TW202112452A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

A substrate processing apparatus according to an aspect of the present disclosure is provided with an ozone water generation part, a substrate processing part, an ozone water supply line, a diluent supply line, and a control part. The ozone water generation part generates ozone water having a given ozone concentration. The substrate processing part processes a substrate. The ozone water supply line is interposed between the ozone water generation part and the substrate processing part and supplies ozone water to the substrate processing part. The diluent supply line is connected to the ozone water supply line to supply a diluent to the ozone water supply line. The control part controls the ozone water generation part, the substrate processing part, the ozone water supply line, and the diluent supply line. The control part controls the supply amount of the ozone water and the supply amount of a diluent supplied to the substrate processing part according to a recipe for processing the substrate.

Description

Substrate processing device and substrate processing method

The disclosed embodiments relate to substrate processing apparatuses and substrate processing methods.

Conventionally, a technique for processing substrates such as semiconductor wafers (hereinafter also referred to as wafers) with ozone water is well known (refer to Patent Document 1). [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 5779321

[The problem to be solved by the invention]

The present disclosure provides a technique capable of mixing treatments requiring high removal capacity and treatments not requiring high removal capacity in one substrate processing apparatus. [Technical means to solve the problem]

The substrate processing apparatus according to one aspect of the present disclosure includes an ozone water generating unit, a substrate processing unit, an ozone water supply line, a diluent supply line, and a control unit. The ozone water generating unit generates ozone water having the given ozone concentration. The substrate processing section processes the substrate. An ozone water supply line is provided between the ozone water generating unit and the substrate processing unit, and supplies the ozone water to the substrate processing unit. A diluent supply line is connected to the ozone water supply line, and the diluent is supplied to the ozone water supply line. The control unit controls the ozone water generating unit, the substrate processing unit, the ozone water supply line, and the diluent supply line. The control unit controls the supply amount of the ozone water and the diluent to the substrate processing unit in accordance with the recipe involved in the processing of the substrate. [Effects of Invention]

According to the present disclosure, it is possible to mix treatments that require high removal capacity and treatments that do not require high removal capacity in one substrate processing apparatus.

Hereinafter, referring to the attached drawings, the implementation mode of the substrate processing apparatus and the substrate processing method disclosed in this case will be described in detail. In addition, the present disclosure is not limited by the implementation types shown below. Furthermore, if the drawing is a schematic representation, it must be noted that the relationship between the dimensions of each element, the ratio of each element, etc. are different from reality. In addition, even between the drawings, there are cases where the relationship or ratio of dimensions is different from each other.

The technology for processing substrates such as semiconductor wafers (hereinafter also referred to as wafers) with ozone water is well known. In the liquid treatment caused by such ozone water, the higher the ozone concentration in the liquid, the higher the ability to remove the photoresist film or residue on the substrate.

On the other hand, like the process of removing residues after dry etching, there are cases where the process liquid does not necessarily require high removal ability. However, in the prior art, it is difficult to mix treatments that require high removal capacity and treatments that do not require high removal capacity in one substrate processing apparatus.

Because in the process of generating ozone water, it is very difficult to quickly change the ozone concentration in the liquid in accordance with the required processing capacity of each substrate.

Therefore, when processing substrates with ozone water, it is expected that the processing requiring high removal capability and the processing not requiring high removal capability can be mixed in one substrate processing apparatus and implemented.

[Summary of Substrate Processing System] First, referring to FIG. 1, the schematic configuration of the substrate processing system 1 according to the implementation mode will be described. FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to the embodiment. In addition, the substrate processing system 1 is an example of a substrate processing apparatus. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertical upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are installed adjacent to each other.

The carry-in and carry-out station 2 includes a wafer transfer cassette mounting part 11 and a conveying part 12. A plurality of wafer transfer cassettes C that accommodate a plurality of substrates in a horizontal state, which are semiconductor wafers W (hereinafter, referred to as wafers W) in the implementation type, are placed on the wafer transfer cassette mounting portion 11.

The conveying unit 12 is provided adjacent to the wafer transfer cassette mounting unit 11, and includes a substrate conveying device 13 and a receiving unit 14 inside. The substrate transport device 13 includes a wafer holding mechanism that holds the wafer W. Furthermore, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfer the wafer W between the wafer transfer cassette C and the receiving unit 14 using a wafer holding mechanism. .

The processing station 3 is provided adjacent to the conveying unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The processing unit 16 is an example of a substrate processing unit. The plural processing units 16 are arranged on both sides of the conveying unit 15 in a row.

The conveying unit 15 includes a board conveying device 17 inside. The substrate conveying device 17 includes a wafer holding mechanism that holds the wafer W. Furthermore, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfer the wafer W between the receiving unit 14 and the processing unit 16 using a wafer holding mechanism.

The processing unit 16 performs specific substrate processing on the wafer W conveyed by the substrate conveying device 17. The details of such processing unit 16 will be described later.

Furthermore, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the memory unit 19.

In addition, such a program is recorded in a storage medium readable by a computer, even if it is installed in the storage unit 19 of the control device 4 from the storage medium. As a storage medium that can be read by a computer, for example, there are hard disk (HD), floppy disk (FD), compact disk (CD), magneto-optical disk (MO), memory card, etc.

In addition, the substrate processing system 1 includes an ozone water generating unit 5. The ozone water generating unit 5 generates ozone water having the applied ozone concentration, and supplies the generated ozone water to the processing unit 16. The details of such an ozone water generating unit 5 will be described later.

In the substrate processing system 1 configured as described above, first, the substrate transport device 13 carried in the unloading station 2 takes out the wafer W from the wafer transfer cassette C placed on the wafer transfer cassette mounting portion 11, and takes out the wafer W The wafer W is placed in the receiving unit 14. The wafer W placed on the receiving unit 14 is taken out from the receiving unit 14 by the substrate conveying device 17 of the processing station 3 and carried into the processing unit 16.

After the wafer W carried into the processing unit 16 is processed by the processing unit 16, it is carried out from the processing unit 16 by the substrate conveying device 17, and is placed on the receiving unit 14. Then, the processed wafer W placed in the receiving unit 14 is returned to the wafer transfer cassette C of the wafer transfer cassette mounting unit 11 by the substrate transfer device 13.

[Piping configuration of substrate processing system] Next, the piping structure of the substrate processing system 1 will be described with reference to FIG. 2. FIG. 2 is a schematic diagram showing the piping configuration of the substrate processing system 1 according to the embodiment.

In the example of FIG. 2, for the case where six processing areas X including one processing unit 16 are arranged. In addition, for ease of understanding, the piping configuration in the processing area X other than the processing area X shown in the lower left is omitted from the illustration.

As shown in FIG. 2, the substrate processing system 1 according to the embodiment includes an ozone water generating unit 5, an ozone water supply line 6, a diluent supply line 7, and a processing unit 16.

The ozone water generating unit 5 generates ozone water having the given ozone concentration. The "concentration of ozone to be administered" is, for example, the concentration of ozone to remove (peel off) the photoresist film formed on the wafer W (see FIG. 1), and it is, for example, 100 mg/L to 400 mg/L.

The ozone water generating unit 5 has a tank body 21, a pure water supply line 22, and an ozone gas supply line 23. The tank body 21 generates ozone water having an imparted ozone concentration inside, and at the same time stores the generated ozone water.

The pure water supply line 22 supplies DIW (DeIonized Water) used as a raw material of ozone water to the tank body 21. The DIW supplied from such a pure water supply line 22 is an example of pure water. The pure water supply line 22 is configured by sequentially connecting a first line 24, a tank body 25, and a second line 26 in series.

The first pipeline 24 supplies DIW to the tank body 25. Such a first pipeline 24 has a DIW supply source 22a, a valve body 22b, a back pressure valve 22c, and a flow meter 22d in this order from the upstream. The DIW supply source 22a is, for example, a tank for storing DIW.

The back pressure valve 22c adjusts the flow rate of DIW supplied to the tank 25 based on the flow rate of DIW measured by the flow meter 22d. That is, the back pressure valve 22c performs feedback control based on the flow rate of the DIW measured by the flow meter 22d.

A merging part 28 is provided on the downstream side of the flow meter 22d in the first pipeline 24. Furthermore, an acid-based chemical solution supply line 27 is connected to such a junction 28.

The acid-based chemical liquid supply line 27 supplies the first line 24 of the pure water supply line 22 with acid-based chemical liquids such as organic acids (citric acid, acetic acid, etc.), hydrochloric acid, and sulfuric acid. In the implementation mode, by supplying an acid-based chemical solution to the DIW to lower the pH value of the DIW, the concentration of ozone dissolved in such DIW can be increased.

The acid-based chemical liquid supply line 27 has an acid-based chemical liquid supply source 27a, a valve body 27b, a back pressure valve 27c, and a flow meter 27d in order from the upstream. The acid-based chemical liquid supply source 27a is, for example, a cabinet or a circulation line that can generate an acid-based chemical liquid.

The back pressure valve 27c adjusts the flow rate of the acid-based chemical liquid supplied to the first line 24 based on the flow rate of the acid-based chemical liquid measured by the flow meter 27d. That is, the back pressure valve 27c performs feedback control based on the flow rate of the acid-based chemical liquid measured by the flow meter 27d.

On the downstream side of the confluence part 28 of the first pipeline 24, a removal unit 57, a filter 29, and a concentration meter 30 are provided. The removing unit 57 removes the dissolved gas contained in the DIW mixed with the acid-based chemical liquid. The removal unit 57 in this way removes the dissolved gas contained in the DIW mixed with the acid-based chemical solution, so that the ozone gas can be efficiently dissolved in the DIW mixed with the acid-based chemical solution.

The filter 29 removes contaminants such as DIW circulating in the first line 24 or particulates contained in the acid-based chemical liquid supply line 27. The concentration meter 30 measures the pH value of the DIW circulating in the first line 24.

In addition, the DIW whose pH has been adjusted by mixing with the acid-based chemical in the confluence part 28 is stored in the tank 25. The second pipeline 26 is connected to the bottom of the tank 25 in this way.

Furthermore, the tank body 25 is connected to the drain part DR via the valve body 31. Accordingly, the control part 18 (refer to FIG. 1) can control the valve body 31 when replacing the DIW in the tank body 25, and discharge the DIW in the tank body 25 to the discharge part DR.

The second pipeline 26 is provided between the tank body 25 and the tank body 21, and has a mixing section 37 and a pump 38 in this order from the upstream side. Furthermore, an ozone gas supply line 23 is connected to the mixing unit 37.

The ozone gas supply line 23 supplies ozone gas to the mixing unit 37. The ozone gas supply line 23 has an ozone gas generator 32, a filter 33, a valve body 34, and a check valve 35 in this order from the upstream side.

The ozone gas generating unit 32 generates ozone gas from oxygen by a conventional technique. The oxygen used as the raw material of the ozone gas is supplied from the oxygen supply line 36 to the ozone gas generating unit 32. The oxygen supply line 36 has an oxygen supply source 36a, a back pressure valve 36b, and a valve body 36c. The oxygen supply source 36a is, for example, a tank that stores oxygen.

In addition, although not shown in FIG. 2, the ozone gas generating part 32 is connected to a cooling water supply part for supplying cooling water and a cooling water discharge part for discharging used cooling water.

The filter 33 removes pollutants such as particulates contained in the ozone gas circulating through the ozone gas supply line 23. The check valve 35 prevents the ozone gas from flowing back from the mixing unit 37.

The mixing unit 37 injects the ozone gas supplied from the ozone gas supply line 23 as bubbles into the DIW liquid flowing in the second line 26 to dissolve the ozone in the DIW. The mixing unit 37 can dissolve ozone in the DIW whose pH has been adjusted by using, for example, a bubbling method using a bubbler with pores, or a spraying method in which ozone gas is blown into a high-speed water stream.

The pump 38 is a mixed liquid in which the boosted ozone is dissolved in the DIW, and is supplied to the tank 21. In this way, by using the boosted ozone to be dissolved in the DIW mixed liquid, ozone water with the given ozone concentration can be efficiently generated.

An ozone recovery line 41 is connected to the upper part of the tank body 21. In this way, the ozone recovery line 41 recovers the ozone gas that is not dissolved in the DIW from the tank 21. According to this, the ozone gas that is excessively pressurized in the tank body 21 leaks from the tank body 21.

The ozone recovery line 41 is connected to the gas-liquid separation trap 43 via a back pressure valve 42. By controlling the back pressure valve 42, the internal pressure of the boosted tank body 21 can be adjusted. The gas-liquid separation trap 43 separates the ozone water from the ozone gas recovered through the ozone recovery line 41.

In addition, the gas-liquid separation trap 43 is connected to the drain DR via the valve body 44. According to this, the control unit 18 controls such a valve body 44 so that the ozone water separated from the ozone gas can be discharged to the discharge unit DR.

An ozone recovery line 45 is connected to the upper part of the gas-liquid separation trap 43. Then, the ozone gas from which the ozone water is separated is supplied to the ozone gas removal unit 46 via such an ozone recovery line 45, and is rendered harmless in the ozone gas removal unit 46.

In addition, the harmless ozone gas is discharged to the outside from the exhaust part EXH. Furthermore, a check valve 47 is provided in the ozone recovery line 45. In addition, although not shown in FIG. 2, the ozone gas removal part 46 is connected to a cooling water supply part for supplying cooling water and a cooling water discharge part for discharging used cooling water.

Furthermore, the ozone water generating unit 5 according to the embodiment is connected to the ozone gas supply line 23 and the ozone recovery line 45 via the valve body 48. Accordingly, the control unit 18 is unable to generate high-quality ozone gas when the ozone gas generating unit 32 is activated, etc. By setting the valve body 48 to the open state, the low-quality ozone gas can be used in the ozone gas removal unit. 46 Harmless.

Therefore, according to the implementation type, since only high-quality ozone gas can be supplied to the mixing section 37, good-quality ozone water can be generated.

The ozone water supply line 6 is provided between the ozone water generating part 5 and the processing unit 16. The ozone water supply line 6 in this way supplies the ozone water having the given ozone concentration generated by the ozone water generating part 5 to the processing unit 16.

The ozone water supply line 6 is provided with a back pressure valve 51, a filter 52, a flow meter 53, a heater 54, a concentration meter 55, and a valve body 56 in this order from the upstream side.

The back pressure valve 51 reduces the pressure of the ozone water boosted in the tank body 21. According to this, it is possible to prevent the equipment installed on the downstream side of the back pressure valve 51 from being damaged by the boosted ozone water. Furthermore, by controlling the back pressure valve 51, the internal pressure of the tank 21 to be boosted can be adjusted.

The filter 52 removes pollutants such as particles contained in the ozone water circulating through the ozone water supply line 6. The heater 54 heats the ozone water circulating through the ozone water supply line 6 to a given temperature (for example, 80°C). According to this, the heated ozone water can be supplied to the processing unit 16.

The concentration meter 55 measures the ozone concentration of the ozone water circulating in the ozone water supply line 6. The control unit 18 adjusts the ozone concentration of the ozone water generated in the ozone water generating unit 5 based on the ozone concentration of the ozone water measured by the concentration meter 55.

For example, the control unit 18 increases the flow rate of the acid-based chemical solution supplied from the acid-based chemical solution supply line 27 when the ozone concentration of the ozone water measured by the concentration meter 55 is lower than the administered ozone concentration.

Accordingly, since the pH value of the DIW supplied from the pure water supply line 22 decreases, the ozone concentration of the ozone water generated in the ozone water generating unit 5 can be increased.

Furthermore, even if the ozone concentration of the ozone water measured by the concentration meter 55 is lower than the given ozone concentration, the control unit 18 increases at least one of the flow rate and the concentration of the ozone gas supplied from the ozone gas supply line 23 can.

Accordingly, since the amount of ozone molecules mixed in the mixing section 37 increases, the ozone concentration of the ozone water generated in the ozone water generating section 5 can be increased.

On the other hand, when the ozone concentration of the ozone water measured by the concentration meter 55 is higher than the administered ozone concentration, the control unit 18 reduces the flow rate of the acid-based chemical solution supplied from the acid-based chemical solution supply line 27.

Accordingly, since the pH value of the DIW supplied from the pure water supply line 22 increases, the ozone concentration of the ozone water generated in the ozone water generating unit 5 can be reduced.

Furthermore, the control unit 18 reduces at least one of the flow rate and the concentration of the ozone gas supplied from the ozone gas supply line 23 when the ozone concentration of the ozone water measured by the concentration meter 55 is higher than the supplied ozone concentration.

Accordingly, since the amount of ozone molecules mixed in the mixing section 37 is reduced, the ozone concentration of the ozone water generated in the ozone water generating section 5 can be reduced.

In this way, in the embodiment, the ozone concentration of the ozone water generated in the ozone water generating unit 5 is feedback controlled based on the ozone concentration of the ozone water measured by the concentration meter 55. According to this, the ozone water of the given ozone concentration can be stabilized and supplied to the processing unit 16.

In the ozone water supply line 6 on the downstream side of the valve body 56, there are a plurality of parallel pipelines 6 a arranged in parallel with each other, and a plurality of branch pipelines 6 b that branch from the parallel pipelines 6 a into each processing unit 16. In the example of FIG. 3, three parallel pipelines 6a are provided, and each parallel pipeline 6a supplies ozone water to the two processing units 16 respectively.

The branch pipeline 6b branched from the parallel pipeline 6a has a back pressure valve 61, a flow meter 62, a valve body 63, and a merging part 64 in this order from the upstream side. The back pressure valve 61 adjusts the flow rate of ozone water flowing in the branch line 6b based on the flow rate of ozone water measured by the flow meter 62. That is, the back pressure valve 61 performs feedback control based on the flow rate of ozone water measured by the flow meter 62.

The confluence part 64 is connected to the diluent supply line 7. The diluent supply line 7 has a DIW supply source 7a, a valve body 7b, a back pressure valve 7c, a flow meter 7d, and a heater 7e in order from the upstream.

The DIW supply source 7a is, for example, a tank for storing DIW. An example of DIW diluent stored in such DIW supply source 7a. In addition, the diluent involved in the embodiment is not limited to DIW, as long as it is a medicinal solution that can dilute ozone water.

The back pressure valve 7c adjusts the flow rate of DIW flowing through the diluent supply line 7 based on the flow rate of DIW measured by the flow meter 7d. That is, the back pressure valve 7c performs feedback control based on the flow rate of the DIW measured by the flow meter 7d.

The heater 7e adjusts the temperature of the DIW circulating in the diluent supply line 7 according to an instruction from the control unit 18. Accordingly, the diluent supply line 7 can selectively supply the heated DIW (hereinafter also referred to as Hot-DIW) and the room temperature DIW (hereinafter also referred to as RT-DIW) to the confluence part 64.

Here, in the embodiment, the control unit 18 controls the supply amount of ozone water and diluent to the processing unit 16 in response to the recipe involved in the processing of the wafer W.

Specifically, the control unit 18 controls the supply of ozone water supplied from the ozone water supply line 6 in response to the recipe for the processing of the wafer W carried into the liquid processing unit 80 (see FIG. 3) in the processing unit 16. And the amount of DIW supplied from the diluent supply line 7.

For example, in the case of performing the residue removal process (hereinafter, also referred to as post-etch cleaning) of the dry-etched wafer W, the process liquid does not require high removal capability. Therefore, when the control unit 18 selects the recipe for the post-etching and cleaning, the confluence unit 64 generates a processing solution mixed with ozone water and RT-DIW, and processes the wafer W with such a processing solution.

Furthermore, in the case of performing a residue removal process (hereinafter, also referred to as post-ashing cleaning) of the wafer W after the photoresist has been ashed, the treatment liquid needs to have a higher removal ability than the post-etching cleaning.

Therefore, when the control unit 18 selects the recipe for the post-ashing cleaning, the confluence unit 64 generates a processing solution mixed with ozone water and Hot-DIW, and processes the wafer W with such a processing solution.

Furthermore, in the case of performing the removal process of the photoresist film formed on the wafer W (hereinafter also referred to as photoresist removal), the treatment liquid needs to have a higher removal ability than the post-ashing cleaning.

Therefore, the control unit 18 does not dilute the ozone water with DIW when selecting the recipe for photoresist removal, and treats the wafer W with ozone water having the given ozone concentration.

In addition, the ozone concentration of the initial ozone water is not limited to the ozone concentration that can remove the photoresist film formed on the wafer W. Even in the post-ashing cleaning, the polymer residue formed on the slope or edge can be removed. The ozone concentration of the membrane can also be used.

In this way, in the implementation type, the amount of ozone water and diluent supplied to the wafer W is controlled in accordance with the recipe involved in the processing of the wafer W. According to this, it is possible to mix treatments that require high removal capability (for example, photoresist removal) and treatments that do not require high removal capability (for example, post-etching and cleaning) in one substrate processing system 1 while being implemented.

Furthermore, in the implementation type, the temperature of the diluent (DIW) is controlled according to the recipe involved in the processing of the wafer W, and the temperature of the mixed liquid of the ozone water and the diluent is adjusted. According to this, the wafer W can be processed with a processing liquid having a variety of processing capabilities.

Furthermore, in the embodiment, it is preferable that the ozone water generated in the ozone water generating unit 5 has an ozone concentration that can remove the photoresist film formed on the wafer W, for example. Accordingly, in addition to processing that does not require high removal capability, photoresist removal processing that requires high removal capability can also be implemented in the same substrate processing system 1.

Furthermore, in the embodiment, in addition to the ozone water supply line 6, the IPA supply line 8 is also connected to the processing unit 16. Such an IPA supply line 8 supplies IPA (isopropyl alcohol) to the wafer W carried into the processing unit 16.

The IPA supply line 8 has an IPA supply source 8a, a valve body 8b, a back pressure valve 8c, and a flow meter 8d in this order from the upstream side. The IPA supply source 8a is, for example, a tank for storing IPA.

The back pressure valve 8c adjusts the flow rate of IPA flowing through the IPA supply line 8 based on the flow rate of IPA measured by the flow meter 8d. That is, the back pressure valve 8c performs feedback control based on the flow rate of the IPA measured by the flow meter 8d.

By using such an IPA supply line 8, the control unit 18 can supply ozone water and IPA to the wafer W at the same time. In this way, by adding IPA to the ozone water, the ozone contained in the ozone water can be decomposed by itself to generate OH radicals.

Therefore, according to the implementation pattern, the wafer W can be processed by the ozone water containing OH radicals, which has a higher processing capacity than the ozone water alone. The specific dispense method for such IPA will be described later.

Furthermore, in the embodiment, it is better to process the wafer W in such a way that the processing units 16 connected to the same parallel pipeline 6a discharge ozone water without overlapping each other (so-called exclusive control). According to this, the amount of ozone water produced in the ozone water producing unit 5 can be reduced.

For example, when the discharge flow rate of ozone water in one processing unit 16 is 2L/min, and the above-mentioned exclusive control is not implemented, the generation amount of ozone water required for 50% of the ozone water generating unit becomes 2L/min×6( The number of processing units 16)=12L/min.

On the other hand, in the implementation mode, by implementing the above-mentioned exclusive control, the production amount of ozone water required in the ozone water production section 5 can be reduced to 2L/min×3 (the number of parallel pipelines 6a)=6L/ min.

In addition, in the embodiment, after the ozone water is generated by the ozone water generating unit 5, the ozone water is heated by the heater 54 of the ozone water supply line 6. According to this, it is possible to efficiently generate ozone water having the given ozone concentration, compared to the case where the temperature of the ozone water generating unit 5 is raised when the ozone water is generated.

Since a lot of the dissolved ozone is degassed when the ozone water is heated, when the temperature is raised when the ozone water is generated in the ozone water generating part 5, it is necessary to take the part of the ozone gas that is degassed into consideration.

The description of other piping configurations in the substrate processing system 1 will continue. The processing unit 16 is connected to the discharge part DR via a discharge line 65. According to this, the processing liquid used for the processing of the wafer W in the processing unit 16 can be discharged to the discharge part DR.

Furthermore, in the embodiment, the parallel pipeline 6 a is connected to the discharge part DR via the back pressure valve 66. According to this, the ozone water that is not used in the processing unit 16 can be discharged to the discharge part DR.

[Construction of processing unit] Next, the configuration of the processing unit 16 will be described with reference to FIGS. 3 and 4. FIG. 3 is a schematic diagram showing a configuration example of the processing unit 16 according to the embodiment, and FIG. 4 is a schematic cross-sectional view showing a configuration example of the liquid supply unit 90 according to the embodiment.

As shown in FIG. 3, the processing unit 16 includes a chamber 70, a liquid processing unit 80, a liquid supply unit 90, and a recovery cup 100.

The chamber 70 houses the liquid processing unit 80, the liquid supply unit 90 and the recovery cup 100. An FFU (Fan Filter Unit) 71 is installed on the ceiling of the chamber 70. The FFU71 forms a downward flow in the chamber 70.

The liquid processing section 80 includes a holding section 81, a support section 82, and a driving section 83, and applies liquid processing to the wafer W placed on it. The holding portion 81 holds the wafer W horizontally. The pillar portion 82 is a member extending in the vertical direction, the base end portion is rotatably supported by the driving portion 83, and the front end portion supports the holding portion 81 horizontally. The driving part 83 rotates the pillar part 82 about a vertical axis.

In this way, the liquid processing unit 80 rotates the supporting unit 81 supported by the supporting unit 82 by using the driving unit 83 to rotate the supporting unit 82, and thereby rotates the wafer W held by the supporting unit 81.

On the upper surface of the holding portion 81 provided in the liquid processing portion 80, a holding member 81a that holds the wafer W from the side is provided. The wafer W is held horizontally by the holding member 81a in a state slightly spaced apart from the upper surface of the holding portion 81. In addition, the wafer W is held by the holding portion 81 in a state where the surface on which the substrate processing is performed faces upward.

The liquid supply unit 90 supplies ozone water and IPA to the wafer W. The liquid supply unit 90 includes nozzles 91a and 91b, an arm 92 that horizontally supports the nozzles 91a and 91b, and a swing elevating mechanism 93 that swings and raises the arm 92.

The nozzle 91a is an example of an ozone water discharge nozzle, and is connected to the branch line 6b of the ozone water supply line 6. As shown in FIG. 4, a discharge port 91aa is formed in the nozzle 91a. In the liquid supply part 90, the discharge port 91aa may be arranged directly above the center part of the wafer W.

Accordingly, the liquid supply unit 90 can discharge the ozone water supplied from the ozone water supply line 6 to the center of the wafer W. Then, the ozone water discharged to the center of the wafer W diffuses from the center to the edge due to the rotation of the wafer W.

The nozzle 91b is an example of an IPA discharge nozzle, and is connected to the IPA supply line 8. A plurality of discharge ports 91ba are formed in the nozzle 91b. The liquid supply unit 90 may arrange the plurality of discharge ports 91ba from the center of the wafer W in the radial direction.

Accordingly, the liquid supply unit 90 can discharge the IPA supplied through the IPA supply line 8 in the radial direction of the wafer W. In addition, the IPA discharged in the radial direction of the wafer W spreads over the entire wafer W by the rotation of the wafer W.

In this way, in the embodiment, it is divided into a nozzle 91a arranged in the center of the wafer W and a nozzle 91b arranged along the radial direction of the wafer W to discharge ozone water and water to the wafer W. IPA.

Here, the OH radicals generated when ozone water and IPA are mixed lose their activation in a short time. Therefore, assuming that both ozone water and IPA are ejected from two nozzles arranged in the center of the wafer W, the OH radicals generated in the center may lose activity until the ozone water reaches the edge.

On the other hand, in the embodiment, it is divided into a nozzle 91a arranged in the center part and a nozzle 91b arranged along the radial direction, and ozone water and IPA are discharged to the wafer W, which can be used in the wafer W. It fully mixes ozone water and IPA. Accordingly, in the implementation mode, OH radicals can be generated in the entire wafer W.

Therefore, if the implementation type is adopted, since the processing caused by the OH radicals can be performed evenly on the entire surface of the wafer W, the processing capacity of the entire wafer W can be higher than that of ozone water alone.

In addition, in the above example, although the ozone water is discharged from the nozzle 91a arranged in the center part and the IPA is discharged from the nozzle 91b arranged along the radial direction is shown, even if the IPA is discharged from the nozzle 91a, the IPA is discharged from the nozzle 91a. The nozzle 91b may discharge ozone water.

Even in this case, since ozone water and IPA can be mixed on the entire surface of the wafer W, OH radicals can be mixed on the entire surface of the wafer W.

In addition, even if both ozone water and IPA are discharged from the nozzle 91b arrange|positioned along the radial direction. FIG. 5 is a schematic cross-sectional view showing another configuration example of the liquid supply unit 90 according to the embodiment.

As shown in FIG. 5, IPA is discharged from the discharge port 91ba provided in the nozzle 91b as a long nozzle, and ozone water is discharged from the discharge port 91bb provided close to such a discharge port 91ba.

In addition, by directing the discharge port 91ba and the discharge port 91bb toward the mixing area M between the nozzle 91b and the wafer W, ozone water and IPA can be mixed in such a mixing area M.

Accordingly, since the OH radicals generated in the mixing region M can be quickly supplied to the wafer W, it is possible to implement a higher processing capacity than ozone water alone on the entire surface of the wafer W.

The liquid supply unit 90 according to the embodiment has a DIW discharge nozzle (not shown) and an SC1 discharge nozzle (not shown) in addition to the above-mentioned nozzles 91a and 91b. The DIW discharge nozzle can discharge DIW as an example of a rinse liquid to the wafer W. The SC1 discharge nozzle can discharge SC1 (a mixed liquid of ammonia and hydrogen peroxide water) on the surface of the wafer W to prevent re-adhesion of particles on the surface of the wafer W.

In addition, in the processing unit 16 of the embodiment type, although the example in which the nozzles 91a and 91b are arranged above (the surface side) of the wafer W is shown, even if the nozzles 91a and 91b are arranged below the wafer W ( The back side) can also be used.

Return to the description of Figure 3. The recovery cup 100 is arranged to surround the holding portion 81, and the processing liquid scattered from the wafer W is captured by the rotation of the holding portion 81. A drain port 101 is formed at the bottom of the recovery cup 100, and the processing liquid captured by the recovery cup 100 is discharged from the drain port 101 to the outside of the processing unit 16.

Furthermore, an exhaust port 102 for exhausting the gas supplied from the FFU 71 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 100.

[Various Modifications] Next, the piping structure of the substrate processing system 1 according to various modifications of the implementation type will be described with reference to FIGS. 6 to 8. FIG. 6 is a schematic diagram showing the piping configuration of the substrate processing system 1 according to Modification 1 of the embodiment.

As shown in FIG. 6, the substrate processing system 1 according to Modification Example 1 has a piping configuration of the ozone water supply line 6 different from the embodiment. Here, in the following examples, the same symbols are assigned to the same parts as in the embodiment, and detailed descriptions are omitted.

In the substrate processing system 1 according to Modification 1, the plurality of parallel pipelines 6 a are connected to the ozone water generating part 5 instead of the drain part DR. Specifically, the plural parallel pipelines 6 a are connected to the tank body 25 of the ozone water generating unit 5 via the circulation pipeline 9.

Accordingly, the ozone water that is not used in the processing unit 16 can be returned to the ozone water generating part 5 via the circulation line 9. Therefore, according to Modification 1, since unused ozone water can be utilized to generate more ozone water, ozone water can be efficiently generated in the ozone water generation unit 5.

In addition, a valve body 67 and a back pressure valve 68 are provided in the circulation line 9 in this order from the upstream side. Furthermore, since the solution stored in the tank 25 becomes a solution containing ozone, the exhaust gas from such a tank 25 is supplied to the ozone gas removal part 46 via the line 58 and is rendered harmless.

In addition, in the example of FIG. 6, only the case where the ozone water not used in the processing unit 16 is returned to the ozone water generating part 5 is shown. On the other hand, even if a branch line (not shown) that is branched from the circulation line 9 to the discharge part DR is provided to return the ozone water that is not used in the processing unit 16 to the ozone water generation part 5, and The discharge from the discharge part DR can be switched according to the situation.

FIG. 7 is a schematic diagram showing the piping configuration of the substrate processing system 1 according to Modification 2 of the embodiment. In addition, in FIG. 7, detailed illustration of the ozone water generating unit 5 is omitted. As shown in FIG. 7, the structure of the branch line 6b of the ozone water supply line 6 of the substrate processing system 1 which concerns on the modification 2 is different from that of the modification 1.

Specifically, one parallel pipeline 6a is first branched from one branch pipeline 6b1, and the branch pipeline 6b1 is divided into branch pipelines 6b2 connected to the processing units 16 of each. Furthermore, in Modification 2, the heater 54 is not provided on the upstream side of the valve body 56 of the ozone water supply line 6, and the heater 54A is provided in the branch line 6b1 of each.

In the second modification as described above, by heating the ozone water with the heater 54A, the heated ozone water can be supplied to the processing unit 16.

Furthermore, in Modification 2, it is possible to return to the ozone water generating unit 5 without raising the temperature of ozone water that is not used in the processing unit 16. Accordingly, when the unused ozone water is used to generate ozone water, the temperature rise of such ozone water can be suppressed.

Therefore, according to Modification 2, ozone water can be produced more efficiently in the ozone water production unit 5.

FIG. 8 is a schematic diagram showing the piping configuration of the substrate processing system 1 according to Modification 3 of the embodiment. In addition, in FIG. 8, the illustration of the processing area X in which the processing unit 16 and the like are provided is omitted.

As shown in FIG. 8, the ozone water generating unit 5 according to Modification 3 is connected to the second pipeline 26, and a mixing unit 37 is provided on the downstream side of the pump 38. According to this, since ozone can be dissolved in the DIW boosted by the pump 38, ozone water having the given ozone concentration can be efficiently generated.

The substrate processing apparatus (substrate processing system 1) according to the embodiment includes an ozone water generating unit 5, a substrate processing unit (processing unit 16), an ozone water supply line 6, a diluent supply line 7, and a control unit 18. The ozone water generating unit 5 generates ozone water having the given ozone concentration. The substrate processing section (processing unit 16) processes the substrate (wafer W). The ozone water supply line 6 is provided between the ozone water generating unit 5 and the substrate processing unit (processing unit 16), and supplies ozone water to the substrate processing unit (processing unit 16). The diluent supply line 7 is connected to the ozone water supply line 6 and supplies the diluent to the ozone water supply line 6. The control unit 18 controls the ozone water generating unit 5, the substrate processing unit (processing unit 16 ), the ozone water supply line 6 and the diluent supply line 7. The control unit 18 controls the supply of ozone water and diluent to the substrate processing unit (processing unit 16) in accordance with the recipe involved in the processing of the substrate (wafer W). According to this, it is possible to perform a process requiring a high removal capacity and a treatment not requiring a high removal capacity in one substrate processing system 1 while mixing.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone water generating unit 5 has a tank 21, a pure water supply line 22, and an ozone gas supply line 23. The pure water supply line 22 is connected to the tank body 21 and supplies pure water (DIW) to the tank body 21. The ozone gas supply line 23 is connected to the pure water supply line 22 and supplies ozone gas to the pure water supply line 22. The control unit 18 mixes pure water (DIW) and ozone gas in the pure water supply line 22, and the mixed liquid of pure water (DIW) and pure water gas is pressurized in the tank 21 to generate ozone water. According to this, it is possible to efficiently generate ozone water having the given ozone concentration.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the pure water supply line 22 is supplied with an acid-based chemical liquid through the acid-based chemical liquid supply line 27. In this way, the pH value of DIW, which is the raw material of ozone water, can be lowered.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone water supply line 6 has a concentration meter 55 that measures the ozone concentration of the ozone water. The control unit 18 adjusts the flow rate of the acid-based chemical liquid supplied to the pure water supply line 22 based on the ozone concentration of the ozone water measured by the concentration meter 55. According to this, the ozone water of the given ozone concentration can be stabilized and supplied to the processing unit 16.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone water supply line 6 has a concentration meter 55 that measures the ozone concentration of the ozone water. The control unit 18 adjusts at least one of the flow rate and the concentration of the ozone gas supplied to the pure water supply line 22 based on the ozone concentration of the ozone water measured by the concentration meter 55. According to this, the ozone water of the given ozone concentration can be stabilized and supplied to the processing unit 16.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the substrate processing section (processing unit 16) has an ozone water ejection nozzle (nozzle 91a) and an IPA ejection nozzle (nozzle 91b). The ozone water discharge nozzle (nozzle 91a) is connected to the ozone water supply line 6, and discharges ozone water or a mixed solution of ozone water and diluent to the substrate (wafer W). The IPA discharge nozzle (nozzle 91b) discharges IPA to the substrate (wafer W). Accordingly, the wafer W can be processed by the ozone water containing OH radicals, which has a higher processing capacity than the ozone water monomer.

Furthermore, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the IPA discharge nozzle (nozzle 91b) is a long strip formed by arranging a plurality of discharge ports 91ba in the radial direction of the substrate (wafer W) nozzle. According to this, it is possible to perform processing on the entire wafer W with a processing capacity higher than that of ozone water alone.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the diluent supply line 7 has a heater 7e for heating the diluent (DIW). The control unit 18 controls the heater 7e in response to the recipe involved in the processing of the substrate (wafer W) to adjust the temperature of the mixture of ozone water and the diluent. According to this, it is possible to selectively supply the heated DIW and the DIW at room temperature to the confluence part 64.

Furthermore, the substrate processing apparatus (substrate processing system 1) according to the embodiment further includes a circulation line 9 for returning ozone water that is not used in the substrate processing section (processing unit 16) to the ozone water generating section 5. According to this, since the unused ozone water can be utilized to generate more ozone water, the ozone water generation part 5 can efficiently generate ozone water.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the ozone water supply line 6 has a back pressure valve 51. According to this, it is possible to prevent the equipment installed on the downstream side of the back pressure valve 51 from being damaged by the boosted ozone water.

[Order of Substrate Processing] Next, the sequence of substrate processing involved in the implementation mode will be described with reference to FIGS. 9 and 10. FIG. 9 is a flowchart showing the sequence of substrate processing performed by the substrate processing system 1 according to the embodiment.

First, the control unit 18 controls the ozone water generating unit 5 to perform an ozone water generating process for generating ozone water having an applied ozone concentration (step S101). The details of such ozone water generation processing will be described later.

Next, the control unit 18 controls the loading/unloading station 2 to read the wafer transfer cassette ID or the wafer ID of the wafer W to be processed (step S102). Each of the wafer transfer cassette ID or the wafer ID is individually registered, for example, in a wafer transfer cassette C that accommodates a plurality of wafers W and can be transported, and the wafer transfer cassette C can be loaded into the wafer transfer cassette. Reading is performed when the unit 11 is set.

Next, the control unit 18 discriminates the process of the wafer W based on the read cassette ID or wafer ID (step S103). Furthermore, it is judged that the process of the wafer W is the post-etching and cleaning (step S104, post-etching and cleaning), and the control unit 18 selects the recipe for the post-etching and cleaning (step S105).

Next, the control unit 18 controls the ozone water supply line 6 and the diluent supply line 7 to generate a treatment liquid that mixes ozone water and RT-DIW (step S106). Then, the control unit 18 controls the processing unit 16 to perform liquid processing of the wafer W with such a processing liquid (step S107).

In addition, in the processing of steps S105 to S107, even if the ratio of ozone water and RT-DIW itself is set in the recipe in advance. Furthermore, in the processing of steps S105 to S107, even if the ozone concentration of ozone water is set in the recipe in advance, feedback control of the ratio of ozone water and RT-DIW can be performed based on the ozone concentration measured by the concentration meter 55.

Next, the control unit 18 controls the DIW discharge nozzle of the liquid supply unit 90 to perform the flushing process of the wafer W by DIW (step S108). Then, the control unit 18 controls the SC1 discharge nozzle of the liquid supply unit 90 to perform the re-adhesion prevention process of the wafer W by SC1 (step S109).

Next, the control unit 18 controls the DIW discharge nozzle of the liquid supply unit 90 to perform the flushing process of the wafer W by DIW (step S110). Then, the control unit 18 controls the liquid processing unit 80 to perform drying processing (for example, spin drying) of the wafer W (step S111). When such step S111 ends, a series of processing is completed.

Furthermore, it is judged that the process of wafer W is post-ashing cleaning (step S104, post-ashing cleaning), and the control unit 18 selects a recipe for post-ashing cleaning (step S112).

Next, the control unit 18 controls the ozone water supply line 6 and the diluent supply line 7 to generate a treatment liquid that mixes ozone water and Hot-DIW (step S113). Then, the control unit 18 controls the processing unit 16 to perform liquid processing of the wafer W with such a processing liquid (step S114), and then proceeds to the processing of step S108.

In addition, in the processing of steps S112 to S114, even if the ratio of ozone water and Hot-DIW itself is set in the recipe in advance. Furthermore, in the processing of steps S112 to S114, even if the ozone concentration of ozone water is set in the recipe in advance, feedback control of the ratio of ozone water and Hot-DIW can be performed based on the measured ozone concentration by the concentration meter 55.

Furthermore, it is judged that the process of wafer W is photoresist removal (step S104, photoresist removal), and the control unit 18 selects a recipe for photoresist removal (step S115).

Next, the control unit 18 controls the ozone water supply line 6, the IPA supply line 8 and the processing unit 16, and performs ozone water or ozone water and IPA as a liquid treatment (step S116), and proceeds to the process of step S108.

In addition, in the processing of steps S115 and S116, even if the ratio of ozone water is set to 100%, the formula can be set in advance, and the ratio of ozone water and IPA itself can be set in the formula in advance.

FIG. 10 is a flowchart showing the procedure of ozone water generation processing performed by the substrate processing system 1 according to the embodiment. First, the control unit 18 controls the ozone water generating unit 5 to mix the DIW and the acid-based chemical solution to generate DIW having the administered pH (step S201).

Next, the control unit 18 controls the ozone water generating unit 5 to mix ozone gas with DIW having the given pH value (step S202). Then, the pressure of the mixed liquid of DIW and ozone gas is increased in the tank 21 (step S203). When such step S203 ends, a series of ozone water generation processing is completed.

The substrate processing method involved in the implementation mode includes a process of generating ozone water (step S101) and a process of liquid treatment (steps S107, S114, and S116). The process of producing ozone water (step S101) produces ozone water having the given ozone concentration. The liquid processing process (steps S107, S114, S116) is based on the recipe involved in the processing of the substrate (wafer W), and the processing liquid is processed with a controlled ratio of ozone water and diluted ozone water. According to this, it is possible to perform a process requiring a high removal capacity and a treatment not requiring a high removal capacity in one substrate processing system 1 while mixing.

Furthermore, in the substrate processing method related to the implementation mode, the process of generating ozone water (step S101) includes the process of mixing pure water and ozone gas (step S202), and putting the mixture of pure water and ozone gas in the tank The process of boosting the pressure in the body 21 (step S203). According to this, it is possible to efficiently generate ozone water having the given ozone concentration.

Furthermore, in the substrate processing method of the embodiment, the process of generating ozone water (step S101) includes the process of mixing pure water and acid-based chemical solution before the process of mixing pure water and ozone gas (step S202) (Step S201). In this way, the pH value of DIW, which is the raw material of ozone water, can be lowered.

Furthermore, in the substrate processing method according to the embodiment, the process of liquid processing (step S116) is performed to simultaneously discharge the processing liquid and IPA to the substrate (wafer W). Accordingly, the wafer W can be processed by the ozone water containing OH radicals, which has a higher processing capacity than the ozone water monomer.

In the above, although the embodiment of the present disclosure has been described, the present disclosure is not limited to the above-mentioned embodiment, and various changes can be made as long as it does not deviate from the scope of the spirit. For example, in the above-mentioned embodiment, even if the ozone water supply line 6 is provided with a degassing mechanism. Accordingly, it is possible to prevent the ozone gas from leaking to the outside when the ozone gas is degassed from the ozone water heated by the heater 54.

Furthermore, in the above-mentioned embodiment, an example of adjusting the pH value of such DIW is shown for supplying an acid-based chemical solution to DIW used as a raw material for ozone water, but it is not necessary to adjust the DIW used as a raw material for ozone water. pH value.

It should be considered that the implementation type disclosed this time is illustrative and not restrictive in any respect. In fact, the above-mentioned implementation types can be presented in various types. Furthermore, the above-mentioned embodiments may be omitted, replaced, and changed in various forms without departing from the scope of the patent application and the spirit thereof.

W: Wafer (an example of substrate) 1: Substrate processing system (an example of substrate processing equipment) 6: Ozone water supply pipeline 7: Diluent supply line 7e: heater 8: IPA supply pipeline 9: Circulation pipeline 16: Processing unit (an example of substrate processing section) 18: Control Department 21: tank 22: Pure water supply pipeline 23: Ozone gas supply pipeline 27: Acid-based chemical liquid supply pipeline 51: Back pressure valve 54: heater 55: Concentration meter 91a: Nozzle (an example of ozone water discharge nozzle) 91aa: spit out 91b: Nozzle (an example of IPA discharge nozzle) 91ba: spit out

[Fig. 1] is a schematic diagram showing a schematic configuration of a substrate processing system related to an implementation type. [Fig. 2] is a schematic diagram showing the piping structure of the substrate processing system related to the implementation type. [Fig. 3] is a schematic diagram showing a configuration example of a substrate processing unit according to an embodiment. Fig. 4 is a schematic cross-sectional view showing a configuration example of a liquid supply unit according to an embodiment. Fig. 5 is a schematic cross-sectional view showing another example of the structure of the liquid supply unit according to the embodiment. Fig. 6 is a schematic diagram showing the piping configuration of the substrate processing system according to Modification 1 of the implementation type. Fig. 7 is a schematic diagram showing the piping structure of the substrate processing system according to the modification 2 of the implementation mode. Fig. 8 is a schematic diagram showing the piping configuration of a substrate processing system according to a modified example 3 of the embodiment. [FIG. 9] is a flowchart showing the sequence of substrate processing performed by the substrate processing system according to the implementation type. [Fig. 10] is a flowchart showing the procedure of ozone water generation processing performed by the substrate processing system according to the implementation type.

1: Substrate processing system (an example of substrate processing equipment)

5: Ozone water generation department

6: Ozone water supply pipeline

6a: Parallel pipeline

6b: branch pipeline

7: Diluent supply line

7a: DIW supply source

7b: Valve body

7c: Back pressure valve

7d: Flow meter

7e: heater

8: IPA supply pipeline

8a: IPA supply source

8b: Valve body

8c: Back pressure valve

8d: Flow meter

16: Processing unit (an example of substrate processing section)

21: tank

22: Pure water supply pipeline

22a: DIW supply source

22b: Valve body

22c: Back pressure valve

22d: Flow meter

23: Ozone gas supply pipeline

24: The first pipeline

25: tank

26: Second pipeline

27: Acid-based chemical liquid supply pipeline

27a: Acid-based chemical liquid supply source

27b: Valve body

27c: Back pressure valve

27d: Flow meter

28: Confluence Department

29: filter

30: Concentration meter

31: Valve body

32: Ozone gas generation department

33: filter

34: Valve body

35: check valve

36: Oxygen supply line

36a: Oxygen supply source

36b: Back pressure valve

36c: valve body

37: Mixing Department

38: Pump

41: Ozone recovery pipeline

42: Back pressure valve

43: Gas-liquid separation trap

44: Valve body

45: Ozone recovery pipeline

46: Ozone gas removal department

47: check valve

48: valve body

51: Back pressure valve

52: filter

53: Flowmeter

54: heater

55: Concentration meter

56: Valve body

57: Remove unit

61: Back pressure valve

62: Flowmeter

63: Confluence Department

64: Confluence Department

65: discharge line

66: Back pressure valve

DR: Emissions Department

EXH: Exhaust

Claims (14)

A substrate processing device, including: Ozone water generating part, which generates ozone water with the given ozone concentration; Substrate processing section, which processes substrates; An ozone water supply line, which is provided between the ozone water generating section and the substrate processing section, and supplies the ozone water to the substrate processing section; A diluent supply line, which is connected to the ozone water supply line, and supplies the diluent to the ozone water supply line; A control unit that controls the ozone water generating unit, the substrate processing unit, the ozone water supply line, and the diluent supply line, The control unit controls the supply amount of the ozone water and the diluent to the substrate processing unit in accordance with the recipe involved in the processing of the substrate. Such as the substrate processing apparatus of claim 1, wherein The above-mentioned ozone water generating unit has: Tank A pure water supply line, which is connected to the tank body, and supplies pure water to the tank body; and An ozone gas supply line, which is connected to the above-mentioned pure water supply line, and supplies ozone gas to the above-mentioned pure water supply line, The control unit mixes pure water and ozone gas in the pure water supply line, and at the same time boosts the pressure of the mixture of pure water and ozone gas in the tank to generate the ozone water. Such as the substrate processing apparatus of claim 2, wherein In the above-mentioned pure water supply line, an acid-based chemical solution is supplied via an acid-based chemical solution supply line. Such as the substrate processing apparatus of claim 3, wherein The ozone water supply pipeline has a concentration meter for measuring the ozone concentration of the ozone water, The control unit adjusts the flow rate of the acid-based chemical solution supplied to the pure water supply line based on the ozone concentration of the ozone water measured by the concentration meter. Such as the substrate processing apparatus of any one of claims 2 to 4, wherein The ozone water supply pipeline has a concentration meter for measuring the ozone concentration of the ozone water, The control unit adjusts at least one of the flow rate and the concentration of the ozone gas supplied to the pure water supply line based on the ozone concentration of the ozone water measured by the concentration meter. Such as the substrate processing apparatus of any one of claims 1 to 4, wherein The above-mentioned substrate processing unit has: An ozone water discharge nozzle, which is connected to the ozone water supply line, and discharges the ozone water or the mixture of the ozone water and the diluent to the substrate; and The IPA discharge nozzle discharges IPA (isopropyl alcohol) to the above-mentioned substrate. Such as the substrate processing apparatus of claim 6, wherein The IPA discharge nozzle is a long nozzle formed by arranging a plurality of discharge ports in the radial direction of the substrate. Such as the substrate processing apparatus of any one of claims 1 to 4, wherein The diluent supply line has a heater for heating the diluent, The control unit controls the heater in accordance with the recipe involved in the processing of the substrate, and adjusts the temperature of the mixed liquid of the ozone water and the diluent. Such as the substrate processing apparatus of any one of claims 1 to 4, wherein It further includes a circulation line for returning the ozone water that is not used in the substrate processing unit to the ozone water generating unit. Such as the substrate processing apparatus of any one of claims 1 to 4, wherein The above-mentioned ozone water supply line has a back pressure valve. A substrate processing method, including: Projects to generate ozone water with the given ozone concentration; and According to the recipe involved in the substrate processing, the liquid treatment process is performed with the treatment liquid whose ratio of the above-mentioned ozone water and the diluent which dilutes the above-mentioned ozone water is controlled. Such as the substrate processing method of claim 11, wherein The process of generating the above-mentioned ozone water includes a process of mixing pure water and ozone gas, and a process of boosting the pressure of the mixture of pure water and ozone gas in the tank. Such as the substrate processing method of claim 12, wherein The process of generating the above-mentioned ozone water includes a process of mixing pure water and an acid-based chemical solution before the process of mixing the above-mentioned pure water and ozone gas. Such as the substrate processing method of any one of claims 11 to 13, wherein The above-mentioned engineering department for liquid treatment The processing liquid and IPA (isopropyl alcohol) are simultaneously discharged to the substrate.

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