WO2020129713A1 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
WO2020129713A1
WO2020129713A1 PCT/JP2019/047902 JP2019047902W WO2020129713A1 WO 2020129713 A1 WO2020129713 A1 WO 2020129713A1 JP 2019047902 W JP2019047902 W JP 2019047902W WO 2020129713 A1 WO2020129713 A1 WO 2020129713A1
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WO
WIPO (PCT)
Prior art keywords
pipe
substrate
phosphoric acid
inner tank
aqueous solution
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PCT/JP2019/047902
Other languages
French (fr)
Japanese (ja)
Inventor
真治 杉岡
岸田　拓也
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to KR1020237044355A priority Critical patent/KR20240005163A/en
Priority to KR1020217017081A priority patent/KR20210082531A/en
Priority to CN201980079317.XA priority patent/CN113169065A/en
Publication of WO2020129713A1 publication Critical patent/WO2020129713A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method.
  • the present invention relates to a technique of immersing a substrate in a treatment liquid stored in a bath and treating it.
  • Substrates to be processed include, for example, semiconductor substrates, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, It includes a photomask substrate, a ceramic substrate, a solar cell substrate, a printed circuit board, and the like.
  • a so-called wet etching may be performed in which a semiconductor wafer is immersed in a phosphoric acid aqueous solution stored in a processing tank and the silicon nitride film formed on the surface of the substrate is etched.
  • a substrate processing apparatus that performs such wet etching is described in Patent Document 1, for example.
  • the substrate processing apparatus of Patent Document 1 connects the inner tank in which the phosphoric acid aqueous solution in which the substrate is immersed is stored, the outer tank for collecting the phosphoric acid aqueous solution overflowing from the upper portion of the inner tank, and the outer tank and the inner tank. It is equipped with circulation piping. A circulation pump, a heater, and a filter are provided in the circulation pipe. The circulation pipe heats and filters the phosphoric acid aqueous solution pumped out from the outer tank and returns it to the inner tank. By providing the circulation pipe, the temperature of the phosphoric acid aqueous solution in the inner tank in which the substrate is immersed is maintained at a desired temperature, and the foreign matter deposited by etching is filtered.
  • the phosphoric acid aqueous solution may be returned to the inner tank, so that the phosphoric acid aqueous solution may flow unevenly in the inner tank.
  • the phosphoric acid concentration or the concentration of silicon eluted from the substrate may vary in the phosphoric acid aqueous solution. There was a risk of variations.
  • an object of the present invention is to provide a technique for reducing in-plane variation of substrate processing in a processing tank.
  • a first aspect is a substrate processing apparatus for processing a substrate, comprising a cylindrical inner tank with a bottom having a first opening in an upper portion, and an outer peripheral portion of the inner tank.
  • a bottomed cylindrical outer tub having a second opening, a first pipe connecting the inside of the inner tub and the inside of the outer tub, and the first tub provided from the outer tub to the inner tub
  • a pump for sending the processing liquid toward the heater, a heater provided in the first pipe for heating the processing liquid passing through the first pipe, and a pipe between the heater in the first pipe and the inner tank
  • a second pipe that connects the above-mentioned part and the outer tank, and a second pipe valve that is provided in the second pipe and that changes the flow rate of the processing liquid that passes through the second pipe.
  • the second mode is the substrate processing apparatus of the first mode, wherein one end of the first pipe is connected to the bottom of the inner tank.
  • a third aspect is the substrate processing apparatus of the first aspect or the second aspect, wherein the flow rate of the processing liquid that is provided between the heater and the inner tank in the first pipe and that passes through the first pipe. And a valve for changing the first pipe, wherein the valve for the first pipe is provided between a portion of the first pipe that is connected to the second pipe and the inner tank.
  • a fourth aspect is the substrate processing apparatus of the third aspect, wherein the control is connected to the first piping valve and the second piping valve and controls the first piping valve and the second piping valve. Further comprises a section.
  • a fifth aspect is the substrate processing apparatus of the fourth aspect, wherein the control unit opens the first piping valve and closes the second piping valve; The 1st piping valve and the 2nd circulation control process which opens the said 2nd piping valve are performed.
  • a sixth aspect is the substrate processing apparatus according to any one of the third to fifth aspects, wherein the first pipe is a branch portion between the heater and the first pipe valve in the first pipe.
  • a bypass pipe that branches from the bypass pipe and that is connected to the inner tank, and that is provided in the bypass pipe and that changes the flow rate of the processing liquid passing through the bypass pipe.
  • the bypass pipe is connected between the branch portion and the bypass pipe valve.
  • a seventh aspect is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the second pipe is connected to the inside of the outer tank through the second opening.
  • An eighth aspect is a substrate processing method for processing a substrate by the substrate processing apparatus according to any one of the first to seventh aspects, wherein a) the substrate is immersed in the processing liquid stored in the inner tank. B) in the step a), returning the processing liquid passing through the first pipe to the inner tank, and returning the processing liquid passing through the first pipe to the outer tank through the second pipe, c) In the step b), heating the treatment liquid passing through the first pipe is included.
  • the substrate processing apparatus of the first aspect it is possible to form a circulating flow in which the processing liquid overflowing from the inner tank and moved to the outer tank is returned to the inner tank by the first pipe. Further, by opening the valve for the second pipe, the treatment liquid can be moved from the first pipe to the second pipe and returned to the outer tank. As a result, the amount of the processing liquid returning to the inner tank can be reduced, so that the flow of the processing liquid in the inner tank can be reduced. Therefore, in-plane variation in substrate processing can be reduced.
  • the processing liquid can be returned to the bottom of the inner tank. Therefore, the flow of the processing liquid in the inner tank due to the circulation of the processing liquid can be reduced.
  • the flow of the processing liquid from the first pipe to the inner tank and the flow of the processing liquid from the first pipe to the second pipe can be controlled by the valve for the first pipe.
  • the operation of the first piping valve and the second piping valve can be controlled by the control unit.
  • the control unit executes the first circulation control processing, whereby the processing liquid can be moved from the outer tank to the inner tank through the first pipe.
  • the control unit executes the second circulation control process so that the processing liquid can be moved from the outer layer to the inner tank through the first pipe, and the first pipe and the second pipe branching from the first pipe and extended.
  • the treatment liquid can be transferred from the outer tank to the outer tank through the. Therefore, the amount of the processing liquid that moves from the outer layer to the inner tank can be reduced.
  • the substrate processing apparatus of the sixth aspect by closing the valve for the first piping and opening the valve for the second piping and the valve for the bypass piping, a part of the processing liquid returning to the inner tank is transferred to the second piping. It can be moved and led to the outer tank. As a result, the amount of processing liquid flowing into the inner tank can be reduced.
  • the processing liquid can be returned from the upper side of the outer tank by the second pipe.
  • the substrate processing method of the eighth aspect it is possible to form a circulation flow in which the processing liquid overflowing from the inner tank and moved to the outer tank is returned to the inner tank by the first pipe. Further, by opening the valve for the second pipe, the treatment liquid can be moved from the first pipe to the second pipe and returned to the outer tank. As a result, the amount of the processing liquid returned to the inner tank can be reduced, so that the flow of the processing liquid in the inner tank can be reduced. Therefore, in-plane variation in substrate processing can be reduced.
  • the expression indicating the shape not only represents the shape in a geometrically strict manner, but also within a range in which the same effect can be obtained, for example. A shape having irregularities or chamfers is also shown.
  • the expressions “comprising”, “comprising”, “comprising”, “including” or “having” one element are not exclusive expressions that exclude the presence of other elements. Unless stated otherwise, “above” includes the case where two elements are in contact with each other and the case where two elements are apart from each other.
  • FIG. 1 is a diagram showing a substrate liquid processing apparatus 100 (substrate processing apparatus) of the embodiment.
  • an XYZ orthogonal coordinate system is defined in order to explain the positional relationship of each element.
  • the X axis and the Y axis are parallel to the horizontal plane, and the Z axis is parallel to the vertical direction.
  • the direction in which the tip of the arrow faces is the + (plus) direction, and the opposite direction is the-(minus) direction.
  • the substrate liquid processing apparatus 100 includes a carrier loading/unloading unit 2, a lot forming unit 3, a lot placing unit 4, a lot transporting unit 5, a lot processing unit 6, and a control unit 7.
  • the carrier loading/unloading unit 2 houses a plurality of (for example, 25) substrates W which are silicon wafers vertically (Z-axis direction) in a horizontal orientation (an orientation in which both principal surfaces of the substrate W are parallel to the horizontal plane).
  • the carrier 9 is loaded and unloaded.
  • the carrier loading/unloading section 2 is provided with a carrier stage 10, a carrier transfer mechanism 11, carrier stocks 12 and 13, and a carrier mounting table 14.
  • a plurality of carriers 9 are placed on the carrier stage 10 along the Y-axis direction.
  • the carrier transport mechanism 11 transports the carrier 9.
  • the carrier stocks 12 and 13 temporarily accommodate one carrier 9.
  • the carrier 9 is placed on the carrier table 14.
  • the carrier stock 12 temporarily stores the substrate W to be a product before the lot processing unit 6 processes the substrate W.
  • the carrier stock 13 is temporarily stored after the substrate W to be a product is processed by the lot processing unit 6.
  • the carrier loading/unloading unit 2 transports the carrier 9 loaded into the carrier stage 10 from the outside to the carrier stock 12 or the carrier mounting table 14 by the carrier transport mechanism 11.
  • the carrier loading/unloading section 2 transports the carrier 9 placed on the carrier platform 14 to the carrier stock 13 or the carrier stage 10 by the carrier transport mechanism 11.
  • the carrier 9 carried to the carrier stage 10 is carried out to the outside.
  • the lot forming unit 3 combines a plurality of substrates W accommodated in one or a plurality of carriers 9 to form a lot made up of a number (for example, 50) of substrates W to be simultaneously processed.
  • the lot forming section 3 may make the surfaces of the substrates W on which the patterns are formed face each other. Further, the lot forming section 3 may make all the pattern formation surfaces of the substrates W face one side when forming a lot.
  • the lot forming section 3 is provided with a substrate transfer mechanism 15 that transfers a plurality of substrates W at the same time.
  • the substrate transfer mechanism 15 includes a mechanism for changing the attitude of the substrate W from a horizontal attitude to a vertical attitude (an attitude in which both main surfaces of the substrate W are parallel to the vertical plane) and a vertical attitude to a horizontal attitude while the substrate W is being transferred. ing.
  • the lot forming unit 3 conveys the substrate W from the carrier 9 placed on the carrier placing table 14 to the lot placing unit 4 by using the substrate conveying mechanism 15, and places the substrate W forming the lot on the lot placing unit 4. Place it.
  • the lot forming section 3 conveys the lot placed on the lot placing section 4 to the carrier 9 placed on the carrier placing table 14 by the substrate carrying mechanism 15.
  • the substrate transfer mechanism 15 serves as a substrate support part for supporting a plurality of substrates W, a first substrate support part for supporting the substrate W before processing (before being transferred by the lot transfer part 5), and a substrate supporting part after processing (before processing). It has a second substrate supporting portion that supports the substrate W after it has been transported by the lot transportation portion 5. By providing the first and second substrate support portions, it is possible to suppress particles and the like taken from the unprocessed substrate W from adhering to the processed substrate W.
  • the lot placing unit 4 includes a lot placing table 16 for temporarily placing a lot that the lot conveying unit 5 conveys between the lot forming unit 3 and the lot processing unit 6. Further, in the lot mounting unit 4, a loading-side lot mounting table 17 on which a lot before processing (before being transported by the lot transportation unit 5) is mounted, and after processing (after being transported by the lot transportation unit 5). An unloading side lot placing table 18 for placing the lots is provided. On each of the mounting tables 17 and 18, a plurality of substrates W for one lot are mounted vertically in a line in the Y-axis direction.
  • the lot placing section 4 the lot formed by the lot forming section 3 is placed on the loading side lot placing table 17, and the lot is brought into the lot processing section 6 by the lot carrying section 5.
  • the lot carried out from the lot processing section 6 by the lot carrying section 5 is placed on the unloading side lot placing table 18, and the lot is carried to the lot forming section 3.
  • the lot transfer unit 5 transfers a lot between the lot placement unit 4 and the lot processing unit 6 or inside the lot processing unit 6.
  • the lot transfer unit 5 is provided with a lot transfer mechanism 19 that transfers a lot.
  • the lot transfer mechanism 19 includes a rail 20 arranged along the lot placing section 4 and the lot processing section 6, a moving body 21 that moves along the rail 20 while holding a plurality of substrates W, and a moving body 21. Including a motor to move.
  • the moving body 21 is provided with a substrate holding body 22 that holds a plurality of substrates W arranged in a front-back direction in a vertical posture.
  • the moving body 21 has a mechanism including a motor for moving the substrate holder 22 forward and backward in the Y-axis direction.
  • the lot processing unit 6 performs processing such as etching, cleaning, and drying on a plurality of substrates W aligned in the Y-axis direction in a vertical posture as one lot.
  • a drying processing device 23 a substrate holder cleaning processing device 24, a cleaning processing device 25, and a plurality (two in this example) of etching processing devices 1 are arranged in this order in the +X direction. There is.
  • the drying processing apparatus 23 has a processing tank 27 and a substrate elevating mechanism 28 provided in the processing tank 27 so as to be vertically movable.
  • a processing gas for drying is supplied to the processing tank 27.
  • the substrate elevating mechanism 28 holds a plurality of substrates W for one lot side by side in a vertical posture.
  • the drying processing apparatus 23 receives the lot from the substrate holder 22 of the lot transfer mechanism 19 by the substrate elevating mechanism 28, and elevates and lowers the lot by the substrate elevating mechanism 28, thereby using the processing gas for drying supplied to the processing tank 27.
  • the substrate W is dried. Further, the drying processing device 23 transfers the lot from the substrate elevating mechanism 28 to the substrate holder 22 of the lot transfer mechanism 19.
  • the substrate holder cleaning processing apparatus 24 has a processing tank 29 and a supply mechanism for supplying the processing liquid for cleaning and the dry gas to the processing tank 29.
  • the substrate holder cleaning processing device 24 supplies the processing liquid for cleaning to the substrate holder 22 of the lot transfer mechanism 19, and then supplies the dry gas to perform the cleaning process of the substrate holder 22.
  • the cleaning processing device 25 performs a cleaning process on the substrate W.
  • the cleaning processing apparatus 25 includes a cleaning processing tank 30 and a rinse processing tank 31, and substrate lifting mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be vertically movable.
  • a cleaning treatment liquid SC-1 (ammonia hydrogen peroxide mixed solution) or the like
  • the rinse treatment bath 31 stores a rinse treatment liquid (pure water or the like).
  • Each etching processing apparatus 1 performs etching processing on the substrate W.
  • the etching processing apparatus 1 has a processing tank 34 for etching and a processing tank 35 for rinsing.
  • Substrate lifting mechanisms 36 and 37 are provided in the processing baths 34 and 35, respectively.
  • the processing bath 34 for etching can store therein a processing liquid for etching (phosphoric acid aqueous solution).
  • the rinse treatment tank 35 can store therein a rinse treatment liquid (pure water or the like).
  • the cleaning processing device 25 and the etching processing device 1 have, for example, the same configuration.
  • the substrate elevating mechanism 36 holds a plurality of substrates W for one lot side by side in a vertical posture.
  • the substrate lifting mechanism 36 receives a lot from the substrate holder 22 of the lot transfer mechanism 19.
  • the substrate elevating mechanism 36 lowers the lot, so that the lot is immersed in the processing liquid for etching in the processing bath 34.
  • the etching process of the substrate W is performed.
  • the substrate elevating mechanism 36 raises the lot and transfers the lot to the substrate holder 22.
  • the substrate elevating mechanism 37 receives the lot from the substrate holder 22.
  • the substrate elevating mechanism 37 lowers the lot so that the lot is immersed in the rinse treatment liquid in the treatment bath 35. As a result, the rinse process of the substrate W is performed. After the rinse process, the substrate elevating mechanism 37 raises the lot and transfers the lot to the substrate holder 22.
  • the controller 7 is connected to each part of the substrate liquid processing apparatus 100 (carrier loading/unloading section 2, lot forming section 3, lot placing section 4, lot transporting section 5, lot processing section 6, etching processing apparatus 1). , Control these actions.
  • the hardware configuration of the control unit 7 is the same as that of a general computer, for example. That is, the control unit 7 includes a CPU (processor), a ROM, a RAM (memory), and a fixed disk.
  • the CPU includes an arithmetic circuit that performs various arithmetic processes.
  • the ROM stores a basic program.
  • the RAM is a volatile main storage device that stores various kinds of information.
  • the fixed disk is an auxiliary storage device that stores programs or data that can be executed by the CPU.
  • the CPU, ROM, RAM, and fixed disk are connected by a bus line.
  • the control unit is connected to a display unit that displays images and an operation unit that includes a keyboard or mouse.
  • the display unit may be composed of a touch panel, and in this case, the display unit also functions as an operation unit.
  • the reading device and the communication unit may be connected to the bus line of the control unit.
  • the reading device reads information from a computer-readable non-transitory recording medium such as an optical disk, a magnetic disk, or a magneto-optical disk.
  • the communication unit enables information communication between the control unit 7 and another computer (server or the like).
  • the program is provided to the control unit 7 by reading the recording medium on which the program is recorded with a reading device.
  • the program may be provided to the control unit 7 via the communication unit.
  • FIG. 2 is a diagram schematically showing the configuration of the etching processing apparatus 1.
  • the etching processing apparatus 1 has the above-mentioned processing tank 34 that stores a phosphoric acid aqueous solution having a predetermined concentration as a processing liquid.
  • the processing tank 34 has an inner tank 341 and an outer tank 343.
  • the inner tank 341 is formed in a bottomed tubular shape having a first opening 341P formed by an upper edge.
  • the outer tank 343 is provided on the outer peripheral portion of the inner tank 341 and is formed in a bottomed tubular shape having a second opening 343P formed by an upper edge.
  • the outer tank 343 is formed in a loop shape that surrounds the entire outer peripheral portion of the inner tank 341.
  • the excess phosphoric acid aqueous solution overflows from the first opening 341P. Then, the overflowed phosphoric acid aqueous solution flows into the outer tank 343 through the second opening 343P.
  • one end of the first pipe 50 is connected inside the outer tank 343, one end of the first pipe 50 is connected.
  • one end of the first pipe 50 extends downward from above the outer tank 343 through the second opening 343P and extends inside the outer tank 343. That is, the opening at one end of the first pipe 50 is provided below the second opening 343P.
  • the other end of the first pipe 50 is connected to the inside of the inner tank 341.
  • the other end of the first pipe 50 is connected to the bottom portion 341B of the inner tank 341 (the bottom surface of the inner tank 341 in the depth direction).
  • the first pipe 50 is provided with a concentration detector 501, a pump 51, an opening/closing valve 511, a heater 52, a filter 53, and an opening/closing valve 513 in order from the upstream side (outer tank 343 side).
  • the concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution passing through the first pipe 50.
  • the concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution, for example, by measuring the absorbance of light having a specific wavelength in the phosphoric acid aqueous solution.
  • the concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution discharged from the outer tank 343.
  • the concentration detector 501 is connected to the control unit 7 and transmits a detection signal according to the detected phosphoric acid concentration to the control unit 7.
  • the pump 51 discharges the phosphoric acid aqueous solution from the inside of the outer tank 343 through the first pipe 50 and sends the phosphoric acid aqueous solution into the inner tank 341.
  • the heater 52 heats the phosphoric acid aqueous solution passing through the first pipe 50.
  • the filter 53 filters the phosphoric acid aqueous solution passing through the first pipe 50.
  • the open/close valves 511 and 513 are, for example, electric or electromagnetic valves, and control the on/off of the flow of the processing liquid in the first pipe 50. "Controlling the flow on and off” means controlling the flow of the processing liquid in the pipe between two states, a flowable state and a non-flowable state.
  • the opening/closing valves 511 and 513 are connected to the control unit 7, and the opening/closing operation is controlled by the control unit 7.
  • the substrate elevating mechanism 36 includes a holder (not shown) that holds a plurality of substrates W in a posture in which the substrates W are vertically erected and arranged horizontally at intervals.
  • the substrate elevating mechanism 36 also includes an elevating motor (not shown) that elevates the substrate W between the upper position Pos1 and the lower position Pos2 while holding each substrate W by the holder.
  • the first pipe 50 has a bypass pipe 55.
  • one end of the bypass pipe 55 is connected to a branch portion 531 of the pipe portion between the filter 53 and the opening/closing valve 513 (first pipe valve) in the first pipe 50.
  • the other end of the bypass pipe 55 is connected to a connection portion 533 between the opening/closing valve 513 and the inner tank 341 in the first pipe 50. That is, the bypass pipe 55 branches from the branch portion 531 between the heater 52 and the opening/closing valve 513 in the first pipe 50 and is connected to the inner tank 341.
  • the other end of the bypass pipe 55 may be directly connected to the inner tank 341 (for example, the bottom portion 341B).
  • the bypass pipe 55 of the first pipe 50 is provided with an opening/closing valve 57, a flow rate control valve 58, and a flow rate detector 59 in order from the upstream side (branch portion 531 side).
  • the open/close valve 57 and the flow rate control valve 58 are connected to the control unit 7 and operate according to a control signal from the control unit 7.
  • the open/close valve 57 controls on/off of the flow of the phosphoric acid aqueous solution flowing through the bypass pipe 55, and the flow rate control valve 58 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55.
  • Adjusting the flow rate means changing the flow rate at least in the state where the processing liquid is allowed to flow.
  • the flow rate control valve 58 for example, an electric needle valve may be adopted.
  • the flow rate detector 59 detects the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55.
  • the flow rate detector 59 is connected to the control unit 7 and sends a detection signal according to the detected flow rate to the control unit 7.
  • an ultrasonic flow meter that detects the flow rate in the pipe by using ultrasonic waves from the outside of the pipe may be adopted.
  • the etching processing apparatus 1 includes a second pipe 60.
  • the second pipe 60 constitutes a pipe path that connects the first pipe 50 and the outer tank 343.
  • one end of the second pipe 60 is connected to the middle of the bypass pipe 55 that is a part of the first pipe 50. More specifically, one end of the second pipe 60 is connected to a pipe portion between the opening/closing valve 57 and the branch portion 531 in the bypass pipe 55 of the first pipe 50 via a connection portion 601.
  • the other end of the second pipe 60 is connected to the inside of the outer tank 343.
  • the other end of the second pipe 60 extends downward from above the outer tank 343 through the second opening 343P to extend inside the outer tank 343.
  • An opening/closing valve 61 is provided in the middle of the route of the second pipe 60.
  • the open/close valve 61 is connected to the control unit 7, and controls on/off of the flow of the phosphoric acid aqueous solution in the second pipe 60 according to a control signal from the control unit 7.
  • control unit 7 performs the first circulation control process of opening the open/close valves 511 and 513 and closing the open/close valves 57 and 61.
  • this first circulation control process an equal amount of phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.
  • the control unit 7 performs the second circulation control process of opening the open/close valves 511, 57, 61 and closing the open/close valve 513.
  • the second circulation control process part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55 of the first pipe 50, and the rest is passed through the second pipe 60. And returned to the outer tank 343. More specifically, the phosphoric acid treatment liquid discharged from the outer tank 343 through the first pipe 50 is guided to the bypass pipe 55 through the branch portion 531 because the opening/closing valve 513 is closed.
  • the remaining phosphoric acid aqueous solution is guided to the inner tank 341 via the bypass pipe 55 and the connecting portion 533.
  • the opening/closing valve 513 functions as a first piping valve that changes the flow rate of the processing liquid passing through the first piping 50.
  • the open/close valve 61 also functions as a second pipe valve that changes the flow rate of the processing liquid passing through the second pipe 60.
  • the opening/closing valve 57 or the flow rate control valve 58 functions as a bypass piping valve that changes the flow rate of the processing liquid flowing through the bypass piping 55. Note that “changing the flow rate” is a concept including not only the case where the opening and closing valve controls the flow of the liquid on and off, but also the case where the flow rate adjusting valve adjusts the flow rate.
  • the control unit 7 When the control unit 7 performs the second circulation control process, by controlling the flow rate control valve 58 according to the detection result of the flow rate detector 59, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 is adjusted. You can That is, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be increased by increasing the opening of the flow rate control valve 58, and the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be increased by decreasing the opening of the flow rate control valve 58. Can be reduced.
  • the flow control valve 58 may control the flow of the phosphoric acid aqueous solution in the bypass pipe 55 on and off. In this case, the open/close valve 57 may be omitted. Further, it is not essential to provide the flow rate control valve 58. When the flow rate control valve 58 is omitted, the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55 is not adjusted, and the circulation of the phosphoric acid aqueous solution is controlled by the opening/closing valve 57. Further, the provision of the bypass pipe 55 is not essential and may be omitted.
  • one end (the connection portion 601) of the second pipe 60 is directly connected to, for example, the heater 52 and the inner tank 341 in the first pipe 50 (for example, the position of the branch portion 531). May be.
  • the opening/closing valve 61 is opened, so that a part of the phosphoric acid aqueous solution in the first pipe 50 flows into the second pipe 60 and the outer tank Sent to 343. Thereby, the amount of the phosphoric acid aqueous solution returned to the inner tank 341 through the first pipe 50 can be reduced.
  • the etching processing apparatus 1 includes a phosphoric acid aqueous solution supply unit 40.
  • the phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution having a predetermined concentration to the outer tank 343.
  • the phosphoric acid aqueous solution supply unit 40 may supply the phosphoric acid aqueous solution to the inner tank 341 or a predetermined portion of the first pipe 50.
  • the phosphoric acid aqueous solution supply unit 40 includes a supply source including a tank that stores the phosphoric acid aqueous solution, and a supply pipe 401 that connects the supply source and the outer tank 343.
  • the supply pipe 401 is provided with a flow rate detector 403, a flow rate control valve 405, and an opening/closing valve 407 in order from the upstream side (supply source side).
  • the flow rate detector 403 detects the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401.
  • the flow rate control valve 405 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401.
  • the open/close valve 417 controls on/off of the flow of the phosphoric acid aqueous solution in the supply pipe 401.
  • the flow rate detector 403, the flow rate control valve 405, and the open/close valve 407 are connected to the control unit 7.
  • the control unit 7 controls the flow rate control valve 405 based on the signal indicating the flow rate transmitted from the flow rate detector 403.
  • the phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution to the outer tank 343 at a controlled flow rate.
  • the substrate liquid processing apparatus 100 includes a pure water supply unit 41.
  • the pure water supply unit 41 supplies pure water to the outer tank 343.
  • the pure water supply unit 41 may supply pure water to the inner tank 341 or a predetermined portion of the first pipe 50. Pure water is supplied in order to supplement the water vaporized by heating the phosphoric acid aqueous solution, for example.
  • the pure water supply unit 41 includes a supply source that supplies pure water at a predetermined temperature, and a supply pipe 411 that connects the supply source and the outer tank 343.
  • the supply pipe 411 is provided with a flow rate detector 413, a flow rate control valve 415, and an opening/closing valve 417 in order from the upstream side (supply source side).
  • the flow rate detector 413 detects the flow rate of pure water flowing through the supply pipe 411.
  • the flow rate control valve 415 adjusts the flow rate of pure water flowing through the supply pipe 411.
  • the open/close valve 417 controls on/off of the flow of pure water in the supply pipe 411.
  • the flow rate detector 413, the flow rate control valve 415, and the open/close valve 417 are connected to the control unit 7.
  • the control unit 7 controls the flow rate control valve 415 based on the signal indicating the flow rate transmitted from the flow rate detector 413.
  • the pure water supply unit 41 supplies pure water to the outer tank 343 at a controlled flow rate.
  • the etching processing apparatus 1 includes a silicon supply unit 42.
  • the silicon supply unit 42 supplies a silicon aqueous solution (for example, hexafluorosilicic acid aqueous solution (H 2 SiF 6 +H 2 O)) to the outer tank 343.
  • the silicon supply unit 42 may supply the silicon aqueous solution to the inner tank 341 or a predetermined portion of the first pipe 50.
  • the silicon supply unit 42 includes a supply source that supplies the silicon aqueous solution, and a supply pipe 421 that connects the supply source and the outer tank 343.
  • the supply pipe 421 is provided with a flow rate detector 423, a flow rate control valve 425, and an opening/closing valve 427 in order from the upstream side (supply side).
  • the flow rate detector 423 detects the flow rate of the aqueous silicon solution flowing through the supply pipe 421.
  • the flow rate control valve 425 adjusts the flow rate of the silicon aqueous solution flowing through the supply pipe 421.
  • the opening/closing valve 427 controls on/off of the flow of the silicon aqueous solution in the supply pipe 421.
  • the flow rate detector 423, the flow rate control valve 425, and the open/close valve 427 are connected to the control unit 7.
  • the control unit 7 controls the flow rate control valve 425 based on the signal indicating the flow rate transmitted from the flow rate detector 423.
  • the silicon supply unit 42 supplies silicon to the outer tank 343 at a controlled flow rate.
  • a waste pipe 90 is connected to a pipe portion that connects the heater 52 and the filter 53 in the first pipe 50.
  • the waste pipe 90 is a pipe path used when discarding the phosphoric acid aqueous solution in the processing tank 34 to the outside of the substrate liquid processing apparatus 100.
  • the waste pipe 90 is provided with a concentration detector 901, a waste valve 91, a cooling tank 93, and a waste valve 95 in order from the upstream side (first pipe 50 side).
  • the concentration detector 901 detects the silicon concentration in the phosphoric acid aqueous solution passing through the waste pipe 90.
  • the concentration detector 901 detects the silicon concentration, for example, by measuring the absorbance of light of a specific wavelength in phosphoric acid aqueous solution.
  • the concentration detector 901 is connected to the control unit 7 and transmits a detection signal according to the detected silicon concentration to the control unit 7.
  • the cooling tank 93 temporarily stores the relatively high-temperature phosphoric acid aqueous solution discharged from the processing tank 34 and cools it to a temperature at which it can be discarded to the outside.
  • the waste valve 91 provided on the upstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution is flowed into the cooling tank 93 from the first pipe 50.
  • the discard valve 95 provided on the downstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution is discharged from the cooling tank 93.
  • the discard valves 91 and 95 are connected to the control unit 7 and are opened/closed by the control unit 7.
  • the phosphoric acid aqueous solution passing through the first pipe 50 is sent to the waste pipe 90 at an appropriate timing.
  • the concentration detector 901 detects the silicon concentration in the phosphoric acid aqueous solution.
  • the pure water from the pure water supply unit 41 or the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply unit 40 is appropriately supplied, so that the silicon concentration in the circulating phosphoric acid aqueous solution is increased. Is reduced.
  • a circulating flow of the phosphoric acid aqueous solution is formed in the processing bath 34 and the first pipe 50.
  • the phosphoric acid aqueous solution is stored in the processing tank 34.
  • the phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution to the outer tank 343 of the liquid processing unit 39, and the pump 51 of the first pipe 50 directs the phosphoric acid aqueous solution from the outer tank 343 toward the inner tank 341.
  • the phosphoric acid solution overflowing from the first opening 341P of the inner tank 341 starts to move to the outer tank 343.
  • the phosphoric acid aqueous solution in the outer tank 343 starts to be discharged through the first pipe 50. In this way, a circulating flow in which the phosphoric acid aqueous solution circulates is formed in the circulation system of the processing tank 34 and the first pipe 50.
  • the heater 52 causes phosphorus to flow through the first pipe 50 so that the phosphoric acid aqueous solution in the inner tank 341 reaches a predetermined temperature (for example, 80° C.).
  • the aqueous acid solution is heated.
  • the control unit 7 supplies pure water from the pure water supply unit 41.
  • the pure water supply for adjusting the phosphoric acid concentration may be performed at any timing when the substrate W is immersed in the phosphoric acid aqueous solution (that is, during the liquid processing of the substrate W). It may be performed when it is not immersed in the treatment liquid.
  • FIG. 3 is a timing chart for explaining the operation status of each element during etching processing in the etching processing apparatus 1.
  • the horizontal axis represents time, and the operations of the substrate elevating mechanism 36, the opening/closing valve 513, the opening/closing valve 57, and the opening/closing valve 61 are shown in this order from the top in the vertical direction.
  • the substrate elevating/lowering mechanism 36 it is located between “upper”, which is in an upper position Pos1 above the processing bath 34, and “lower”, which is in a lower position Pos2 inside the processing bath 34. Shows the state change (see FIG. 2).
  • the lot is etched by the substrate elevating mechanism 36 moving to the lower position Pos2 while holding the lot (substrate W).
  • the open/close valves 513, 57, 61 show a state change between “open” indicating an open state and “closed” indicating a closed state. Further, the “amount returned to the inner tank” shown in FIG. 3 indicates the amount of the phosphoric acid water amount liquid flowing into the inner tank 341 through the first pipe 50 by the operation of the pump 51.
  • FIG. 3 shows a timing chart of one cycle in which one lot containing a plurality of substrates W is etched in the processing bath 34 of the etching processing apparatus 1.
  • This etching process includes a carry-in step S11, a dipping step S12, and a carry-out step S13.
  • the carry-in step S11 includes a process in which the substrate elevating mechanism 36 located at the upper position Pos1 receives the lot from the lot transfer mechanism 19.
  • the dipping step S12 includes a process of dipping the lot in the phosphoric acid aqueous solution stored in the inner tank 341 by lowering the substrate elevating mechanism 36 from the upper position Pos1 to the lower position Pos2. By performing this immersion step S12, the substrate W is etched.
  • the substrate elevating mechanism 36 moves from the lower position Pos2 to the upper position Pos1 to lift the lot from the phosphoric acid aqueous solution stored in the inner tank 341, and the lot transfer mechanism 19 moves the substrate to the upper position Pos1.
  • the process of receiving the lot from the elevating mechanism 36 is included.
  • the lot transferred to the lot transfer mechanism 19 is treated with the rinse liquid in the treatment tank 35.
  • one cycle of the etching process in the processing tank 34 includes a normal circulation period T1, a bypass circulation period T2, and a normal circulation period T3 in order.
  • the normal circulation periods T1 and T3 are periods in which the pump 51 operates to circulate the phosphoric acid aqueous solution in an amount equal to that of the phosphoric acid aqueous solution discharged from the outer tank 343 to the inner tank 341 through the first pipe 50. ..
  • the circulation performed in the normal circulation periods T1 and T3 may be referred to as “normal circulation”.
  • bypass circulation period T2 part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55 by the operation of the pump 51, and the rest is transferred to the outer tank 343 through the second pipe 60. This is the period during which the returned circulation is performed.
  • the circulation performed in the bypass circulation period T2 may be referred to as “bypass circulation”.
  • the control unit 7 performs the above-described first circulation control process. That is, in the normal circulation periods T1 and T3, the opening/closing valves 511 and 513 of the first pipe 50 are opened, and the opening/closing valve 57 of the bypass pipe 55 of the first pipe 50 and the opening/closing valve 61 of the second pipe 60 are closed. It In this normal circulation, the phosphoric acid aqueous solution discharged from the outer tank 343 through the first pipe 50 is guided as it is to the inner tank 341 through the first pipe 50. Therefore, in the normal circulation periods T1 and T3, all of the phosphoric acid aqueous solution from the outer tank 343 is returned to the inner tank 341. That is, the same amount of phosphoric acid aqueous solution as the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.
  • the control unit 7 performs the above-mentioned second circulation control process. That is, the opening/closing valve 513 of the first pipe 50 is closed, and the opening/closing valve 57 of the bypass pipe 55 and the opening/closing valve 61 of the second pipe 60 are opened.
  • the phosphoric acid aqueous solution discharged from the outer tank 343 through the first pipe 50 moves to the bypass pipe 55 side in the branching section 531.
  • the connection portion 601 a part of the phosphoric acid aqueous solution passes through the second pipe 60 and is guided to the outer tank 343, and the rest passes through the bypass pipe 55 and the connection portion 533 and the first pipe 50.
  • the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. Therefore, it is possible to suppress a decrease in the temperature of the phosphoric acid aqueous solution in the inner tank 341.
  • the total amount of the phosphoric acid aqueous solution discharged from the outer tank 343 by the operation of the pump 51 is V.
  • the flow rate of the phosphoric acid aqueous solution to the inner tank 341 is a flow rate V1 in the normal circulation periods T1 and T3 that is substantially equal to the total amount V, but is a flow rate V2 smaller than the flow rate V1 in the bypass circulation period T2.
  • the second pipe 60 can pass through during the bypass circulation period T2, so that a part of the phosphoric acid aqueous solution is guided to the outer tank 343 through the second pipe 60. That is, the amount of the phosphoric acid aqueous solution introduced to the outer tank 343 is represented by V-V2.
  • the flow rate detector 59 detects the flow rate introduced to the inner tank 341 through the bypass pipe 55.
  • the flow rate detected by the flow rate detector 59 is equal to the flow rate to the inner tank 341. Therefore, in the bypass circulation period T2, the control unit 7 controls the flow rate control valve 58 so that the detection signal of the flow rate detector 59 approaches the predetermined flow rate V2. This makes it possible to properly adjust the flow rate to the inner tank 341 during the bypass circulation period T2.
  • the control unit 7 may accept a change in the magnitude of V2 via the operation unit.
  • the carrying-in step S11 before the immersion step S12 is included in the normal circulation period T1. Therefore, normal circulation is performed in the carry-in step S11.
  • the entire amount of the phosphoric acid aqueous solution heated by the heater 52 is supplied into the inner tank 341, so that the temperature of the phosphoric acid aqueous solution in the inner tank 341 quickly reaches the desired temperature. Can be made.
  • the phosphoric acid concentration and the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 can be quickly adjusted.
  • bypass circulation period T2 a part of the period in which the immersion step S12 is performed is the bypass circulation period T2. Specifically, bypass circulation is temporarily performed during the immersion step S12. By performing the bypass circulation, the generation of the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced more than in the normal circulation. That is, since the variation in the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced, the in-plane variation in the etching amount on the substrate W can be reduced.
  • the initial period of the immersion step S12 is included in the normal circulation period T1. That is, in the dipping step S12, normal circulation is first performed for a fixed time. Immediately after the immersion step S12 is started, the lot is immersed in the phosphoric acid treatment liquid in the inner tank 341, so that the temperature of the phosphoric acid aqueous solution is relatively likely to decrease. Therefore, the normal circulation is performed immediately after the start of the immersion step S12, whereby all of the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. This can reduce the temperature drop of the phosphoric acid aqueous solution in the inner tank 341.
  • the latter half of the immersion step S12 is included in the normal circulation period T3. That is, in the latter stage of the immersion step S12, the bypass circulation is switched to the normal circulation, and the carry-out step S13 is performed.
  • the immersion step S12 silicon is eluted from each substrate W into the phosphoric acid aqueous solution, so that the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 tends to be high. Therefore, it is desirable to quickly move the phosphoric acid aqueous solution in the inner tank 341 to the outer tank 343 by performing normal circulation before the immersion step S12 is completed.
  • the pure water or the phosphoric acid aqueous solution is supplied from the pure water supply unit 41 or the phosphoric acid aqueous solution supply unit 43 to appropriately supply the silicon in the circulating phosphoric acid aqueous solution.
  • the concentration is reduced. Therefore, by normal circulation, the silicon concentration in the phosphoric acid aqueous solution inside the inner tank 341 can be promptly optimized.
  • normal circulation is also performed in the carry-out step S13 after the immersion step S12.
  • the processing solutions are supplied from the supply sections 41 to 43 during or after the immersion step S12 until the next etching processing cycle is started.
  • the phosphoric acid concentration and silicon concentration of can be promptly optimized.
  • the temperature of the phosphoric acid aqueous solution in the inner tank 341 may decrease.
  • the carry-out step S13 after the immersion step S12 the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly raised by the normal circulation.
  • bypass circulation is set to be performed only in a part of the immersion step S12. However, bypass circulation may be performed in all of the immersion step S12. In addition, bypass circulation may be performed in part or all of the carry-in step S11 or the carry-out step S13.
  • the control unit 7 may accept a change as to whether or not to perform bypass circulation for each cycle of the etching process via the operation unit. Further, in each cycle, setting or changing of the timing of executing bypass circulation may be accepted via the operation unit. Further, the control unit 7 may automatically execute the bypass circulation depending on whether or not the predetermined requirement is satisfied. In this case, the control unit 7 may include a determination unit that determines whether or not a predetermined requirement is satisfied based on a threshold value. Further, as the predetermined requirements, for example, the etching amount of the substrate W, the temperature of the circulating phosphoric acid aqueous solution, the phosphoric acid concentration or the silicon concentration, and the like may be set.
  • the on-off valves and the flow control valves provided in the etching processing apparatus 1 have been described as being controlled by the control unit 7, but may be manually operated by an operator. Then, the operator may manually operate to switch between the normal circulation and the bypass circulation.

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Abstract

The present invention is provided with: an inner tank (341); an outer tank (343) which is provided on the outer periphery of the inner tank (341); a first pipe (50) which connects the inner tank (341) and the outer tank (343) to each other; a heater (52) which heats an aqueous phosphoric acid solution that passes through the first pipe (50); an opening/closing valve (513) which is provided in the first pipe (50) at a position between the heater (52)and the inner tank (341); a second pipe (60) which connects the outer tank (343) and a piping part of the first pipe (50), said piping part being positioned between the heater (52) and the inner tank (341); and an opening/closing valve (61) which is provided in the second pipe (60).

Description

基板処理装置および基板処理方法Substrate processing apparatus and substrate processing method
　この発明は、基板処理装置および基板処理方法に関する。特に、槽に貯留された処理液に基板を浸漬させて処理する技術に関する。処理対象となる基板には、例えば、半導体基板、液晶表示装置および有機ＥＬ（Electroluminescence）表示装置などのＦＰＤ（Flat Panel Display）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板、太陽電池用基板、プリント基板などが含まれる。 The present invention relates to a substrate processing apparatus and a substrate processing method. In particular, the present invention relates to a technique of immersing a substrate in a treatment liquid stored in a bath and treating it. Substrates to be processed include, for example, semiconductor substrates, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, It includes a photomask substrate, a ceramic substrate, a solar cell substrate, a printed circuit board, and the like.
　半導体装置の製造工程には、処理槽に貯留されたリン酸水溶液に半導体ウエハを浸漬し、基板の表面に形成されたシリコン窒化膜をエッチングする、いわゆるウエットエッチングが行われる場合がある。このようなウエットエッチングを行う基板処理装置は、例えば特許文献１に記載されている。 In the process of manufacturing a semiconductor device, a so-called wet etching may be performed in which a semiconductor wafer is immersed in a phosphoric acid aqueous solution stored in a processing tank and the silicon nitride film formed on the surface of the substrate is etched. A substrate processing apparatus that performs such wet etching is described in Patent Document 1, for example.
　特許文献１の基板処理装置は、基板が浸漬されるリン酸水溶液を貯留した内槽と、内槽の上部からオーバーフローしたリン酸水溶液を回収する外槽と、外槽と内槽とを接続する循環配管とを備えている。循環配管には、循環ポンプ、ヒーター、およびフィルターが設けられている。循環配管は、外槽から汲み出されたリン酸水溶液を加熱および濾過して内槽に戻す。循環配管が設けられていることによって、基板が浸漬される内槽のリン酸水溶液の温度が所望の温度に保たれるとともに、エッチングによって析出した異物が濾過される。 The substrate processing apparatus of Patent Document 1 connects the inner tank in which the phosphoric acid aqueous solution in which the substrate is immersed is stored, the outer tank for collecting the phosphoric acid aqueous solution overflowing from the upper portion of the inner tank, and the outer tank and the inner tank. It is equipped with circulation piping. A circulation pump, a heater, and a filter are provided in the circulation pipe. The circulation pipe heats and filters the phosphoric acid aqueous solution pumped out from the outer tank and returns it to the inner tank. By providing the circulation pipe, the temperature of the phosphoric acid aqueous solution in the inner tank in which the substrate is immersed is maintained at a desired temperature, and the foreign matter deposited by etching is filtered.
特開２０１３－０２１０６６号公報JP, 2013-021066, A
　しかしながら、従来技術の場合、リン酸水溶液が内槽に戻されることによって、内槽においてリン酸水溶液の流動が不均一に発生する可能性があった。このように、内槽において不均一な流動が発生すると、リン酸水溶液中において、リン酸濃度または基板から溶出したシリコンの濃度にばらつきが生じるおそれがあり、これによって、基板のエッチング量が面内でばらつくおそれがあった。 However, in the case of the conventional technique, the phosphoric acid aqueous solution may be returned to the inner tank, so that the phosphoric acid aqueous solution may flow unevenly in the inner tank. As described above, when uneven flow occurs in the inner tank, the phosphoric acid concentration or the concentration of silicon eluted from the substrate may vary in the phosphoric acid aqueous solution. There was a risk of variations.
　そこで、本発明は、処理槽内における基板処理の面内ばらつきを低減する技術を提供することを目的とする。 Therefore, an object of the present invention is to provide a technique for reducing in-plane variation of substrate processing in a processing tank.
　上記課題を解決するため、第１態様は、基板を処理する基板処理装置であって、上部に第１開口を有する有底筒状の内槽と、前記内槽の外周部に設けられ、上部に第２開口を有する有底筒状の外槽と、前記内槽の内部と前記外槽の内部とを接続する第１配管と、前記第１配管に設けられ、前記外槽から前記内槽へ向けて処理液を送るポンプと、前記第１配管に設けられ、前記第１配管を通過する前記処理液を加熱するヒーターと、前記第１配管における前記ヒーターと前記内槽との間の配管部と前記外槽とを接続する第２配管と、前記第２配管に設けられ、前記第２配管を通過する前記処理液の流量を変更する第２配管用バルブとを備える。 In order to solve the above problems, a first aspect is a substrate processing apparatus for processing a substrate, comprising a cylindrical inner tank with a bottom having a first opening in an upper portion, and an outer peripheral portion of the inner tank. A bottomed cylindrical outer tub having a second opening, a first pipe connecting the inside of the inner tub and the inside of the outer tub, and the first tub provided from the outer tub to the inner tub A pump for sending the processing liquid toward the heater, a heater provided in the first pipe for heating the processing liquid passing through the first pipe, and a pipe between the heater in the first pipe and the inner tank A second pipe that connects the above-mentioned part and the outer tank, and a second pipe valve that is provided in the second pipe and that changes the flow rate of the processing liquid that passes through the second pipe.
　第２態様は、第１態様の基板処理装置であって、前記第１配管の一端が前記内槽の底部に接続されている。 The second mode is the substrate processing apparatus of the first mode, wherein one end of the first pipe is connected to the bottom of the inner tank.
　第３態様は、第１態様または第２態様の基板処理装置であって、前記第１配管における前記ヒーターと前記内槽との間に設けられ、前記第１配管を通過する前記処理液の流量を変更する第１配管用バルブ、をさらに備え、前記第１配管用バルブが、前記第１配管における前記第２配管につながる部分と前記内槽との間に設けられている。 A third aspect is the substrate processing apparatus of the first aspect or the second aspect, wherein the flow rate of the processing liquid that is provided between the heater and the inner tank in the first pipe and that passes through the first pipe. And a valve for changing the first pipe, wherein the valve for the first pipe is provided between a portion of the first pipe that is connected to the second pipe and the inner tank.
　第４態様は、第３態様の基板処理装置であって、前記第１配管用バルブおよび前記第２配管用バルブに接続され、前記第１配管用バルブおよび前記第２配管用バルブを制御する制御部をさらに備える。 A fourth aspect is the substrate processing apparatus of the third aspect, wherein the control is connected to the first piping valve and the second piping valve and controls the first piping valve and the second piping valve. Further comprises a section.
　第５態様は、第４態様の基板処理装置であって、前記制御部は、前記第１配管用バルブを開放し、かつ前記第２配管用バルブを閉鎖する第１循環制御処理と、前記第１配管用バルブ、および前記第２配管用バルブを開放する第２循環制御処理とを実行する。 A fifth aspect is the substrate processing apparatus of the fourth aspect, wherein the control unit opens the first piping valve and closes the second piping valve; The 1st piping valve and the 2nd circulation control process which opens the said 2nd piping valve are performed.
　第６態様は、第３態様から第５態様のいずれか１つの基板処理装置であって、前記第１配管は、前記第１配管における前記ヒーターと前記第１配管用バルブとの間の分岐部から分岐して前記内槽につながるバイパス配管、を含み、前記バイパス配管に設けられ、前記バイパス配管を通過する前記処理液の流量を変更するバイパス配管用バルブ、をさらに備え、前記第２配管が、前記バイパス配管における前記分岐部と前記バイパス配管用バルブとの間に接続されている。 A sixth aspect is the substrate processing apparatus according to any one of the third to fifth aspects, wherein the first pipe is a branch portion between the heater and the first pipe valve in the first pipe. A bypass pipe that branches from the bypass pipe and that is connected to the inner tank, and that is provided in the bypass pipe and that changes the flow rate of the processing liquid passing through the bypass pipe. The bypass pipe is connected between the branch portion and the bypass pipe valve.
　第７態様は、第１態様から第６態様のいずれか１つの基板処理装置であって、前記第２配管が前記第２開口を通って前記外槽の内部に接続されている。 A seventh aspect is the substrate processing apparatus according to any one of the first to sixth aspects, wherein the second pipe is connected to the inside of the outer tank through the second opening.
　第８態様は、第１態様から第７態様のいずれか１つの基板処理装置で基板を処理する基板処理方法であって、ａ）基板を前記内槽に貯留された前記処理液に浸漬すること、ｂ）前記工程ａ）において、前記第１配管を通過する前記処理液を前記内槽に戻すとともに、前記第１配管を通過する前記処理液を前記第２配管を通じて前記外槽に戻すこと、ｃ）前記工程ｂ）において、前記第１配管を通過する前記処理液を加熱することを含む。 An eighth aspect is a substrate processing method for processing a substrate by the substrate processing apparatus according to any one of the first to seventh aspects, wherein a) the substrate is immersed in the processing liquid stored in the inner tank. B) in the step a), returning the processing liquid passing through the first pipe to the inner tank, and returning the processing liquid passing through the first pipe to the outer tank through the second pipe, c) In the step b), heating the treatment liquid passing through the first pipe is included.
　第１態様の基板処理装置によると、内槽からあふれて外槽に移動した処理液を第１配管によって内槽に戻す循環流を形成できる。また、第２配管用バルブを開放することによって、第１配管から第２配管へ処理液を移動させて、外槽に戻すことができる。これにより、内槽に戻る処理液の量を減らすことができるため、内槽における処理液の流動を低減できる。したがって、基板処理における面内ばらつきを低減できる。 According to the substrate processing apparatus of the first aspect, it is possible to form a circulating flow in which the processing liquid overflowing from the inner tank and moved to the outer tank is returned to the inner tank by the first pipe. Further, by opening the valve for the second pipe, the treatment liquid can be moved from the first pipe to the second pipe and returned to the outer tank. As a result, the amount of the processing liquid returning to the inner tank can be reduced, so that the flow of the processing liquid in the inner tank can be reduced. Therefore, in-plane variation in substrate processing can be reduced.
　第２態様の基板処理装置によると、内槽の底部に処理液を戻すことができる。これにより、処理液循環による内槽における処理液の流動を低減できる。 According to the substrate processing apparatus of the second aspect, the processing liquid can be returned to the bottom of the inner tank. Thereby, the flow of the processing liquid in the inner tank due to the circulation of the processing liquid can be reduced.
　第３態様の基板処理装置によると、第１配管用バルブによって、第１配管から内槽への処理液の流通、および第１配管から第２配管への処理液の流通を制御できる。 According to the substrate processing apparatus of the third aspect, the flow of the processing liquid from the first pipe to the inner tank and the flow of the processing liquid from the first pipe to the second pipe can be controlled by the valve for the first pipe.
　第４態様の基板処理装置によると、第１配管用バルブおよび第２配管用バルブの動作を制御部によって制御できる。 According to the substrate processing apparatus of the fourth aspect, the operation of the first piping valve and the second piping valve can be controlled by the control unit.
　第５態様の基板処理装置によると、制御部が第１循環制御処理を実行することにより、第１配管を通じて外槽から内槽へ処理液を移動させることができる。また、制御部が第２循環制御処理を実行することにより、第１配管を通じて外層から内槽へ処理液を移動させることができるとともに、第１配管および第１配管から分岐して延びる第２配管を通じて外槽から外槽へ処理液を移動させることができる。このため、外層から内槽へ移動する処理液の量を小さくすることができる。 According to the substrate processing apparatus of the fifth aspect, the control unit executes the first circulation control processing, whereby the processing liquid can be moved from the outer tank to the inner tank through the first pipe. In addition, the control unit executes the second circulation control process so that the processing liquid can be moved from the outer layer to the inner tank through the first pipe, and the first pipe and the second pipe branching from the first pipe and extended. The treatment liquid can be transferred from the outer tank to the outer tank through the. Therefore, the amount of the processing liquid that moves from the outer layer to the inner tank can be reduced.
　第６態様の基板処理装置によると、第１配管用バルブを閉鎖し、第２配管用バルブおよびバイパス配管用バルブを開放することによって、内槽へ戻る処理液の一部を、第２配管へ移動させて、外槽に導くことができる。これにより、内槽に流入する処理液の量を低減できる。 According to the substrate processing apparatus of the sixth aspect, by closing the valve for the first piping and opening the valve for the second piping and the valve for the bypass piping, a part of the processing liquid returning to the inner tank is transferred to the second piping. It can be moved and led to the outer tank. As a result, the amount of processing liquid flowing into the inner tank can be reduced.
　第７態様の基板処理装置によると、第２配管により、外槽の上側から処理液を戻すことができる。 According to the substrate processing apparatus of the seventh aspect, the processing liquid can be returned from the upper side of the outer tank by the second pipe.
　第８態様の基板処理方法によると、内槽からあふれて外槽に移動した処理液を第１配管によって内槽に戻す循環流を形成できる。また、第２配管用バルブを開放することによって、第１配管から第２配管へ処理液を移動させて、外槽に戻すことができる。これにより、内槽に戻される処理液の量を減らすことができるため、内槽における処理液の流動を低減できる。したがって、基板処理における面内ばらつきを低減できる。 According to the substrate processing method of the eighth aspect, it is possible to form a circulation flow in which the processing liquid overflowing from the inner tank and moved to the outer tank is returned to the inner tank by the first pipe. Further, by opening the valve for the second pipe, the treatment liquid can be moved from the first pipe to the second pipe and returned to the outer tank. As a result, the amount of the processing liquid returned to the inner tank can be reduced, so that the flow of the processing liquid in the inner tank can be reduced. Therefore, in-plane variation in substrate processing can be reduced.
実施形態の基板液処理装置１００を示す図である。It is a figure which shows the substrate liquid processing apparatus 100 of embodiment. エッチング処理装置１の構成を模式的に示す図である。It is a figure which shows the structure of the etching processing apparatus 1 typically. エッチング処理装置１におけるエッチング処理時の各要素の動作状況を説明するためのタイミングチャートである。5 is a timing chart for explaining an operating state of each element during etching processing in the etching processing apparatus 1.
　以下、添付の図面を参照しながら、本発明の実施形態について説明する。なお、この実施形態に記載されている構成要素はあくまでも例示であり、本発明の範囲をそれらのみに限定する趣旨のものではない。図面においては、理解容易のため、必要に応じて各部の寸法や数が誇張または簡略化して図示されている場合がある。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Note that the constituent elements described in this embodiment are merely examples, and the scope of the present invention is not intended to be limited thereto. In the drawings, for ease of understanding, the dimensions and number of each part may be exaggerated or simplified as necessary.
　本願において、相対的または絶対的な位置関係を示す表現（例えば「一方向に」「一方向に沿って」「平行」「直交」「中心」「同心」「同軸」など）は、特に断らない限り、その位置関係を厳密に表すのみならず、公差もしくは同程度の機能が得られる範囲で相対的に角度または距離に関して変位された状態も表すものとする。等しい状態であることを示す表現（例えば「同一」「等しい」「均質」など）は、特に断らない限り、定量的に厳密に等しい状態を表すのみならず、公差もしくは同程度の機能が得られる差が存在する状態も表すものとする。形状を示す表現（例えば、「四角形状」または「円筒形状」など）は、特に断らない限り、幾何学的に厳密にその形状を表すのみならず、同程度の効果が得られる範囲で、例えば凹凸や面取りなどを有する形状も表すものとする。一の構成要素を「備える」「具える」「具備する」「含む」または「有する」という表現は、他の構成要素の存在を除外する排他的表現ではない。「～の上」とは、特に断らない限り、２つの要素が接している場合のほか、２つの要素が離れている場合も含む。 In the present application, expressions indicating relative or absolute positional relationship (for example, “in one direction”, “along one direction”, “parallel”, “orthogonal”, “center”, “concentric”, “coaxial”, etc.) are not particularly specified. As long as the positional relationship is not strictly represented, it also represents a state of being relatively displaced with respect to an angle or a distance within a range where a tolerance or a similar function is obtained. Unless otherwise specified, expressions that indicate equal states (for example, “identical”, “equal”, “homogeneous”, etc.) not only represent quantitatively exactly equal states, but also have tolerances or similar functions. The state in which there is a difference shall also be represented. Unless otherwise specified, the expression indicating the shape (for example, “square shape” or “cylindrical shape”) not only represents the shape in a geometrically strict manner, but also within a range in which the same effect can be obtained, for example. A shape having irregularities or chamfers is also shown. The expressions “comprising”, “comprising”, “comprising”, “including” or “having” one element are not exclusive expressions that exclude the presence of other elements. Unless stated otherwise, "above" includes the case where two elements are in contact with each other and the case where two elements are apart from each other.
　＜実施形態＞
　図１は、実施形態の基板液処理装置１００（基板処理装置）を示す図である。図１では、各要素の位置関係を説明するために、ＸＹＺ直交座標系を定義している。Ｘ軸およびＹ軸は水平面に平行であり、Ｚ軸は鉛直方向に平行である。また、図１において、矢印の先端が向く方を＋（プラス）方向とし、その逆方向を－（マイナス）方向とする。 <Embodiment>
FIG. 1 is a diagram showing a substrate liquid processing apparatus 100 (substrate processing apparatus) of the embodiment. In FIG. 1, an XYZ orthogonal coordinate system is defined in order to explain the positional relationship of each element. The X axis and the Y axis are parallel to the horizontal plane, and the Z axis is parallel to the vertical direction. Further, in FIG. 1, the direction in which the tip of the arrow faces is the + (plus) direction, and the opposite direction is the-(minus) direction.
　基板液処理装置１００は、キャリア搬入出部２と、ロット形成部３と、ロット載置部４と、ロット搬送部５と、ロット処理部６と、制御部７とを備えている。キャリア搬入出部２は、複数枚（例えば２５枚）のシリコンウエハである基板Ｗを水平姿勢（基板Ｗの両主面が水平面に平行となる姿勢）で上下（Ｚ軸方向）に並べて収容したキャリア９の搬入および搬出を行う。 The substrate liquid processing apparatus 100 includes a carrier loading/unloading unit 2, a lot forming unit 3, a lot placing unit 4, a lot transporting unit 5, a lot processing unit 6, and a control unit 7. The carrier loading/unloading unit 2 houses a plurality of (for example, 25) substrates W which are silicon wafers vertically (Z-axis direction) in a horizontal orientation (an orientation in which both principal surfaces of the substrate W are parallel to the horizontal plane). The carrier 9 is loaded and unloaded.
　キャリア搬入出部２には、キャリアステージ１０、キャリア搬送機構１１、キャリアストック１２，１３、およびキャリア載置台１４が設けられている。キャリアステージ１０には、Ｙ軸方向に沿って複数のキャリア９が載置される。キャリア搬送機構１１は、キャリア９の搬送を行う。キャリアストック１２，１３は、１つのキャリア９を一時的に収容する。キャリア載置台１４には、キャリア９が載置される。キャリアストック１２は、製品となる基板Ｗをロット処理部６で処理する前に一時的に収容する。キャリアストック１３は、製品となる基板Ｗをロット処理部６で処理した後に一時的に保管する。 The carrier loading/unloading section 2 is provided with a carrier stage 10, a carrier transfer mechanism 11, carrier stocks 12 and 13, and a carrier mounting table 14. A plurality of carriers 9 are placed on the carrier stage 10 along the Y-axis direction. The carrier transport mechanism 11 transports the carrier 9. The carrier stocks 12 and 13 temporarily accommodate one carrier 9. The carrier 9 is placed on the carrier table 14. The carrier stock 12 temporarily stores the substrate W to be a product before the lot processing unit 6 processes the substrate W. The carrier stock 13 is temporarily stored after the substrate W to be a product is processed by the lot processing unit 6.
　キャリア搬入出部２は、外部からキャリアステージ１０に搬入されたキャリア９を、キャリア搬送機構１１でキャリアストック１２またはキャリア載置台１４に搬送する。キャリア搬入出部２は、キャリア載置台１４に載置されたキャリア９を、キャリア搬送機構１１でキャリアストック１３やキャリアステージ１０に搬送する。キャリアステージ１０に搬送されたキャリア９は、外部へ搬出される。 The carrier loading/unloading unit 2 transports the carrier 9 loaded into the carrier stage 10 from the outside to the carrier stock 12 or the carrier mounting table 14 by the carrier transport mechanism 11. The carrier loading/unloading section 2 transports the carrier 9 placed on the carrier platform 14 to the carrier stock 13 or the carrier stage 10 by the carrier transport mechanism 11. The carrier 9 carried to the carrier stage 10 is carried out to the outside.
　ロット形成部３は、１つまたは複数のキャリア９に収容された複数の基板Ｗを組合せて同時に処理される枚数（たとえば、５０枚）の基板Ｗからなるロットを形成する。ロット形成部３は、ロットを形成する際に、各基板Ｗの表面にパターンが形成されている面どうしを互いに対向させてもよい。また、ロット形成部３は、ロットを形成する際に、各基板Ｗのパターン形成面がすべて一方を向くようにしてもよい。 The lot forming unit 3 combines a plurality of substrates W accommodated in one or a plurality of carriers 9 to form a lot made up of a number (for example, 50) of substrates W to be simultaneously processed. When forming the lot, the lot forming section 3 may make the surfaces of the substrates W on which the patterns are formed face each other. Further, the lot forming section 3 may make all the pattern formation surfaces of the substrates W face one side when forming a lot.
　ロット形成部３には、同時に複数枚の基板Ｗを搬送する基板搬送機構１５が設けられている。基板搬送機構１５は、基板Ｗの搬送途中で基板Ｗの姿勢を水平姿勢から垂直姿勢（基板Ｗの両主面が鉛直面に平行となる姿勢）および垂直姿勢から水平姿勢に変更する機構を備えている。 The lot forming section 3 is provided with a substrate transfer mechanism 15 that transfers a plurality of substrates W at the same time. The substrate transfer mechanism 15 includes a mechanism for changing the attitude of the substrate W from a horizontal attitude to a vertical attitude (an attitude in which both main surfaces of the substrate W are parallel to the vertical plane) and a vertical attitude to a horizontal attitude while the substrate W is being transferred. ing.
　ロット形成部３は、キャリア載置台１４に載置されたキャリア９から基板搬送機構１５を用いて基板Ｗをロット載置部４に搬送し、ロットを形成する基板Ｗをロット載置部４に載置する。ロット形成部３は、ロット載置部４に載置されたロットを基板搬送機構１５でキャリア載置台１４に載置されたキャリア９へ搬送する。基板搬送機構１５は、複数枚の基板Ｗを支持するための基板支持部として、処理前（ロット搬送部５で搬送される前）の基板Ｗを支持する第１基板支持部、および処理後（ロット搬送部５で搬送された後）の基板Ｗを支持する第２基板支持部を有している。第１および第２基板支持部を備えることによって、処理前の基板Ｗから取れたパーティクルなどが処理後の基板Ｗに付着することを抑制できる。 The lot forming unit 3 conveys the substrate W from the carrier 9 placed on the carrier placing table 14 to the lot placing unit 4 by using the substrate conveying mechanism 15, and places the substrate W forming the lot on the lot placing unit 4. Place it. The lot forming section 3 conveys the lot placed on the lot placing section 4 to the carrier 9 placed on the carrier placing table 14 by the substrate carrying mechanism 15. The substrate transfer mechanism 15 serves as a substrate support part for supporting a plurality of substrates W, a first substrate support part for supporting the substrate W before processing (before being transferred by the lot transfer part 5), and a substrate supporting part after processing (before processing). It has a second substrate supporting portion that supports the substrate W after it has been transported by the lot transportation portion 5. By providing the first and second substrate support portions, it is possible to suppress particles and the like taken from the unprocessed substrate W from adhering to the processed substrate W.
　ロット載置部４は、ロット搬送部５がロット形成部３とロット処理部６との間で搬送するロットを一時的に載置するためのロット載置台１６を備えている。また、ロット載置部４には、処理前（ロット搬送部５で搬送される前）のロットを載置する搬入側ロット載置台１７、および処理後（ロット搬送部５で搬送された後）のロットを載置する搬出側ロット載置台１８が設けられている。載置台１７，１８の各々には、１ロット分の複数枚の基板Ｗが垂直姿勢でＹ軸方向に並べて載置される。 The lot placing unit 4 includes a lot placing table 16 for temporarily placing a lot that the lot conveying unit 5 conveys between the lot forming unit 3 and the lot processing unit 6. Further, in the lot mounting unit 4, a loading-side lot mounting table 17 on which a lot before processing (before being transported by the lot transportation unit 5) is mounted, and after processing (after being transported by the lot transportation unit 5). An unloading side lot placing table 18 for placing the lots is provided. On each of the mounting tables 17 and 18, a plurality of substrates W for one lot are mounted vertically in a line in the Y-axis direction.
　ロット載置部４では、ロット形成部３で形成されたロットが搬入側ロット載置台１７に載置され、そのロットがロット搬送部５によってロット処理部６に搬入される。ロット載置部４では、ロット処理部６からロット搬送部５によって搬出されたロットが搬出側ロット載置台１８に載置され、そのロットがロット形成部３に搬送される。 In the lot placing section 4, the lot formed by the lot forming section 3 is placed on the loading side lot placing table 17, and the lot is brought into the lot processing section 6 by the lot carrying section 5. In the lot placing section 4, the lot carried out from the lot processing section 6 by the lot carrying section 5 is placed on the unloading side lot placing table 18, and the lot is carried to the lot forming section 3.
　ロット搬送部５は、ロット載置部４およびロット処理部６の間で、あるいはロット処理部６の内部でロットの搬送を行う。ロット搬送部５には、ロットの搬送を行うロット搬送機構１９が設けられている。ロット搬送機構１９は、ロット載置部４とロット処理部６に沿わせて配置したレール２０、複数枚の基板Ｗを保持しながらレール２０に沿って移動する移動体２１、および移動体２１を移動させるモータを含む。移動体２１には、垂直姿勢で前後に並んだ複数枚の基板Ｗを保持する基板保持体２２が設けられている。移動体２１は、基板保持体２２をＹ軸方向に進退させるモータなどを含む機構を有する。 The lot transfer unit 5 transfers a lot between the lot placement unit 4 and the lot processing unit 6 or inside the lot processing unit 6. The lot transfer unit 5 is provided with a lot transfer mechanism 19 that transfers a lot. The lot transfer mechanism 19 includes a rail 20 arranged along the lot placing section 4 and the lot processing section 6, a moving body 21 that moves along the rail 20 while holding a plurality of substrates W, and a moving body 21. Including a motor to move. The moving body 21 is provided with a substrate holding body 22 that holds a plurality of substrates W arranged in a front-back direction in a vertical posture. The moving body 21 has a mechanism including a motor for moving the substrate holder 22 forward and backward in the Y-axis direction.
　ロット処理部６は、垂直姿勢でＹ軸方向に並ぶ複数枚の基板Ｗを１ロットとしてエッチング、洗浄および乾燥などの処理を行う。ロット処理部６には、＋Ｘ方向に向かって順に、乾燥処理装置２３、基板保持体洗浄処理装置２４、洗浄処理装置２５、および複数（本例では２つ）のエッチング処理装置１が配置されている。 The lot processing unit 6 performs processing such as etching, cleaning, and drying on a plurality of substrates W aligned in the Y-axis direction in a vertical posture as one lot. In the lot processing section 6, a drying processing device 23, a substrate holder cleaning processing device 24, a cleaning processing device 25, and a plurality (two in this example) of etching processing devices 1 are arranged in this order in the +X direction. There is.
　乾燥処理装置２３は、処理槽２７と、処理槽２７に昇降自在に設けられた基板昇降機構２８とを有する。処理槽２７には、乾燥用の処理ガス（イソプロピルアルコール（ＩＰＡ）など）が供給される。基板昇降機構２８には、１ロット分の複数枚の基板Ｗが垂直姿勢で前後に並べて保持される。乾燥処理装置２３は、ロット搬送機構１９の基板保持体２２からロットを基板昇降機構２８で受取り、基板昇降機構２８でそのロットを昇降させることで、処理槽２７に供給した乾燥用の処理ガスで基板Ｗの乾燥処理を行う。また、乾燥処理装置２３は、基板昇降機構２８からロット搬送機構１９の基板保持体２２にロットを受け渡す。 The drying processing apparatus 23 has a processing tank 27 and a substrate elevating mechanism 28 provided in the processing tank 27 so as to be vertically movable. A processing gas for drying (isopropyl alcohol (IPA) or the like) is supplied to the processing tank 27. The substrate elevating mechanism 28 holds a plurality of substrates W for one lot side by side in a vertical posture. The drying processing apparatus 23 receives the lot from the substrate holder 22 of the lot transfer mechanism 19 by the substrate elevating mechanism 28, and elevates and lowers the lot by the substrate elevating mechanism 28, thereby using the processing gas for drying supplied to the processing tank 27. The substrate W is dried. Further, the drying processing device 23 transfers the lot from the substrate elevating mechanism 28 to the substrate holder 22 of the lot transfer mechanism 19.
　基板保持体洗浄処理装置２４は、処理槽２９、および当該処理槽２９に洗浄用の処理液および乾燥ガスを供給する供給機構を有する。基板保持体洗浄処理装置２４は、ロット搬送機構１９の基板保持体２２に洗浄用の処理液を供給した後、乾燥ガスを供給することで基板保持体２２の洗浄処理を行う。 The substrate holder cleaning processing apparatus 24 has a processing tank 29 and a supply mechanism for supplying the processing liquid for cleaning and the dry gas to the processing tank 29. The substrate holder cleaning processing device 24 supplies the processing liquid for cleaning to the substrate holder 22 of the lot transfer mechanism 19, and then supplies the dry gas to perform the cleaning process of the substrate holder 22.
　洗浄処理装置２５は、基板Ｗの洗浄処理を行う。洗浄処理装置２５は、洗浄用の処理槽３０とリンス用の処理槽３１とを有し、各処理槽３０，３１に基板昇降機構３２，３３を昇降自在に設けている。洗浄用の処理槽３０には、洗浄用の処理液（ＳＣ－１（アンモニア過酸化水素水混合液）など）が貯留される。リンス用の処理槽３１には、リンス用の処理液（純水など）が貯留される。 The cleaning processing device 25 performs a cleaning process on the substrate W. The cleaning processing apparatus 25 includes a cleaning processing tank 30 and a rinse processing tank 31, and substrate lifting mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be vertically movable. In the cleaning treatment tank 30, a cleaning treatment liquid (SC-1 (ammonia hydrogen peroxide mixed solution) or the like) is stored. The rinse treatment bath 31 stores a rinse treatment liquid (pure water or the like).
　各エッチング処理装置１は、基板Ｗのエッチング処理を行う。エッチング処理装置１は、エッチング用の処理槽３４とリンス用の処理槽３５とを有する。各処理槽３４，３５には、基板昇降機構３６，３７が設けられている。エッチング用の処理槽３４は、エッチング用の処理液（リン酸水溶液）を内部に貯留できる。リンス用の処理槽３５は、リンス用の処理液（純水など）を内部に貯留できる。 Each etching processing apparatus 1 performs etching processing on the substrate W. The etching processing apparatus 1 has a processing tank 34 for etching and a processing tank 35 for rinsing. Substrate lifting mechanisms 36 and 37 are provided in the processing baths 34 and 35, respectively. The processing bath 34 for etching can store therein a processing liquid for etching (phosphoric acid aqueous solution). The rinse treatment tank 35 can store therein a rinse treatment liquid (pure water or the like).
　洗浄処理装置２５とエッチング処理装置１は、例えば同一の構成を有する。エッチング処理装置１について説明すると、基板昇降機構３６は、１つのロット分の複数枚の基板Ｗを垂直姿勢で前後に並べて保持する。エッチング処理装置１では、基板昇降機構３６がロット搬送機構１９の基板保持体２２からロットを受け取る。そして、基板昇降機構３６がそのロットを下降させることによって、ロットを処理槽３４のエッチング用の処理液に浸漬させる。これにより、基板Ｗのエッチング処理が行われる。エッチング処理の後、基板昇降機構３６がロットを上昇させるとともに、そのロットを基板保持体２２に渡す。その後、基板昇降機構３７が、基板保持体２２からロットを受け取る。そして、基板昇降機構３７がそのロットを下降させることによって、そのロットを処理槽３５のリンス用の処理液に浸漬させる。これにより、基板Ｗのリンス処理が行われる。リンス処理の後、基板昇降機構３７はロットを上昇させるとともに、そのロットを基板保持体２２に渡す。 The cleaning processing device 25 and the etching processing device 1 have, for example, the same configuration. Explaining the etching processing apparatus 1, the substrate elevating mechanism 36 holds a plurality of substrates W for one lot side by side in a vertical posture. In the etching processing apparatus 1, the substrate lifting mechanism 36 receives a lot from the substrate holder 22 of the lot transfer mechanism 19. Then, the substrate elevating mechanism 36 lowers the lot, so that the lot is immersed in the processing liquid for etching in the processing bath 34. Thereby, the etching process of the substrate W is performed. After the etching process, the substrate elevating mechanism 36 raises the lot and transfers the lot to the substrate holder 22. After that, the substrate elevating mechanism 37 receives the lot from the substrate holder 22. Then, the substrate elevating mechanism 37 lowers the lot so that the lot is immersed in the rinse treatment liquid in the treatment bath 35. As a result, the rinse process of the substrate W is performed. After the rinse process, the substrate elevating mechanism 37 raises the lot and transfers the lot to the substrate holder 22.
　制御部７は、基板液処理装置１００の各部（キャリア搬入出部２、ロット形成部３、ロット載置部４、ロット搬送部５、ロット処理部６、エッチング処理装置１）に接続されており、これらの動作を制御する。制御部７のハードウェア構成は、例えば一般的なコンピュータと同一である。すなわち、制御部７は、ＣＰＵ（プロセッサー）、ＲＯＭ、ＲＡＭ（メモリー）、および固定ディスクを備えている。ＣＰＵは、各種演算処理を行う演算回路を含む。ＲＯＭは、基本プログラムを記憶している。ＲＡＭは、各種情報を記憶する揮発性の主記憶装置である。固定ディスクは、ＣＰＵが実行することが可能なプログラムまたはデータなどを記憶する補助記憶装置である。ＣＰＵ、ＲＯＭ、ＲＡＭ、および固定ディスクは、バスラインで接続されている。 The controller 7 is connected to each part of the substrate liquid processing apparatus 100 (carrier loading/unloading section 2, lot forming section 3, lot placing section 4, lot transporting section 5, lot processing section 6, etching processing apparatus 1). , Control these actions. The hardware configuration of the control unit 7 is the same as that of a general computer, for example. That is, the control unit 7 includes a CPU (processor), a ROM, a RAM (memory), and a fixed disk. The CPU includes an arithmetic circuit that performs various arithmetic processes. The ROM stores a basic program. The RAM is a volatile main storage device that stores various kinds of information. The fixed disk is an auxiliary storage device that stores programs or data that can be executed by the CPU. The CPU, ROM, RAM, and fixed disk are connected by a bus line.
　制御部には、画像を表示する表示部、およびキーボードまたはマウスなどを含む操作部が接続される。表示部は、タッチパネルで構成されていてもよく、この場合、表示部は操作部としても機能する。制御部のバスラインには、読取装置および通信部が接続されてもよい。読取装置は、光ディスク、磁気ディスク、光磁気ディスクなどのコンピュータ読み取り可能な非一過性の記録媒体から情報の読み取りを行う。通信部は、制御部７と他のコンピュータ（サーバーなど）との間で情報通信を可能にする。プログラムが記録された記録媒体を読取装置で読み取ることにより、当該プログラムが制御部７に提供される。なお、プログラムは、通信部を介して制御部７に提供されてもよい。 -The control unit is connected to a display unit that displays images and an operation unit that includes a keyboard or mouse. The display unit may be composed of a touch panel, and in this case, the display unit also functions as an operation unit. The reading device and the communication unit may be connected to the bus line of the control unit. The reading device reads information from a computer-readable non-transitory recording medium such as an optical disk, a magnetic disk, or a magneto-optical disk. The communication unit enables information communication between the control unit 7 and another computer (server or the like). The program is provided to the control unit 7 by reading the recording medium on which the program is recorded with a reading device. The program may be provided to the control unit 7 via the communication unit.
　図２は、エッチング処理装置１の構成を模式的に示す図である。エッチング処理装置１は、処理液として所定濃度のリン酸水溶液を貯留する前述した処理槽３４を有している。処理槽３４は、内槽３４１および外槽３４３を有している。内槽３４１は、上部の縁で構成される第１開口３４１Ｐを有する有底筒状に形成されている。外槽３４３は、内槽３４１の外周部に設けられ、上部の縁で構成される第２開口３４３Ｐを有する有底筒状に形成されている。また、外槽３４３は、内槽３４１の外周部全体を取り囲むループ状に形成されている。内槽３４１がリン酸水溶液で満タンになると、余剰のリン酸水溶液が第１開口３４１Ｐからあふれる。そして、あふれたリン酸水溶液が、第２開口３４３Ｐを通じて外槽３４３の内部に流入する。 FIG. 2 is a diagram schematically showing the configuration of the etching processing apparatus 1. The etching processing apparatus 1 has the above-mentioned processing tank 34 that stores a phosphoric acid aqueous solution having a predetermined concentration as a processing liquid. The processing tank 34 has an inner tank 341 and an outer tank 343. The inner tank 341 is formed in a bottomed tubular shape having a first opening 341P formed by an upper edge. The outer tank 343 is provided on the outer peripheral portion of the inner tank 341 and is formed in a bottomed tubular shape having a second opening 343P formed by an upper edge. The outer tank 343 is formed in a loop shape that surrounds the entire outer peripheral portion of the inner tank 341. When the inner tank 341 is filled with the phosphoric acid aqueous solution, the excess phosphoric acid aqueous solution overflows from the first opening 341P. Then, the overflowed phosphoric acid aqueous solution flows into the outer tank 343 through the second opening 343P.
　外槽３４３の内部には、第１配管５０の一端が接続されている。本例では、第１配管５０の一端は、外槽３４３の上方から、第２開口３４３Ｐを通って下方に延びて、外槽３４３の内部に延在している。すなわち、第１配管５０の一端の開口は、第２開口３４３Ｐよりも下方に設けられている。第１配管５０の他端は、内槽３４１の内部に接続されている。本例では、第１配管５０の他端は、内槽３４１の底部３４１Ｂ（内槽３４１の深さ方向の底面）に接続されている。第１配管５０には、上流側（外槽３４３側）から順に、濃度検出器５０１、ポンプ５１、開閉バルブ５１１、ヒーター５２、フィルター５３、および開閉バルブ５１３が設けられている。 Inside the outer tank 343, one end of the first pipe 50 is connected. In the present example, one end of the first pipe 50 extends downward from above the outer tank 343 through the second opening 343P and extends inside the outer tank 343. That is, the opening at one end of the first pipe 50 is provided below the second opening 343P. The other end of the first pipe 50 is connected to the inside of the inner tank 341. In this example, the other end of the first pipe 50 is connected to the bottom portion 341B of the inner tank 341 (the bottom surface of the inner tank 341 in the depth direction). The first pipe 50 is provided with a concentration detector 501, a pump 51, an opening/closing valve 511, a heater 52, a filter 53, and an opening/closing valve 513 in order from the upstream side (outer tank 343 side).
　濃度検出器５０１は、第１配管５０を通過するリン酸水溶液中におけるリン酸濃度を検出する。濃度検出器５０１は、例えばリン酸水溶液の特定波長の光の吸光度を測定することによって、リン酸水溶液中のリン酸濃度を検出する。濃度検出器５０１は、外槽３４３から排出されたリン酸水溶液中におけるリン酸濃度を検出する。濃度検出器５０１は、制御部７に接続されており、検出されたリン酸濃度に応じた検出信号を制御部７に送信する。 The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution passing through the first pipe 50. The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution, for example, by measuring the absorbance of light having a specific wavelength in the phosphoric acid aqueous solution. The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution discharged from the outer tank 343. The concentration detector 501 is connected to the control unit 7 and transmits a detection signal according to the detected phosphoric acid concentration to the control unit 7.
　ポンプ５１は、第１配管５０を通じて、外槽３４３の内部からリン酸水溶液を排出し、当該リン酸水溶液を内槽３４１の内部に送る。ヒーター５２は、第１配管５０を通過するリン酸水溶液を加熱する。フィルター５３は、第１配管５０を通過するリン酸水溶液を濾過する。ポンプ５１の駆動によって、外槽３４３から排出されたリン酸水溶液が、内槽３４１へ移動する。そして、内槽３４１でオーバーフローしたリン酸水溶液が、再び外槽３４３へ流出する。このようにして、エッチング処理装置１において、リン酸水溶液の循環流が形成される。 The pump 51 discharges the phosphoric acid aqueous solution from the inside of the outer tank 343 through the first pipe 50 and sends the phosphoric acid aqueous solution into the inner tank 341. The heater 52 heats the phosphoric acid aqueous solution passing through the first pipe 50. The filter 53 filters the phosphoric acid aqueous solution passing through the first pipe 50. By driving the pump 51, the phosphoric acid aqueous solution discharged from the outer tank 343 moves to the inner tank 341. Then, the phosphoric acid aqueous solution overflowing in the inner tank 341 again flows into the outer tank 343. In this way, in the etching processing apparatus 1, a circulating flow of the phosphoric acid aqueous solution is formed.
　開閉バルブ５１１，５１３は、例えば電動式または電磁式のバルブであって、第１配管５０における処理液の流通をオンオフ制御する。「流通をオンオフ制御する」とは、配管内における処理液の流通を、流通可能な状態と流通不能な状態との２つの状態間で制御することをいう。開閉バルブ５１１，５１３は、制御部７に接続されており、制御部７によって開閉動作が制御される。 The open/ close valves 511 and 513 are, for example, electric or electromagnetic valves, and control the on/off of the flow of the processing liquid in the first pipe 50. "Controlling the flow on and off" means controlling the flow of the processing liquid in the pipe between two states, a flowable state and a non-flowable state. The opening/closing valves 511 and 513 are connected to the control unit 7, and the opening/closing operation is controlled by the control unit 7.
　図２に示すように、基板昇降機構３６は、複数の基板Ｗを垂直に起立した姿勢で水平方向に間隔をあけて配列させた状態で保持する保持具（不図示）を備えている。また、基板昇降機構３６は、当該保持具で各基板Ｗを保持した状態で、上位置Ｐｏｓ１と下位置Ｐｏｓ２の間で昇降する昇降モーター（不図示）を備えている。 As shown in FIG. 2, the substrate elevating mechanism 36 includes a holder (not shown) that holds a plurality of substrates W in a posture in which the substrates W are vertically erected and arranged horizontally at intervals. The substrate elevating mechanism 36 also includes an elevating motor (not shown) that elevates the substrate W between the upper position Pos1 and the lower position Pos2 while holding each substrate W by the holder.
　第１配管５０は、バイパス配管５５を有している。本例では、バイパス配管５５の一端は、第１配管５０におけるフィルター５３と開閉バルブ５１３（第１配管用バルブ）との間の配管部の分岐部５３１に接続されている。また、バイパス配管５５の他端は、第１配管５０における開閉バルブ５１３と内槽３４１との間の接続部５３３に接続されている。すなわち、バイパス配管５５は、第１配管５０におけるヒーター５２と開閉バルブ５１３との間の分岐部５３１から分岐して、内槽３４１につながっている。なお、バイパス配管５５の他端は、直に内槽３４１（例えば、底部３４１Ｂ）に接続されていてもよい。 The first pipe 50 has a bypass pipe 55. In this example, one end of the bypass pipe 55 is connected to a branch portion 531 of the pipe portion between the filter 53 and the opening/closing valve 513 (first pipe valve) in the first pipe 50. The other end of the bypass pipe 55 is connected to a connection portion 533 between the opening/closing valve 513 and the inner tank 341 in the first pipe 50. That is, the bypass pipe 55 branches from the branch portion 531 between the heater 52 and the opening/closing valve 513 in the first pipe 50 and is connected to the inner tank 341. The other end of the bypass pipe 55 may be directly connected to the inner tank 341 (for example, the bottom portion 341B).
　第１配管５０のバイパス配管５５には、上流側（分岐部５３１側）から順に、開閉バルブ５７、流量制御バルブ５８、および流量検出器５９が設けられている。開閉バルブ５７および流量制御バルブ５８は、制御部７に接続されており、制御部７からの制御信号に応じて動作する。開閉バルブ５７は、バイパス配管５５を流通するリン酸水溶液の流通をオンオフ制御し、流量制御バルブ５８は、バイパス配管５５を流通するリン酸水溶液の流量を調整する。「流量を調整する」とは、少なくとも処理液を流通させる状態において、その流量を変更することをいう。流量制御バルブ５８として、例えば電動式のニードル弁を採用してもよい。流量検出器５９は、バイパス配管５５を流通するリン酸水溶液の流量を検出する。流量検出器５９は、制御部７に接続されており、検出された流量に応じた検出信号を制御部７に送信する。流量検出器５９として、例えば配管の外側から超音波を用いて配管内の流量を検出する超音波流量計を採用してもよい。 The bypass pipe 55 of the first pipe 50 is provided with an opening/closing valve 57, a flow rate control valve 58, and a flow rate detector 59 in order from the upstream side (branch portion 531 side). The open/close valve 57 and the flow rate control valve 58 are connected to the control unit 7 and operate according to a control signal from the control unit 7. The open/close valve 57 controls on/off of the flow of the phosphoric acid aqueous solution flowing through the bypass pipe 55, and the flow rate control valve 58 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55. “Adjusting the flow rate” means changing the flow rate at least in the state where the processing liquid is allowed to flow. As the flow rate control valve 58, for example, an electric needle valve may be adopted. The flow rate detector 59 detects the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55. The flow rate detector 59 is connected to the control unit 7 and sends a detection signal according to the detected flow rate to the control unit 7. As the flow rate detector 59, for example, an ultrasonic flow meter that detects the flow rate in the pipe by using ultrasonic waves from the outside of the pipe may be adopted.
　エッチング処理装置１は、第２配管６０を備えている。第２配管６０は、第１配管５０と外槽３４３とを接続する配管経路を構成している。本例では、第２配管６０の一端は、第１配管５０の一部であるバイパス配管５５の経路途中に接続されている。より具体的には、第２配管６０の一端は、第１配管５０のバイパス配管５５における開閉バルブ５７と分岐部５３１との間の配管部に接続部６０１を介して接続されている。第２配管６０の他端は、外槽３４３の内部に接続されている。本例では、第２配管６０の他端は、外槽３４３の上方から第２開口３４３Ｐを通って下方に延びて外槽３４３の内部に延びている。 The etching processing apparatus 1 includes a second pipe 60. The second pipe 60 constitutes a pipe path that connects the first pipe 50 and the outer tank 343. In this example, one end of the second pipe 60 is connected to the middle of the bypass pipe 55 that is a part of the first pipe 50. More specifically, one end of the second pipe 60 is connected to a pipe portion between the opening/closing valve 57 and the branch portion 531 in the bypass pipe 55 of the first pipe 50 via a connection portion 601. The other end of the second pipe 60 is connected to the inside of the outer tank 343. In this example, the other end of the second pipe 60 extends downward from above the outer tank 343 through the second opening 343P to extend inside the outer tank 343.
　第２配管６０の経路途中には、開閉バルブ６１が設けられている。開閉バルブ６１は、制御部７に接続されており、制御部７からの制御信号に応じて、第２配管６０におけるリン酸水溶液の流通をオンオフ制御する。 An opening/closing valve 61 is provided in the middle of the route of the second pipe 60. The open/close valve 61 is connected to the control unit 7, and controls on/off of the flow of the phosphoric acid aqueous solution in the second pipe 60 according to a control signal from the control unit 7.
　本例では、制御部７は、開閉バルブ５１１，５１３を開放し、開閉バルブ５７，６１を閉鎖する第１循環制御処理を行う。この第１循環制御処理では、外槽３４３から排出されるリン酸水溶液と等量のリン酸水溶液が内槽３４１に戻される。 In this example, the control unit 7 performs the first circulation control process of opening the open/ close valves 511 and 513 and closing the open/ close valves 57 and 61. In this first circulation control process, an equal amount of phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.
　また、本例では、制御部７は、開閉バルブ５１１，５７，６１を開放し、開閉バルブ５１３を閉鎖する第２循環制御処理を行う。この第２循環制御処理では、外槽３４３から排出されるリン酸水溶液のうち、一部が第１配管５０のバイパス配管５５を介して内槽３４１戻されるとともに、残りが第２配管６０を介して外槽３４３に戻される。より詳細には、第１配管５０を介して外槽３４３から排出されたリン酸処理液は、開閉バルブ５１３が閉鎖されていることによって、分岐部５３１を通じてバイパス配管５５に導かれる。バイパス配管５５に導かれたリン酸水溶液のうち、一部はバイパス配管５５から接続部６０１を介して第２配管６０に流入し、外槽３４３に導かれる。また、残りのリン酸水溶液は、バイパス配管５５および接続部５３３を介して、内槽３４１に導かれる。 Further, in this example, the control unit 7 performs the second circulation control process of opening the open/ close valves 511, 57, 61 and closing the open/close valve 513. In the second circulation control process, part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55 of the first pipe 50, and the rest is passed through the second pipe 60. And returned to the outer tank 343. More specifically, the phosphoric acid treatment liquid discharged from the outer tank 343 through the first pipe 50 is guided to the bypass pipe 55 through the branch portion 531 because the opening/closing valve 513 is closed. A part of the phosphoric acid aqueous solution introduced into the bypass pipe 55 flows into the second pipe 60 from the bypass pipe 55 through the connecting portion 601, and is introduced into the outer tank 343. The remaining phosphoric acid aqueous solution is guided to the inner tank 341 via the bypass pipe 55 and the connecting portion 533.
　このように、制御部７による第１または第２循環制御処理において、開閉バルブ５１３は、第１配管５０を通過する処理液の流量を変更する第１配管用バルブとして機能する。また、開閉バルブ６１は、第２配管６０を通過する処理液の流量を変更する第２配管用バルブとして機能する。さらに、開閉バルブ５７または流量制御バルブ５８は、バイパス配管５５を流通する処理液の流量を変更するバイパス配管用バルブとして機能する。なお、「流量を変更する」とは、開閉バルブによって液体の流通をオンオフ制御する場合のほか、流量調整バルブによって流量を調整する場合も含む概念である。 In this way, in the first or second circulation control process by the control unit 7, the opening/closing valve 513 functions as a first piping valve that changes the flow rate of the processing liquid passing through the first piping 50. The open/close valve 61 also functions as a second pipe valve that changes the flow rate of the processing liquid passing through the second pipe 60. Further, the opening/closing valve 57 or the flow rate control valve 58 functions as a bypass piping valve that changes the flow rate of the processing liquid flowing through the bypass piping 55. Note that “changing the flow rate” is a concept including not only the case where the opening and closing valve controls the flow of the liquid on and off, but also the case where the flow rate adjusting valve adjusts the flow rate.
　制御部７が、第２循環制御処理を行うときに、流量検出器５９の検出結果に応じて流量制御バルブ５８を制御することによって、内槽３４１に戻されるリン酸水溶液の流量を調整することができる。すなわち、流量制御バルブ５８の開口を大きくすることで内槽３４１に戻されるリン酸水溶液の流量を増加でき、流量制御バルブ５８の開口を小さくすることで内槽３４１に戻されるリン酸水溶液の流量を低下できる。 When the control unit 7 performs the second circulation control process, by controlling the flow rate control valve 58 according to the detection result of the flow rate detector 59, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 is adjusted. You can That is, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be increased by increasing the opening of the flow rate control valve 58, and the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be increased by decreasing the opening of the flow rate control valve 58. Can be reduced.
　なお、流量制御バルブ５８によって、バイパス配管５５におけるリン酸水溶液の流通がオンオフ制御されてもよい。この場合、開閉バルブ５７は省略してもよい。また、流量制御バルブ５８を設けることは必須ではない。流量制御バルブ５８を省略する場合、バイパス配管５５を流れるリン酸水溶液の流量を調整せず、開閉バルブ５７によってリン酸水溶液の流通がオンオフ制御される。さらに、バイパス配管５５を設けることは必須ではなく、省略してもよい。バイパス配管５５を省略する場合、第２配管６０の一端（接続部６０１）を、例えば第１配管５０におけるヒーター５２と内槽３４１との間（例えば、分岐部５３１の位置）に直に接続してもよい。この場合、第１配管５０において循環流が形成されているときに、開閉バルブ６１が開放されることによって、第１配管５０のリン酸水溶液の一部が、第２配管６０に流れ込み、外槽３４３へ送られる。これにより、第１配管５０を通って内槽３４１に戻されるリン酸水溶液の量を低減できる。 The flow control valve 58 may control the flow of the phosphoric acid aqueous solution in the bypass pipe 55 on and off. In this case, the open/close valve 57 may be omitted. Further, it is not essential to provide the flow rate control valve 58. When the flow rate control valve 58 is omitted, the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55 is not adjusted, and the circulation of the phosphoric acid aqueous solution is controlled by the opening/closing valve 57. Further, the provision of the bypass pipe 55 is not essential and may be omitted. When the bypass pipe 55 is omitted, one end (the connection portion 601) of the second pipe 60 is directly connected to, for example, the heater 52 and the inner tank 341 in the first pipe 50 (for example, the position of the branch portion 531). May be. In this case, when the circulation flow is formed in the first pipe 50, the opening/closing valve 61 is opened, so that a part of the phosphoric acid aqueous solution in the first pipe 50 flows into the second pipe 60 and the outer tank Sent to 343. Thereby, the amount of the phosphoric acid aqueous solution returned to the inner tank 341 through the first pipe 50 can be reduced.
　エッチング処理装置１は、リン酸水溶液供給部４０を備えている。リン酸水溶液供給部４０は、外槽３４３に所定濃度のリン酸水溶液を供給する。なお、リン酸水溶液供給部４０は、内槽３４１または第１配管５０の所定部位にリン酸水溶液を供給してもよい。リン酸水溶液供給部４０は、リン酸水溶液を貯留するタンクなどを含む供給源、および当該供給源と外槽３４３とを接続する供給配管４０１を含む。供給配管４０１には、上流側（供給源側）から順に、流量検出器４０３、流量制御バルブ４０５、および開閉バルブ４０７が設けられている。流量検出器４０３は、供給配管４０１を流れるリン酸水溶液の流量を検出する。流量制御バルブ４０５は、供給配管４０１を流れるリン酸水溶液の流量を調整する。開閉バルブ４１７は、供給配管４０１におけるリン酸水溶液の流通をオンオフ制御する。 The etching processing apparatus 1 includes a phosphoric acid aqueous solution supply unit 40. The phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution having a predetermined concentration to the outer tank 343. The phosphoric acid aqueous solution supply unit 40 may supply the phosphoric acid aqueous solution to the inner tank 341 or a predetermined portion of the first pipe 50. The phosphoric acid aqueous solution supply unit 40 includes a supply source including a tank that stores the phosphoric acid aqueous solution, and a supply pipe 401 that connects the supply source and the outer tank 343. The supply pipe 401 is provided with a flow rate detector 403, a flow rate control valve 405, and an opening/closing valve 407 in order from the upstream side (supply source side). The flow rate detector 403 detects the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401. The flow rate control valve 405 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401. The open/close valve 417 controls on/off of the flow of the phosphoric acid aqueous solution in the supply pipe 401.
　流量検出器４０３、流量制御バルブ４０５および開閉バルブ４０７は制御部７に接続されている。制御部７は、流量検出器４０３から送信された流量を示す信号に基づいて、流量制御バルブ４０５を制御する。これにより、リン酸水溶液供給部４０は、リン酸水溶液を制御された流量で外槽３４３に供給する。 The flow rate detector 403, the flow rate control valve 405, and the open/close valve 407 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 405 based on the signal indicating the flow rate transmitted from the flow rate detector 403. As a result, the phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution to the outer tank 343 at a controlled flow rate.
　基板液処理装置１００は、純水供給部４１を備えている。純水供給部４１は、純水を外槽３４３に供給する。なお、純水供給部４１は、内槽３４１または第１配管５０の所定部位に純水を供給してもよい。純水は、例えばリン酸水溶液を加熱することにより蒸発した水分を補給するために供給される。純水供給部４１は、所定温度の純水を供給する供給源、および当該供給源と外槽３４３とを接続する供給配管４１１を含む。供給配管４１１には、上流側（供給源側）から順に、流量検出器４１３、流量制御バルブ４１５、および開閉バルブ４１７が設けられている。流量検出器４１３は、供給配管４１１を流れる純水の流量を検出する。流量制御バルブ４１５は、供給配管４１１を流れる純水の流量を調整する。開閉バルブ４１７は、供給配管４１１における純水の流通をオンオフ制御する。 The substrate liquid processing apparatus 100 includes a pure water supply unit 41. The pure water supply unit 41 supplies pure water to the outer tank 343. The pure water supply unit 41 may supply pure water to the inner tank 341 or a predetermined portion of the first pipe 50. Pure water is supplied in order to supplement the water vaporized by heating the phosphoric acid aqueous solution, for example. The pure water supply unit 41 includes a supply source that supplies pure water at a predetermined temperature, and a supply pipe 411 that connects the supply source and the outer tank 343. The supply pipe 411 is provided with a flow rate detector 413, a flow rate control valve 415, and an opening/closing valve 417 in order from the upstream side (supply source side). The flow rate detector 413 detects the flow rate of pure water flowing through the supply pipe 411. The flow rate control valve 415 adjusts the flow rate of pure water flowing through the supply pipe 411. The open/close valve 417 controls on/off of the flow of pure water in the supply pipe 411.
　流量検出器４１３、流量制御バルブ４１５および開閉バルブ４１７は制御部７に接続されている。制御部７は、流量検出器４１３から送信された流量を示す信号に基づいて、流量制御バルブ４１５を制御する。これにより、純水供給部４１は、純水を制御された流量で外槽３４３に供給する。 The flow rate detector 413, the flow rate control valve 415, and the open/close valve 417 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 415 based on the signal indicating the flow rate transmitted from the flow rate detector 413. As a result, the pure water supply unit 41 supplies pure water to the outer tank 343 at a controlled flow rate.
　エッチング処理装置１は、シリコン供給部４２を備えている。シリコン供給部４２は、シリコン水溶液（例えば、ヘキサフルオロケイ酸水溶液（Ｈ２ＳｉＦ６＋Ｈ２Ｏ））を外槽３４３に供給する。なお、シリコン供給部４２は、内槽３４１または第１配管５０の所定部位にシリコン水溶液を供給してもよい。シリコン供給部４２は、シリコン水溶液を供給する供給源、および当該供給源と外槽３４３とを接続する供給配管４２１を含む。供給配管４２１には、上流側（供給側）から順に、流量検出器４２３、流量制御バルブ４２５、および開閉バルブ４２７が設けられている。流量検出器４２３は、供給配管４２１を流れるシリコン水溶液の流量を検出する。流量制御バルブ４２５は、供給配管４２１を流れるシリコン水溶液の流量を調整する。開閉バルブ４２７は供給配管４２１におけるシリコン水溶液の流通をオンオフ制御する。 The etching processing apparatus 1 includes a silicon supply unit 42. The silicon supply unit 42 supplies a silicon aqueous solution (for example, hexafluorosilicic acid aqueous solution (H 2 SiF 6 +H 2 O)) to the outer tank 343. The silicon supply unit 42 may supply the silicon aqueous solution to the inner tank 341 or a predetermined portion of the first pipe 50. The silicon supply unit 42 includes a supply source that supplies the silicon aqueous solution, and a supply pipe 421 that connects the supply source and the outer tank 343. The supply pipe 421 is provided with a flow rate detector 423, a flow rate control valve 425, and an opening/closing valve 427 in order from the upstream side (supply side). The flow rate detector 423 detects the flow rate of the aqueous silicon solution flowing through the supply pipe 421. The flow rate control valve 425 adjusts the flow rate of the silicon aqueous solution flowing through the supply pipe 421. The opening/closing valve 427 controls on/off of the flow of the silicon aqueous solution in the supply pipe 421.
　流量検出器４２３、流量制御バルブ４２５および開閉バルブ４２７は制御部７に接続されている。制御部７は、流量検出器４２３から送信された流量を示す信号に基づいて、流量制御バルブ４２５を制御する。これにより、シリコン供給部４２は、シリコンを制御された流量で外槽３４３に供給する。 The flow rate detector 423, the flow rate control valve 425, and the open/close valve 427 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 425 based on the signal indicating the flow rate transmitted from the flow rate detector 423. Thereby, the silicon supply unit 42 supplies silicon to the outer tank 343 at a controlled flow rate.
　第１配管５０における、ヒーター５２とフィルター５３とを接続する配管部には、廃棄配管９０が接続されている。廃棄配管９０は、処理槽３４のリン酸水溶液を基板液処理装置１００の外部に廃棄する際に使用される配管経路である。廃棄配管９０には、上流側（第１配管５０側）から順に、濃度検出器９０１、廃棄バルブ９１、冷却タンク９３、および廃棄バルブ９５が設けられている。 A waste pipe 90 is connected to a pipe portion that connects the heater 52 and the filter 53 in the first pipe 50. The waste pipe 90 is a pipe path used when discarding the phosphoric acid aqueous solution in the processing tank 34 to the outside of the substrate liquid processing apparatus 100. The waste pipe 90 is provided with a concentration detector 901, a waste valve 91, a cooling tank 93, and a waste valve 95 in order from the upstream side (first pipe 50 side).
　濃度検出器９０１は、廃棄配管９０を通過するリン酸水溶液中におけるシリコン濃度を検出する。濃度検出器９０１は、例えばリン酸水溶液における特定波長の光の吸光度を測定することによって、シリコン濃度を検出する。濃度検出器９０１は、制御部７に接続されており、検出されたシリコン濃度に応じた検出信号を制御部７に送信する。 The concentration detector 901 detects the silicon concentration in the phosphoric acid aqueous solution passing through the waste pipe 90. The concentration detector 901 detects the silicon concentration, for example, by measuring the absorbance of light of a specific wavelength in phosphoric acid aqueous solution. The concentration detector 901 is connected to the control unit 7 and transmits a detection signal according to the detected silicon concentration to the control unit 7.
　冷却タンク９３は、処理槽３４から排出された比較的高温のリン酸水溶液を一時的に貯留して外部に廃棄可能な温度にまで冷却する。冷却タンク９３よりも上流側に設けられた廃棄バルブ９１は、第１配管５０から冷却タンク９３にリン酸水溶液を流入させるときに開放される。また、冷却タンク９３よりも下流側に設けられた廃棄バルブ９５は、リン酸水溶液を冷却タンク９３から排出するときに開放される。廃棄バルブ９１，９５は、制御部７に接続されており、制御部７によって開閉制御される。 The cooling tank 93 temporarily stores the relatively high-temperature phosphoric acid aqueous solution discharged from the processing tank 34 and cools it to a temperature at which it can be discarded to the outside. The waste valve 91 provided on the upstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution is flowed into the cooling tank 93 from the first pipe 50. Further, the discard valve 95 provided on the downstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution is discharged from the cooling tank 93. The discard valves 91 and 95 are connected to the control unit 7 and are opened/closed by the control unit 7.
　第１配管５０を通過するリン酸水溶液は、適宜のタイミングで廃棄配管９０に送られる。これにより、そのリン酸水溶液中のシリコン濃度が濃度検出器９０１によって検出される。シリコン濃度が既定よりも高い場合には、純水供給部４１からの純水、またはリン酸水溶液供給部４０からのリン酸水溶液が適宜供給されることによって、循環系のリン酸水溶液におけるシリコン濃度の低下が図られる。 The phosphoric acid aqueous solution passing through the first pipe 50 is sent to the waste pipe 90 at an appropriate timing. Thereby, the concentration detector 901 detects the silicon concentration in the phosphoric acid aqueous solution. When the silicon concentration is higher than the predetermined value, the pure water from the pure water supply unit 41 or the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply unit 40 is appropriately supplied, so that the silicon concentration in the circulating phosphoric acid aqueous solution is increased. Is reduced.
　＜リン酸水溶液の循環流の形成について＞
　処理槽３４において基板Ｗを処理する場合、処理槽３４および第１配管５０におけるリン酸水溶液の循環流が形成される。この循環流の形成のため、まず、処理槽３４にリン酸水溶液が貯留される。具体的には、リン酸水溶液供給部４０が液処理部３９の外槽３４３にリン酸水溶液を供給するとともに、第１配管５０のポンプ５１が外槽３４３から内槽３４１に向けてリン酸水溶液を送る。内槽３４１の内部がリン酸水溶液で満たされると、内槽３４１の第１開口３４１Ｐからあふれたリン酸水溶液が外槽３４３に移動し始める。第１配管５０の一端が、外槽３４３に貯留されたリン酸水溶液に到達すると、第１配管５０を通じて外槽３４３のリン酸水溶液が排出され始める。このようにして、処理槽３４および第１配管５０の循環系において、リン酸水溶液が循環する循環流が形成される。 <Regarding formation of circulating flow of phosphoric acid aqueous solution>
When the substrate W is processed in the processing bath 34, a circulating flow of the phosphoric acid aqueous solution is formed in the processing bath 34 and the first pipe 50. In order to form this circulating flow, first, the phosphoric acid aqueous solution is stored in the processing tank 34. Specifically, the phosphoric acid aqueous solution supply unit 40 supplies the phosphoric acid aqueous solution to the outer tank 343 of the liquid processing unit 39, and the pump 51 of the first pipe 50 directs the phosphoric acid aqueous solution from the outer tank 343 toward the inner tank 341. To send. When the inside of the inner tank 341 is filled with the phosphoric acid aqueous solution, the phosphoric acid solution overflowing from the first opening 341P of the inner tank 341 starts to move to the outer tank 343. When one end of the first pipe 50 reaches the phosphoric acid aqueous solution stored in the outer tank 343, the phosphoric acid aqueous solution in the outer tank 343 starts to be discharged through the first pipe 50. In this way, a circulating flow in which the phosphoric acid aqueous solution circulates is formed in the circulation system of the processing tank 34 and the first pipe 50.
　循環流が形成される前、あるいは形成された後の適宜のタイミングで、内槽３４１のリン酸水溶液が所定温度（例えば８０℃）となるように、ヒーター５２が第１配管５０を流通するリン酸水溶液を加熱する。リン酸水溶液が高温状態である場合、水分が蒸発するため、時間経過とともにリン酸水溶液中のリン酸濃度が増加する可能性がある。制御部７は、濃度検出器５０１によって検出されたリン酸濃度が予め定められた管理上限値を超えた場合、純水供給部４１から純水を供給する。リン酸濃度の調節のための純水供給は、基板Ｗがリン酸水溶液中に浸漬されているとき（つまり基板Ｗの液処理中）の任意のタイミングで行われてもよいし、基板Ｗが処理液中に浸漬されていないときに行われてもよい。 Before the circulation flow is formed or at an appropriate timing after the circulation flow is formed, the heater 52 causes phosphorus to flow through the first pipe 50 so that the phosphoric acid aqueous solution in the inner tank 341 reaches a predetermined temperature (for example, 80° C.). The aqueous acid solution is heated. When the phosphoric acid aqueous solution is in a high temperature state, water evaporates, so that the phosphoric acid concentration in the phosphoric acid aqueous solution may increase with time. When the phosphoric acid concentration detected by the concentration detector 501 exceeds a predetermined control upper limit value, the control unit 7 supplies pure water from the pure water supply unit 41. The pure water supply for adjusting the phosphoric acid concentration may be performed at any timing when the substrate W is immersed in the phosphoric acid aqueous solution (that is, during the liquid processing of the substrate W). It may be performed when it is not immersed in the treatment liquid.
　図３は、エッチング処理装置１におけるエッチング処理時の各要素の動作状況を説明するためのタイミングチャートである。図３において、横軸は時間を示しており、縦方向において上から順に基板昇降機構３６、開閉バルブ５１３、開閉バルブ５７、および開閉バルブ６１の各動作を示している。なお、基板昇降機構３６については、処理槽３４よりも上方の上位置Ｐｏｓ１にある状態を示す「上」と、処理槽３４の内部である下位置Ｐｏｓ２にある状態を示す「下」との間の状態変化を示している（図２参照）。基板昇降機構３６がロット（基板Ｗ）を保持した状態で下位置Ｐｏｓ２に移動することによって、ロットがエッチング処理される。また、開閉バルブ５１３，５７，６１については、開状態を示す「開」と閉状態を示す「閉」との間の状態変化を示している。また、図３に示す「内槽へ戻る量」は、ポンプ５１の作動によって、第１配管５０を通じて内槽３４１に流入するリン酸水量液の量を示している。 FIG. 3 is a timing chart for explaining the operation status of each element during etching processing in the etching processing apparatus 1. In FIG. 3, the horizontal axis represents time, and the operations of the substrate elevating mechanism 36, the opening/closing valve 513, the opening/closing valve 57, and the opening/closing valve 61 are shown in this order from the top in the vertical direction. Regarding the substrate elevating/lowering mechanism 36, it is located between “upper”, which is in an upper position Pos1 above the processing bath 34, and “lower”, which is in a lower position Pos2 inside the processing bath 34. Shows the state change (see FIG. 2). The lot is etched by the substrate elevating mechanism 36 moving to the lower position Pos2 while holding the lot (substrate W). Further, the open/ close valves 513, 57, 61 show a state change between “open” indicating an open state and “closed” indicating a closed state. Further, the “amount returned to the inner tank” shown in FIG. 3 indicates the amount of the phosphoric acid water amount liquid flowing into the inner tank 341 through the first pipe 50 by the operation of the pump 51.
　図３では、エッチング処理装置１の処理槽３４において、複数の基板Ｗを含む１つのロットをエッチング処理する１サイクルのタイミングチャートを示している。このエッチング処理は、搬入工程Ｓ１１と、浸漬工程Ｓ１２と、搬出工程Ｓ１３とを含む。 FIG. 3 shows a timing chart of one cycle in which one lot containing a plurality of substrates W is etched in the processing bath 34 of the etching processing apparatus 1. This etching process includes a carry-in step S11, a dipping step S12, and a carry-out step S13.
　搬入工程Ｓ１１は、上位置Ｐｏｓ１にある基板昇降機構３６が、ロット搬送機構１９からロットを受け取る処理を含む。浸漬工程Ｓ１２は、基板昇降機構３６が上位置Ｐｏｓ１から下位置Ｐｏｓ２に下降することによって、ロットを内槽３４１に貯留されたリン酸水溶液に浸漬させる処理を含む。この浸漬工程Ｓ１２が行われることによって、基板Ｗがエッチング処理される。搬出工程Ｓ１３は、基板昇降機構３６が下位置Ｐｏｓ２から上位置Ｐｏｓ１に上昇することによって、ロットを内槽３４１に貯留されたリン酸水溶液から引き上げる処理、およびロット搬送機構１９が上位置Ｐｏｓ１の基板昇降機構３６からロットを受け取る処理を含む。ロット搬送機構１９に渡されたロットは、処理槽３５においてリンス液で処理される。 The carry-in step S11 includes a process in which the substrate elevating mechanism 36 located at the upper position Pos1 receives the lot from the lot transfer mechanism 19. The dipping step S12 includes a process of dipping the lot in the phosphoric acid aqueous solution stored in the inner tank 341 by lowering the substrate elevating mechanism 36 from the upper position Pos1 to the lower position Pos2. By performing this immersion step S12, the substrate W is etched. In the carry-out step S13, the substrate elevating mechanism 36 moves from the lower position Pos2 to the upper position Pos1 to lift the lot from the phosphoric acid aqueous solution stored in the inner tank 341, and the lot transfer mechanism 19 moves the substrate to the upper position Pos1. The process of receiving the lot from the elevating mechanism 36 is included. The lot transferred to the lot transfer mechanism 19 is treated with the rinse liquid in the treatment tank 35.
　また、処理槽３４におけるエッチング処理の１サイクルには、順に、通常循環期間Ｔ１、バイパス循環期間Ｔ２、および通常循環期間Ｔ３が含まれる。通常循環期間Ｔ１，Ｔ３は、ポンプ５１の作動によって、外槽３４３から排出されたリン酸水溶液と等量のリン酸水溶液が第１配管５０を通じて内槽３４１に戻される循環が行われる期間である。以下、通常循環期間Ｔ１，Ｔ３で行われる循環を「通常循環」と称する場合がある。バイパス循環期間Ｔ２は、ポンプ５１の作動によって、外槽３４３から排出されたリン酸水溶液のうち、一部がバイパス配管５５を通じて内槽３４１に戻され、残りが第２配管６０を通じて外槽３４３に戻される循環が行われる期間である。以下、バイパス循環期間Ｔ２で行われる循環を「バイパス循環」と称する場合がある。 Further, one cycle of the etching process in the processing tank 34 includes a normal circulation period T1, a bypass circulation period T2, and a normal circulation period T3 in order. The normal circulation periods T1 and T3 are periods in which the pump 51 operates to circulate the phosphoric acid aqueous solution in an amount equal to that of the phosphoric acid aqueous solution discharged from the outer tank 343 to the inner tank 341 through the first pipe 50. .. Hereinafter, the circulation performed in the normal circulation periods T1 and T3 may be referred to as “normal circulation”. During the bypass circulation period T2, part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55 by the operation of the pump 51, and the rest is transferred to the outer tank 343 through the second pipe 60. This is the period during which the returned circulation is performed. Hereinafter, the circulation performed in the bypass circulation period T2 may be referred to as “bypass circulation”.
　通常循環期間Ｔ１，Ｔ３の通常循環では、制御部７が上述の第１循環制御処理を行う。すなわち、通常循環期間Ｔ１，Ｔ３では、第１配管５０の開閉バルブ５１１，５１３が開放され、第１配管５０のバイパス配管５５の開閉バルブ５７および第２配管６０の開閉バルブ６１が閉状態とされる。この通常循環では、第１配管５０を介して外槽３４３から排出されたリン酸水溶液は、そのまま第１配管５０を通って内槽３４１に導かれる。このため、通常循環期間Ｔ１，Ｔ３では、外槽３４３からのリン酸水溶液の全てが、内槽３４１に戻される。すなわち、外槽３４３から排出されるリン酸水溶液と等量のリン酸水溶液が内槽３４１に戻される。 In the normal circulation of the normal circulation periods T1 and T3, the control unit 7 performs the above-described first circulation control process. That is, in the normal circulation periods T1 and T3, the opening/closing valves 511 and 513 of the first pipe 50 are opened, and the opening/closing valve 57 of the bypass pipe 55 of the first pipe 50 and the opening/closing valve 61 of the second pipe 60 are closed. It In this normal circulation, the phosphoric acid aqueous solution discharged from the outer tank 343 through the first pipe 50 is guided as it is to the inner tank 341 through the first pipe 50. Therefore, in the normal circulation periods T1 and T3, all of the phosphoric acid aqueous solution from the outer tank 343 is returned to the inner tank 341. That is, the same amount of phosphoric acid aqueous solution as the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.
　これに対して、バイパス循環期間Ｔ２のバイパス循環では、制御部７が上述の第２循環制御処理を行う。すなわち、第１配管５０の開閉バルブ５１３が閉状態とされ、バイパス配管５５の開閉バルブ５７および第２配管６０の開閉バルブ６１が開状態とされる。バイパス循環では、外槽３４３から第１配管５０を介して排出されたリン酸水溶液は、分岐部５３１において、バイパス配管５５の側に移動する。さらに、接続部６０１において、リン酸水溶液のうち、一部は第２配管６０を通過して外槽３４３に導かれ、残りはバイパス配管５５を通過して接続部５３３を介して第１配管５０に移動した後、内槽３４１に導かれる。バイパス循環においても、ヒーター５２によって加熱されたリン酸水溶液を内槽３４１に戻すことができる。このため、内槽３４１のリン酸水溶液の温度の低下を抑制できる。 On the other hand, in the bypass circulation of the bypass circulation period T2, the control unit 7 performs the above-mentioned second circulation control process. That is, the opening/closing valve 513 of the first pipe 50 is closed, and the opening/closing valve 57 of the bypass pipe 55 and the opening/closing valve 61 of the second pipe 60 are opened. In the bypass circulation, the phosphoric acid aqueous solution discharged from the outer tank 343 through the first pipe 50 moves to the bypass pipe 55 side in the branching section 531. Further, in the connection portion 601, a part of the phosphoric acid aqueous solution passes through the second pipe 60 and is guided to the outer tank 343, and the rest passes through the bypass pipe 55 and the connection portion 533 and the first pipe 50. After being moved to, it is guided to the inner tank 341. Also in the bypass circulation, the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. Therefore, it is possible to suppress a decrease in the temperature of the phosphoric acid aqueous solution in the inner tank 341.
　ここで、ポンプ５１の作動によって外槽３４３から排出されるリン酸水溶液の総量をＶとする。すると、リン酸水溶液の内槽３４１への流量は、通常循環期間Ｔ１，Ｔ３のときの流量Ｖ１は総量Ｖと略等しくなるが、バイパス循環期間Ｔ２では流量Ｖ１よりも小さい流量Ｖ２となる。これは、バイパス循環期間Ｔ２では第２配管６０が通過可能となるため、一部のリン酸水溶液が第２配管６０を通じて外槽３４３に導かれるためである。すなわち、外槽３４３に導かれるリン酸水溶液の量は、Ｖ－Ｖ２で表される。 Here, the total amount of the phosphoric acid aqueous solution discharged from the outer tank 343 by the operation of the pump 51 is V. Then, the flow rate of the phosphoric acid aqueous solution to the inner tank 341 is a flow rate V1 in the normal circulation periods T1 and T3 that is substantially equal to the total amount V, but is a flow rate V2 smaller than the flow rate V1 in the bypass circulation period T2. This is because the second pipe 60 can pass through during the bypass circulation period T2, so that a part of the phosphoric acid aqueous solution is guided to the outer tank 343 through the second pipe 60. That is, the amount of the phosphoric acid aqueous solution introduced to the outer tank 343 is represented by V-V2.
　バイパス循環期間Ｔ２では、流量検出器５９が、バイパス配管５５を通じて内槽３４１に導かれる流量が検出される。流量検出器５９によって検出される流量は、内槽３４１への流量と等しい。そこで、バイパス循環期間Ｔ２では、制御部７は、流量検出器５９の検出信号が予め定められた流量Ｖ２に近づくように流量制御バルブ５８を制御する。これによって、バイパス循環期間Ｔ２における内槽３４１への流量を適正に調整できる。なお、制御部７は、Ｖ２の大きさの変更を、操作部を介して受け付けてもよい。 During the bypass circulation period T2, the flow rate detector 59 detects the flow rate introduced to the inner tank 341 through the bypass pipe 55. The flow rate detected by the flow rate detector 59 is equal to the flow rate to the inner tank 341. Therefore, in the bypass circulation period T2, the control unit 7 controls the flow rate control valve 58 so that the detection signal of the flow rate detector 59 approaches the predetermined flow rate V2. This makes it possible to properly adjust the flow rate to the inner tank 341 during the bypass circulation period T2. The control unit 7 may accept a change in the magnitude of V2 via the operation unit.
　図３の例では、浸漬工程Ｓ１２の前の搬入工程Ｓ１１は通常循環期間Ｔ１に含まれている。このため、搬入工程Ｓ１１においては通常循環が行われる。この場合、浸漬工程Ｓ１２の開始前に、ヒーター５２によって加熱されたリン酸水溶液の全量が内槽３４１の内部に供給されるため、内槽３４１のリン酸水溶液の温度を迅速に所望温度に到達させることができる。また、先のロットのエッチング処理の後、リン酸またはシリコン濃度の調整のために各供給部４１～４３から液体が処理槽３４に供給された場合、搬入工程Ｓ１１において通常循環を行うことによって、浸漬工程Ｓ１２の前に内槽３４１のリン酸水溶液におけるリン酸濃度およびシリコン濃度の調整を迅速に行うことができる。 In the example of FIG. 3, the carrying-in step S11 before the immersion step S12 is included in the normal circulation period T1. Therefore, normal circulation is performed in the carry-in step S11. In this case, before the immersion step S12 is started, the entire amount of the phosphoric acid aqueous solution heated by the heater 52 is supplied into the inner tank 341, so that the temperature of the phosphoric acid aqueous solution in the inner tank 341 quickly reaches the desired temperature. Can be made. Further, after the etching treatment of the previous lot, when the liquid is supplied to the processing tank 34 from each of the supply units 41 to 43 for adjusting the phosphoric acid or silicon concentration, by performing normal circulation in the carry-in step S11, Before the immersion step S12, the phosphoric acid concentration and the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 can be quickly adjusted.
　図３の例では、浸漬工程Ｓ１２が行われる期間のうち、一部がバイパス循環期間Ｔ２とされている。具体的には、浸漬工程Ｓ１２の途中で、一時的にバイパス循環が行われる。バイパス循環を行うことによって、通常循環のときよも、内槽３４１におけるリン酸水溶液の流れの発生を軽減できる。すなわち、内槽３４１におけるリン酸水溶液の流動のばらつきを軽減できるため、基板Ｗにおけるエッチング量の面内ばらつきを低減できる。 In the example of FIG. 3, a part of the period in which the immersion step S12 is performed is the bypass circulation period T2. Specifically, bypass circulation is temporarily performed during the immersion step S12. By performing the bypass circulation, the generation of the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced more than in the normal circulation. That is, since the variation in the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced, the in-plane variation in the etching amount on the substrate W can be reduced.
　図３の例では、浸漬工程Ｓ１２の初期は、通常循環期間Ｔ１に含まれている。すなわち、浸漬工程Ｓ１２においては、最初に通常循環が一定時間行われる。浸漬工程Ｓ１２の開始直後は、内槽３４１のリン酸処理液にロットが浸漬されるため、リン酸水溶液の温度が比較的低下しやすい。そこで、浸漬工程Ｓ１２の開始直後に、通常循環が行われることによって、ヒーター５２で加熱されたリン酸水溶液の全てを内槽３４１に戻すことができる。これにより、内槽３４１のリン酸水溶液の温度低下を軽減できる。 In the example of FIG. 3, the initial period of the immersion step S12 is included in the normal circulation period T1. That is, in the dipping step S12, normal circulation is first performed for a fixed time. Immediately after the immersion step S12 is started, the lot is immersed in the phosphoric acid treatment liquid in the inner tank 341, so that the temperature of the phosphoric acid aqueous solution is relatively likely to decrease. Therefore, the normal circulation is performed immediately after the start of the immersion step S12, whereby all of the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. This can reduce the temperature drop of the phosphoric acid aqueous solution in the inner tank 341.
　図３の例では、浸漬工程Ｓ１２の後期は、通常循環期間Ｔ３に含まれている。すなわち、浸漬工程Ｓ１２の後期にバイパス循環から通常循環に移行して、搬出工程Ｓ１３が行われる。一般に、浸漬工程Ｓ１２では、各基板Ｗからシリコンがリン酸水溶液に溶出するため、内槽３４１のリン酸水溶液中のシリコン濃度が高くなりやすい。そこで、浸漬工程Ｓ１２が完結前に通常循環を行うことで、内槽３４１のリン酸水溶液を迅速に外槽３４３に移動させることが望ましい。リン酸水溶液のシリコン濃度が基準値よりも大きい場合には、純水供給部４１またはリン酸水溶液供給部４３からの純水またはリン酸水溶液の供給によって、適宜循環系のリン酸水溶液中のシリコン濃度が低下される。したがって、通常循環により、内槽３４１の内部におけるリン酸水溶液中のシリコン濃度を迅速に適正化できる。 In the example of FIG. 3, the latter half of the immersion step S12 is included in the normal circulation period T3. That is, in the latter stage of the immersion step S12, the bypass circulation is switched to the normal circulation, and the carry-out step S13 is performed. In general, in the immersion step S12, silicon is eluted from each substrate W into the phosphoric acid aqueous solution, so that the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 tends to be high. Therefore, it is desirable to quickly move the phosphoric acid aqueous solution in the inner tank 341 to the outer tank 343 by performing normal circulation before the immersion step S12 is completed. When the silicon concentration of the phosphoric acid aqueous solution is higher than the reference value, the pure water or the phosphoric acid aqueous solution is supplied from the pure water supply unit 41 or the phosphoric acid aqueous solution supply unit 43 to appropriately supply the silicon in the circulating phosphoric acid aqueous solution. The concentration is reduced. Therefore, by normal circulation, the silicon concentration in the phosphoric acid aqueous solution inside the inner tank 341 can be promptly optimized.
　図３の例では、浸漬工程Ｓ１２の後の搬出工程Ｓ１３においても、通常循環が行われる。この場合、浸漬工程Ｓ１２の途中または完結後に各供給部４１～４３から各処理液が供給されることによって、次のエッチング処理サイクルが開始されるまでの間に、内槽３４１におけるリン酸水溶液中のリン酸濃度およびシリコン濃度を迅速に適正化できる。また、浸漬工程Ｓ１２において、バイパス循環が行われた場合、内槽３４１のリン酸水溶液の温度低下が起こる可能性がある。これに対して、浸漬工程Ｓ１２の後の搬出工程Ｓ１３において、通常循環が行われることにより、内槽３４１のリン酸水溶液の温度を迅速に高めることができる。 In the example of FIG. 3, normal circulation is also performed in the carry-out step S13 after the immersion step S12. In this case, in the phosphoric acid aqueous solution in the inner tank 341, the processing solutions are supplied from the supply sections 41 to 43 during or after the immersion step S12 until the next etching processing cycle is started. The phosphoric acid concentration and silicon concentration of can be promptly optimized. Further, in the immersion step S12, if bypass circulation is performed, the temperature of the phosphoric acid aqueous solution in the inner tank 341 may decrease. On the other hand, in the carry-out step S13 after the immersion step S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly raised by the normal circulation.
　なお、図３の例では、浸漬工程Ｓ１２の一部のみでバイパス循環が行われるように設定されている。しかしながら、浸漬工程Ｓ１２の全部でバイパス循環が行われてもよい。また、搬入工程Ｓ１１または搬出工程Ｓ１３の一部または全部で、バイパス循環が行われてもよい。 Note that, in the example of FIG. 3, the bypass circulation is set to be performed only in a part of the immersion step S12. However, bypass circulation may be performed in all of the immersion step S12. In addition, bypass circulation may be performed in part or all of the carry-in step S11 or the carry-out step S13.
　また、バイパス循環は、全てのエッチング処理のサイクルで行われることは必須ではない。例えば、制御部７は、エッチング処理のサイクル毎に、バイパス循環を行うか否かの変更を、操作部を介して受け付けてもよい。また、各サイクルにおいて、バイパス循環を実行するタイミングの設定または変更を、操作部を介して受け付けてもよい。また、制御部７は、所定要件の成立または不成立に応じて、自動でバイパス循環を実行するようにしてもよい。この場合、制御部７は、所定要件を満たすか否かを閾値に基づいて判定する判定部を備えていてもよい。また、所定要件として、例えば、基板Ｗのエッチング量、および循環系のリン酸水溶液の温度、リン酸濃度またはシリコン濃度などが設定されてもよい。 Also, it is not essential that the bypass circulation is performed in every etching process cycle. For example, the control unit 7 may accept a change as to whether or not to perform bypass circulation for each cycle of the etching process via the operation unit. Further, in each cycle, setting or changing of the timing of executing bypass circulation may be accepted via the operation unit. Further, the control unit 7 may automatically execute the bypass circulation depending on whether or not the predetermined requirement is satisfied. In this case, the control unit 7 may include a determination unit that determines whether or not a predetermined requirement is satisfied based on a threshold value. Further, as the predetermined requirements, for example, the etching amount of the substrate W, the temperature of the circulating phosphoric acid aqueous solution, the phosphoric acid concentration or the silicon concentration, and the like may be set.
　また、エッチング処理装置１に備えられた各開閉バルブおよび各流量制御バルブは、制御部７によって制御されるものとして説明したが、オペレータが手動で操作できるようにしてもよい。そして、オペレータが手動で操作することによって、通常循環とバイパス循環との切り替えが行われるようにしてもよい。 Also, the on-off valves and the flow control valves provided in the etching processing apparatus 1 have been described as being controlled by the control unit 7, but may be manually operated by an operator. Then, the operator may manually operate to switch between the normal circulation and the bypass circulation.
　この発明は詳細に説明されたが、上記の説明は、すべての局面において、例示であって、この発明がそれに限定されるものではない。例示されていない無数の変形例が、この発明の範囲から外れることなく想定され得るものと解される。上記各実施形態および各変形例で説明した各構成は、相互に矛盾しない限り適宜組み合わせたり、省略したりすることができる。 Although the present invention has been described in detail, the above description is an example in all aspects, and the present invention is not limited thereto. It is understood that innumerable variants not illustrated can be envisaged without departing from the scope of the invention. The configurations described in the above-described embodiments and modified examples can be appropriately combined or omitted as long as they do not contradict each other.
　１　エッチング処理装置
　１００　基板液処理装置
　３４　処理槽
　３４１　内槽
　３４１Ｂ　底部
　３４１Ｐ　第１開口
　３４３　外槽
　３４３Ｐ　第２開口
　３６　基板昇降機構
　５０　第１配管
　５０１　濃度検出器
　５１　ポンプ
　５１１，５１３，５７，６１　開閉バルブ
　５２　ヒーター
　５３１　分岐部
　５５　バイパス配管
　５８　流量制御バルブ
　５９　流量検出器
　６０　第２配管
　６１　開閉バルブ
　７　制御部
　Ｓ１１　搬入工程
　Ｓ１２　浸漬工程
　Ｓ１３　搬出工程
　Ｔ１，Ｔ３　通常循環期間
　Ｔ２　バイパス循環期間
　Ｗ　基板 1 Etching processing apparatus 100 Substrate liquid processing apparatus 34 Processing tank 341 Inner tank 341B Bottom part 341P First opening 343 Outer tank 343P Second opening 36 Substrate lifting mechanism 50 First piping 501 Concentration detector 51 Pumps 511, 513, 57, 61 Open/close Valve 52 Heater 531 Branch part 55 Bypass pipe 58 Flow control valve 59 Flow detector 60 Second pipe 61 Open/close valve 7 Control part S11 Carry-in process S12 Dipping process S13 Carry-out process T1, T3 Normal circulation period T2 Bypass circulation period W Substrate

Claims (8)

  1. 　基板を処理する基板処理装置であって、
    　上部に第１開口を有する有底筒状の内槽と、
    　前記内槽の外周部に設けられ、上部に第２開口を有する有底筒状の外槽と、
    　前記内槽の内部と前記外槽の内部とを接続する第１配管と、
    　前記第１配管に設けられ、前記外槽から前記内槽へ向けて処理液を送るポンプと、
    　前記第１配管に設けられ、前記第１配管を通過する前記処理液を加熱するヒーターと、
    　前記第１配管における前記ヒーターと前記内槽との間の配管部と、前記外槽とを接続する第２配管と、
    　前記第２配管に設けられ、前記第２配管を通過する前記処理液の流量を変更する第２配管用バルブと、
    を備える、基板処理装置。     A substrate processing apparatus for processing a substrate, comprising:
    A bottomed cylindrical inner tank having a first opening at the top,
    A cylindrical outer tank having a bottom, which is provided on the outer peripheral portion of the inner tank and has a second opening in the upper portion;
    A first pipe connecting the inside of the inner tank and the inside of the outer tank;
    A pump which is provided in the first pipe and which sends a processing liquid from the outer tank to the inner tank;
    A heater provided in the first pipe for heating the processing liquid passing through the first pipe;
    A pipe portion between the heater and the inner tank in the first pipe, and a second pipe connecting the outer tank,
    A second pipe valve provided in the second pipe for changing the flow rate of the processing liquid passing through the second pipe;
    A substrate processing apparatus comprising:
  2. 　請求項１の基板処理装置であって、
    　前記第１配管の一端が前記内槽の底部に接続されている、基板処理装置。     The substrate processing apparatus according to claim 1, wherein
    The substrate processing apparatus, wherein one end of the first pipe is connected to the bottom of the inner tank.
  3. 　請求項１または請求項２の基板処理装置であって、
    　前記第１配管における前記ヒーターと前記内槽との間に設けられ、前記第１配管を通過する前記処理液の流量を変更する第１配管用バルブ、
    をさらに備え、
    　前記第１配管用バルブが、
    　前記第１配管における前記第２配管につながる部分と前記内槽との間に設けられている、基板処理装置。     The substrate processing apparatus according to claim 1 or 2, wherein
    A valve for a first pipe, which is provided between the heater and the inner tank in the first pipe, and which changes a flow rate of the processing liquid passing through the first pipe;
    Further equipped with,
    The first piping valve,
    A substrate processing apparatus provided between a portion of the first pipe connected to the second pipe and the inner tank.
  4. 　請求項３の基板処理装置であって、
    　前記第１配管用バルブおよび前記第２配管用バルブに接続され、前記第１配管用バルブおよび前記第２配管用バルブを制御する制御部、
    をさらに備える、基板処理装置。     The substrate processing apparatus according to claim 3, wherein
    A controller connected to the first piping valve and the second piping valve, for controlling the first piping valve and the second piping valve,
    A substrate processing apparatus further comprising:
  5. 　請求項４の基板処理装置であって、
    　前記制御部は、
    　前記第１配管用バルブを開放し、かつ前記第２配管用バルブを閉鎖する第１循環制御処理と、
    　前記第１配管用バルブ、および前記第２配管用バルブを開放する第２循環制御処理と、
    を実行する、基板処理装置。     The substrate processing apparatus according to claim 4, wherein
    The control unit is
    A first circulation control process of opening the first pipe valve and closing the second pipe valve;
    A second circulation control process for opening the first piping valve and the second piping valve;
    A substrate processing apparatus for performing the.
  6. 　請求項３から請求項５のいずれか１項の基板処理装置であって、
    　前記第１配管は、前記第１配管における前記ヒーターと前記第１配管用バルブとの間の分岐部から分岐して前記内槽につながるバイパス配管、を含み、
    　前記バイパス配管に設けられ、前記バイパス配管を通過する前記処理液の流量を変更するバイパス配管用バルブ、をさらに備え、
    　前記第２配管が、前記バイパス配管における前記分岐部と前記バイパス配管用バルブとの間に接続されている、基板処理装置。     The substrate processing apparatus according to any one of claims 3 to 5, wherein
    The first pipe includes a bypass pipe branched from a branch portion between the heater and the first pipe valve in the first pipe and connected to the inner tank,
    A valve for bypass piping, which is provided in the bypass piping and changes the flow rate of the processing liquid passing through the bypass piping,
    The substrate processing apparatus, wherein the second pipe is connected between the branch portion of the bypass pipe and the bypass pipe valve.
  7. 　請求項１から請求項６のいずれか１項の基板処理装置であって、
    　前記第２配管が前記第２開口を通って前記外槽の内部に接続されている、基板処理装置。     The substrate processing apparatus according to any one of claims 1 to 6, wherein:
    The substrate processing apparatus, wherein the second pipe is connected to the inside of the outer tank through the second opening.
  8. 　請求項１から請求項７のいずれか１項の基板処理装置で基板を処理する基板処理方法であって、
    ａ）　基板を前記内槽に貯留された前記処理液に浸漬すること、
    ｂ）　前記工程ａ）において、前記第１配管を通過する前記処理液を前記内槽に戻すとともに、前記第１配管を通過する前記処理液を前記第２配管を通じて前記外槽に戻すこと、
    ｃ）　前記工程ｂ）において、前記第１配管を通過する前記処理液を加熱すること、
    を含む、基板処理方法。     A substrate processing method for processing a substrate with the substrate processing apparatus according to claim 1.
    a) dipping the substrate in the treatment liquid stored in the inner tank,
    b) In the step a), returning the processing liquid passing through the first pipe to the inner tank, and returning the processing liquid passing through the first pipe to the outer tank through the second pipe,
    c) heating the treatment liquid passing through the first pipe in the step b),
    And a substrate processing method.
PCT/JP2019/047902 2018-12-17 2019-12-06 Substrate processing apparatus and substrate processing method WO2020129713A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115921410A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Cleaning system and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206419A (en) * 2008-02-29 2009-09-10 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP2016178151A (en) * 2015-03-19 2016-10-06 東京エレクトロン株式会社 Device for liquid processing of substrate, method for liquid processing of substrate, and computer-readable storage medium with program for liquid processing of substrate stored therein

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3768802B2 (en) * 1999-11-01 2006-04-19 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
CN1499179A (en) * 2002-11-05 2004-05-26 矽统科技股份有限公司 Chemical treating tank with indicator for liquid level in outer trough
JP4381947B2 (en) * 2004-10-04 2009-12-09 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
CN101122024A (en) * 2006-05-18 2008-02-13 住友精密工业株式会社 Processing device for processing fluid and substrate processing device having the same
JP4762822B2 (en) * 2006-08-03 2011-08-31 東京エレクトロン株式会社 Chemical liquid mixing method and chemical liquid mixing apparatus
JP5529634B2 (en) * 2010-06-10 2014-06-25 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, and substrate manufacturing method
JP5829444B2 (en) 2011-07-08 2015-12-09 株式会社Ｓｃｒｅｅｎホールディングス Phosphoric acid regeneration method, phosphoric acid regeneration apparatus and substrate processing system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206419A (en) * 2008-02-29 2009-09-10 Dainippon Screen Mfg Co Ltd Substrate processing apparatus and substrate processing method
JP2016178151A (en) * 2015-03-19 2016-10-06 東京エレクトロン株式会社 Device for liquid processing of substrate, method for liquid processing of substrate, and computer-readable storage medium with program for liquid processing of substrate stored therein

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115921410A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Cleaning system and method

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