TW201919770A - Solution processing device and solution processing method capable of suppressing contamination of processing solution in circulation pipe - Google Patents

Abstract

The subject of the present invention is to suppress the contamination of processing solution in the circulation pipe after starting of processing solution circulation. The present invention provides a solution processing device, which comprises: a storage tank, circulation pipe, a pump, a filter, a back pressure valve, and a controller. The storage tank is used for storing processing solution. The circulation pipe may return the processing solution delivered from the storage tank to the storage tank. The pump may enable the circulation flow of processing solution in the circulation pipe. The filter is disposed at the downstream in the circulation pipe. The back pressure valve is disposed at the downstream of the filter in the circulation pipe. The controller may control the pump and the back pressure valve. Furthermore, while starting the circulation of processing solution in the circulation pipe, the output pressure of the pump may be increased by the controller to the predetermined first pressure; after a predetermined time period, the output pressure of the pump may be increased by the controller to a second pressure greater than the first pressure to control the output pressure of the pump.

Description

Liquid processing device and liquid processing method

The disclosed embodiments relate to a liquid processing apparatus and a liquid processing method.

Conventionally, a liquid processing apparatus has been known that circulates a processing liquid for a substrate such as a semiconductor wafer (hereinafter, also referred to as a wafer) in a circulation line, and passes the branch line branched from the circulation line to transfer the processing liquid. The processing liquid is supplied to the processing section. The circulation line of the liquid processing apparatus is provided with a filter for removing foreign matter from the processing liquid (see Patent Document 1).

[Prior technical literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-220318

[Problems to be Solved by the Invention]

However, in the conventional circulation line, after the circulation of the treatment liquid is started, foreign matter passes through the filter due to the discharge pressure of the pump, which may cause the treatment liquid in the circulation line to be contaminated.

One aspect of the embodiment is performed in view of the foregoing, and an object thereof is to provide a liquid processing device and a liquid processing method capable of preventing the processing liquid in the circulation line from being contaminated after the circulation of the processing liquid is started.

[Means to solve the problem]

A liquid processing apparatus according to an aspect of the embodiment includes a storage tank, a circulation line, a pump, a filter, a back pressure valve, and a control unit. The storage tank stores the processing liquid. The circulation line returns the processing liquid transported from the storage tank to the storage tank. The pump is a circulating flow of the treatment liquid in the circulation line. The filter is provided on a downstream side of the pump in the circulation line. The back pressure valve is provided on the downstream side of the filter in the circulation line. The control unit controls the pump and the back pressure valve. The control unit is configured to increase the discharge pressure of the pump to a predetermined first pressure when the circulation of the treatment liquid in the circulation line is started, and to make the discharge pressure of the pump after a predetermined time has elapsed. The method of increasing the pressure to a second pressure greater than the first pressure controls the discharge pressure of the pump.

[Effect of the invention]

According to one aspect of the embodiment, after the circulation of the treatment liquid is started, the situation in which the treatment liquid in the circulation line is contaminated can be suppressed.

Hereinafter, referring to the attached drawings, the embodiments of the liquid processing apparatus and the liquid processing method disclosed in this case will be described in detail. The invention is not limited to the embodiments described below.

＜ Outline of substrate processing system ＞
First, referring to FIG. 1, a schematic configuration of a substrate processing system 1 according to the embodiment will be described.

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to the embodiment. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is set to the vertical upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged adjacent to each other.

The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C are mounted on the carrier mounting portion 11, and the plurality of carriers C house a plurality of substrates in a horizontal state. In the embodiment, they are semiconductor wafers W (hereinafter referred to as wafers W).

The transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a receiving unit 14 therein. The substrate transfer apparatus 13 includes a wafer holding mechanism that holds a wafer W. In addition, the substrate transfer device 13 is capable of moving in the horizontal and vertical directions and rotating about the vertical axis, and uses a wafer holding mechanism to transfer the wafer W between the carrier C and the receiving unit 14.

The processing station 3 is disposed adjacent to the transfer unit 12. The processing station 3 includes a transfer unit 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged on both sides of the conveyance unit 15.

The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds a wafer W. The substrate transfer device 17 is capable of moving in the horizontal and vertical directions and rotating about the vertical axis. The wafer holding mechanism is used to transfer the wafer W between the receiving unit 14 and the processing unit 16.

The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

The substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a memory unit 19. The memory unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing a program stored in the storage unit 19.

It should be noted that the program is recorded on a storage medium that can be read by a computer, and may be a storage unit 19 installed in the control device 4 from the storage medium. Examples of the storage medium that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placing section 11 and loads the taken out wafer W. Placed in the receiving department 14. The wafer W placed on the receiving and receiving unit 14 is taken out from the receiving and receiving unit 14 and transferred to the processing unit 16 by the substrate transfer device 17 of the processing station 3.

The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then is removed from the processing unit 16 by the substrate transfer device 17 and placed in the receiving unit 14. The processed wafer W placed on the receiving and receiving unit 14 is returned to the carrier C of the carrier placing unit 11 by the substrate transfer device 13.

＜ Outline of processing unit ＞
Next, an outline of the processing unit 16 will be described with reference to FIG. 2. FIG. 2 is a schematic diagram showing the configuration of the processing unit 16.

As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.

The chamber 20 contains a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50. On the top of the chamber 20, a FFU (Fan Filter Unit) 21 is provided. The FFU 21 is formed to form a downflow in the chamber 20.

The substrate holding mechanism 30 includes a holding portion 31, a support portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The pillar portion 32 is a member extending in the vertical direction. The base portion is rotatably supported by the driving portion 33, and the holding portion 31 is horizontally supported at the front end portion. The driving portion 33 rotates the support portion 32 around the vertical axis. This substrate holding mechanism 30 rotates the holding portion 31 supported by the holding portion 32 by rotating the holding portion 32 using the driving portion 33, thereby rotating the wafer W held by the holding portion 31. .

The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The processing fluid supply unit 40 is connected to a processing fluid supply source 70. The configuration of the processing fluid supply source 70 will be described later.

The collection cup 50 is arranged to surround the holding portion 31 and capture the processing liquid scattered from the wafer W due to the rotation of the holding portion 31. A liquid discharge port 51 is formed at the bottom of the recovery cup 50, and the processing liquid captured by the recovery cup 50 is discharged from the liquid discharge port 51 to the outside of the processing unit 16. An exhaust port 52 is formed at the bottom of the recovery cup 50 to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16.

Next, a specific configuration example of the processing unit 16 will be described with reference to FIG. 3. FIG. 3 is a schematic diagram showing a specific configuration example of the processing unit 16.

As shown in FIG. 3, a holding member 311 that holds the wafer W from the side is provided on the upper surface of the holding portion 31 provided in the substrate holding mechanism 30. The wafer W is held horizontally by the holding member 311 in a state where it is slightly separated from the upper surface of the holding portion 31. In addition, the wafer W is held by the holding portion 31 in a state where the surface on which the substrate is processed faces upward.

The processing fluid supply unit 40 is provided with a plurality of (here, four) nozzles 41a to 41d; a support arm 42 for horizontally supporting the nozzles 41a to 41d; and a rotation lifting mechanism 43 for rotating the support arm 42 and Lifting.

The nozzle 41a is connected to the HFC supply source 46c via a valve 44a and a flow regulator 45a. The HFC supply source 46a is, for example, a CF-based cleaning solution that stores processing wafers W such as HFC (Hydro Fluoro Carbon). The CF cleaning solution is not limited to HFC, and PFC (Per Fluoro Carbon) or HFO (Hydro Fluoro Olefins) can also be used.

The nozzle 41b is connected to a DHF supply source 46b via a valve 44b and a flow regulator 45b. The DHF supply source 46b is, for example, a cleaning solution that stores residues of the wafer W, such as DHF (Diluted HydroFluoric acid). The cleaning liquid for cleaning the residue of the wafer W is not limited to DHF, and an organic peeling liquid or the like may be used.

The nozzle 41c is connected to a DIW supply source 46c via a valve 44c and a flow regulator 45c. DIW (DeIonized Water) is used, for example, for rinsing. In addition, the processing liquid used for the rinsing process is not limited to DIW. As long as DHF can be removed from the wafer W, other types of processing liquid may be used.

The nozzle 41d is connected to the IPA supply source 46d via a valve 44d and a flow regulator 45d. IPA (IsoPropyl Alcohol) is used, for example, for replacement processing. In addition, the treatment liquid used for the replacement treatment is not limited to IPA. As long as the solvent has a surface tension lower than DIW, other types of solvents may be used.

The HFC supplied from the HFC supply source 46a is discharged from the nozzle 41a. The DHF supplied from the DHF supply source 46b is discharged from the nozzle 41b. The DIW supplied from the DIW supply source 46c is discharged from the nozzle 41c. The IPA supplied from the IPA supply source 46d is discharged from the nozzle 41d.

＜ Details of cleaning treatment ＞
Next, referring to FIG. 4, the details of the cleaning process of the wafer W in the processing unit 16 will be described. FIG. 4 is a diagram showing an outline of a substrate cleaning process in the embodiment. In addition, it is assumed that the wafer W is subjected to a dry etching process before the substrate cleaning process is performed.

First, the wafer W is transferred into the chamber 20 of the processing unit 16 by the substrate transfer device 17. The wafer W is held by the holding member 311 in a state where the surface on which the substrate is processed faces upward. Thereafter, the substrate holding mechanism 30 and the wafer W are rotated by a predetermined number of rotations by the driving unit 33.

Next, in the processing unit 16, as shown in FIG. 4 (a), the first washing process by HFC is performed. In this first cleaning process, the nozzle 41 a of the processing fluid supply unit 40 moves above the center of the wafer W. Thereafter, HFC, which is a CF-based cleaning solution, is supplied to the surface of the wafer W by opening the valve 44a for a predetermined time. With this first cleaning process, the fluorine-based polymer adhering to the wafer W can be removed when the wafer W is dry-etched.

Next, in the processing unit 16, as shown in FIG. 4 (b), a second washing process by DHF is performed. In this second cleaning process, the nozzle 41b of the processing fluid supply unit 40 moves above the center of the wafer W. Thereafter, DHF, which is a cleaning solution, is supplied to the surface of the wafer W by opening the valve 44b for a predetermined time.

With this second cleaning process, when dry etching is performed on the wafer W, it is possible to remove residues other than the fluorine-based polymer that adheres to the wafer W and is difficult to remove in the first cleaning process.

Next, the processing unit 16 performs a flushing process by DIW. In this rinsing process, the nozzle 41c of the processing fluid supply unit 40 moves above the center of the wafer W, and the DIW is supplied to the surface of the wafer W by opening the valve 44c for a predetermined time. With this rinsing process, DHF remaining on the wafer W is removed.

Next, the processing unit 16 performs a replacement process by IPA. In this replacement process, the nozzle 41d of the processing fluid supply unit 40 moves above the center of the wafer W, and the IPA is supplied to the surface of the wafer W by opening the valve 44d for a predetermined time. Thereby, the DIW remaining on the surface of the wafer W is replaced with IPA.

Next, the processing unit 16 performs a drying process for drying the wafer W. In the drying process, for example, the substrate holding mechanism 30 is rotated at a high speed by the driving unit 33, whereby the IPA held on the wafer W held by the holding member 311 is thrown away.

Thereafter, the processing unit 16 performs a carry-out process. In the unloading process, after the rotation of the wafer W is stopped, the wafer W is unloaded from the processing unit 16 by the substrate transfer device 17. When this unloading process is completed, a series of substrate processes for one wafer W is completed.

As explained so far, in the embodiment, the first cleaning treatment by a CF-based cleaning solution (for example, HFC) and the cleaning solution (for example, DHF) by a residue are continuously performed. 2 Wash treatment. Thus, according to the embodiment, residues other than the fluorine-based polymer and the fluorine-based polymer that are attached during the dry etching process can be favorably removed from the wafer W.

In addition, in the embodiment, the case where the first washing treatment for removing the fluoropolymer is performed using a CF-based washing solution is shown, but the first washing treatment is not limited to the use of a washing solution. Situation. For example, the first cleaning treatment may be performed by steam cleaning, high-temperature high-pressure cleaning, supercritical cleaning, etc. using a CF-based solvent.

In the embodiment, the second washing process to remove the residue after the first washing process is shown. However, if the residue can also be removed by the first washing process, the system is It is not necessary to perform the 2nd washing process.

＜ Summary of supply source of processing fluid ＞
Next, a schematic configuration of a processing fluid supply source 70 included in the substrate processing system 1 will be described with reference to FIG. 5. FIG. 5 is a diagram showing a schematic configuration of a processing fluid supply source 70 according to the embodiment.

As shown in FIG. 5, a processing fluid supply source 70 provided in the substrate processing system 1 supplies a processing liquid to a plurality of processing units 16. In addition, in the embodiment, the processing fluid supply source 70 shown in FIG. 5 separately constitutes the HFC supply source 46a, the DHF supply source 46b, the DIW supply source 46c, and the IPA supply source 46d shown in FIG. 3, respectively.

The processing fluid supply source 70 includes: a storage tank 102 that stores a processing liquid; and a circulation line 104 that flows out from the storage tank 102 and returns to the storage tank 102. A pump 106, a filter 108, a connection portion 110, and a back pressure valve 114 are sequentially provided in the circulation line 104 with the storage tank 102 as a reference from the upstream side.

The pump 106 forms a circulating flow of the processing liquid flowing out of the storage tank 102 and returned to the storage tank 102 through the circulation line 104. In the embodiment, the discharge pressure of the pump 106 can be controlled by the control unit 18.

The filter 108 removes pollutants such as particles contained in the processing liquid circulating in the circulation line 104.

The connection portion 110 is connected to one or a plurality of branch lines 112. Each branch line 112 supplies the processing liquid flowing through the circulation line 104 to the corresponding processing unit 16. In addition, each branch line 112 may be provided with a flow rate adjustment mechanism such as a flow rate control valve, a filter, or the like, as required.

The back pressure valve 114 is to increase the valve opening and closing degree when the pressure of the processing liquid in the upstream side of the back pressure valve 114 is larger than the desired pressure, and the pressure of the processing liquid in the upstream side is smaller than the desired In the case of pressure, the valve opening and closing degree is reduced, thereby maintaining the pressure of the processing liquid in the upstream side to a desired pressure. In addition, in the embodiment, the valve opening and closing degree of the back pressure valve 114 can be controlled by the control unit 18.

In addition, the circulation line 104 may be provided with auxiliary equipment (for example, a heater, a flow meter, etc.) in addition to the components described so far, as necessary.

The storage tank 102 includes a storage tank liquid replenishing unit 116 and a draining unit 118. The tank liquid replenishing unit 116 is configured to replenish the processing liquid or constituent components of the processing liquid to the storage tank 102. The liquid discharge part 118 discharges the processing liquid in the storage tank 102 when the processing liquid in the storage tank 102 is exchanged.

In the processing fluid supply source 70 described so far, the back pressure valve 114 is used to maintain the pressure of the connection portion 110 to which the branch line 112 is connected to a desired pressure, whereby the processing fluid supply can be smoothly performed. The source 70 supplies the processing liquid to each processing unit 16.

On the other hand, the circulation line 104 is caused by foreign matter passing through the filter 108 due to the discharge pressure of the pump 106 after the exchange of the treatment liquid or the restoration operation from the failure, etc., and after the circulation of the treatment liquid is started, As a result, the processing liquid in the circulation line 104 may be contaminated. When the processing liquid is contaminated in the circulation line 104 like this, the foreign matter in the processing liquid must be removed by the filter 108 by re-circulating for a long period of time. Therefore, the substrate processing system 1 is restored. Time-consuming situations.

Therefore, in the embodiment, it is designed to appropriately control the discharge pressure of the pump 106 and the valve opening and closing degree of the back pressure valve 114 to prevent foreign matter from passing through the filter 108 after the circulation of the treatment liquid is started. Next, details of the control will be described with reference to FIGS. 6 and 7.

FIG. 6 is a diagram showing changes in the discharge pressure of the pump 106 and the valve opening and closing degree of the back pressure valve 114 in the embodiment. As shown in FIG. 6, in the processing fluid supply source 70, the valve opening-and-closing degree maintaining process is performed before the time T1 which rises from the pump 106 (step S1).

In the valve opening and closing degree maintaining process, the valve opening and closing degree of the back pressure valve 114 is constantly maintained at a predetermined valve opening and closing degree V1 by controlling the back pressure valve 114. In other words, in the valve opening-closing degree maintaining process, there is no relation to the pressure value of the processing liquid in the upstream side of the back pressure valve 114, and no general valve opening-closing control is performed in the back pressure valve 114.

In the valve opening / closing degree maintaining process, for example, the back pressure valve 114 is constantly maintained to be fully opened. When the pump 106 is started, the valve opening and closing degree is maintained.

The continuous valve opening and closing degree maintaining process is performed in the process fluid supply source 70 by a cycle start process (step S2). In this cycle start process, the pump 106 is started at time T1 by controlling the pump 106.

Here, when the cycle starts processing, the pump 106 is controlled to start the pump 106 so that the discharge pressure of the pump 106 becomes a predetermined first pressure P1. The first pressure P1 is smaller than the second pressure P2 which is the maximum discharge pressure of the pump 106. In addition, as a means for operating the pump 106 at a first pressure P1 that is lower than the maximum discharge pressure (second pressure P2), for example, the regulator is simply added to the pump 106, and the regulator is operated at a low pressure (first pressure P1) The high pressure (second pressure P2) may be switched to this discharge pressure.

FIG. 7 is a diagram showing the transition of the differential pressure between the upstream side and the downstream side of the filter 108 in the embodiment and the reference example. The reference example shown in FIG. 7 is different from the embodiment. At time T1, the pump 106 is started at the second pressure P2, which is the maximum discharge pressure. Before the pump 106 is started, the discharge pressure of the pump 106 is not applied to the upstream side of the back pressure valve 114. Therefore, the control of the back pressure valve 114 is in a state in which it is not in effect.

Therefore, in the reference example, the control of the back pressure valve 114 is started after the pump 106 is raised to the second pressure P2 and a discharge pressure is applied upstream of the back pressure valve 114. However, since there is a predetermined time delay until the control is stable, the back pressure valve 114 is in an uncontrolled state until the time Ta when the control is stable.

That is, in the upstream side of the filter 108, the processing liquid is discharged from the pump 106 at the maximum discharge pressure, and in the downstream side of the filter 108, the system back pressure valve 114 is in an uncontrolled state. Thereby, as shown in FIG. 7, the time Ta from the rising time T1 of the pump 106 to the time Ta during which the control of the back pressure valve 114 takes effect is between the upstream side and the downstream side of the filter 108, and is applied as if exceeding the filter 108. The differential pressure Dc is as large as the differential pressure resistance. Therefore, in the reference example, the foreign matter may pass through the filter 108 due to the large differential pressure Dc.

On the other hand, in the embodiment, the circulation of the treatment liquid in the pipeline 104 is started while controlling the first pressure P1 of the pump 106 to be lower than the maximum discharge pressure (the second pressure P2). This makes it possible to reduce the pressure applied to the upstream side of the filter 108 when the pump 106 is started.

That is, by controlling the discharge pressure of the pump 106 to the first pressure P1 and starting the circulation of the processing liquid, the differential pressure between the upstream side and the downstream side of the filter 108 can be suppressed to be smaller than that in the reference example. The differential pressure Da of the differential pressure Dc. Therefore, according to the embodiment, it is possible to prevent foreign matter from passing through the filter 108 due to the discharge pressure of the pump 106 after the circulation of the processing liquid is started.

In the embodiment, the valve opening and closing degree maintaining process is used to control the back pressure valve 114 to be fully opened when the pump 106 is activated. Accordingly, even when the processing liquid discharged from the pump 106 is discharged at the first pressure P1 which is less than the maximum discharge pressure, the flow rate of the processing liquid in the circulation line 104 can be sufficiently ensured. With this, even if air is mixed into the pump 106, it is possible to prevent the air from staying inside the pump 106, and to prevent the bad condition caused by the air from being mixed into the pump 106.

In the valve opening-closing degree maintaining process, the back pressure valve 114 may not be fully opened, as long as the valve opening-closing degree V1 is constant so as to ensure the flow rate of the processing liquid in the circulation line 104. Thereby, even if it discharges at the 1st pressure P1, the flow volume of the processing liquid in the circulation line 104 can be fully ensured.

Return to the description of FIG. 6. The subsequent cycle starts the process. In the process fluid supply source 70, the valve opening and closing degree control process is performed (step S3). In this valve opening / closing degree control process, the control of the valve opening / closing degree of the back pressure valve 114 is started at time T2.

In addition, the "control of the valve opening and closing degree" means that when the pressure of the processing liquid in the upstream side of the back pressure valve 114 is greater than a desired pressure, the valve opening and closing degree is increased, and the processing liquid in the upstream side is increased. In the case where the pressure is smaller than the desired pressure, the valve opening and closing degree is reduced so that the pressure in the upstream side of the back pressure valve 114 is constantly controlled to the desired pressure.

After the valve opening / closing degree control processing (that is, later than time T2), as shown in FIG. 6, the valve opening / closing degree of the back pressure valve 114 is controlled to be smaller. This is because the discharge pressure of the pump 106 is smaller than the first pressure P1 of the maximum discharge pressure. Therefore, in order to increase the pressure in the upstream side of the back pressure valve 114 to a desired pressure, it is necessary to squeeze the pressure through the back pressure valve. 114 的 treatment solution.

The valve opening / closing degree control processing is performed in the process fluid supply source 70 (step S4). In this step-up process, a predetermined time elapses from time T1 to time T3 when the differential pressure stabilizes, and the discharge pressure of the pump 106 is increased from the first pressure P1 to the second pressure P2, which is the maximum discharge pressure. In addition, as shown in FIG. 6, at time T3, the valve opening and closing degree of the back pressure valve 114 is reduced to a valve opening and closing degree V2 that is smaller than the valve opening and closing degree V1 in the valve opening and closing degree maintaining process.

With this boosting process, the pressure on the upstream side of the filter 108 increases. However, in the embodiment, the valve opening and closing degree of the back pressure valve 114 is reduced to the valve opening and closing degree V2 by the valve opening and closing degree control process. Therefore, the upstream side of the back pressure valve 114 (that is, the filter 108) The pressure in the downstream side) also increases.

As a result, as shown in FIG. 7, after the start of the discharge at the maximum discharge pressure (that is, after the time T3), it is possible to suppress a large increase in the differential pressure Db applied between the upstream side and the downstream side of the filter 108. situation. Therefore, according to the embodiment, it is possible to suppress foreign matter from passing through the filter 108 after the boosting process.

＜ Processing steps ＞
Next, a procedure of various processes according to the embodiment will be described with reference to FIGS. 8 and 9. FIG. 8 is a flowchart showing a substrate processing program executed by the substrate processing system 1.

As shown in FIG. 8, the processing unit 16 first performs a carry-in process (step S101). During the loading process, the system control unit 18 controls the substrate transfer device 17 to carry the wafer W into the chamber 20 of the processing unit 16. The wafer W is held by the holding member 311 in a state where the surface on which the substrate is processed faces upward. Thereafter, the control unit 18 controls the driving unit 33 to rotate the substrate holding mechanism 30 by a predetermined number of rotations.

Next, the processing unit 16 performs a first washing process (step S102). In the first cleaning process, the system control unit 18 moves the nozzle 41 a of the processing fluid supply unit 40 to a position above the center of the wafer W. Thereafter, the control unit 18 opens the valve 44a for a predetermined time, thereby supplying HFC, which is a CF-based cleaning solution, to the surface of the wafer W.

The HFC supplied to the surface of the wafer W is spread over the entire surface of the wafer W by a centrifugal force accompanying the rotation of the wafer W. Thereby, the fluorine-based polymer adhering to the wafer W is removed by HFC.

Next, the processing unit 16 performs a second washing process (step S103). In the second cleaning process, the system control unit 18 moves the nozzle 41 b of the processing fluid supply unit 40 above the center of the wafer W. Thereafter, the control unit 18 opens the valve 44b for a predetermined time, thereby supplying DHF, which is a cleaning solution for residues, to the surface of the wafer W.

The DHF supplied to the surface of the wafer W is spread over the entire surface of the wafer W by a centrifugal force accompanying the rotation of the wafer W. Thereby, the residue adhered to the wafer W is removed by DHF.

Next, the processing unit 16 performs a flushing process (step S104). In the flushing process, the system control unit 18 moves the nozzle 41c of the processing fluid supply unit 40 to the center of the wafer W, and opens the valve 44c for a predetermined time, thereby supplying DIW, which is a flushing liquid, to the wafer W. surface.

The DIW supplied to the surface of the wafer W is spread over the entire surface of the wafer W by a centrifugal force accompanying the rotation of the wafer W. Thereby, DHF remaining on the surface of the wafer W is removed by DIW.

Next, the processing unit 16 performs a replacement process (step S105). In the replacement process, the system control unit 18 moves the nozzle 41d of the processing fluid supply unit 40 above the center of the wafer W, and opens the valve 44d for a predetermined time, thereby supplying IPA, which is a solvent, to the surface of the wafer W .

The IPA supplied to the surface of the wafer W is spread over the entire surface of the wafer W by a centrifugal force accompanying the rotation of the wafer W. Thereby, the DIW remaining on the surface of the wafer W is replaced with IPA.

Next, the processing unit 16 performs a drying process for drying the wafer W (step S106). In the drying process, for example, the control unit 18 controls the drive unit 33 to rotate the substrate holding mechanism 30 at a high speed, thereby throwing off the IPA held on the wafer W held by the holding member 311.

Thereafter, the processing unit 16 performs a carry-out process (step S107). In the unloading process, the system control unit 18 controls the drive unit 33 and, after stopping the rotation of the wafer W, controls the substrate transfer device 17 to unload the wafer W from the processing unit 16. When this unloading process is completed, a series of substrate processes for one wafer W is completed.

FIG. 9 is a flowchart showing a procedure of liquid processing performed by the processing fluid supply source 70. This process is performed after the processing liquid exchange operation or the restoration operation from the failure. As shown in FIG. 9, in the processing fluid supply source 70, the valve opening-and-closing degree maintaining process is performed first (step S111). In the valve opening and closing degree maintaining process, the control unit 18 controls the back pressure valve 114, and the valve opening and closing degree of the back pressure valve 114 is constantly maintained at a predetermined valve opening and closing degree V1. In this valve opening / closing degree maintaining process, for example, the back pressure valve 114 is constantly maintained to be fully opened.

Next, the process fluid supply source 70 performs a cycle start process (step S112). In the cycle start processing, the control unit 18 controls the pump 106 to start the circulation of the processing liquid in the circulation line 104. In the cycle start process, the discharge pressure when the pump 106 is started is controlled at a first pressure P1 that is less than the maximum discharge pressure (second pressure P2).

Next, in the processing fluid supply source 70, a valve opening and closing degree control process is performed (step S113). In the valve opening and closing degree control process, the control unit 18 controls the back pressure valve 114 so that the valve opening and closing degree is controlled so that the pressure on the upstream side of the back pressure valve 114 is constant to a desired pressure. In addition, in the embodiment, since the discharge pressure of the pump 106 is the first pressure P1 which is smaller than the maximum discharge pressure, it is controlled to reduce the valve opening and closing degree of the back pressure valve 114.

Thereafter, in the processing fluid supply source 70, a boosting process is performed (step S114). In the pressure increasing process, the control unit 18 controls the pump 106 to increase the discharge pressure of the pump 106 from the first pressure P1 to the second pressure P2, which is the maximum discharge pressure. When the pressure increasing process is completed, a series of liquid processes of the processing fluid supply source 70 is completed.

Although the embodiments of the present invention have been described above, the present invention is not limited to those described above, and various changes can be made without departing from the spirit thereof. For example, in the embodiment, an example is shown in which the discharge pressure of the pump 106 is increased to the second pressure P2, which is the maximum discharge pressure, in the boosting process. However, the second pressure P2 may not be a pump. Maximum discharge pressure of 106.

The liquid processing apparatus according to the embodiment includes a storage tank 102, a circulation line 104, a pump 106, a filter 108, a back pressure valve 114, and a control unit 18. The storage tank 102 stores a processing liquid. The circulation line 104 returns the processing liquid transported from the storage tank 102 to the storage tank 102. The pump 106 forms a circulating flow of the processing liquid in the circulating line 104. The filter 108 is provided on the downstream side of the pump 106 in the circulation line 104. The back pressure valve 114 is provided on the downstream side of the filter 108 in the circulation line 104. The control unit 18 controls the pump 106 and the back pressure valve 114. Further, the control unit 18 raises the discharge pressure of the pump 106 to a predetermined first pressure P1 when the circulation of the processing liquid in the circulation line 104 is started, and causes the discharge pressure of the pump 106 to pass after a predetermined time has elapsed The method of increasing the pressure to the second pressure P2 which is greater than the first pressure P1 controls the discharge pressure of the pump 106. With this, it is possible to suppress the situation where foreign matter passes through the filter 108 due to the discharge pressure of the pump 106 after the circulation of the treatment liquid is started.

Further, in the liquid processing apparatus of the embodiment, the control unit 18 controls the back pressure so that the back pressure valve 114 becomes constant at a predetermined valve opening and closing degree V1 when the processing liquid in the circulation line 104 is started. Valve 114. Thereby, even when the processing liquid discharged from the pump 106 is discharged at the first pressure P1 which is smaller than the maximum discharge pressure, the flow rate of the processing liquid in the circulation line 104 can be sufficiently ensured.

In the liquid processing apparatus according to the embodiment, the control unit 18 controls the back pressure valve 114 so that the back pressure valve 114 is kept fully open at the time when the circulation of the processing liquid in the circulation line 104 is started. With this, even if air is mixed into the pump 106, it is possible to prevent the air from staying inside the pump 106, and to prevent the bad condition caused by the air from being mixed into the pump 106.

In the liquid processing apparatus according to the embodiment, the control unit 18 changes the valve opening and closing degree from a predetermined valve opening and closing degree V1 before the discharge pressure of the pump 106 increases from the first pressure P1 to the second pressure P2. In a small way, the back pressure valve 114 is controlled. Thereby, it is possible to suppress a situation where the differential pressure applied between the upstream side and the downstream side of the filter 108 is excessively increased after the boosting process.

The liquid processing apparatus according to the embodiment further includes a connection portion 110 provided between the filter 108 and the back pressure valve 114 in the circulation line 104 and connected to supply a processing liquid to a processing substrate (wafer). W) branch line 112 of the processing unit (processing unit 16). This makes it possible to smoothly supply the processing liquid from the processing fluid supply source 70 to the processing unit 16.

The liquid processing method according to the embodiment includes a cycle start process (step S112) and a step-up process (step S114). The cycle start process (step S112) is to return the processing liquid transported from the storage tank 102 to the circulation line 104 of the storage tank 102, and when the circulation of the processing liquid is started, the processing liquid in the circulation line 104 is formed. The discharge pressure of the circulating-flow pump 106 rises to a predetermined first pressure P1. The step-up process (step S114) is to increase the discharge pressure of the pump 106 to a second pressure P2 that is greater than the first pressure P1 after a predetermined time has elapsed. With this, it is possible to suppress the situation where foreign matter passes through the filter 108 due to the discharge pressure of the pump 106 after the circulation of the treatment liquid is started. The discharge pressure of the pump 106 may be gradually increased when the discharge pressure of the pump 106 is increased to the first pressure P1, or when the discharge pressure of the pump 106 is increased from the first pressure P1 to the second pressure P2. Accordingly, it is possible to further suppress the situation where foreign matter passes through the filter 108 due to the discharge pressure of the pump 106.

Further effects or modifications can be easily derived by those having ordinary knowledge in the technical field of the invention. Therefore, a broader aspect of the present invention is not limited to the specific details and representative embodiments described and described above. Therefore, various changes can be made without departing from the spirit or scope of all inventive concepts defined by the scope of the appended patent applications and their equivalents.

W‧‧‧ Wafer

1‧‧‧ substrate processing system

16‧‧‧Processing unit

18‧‧‧Control Department

70‧‧‧ treatment fluid supply source

102‧‧‧ storage tank

104‧‧‧Circulation pipeline

106‧‧‧ pump

108‧‧‧ Filter

110‧‧‧ Connection Department

114‧‧‧Back pressure valve

[Fig. 1] Fig. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment.

[Fig. 2] Fig. 2 is a schematic diagram showing a configuration of a processing unit.

[Fig. 3] Fig. 3 is a schematic diagram showing a specific configuration example of a processing unit.

[Fig. 4] Fig. 4 is a diagram showing an outline of a substrate cleaning process in the embodiment.

[FIG. 5] FIG. 5 is a diagram showing a schematic configuration of a processing fluid supply source according to the embodiment.

[Fig. 6] Fig. 6 is a diagram showing changes in the discharge pressure and the valve opening / closing degree of the pump in the embodiment.

[FIG. 7] FIG. 7 is a view showing transitions of differential pressures between the upstream side and the downstream side of the filter in the embodiment and the reference example.

[FIG. 8] FIG. 8 is a flowchart showing a substrate processing program executed by the substrate processing system.

[Fig. 9] Fig. 9 is a flowchart showing a procedure of liquid processing performed by a processing fluid supply source.

Claims (6)

A liquid processing device, characterized in that: Storage tank for storing processing liquid; Circulate the pipeline to return the processing liquid transported from the storage tank to the storage tank; A pump to form a circulating flow of the treatment liquid in the circulation line; A filter provided on the downstream side of the pump in the circulation line; A back pressure valve is provided on the downstream side of the filter in the circulation line; and The control unit controls the pump and the back pressure valve. The control unit is configured to increase the discharge pressure of the pump to a predetermined first pressure when the circulation of the treatment liquid in the circulation line is started, and to increase the discharge pressure of the pump to a predetermined time after a predetermined time elapses. The second pressure is greater than the first pressure, and the discharge pressure of the pump is controlled. For example, the liquid treatment device of the scope of application for patent No. 1 wherein: The control unit controls the back pressure valve such that the back pressure valve is constantly at a predetermined valve opening and closing degree when the circulation of the processing liquid in the circulation line is started. For example, the liquid treatment device in the scope of patent application No. 2 wherein: The control unit controls the back pressure valve so that the back pressure valve is constantly fully opened when the circulation of the processing liquid in the circulation line is started. For example, the liquid treatment device in the scope of patent application No. 2 or 3, in which, The control unit controls the back pressure valve so that the valve opening and closing degree gradually decreases from a predetermined valve opening and closing degree before the discharge pressure of the pump increases from the first pressure to the second pressure. For example, the liquid treatment device in the scope of patent application No. 2 or 3, among which, it further includes: The connection portion is provided between the filter and the back pressure valve in the circulation line, and is connected to a branch line that supplies the processing liquid to a processing portion of a processing substrate. A liquid processing method, characterized in that it includes: In the cycle start process, when the processing liquid transported from the storage tank is returned to the circulation line of the storage tank, when the circulation of the processing liquid is started, a pump for forming a circulation flow of the processing liquid in the circulation line is formed. The discharge pressure rises to a predetermined first pressure; and In the boosting process, after a predetermined time has elapsed, the discharge pressure of the pump is increased to a second pressure greater than the first pressure.