JP2018152622A - Substrate liquid processing apparatus and substrate liquid processing method and computer readable storage device storing substrate liquid processing program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent failure and the like of a concentration sensor in a substrate liquid processing apparatus.SOLUTION: A substrate liquid processing apparatus of the present embodiment comprises: a process liquid storage part (38) which stores a process liquid for processing a substrate (8); a process liquid supply part (39) which supplies the process liquid to the process liquid storage part (38); a process liquid discharge part (41) which discharges the process liquid; a concentration sensor (61) which measures a concentration of the process liquid; and a control part (7) which is connected with the concentration sensor (61) to control the process liquid supply part (39) and the process liquid discharge part (41). The control part (7) causes the process liquid discharge part (41) to discharge the process liquid and causes the process liquid supply part (39) to supply new process liquid and causes only part of the process liquid to wet the concentration sensor (61) to measure a concentration of the process liquid to reduce the process liquid to wet the concentration sensor (61) to be less than the process liquid discharged by the process liquid discharge part (41).SELECTED DRAWING: Figure 2

Description

  The present invention relates to a substrate liquid processing apparatus and a substrate liquid processing method for measuring a concentration (for example, silicon concentration) in a processing liquid for processing a substrate, and a computer-readable storage medium storing a substrate liquid processing program.

  In the manufacture of semiconductor components, flat panel displays, etc., a substrate liquid processing apparatus is used that performs an etching process on a substrate such as a semiconductor wafer or a liquid crystal substrate with an etching liquid (processing liquid).

  A conventional substrate liquid processing apparatus includes a processing liquid storage unit that stores a processing liquid for processing a substrate, a processing liquid supply unit that supplies the processing liquid to the processing liquid storage unit, and a processing liquid stored in the processing liquid storage unit. And a processing liquid circulation section for heating the processing liquid and the like.

  Then, the substrate liquid processing apparatus immerses a plurality of substrates in the processing liquid stored in the processing liquid storage unit, and liquid-processes the substrate with the processing liquid. Further, the substrate liquid processing apparatus circulates the processing liquid supplied from the processing liquid supply unit in the processing liquid circulation unit and heats the processing liquid to a predetermined temperature.

  In this substrate liquid processing apparatus, when the substrate is repeatedly processed with the processing liquid, the concentration of impurities and the like contained in the processing liquid increases due to the processing of the substrate, and the substrate cannot be processed satisfactorily. For example, when the substrate is etched with a phosphoric acid aqueous solution (etching solution), the silicon concentration in the processing solution falls within a certain range because the processing solution capability (etching rate) depends on the silicon concentration in the processing solution. Although it is necessary to hold the substrate, the silicon concentration in the etching solution is increased by repeating the processing of the substrate, the ability of the processing solution is lowered, and the substrate cannot be satisfactorily etched.

  Therefore, the conventional substrate liquid processing apparatus is provided with a concentration sensor for measuring the silicon concentration in the processing liquid.

JP 2001-23952 A

  However, in the conventional substrate liquid processing apparatus, the concentration sensor may malfunction or malfunction.

  Therefore, in the present invention, the processing liquid for processing the substrate stored in the processing liquid storage part is discharged from the processing liquid discharge part, and the new processing liquid is supplied from the processing liquid supply part, By measuring the concentration in the processing liquid by contacting only the portion with the concentration sensor, the processing liquid to be contacted with the concentration sensor is less than the processing liquid discharged from the processing liquid discharge section. did.

  In particular, only a part of the processing liquid is branched and brought into contact with the concentration sensor to measure the concentration in the processing liquid.

  Further, the processing liquid for processing the substrate stored in the processing liquid storage unit is discharged at a predetermined timing, a new processing liquid is supplied from the processing liquid supply unit, and the processing liquid is processed at a predetermined timing. The predetermined timing at which the concentration in the liquid is measured by the concentration sensor and the concentration in the processing liquid is measured by the concentration sensor is more frequent than the predetermined timing at which the processing liquid is discharged from the processing liquid discharge unit. Decided to reduce.

  In the present invention, it is possible to prevent the concentration sensor from malfunctioning or malfunctioning, and to satisfactorily liquid-treat the substrate.

Plane explanatory drawing which shows a substrate liquid processing apparatus. Explanatory drawing which shows an etching processing apparatus. Explanatory drawing which shows a process liquid discharge part. Explanatory drawing which shows a substrate liquid processing method. Explanatory drawing which shows a substrate liquid processing method.

  Hereinafter, specific configurations of a substrate liquid processing apparatus, a substrate liquid processing method, and a substrate liquid processing program according to the present invention will be described with reference to the drawings.

  As shown in FIG. 1, the substrate liquid processing apparatus 1 includes a carrier carry-in / out unit 2, a lot forming unit 3, a lot placement unit 4, a lot transport unit 5, a lot processing unit 6, and a control unit 7.

  The carrier loading / unloading unit 2 loads and unloads a carrier 9 in which a plurality of (for example, 25) substrates (silicon wafers) 8 are stored in a horizontal posture.

  The carrier loading / unloading unit 2 includes a carrier stage 10 on which a plurality of carriers 9 are placed, a carrier transport mechanism 11 that transports the carriers 9, carrier carriers 12, 13 that temporarily store the carriers 9, A carrier mounting table 14 on which the carrier 9 is mounted is provided. Here, the carrier stock 12 is temporarily stored before the substrate 8 as a product is processed by the lot processing unit 6. The carrier stock 13 is temporarily stored after the substrate 8 to be a product is processed by the lot processing unit 6.

  Then, the carrier loading / unloading unit 2 transports the carrier 9 loaded into the carrier stage 10 from the outside to the carrier stock 12 and the carrier mounting table 14 using the carrier transport mechanism 11. The carrier loading / unloading unit 2 transports the carrier 9 placed on the carrier placing table 14 to the carrier stock 13 and the carrier stage 10 using the carrier carrying mechanism 11. The carrier 9 conveyed to the carrier stage 10 is carried out to the outside.

  The lot forming unit 3 forms a lot composed of a plurality of (for example, 50) substrates 8 to be processed simultaneously by combining the substrates 8 accommodated in one or a plurality of carriers 9.

  The lot forming unit 3 is provided with a substrate transfer mechanism 15 for transferring a plurality of substrates 8. The substrate transport mechanism 15 can change the posture of the substrate 8 from the horizontal posture to the vertical posture and from the vertical posture to the horizontal posture during the transportation of the substrate 8.

  The lot forming unit 3 then transports the substrate 8 from the carrier 9 placed on the carrier placing table 14 to the lot placing unit 4 using the substrate carrying mechanism 15, and the lot placing unit 4 forms a lot. Further, the lot forming unit 3 conveys the lot placed on the lot placing unit 4 to the carrier 9 placed on the carrier placing table 14 by the substrate carrying mechanism 15. The substrate transport mechanism 15 is a substrate support unit for supporting a plurality of substrates 8, a pre-process substrate support unit that supports the substrate 8 before processing (before being transported by the lot transport unit 5), and a process There are two types of post-process substrate support units that support the subsequent substrate 8 (after being transported by the lot transport unit 5). This prevents particles or the like adhering to the substrate 8 before processing from being transferred to the substrate 8 after processing.

  The lot placing unit 4 temporarily places (waits) the lot carried by the lot carrying unit 5 between the lot forming unit 3 and the lot processing unit 6 on the lot placing table 16.

  The lot placement unit 4 includes a loading-side lot placement table 17 for placing a lot before processing (before being transported by the lot transport unit 5), and after processing (after transported by the lot transport unit 5). A carry-out lot mounting table 18 on which the lot is mounted is provided. On the carry-in lot mounting table 17 and the carry-out lot mounting table 18, a plurality of substrates 8 for one lot are placed side by side in a vertical posture.

  In the lot placement unit 4, the lot formed by the lot formation unit 3 is placed on the carry-in side lot placement table 17, and the lot is carried into the lot processing unit 6 via the lot transport unit 5. In the lot placement unit 4, the lot carried out from the lot processing unit 6 via the lot transport unit 5 is placed on the carry-out side lot placement table 18, and the lot is transported to the lot forming unit 3.

  The lot transport unit 5 transports lots between the lot placing unit 4 and the lot processing unit 6 or between the lot processing units 6.

  The lot transport unit 5 is provided with a lot transport mechanism 19 for transporting a lot. The lot transport mechanism 19 includes a rail 20 disposed along the lot placement unit 4 and the lot processing unit 6, and a moving body 21 that moves along the rail 20 while holding a plurality of substrates 8. The moving body 21 is provided with a substrate holding body 22 for holding a plurality of substrates 8 arranged in the front-rear direction in a vertical posture so as to freely advance and retract.

  Then, the lot transfer unit 5 receives the lot placed on the carry-in side lot mounting table 17 by the substrate holder 22 of the lot transfer mechanism 19 and delivers the lot to the lot processing unit 6. In addition, the lot transfer unit 5 receives the lot processed by the lot processing unit 6 by the substrate holder 22 of the lot transfer mechanism 19 and transfers the lot to the unloading lot mounting table 18. Further, the lot transfer unit 5 uses the lot transfer mechanism 19 to transfer the lot within the lot processing unit 6.

  The lot processing unit 6 performs processing such as etching, cleaning, and drying by using a plurality of substrates 8 arranged in the front and back in a vertical posture as one lot.

  The lot processing unit 6 includes a drying processing device 23 for drying the substrate 8, a substrate holder cleaning processing device 24 for cleaning the substrate holder 22, and a cleaning processing device 25 for cleaning the substrate 8. And two etching apparatuses 26 for performing the etching process of the substrate 8 are provided side by side.

  In the drying processing apparatus 23, a substrate elevating mechanism 28 is provided in a processing tank 27 so as to be movable up and down. The processing tank 27 is supplied with a processing gas for drying (IPA (isopropyl alcohol) or the like). The substrate lifting mechanism 28 holds a plurality of substrates 8 for one lot side by side in a vertical posture. The drying processing device 23 receives the lot from the substrate holder 22 of the lot transport mechanism 19 by the substrate lifting mechanism 28, and lifts and lowers the lot by the substrate lifting mechanism 28, thereby using the drying processing gas supplied to the processing tank 27. The substrate 8 is dried. Further, the drying processing apparatus 23 delivers the lot from the substrate lifting mechanism 28 to the substrate holder 22 of the lot transport mechanism 19.

  The substrate holder cleaning processing device 24 is configured to be able to supply a cleaning processing liquid and a dry gas to the processing tank 29, and after supplying the cleaning processing liquid to the substrate holder 22 of the lot transport mechanism 19, The substrate holder 22 is cleaned by supplying the dry gas.

  The cleaning processing apparatus 25 includes a cleaning processing tank 30 and a rinsing processing tank 31, and substrate processing mechanisms 32 and 33 are provided in the processing tanks 30 and 31 so as to be movable up and down. A cleaning processing solution (SC-1 or the like) is stored in the cleaning processing tank 30. The rinsing treatment tank 31 stores a rinsing treatment liquid (pure water or the like).

  The etching processing apparatus 26 includes a processing tank 34 for etching and a processing tank 35 for rinsing, and substrate lifting mechanisms 36 and 37 are provided in the processing tanks 34 and 35 so as to be movable up and down. The etching treatment tank 34 stores an etching treatment liquid (phosphoric acid aqueous solution). The rinsing treatment tank 35 stores a rinsing treatment liquid (pure water or the like).

  The cleaning processing device 25 and the etching processing device 26 have the same configuration. The etching processing apparatus 26 will be described. The substrate elevating mechanisms 36 and 37 hold a plurality of substrates 8 for one lot side by side in a vertical posture. The etching processing apparatus 26 receives the lot from the substrate holder 22 of the lot transport mechanism 19 by the substrate lifting mechanism 36, and the substrate lifting mechanism 36 moves the lot up and down so that the lot is immersed in the etching processing liquid in the processing tank 34. Then, the substrate 8 is etched. Thereafter, the etching processing apparatus 26 delivers the lot from the substrate lifting mechanism 36 to the substrate holder 22 of the lot transport mechanism 19. In addition, the etching processing device 26 receives the lot from the substrate holder 22 of the lot transport mechanism 19 by the substrate lifting mechanism 37, and lifts the lot by the substrate lifting mechanism 37, thereby processing the lot into the processing liquid for rinsing the processing tank 35. Then, the substrate 8 is rinsed. Thereafter, the etching processing apparatus 26 delivers the lot from the substrate lifting mechanism 37 to the substrate holder 22 of the lot transport mechanism 19.

  In this etching processing apparatus 26, the substrate 8 is subjected to liquid processing (etching processing) using an aqueous solution (88.3% by weight phosphoric acid aqueous solution) of a chemical (phosphoric acid) having a predetermined concentration as a processing liquid (etching liquid).

  As shown in FIG. 2, the etching processing apparatus 26 stores a processing liquid made of a phosphoric acid aqueous solution having a predetermined concentration (88.3% by weight phosphoric acid aqueous solution) and a processing liquid storage unit 38 for processing the substrate 8; Processing liquid supply unit 39 for supplying the processing liquid to the processing liquid storage unit 38, processing liquid circulation unit 40 for circulating the processing liquid stored in the processing liquid storage unit 38, and processing from the processing liquid storage unit 38 A treatment liquid discharger 41 for discharging the liquid;

  The processing liquid storage unit 38 forms an outer tank 42 whose upper part is opened around the upper part of the processing tank 34 whose upper part is opened, and stores the processing liquid in the processing tank 34 and the outer tank 42. In the processing tank 34, a processing liquid to be liquid processed is stored by immersing the substrate 8 by the substrate lifting mechanism 36. In the outer tank 42, the processing liquid overflowed from the processing tank 34 is stored, and the processing liquid is supplied to the processing tank 34 by the processing liquid circulation unit 40.

  The treatment liquid supply unit 39 is an aqueous solution for supplying an aqueous solution (85% by weight phosphoric acid aqueous solution) of a drug (phosphoric acid) having a concentration different from the treatment liquid (concentration lower than the treatment liquid) to the treatment liquid storage unit 38. A supply unit 43 and a water supply unit 44 for supplying water (pure water) to the treatment liquid storage unit 38 are configured.

  The aqueous solution supply unit 43 supplies an aqueous solution supply source 45 for supplying a phosphoric acid aqueous solution having a predetermined concentration (85% by weight) and a predetermined temperature (25 ° C.) to the outer tank 42 of the treatment liquid storage unit 38 via a flow rate regulator 46. Connect. The flow rate regulator 46 is connected to the control unit 7, and the control unit 7 performs open / close control and flow rate control.

  The water supply unit 44 connects a water supply source 47 for supplying pure water at a predetermined temperature (25 ° C.) to the outer tank 42 of the treatment liquid storage unit 38 via a flow rate regulator 48. The flow rate regulator 48 is connected to the control unit 7, and the control unit 7 performs open / close control and flow rate control.

  The processing liquid circulation unit 40 forms a circulation channel 49 between the bottom of the outer tank 42 of the processing liquid storage unit 38 and the bottom of the processing tank 34. In the circulation channel 49, a pump 50, a heater 51, and a filter 52 are provided in this order. The pump 50 and the heater 51 are connected to the control unit 7 and are driven and controlled by the control unit 7. Then, the processing liquid circulation unit 40 circulates the processing liquid from the outer tank 42 to the processing tank 34 by driving the pump 50. At that time, the treatment liquid is heated to a predetermined temperature (165 ° C.) by the heater 51.

  The processing liquid discharge unit 41 includes a first processing liquid discharge unit 53 that discharges the processing liquid from the processing liquid storage unit 38, and a second processing liquid discharge unit 54 that discharges the processing liquid from the processing liquid circulation unit 40. Has been.

  The first treatment liquid discharge part 53 connects a discharge flow path 55 communicating with an external drain pipe to the bottom of the treatment tank 34 of the treatment liquid storage part 38, and an open / close valve 56 is provided in the discharge flow path 55. . The on-off valve 56 is connected to the control unit 7 and is controlled to open and close by the control unit 7.

  The second treatment liquid discharge part 54 connects a discharge flow path 57 communicating with an external drain pipe to the middle part of the circulation flow path 49 (between the heater 51 and the filter 52) of the treatment liquid circulation part 40 and discharges it. An opening / closing valve 58 is provided in the flow path 57. Further, a bypass channel 59 communicating with an external drainage pipe is connected to the middle part of the discharge channel 57 (downstream of the on-off valve 58), and the on-off valve 60 and the silicon concentration in the processing liquid are connected to the bypass channel 59. A concentration sensor 61 for measurement is provided in order. The on-off valves 58 and 60 are connected to the control unit 7 and are controlled to be opened and closed by the control unit 7. The concentration sensor 61 is connected to the controller 7, and the controller 7 measures the silicon concentration in the processing liquid.

  As described above, in the substrate liquid processing apparatus 1, since the concentration sensor 61 is provided in the second processing liquid discharge section 54 branched from the processing liquid circulation section 40, the processing liquid is discharged from the processing liquid circulation section 40. Only the treatment liquid comes into contact with the concentration sensor 61. As a result, in the substrate liquid processing apparatus 1, the concentration sensor 61 is prevented from malfunctioning or malfunctioning due to erosion of the concentration sensor 61 by the processing liquid or adhesion of impurities contained in the processing liquid to the concentration sensor 61. can do. Further, in the substrate liquid processing apparatus 1, it is possible to prevent dust deposited from the concentration sensor 61 from being mixed into the processing liquid, thereby causing particles to adhere to the substrate 8 and preventing the substrate 8 from being satisfactorily liquid processed.

  Here, the concentration sensor 61 is not limited to the case where the concentration sensor 61 is provided in the bypass flow path 59 branched from the discharge flow path 57 as shown in FIGS. 2 and 3A, but the circulation flow as shown in FIG. You may provide in the bypass flow path 62 branched from the path 49, and you may provide in the discharge flow path 57 as shown in FIG.3 (c). When the concentration sensor 61 is provided in the discharge flow path 57, only a part of the processing liquid stored in the processing liquid storage section 38 (processing liquid discharged from the processing liquid circulation section 40) comes into contact with the concentration sensor 61. Therefore, when the concentration sensor 61 is provided in the bypass flow paths 59 and 62, a part of the processing liquid discharged from the processing liquid circulation section 40 (the processing liquid discharged from the bypass flow paths 59 and 62). ) Only comes into contact with the concentration sensor 61. Therefore, by providing the concentration sensor 61 in the bypass flow passages 59 and 62, the time (frequency) that the treatment liquid contacts the concentration sensor 61 can be further shortened (reduced).

  The etching processing apparatus 26 supplies a phosphoric acid aqueous solution having a predetermined concentration (85% by weight) and a predetermined temperature (25 ° C.) to the processing liquid storage unit 38 by the aqueous solution supply unit 43, and a predetermined concentration (88.3% by weight) by the processing liquid circulation unit 40. %) And a predetermined temperature (165 ° C.) to generate a processing liquid, and the processing liquid is stored in the processing liquid storage unit 38. Further, the etching processing apparatus 26 supplies pure water in an amount corresponding to the amount of water evaporated by heating to the processing liquid storage unit 38 by the water supply unit 44. As a result, the etching processing apparatus 26 stores the processing liquid having a predetermined concentration (88.3% by weight) and a predetermined temperature (165 ° C.) in the processing tank 34 of the processing liquid storage unit 38, and the substrate lifting mechanism 36 stores the processing liquid in the processing liquid. By immersing 8, the substrate 8 is etched.

  Further, the etching processing apparatus 26 discharges a part (or all) of the processing liquid in the processing liquid storage unit 38 by the processing liquid discharge unit 41 and newly adds a processing liquid (aqueous solution or / and pure) by the processing liquid supply unit 39. Water) is supplied, and the processing liquid stored in the processing liquid storage unit 38 is appropriately updated (replaced).

  The control unit 7 controls the operation of each unit of the substrate liquid processing apparatus 1 (such as the carrier carry-in / out unit 2, the lot forming unit 3, the lot placing unit 4, the lot transport unit 5, and the lot processing unit 6).

  The control unit 7 is a computer, for example, and includes a computer-readable storage medium 63. The storage medium 63 stores a program for controlling various processes executed in the substrate liquid processing apparatus 1. The control unit 7 controls the operation of the substrate liquid processing apparatus 1 by reading and executing a program stored in the storage medium 63. The program may be stored in a computer-readable storage medium 63 and may be installed in the storage medium 63 of the control unit 7 from another storage medium. Examples of the computer-readable storage medium 63 include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  The substrate liquid processing apparatus 1 is configured as described above, and the control unit 7 controls each unit (carrier carry-in / out unit 2, lot forming unit 3, lot placing unit 4, lot transport unit 5, lot processing unit 6). The substrate 8 is processed by controlling the operation of the above.

  When etching the substrate 8 by the substrate liquid processing apparatus 1, the control unit 7 controls the etching processing apparatus 26 and the like as described below according to the substrate liquid processing program stored in the storage medium 63 (see FIG. 4). ).

  First, the substrate liquid processing apparatus 1 replaces the processing liquid stored in the processing liquid storage unit 38 before starting the etching process of the substrate 8 (processing liquid replacement step).

In this processing liquid exchange step, the control unit 7 supplies the processing liquid to the processing liquid storage unit 38 by the processing liquid supply unit 39 and heats the processing liquid circulation unit 40 while circulating the processing liquid to obtain a predetermined concentration ( 88.3% by weight) and a predetermined temperature (165 ° C.). Thereafter, the controller 7 immerses a dummy silicon wafer in the processing liquid for a predetermined time by the substrate lifting mechanism 36 so that the silicon concentration in the processing liquid becomes a predetermined concentration. In this processing liquid exchange step, the control section 7 circulates the processing liquid by the processing liquid circulation section 40, opens the on-off valve 58 at a predetermined timing, and discharges the processing liquid from the processing liquid circulation section 40 to the second processing liquid. The liquid is drained through the unit 54. Then, the control unit 7 opens the on-off valve 60 at a predetermined timing (for example, immediately before the end of the processing liquid replacement step), and causes the concentration sensor 61 to measure the silicon concentration in the processing liquid. When the silicon concentration measured by the concentration sensor 61 is not within the predetermined concentration range, the controller 7 issues an alarm and interrupts the processing. In the process liquid replacement step, the process liquid may be constantly circulated in the process liquid circulation unit 40, or may be circulated intermittently. For example, a dummy silicon wafer is immersed in the process liquid for a predetermined time. Then, immediately after the silicon wafer is immersed, the circulation may be stopped for a while, and may be circulated from a predetermined timing.

  Here, the relationship between the immersion time of the silicon wafer and the silicon concentration is examined in advance, and the silicon concentration falls within a predetermined concentration range by immersing the dummy silicon wafer in the processing liquid for a predetermined time. It may be controlled such that the silicon concentration is measured at a predetermined timing in 61 and the dummy silicon wafer is immersed in the processing solution until the silicon concentration falls within a predetermined concentration range. It should be noted that the timing at which the concentration sensor 61 measures the timing when the on-off valve 60 is opened is less time than the timing at which the on-off valve 58 is opened and the processing liquid is discharged. (Frequency) can be made even shorter (less).

  After the silicon concentration measured by the concentration sensor 61 falls within the predetermined concentration range, the substrate liquid processing apparatus 1 performs an etching process on the substrate 8 (substrate liquid processing step).

  In this substrate liquid processing step, a substrate carry-in step for carrying the substrate 8 into the treatment bath 34, a substrate treatment step for treating the substrate 8 in the treatment bath 34, and a substrate carry-out step for carrying the substrate 8 out of the treatment bath 34 are performed. .

  In the substrate carrying-in process, after the substrate lifting mechanism 36 is lifted from the inside of the processing tank 34, the substrate 8 for one lot to be processed at the same time is transported from the lot transport mechanism 19 to the substrate lifting mechanism 36. The held substrate elevating mechanism 36 is lowered into the processing tank 34. As a result, the substrate 8 is immersed in the processing liquid stored in the processing tank 34.

  In the substrate processing step, the substrate elevating mechanism 36 is held in the processing tank 34 while being lowered for a predetermined time. Thereby, the substrate 8 is immersed in the processing liquid for a predetermined time, and the substrate 8 is etched.

  In the substrate unloading step, the substrate lifting mechanism 36 holding the substrate 8 is lifted from the inside of the processing tank 34, and then simultaneously processed one lot of substrates 8 is transported from the substrate lifting mechanism 36 to the lot transport mechanism 19.

  In this substrate liquid processing step, when the substrate 8 is etched with the processing liquid, the concentration of silicon contained in the processing liquid gradually increases. Since the capability (etching rate) of the treatment liquid depends on the silicon concentration in the treatment liquid, it is necessary to keep the silicon concentration in the treatment liquid within a certain concentration range. Therefore, the control section 7 drives the pump 50 during the etching process of the substrate 8 to circulate the processing liquid in the processing liquid circulation section 40, and opens the on-off valve 58 intermittently from a predetermined timing, thereby controlling the processing liquid. The processing liquid is discharged from the processing liquid circulation section 40 via the second processing liquid discharge section 54, and a new processing liquid is supplied from the processing liquid supply section 39. Then, the controller 7 opens the on-off valve 60 at a predetermined timing (for example, immediately after the start of the substrate liquid processing step or immediately before the end), and causes the concentration sensor 61 to measure the silicon concentration in the processing liquid. When the silicon concentration measured by the concentration sensor 61 is not within the predetermined concentration range, the controller 7 issues an alarm and interrupts the processing. In the substrate liquid processing step, the processing liquid may be circulated intermittently in the processing liquid circulation unit 40 or may be circulated constantly.

  Here, the relationship between the etching time of the substrate 8, the discharge amount of the processing liquid during the etching process, the supply amount of the new processing liquid, and the silicon concentration is examined in advance, and a predetermined amount of the processing liquid is etched during the etching process of the substrate 8. The silicon concentration falls within a predetermined concentration range by newly supplying a predetermined amount of processing liquid, but the concentration sensor 61 measures the silicon concentration at a predetermined timing, and the silicon concentration reaches the predetermined concentration. You may control to complete | finish a substrate liquid processing process, when it becomes above. In this case as well, the timing at which the on-off valve 60 is opened and the concentration sensor 61 measures is less frequent than the timing at which the on-off valve 58 is opened to discharge the processing liquid, so that the processing liquid contacts the concentration sensor 61. The time (frequency) to perform can be further shortened (less).

  The substrate liquid processing apparatus 1 adjusts the silicon concentration of the processing liquid to be within a predetermined range after the substrate carry-in process, the substrate processing process, and the substrate carry-out process are repeated a predetermined number of times (adjustment process).

  In this adjustment step, the control unit 7 supplies the processing liquid to the processing liquid storage unit 38 by the processing liquid supply unit 39 and heats it while circulating the processing liquid by the processing liquid circulation unit 40 to obtain a predetermined concentration (88.3 wt. %) And a predetermined temperature (165 ° C.) treatment liquid are generated, and the silicon concentration in the treatment liquid is adjusted to a predetermined concentration. In this adjustment step, the control unit 7 circulates the processing liquid through the processing liquid circulation unit 40, and intermittently opens the on-off valve 58 from a predetermined timing so that the processing liquid is supplied from the processing liquid circulation unit 40 to the second processing liquid. The liquid is discharged through the discharge unit 54, and a new processing liquid is supplied from the processing liquid supply unit 39. Then, the control unit 7 opens the on-off valve 60 at a predetermined timing (for example, immediately before the end of the adjustment step), and causes the concentration sensor 61 to measure the silicon concentration in the processing liquid. The control unit 7 warns when the silicon concentration measured by the concentration sensor 61 is not within the predetermined concentration range, and interrupts the loading of the substrate 8 into the processing tank 34. In the adjustment step, the treatment liquid may be circulated at all times in the treatment liquid circulation unit 40, or may be circulated intermittently, or the circulation may be stopped for a while and circulated from a predetermined timing. .

  Here, the relationship between the discharge amount of the treatment liquid, the supply amount of the new treatment liquid, and the silicon concentration is examined, and the silicon concentration is obtained by discharging a predetermined amount of the treatment liquid and newly supplying a predetermined amount of the treatment liquid. The concentration sensor 61 measures the silicon concentration at a predetermined timing, discharges the treatment liquid until the silicon concentration falls within the predetermined concentration range, and supplies a new treatment liquid. You may control. It should be noted that the timing at which the concentration sensor 61 measures the timing when the on-off valve 60 is opened is less time than the timing at which the on-off valve 58 is opened and the processing liquid is discharged. (Frequency) can be made even shorter (less).

  As described above, in the substrate liquid processing apparatus 1, the processing liquid for processing the substrate 8 stored in the processing liquid storage unit 38 is circulated in the processing liquid circulation unit 40, and the circulating processing liquid is circulated as a processing liquid. The silicon concentration in the processing liquid discharged from the second processing liquid discharge unit 54 branched in the middle of the unit 40 is measured by the concentration sensor 61 provided in the second processing liquid discharge unit 54.

  As a result, in the substrate liquid processing apparatus 1, it is possible to shorten the time during which the concentration sensor 61 is in contact with the processing liquid, and it is possible to prevent the concentration sensor 61 from malfunctioning or malfunctioning. It is possible to prevent dust deposited from 61 from adhering to the substrate 8 as particles, and the substrate 8 can be satisfactorily liquid-treated.

  As another embodiment, in the embodiment shown in FIG. 4, in the substrate liquid processing step and the adjustment step, the control unit 7 controls the substrate 8 to maintain the silicon concentration in the processing liquid within a certain concentration range. During the etching process, the pump 50 is driven to circulate the processing liquid in the processing liquid circulation unit 40, and the on-off valve 58 is intermittently opened from a predetermined timing to partially remove the processing liquid from the processing liquid circulation unit 40. However, the present invention is not limited to this, and is not limited to this, and a predetermined time from a predetermined timing as shown in FIG. Then, the on-off valve 58 is continuously opened to discharge a part of the processing liquid from the processing liquid circulation section 40 via the second processing liquid discharge section 54 and to supply a new processing liquid from the processing liquid supply section 39. You may make it do.

  Further, in the substrate liquid processing step, the processing liquid is continuously discharged from the start of the substrate liquid processing step to the middle of the process, for example, and the processing liquid is supplied, and thereafter the processing liquid is neither discharged nor supplied. Alternatively, the processing liquid is not discharged or supplied from the start of the substrate liquid processing step to the middle of the processing, for example, and the processing liquid is continuously discharged from the middle to the end and the processing liquid is supplied. You may do it.

  In another embodiment, the timing at which the on-off valve 60 is opened and measured by the concentration sensor 61 is a predetermined timing (for example, a substrate liquid processing step) while the on-off valve 58 is opened and the processing liquid is discharged. The time (frequency) for the treatment liquid to come into contact with the concentration sensor 61 can be further shortened (reduced).

  As another embodiment, for example, in the substrate liquid processing step, a plurality of silicon concentrations in the processing liquid to be discharged are measured based on a value measured a plurality of times by the concentration sensor 61 provided in the second processing liquid discharge unit 54. If the silicon concentration rise rate is calculated from the measured values and it is determined that the silicon concentration exceeds the predetermined concentration range during the processing of the substrate 8, the processing liquid is used so that the silicon concentration does not exceed the predetermined concentration range. The discharge amount to be discharged and the supply amount to which a new treatment liquid is supplied may be corrected.

  Further, as another embodiment, in order to further shorten (less) the time (frequency) that the processing liquid contacts the concentration sensor 61, the processing liquid is added to the concentration sensor 61 provided in the second processing liquid discharge unit 54. For example, an inert gas or pure water may be supplied to the concentration sensor 61 to remove the processing liquid so that the processing liquid does not remain while the liquid is not passed.

1 Substrate liquid processing device 7 Control unit 8 Substrate
38 Treatment liquid reservoir
39 Treatment liquid supply unit
40 Treatment liquid circulation section
41 Treatment liquid discharge part
61 Concentration sensor

Claims (7)

A processing liquid storage section for storing a processing liquid for processing the substrate;
A treatment liquid supply part for supplying the treatment liquid to the treatment liquid storage part;
A treatment liquid discharger for discharging the treatment liquid;
A concentration sensor for measuring the concentration in the treatment liquid;
A control unit that is connected to the concentration sensor and controls the processing liquid supply unit and the processing liquid discharge unit;
Have
The control unit discharges the processing liquid from the processing liquid discharge unit, causes the processing liquid supply unit to supply new processing liquid, and causes only a part of the processing liquid to contact the concentration sensor. An apparatus for processing a substrate liquid, wherein the concentration of the processing liquid is measured and the processing liquid brought into contact with the concentration sensor is less than the processing liquid discharged from the processing liquid discharge section.   2. The substrate liquid processing apparatus according to claim 1, wherein the control unit branches only a part of the processing liquid and contacts the concentration sensor to measure the concentration in the processing liquid. The control unit intermittently discharges the processing liquid from the processing liquid discharge unit at a predetermined timing, supplies a new processing liquid from the processing liquid supply unit, and the processing liquid at the predetermined timing. The concentration in the processing solution is measured by the concentration sensor,
2. The predetermined timing for measuring the concentration in the processing liquid by the concentration sensor is less frequent than the predetermined timing for discharging the processing liquid from the processing liquid discharging unit. The substrate liquid processing apparatus as described.   The processing liquid for processing the substrate stored in the processing liquid storage part is discharged from the processing liquid discharge part, and the new processing liquid is supplied from the processing liquid supply part, and only a part of the processing liquid is supplied to the concentration sensor. The concentration of the processing liquid in contact with the concentration sensor is less than that of the processing liquid discharged from the processing liquid discharger by measuring the concentration in the processing liquid. Substrate liquid processing method.   The substrate liquid processing method according to claim 4, wherein only a part of the processing liquid is branched and brought into contact with the concentration sensor to measure the concentration in the processing liquid. The processing liquid for processing the substrate stored in the processing liquid storage unit is discharged at a predetermined timing, and the new processing liquid is supplied from the processing liquid supply unit, and the processing liquid in the processing liquid at a predetermined timing The concentration of
5. The predetermined timing for measuring the concentration in the processing liquid by the concentration sensor is less frequent than the predetermined timing for discharging the processing liquid from the processing liquid discharge unit. The substrate liquid processing method as described. A processing liquid storage section for storing a processing liquid for processing the substrate;
A treatment liquid supply part for supplying the treatment liquid to the treatment liquid storage part;
A treatment liquid discharger for discharging the treatment liquid;
In a computer-readable storage medium storing a substrate liquid processing program for executing liquid processing of the substrate using a substrate liquid processing apparatus having a concentration sensor for measuring the concentration in the processing liquid,
The processing liquid is discharged from the processing liquid discharge section, and a new processing liquid is supplied from the processing liquid supply section, and only a part of the processing liquid is brought into contact with the concentration sensor so as to be contained in the processing liquid. A computer readable program storing a substrate liquid processing program characterized in that the processing liquid to be brought into contact with the concentration sensor is less than the processing liquid discharged from the processing liquid discharge section by measuring the concentration. Storage medium.

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