), the more difficult it is for ozone gas to dissolve in the adjustment solution. . Therefore, it is possible to maintain the ozone concentration of the ozone water at an appropriate value by performing feedback control by adjusting the hydrogen ion concentration of the adjustment liquid in response to the ozone concentration obtained by the ozone concentration monitor.

Example 5. In the device of Example 3 or Example 4, even if the path length of the liquid feeding pipe from the dissolving part to the ozone concentration monitor is slightly less than the path length of the liquid feeding pipe from the dissolving part to at least one processing chamber It can be equal. The ozone concentration of ozone water begins to decay immediately after ozone water is produced in the dissolving part. Therefore, it is possible to indirectly obtain the ozone supplied to at least one processing chamber by installing an ozone concentration monitor at a position equal to the length of the path from the dissolving part to the at least one processing chamber. The concentration of ozone in water. Therefore, it is possible to more accurately perform the cleaning process of the substrate using ozone water.

Example 6. In any of the apparatuses of Examples 1 to 5, even if at least one processing chamber includes the first and second processing chambers configured to wash the substrates with ozone water, the liquid feeding pipe will dissolve from The section diverges and extends toward each of the first processing chamber and the second processing chamber, even if the path length from the dissolving section to the first processing chamber in the liquid feeding pipe is the same as that from the dissolving section to the liquid feeding pipe The path length to the second processing chamber may be slightly equal. In this case, the attenuation amount of the ozone concentration from the ozone water from the dissolving part to the first processing chamber is approximately the same as the attenuation amount of the ozone water from the dissolving part to the second processing chamber. Therefore, even if the substrate is cleaned in either of the first and second processing chambers, a uniform cleaning result can be obtained.

Example 7. In any of the apparatuses in Examples 1 to 6, even if the adjustment liquid supply part is configured to mix water and an acidic solution to generate an adjustment liquid.

Example 8. In the device of Example 7, even if the adjusting liquid supply part is configured to circulate the adjusting liquid. In this case, during the circulation of the adjustment liquid, the water and the acidic solution are sufficiently uniformly mixed. Therefore, it is possible to stably dissolve the ozone gas in the conditioning liquid in the dissolving part.

Example 9. Any of the apparatuses in Examples 1 to 8 may further include an alkaline solution supply unit configured to supply an alkaline solution to the liquid feeding pipe. In this case, the alkaline solution that reduces the solubility of the ozone gas direction adjustment liquid is mixed with the ozone water after the ozone water is produced. Therefore, it is possible to suppress the decrease of the ozone concentration of the ozone water, and also to remove the adhering matter adhering to the substrate by the alkali component.

Example 10. Even if any of the devices in Examples 1 to 9 are further equipped with a temperature monitor configured to obtain the temperature of the adjustment liquid or ozone water, and a hydrogen ion concentration monitor configured to obtain the hydrogen ion concentration of the adjustment liquid, and The ozone concentration monitor to obtain the ozone concentration of ozone water, and the temperature obtained by the temperature monitor is above a specified value, the hydrogen ion concentration obtained by the hydrogen ion concentration monitor is above the specified value, and the ozone obtained by the ozone concentration monitor When the concentration is greater than or equal to a specific value, a control unit that controls the liquid delivery unit to deliver ozone water from the dissolving unit to at least one processing chamber may also be performed. In this case, the ozone concentration of the ozone water supplied to at least one processing chamber is stably maintained above a specific value. Therefore, a uniform cleaning result can be obtained.

Example 11. Even if any of the devices in Examples 1 to 10 is further equipped with a control unit, at least one processing chamber includes a plurality of processing chambers configured to wash the substrate with ozone water, and the liquid feeding pipe is directed from the dissolving unit Each of the plural processing chambers is divided and extended. The liquid feeding part is configured to send ozone water to each of the plural processing chambers through the liquid feeding pipe from the dissolving part, and the control part is the ozone water is fed to the plural processing chambers In the case of one processing chamber among the chambers, the processing of controlling the liquid feeding part so that the ozone water is not sent to the remaining processing chambers among the plurality of processing chambers may be implemented. In this case, the cleaning process of the substrate based on ozone water is not performed simultaneously in each chamber. Therefore, ozone water with a stable ozone concentration is supplied to each chamber. Therefore, even if the substrate is cleaned in any processing chamber, a uniform cleaning result can be obtained.

Example 12. Even if any of the devices in Examples 1 to 11 are further equipped with a liquid discharge part that is installed in the liquid feeding pipe and is configured to discharge ozone water to the outside of the system, and ozone water is not sent to at least one processing chamber In the case of the room, a control unit that controls the treatment of the drainage unit by discharging ozone water to the outside of the system is also acceptable. In this case, since the ozone water is difficult to stay in the liquid feeding pipe, the ozone concentration of the ozone water can be more stabilized.

Example 13. A substrate processing method according to another example of the present disclosure includes the steps of supplying an adjustment liquid representing the concentration of ozone gas and a specific hydrogen ion to the dissolving part, and generating ozone water by dissolving ozone gas into the adjustment liquid, and generating ozone water from the dissolving part A step of feeding ozone water through a liquid feeding pipe to at least one processing chamber configured to perform cleaning processing on the substrate by the ozone water. In this case, the same effect as the device of Example 1 is obtained.

Example 14. Even if the method of Example 13 further includes the step of adjusting the hydrogen ion concentration of the adjustment liquid in accordance with the ozone concentration of the ozone water flowing in the liquid feeding pipe. In this case, the same effect as the device of Example 4 is obtained.

Example 15. In the method of Example 13 or Example 14, even if the step of feeding ozone water includes the adjustment liquid or the temperature of the ozone water is above a certain value, the hydrogen ion concentration of the adjustment liquid is above the certain value, and the ozone concentration of the ozone water When it is more than a specific value, ozone water may be sent from the dissolving part to at least one processing chamber. In this case, the same effect as the device of Example 10 is obtained.

Example 16. In any of the methods in Examples 13 to 15, even if at least one of the processing chambers includes a plurality of processing chambers configured to wash the substrate with ozone water, the step of sending ozone water is included in the ozone When the water is sent to one of the plurality of processing chambers, the ozone water may not be sent to the remaining processing chambers of the plurality of processing chambers. In this case, the same effect as the device of Example 11 is obtained.

Example 17. Even if any of the methods in Examples 13 to 16 further includes the case where the ozone water is not sent to at least one processing chamber, the ozone water may be discharged out of the system. In this case, the same effect as the device of Example 12 is obtained.

Example 18. A computer-readable recording medium related to other viewpoints of the present disclosure records a program for the substrate processing apparatus to perform any of the substrate processing methods in Examples 13 to 17. In this case, the same effect as any of the methods in Examples 13 to 17 was obtained. In this manual, even if the computer-readable recording medium includes a non-transitory computer recording medium (for example, various main memory devices or auxiliary memory devices), or a transitory computer recording medium ( For example, the data signal can be provided via the Internet).

1: Substrate processing system 3: Processing station 4: control device 10: Substrate processing equipment 16: processing unit 18: Control Department 100: Ozone water supply department 110: Ozone gas supply department 120: Adjusting fluid supply part 126: Hydrogen ion concentration monitor 130: Dissolving Department 140: Liquid delivery department 142: temperature monitor 143: Ozone concentration monitor 200: Alkaline solution supply unit 300: flushing fluid supply part 400: Drain 500: Exhaust D6~D9: Piping (supply pipe) RM: recording media

4: control device

10: Substrate processing equipment

16A~16C: Processing unit

16a: Processing chamber

16b: Rotation holding part

18: Control Department

19: Memory Department

100: Ozone water supply department

110: Ozone gas supply department

120: Adjusting fluid supply part

121: Liquid Source

122: Liquid Source

123: Circulation slot

124: Pump

125: heater

126: Hydrogen ion concentration monitor

130: Dissolving Department

140: Liquid delivery department

141: auxiliary heater

142: temperature monitor

143: Ozone concentration monitor

200: Alkaline solution supply unit

201: Liquid Source

202: Liquid Source

203: Circulation slot

204: Pump

205: heater

206: Hydrogen ion concentration monitor

300: flushing fluid supply part

301: Liquid Source

302: Pump

400: Drain

401: Drainage treatment unit

500: Exhaust

501: Drainage treatment unit

502: Pump

D1~D21: Piping

D7a: Adjustment Department

D8a: Adjustment Department

RM: recording media

N1: nozzle

N2: nozzle

V1~V 12: Valve

W: Wafer

Claims (14)

A substrate processing device, including: Ozone gas supply part, which is configured to supply ozone gas; The adjustment liquid supply part is configured to supply an adjustment liquid representing a specific hydrogen ion concentration; A dissolving part, which is configured to dissolve the ozone gas in the adjustment liquid to generate ozone water; At least one processing chamber, which is configured to clean the substrate with the above-mentioned ozone water; and The liquid feeding part is configured to send the ozone water from the dissolving part to the at least one processing chamber through a liquid feeding pipe. Such as the substrate processing device contained in claim 1, wherein It is further provided with a liquid discharge part connected to the liquid feeding pipe and configured to discharge the ozone water to the outside of the system. Such as the substrate processing apparatus contained in claim 1 or 2, wherein An ozone concentration monitor is further provided, which is installed in the liquid feeding pipe and configured to obtain the ozone concentration of the ozone water on the downstream side of the dissolving part. The substrate processing apparatus set out in claim 3, wherein The control unit further includes a control unit that controls the adjustment liquid supply unit by adjusting the hydrogen ion concentration of the adjustment liquid generated by the adjustment liquid supply unit in response to the ozone concentration obtained by the ozone concentration monitor. The substrate processing apparatus set out in claim 3, wherein The path length of the liquid feeding pipe from the dissolving part to the ozone concentration monitor is substantially equal to the path length of the liquid feeding pipe from the dissolving part to the at least one processing chamber. Such as the substrate processing apparatus contained in claim 1 or 2, wherein The at least one processing chamber includes first and second processing chambers configured to perform cleaning processing on the substrate by the ozone water, and The liquid feeding pipe is branched and extended from the dissolving part toward each of the first processing chamber and the second processing chamber, The length of the path from the dissolving part to the first processing chamber in the liquid feeding tube is substantially equal to the length of the path from the dissolving part to the second processing chamber in the liquid feeding tube. Such as the substrate processing apparatus contained in claim 1 or 2, wherein The adjustment liquid supply unit is configured to mix water and an acid solution to generate the adjustment liquid. Such as the substrate processing apparatus contained in claim 7, wherein The adjustment liquid supply unit is configured to circulate the adjustment liquid. Such as the substrate processing apparatus contained in claim 1 or 2, wherein It further includes an alkaline solution supply part configured to supply an alkaline solution to the liquid supply pipe. Such as the substrate processing apparatus contained in claim 1 or 2, wherein Further equipped with: A temperature monitor, which is configured to obtain the temperature of the above-mentioned adjustment liquid or the above-mentioned ozone water; A hydrogen ion concentration monitor, which is configured to obtain the hydrogen ion concentration of the above-mentioned adjustment liquid; An ozone concentration monitor, which is configured to obtain the ozone concentration of the above-mentioned ozone water; and The control unit, when the temperature obtained by the temperature monitor is above a specified value, the hydrogen ion concentration obtained by the hydrogen ion concentration is above the specified value, and the ozone concentration obtained by the ozone concentration monitor is above the specified value Execute the process of controlling the liquid feeding part in such a way that the ozone water is fed from the dissolving part to the at least one processing chamber. Such as the substrate processing apparatus contained in claim 1 or 2, wherein Further equipped with a control unit, The at least one processing chamber includes a plurality of processing chambers configured to perform a cleaning process on a substrate by the ozone water, The liquid feeding pipe is branched and extended from the dissolving part toward each of the plurality of processing chambers, The liquid feeding part is configured to send the ozone water from the dissolving part to each of the plurality of processing chambers through the liquid feeding pipe, The control unit is implemented to prevent the ozone water from being delivered to the remaining processing chambers among the plurality of processing chambers when the ozone water is delivered to one of the processing chambers. The method controls the processing of the above-mentioned liquid feeding unit. Such as the substrate processing apparatus contained in claim 1 or 2, wherein Further equipped with: The liquid discharge part, which is provided in the liquid feeding pipe, is configured to discharge the ozone water to the outside of the system; and The control unit executes the process of controlling the drainage unit to discharge the ozone water to the outside of the system when the ozone water is not sent to the at least one processing chamber. A substrate processing method, including: The step of dissolving the ozone gas in the adjusting liquid by supplying ozone gas and an adjusting liquid representing a specific hydrogen ion concentration to the dissolving part to generate ozone water; and The ozone water is fed from the dissolving part through a liquid feeding pipe to at least one processing chamber configured to perform a cleaning process on a substrate by the ozone water. A computer-readable recording medium is used to record a program for the substrate processing apparatus to execute the substrate processing method as set forth in claim 13.

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