CN113169065A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN113169065A
CN113169065A CN201980079317.XA CN201980079317A CN113169065A CN 113169065 A CN113169065 A CN 113169065A CN 201980079317 A CN201980079317 A CN 201980079317A CN 113169065 A CN113169065 A CN 113169065A
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China
Prior art keywords
pipe
substrate
phosphoric acid
inner tank
aqueous solution
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CN201980079317.XA
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Chinese (zh)
Inventor
杉冈真治
岸田拓也
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)

Abstract

The disclosed device is provided with: an inner tank (341); an outer groove (343) provided on the outer peripheral portion of the inner groove (341); a 1 st pipe (50) connecting the inner tank (341) and the outer tank (343); a heater (52) for heating the phosphoric acid aqueous solution passing through the 1 st pipe (50); an opening/closing valve (513) provided between the heater (52) and the inner tank (341) in the 1 st pipe (50); a 2 nd pipe (60) connecting a pipe portion between the heater (52) and the inner tank (341) in the 1 st pipe (50) to the outer tank (343); and an on-off valve (61) provided in the 2 nd pipe (60).

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method. In particular, the present invention relates to a technique for treating a substrate by immersing the substrate in a treatment liquid stored in a tank. Examples of the substrate to be processed include a semiconductor substrate, a substrate for fpd (flat Panel display) such as a liquid crystal display device and an organic EL (Electroluminescence) display device, a substrate for optical disk, a substrate for magnetic disk, a substrate for optical disk, a substrate for photomask, a ceramic substrate, a substrate for solar cell, and a printed circuit board.
Background
In the manufacturing process of a semiconductor device, a so-called wet etching is performed in which a silicon nitride film formed on the surface of a substrate is etched by immersing a semiconductor wafer in an aqueous phosphoric acid solution stored in a processing bath. A substrate processing apparatus for performing such wet etching is described in patent document 1, for example.
The substrate processing apparatus of patent document 1 includes an inner tank for storing a phosphoric acid aqueous solution into which a substrate is immersed, an outer tank for collecting the phosphoric acid aqueous solution overflowing from an upper portion of the inner tank, and a circulation pipe for connecting the outer tank and the inner tank. The circulation pipe is provided with a circulation pump, a heater, and a filter. The circulation pipe heats and filters the phosphoric acid aqueous solution drawn out from the outer tank and returns the phosphoric acid aqueous solution to the inner tank. By providing the circulation pipe, the temperature of the phosphoric acid aqueous solution in the inner tank in which the substrate is immersed is maintained at a desired temperature, and foreign matters precipitated by etching are filtered.
Documents of the prior art
Patent document
Patent document 1: JP patent application publication No. 2013-021066
Disclosure of Invention
However, in the case of the prior art, by returning the phosphoric acid aqueous solution to the inner tank, there is a possibility that unevenness in the flow of the phosphoric acid aqueous solution is generated in the inner tank. If an uneven flow occurs in the inner tank as described above, there is a possibility that the concentration of phosphoric acid in the phosphoric acid aqueous solution or the concentration of silicon melted out from the substrate varies, and thus the etching amount of the substrate may vary in the plane.
Accordingly, an object of the present invention is to provide a technique for reducing in-plane variations in substrate processing in a processing bath.
In order to solve the above problem, the 1 st aspect is a substrate processing apparatus for processing a substrate, comprising: a bottomed cylindrical inner tank having a 1 st opening at an upper portion thereof; a bottomed cylindrical outer tank provided at an outer peripheral portion of the inner tank and having a 2 nd opening at an upper portion thereof; a 1 st pipe connecting the inside of the inner tank and the inside of the outer tank; a pump provided in the 1 st pipe and configured to supply the processing liquid from the outer tank to the inner tank; a heater provided in the 1 st pipe and configured to heat the treatment liquid passing through the 1 st pipe; a 2 nd pipe connecting a pipe portion between the heater and the inner tank and the outer tank in the 1 st pipe; and a 2 nd pipe valve provided in the 2 nd pipe and configured to change a flow rate of the treatment liquid passing through the 2 nd pipe.
The 2 nd aspect is the substrate processing apparatus according to the 1 st aspect, wherein one end of the 1 st pipe is connected to a bottom portion of the inner tank.
The 3 rd aspect is the substrate processing apparatus according to the 1 st or 2 nd aspect, further comprising a 1 st pipe valve provided between the heater and the inner tank in the 1 st pipe to change a flow rate of the processing liquid passing through the 1 st pipe, the 1 st pipe valve being provided between a portion of the 1 st pipe connected to the 2 nd pipe and the inner tank.
The 4 th aspect is the substrate processing apparatus according to the 3 rd aspect, further comprising a control unit connected to the 1 st pipe valve and the 2 nd pipe valve to control the 1 st pipe valve and the 2 nd pipe valve.
The 5 th aspect is the substrate processing apparatus according to the 4 th aspect, wherein the control unit executes the following processing: a 1 st cycle control process of opening the 1 st pipe valve and closing the 2 nd pipe valve; and a 2 nd circulation control process of opening the 1 st pipe valve and the 2 nd pipe valve.
The 6 th aspect is the substrate processing apparatus according to any one of the 3 rd to 5 th aspects, wherein the 1 st pipe includes a bypass pipe that branches off from a branch portion between the heater and the 1 st pipe valve in the 1 st pipe and is connected to the inner tank, and further includes a bypass pipe valve that is provided in the bypass pipe and changes a flow rate of the processing liquid passing through the bypass pipe, and the 2 nd pipe is connected between the branch portion and the bypass pipe valve in the bypass pipe.
The 7 th aspect is the substrate processing apparatus according to any one of the 1 st to 6 th aspects, wherein the 2 nd pipe passes through the 2 nd opening and is connected to an inside of the outer tank.
The 8 th aspect is a substrate processing method for processing a substrate by the substrate processing apparatus according to any one of the 1 st to 7 th aspects, the substrate processing method including: a) a step of immersing the substrate in the processing liquid stored in the inner tank; b) a step of returning the treatment liquid passing through the 1 st pipe to the inner tank and returning the treatment liquid passing through the 1 st pipe to the outer tank via the 2 nd pipe in the step a); and c) heating the treatment solution passing through the 1 st pipe in the step b).
Effects of the invention
According to the substrate processing apparatus of claim 1, the circulating flow in which the processing liquid overflowing from the inner tank and moving to the outer tank is returned to the inner tank by the 1 st pipe can be formed. Further, by opening the 2 nd pipe valve, the treatment liquid can be moved from the 1 st pipe to the 2 nd pipe and returned to the outer tank. This reduces the amount of the processing liquid returned to the inner tank, and therefore reduces the flow of the processing liquid in the inner tank. Therefore, the in-plane variation in substrate processing can be reduced.
According to the substrate processing apparatus of claim 2, the processing liquid can be returned like the bottom of the inner tank. This reduces the flow of the processing liquid in the inner tank by the circulation of the processing liquid.
According to the substrate processing apparatus of claim 3, the flow of the processing liquid from the 1 st pipe to the inner tank and the flow of the processing liquid from the 1 st pipe to the 2 nd pipe can be controlled by the 1 st pipe valve.
According to the substrate processing apparatus of claim 4, the control unit can control the operation of the 1 st pipe valve and the 2 nd pipe valve.
According to the substrate processing apparatus of claim 5, the control unit executes the 1 st circulation control process, thereby moving the processing liquid from the outer tank to the inner tank via the 1 st pipe. Further, by the control unit executing the 2 nd circulation control process, the processing liquid can be moved from the outer tank to the inner tank through the 1 st pipe, and the processing liquid can be moved from the outer tank to the outer tank through the 2 nd pipe branched and extended from the 1 st pipe and the 1 st pipe. Therefore, the amount of the processing liquid transferred from the outer tank to the inner tank can be reduced.
According to the substrate processing apparatus of claim 6, by closing the 1 st pipe valve and opening the 2 nd pipe valve and the bypass pipe valve, a part of the processing liquid returned to the inner tank can be moved to the 2 nd pipe and introduced into the outer tank. This can reduce the amount of the processing liquid flowing into the inner tank.
According to the substrate processing apparatus of claim 7, the processing liquid can be returned from the upper side of the outer tank by the 2 nd pipe.
According to the substrate processing method of claim 8, the circulating flow in which the processing liquid overflowing from the inner tank and moving to the outer tank is returned to the inner tank by the 1 st pipe can be formed. Further, by opening the 2 nd pipe valve, the treatment liquid can be moved from the 1 st pipe to the 2 nd pipe and returned to the outer tank. This reduces the amount of the processing liquid returned to the inner tank, and therefore reduces the flow of the processing liquid in the inner tank. Therefore, the in-plane variation in substrate processing can be reduced.
Drawings
Fig. 1 is a diagram illustrating a substrate liquid processing apparatus 100 according to an embodiment.
Fig. 2 is a diagram schematically showing the structure of the etching apparatus 1.
Fig. 3 is a timing chart for explaining the operation states of the respective elements during the etching process in the etching apparatus 1.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings. Note that the components described in the present embodiment are merely exemplary, and the scope of the present invention is not intended to be limited to these components. In the drawings, the size and number of portions are exaggerated or simplified as necessary for easy understanding.
In the present application, expressions showing relative or absolute positional relationships (for example, "in one direction", "along one direction", "parallel", "orthogonal", "central", "concentric", "coaxial", etc.) mean not only the positional relationships thereof but also states in which angles or distances are relatively changed within a range of tolerance or a function of obtaining the same degree, unless otherwise specified. The expression "equal state" (for example, "same", "equal", "homogeneous", etc.) means not only a quantitative and strictly equal state but also a state in which a tolerance or a difference in function to the same degree is obtained, unless otherwise specified. The expression indicating the shape (for example, "quadrangular shape" or "cylindrical shape") indicates not only the shape geometrically strictly but also a shape having, for example, irregularities, chamfers, or the like within a range in which an equivalent effect can be obtained, unless otherwise specified. The expression "having", "including", "provided with", "including" or "containing" one constituent element is not an exclusive expression excluding the presence of other constituent elements. "on" includes, unless otherwise specified, a case where two elements are in contact with each other and a case where two elements are separated from each other.
< embodiment >
Fig. 1 is a diagram illustrating a substrate liquid processing apparatus 100 (substrate processing apparatus) according to an embodiment. In fig. 1, an XYZ rectangular coordinate system is defined to explain the positional relationship of each element. The X axis and the Y axis are parallel to the horizontal plane, and the Z axis is parallel to the vertical direction. In fig. 1, one direction in which the tip of the arrow is directed is a plus (positive) direction, and the opposite direction is a minus (negative) direction.
The substrate liquid processing apparatus 100 includes a carrier loading/unloading unit 2, a batch forming unit 3, a batch placing unit 4, a batch transfer unit 5, a batch processing unit 6, and a control unit 7. The carrier carry-in/out section 2 carries in and out carriers 9 that accommodate a plurality of (e.g., 25) silicon wafers W arranged vertically (Z-axis direction) in a horizontal posture (posture in which both principal surfaces of the substrates W are parallel to a horizontal plane).
The carrier loading/unloading unit 2 is provided with a carrier table 10, a carrier transfer mechanism 11, carrier stockers 12 and 13, and a carrier table 14. A plurality of carriers 9 are placed on the carrier table 10 in the Y-axis direction. The carrier transport mechanism 11 transports the carrier 9. The carrier stores 12, 13 temporarily accommodate one carrier 9. The carrier 9 is placed on the carrier placement table 14. The carrier stocker 12 temporarily stores the substrates W before the substrates W to be processed into products are processed by the batch processing unit 6. The carrier stocker 13 temporarily stores the substrates W after the substrates W to be processed are processed by the batch processing unit 6.
The carrier loading/unloading section 2 transports the carrier 9, which is loaded from the outside onto the carrier stage 10, to the carrier stocker 12 or the carrier mounting table 14 by the carrier transport mechanism 11. The carrier loading/unloading unit 2 transports the carrier 9 placed on the carrier placement table 14 to the carrier stocker 13 or the carrier table 10 by the carrier transport mechanism 11. The carrier 9 conveyed to the carrier stage 10 is carried out to the outside.
The lot forming unit 3 forms a lot of a number of substrates W (for example, 50) which are combined and accommodated in the one or more carriers 9 and are processed at the same time. The batch forming unit 3 may be configured to face the surfaces of the substrates W on which the patterns are formed, to each other when forming the batch. In the batch formation, the batch formation unit 3 may be configured to face all the pattern formation surfaces of the substrates W toward one side.
The batch forming unit 3 is provided with a substrate transfer mechanism 15 for simultaneously transferring a plurality of substrates W. The substrate transfer mechanism 15 has a mechanism for changing the posture of the substrate W from the horizontal posture to the vertical posture (posture in which both main surfaces of the substrate W are parallel to a vertical plane) and from the vertical posture to the horizontal posture during the transfer of the substrate W.
The lot forming unit 3 uses the substrate transfer mechanism 15 to transfer the substrates W from the carrier 9 mounted on the carrier mounting table 14 to the lot mounting unit 4, and mounts the substrates W forming a lot on the lot mounting unit 4. The lot forming unit 3 transports the lot placed on the lot placing unit 4 to the carrier 9 placed on the carrier placing table 14 by the substrate transport mechanism 15. The substrate transfer mechanism 15 includes, as substrate support portions for supporting a plurality of substrates W, a 1 st substrate support portion for supporting the substrate W before processing (before transfer by the batch transfer unit 5) and a 2 nd substrate support portion for supporting the substrate W after processing (after transfer by the batch transfer unit 5). By providing the 1 st and 2 nd substrate support portions, particles and the like detached from the substrate W before processing can be prevented from adhering to the substrate W after processing.
The batch mounting unit 4 includes a batch mounting table 16, and the batch mounting table 16 is used for temporarily mounting the batch that the batch conveying unit 5 conveys between the batch forming unit 3 and the batch processing unit 6. The lot loading unit 4 is provided with a loading-side lot loading table 17 on which a lot before processing (before being transported by the lot transporting unit 5) is loaded, and a unloading-side lot loading table 18 on which a lot after processing (after being transported by the lot transporting unit 5) is loaded. A plurality of substrates W in 1 lot are placed on the tables 17 and 18 in a vertical posture in the Y-axis direction.
In the lot loading unit 4, the lot formed by the lot forming unit 3 is loaded on the loading-side lot loading table 17, and the lot is loaded into the lot processing unit 6 by the lot transport unit 5. In the lot loading unit 4, the lot unloaded from the lot processing unit 6 by the lot conveying unit 5 is loaded on the unloading-side lot loading table 18, and the lot is conveyed to the lot forming unit 3.
The batch transport unit 5 transports the batch between the batch loading unit 4 and the batch processing unit 6 or inside the batch processing unit 6. The batch transport unit 5 is provided with a batch transport mechanism 19 for transporting a batch. The batch transfer mechanism 19 includes a rail 20 disposed along the batch loading unit 4 and the batch processing unit 6, a moving body 21 that moves along the rail 20 while holding a plurality of substrates W, and a motor that moves the moving body 21. The moving body 21 is provided with a substrate holder 22 for holding a plurality of substrates W arranged in front and rear in a vertical posture. The moving body 21 has a mechanism including a motor or the like for moving the substrate holder 22 forward and backward in the Y-axis direction.
The batch processing unit 6 performs processes such as etching, cleaning, and drying on a plurality of substrates W aligned in the Y-axis direction in a vertical posture, as 1 batch. In the batch processing section 6, a drying processing apparatus 23, a substrate holder cleaning processing apparatus 24, a cleaning processing apparatus 25, and a plurality of (two in this example) etching processing apparatuses 1 are arranged in this order in the + X direction.
The drying apparatus 23 includes a processing bath 27 and a substrate lifting mechanism 28 provided in the processing bath 27 so as to be vertically movable. A drying process gas (isopropyl alcohol (IPA), etc.) is supplied to the process tank 27. A plurality of substrates W of 1 lot are held in a vertical posture in tandem by the substrate lift mechanism 28. The drying apparatus 23 receives a batch from the substrate holder 22 of the batch transport mechanism 19 by the substrate lift mechanism 28, and performs a drying process on the substrate W by the process gas for drying supplied to the process tank 27 by lifting and lowering the batch by the substrate lift mechanism 28. The drying apparatus 23 delivers the lot from the substrate lifting mechanism 28 to the substrate holder 22 of the lot transport mechanism 19.
The substrate holder cleaning apparatus 24 includes a processing bath 29, and a supply mechanism for supplying a cleaning processing liquid and a dry gas to the processing bath 29. The substrate holder cleaning apparatus 24 supplies a cleaning liquid to the substrate holder 22 of the batch transfer mechanism 19, and then supplies a dry gas to perform a cleaning process on the substrate holder 22.
The cleaning apparatus 25 performs a cleaning process on the substrate W. The cleaning apparatus 25 includes a cleaning processing tank 30 and a rinsing processing tank 31, and substrate elevating mechanisms 32 and 33 are provided in the respective processing tanks 30 and 31 so as to be capable of elevating and lowering. The cleaning treatment tank 30 stores a cleaning treatment liquid (SC-1 (aqueous ammonia peroxide solution), etc.). The processing bath 31 for rinsing stores a processing solution (such as purified water) for rinsing.
Each etching apparatus 1 performs an etching process on the substrate W. The etching apparatus 1 includes an etching processing bath 34 and a rinsing processing bath 35. Substrate lifting mechanisms 36 and 37 are provided in the respective processing tanks 34 and 35. The etching treatment tank 34 can store therein a treatment liquid (phosphoric acid aqueous solution) for etching. The processing bath 35 for rinsing can store therein a processing liquid (purified water or the like) for rinsing.
The cleaning apparatus 25 and the etching apparatus 1 have the same configuration, for example. In the etching processing apparatus 1, the substrate lifting mechanism 36 holds a plurality of substrates W in a batch while being arranged in a vertical posture in tandem. In the etching processing apparatus 1, the substrate elevating mechanism 36 receives a batch from the substrate holder 22 of the batch transfer mechanism 19. Then, the batch is lowered by the substrate lifting mechanism 36, and immersed in the etching treatment liquid in the treatment tank 34. Thereby, the etching process of the substrate W is performed. After the etching process, the substrate lifting mechanism 36 lifts the lot and delivers the lot to the substrate holder 22. Thereafter, the substrate elevating mechanism 37 receives the lot from the substrate holder 22. Then, the batch is lowered by the substrate elevating mechanism 37, and immersed in the processing liquid for rinsing in the processing bath 35. Thereby, the rinsing process of the substrate W is performed. After the rinsing process, the substrate lifting mechanism 37 lifts the lot and delivers the lot to the substrate holder 22.
The controller 7 is connected to each part (the carrier loading/unloading part 2, the batch forming part 3, the batch placing part 4, the batch transfer part 5, the batch processing part 6, and the etching processing apparatus 1) of the substrate liquid processing apparatus 100, and controls these operations. The hard disk of the control unit 7 is configured, for example, in the same manner as a normal computer. That is, the control unit 7 includes a CPU (processor), a ROM, a RAM (memory), and a fixed disk. The CPU includes an arithmetic circuit that performs various arithmetic processes. The ROM stores a basic program. The RAM is a volatile main storage device that stores various kinds of information. The fixed disk is an auxiliary storage device that stores programs or data and the like that can execute the CPU. The CPU, ROM, RAM, and fixed disk are connected together by a bus.
The control unit is connected to a display unit for displaying images and an operation unit including a keyboard, a mouse, and the like. The display unit may be constituted by a touch panel, and in this case, the display unit also functions as an operation unit. The reading device and the communication unit may be connected to a bus of the control unit. The reading device reads information from a computer-readable non-transitory recording medium such as an optical disk, a magnetic disk, or an opto-magnetic disk. The communication unit can perform information communication with another computer (server or the like) in the control unit 7. The program is supplied to the control section 7 by reading the recording medium in which the program is recorded by the reading device. Further, the program may be supplied to the control section 7 via the communication section.
Fig. 2 is a diagram schematically showing the structure of the etching apparatus 1. The etching apparatus 1 includes the treatment tank 34 for storing a phosphoric acid aqueous solution having a predetermined concentration as a treatment liquid. The processing bath 34 has an inner bath 341 and an outer bath 343. The inner tank 341 is formed in a bottomed cylindrical shape having a 1 st opening 341P formed by an upper edge. The outer groove 343 is provided in the outer peripheral portion of the inner groove 341 and is formed in a bottomed cylindrical shape having a 2 nd opening 343P formed by an upper edge. The outer groove 343 is formed in an annular shape surrounding the entire outer peripheral portion of the inner groove 341. If the inner tank 341 is filled with the phosphoric acid aqueous solution, the remaining phosphoric acid aqueous solution overflows from the 1 st opening 341P. Then, the overflowed phosphoric acid aqueous solution flows into the inner part of the outer tank 343 through the 2 nd opening 343P.
One end of the 1 st pipe 50 is connected to the inside of the outer tank 343. In this example, one end of the 1 st pipe 50 extends downward from above the outer tank 343 through the 2 nd opening 343P and extends inside the outer tank 343. That is, the opening at one end of the 1 st pipe 50 is located below the 2 nd opening 343P. The other end of the 1 st pipe 50 is connected to the inside of the inner tank 341. In this example, the other end of the 1 st pipe 50 is connected to the bottom 341B of the inner tank 341 (the bottom surface of the inner tank 341 in the depth direction). The 1 st pipe 50 is provided with a concentration detector 501, a pump 51, an on-off valve 511, a heater 52, a filter 53, and an on-off valve 513 in this order from the upstream side (outer tank 343 side).
The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution passing through the 1 st pipe 50. The concentration detector 501 measures, for example, the absorbance of light of a specific wavelength of the phosphoric acid aqueous solution, thereby detecting the phosphoric acid concentration in the phosphoric acid aqueous solution. The concentration detector 501 detects the concentration of phosphoric acid in the phosphoric acid aqueous solution discharged from the outer tank 343. The concentration detector 501 is connected to the control unit 7, and transmits a detection signal corresponding to the detected phosphoric acid concentration to the control unit 7.
The pump 51 discharges the phosphoric acid aqueous solution from the inside of the outer tank 343 through the 1 st pipe 50 and feeds the phosphoric acid aqueous solution to the inside of the inner tank 341. The heater 52 heats the phosphoric acid aqueous solution passing through the 1 st pipe 50. The filter 53 filters the phosphoric acid aqueous solution passing through the 1 st pipe 50. The phosphoric acid aqueous solution discharged from the outer tank 343 is moved to the inner tank 341 by the driving of the pump 51. Then, the phosphoric acid aqueous solution overflowing the inner tank 341 flows out to the outer tank 343 again. In this manner, a circulating flow of the phosphoric acid aqueous solution is formed in the etching treatment apparatus 1.
The opening/closing valves 511 and 513 are, for example, electrically or electromagnetically operated valves, and perform conduction/interruption control of the flow of the processing liquid in the 1 st pipe 50. The "control of blocking the flow" means controlling the flow of the treatment liquid in the pipe between two states, i.e., a state in which the flow is possible and a state in which the flow is not possible. The opening/closing valves 511 and 513 are connected to the control unit 7, and the opening/closing operation is controlled by the control unit 7.
As shown in fig. 2, the substrate lifting mechanism 36 includes a holder (not shown) that holds a plurality of substrates W arranged in a vertically upright posture at intervals in the horizontal direction. The substrate lifting mechanism 36 includes a lifting motor (not shown) that lifts and lowers between an upper position Pos1 and a lower position Pos2 in a state where the substrates W are held by the holder.
The 1 st pipe 50 includes a bypass pipe 55. In this example, one end of the bypass pipe 55 is connected to a branch portion 531 of the pipe portion between the filter 53 and the opening/closing valve 513 (1 st pipe valve) in the 1 st pipe 50. The other end of the bypass pipe 55 is connected to a connection portion 533 between the opening/closing valve 513 and the inner tank 341 in the 1 st pipe 50. That is, the bypass pipe 55 branches from the branch portion 531 between the heater 52 and the on-off valve 513 in the 1 st pipe 50, and is connected to the inner tank 341. The other end of the bypass pipe 55 may be directly connected to the inner tank 341 (e.g., the bottom 341B).
An opening/closing valve 57, a flow rate control valve 58, and a flow rate detector 59 are provided in this order on the upstream side (branching portion 531 side) of the bypass pipe 55 of the 1 st pipe 50. The opening/closing valve 57 and the flow rate control valve 58 are connected to the control unit 7, and operate in accordance with a control signal from the control unit 7. The opening/closing valve 57 controls the flow of the phosphoric acid aqueous solution flowing through the bypass pipe 55 to be blocked, and the flow control valve 58 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55. The term "adjusting the flow rate" means changing the flow rate of the treatment liquid in a state where at least the treatment liquid is circulated. An electric throttle valve is used as the flow rate control valve 58, for example. The flow rate detector 59 detects the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55. The flow rate detector 59 is connected to the control unit 7, and transmits a detection signal corresponding to the detected flow rate to the control unit 7. As the flow rate detector 59, for example, an ultrasonic flow meter that detects a flow rate in a pipe using ultrasonic waves from outside the pipe can be used.
The etching apparatus 1 includes a 2 nd pipe 60. The 2 nd pipe 60 constitutes a pipe path connecting the 1 st pipe 50 and the outer tank 343. In this example, one end of the 2 nd pipe 60 is connected to a path of the bypass pipe 55 as a part of the 1 st pipe 50. More specifically, one end of the 2 nd pipe 60 is connected to a pipe portion between the opening/closing valve 57 and the branch portion 531 in the bypass pipe 55 of the 1 st pipe 50 via the connection portion 601. The other end of the 2 nd pipe 60 is connected to the inside of the outer tank 343. In this example, the other end of the 2 nd pipe 60 extends downward from above the outer tank 343 through the 2 nd opening 343P and extends inside the outer tank 343.
An on-off valve 61 is provided in the path of the 2 nd pipe 60. The opening/closing valve 61 is connected to the control unit 7, and controls conduction/interruption of the flow of the phosphoric acid aqueous solution in the 2 nd pipe 60 in accordance with a control signal from the control unit 7.
In this example, the control unit 7 performs the 1 st cycle control process of opening the on-off valves 511 and 513 and closing the on-off valves 57 and 61. In the 1 st cycle control process, the same amount of phosphoric acid aqueous solution as that discharged from the outer tank 343 is returned to the inner tank 341.
In this example, the control unit 7 performs the 2 nd cycle control process of opening the on-off valves 511, 57, and 61 and closing the on-off valve 513. In the 2 nd cycle control process, a part of the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341 through the bypass pipe 55 of the 1 st pipe 50, and the remainder is returned to the outer tank 343 through the 2 nd pipe 60. More specifically, by closing the opening/closing valve 513, the phosphoric acid treatment solution discharged from the outer tank 343 through the 1 st pipe 50 is introduced into the bypass pipe 55 through the branch portion 531. A part of the phosphoric acid aqueous solution introduced into the bypass pipe 55 flows from the bypass pipe 55 into the 2 nd pipe 60 via the connection portion 601 and is introduced into the outer tank 343. The remaining phosphoric acid aqueous solution is introduced into the inner tank 341 through the bypass pipe 55 and the connection portion 533.
In this manner, in the 1 st or 2 nd cycle control process by the control unit 7, the on-off valve 513 functions as a 1 st pipe valve that changes the flow rate of the processing liquid passing through the 1 st pipe 50. The on-off valve 61 functions as a 2 nd pipe valve that changes the flow rate of the processing liquid passing through the 2 nd pipe 60. The opening/closing valve 57 or the flow rate control valve 58 functions as a bypass pipe valve that changes the flow rate of the processing liquid flowing through the bypass pipe 55. The term "change of the flow rate" is a concept including not only a case where the flow of the liquid is controlled by the on-off valve to be blocked from flowing but also a case where the flow rate is adjusted by the flow rate adjusting valve.
When the control unit 7 performs the 2 nd cycle control process, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be adjusted by controlling the flow rate control valve 58 in accordance with the detection result of the flow rate detector 59. That is, the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be increased by increasing the opening of the flow control valve 58, and the flow rate of the phosphoric acid aqueous solution returned to the inner tank 341 can be decreased by decreasing the opening of the flow control valve 58.
The flow rate control valve 58 may be used to control the flow of the phosphoric acid aqueous solution through the bypass pipe 55. In this case, the opening/closing valve 57 may be omitted. In addition, the flow control valve 58 is not necessarily provided. When the flow control valve 58 is omitted, the flow of the phosphoric acid aqueous solution is controlled to be blocked by the on-off valve 57 without adjusting the flow rate of the phosphoric acid aqueous solution flowing through the bypass pipe 55. The bypass pipe 55 is not necessarily provided, and may be omitted. When the bypass pipe 55 is omitted, one end (the connection portion 601) of the 2 nd pipe 60 may be directly connected between the heater 52 and the inner tank 341 (e.g., the position of the branch portion 531) in the 1 st pipe 50, for example. In this case, when the circulating flow is formed in the 1 st pipe 50, a part of the phosphoric acid aqueous solution in the 1 st pipe 50 flows into the 2 nd pipe 60 by opening the on-off valve 61 and is sent to the outer tank 343. This can reduce the amount of the phosphoric acid aqueous solution returned to the inner tank 341 through the 1 st pipe 50.
The etching apparatus 1 includes a phosphoric acid aqueous solution supply unit 40. The phosphoric acid aqueous solution supply unit 40 supplies a phosphoric acid aqueous solution having a predetermined concentration to the outer tank 343. The phosphoric acid aqueous solution supply unit 40 may supply the phosphoric acid aqueous solution to a predetermined portion of the inner tank 341 or the 1 st pipe 50. The phosphoric acid aqueous solution supply unit 40 includes a supply source having a tank or the like for storing a phosphoric acid aqueous solution, and a supply pipe 401 for connecting the supply source to the outer tank 343. The supply pipe 401 is provided with a flow rate detector 403, a flow rate control valve 405, and an on-off valve 407 in this order from the upstream side (supply source side). The flow rate detector 403 detects the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401. The flow control valve 405 adjusts the flow rate of the phosphoric acid aqueous solution flowing through the supply pipe 401. The opening/closing valve 417 controls the flow of the phosphoric acid aqueous solution in the supply pipe 401 to be blocked.
The flow rate detector 403, the flow rate control valve 405, and the on-off valve 407 are connected to the controller 7. The control unit 7 controls the flow rate control valve 405 based on a signal indicating the flow rate sent from the flow rate detector 403. Thereby, the phosphoric acid aqueous solution supply part 40 supplies the phosphoric acid aqueous solution to the outer tank 343 at a controlled flow rate.
The substrate liquid processing apparatus 100 includes a purified water supply unit 41. The purified water supply part 41 supplies purified water to the outer tank 343. The purified water supply unit 41 may supply purified water to a predetermined portion of the inner tank 341 or the 1 st pipe 50. For example, pure water is supplied to replenish the water evaporated by heating the phosphoric acid aqueous solution. The purified water supply unit 41 includes a supply source for supplying purified water at a predetermined temperature, and a supply pipe 411 for connecting the supply source to the outer tank 343. The supply pipe 411 is provided with a flow rate detector 413, a flow rate control valve 415, and an opening/closing valve 417 in this order from the upstream side (supply source side). The flow rate detector 413 detects the flow rate of the purified water flowing through the supply pipe 411. The flow control valve 415 adjusts the flow rate of the purified water flowing through the supply pipe 411. The opening/closing valve 417 controls the flow of the purified water in the supply pipe 411 to be blocked.
The flow rate detector 413, the flow rate control valve 415, and the opening/closing valve 417 are connected to the control unit 7. The control unit 7 controls the flow rate control valve 415 based on a signal indicating the flow rate transmitted from the flow rate detector 413. Thus, the purified water supply part 41 supplies purified water to the outer tank 343 at a controlled flow rate.
The etching apparatus 1 includes a silicon supply unit 42. The silicon supply section 42 supplies a silicon aqueous solution (e.g., hexafluorosilicic acid aqueous solution (H)2SiF6+H2O)) to the outer tank 343. The silicon supply unit 42 may supply the silicon aqueous solution to a predetermined portion of the inner tank 341 or the 1 st pipe 50. The silicon supply unit 42 includes a supply source for supplying the silicon aqueous solution, and a supply pipe 421 for connecting the supply source to the outer tank 343. The supply pipe 421 is provided with a flow rate detector 423, a flow rate control valve 425, and an opening/closing valve 427 in this order from the upstream side (supply side). The flow rate detector 423 detects the flow rate of the aqueous silicon solution flowing through the supply pipe 421. The flow control valve 425 adjusts the flow rate of the aqueous silicon solution flowing through the supply pipe 421. The opening/closing valve 427 controls the flow of the silicon aqueous solution in the supply pipe 421 to be blocked.
The flow rate detector 423, the flow rate control valve 425, and the opening/closing valve 427 are connected to the controller 7. The control unit 7 controls the flow rate control valve 425 based on a signal indicating the flow rate transmitted from the flow rate detector 423. Thereby, the silicon supply part 42 supplies silicon to the outer tank 343 at a controlled flow rate.
A waste pipe 90 is connected to a pipe portion of the 1 st pipe 50 connecting the heater 52 and the filter 53. The disposal pipe 90 is a pipe path used when the phosphoric acid aqueous solution in the treatment tank 34 is disposed of to the outside of the substrate liquid treatment apparatus 100. The waste pipe 90 is provided with a concentration detector 901, a waste valve 91, a cooling tank 93, and a waste valve 95 in this order from the upstream side (the 1 st pipe 50 side).
The concentration detector 901 detects the silicon concentration in the phosphoric acid aqueous solution passing through the waste pipe 90. The concentration detector 901 detects the silicon concentration by measuring the absorbance of light of a specific wavelength in the phosphoric acid aqueous solution, for example. The concentration detector 901 is connected to the control unit 7, and transmits a detection signal corresponding to the detected silicon concentration to the control unit 7.
The cooling tank 93 temporarily stores the relatively high-temperature phosphoric acid aqueous solution discharged from the treatment tank 34 and cools the aqueous solution to a temperature at which the aqueous solution can be discarded. The waste valve 91 provided upstream of the cooling tank 93 is opened when the phosphoric acid aqueous solution flows into the cooling tank 93 from the 1 st pipe 50. The waste valve 95 provided on the downstream side of the cooling tank 93 is opened when the phosphoric acid aqueous solution is discharged from the cooling tank 93. The waste valves 91 and 95 are connected to the control unit 7, and are controlled to open and close by the control unit 7.
The phosphoric acid aqueous solution passed through the 1 st pipe 50 is sent to the waste pipe 90 at an appropriate timing. Thereby, the silicon concentration in the phosphoric acid aqueous solution is detected by the concentration detector 901. When the silicon concentration is higher than the predetermined concentration, pure water from the pure water supply unit 41 or the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply unit 40 is appropriately supplied, thereby reducing the silicon concentration in the phosphoric acid aqueous solution in the circulation system.
< formation of a recycle stream of aqueous phosphoric acid >
When the substrate W is processed in the processing tank 34, the phosphoric acid aqueous solution is circulated in the processing tank 34 and the 1 st pipe 50. To form this circulating flow, first, an aqueous phosphoric acid solution is stored in the treatment tank 34. Specifically, the phosphoric acid aqueous solution is supplied to the outer tank 343 of the liquid treatment unit 39 in the phosphoric acid aqueous solution supply unit 40, and the pump 51 of the 1 st pipe 50 supplies the phosphoric acid aqueous solution from the outer tank 343 to the inner tank 341. When the inside of the inner tank 341 is filled with the phosphoric acid aqueous solution, the phosphoric acid aqueous solution overflowing from the 1 st opening 341P of the inner tank 341 starts to move toward the outer tank 343. When one end of the 1 st pipe 50 reaches the phosphoric acid aqueous solution stored in the outer tank 343, the phosphoric acid aqueous solution in the outer tank 343 starts to be discharged through the 1 st pipe 50. In this manner, a circulating flow in which the phosphoric acid aqueous solution circulates is formed in the circulating system of the treatment tank 34 and the 1 st pipe 50.
The phosphoric acid aqueous solution flowing from the 1 st pipe 50 through the heater 52 is heated so that the phosphoric acid aqueous solution in the inner tank 341 has a predetermined temperature (for example, 80 ℃) at an appropriate timing before the circulating flow is formed or after the circulating flow is formed. When the phosphoric acid aqueous solution is in a high temperature state, water evaporates, and therefore, the phosphoric acid concentration in the phosphoric acid aqueous solution may increase with the passage of time. When the phosphoric acid concentration detected by the concentration detector 501 exceeds a predetermined upper limit of control, the controller 7 supplies purified water from the purified water supply unit 41. The supply of the purified water for adjusting the concentration of the phosphoric acid may be performed at any timing when the substrate W is immersed in the phosphoric acid aqueous solution (i.e., during the liquid treatment of the substrate W), or may be performed when the substrate W is not immersed in the treatment liquid.
Fig. 3 is a timing chart for explaining the operation states of the respective elements during the etching process in the etching apparatus 1. In fig. 3, the horizontal axis represents time, and the operations of the substrate lifting mechanism 36, the on-off valve 513, the on-off valve 57, and the on-off valve 61 are shown in order from above in the vertical direction. The substrate lift mechanism 36 is shown in a state change between "up" indicating a state of being located at an upper position Pos1 above the processing bath 34 and "down" indicating a state of being located at a lower position Pos2 inside the processing bath 34 (see fig. 2). The substrate lifting mechanism 36 moves to the lower position Pos2 while holding the lot (substrate W), thereby performing etching processing on the lot. The on-off valves 513, 57, and 61 show state changes between "on" indicating an open state and "off" indicating a closed state. The "amount returned to the inner tank" shown in fig. 3 shows the amount of the phosphoric acid water amount liquid flowing into the inner tank 341 through the 1 st pipe 50 by the operation of the pump 51.
Fig. 3 is a time chart showing 1 cycle of the etching process performed on one lot including a plurality of substrates W in the processing bath 34 of the etching processing apparatus 1. The etching process includes a carrying-in step S11, a dipping step S12, and a carrying-out step S13.
In the carrying-in step S11, the substrate lift mechanism 36 located at the upper position Pos1 includes processing for receiving a lot from the lot transfer mechanism 19. The dipping step S12 includes a process of lowering the substrate lift mechanism 36 from the upper position Pos1 to the lower position Pos2 to dip the batch in the phosphoric acid aqueous solution stored in the inner tank 341. By performing the dipping step S12, the substrate W is etched. The unloading step S13 includes a process of raising the substrate lift mechanism 36 from the lower position Pos2 to the upper position Pos1 to pull up the lot from the phosphoric acid aqueous solution stored in the inner tank 341, and a process of receiving the lot from the substrate lift mechanism 36 at the upper position Pos1 by the lot transfer mechanism 19. The batch transferred to the batch transfer mechanism 19 is treated with the rinse liquid in the treatment tank 35.
In addition, one cycle of the etching process in the processing bath 34 includes a normal cycle period T1, a bypass cycle period T2, and a normal cycle period T3 in this order. The normal circulation periods T1 and T3 are periods during which the same amount of phosphoric acid aqueous solution as the phosphoric acid aqueous solution discharged from the outer tank 343 is circulated by the operation of the pump 51 and returned to the inner tank 341 through the 1 st pipe 50. Hereinafter, the cycle performed by the normal cycle periods T1 and T3 may be referred to as a "normal cycle". The bypass circulation period T2 is a period during which a part of the phosphoric acid aqueous solution discharged from the outer tank 343 is circulated by the operation of the pump 51 so as to return to the inner tank 341 via the bypass pipe 55 and the remainder returns to the outer tank 343 via the 2 nd pipe 60. Hereinafter, the circulation during the bypass cycle period T2 may be referred to as a "bypass cycle".
In the normal cycle of the normal cycle periods T1 and T3, the controller 7 performs the 1 st cycle control process described above. That is, in the normal cycle periods T1 and T3, the opening/closing valves 511 and 513 of the 1 st pipe 50 are opened, and the opening/closing valve 57 of the bypass pipe 55 of the 1 st pipe 50 and the opening/closing valve 61 of the 2 nd pipe 60 are closed. In this normal cycle, the phosphoric acid aqueous solution discharged from the outer tank 343 via the 1 st pipe 50 is directly introduced into the inner tank 341 via the 1 st pipe 50. Therefore, during the normal cycle periods T1, T3, the phosphoric acid aqueous solution from the outer tank 343 is entirely returned to the inner tank 341. That is, the phosphoric acid aqueous solution equivalent to the phosphoric acid aqueous solution discharged from the outer tank 343 is returned to the inner tank 341.
In contrast, in the bypass cycle of the bypass cycle period T2, the control unit 7 performs the cycle 2 control process described above. That is, the on-off valve 513 of the 1 st pipe 50 is closed, and the on-off valve 57 of the bypass pipe 55 and the on-off valve 61 of the 2 nd pipe 60 are opened. In the bypass cycle, the phosphoric acid aqueous solution discharged from the outer tank 343 through the 1 st pipe 50 moves to the bypass pipe 55 side in the branch part 531. In the connection portion 601, a part of the phosphoric acid aqueous solution passes through the 2 nd pipe 60 and is introduced into the outer tank 343, and the remainder passes through the bypass pipe 55 and moves to the 1 st pipe 50 through the connection portion 533 and is then introduced into the inner tank 341. In the bypass cycle, the phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. Therefore, a decrease in the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be suppressed.
Here, the total amount of the phosphoric acid aqueous solution discharged from the outer tank 343 by the operation of the pump 51 is set to V. Then, the flow rate V1 during the normal cycle periods T1 and T3 is substantially the same as the total amount V, but becomes a flow rate V2 smaller than the flow rate V1 during the bypass cycle period T2, with respect to the flow rate supplied to the inner tank 341 of the phosphoric acid aqueous solution. This is because a part of the phosphoric acid aqueous solution is introduced from the 2 nd pipe 60 into the outer tank 343 because the 2 nd pipe 60 is allowed to flow during the bypass cycle period T2. That is, the amount of the phosphoric acid aqueous solution introduced into the outer vessel 343 is shown by V-V2.
In the bypass cycle period T2, the flow rate detector 59 detects the flow rate introduced into the inner tank 341 through the bypass pipe 55. The flow rate detected by the flow rate detector 59 is the same as the flow rate flowing into the inner tank 341. Then, in the bypass cycle period T2, the control unit 7 controls the flow rate control valve 58 so that the detection signal of the flow rate detector 59 approaches the predetermined flow rate V2. This enables the flow rate supplied to the inner tank 341 in the bypass cycle period T2 to be appropriately adjusted. The control unit 7 may receive a change in the size of V2 via the operation unit.
In the example of fig. 3, the carrying-in step S11 before the dipping step S12 is included in the normal cycle period T1. Therefore, the normal cycle is performed in the carrying-in step S11. In this case, since the entire phosphoric acid aqueous solution heated by the heater 52 is supplied to the inside of the inner tank 341 before the start of the dipping step S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly brought to a desired temperature. In addition, when the liquid is supplied from the supply units 41 to 43 to the processing bath 34 for adjusting the concentration of phosphoric acid or silicon after the etching process of the previous batch, the adjustment of the concentration of phosphoric acid and the concentration of silicon in the phosphoric acid aqueous solution in the inner bath 341 can be performed quickly before the dipping process S12 by performing the normal cycle in the carrying-in process S11.
In the example of fig. 3, a part of the period in which the impregnation step S12 is performed is referred to as a bypass cycle period T2. Specifically, during the dipping step S12, a temporary bypass cycle is performed. By performing the bypass circulation, the flow of the phosphoric acid aqueous solution generated in the inner tank 341 can be reduced as compared with the case of performing the normal circulation. That is, since the variation in the flow of the phosphoric acid aqueous solution in the inner tank 341 can be reduced, the variation in the etching amount in the substrate W can be reduced.
In the example of fig. 3, the initial stage of the dipping step S12 is included in the normal cycle period T1. That is, in the dipping step S12, a normal cycle is first performed for a certain period of time. Immediately after the start of the dipping step S12, the batch is dipped in the phosphoric acid treatment solution in the inner tank 341, and therefore the temperature of the phosphoric acid aqueous solution tends to be low. Then, by performing the normal cycle immediately after the start of the dipping step S12, the entire phosphoric acid aqueous solution heated by the heater 52 can be returned to the inner tank 341. This can reduce the temperature drop of the phosphoric acid aqueous solution in the inner tank 341.
In the example of fig. 3, the latter stage of the impregnation step S12 is included in the normal cycle period T3. That is, the bypass cycle is shifted to the normal cycle at the later stage of the dipping step S12, and the carrying-out step S13 is performed. In general, in the dipping step S12, since silicon is eluted from each substrate W into the phosphoric acid aqueous solution, the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 tends to be high. Accordingly, it is preferable to rapidly move the phosphoric acid aqueous solution in the inner tank 341 to the outer tank 343 by performing a normal circulation before the completion of the dipping step S12. When the silicon concentration of the phosphoric acid aqueous solution is larger than the reference value, the silicon concentration of the phosphoric acid aqueous solution in the circulation system is appropriately reduced by supplying purified water or the phosphoric acid aqueous solution from the purified water supply portion 41 or the phosphoric acid aqueous solution supply portion 43. Therefore, the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 can be quickly optimized by the normal cycle.
In the example of fig. 3, the normal cycle is also performed in the carrying-out step S13 after the dipping step S12. In this case, by supplying the respective processing liquids from the respective supply units 41 to 43 during or after completion of the dipping step S12, the phosphoric acid concentration and the silicon concentration in the phosphoric acid aqueous solution in the inner tank 341 can be quickly optimized until the start of the next etching process cycle. In addition, when the bypass circulation is performed in the dipping step S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 may be lowered. In contrast, by performing the normal cycle in the carrying-out step S13 after the dipping step S12, the temperature of the phosphoric acid aqueous solution in the inner tank 341 can be quickly raised.
In the example of fig. 3, only a part of the impregnation step S12 is set to perform the bypass circulation. However, the bypass circulation may be performed throughout the impregnation process S12. In addition, the bypass circulation may be performed in part or all of the carrying-in step S11 or the carrying-out step S13.
In addition, the bypass cycle does not have to be performed during all cycles of the etching process. For example, the controller 7 may receive, via the operation unit, whether or not to change the bypass cycle every time the etching process is cycled. In each cycle, the setting or change of the timing of executing the bypass cycle may be received via the operation unit. The control unit 7 may automatically execute the bypass cycle in response to the satisfaction or dissatisfaction of a predetermined requirement. In this case, the control unit 7 may have a determination unit that determines whether or not a predetermined requirement is satisfied based on a threshold value. As the predetermined requirements, for example, the etching amount of the substrate W, the temperature of the phosphoric acid aqueous solution in the circulation system, the phosphoric acid concentration, the silicon concentration, and the like may be set.
Further, although the opening/closing valves and the flow rate control valves provided in the etching processing apparatus 1 are controlled by the control unit 7, they may be manually operated by an operator. Then, the normal cycle and the bypass cycle may be switched by manual operation by an operator.
The present invention has been described in detail, but the above description is illustrative in all aspects, and the present invention is not limited thereto. It is to be understood that numerous modifications, not illustrated, may be devised without departing from the scope of the invention. The respective configurations described in the above embodiments and modifications can be appropriately combined or omitted within a range where they partially contradict each other.
Description of the reference numerals
1 etching processing apparatus
100 substrate liquid processing apparatus
34 treatment tank
341 internal groove
341B bottom
341P 1 st opening
343 outer groove
343P 2 nd opening
36 base plate lifting mechanism
50 st pipe
501 concentration detector
51 pump
511. 513, 57, 61 opening and closing valve
52 heater
531 branching part
55 bypass pipe
58 flow control valve
59 flow detector
60 nd 2 nd pipe
61 open/close valve
7 control part
S11 carrying-in process
S12 immersion step
S13 carrying-out process
T1, T3 Normal cycle period
T2 bypass cycle period
And (5) a W substrate.

Claims (8)

1. A substrate processing apparatus that processes a substrate, comprising:
a bottomed cylindrical inner tank having a 1 st opening at an upper portion thereof;
a bottomed cylindrical outer tank provided at an outer peripheral portion of the inner tank and having a 2 nd opening at an upper portion thereof;
a 1 st pipe connecting the inside of the inner tank and the inside of the outer tank;
a pump provided in the 1 st pipe and configured to supply the processing liquid from the outer tank to the inner tank;
a heater provided in the 1 st pipe and configured to heat the treatment liquid passing through the 1 st pipe;
a 2 nd pipe connecting a pipe portion between the heater and the inner tank and the outer tank in the 1 st pipe; and
and a 2 nd pipe valve provided in the 2 nd pipe and configured to change a flow rate of the treatment liquid passing through the 2 nd pipe.
2. The substrate processing apparatus according to claim 1,
one end of the 1 st pipe is connected to the bottom of the inner tank.
3. The substrate processing apparatus according to claim 1 or 2,
further comprising a 1 st pipe valve provided between the heater and the inner tank in the 1 st pipe to change a flow rate of the treatment liquid passing through the 1 st pipe,
the 1 st pipe valve is provided between a portion of the 1 st pipe connected to the 2 nd pipe and the inner tank.
4. The substrate processing apparatus according to claim 3,
the control unit is connected to the 1 st pipe valve and the 2 nd pipe valve, and controls the 1 st pipe valve and the 2 nd pipe valve.
5. The substrate processing apparatus according to claim 4,
the control unit executes the following processing:
a 1 st cycle control process of opening the 1 st pipe valve and closing the 2 nd pipe valve; and
and a 2 nd circulation control process of opening the 1 st pipe valve and the 2 nd pipe valve.
6. The substrate processing apparatus according to any one of claims 3 to 5,
the 1 st pipe includes a bypass pipe branched from a branch portion between the heater and the 1 st pipe valve in the 1 st pipe and connected to the inner tank,
further comprising a bypass pipe valve provided in the bypass pipe for changing the flow rate of the treatment liquid passing through the bypass pipe,
the 2 nd pipe is connected between the branch portion of the bypass pipe and the bypass pipe valve.
7. The substrate processing apparatus according to any one of claims 1 to 6,
the 2 nd pipe passes through the 2 nd opening and is connected to the inside of the outer tank.
8. A method for processing a substrate, characterized in that,
a substrate is processed by the substrate processing apparatus according to any one of claims 1 to 7,
the substrate processing method includes:
a) a step of immersing the substrate in the processing liquid stored in the inner tank;
b) a step of returning the processing liquid passing through the 1 st pipe to the inner tank and returning the processing liquid passing through the 1 st pipe to the outer tank via the 2 nd pipe in the step a); and
c) a step of heating the treatment liquid passing through the 1 st pipe in the step b).
CN201980079317.XA 2018-12-17 2019-12-06 Substrate processing apparatus and substrate processing method Pending CN113169065A (en)

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JP2018235659A JP7289649B2 (en) 2018-12-17 2018-12-17 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
PCT/JP2019/047902 WO2020129713A1 (en) 2018-12-17 2019-12-06 Substrate processing apparatus and substrate processing method

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CN115921410A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Cleaning system and method

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JP4966223B2 (en) * 2008-02-29 2012-07-04 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP5829444B2 (en) 2011-07-08 2015-12-09 株式会社Ｓｃｒｅｅｎホールディングス Phosphoric acid regeneration method, phosphoric acid regeneration apparatus and substrate processing system
JP6326387B2 (en) * 2015-03-19 2018-05-16 東京エレクトロン株式会社 Substrate liquid processing apparatus, substrate liquid processing method, and computer readable storage medium storing substrate liquid processing program

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115921410A (en) * 2022-12-14 2023-04-07 西安奕斯伟材料科技有限公司 Cleaning system and method

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