TWI791037B - Liquid treatment device and liquid treatment method - Google Patents

Abstract

[Problem] It is possible to suppress the contamination of the treatment liquid in the circulation line after the circulation of the treatment liquid is started. [Solution] The liquid treatment device of the embodiment includes a storage tank, a circulation line, a pump, a filter, a back pressure valve, and a control unit. The storage tank stores the treatment liquid. The circulation pipeline returns the treatment liquid sent from the storage tank to the storage tank. The pump forms the circulation flow of the treatment liquid in the circulation line. The filter is installed on the downstream side of the pump in the circulation line. The back pressure valve is installed on the downstream side of the filter in the circulation line. The control part controls the pump and the back pressure valve. Moreover, the control unit increases the discharge pressure of the pump to a predetermined first pressure when the circulation of the treatment liquid in the circulation line is started, and increases the discharge pressure of the pump to a pressure higher than the first pressure after a predetermined time elapses. The second pressure method of pressure controls the discharge pressure of the pump.

Description

Liquid treatment device and liquid treatment method

The disclosed embodiments relate to a liquid processing device and a liquid processing method.

Conventionally, a liquid processing apparatus is known in which a processing liquid for a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) is circulated in a circulation line, and the liquid is processed through a branch line branched from the circulation line. The processing liquid is supplied to the processing part. A filter for removing foreign matter from the treatment liquid is installed in the circulation line of this liquid treatment device (see Patent Document 1). [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-220318

[Problems to be Solved by the Invention]

However, in the conventional circulation line, after the circulation of the treatment liquid is started, the discharge pressure of the pump causes foreign matter to pass through the filter, which may cause the treatment liquid in the circulation line to be contaminated.

One aspect of the embodiment is carried out in view of the above, and aims to provide a liquid treatment device and a liquid treatment method capable of suppressing contamination of the treatment liquid in the circulation line after the circulation of the treatment liquid is started. [Means to solve the problem]

A liquid processing device according to an aspect of the embodiment includes a storage tank, a circulation line, a pump, a filter, a back pressure valve, and a control unit. The aforementioned storage tank stores the treatment liquid. The aforementioned circulation pipeline returns the treatment liquid transported from the aforementioned storage tank to the aforementioned storage tank. The aforementioned pump forms the circulation flow of the aforementioned treatment liquid in the aforementioned circulation line. The filter is installed on the downstream side of the pump in the circulation line. The back pressure valve is installed on the downstream side of the filter in the circulation line. The control unit controls the pump and the back pressure valve. In addition, the control unit is configured to increase the discharge pressure of the pump to a predetermined first pressure when the circulation of the treatment liquid in the circulation line is started, and to increase the discharge pressure of the pump after a predetermined time elapses. The discharge pressure of the aforementioned pump is controlled by increasing to the second pressure higher than the aforementioned first pressure. [Effect of Invention]

According to one aspect of the embodiment, it is possible to suppress contamination of the treatment liquid in the circulation line after the circulation of the treatment liquid is started.

Hereinafter, embodiments of the liquid processing device and liquid processing method disclosed in this application will be described in detail with reference to the attached drawings. In addition, this invention is not limited to the embodiment shown below.

＜Overview of Substrate Processing System＞ First, referring to FIG. 1, a schematic configuration of a substrate processing system 1 according to the embodiment will be described.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment. In the following, in order to clarify the positional relationship, the mutually orthogonal X-axis, Y-axis and Z-axis are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

As shown in FIG. 1 , a substrate processing system 1 includes a loading/unloading station 2 and a processing station 3 . The loading and unloading station 2 and the processing station 3 are arranged adjacent to each other.

The loading/unloading station 2 is provided with a carrier placement unit 11 and a transport unit 12 . A plurality of carriers C are placed on the carrier mounting portion 11, and the plurality of carriers C accommodate a plurality of substrates in a horizontal state, which are semiconductor wafers W (hereinafter referred to as wafers W) in the embodiment.

The transfer unit 12 is provided adjacent to the carrier placement unit 11 , and includes a substrate transfer device 13 and a delivery unit 14 inside. The substrate transfer device 13 is provided with a wafer holding mechanism for holding the wafer W. As shown in FIG. In addition, the substrate transfer device 13 is capable of moving horizontally and vertically and rotating about the vertical axis, and transfers the wafer W between the carrier C and the receiver 14 using a wafer holding mechanism.

The processing station 3 is provided adjacent to the transfer unit 12 . The processing station 3 is equipped with a transfer unit 15 and a plurality of processing units 16 . A plurality of processing units 16 are arranged side by side on both sides of the conveyance unit 15 .

The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. As shown in FIG. In addition, the substrate transfer device 17 is capable of moving horizontally and vertically and rotating about the vertical axis, and transfers the wafer W between the receiver 14 and the processing unit 16 using a wafer holding mechanism.

The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

In addition, the substrate processing system 1 includes a control device 4 . The control device 4 is, for example, a computer, and includes a control unit 18 and a memory unit 19 . The memory unit 19 stores programs for controlling various processes executed in the substrate processing system 1 . The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the memory unit 19 .

In addition, the program is recorded on a computer-readable storage medium, and may be installed in the memory unit 19 of the control device 4 from the storage medium. Examples of memory media that can be read by a computer include hard disks (HD), floppy disks (FD), optical disks (CD), magneto-optical disks (MO), and memory cards.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier loading unit 11, and places the taken out wafer W on the carrier C. Placed in the receiving and receiving department 14. The wafer W placed on the receiving unit 14 is taken out from the receiving unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .

The wafer W carried into the processing unit 16 is processed by the processing unit 16 , and then is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the receiver 14 . Furthermore, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13 .

＜Summary of Processing Unit＞ Next, referring to FIG. 2 , an overview of the processing unit 16 will be described. FIG. 2 is a schematic diagram showing the configuration of the processing unit 16 .

As shown in FIG. 2 , the processing unit 16 includes a chamber 20 , a substrate holding mechanism 30 , a processing fluid supply unit 40 , and a recovery cup 50 .

The chamber 20 accommodates the substrate holding mechanism 30 , the processing fluid supply part 40 and the recovery cup 50 . On the top of the chamber 20, an FFU (Fan Filter Unit) 21 is arranged. The FFU 21 forms a downflow in the chamber 20 .

The substrate holding mechanism 30 includes a holding portion 31 , a pillar portion 32 , and a driving portion 33 . The holding unit 31 holds the wafer W horizontally. The pillar portion 32 is a member extending in the vertical direction, rotatably supports the base end portion by the driving portion 33 , and supports the holding portion 31 horizontally at the front end portion. The driving part 33 rotates the pillar part 32 around the vertical axis. This substrate holding mechanism 30 rotates the holding part 31 supported by the supporting part 32 by using the driving part 33 to rotate the supporting part 32, thereby rotating the wafer W held in the holding part 31. .

The processing fluid supply unit 40 supplies the processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70 . The configuration of the processing fluid supply source 70 will be described later.

The recovery cup 50 is disposed so as to surround the holding unit 31 and captures the processing liquid scattered from the wafer W by the rotation of the holding unit 31 . A liquid discharge port 51 is formed at the bottom of the recovery cup 50 , and the treatment liquid captured by the recovery cup 50 is discharged to the outside of the processing unit 16 through the liquid discharge port 51 . Also, at the bottom of the recovery cup 50, an exhaust port 52 for exhausting the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed.

Next, referring to FIG. 3, a specific configuration example of the processing unit 16 will be described. FIG. 3 is a schematic diagram showing a specific configuration example of the processing unit 16 .

As shown in FIG. 3 , on the upper surface of the holding portion 31 included in the substrate holding mechanism 30 , a holding member 311 for holding the wafer W from the side is provided. The wafer W is held horizontally by the holding member 311 in a state slightly separated from the upper surface of the holding portion 31 . In addition, the wafer W is held by the holding unit 31 with the surface on which the substrate processing is performed facing upward.

The processing fluid supply part 40 is provided with: a plurality of (here, four) nozzles 41a~41d; an arm 42 supporting the nozzles 41a~41d horizontally; and a rotary lifting mechanism 43 for rotating the arm 42 and lift.

The nozzle 41a is connected to an HFC supply source 46c via a valve 44a and a flow regulator 45a. In the HFC supply source 46a, for example, a CF-based cleaning solution for processing wafers W such as HFC (Hydro Fluoro Carbon) is stored. In addition, the CF-based cleaning solution is not limited to HFC, and PFC (Per Fluoro Carbon) or HFO (Hydro Fluoro Olefins) can also be used.

The nozzle 41b is connected to a DHF supply source 46b via a valve 44b and a flow regulator 45b. In the DHF supply source 46b, for example, a cleaning solution for cleaning residues of the wafer W such as DHF (Diluted HydroFluoric acid: dilute hydrofluoric acid) is stored. In addition, the cleaning solution for cleaning the residue on the wafer W is not limited to DHF, and an organic stripping solution or the like may be used.

The nozzle 41c is connected to a DIW supply source 46c via a valve 44c and a flow regulator 45c. DIW (DeIonized Water: deionized water) is used, for example, for flushing. In addition, the processing liquid used in the rinsing process is not limited to DIW, and other types of processing liquids may be used as long as DHF can be removed from the wafer W.

The nozzle 41d is connected to an IPA supply source 46d via a valve 44d and a flow regulator 45d. IPA (IsoPropyl Alcohol) is used for replacement treatment, for example. In addition, the treatment liquid used in the replacement treatment is not limited to IPA, and other types of solvents may be used as long as the surface tension is lower than that of DIW.

The HFC supplied from the HFC supply source 46a is discharged from the nozzle 41a. DHF supplied from the DHF supply source 46b is discharged from the nozzle 41b. The DIW supplied from the DIW supply source 46c is discharged from the nozzle 41c. The IPA supplied from the IPA supply source 46d is discharged from the nozzle 41d.

＜Details of cleaning treatment＞ Next, referring to FIG. 4 , details of the cleaning process of the wafer W in the processing unit 16 will be described. Fig. 4 is a diagram showing the outline of substrate cleaning treatment in the embodiment. In addition, it is assumed that a dry etching process is performed on the wafer W as a process before performing the substrate cleaning process.

First, the wafer W is carried into the chamber 20 of the processing unit 16 by the substrate transfer device 17 . Further, the wafer W is held by the holding member 311 with the surface on which the substrate processing is performed facing upward. Thereafter, the substrate holding mechanism 30 is rotated together with the wafer W at a predetermined number of rotations by the driving unit 33 .

Next, in the treatment unit 16, as shown in FIG. 4(a), the first cleaning treatment by HFC is performed. In this first cleaning process, the nozzle 41 a of the process fluid supply unit 40 moves above the center of the wafer W. As shown in FIG. Thereafter, HFC, which is a CF-based cleaning solution, is supplied to the surface of the wafer W by opening the valve 44a for a predetermined time. By this first cleaning process, the fluorine-based polymer adhering to the wafer W can be removed when the wafer W is dry-etched.

Next, in the treatment unit 16, as shown in FIG. 4(b), the second cleaning treatment by DHF is performed. In this second cleaning process, the nozzle 41 b of the process fluid supply unit 40 moves above the center of the wafer W. As shown in FIG. Thereafter, DHF, which is a cleaning solution, is supplied to the surface of the wafer W by opening the valve 44b for a predetermined time.

By this second cleaning process, when wafer W is dry-etched, residues other than the fluorine-based polymer that adhere to wafer W and are difficult to remove in the first cleaning process can be removed.

Next, in the processing unit 16, rinse processing by DIW is performed. In this rinsing process, the nozzle 41c of the process fluid supply unit 40 is moved above the center of the wafer W, and the rinsing liquid, DIW, is supplied to the surface of the wafer W by opening the valve 44c for a predetermined time. DHF remaining on the wafer W is removed by this rinsing process.

Next, in the processing unit 16, replacement processing by IPA is performed. In this replacement process, the nozzle 41d of the process fluid supply unit 40 moves above the center of the wafer W, and supplies IPA to the surface of the wafer W by opening the valve 44d for a predetermined time. Thereby, the DIW remaining on the surface of the wafer W is replaced with IPA.

Next, in the processing unit 16, a drying process for drying the wafer W is performed. In the drying process, for example, the substrate holding mechanism 30 is rotated at a high speed by the driving unit 33 to shake off the IPA on the wafer W held by the holding member 311 .

Thereafter, in the processing unit 16, a carry-out process is performed. In the unloading process, after the rotation of the wafer W is stopped, the wafer W is unloaded from the processing unit 16 by the substrate transfer device 17 . When this unloading process is completed, a series of substrate processes for one wafer W is completed.

As described so far, in the embodiment, the first cleaning treatment by a CF-based cleaning solution (for example, HFC) and the second cleaning treatment by a cleaning solution for residue removal (for example, DHF) are performed continuously. 2 wash treatment. Thereby, according to the embodiment, the fluorine-based polymer and residues other than the fluorine-based polymer adhering at the time of the dry etching process can be favorably removed from the wafer W.

In addition, in the embodiment, although the case where the first cleaning treatment for removing the fluorine-based polymer is performed with a CF-based cleaning solution is shown, the first cleaning treatment is not limited to the use of the cleaning solution. situation. For example, the first cleaning treatment may be performed by steam cleaning using a CF-based solvent, high-temperature high-pressure cleaning, supercritical cleaning, or the like.

Also, in the embodiment, although the case where the second cleaning treatment for removing the residue is performed after the first cleaning treatment is shown, if the residue can also be removed by the first cleaning treatment, it is It is not necessarily necessary to perform the second cleaning treatment.

<Summary of Process Fluid Supply Source> Next, referring to FIG. 5 , a schematic configuration of the processing fluid supply source 70 included in the substrate processing system 1 will be described. FIG. 5 is a diagram showing a schematic configuration of a processing fluid supply source 70 according to the embodiment.

As shown in FIG. 5 , the processing fluid supply source 70 included in the substrate processing system 1 supplies processing liquid to a plurality of processing units 16 . In addition, in the embodiment, the HFC supply source 46a, the DHF supply source 46b, the DIW supply source 46c, and the IPA supply source 46d shown in FIG. 3 are separately constituted by the processing fluid supply source 70 shown in FIG.

The processing fluid supply source 70 has: a storage tank 102 storing the processing liquid; and a circulation line 104 flowing out from the storage tank 102 and returning to the storage tank 102 . In this circulation line 104 , a pump 106 , a filter 108 , a connecting portion 110 , and a back pressure valve 114 are provided in this order from the upstream side with respect to the storage tank 102 .

The pump 106 forms a circulation flow of the treatment liquid flowing out from the storage tank 102 through the circulation line 104 and then returning to the storage tank 102 . In addition, in the embodiment, the discharge pressure of the pump 106 can be controlled by the control unit 18 .

The filter 108 removes pollutants such as particles contained in the treatment liquid circulating in the circulation line 104 .

One or a plurality of branch lines 112 are connected to the connection part 110 . Each branch line 112 supplies the processing liquid flowing in the circulation line 104 to each corresponding processing unit 16 . In addition, in each branch line 112, a flow rate adjustment mechanism such as a flow control valve, a filter, etc. may be provided as necessary.

The back pressure valve 114 is to increase the opening and closing degree of the valve when the pressure of the processing liquid in the upstream side of the back pressure valve 114 is higher than the desired pressure, and the pressure of the processing liquid in the upstream side is lower than the desired pressure. In the case of pressure, the opening and closing degree of the valve is reduced, thereby maintaining the pressure of the treatment liquid in the upstream side at a desired pressure. In addition, in the embodiment, the valve opening and closing degree of the back pressure valve 114 can be controlled by the control unit 18 .

In addition, in the circulation line 104, in addition to the components described so far, auxiliary equipment (for example, a heater, a flow meter, etc.) may be further provided as needed.

Moreover, the storage tank 102 has a storage tank liquid replenishment part 116 and a liquid discharge part 118 . The storage tank liquid replenishment unit 116 replenishes the processing liquid or components of the processing liquid to the storage tank 102 . The liquid discharge unit 118 discharges the treatment liquid in the storage tank 102 when exchanging the treatment liquid in the storage tank 102 or the like.

In the processing fluid supply source 70 described so far, the back pressure valve 114 is used to maintain the pressure of the connection part 110 connected to the branch line 112 at a desired pressure, thereby enabling smooth supply of the processing fluid. The source 70 supplies the treatment liquid to each treatment unit 16 .

On the other hand, in the circulation line 104, foreign matter passes through the filter 108 due to the discharge pressure of the pump 106 after the exchange operation of the treatment liquid or the recovery operation from a failure, etc., and after the circulation of the treatment liquid is started. As a result, the treatment liquid in the circulation line 104 may become contaminated. When the processing liquid is contaminated in the circulation line 104, it is necessary to remove the foreign matter in the processing liquid with the filter 108 by recirculating for a long period of time. Therefore, the recovery of the substrate processing system 1 is as follows: time consuming situation.

Therefore, in the embodiment, by appropriately controlling the discharge pressure of the pump 106 and the valve opening and closing degree of the back pressure valve 114, foreign matter is suppressed from passing through the filter 108 after the circulation of the treatment liquid is started. Next, details of this control will be described with reference to FIGS. 6 and 7 .

FIG. 6 is a graph showing changes in the discharge pressure of the pump 106 and the valve opening and closing degree of the back pressure valve 114 in the embodiment. As shown in FIG. 6 , in the treatment fluid supply source 70 , before the time T1 when the pump 106 is raised, the valve opening and closing degree maintenance process is performed (step S1 ).

In the process of maintaining the valve opening and closing degree, the valve opening and closing degree of the back pressure valve 114 is kept constant at the predetermined valve opening and closing degree V1 by controlling the back pressure valve 114 . In other words, in the process of maintaining the valve opening and closing degree, the back pressure valve 114 does not perform general valve opening and closing degree control regardless of the pressure value of the treatment liquid upstream of the back pressure valve 114 .

In the valve opening degree maintaining process, for example, the back pressure valve 114 is constantly kept fully open. Furthermore, when the pump 106 is activated, the valve opening and closing degree is maintained.

Following the valve opening and closing degree maintenance process, a cycle start process is performed in the process fluid supply source 70 (step S2). In this cycle start process, the pump 106 is started at time T1 by controlling the pump 106 .

Here, when the cycle start process is performed, the discharge pressure of the pump 106 is controlled so that it becomes the predetermined first pressure P1, and the pump 106 is started. In addition, the first pressure P1 is lower than the second pressure P2 which is the maximum discharge pressure of the pump 106 . In addition, as means for operating the pump 106 at the first pressure P1 lower than the maximum discharge pressure (second pressure P2), for example, a regulator may be added to the pump 106, and the regulator may adjust the pressure between the low pressure (first pressure P1) and The high pressure (second pressure P2) may be used to switch the discharge pressure.

FIG. 7 is a graph showing transitions in differential pressure between the upstream side and the downstream side of the filter 108 in the embodiment and the reference example. In addition, in the reference example shown in FIG. 7, unlike the embodiment, the pump 106 is activated at the second pressure P2 which is the maximum discharge pressure at time T1. Also, before the pump 106 is started, the discharge pressure of the pump 106 is not applied to the upstream side of the back pressure valve 114, so the control of the back pressure valve 114 is in a state of being inactive.

Therefore, in the reference example, the control of the back pressure valve 114 is started after the pump 106 rises to the second pressure P2 and applies the discharge pressure to the upstream side of the back pressure valve 114 . However, since there is a predetermined time delay until the control is stabilized, the back pressure valve 114 is not controlled until the time Ta when the control is stabilized.

That is, on the upstream side of the filter 108, the treatment liquid is discharged from the pump 106 at the maximum discharge pressure, and on the downstream side of the filter 108, the back pressure valve 114 is not controlled. Thereby, as shown in FIG. 7 , from the time T1 when the pump 106 rises to the time Ta when the control of the back pressure valve 114 takes effect, between the upstream side and the downstream side of the filter 108, a pressure exceeding the filter 108 is imposed. The differential pressure resistance is as large as the differential pressure Dc. Therefore, in the reference example, foreign matter may pass through the filter 108 due to the large differential pressure Dc.

On the other hand, in the embodiment, the circulation of the treatment liquid in the circulation line 104 is started while controlling the discharge pressure of the pump 106 to the first pressure P1 which is lower than the maximum discharge pressure (second pressure P2). Accordingly, when the pump 106 is activated, the pressure applied to the upstream side of the filter 108 can be reduced.

That is, by controlling the discharge pressure of the pump 106 to the first pressure P1 and starting the circulation of the treatment liquid, the differential pressure applied between the upstream side and the downstream side of the filter 108 can be suppressed to be smaller than that in the reference example The differential pressure Da of the differential pressure Dc. Therefore, according to the embodiment, it is possible to suppress foreign substances from passing through the filter 108 due to the discharge pressure of the pump 106 after the circulation of the treatment liquid is started.

Furthermore, in the embodiment, the back pressure valve 114 is controlled so that it is constantly fully opened when the pump 106 is activated by the valve opening and closing degree maintenance process. Thereby, even when the processing liquid discharged from the pump 106 is discharged at the first pressure P1 lower than the maximum discharge pressure, the flow rate of the processing liquid in the circulation line 104 can be sufficiently ensured. Thereby, even if the air is mixed into the pump 106, it is possible to prevent the air from staying in the pump 106, and it is possible to prevent a bad situation caused by the air mixed into the pump 106.

In addition, in the valve opening degree maintenance process, the back pressure valve 114 may not be fully opened, as long as the valve opening degree V1 can ensure the flow rate of the treatment liquid in the circulation line 104 at a constant value. Thereby, even in the case of discharging at the first pressure P1, the flow rate of the processing liquid in the circulation line 104 can be sufficiently ensured.

Return to the description of FIG. 6 . Following the cycle start process, the valve opening and closing degree control process is performed in the process fluid supply source 70 (step S3). In this valve opening and closing degree control process, the control of the valve opening and closing degree of the back pressure valve 114 is started at time T2.

In addition, the "control of valve opening and closing degree" refers to increasing the valve opening and closing degree when the pressure of the processing liquid in the upstream side of the back pressure valve 114 is greater than the expected pressure, and the processing liquid in the upstream side When the pressure is lower than the desired pressure, the opening and closing degree of the valve is reduced so that the pressure in the upstream side of the back pressure valve 114 becomes constant to the desired pressure.

Also, after this valve opening degree control process (that is, later than time T2 ), as shown in FIG. 6 , the valve opening degree of the back pressure valve 114 is controlled so that the valve opening degree becomes smaller. The reason for this is that since the discharge pressure of the pump 106 is lower than the first pressure P1 of the maximum discharge pressure, in order to increase the pressure on the upstream side of the back pressure valve 114 to a desired pressure, it is necessary to wring the pump through the back pressure valve. 114 of the treatment solution.

Continuing to the valve opening and closing degree control process, in the process fluid supply source 70, a pressure increase process is performed (step S4). In this boosting process, the discharge pressure of the pump 106 is raised from the first pressure P1 to the second pressure P2 which is the maximum discharge pressure, after a predetermined time elapses from the time T1 to the time T3 when the differential pressure stabilizes. In addition, as shown in FIG. 6 , at time T3, the valve opening degree of the back pressure valve 114 is reduced to the valve opening degree V2 which is smaller than the valve opening degree V1 in the valve opening degree maintaining process.

By this pressure boosting process, the pressure in the upstream side of the filter 108 increases. However, in the embodiment, since the valve opening degree of the back pressure valve 114 is reduced to the valve opening degree V2 by the valve opening degree control process, the upstream side of the back pressure valve 114 (that is, the side of the filter 108 The pressure in the downstream side) also increases.

Thereby, as shown in FIG. 7 , it is possible to suppress a large increase in the differential pressure Db applied between the upstream side and the downstream side of the filter 108 after the discharge is started at the maximum discharge pressure (that is, after the time T3). situation. Therefore, according to the embodiment, it is possible to suppress foreign substances from passing through the filter 108 after the boosting process.

＜Procedure of handling＞ Next, referring to Fig. 8 and Fig. 9, the procedure of various processes related to the embodiment will be described. FIG. 8 is a flowchart showing a substrate processing procedure executed by the substrate processing system 1 .

As shown in FIG. 8, in the processing unit 16, first, carry-in processing is performed (step S101). In the loading process, the control unit 18 controls the substrate transfer device 17 to load the wafer W into the chamber 20 of the processing unit 16 . The wafer W is held by the holding member 311 with the surface to be processed facing upward. Thereafter, the control unit 18 controls the drive unit 33 to rotate the substrate holding mechanism 30 at a predetermined number of rotations.

Next, in the processing unit 16, the first cleaning process is performed (step S102). In the first cleaning process, the control unit 18 moves the nozzle 41 a of the process fluid supply unit 40 above the center of the wafer W. As shown in FIG. Thereafter, the control unit 18 opens the valve 44a for a predetermined time, thereby supplying HFC, which is a CF-based cleaning solution, to the surface of the wafer W.

The HFC supplied to the surface of the wafer W spreads over the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the fluorine-based polymer adhering to the wafer W is removed by HFC.

Next, in the processing unit 16, the second cleaning process is performed (step S103). In the second cleaning process, the control unit 18 moves the nozzle 41 b of the process fluid supply unit 40 above the center of the wafer W. Thereafter, the control unit 18 opens the valve 44b for a predetermined time, thereby supplying DHF, which is a cleaning liquid for residue, to the surface of the wafer W.

The DHF supplied to the surface of the wafer W is spread over the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the residue adhering to the wafer W is removed by DHF.

Next, in the processing unit 16, a flushing process is performed (step S104). In the rinsing process, the control unit 18 moves the nozzle 41c of the processing fluid supply unit 40 above the center of the wafer W, and opens the valve 44c for a predetermined time, thereby supplying DIW, which is a rinsing liquid, to the wafer W. surface.

The DIW supplied to the surface of the wafer W spreads over the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the DHF remaining on the surface of the wafer W is removed by the DIW.

Next, in the processing unit 16, replacement processing is performed (step S105). In the replacement process, the control unit 18 moves the nozzle 41d of the process fluid supply unit 40 above the center of the wafer W, and opens the valve 44d for a predetermined time, thereby supplying IPA, which is a solvent, to the surface of the wafer W. .

The IPA supplied to the surface of the wafer W is spread over the entire surface of the wafer W by the centrifugal force accompanying the rotation of the wafer W. Thereby, the DIW remaining on the surface of the wafer W is replaced with IPA.

Next, in the processing unit 16, a drying process for drying the wafer W is performed (step S106). In the drying process, for example, the control unit 18 controls the driving unit 33 to rotate the substrate holding mechanism 30 at a high speed, thereby shaking off the IPA on the wafer W held by the holding member 311 .

Thereafter, in the processing unit 16, an unloading process is performed (step S107). In the unloading process, the control unit 18 controls the drive unit 33 to stop the rotation of the wafer W, and then controls the substrate transfer device 17 to unload the wafer W from the processing unit 16 . When this unloading process is completed, a series of substrate processes for one wafer W is completed.

FIG. 9 is a flow chart showing a procedure of liquid treatment executed by the treatment fluid supply source 70 . This treatment is carried out after the exchange of the treatment liquid or the restoration work due to failure. As shown in FIG. 9 , in the treatment fluid supply source 70 , first, the valve opening and closing degree maintenance process is performed (step S111 ). In the valve opening and closing degree maintaining process, the control unit 18 controls the back pressure valve 114, and the valve opening and closing degree of the back pressure valve 114 is kept constant at a predetermined valve opening and closing degree V1. In this valve opening degree maintaining process, for example, the back pressure valve 114 is constantly kept fully open.

Next, in the treatment fluid supply source 70, a cycle start process is performed (step S112). In the circulation start process, the controller 18 controls the pump 106 to start circulation of the treatment liquid in the circulation line 104 . In addition, in the cycle start process, the discharge pressure when the pump 106 is activated is controlled by the first pressure P1 which is lower than the maximum discharge pressure (second pressure P2).

Next, in the processing fluid supply source 70, valve opening and closing degree control processing is performed (step S113). In the valve opening degree control process, the control unit 18 controls the back pressure valve 114 so that the pressure on the upstream side of the back pressure valve 114 becomes constant at a desired pressure, and controls the valve opening degree. In addition, in the embodiment, since the discharge pressure of the pump 106 is the first pressure P1 which is lower than the maximum discharge pressure, it is controlled so that the valve opening and closing degree of the back pressure valve 114 becomes small.

Thereafter, in the treatment fluid supply source 70, a pressure increase treatment is performed (step S114). In the boosting process, the controller 18 controls the pump 106 to boost the discharge pressure of the pump 106 from the first pressure P1 to the second pressure P2 which is the maximum discharge pressure. When the pressurization treatment is completed, a series of liquid treatment by the treatment fluid supply source 70 is completed.

As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, Various changes are possible without deviating from the meaning. For example, in the embodiment, although the example of boosting the discharge pressure of the pump 106 to the second pressure P2 which is the maximum discharge pressure in the pressure boosting process is shown, the second pressure P2 may not be the pump pressure. 106 of the maximum spit pressure.

The liquid processing device of the embodiment includes a storage tank 102 , a circulation line 104 , a pump 106 , a filter 108 , a back pressure valve 114 and a control unit 18 . The storage tank 102 stores the treatment liquid. The circulation line 104 returns the treatment liquid sent from the storage tank 102 to the storage tank 102 . The pump 106 forms the circulation flow of the treatment liquid in the circulation line 104 . The filter 108 is provided on the downstream side of the pump 106 in the circulation line 104 . The back pressure valve 114 is provided on the downstream side of the filter 108 in the circulation line 104 . The control unit 18 controls the pump 106 and the back pressure valve 114 . Moreover, the control unit 18 raises the discharge pressure of the pump 106 to a predetermined first pressure P1 when the circulation of the treatment liquid in the circulation line 104 is started, and increases the discharge pressure of the pump 106 after a predetermined time elapses. The discharge pressure of the pump 106 is controlled so as to increase to the second pressure P2 which is higher than the first pressure P1. This prevents foreign substances from passing through the filter 108 due to the discharge pressure of the pump 106 after the circulation of the treatment liquid is started.

Also, in the liquid processing apparatus of the embodiment, the control unit 18 controls the back pressure so that the back pressure valve 114 becomes constant at a predetermined valve opening and closing degree V1 when the circulation of the processing liquid in the circulation line 104 is started. Valve 114. Thereby, even when the processing liquid discharged from the pump 106 is discharged at the first pressure P1 lower than the maximum discharge pressure, the flow rate of the processing liquid in the circulation line 104 can be sufficiently ensured.

In addition, in the liquid processing apparatus of the embodiment, the control unit 18 controls the back pressure valve 114 so that the back pressure valve 114 is constantly fully opened when the circulation of the processing liquid in the circulation line 104 is started. Thereby, even if the air is mixed into the pump 106, it is possible to prevent the air from staying in the pump 106, and it is possible to prevent a bad situation caused by the air mixed into the pump 106.

Also, in the liquid processing apparatus of the embodiment, the control unit 18 gradually changes the valve opening and closing degree from the predetermined valve opening and closing degree V1 before the discharge pressure of the pump 106 increases from the first pressure P1 to the second pressure P2. In a small way, the back pressure valve 114 is controlled. Thereby, it is possible to suppress excessive increase in the differential pressure applied between the upstream side and the downstream side of the filter 108 after the pressure boosting process.

Moreover, the liquid processing apparatus of the embodiment is further provided with: a connection part 110, which is arranged between the filter 108 and the back pressure valve 114 in the circulation line 104, and is connected to supply the processing liquid to the processing substrate (wafer). W) branch pipeline 112 of the processing part (processing unit 16). This enables smooth supply of the treatment liquid from the treatment fluid supply source 70 to the treatment unit 16 .

Also, the liquid processing method of the embodiment includes a cycle start process (step S112) and a boost process (step S114). The cycle start project (step S112) is to make the processing liquid transported from the storage tank 102 return to the circulation line 104 of the storage tank 102, and when the circulation of the processing liquid is started, the processing liquid in the circulation line 104 is formed. The discharge pressure of the pump 106 of the circulating flow rises to a predetermined first pressure P1. The boosting process (step S114 ) is to increase the discharge pressure of the pump 106 to the second pressure P2 which is higher than the first pressure P1 after a predetermined time elapses. This prevents foreign substances from passing through the filter 108 due to the discharge pressure of the pump 106 after the circulation of the treatment liquid is started. It is also possible to gradually increase the discharge pressure of the pump 106 when increasing to the first pressure P1, or when increasing from the first pressure P1 to the second pressure P2. Thereby, it is possible to further suppress foreign substances from passing through the filter 108 due to the discharge pressure of the pump 106 .

Further effects or modified examples can be easily derived by those who have ordinary knowledge in the technical field of the invention. Therefore, the wider aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various changes may be made without departing from the spirit or scope of all inventive concepts as defined by the appended claims and their equivalents.

W‧‧‧Wafer 1‧‧‧substrate processing system 16‧‧‧processing unit 18‧‧‧Control Department 70‧‧‧handling fluid supply source 102‧‧‧Storage tank 104‧‧‧circulation pipeline 106‧‧‧pump 108‧‧‧Filter 110‧‧‧connection part 114‧‧‧Back pressure valve

[FIG. 1] FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment. [Fig. 2] Fig. 2 is a schematic diagram showing the configuration of a processing unit. [Fig. 3] Fig. 3 is a schematic diagram showing a specific configuration example of a processing unit. [FIG. 4] FIG. 4 is a diagram showing the outline of the substrate cleaning process in the embodiment. [FIG. 5] FIG. 5 is a diagram showing a schematic configuration of a processing fluid supply source according to an embodiment. [FIG. 6] FIG. 6 is a graph showing the transition of the discharge pressure and valve opening and closing degree of the pump in the embodiment. [FIG. 7] FIG. 7 is a graph showing transition of the differential pressure between the upstream side and the downstream side of the filter in the embodiment and the reference example. [FIG. 8] FIG. 8 is a flow chart showing a substrate processing procedure executed by the substrate processing system. [ Fig. 9 ] Fig. 9 is a flow chart showing a procedure of liquid treatment performed by a treatment fluid supply source.

16‧‧‧processing unit

70‧‧‧handling fluid supply source

102‧‧‧Storage tank

104‧‧‧circulation pipeline

106‧‧‧pump

108‧‧‧Filter

110‧‧‧connection part

112‧‧‧Branch pipeline

114‧‧‧Back pressure valve

116‧‧‧Storage tank liquid replenishment part

118‧‧‧Drain

Claims (7)

A liquid treatment device, characterized by comprising: a storage tank for storing the treatment liquid; a circulation line for returning the treatment liquid transported from the storage tank to the storage tank; a pump for forming the treatment liquid in the circulation line circulating flow; a filter disposed downstream of the aforementioned pump in the aforementioned circulating line; a back pressure valve disposed downstream of the aforementioned filter in the aforementioned circulating line; and a control unit for controlling the aforementioned pump and the aforementioned back pressure valve. The pressure valve, the control unit, is used to increase the discharge pressure of the pump to a predetermined first pressure when the circulation of the treatment liquid in the circulation line is started, and to make the discharge pressure of the pump rise after a predetermined time has elapsed. The discharge pressure of the pump is controlled so that the pressure increases to a second pressure higher than the first pressure, and the control unit keeps the back pressure valve constant when the circulation of the treatment liquid in the circulation line is started. The back pressure valve can be controlled in such a way that the opening and closing degree of the flow rate of the treatment liquid in the circulation line can be ensured. A liquid treatment device is characterized in that it is provided with: a storage tank for storing treatment liquid; a circulation line for returning the treatment liquid transported from the storage tank to the storage tank; a pump for forming a circulation flow of the treatment liquid in the circulation line; a filter provided on the downstream side of the pump in the circulation line the back pressure valve is arranged on the downstream side of the aforementioned filter in the aforementioned circulation line; During the cycle, the discharge pressure of the aforementioned pump is increased to a predetermined first pressure, and after a predetermined time has elapsed, the discharge pressure of the aforementioned pump is increased to a second pressure higher than the aforementioned first pressure. The discharge pressure is controlled so that the back pressure valve becomes constant at a predetermined valve opening and closing degree when the circulation of the treatment liquid in the circulation line is started, and the discharge pressure of the pump increases from the first The back pressure valve is controlled in such a manner that the opening and closing degree of the valve is gradually reduced from a predetermined valve opening degree before the pressure increases to the second pressure. The liquid processing device according to claim 1 or 2 of the patent scope, wherein the control unit controls the back pressure valve in such a way that the back pressure valve is fully opened when the circulation of the processing liquid in the circulation line is started. Back pressure valve. The liquid processing device as claimed in item 1 of the scope of the patent application, wherein the control unit is configured to slowly increase the valve opening and closing degree from a predetermined valve opening and closing degree before the discharge pressure of the aforementioned pump increases from the first pressure to the second pressure. In a smaller way, control the aforementioned back pressure valve. Such as the liquid processing device of claim 1 of the scope of the patent application, wherein, it is further equipped with: a connecting part, which is arranged between the aforementioned filter and the aforementioned back pressure valve in the aforementioned circulation pipeline, and is connected to supply the aforementioned processing liquid to the processing The branch pipeline of the processing part of the substrate. A liquid treatment method, characterized by comprising: a cycle start process, in which the treatment liquid transported from the storage tank is returned to the circulation pipeline of the storage tank, and when the circulation of the treatment liquid is started, the aforementioned cycle is formed. The discharge pressure of the pump of the circulating flow of the treatment liquid in the pipeline is increased to a predetermined first pressure; and the boosting process is to increase the discharge pressure of the aforementioned pump to a second pressure greater than the aforementioned first pressure after a predetermined time elapses , the above-mentioned cycle start project is to make the back pressure valve on the downstream side of the filter arranged in the above-mentioned circulation line constant so as to ensure the The valve opening and closing degree of the flow rate of the aforementioned treatment liquid is used to control the aforementioned back pressure valve. A liquid treatment method, characterized by comprising: a cycle start process, in which the treatment liquid transported from the storage tank is returned to the circulation pipeline of the storage tank, and when the circulation of the treatment liquid is started, the aforementioned cycle is formed. The discharge pressure of the pump of the circulating flow of the treatment liquid in the pipeline is increased to a predetermined first pressure; and the boosting process is to increase the discharge pressure of the aforementioned pump to a second pressure greater than the aforementioned first pressure after a predetermined time elapses , the above-mentioned cycle start process is to make the back pressure valve on the downstream side of the filter arranged in the above-mentioned circulation line constant to a predetermined valve opening and closing degree when starting the circulation of the above-mentioned treatment liquid in the above-mentioned circulation line , controlling the back pressure valve so that the opening and closing degree of the valve gradually decreases from a predetermined valve opening degree before the discharge pressure of the pump increases from the first pressure to the second pressure.

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