TW202143301A - Substrate processing method and substrate processing device - Google Patents

Abstract

A substrate processing method according to an embodiment of the present invention includes a forming step, a drying step, and a plasma step. The forming step is for forming on the substrate a liquid film including an organic substance. The drying step is for drying the substrate on which the liquid film has been formed. The plasma step is for performing plasma processing on the substrate having been dried.

Description

Substrate processing method and substrate processing device

This disclosure relates to a substrate processing method and a substrate processing device.

Patent Document 1 discloses that after a hydrophobizing agent is supplied to the surface of a substrate to be hydrophobized, the hydrophobizing agent is replaced with a solvent, and the solvent is removed from the substrate to dry the substrate. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] JP 2012-44065 A

[The problem to be solved by the invention]

The present disclosure provides a technique for removing particles attached to the substrate. [Means to solve the problem]

The substrate processing method according to one aspect of the present disclosure includes a formation process, a drying process, and a plasma process. The formation process is to form a liquid film containing organic substances on the substrate. The drying process dries the substrate on which the liquid film is formed. The plasma engineering department performs plasma treatment on the dried substrate. [Effects of the invention]

According to the present disclosure, the particles attached to the substrate can be removed.

Hereinafter, with reference to the attached drawings, the implementation of the substrate processing method and substrate processing device disclosed in this case will be described in detail. In addition, the substrate processing method and substrate processing apparatus disclosed in the embodiments shown below are not limited.

(First implementation type) ＜Overview of substrate processing system＞ First, referring to FIG. 1, the schematic configuration of the substrate processing system 1 related to the first embodiment will be described. FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to the first embodiment. In the following, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

As shown in FIG. 1, the substrate processing system 1 (an example of a substrate processing apparatus) includes a carry-in and carry-out station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are adjacently installed.

The carry-in and carry-out station 2 includes a carrier placing section 11 and a conveying section 12. In the carrier mounting portion 11, a plurality of substrates are placed in a horizontal state, and in the embodiment, it is a plurality of carriers C of a semiconductor wafer W (hereinafter referred to as a wafer W).

The conveying section 12 is provided adjacent to the carrier placing section 11, and includes a substrate conveying device 13 and a receiving section 14 inside. The substrate conveying device 13 includes a wafer holding mechanism that holds the wafer W. Furthermore, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfer the wafer W between the carrier C and the receiving unit 14 using a wafer holding mechanism.

The processing station 3 is installed adjacent to the conveying unit 12. The processing station 3 includes a conveying unit 15, a plurality of first processing units 16 (an example of a drying unit), and a plurality of second processing units 18 (an example of a plasma processing unit). In addition, at least one of the first processing unit 16 or the second processing unit 18 may be provided.

The conveying unit 15 includes a board conveying device 17 inside. The substrate transport device 17 includes a wafer holding mechanism that holds the wafer W. Furthermore, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfer the wafer W between the receiving unit 14 and the first processing unit 16 using a wafer holding mechanism. Furthermore, the substrate conveying device 17 conveys the wafer W between the first processing unit 16 and the second processing unit 18. In addition, the substrate conveying device 17 conveys the wafer W between the second processing unit 18 and the receiving unit 14.

The first processing unit 16 performs specific substrate processing on the wafer W conveyed by the substrate conveying device 17. A configuration example of the first processing unit 16 will be described later.

The second processing unit 18 performs plasma processing on the wafer W subjected to the specific substrate processing by the first processing unit 16. A configuration example of the second processing unit 18 will be described later.

Furthermore, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 4A and a storage unit 4B.

The storage unit 4B stores programs for controlling various processes executed in the substrate processing system 1. The memory unit 4B is realized by a semiconductor memory device such as RAM (Random Access Memory), Flash Memory, etc., or a memory device such as a hard disk or an optical disk.

The control unit 4A controls the operation of the substrate processing system 1 by reading and executing the program stored in the memory unit 4B. In addition, the program is recorded in a storage medium readable by a computer, even if it is installed in the storage section 4B of the control device 4 from the storage medium. As a storage medium that can be read by a computer, there are hard disks (HD), floppy disks (FD), compact discs (CD), magneto-optical discs (MO), memory cards, etc., for example.

In the substrate processing system 1 configured as described above, first, the substrate transport device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement portion 11, and places the taken out wafer W in the storage. Grant Department 14. The wafer W placed on the receiving unit 14 is taken out from the receiving unit 14 by the substrate conveying device 17 of the processing station 3 and carried into the first processing unit 16.

After the wafer W carried into the first processing unit 16 is processed by the first processing unit 16, it is carried out from the first processing unit 16 by the substrate conveying device 17 and carried into the second processing unit 18.

The wafer W carried into the second processing unit 18 is processed by the second processing unit 18 and then placed on the receiving unit 14 by the substrate conveying device 17. Then, the processed wafer W placed on the receiving section 14 is returned to the carrier C of the carrier placing section 11 by the substrate conveying device 13.

<The first processing unit> Next, the first processing unit 16 will be described with reference to FIG. 2. FIG. 2 is a schematic diagram showing the structure of the first processing unit 16 according to the first embodiment. As shown in FIG. 2, the first processing unit 16 includes a chamber 20, a substrate holding mechanism 30, a processing fluid supply unit 40, and a recovery cup 50.

The chamber 20 accommodates the substrate holding mechanism 30, the processing fluid supply part 40 and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the cavity 20. The FFU21 forms a downward flow in the chamber 20.

The substrate holding mechanism 30 includes a holding portion 31, a support portion 32 and a driving portion 33. The holding part 31 holds the wafer W horizontally. The pillar portion 32 is a member that extends in the vertical direction. The base end portion is rotatably supported by the drive portion 33, and the rotation holding portion 31 is horizontally supported at the front end portion. The driving part 33 rotates the pillar part 32 about a vertical axis.

The substrate holding mechanism 30 rotates the support part 32 by using the drive part 33 to rotate the holding part 31 supported by the support part 32. According to this, the wafer W held by the holding portion 31 rotates.

The processing fluid supply unit 40 supplies the processing fluid to the wafer W. Specifically, the processing fluid supply unit 40 supplies a chemical solution, for example, DHF (Diluted HydroFluoric acid: dilute hydrofluoric acid aqueous solution), to the wafer W from the nozzle 41 a. DHF is used for oxide film removal treatment. The nozzle 41a is connected to the DHF supply source 42a via a valve body (not shown) or a flow regulator (not shown). In addition, the chemical solution is not limited to DHF, even SC1 (a mixed liquid of ammonia, hydrogen peroxide, and water) or SC2 (a mixed liquid of hydrochloric acid and hydrogen peroxide). Furthermore, the chemical solution may be SPM (Sulfuric Acid Hydrogen Peroxide Mixture), BHF (mixture of hydrofluoric acid and ammonium fluoride solution), coating developer, or plating solution.

In addition, the processing fluid supply unit 40 supplies DIW (DeIonized Water) to the wafer W from the nozzle 41b. DIW is used for flushing treatment. The nozzle 41b is connected to the DIW supply source 42b via a valve body (not shown) or a flow regulator (not shown).

In addition, the processing fluid supply unit 40 supplies IPA (IsoPropyl Alcohol) to the wafer W from the nozzle 41c. IPA is used for drying treatment. The nozzle 41c is connected to the IPA supply source 42c via a valve body (not shown) or a flow regulator (not shown).

The recovery cup 50 is arranged so as to surround the holding portion 31 and supplements the processing liquid scattered from the wafer W by the rotation of the holding portion 31. A liquid discharge port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the liquid discharge port 51 to the outside of the first processing unit 16. Furthermore, an exhaust port 52 for exhausting the gas supplied from the FFU 21 to the outside of the first processing unit 16 is formed at the bottom of the recovery cup 50.

The first processing unit 16 supplies a chemical solution to the wafer W to perform oxide film removal processing. Next, the first processing unit 16 supplies DIW to the wafer W subjected to the oxide film removal process, and performs a rinse process. In addition, the first processing unit 16 supplies IPA to the wafer W subjected to the rinse processing to rotate the wafer W and perform drying processing.

＜Second processing unit＞ Next, the second processing unit 18 will be described with reference to FIG. 3. FIG. 3 is a schematic diagram showing the structure of the second processing unit 18 according to the first embodiment. The second processing unit 18 includes a chamber 60, a pair of electrodes 70, and a gas supply unit 80.

The wafer W dried by the first processing unit 16 is transported in the chamber 60. An exhaust pipe 61 is provided at the bottom of the chamber 60, and an exhaust device 62 is connected via the exhaust pipe 61. The exhaust device 62 has a vacuum pump (not shown). By the operation of the vacuum pump, the chamber 60 is decompressed to a predetermined vacuum degree set in advance.

The pair of electrodes 70 is composed of a lower electrode 71 and an upper electrode 72. The wafer W is placed on the lower electrode 71. That is, the lower electrode 71 functions as a mounting base.

The lower electrode 71 is connected to a first RF power source 74a via a first matching device 73a. In addition, the second RF power source 74b is connected to the lower electrode 71 via the second matching unit 73b.

The first RF power supply 74a is a power supply for plasma generation, and supplies the lower electrode 71 with high-frequency power of a specific frequency set in advance. The second RF power source 74b is a power source for ion attraction (for bias), and supplies the lower electrode 71 with high-frequency power having a frequency lower than that of the first RF power source 74a.

The upper electrode 72 is arranged above the lower electrode 71. The upper electrode 72 is arranged to face the lower electrode 71. The upper electrode 72 is electrically connected to a variable DC power source 76 via a low-pass filter 75. The variable DC power supply 76 can be switched on and off by the switch 77. The switch 77 is turned on when high frequency is applied from the first RF power source 74a and the second RF power source 74b to the lower electrode 71 to generate plasma. Accordingly, the upper electrode 72 is applied with a specific DC voltage set in advance.

The gas supply unit 80 is provided in plural on the upper electrode 72 and is connected to the gas supply source 81. The gas supply part 80 communicates with the processing chamber 60 a of the chamber 60 at its lower end, and supplies the reaction gas to the processing chamber 60 a of the chamber 60. The reaction gas system is, for example, O ₂ gas. In addition, the reaction gas is not limited to O ₂ gas, and may be an oxygen-containing gas such as CO gas, CO ₂ gas, and O _{3 gas.}

The second processing unit 18 is in a state where the wafer W is placed on the lower electrode 71, and the chamber 60 is decompressed to a certain degree of vacuum by the exhaust device 62. Next, the second processing unit 18 supplies the reaction gas to the chamber 60 through the gas supply unit 80. In addition, the second processing unit 18 supplies high-frequency power to the lower electrode 71 and supplies direct current power to the upper electrode 72. _{Accordingly, O 2} plasma is generated in the chamber 60, and the organic matter remaining on the wafer W is decomposed and removed. That is, the second processing unit 18 generates O _{2 plasma (oxygen plasma), and supplies the O 2} plasma to the wafer W (an example of the substrate).

In the wafer W after the drying process by the first processing unit 16, the organic matter contained in the IPA may remain as fine particles. The second processing unit 18 removes particles remaining on the wafer W by performing plasma processing.

In addition, the frequency of the high-frequency power generated by the first RF power supply 74a and the second RF power supply 74b is not particularly limited. In addition, although an example is given here to describe the second processing unit 18 provided with the second RF power supply 74b, it is not limited to this, and the second processing unit 18 may not be provided with the second RF power supply 74b.

[Substrate Treatment] Next, the substrate processing according to the first embodiment will be described with reference to FIG. 4. Fig. 4 is a flowchart of substrate processing according to the first embodiment.

The control device 4 performs the first carry-in process (S100). Specifically, the control device 4 transfers the wafer W into the chamber 20 of the first processing unit 16 by the substrate transfer device 17. The control device 4 rotates the holding part 31 after holding the wafer W by the holding part 31. That is, the control device 4 rotates the wafer W.

The control device 4 performs an oxide film removal process (S101). Specifically, the control device 4 supplies DHF to the surface of the wafer W from the nozzle 41a. The DHF supplied to the wafer W spreads over the entire surface of the wafer W by the centrifugal force following the rotation of the wafer W. Accordingly, the natural oxide film formed on the wafer W is removed by DHF.

The control device 4 performs a flushing process (S102). Specifically, the control device 4 supplies DIW to the surface of the wafer W from the nozzle 41b. When DIW is supplied to the surface of the wafer W, the DHF remaining on the surface of the wafer W is replaced with DIW.

The control device 4 performs a drying process (S103). Specifically, the control device 4 supplies IPA to the surface of the wafer W from the nozzle 41c. When IPA is supplied to the surface of the wafer W, the DIW remaining on the surface of the wafer W is replaced with IPA to form a liquid film of IPA. That is, a liquid film of IPA (an example of a liquid film containing an organic substance) is formed on the wafer W (an example of a substrate). Furthermore, the control device 4 stops the supply of IPA after the DIW is replaced with IPA, and spin-drys the wafer W. That is, the control device 4 dries the wafer W (an example of the substrate) on which the liquid film of IPA is formed.

The control device 4 performs the second carry-in process (S104). Specifically, the control device 4 unloads the wafer W from the chamber 20 of the first processing unit 16 by the substrate transport device 17 and carries the wafer W into the chamber 60 of the second processing unit 18. The wafer W is placed on the lower electrode 71.

The control device 4 performs plasma processing (S105). That is, plasma processing is performed on the dried wafer W (an example of the substrate). Specifically, the control device 4 is located after the decompression chamber 60 and supplies the reaction gas to the chamber 60. In addition, the control device 4 supplies high-frequency power to the lower electrode 71 and direct current power to the upper electrode 72 to generate O ₂ plasma. O ₂ plasma is used to remove particles such as organic matter remaining on the surface of the wafer W.

The control device 4 performs the unloading process (S106). Specifically, the control device 4 controls the substrate transport device 17 to carry out the wafer W from the second processing unit 18.

Here, FIG. 5 shows the particle removal evaluation of the substrate processing according to the first embodiment. FIG. 5 is a diagram showing the evaluation of particle removal by the substrate processing apparatus according to the first embodiment. Figure 5 shows the number of particles after spin drying and plasma treatment. In addition, FIG. 5 is a graph showing the relative evaluation of particles after plasma treatment with respect to the number of particles after spin drying.

It can be seen that in the case of the substrate processing according to the first embodiment, by performing plasma processing, the number of particles can be significantly reduced compared to after spin drying. That is, it can be seen that in the substrate processing according to the first embodiment, particles are removed _{by O 2 plasma.}

<Effect> The substrate processing method includes forming process, drying process and plasma process. The formation process is to form a liquid film of IPA (an example of a liquid film containing organic substances) on the wafer W (an example of a substrate). The drying process dries the wafer W on which the liquid film is formed. Specifically, the drying process rotates the wafer W on which the liquid film of IPA is formed to dry the wafer W. The plasma engineering department performs plasma processing on the dried wafer W.

According to this, the substrate processing system 1 can remove the particles attached to the wafer W when the particles are attached to the wafer W due to IPA or the like.

The plasma process is performed in a chamber 60 different from the chamber 20 in which the drying process is performed. According to this, the substrate processing system 1 can simplify the configurations of the first processing unit 16 that performs drying processing and the like, and the second processing unit 18 that performs plasma processing.

The plasma engineering system generates O _{2 plasma (oxygen plasma), and supplies the O 2} plasma to the wafer W (an example of the substrate).

Accordingly, the substrate processing system 1 can remove particles attached to the wafer W.

(Second implementation type) ＜Substrate Processing System＞ Next, the substrate processing system 1 related to the second embodiment will be described with reference to FIG. 6. FIG. 6 is a diagram showing a schematic configuration of the substrate processing system 1 according to the second embodiment. Here, a description will be given of differences from the substrate processing system 1 according to the first embodiment. Regarding the same configuration as that of the substrate processing system 1 according to the first embodiment, the same reference numerals as those of the substrate processing system 1 according to the first embodiment are assigned, and detailed descriptions are omitted.

The processing station 3 of the substrate processing system 1 includes a conveying unit 12, a plurality of cleaning processing units 100, and a plurality of drying processing units 101 (an example of a drying unit and a plasma processing unit). In addition, at least one of the washing treatment unit 100 or the drying treatment unit 101 may be provided.

The configuration of the washing treatment unit 100 is the same as the configuration of the first treatment unit 16 of the first embodiment, and detailed description is omitted.

The cleaning processing unit 100 performs an oxide film removal process and a rinse process on the wafer W, and then performs a liquid film formation process of forming a liquid film of IPA on the surface of the wafer W. Specifically, the cleaning processing unit 100 rotates the wafer W while supplying IPA to replace DIW with IPA, and then gradually stops the rotation of the wafer W. Accordingly, a liquid film of IPA is formed on the surface of the wafer W.

＜Drying treatment unit＞ Next, the drying treatment unit 101 according to the second embodiment will be described with reference to FIG. 7. FIG. 7 is a schematic diagram showing the structure of the drying treatment unit 101 according to the second embodiment. The drying processing unit 101 uses a supercritical fluid to dry the wafer W on which the liquid film of IPA is formed by the cleaning processing unit 100. Furthermore, the drying processing unit 101 performs plasma processing on the wafer W to be dried.

Supercritical fluid is a treatment fluid in a supercritical state. The treatment fluid is, for example, CO ₂ . In addition, the treatment fluid is not limited to CO ₂ .

The drying processing unit 101 includes a chamber 110, a holding plate 120, a cover member 130, a fluid supply part 140, an exhaust part 150, and a plasma generator 160.

In the chamber 110, an opening 111 for carrying in and out of the wafer W is formed. The holding plate 120 holds the wafer W to be processed in a horizontal direction. The cover member 130 supports such a holding plate 120 and seals the opening 111 when the wafer W is carried into the chamber 110.

The fluid supply unit 140 supplies the supercritical fluid to the chamber 110 from the fluid supply source 141. The exhaust unit 150 is connected to the exhaust device 151 and exhausts the processing fluid to the outside of the chamber 110. The discharged treatment fluid contains IPA dissolved in the treatment fluid.

The plasma generator 160 includes a plasma generator 161 and a shower head 162. The plasma generator 160 uses a remote plasma method, and the plasma generator 161 is disposed outside the chamber 110. The plasma generator 161 activates the reaction gas produced from the gas supply source 163 by using plasma generated by a plasma source (not shown). The plasma source uses, for example, inductively coupled plasma and capacitively coupled plasma.

The shower head 162 supplies the free radicals of the reactive gas activated by the plasma generator 161 to the chamber 110. A plurality of ejection holes (not shown) are formed in the shower head 162, and radicals of the activated reaction gas are supplied to the chamber 110 from the plurality of ejection holes.

In addition, the plasma generator 160 is not limited to the configuration having the shower head 162, and even if the nozzle is used to supply the activated radical of the reactive gas to the chamber 110.

The drying processing unit 101 accommodates the wafer W on which the liquid film of IPA is formed in the chamber 110 and supplies the supercritical fluid to the chamber 110. In addition, in the drying processing unit 101, the exhaust device 151 and the like are controlled so that the chamber 110 becomes a predetermined specific pressure. When the supercritical fluid contacts the liquid film of the IPA formed on the wafer W, the liquid IPA is slowly dissolved in the supercritical fluid, and finally replaced with the supercritical fluid.

In addition, the drying processing unit 101 depressurizes the chamber 110 after the IPA existing on the patterning surface of the wafer W is replaced with a supercritical fluid, and makes the chamber 110 atmospheric. Accordingly, the processing fluid existing between the patterns of the wafer W changes from a supercritical state to a normal gas state. In this way, the drying processing unit 101 uses the decompression chamber 110 to dry the wafer W after the liquid of the IPA existing on the pattern forming surface is replaced with the supercritical fluid.

Compared with liquids (such as IPA liquids), supercritical fluids have lower viscosity and higher liquid dissolving ability. There is no interface between the supercritical fluid and the liquid or gas in equilibrium. Therefore, by using supercritical fluid for drying treatment, the liquid can be dried without being affected by surface tension. That is, it is possible to suppress the pattern collapse during the drying process.

The drying processing unit 101 dries the wafer W, activates the reactive gas by the plasma generator 160, supplies radicals of the reactive gas to the chamber 110, and removes particles such as organic matters remaining on the wafer W. The drying processing unit 101 supplies the free radicals of the reaction gas to the chamber 110 after returning to the atmospheric pressure to the chamber. In addition, even if the drying processing unit 101 is exhausted by the exhaust device 151, the radicals of the reaction gas may be supplied to the chamber 110 at the same time.

＜Substrate Treatment＞ Next, the substrate processing according to the second embodiment will be described with reference to FIG. 8. FIG. 8 is a flowchart of substrate processing according to the second embodiment.

The control device 4 performs the first carry-in process (S200). Specifically, the control device 4 transports the wafer W into the chamber 20 of the cleaning processing unit 100 by the substrate transport device 17 (see FIG. 2).

The control device 4 performs an oxide film removal process (S201) and a rinse process (S202).

The control device 4 performs liquid film formation processing (S203). Specifically, the control device 4 supplies IPA to the surface of the wafer W from the nozzle 41c (refer to FIG. 2). In addition, the control device 4 stops the rotation of the wafer W after the DIW remaining on the surface of the wafer W is replaced with IPA, and forms a liquid film of IPA on the wafer W.

The control device 4 performs the second carry-in process (S204). Specifically, the control device 4 uses the substrate transport device 17 to transport the wafer W on which the liquid film of IPA is formed out of the chamber 20 of the cleaning unit 100, and transport the wafer W to the drying unit 101之室110。 The chamber 110.

The control device 4 performs a drying process (S205). Specifically, the control device 4 supplies the supercritical fluid to the chamber 110 to dry the wafer W. That is, the control device 4 uses the processing fluid in the supercritical state to dry the wafer W (an example of the substrate) on which the liquid film of IPA is formed.

The control device 4 performs plasma processing (S206). That is, the plasma processing is performed by the chamber 110 where the wafer W is dried. Specifically, the control device 4 supplies radicals of the reaction gas to the chamber 110 to remove particles such as organic substances remaining on the surface of the wafer W.

The control device 4 performs the unloading process (S207). Specifically, the control device 4 controls the substrate transport device 17 to carry out the wafer W from the drying processing unit 101.

Here, FIG. 9 shows the particle removal evaluation of the substrate processing according to the second embodiment. FIG. 9 is a diagram showing the evaluation of particle removal by substrate processing according to the second embodiment. Figure 9 shows the number of particles after drying and plasma treatment caused by supercritical fluid. In addition, FIG. 9 is a graph showing the relative evaluation of particles after plasma treatment with respect to the number of particles after drying caused by the supercritical fluid.

It can be seen that if the substrate processing according to the second embodiment is used, the plasma processing can greatly reduce the number of particles compared to the drying caused by the supercritical fluid. That is, it can be seen that in the substrate processing according to the second embodiment, particles are removed _{by O 2 plasma.}

<Effect> The substrate processing method includes forming process, drying process and plasma process. The formation process is to form a liquid film of IPA (an example of a liquid film containing organic substances) on the wafer W (an example of a substrate). The drying process dries the wafer W on which the liquid film is formed. Specifically, the drying process uses a processing fluid in a supercritical state to dry the wafer W on which the liquid film of IPA is formed. The plasma engineering department performs plasma processing on the dried wafer W.

Accordingly, the substrate processing system 1 can use a processing fluid in a supercritical state to remove particles attached to the dried wafer W.

The plasma engineering is performed by the chamber 110 where the drying process is performed. According to this, the substrate processing system 1 can remove particles attached to the wafer W, and can miniaturize the entire system.

(Modification) In the substrate processing system 1 according to the first embodiment, although the plasma processing is performed in the second processing unit 18, the plasma processing may also be performed in the first processing unit 16. Specifically, even if the substrate processing system 1 according to the first embodiment is applied to the plasma generator 160 of the substrate processing system 1 according to the second embodiment, plasma processing may be performed. That is, in the substrate processing system 1 that performs spin drying, even if the remote plasma-type plasma generator 160 is used to remove particles such as organic matter remaining on the wafer W.

Furthermore, in the substrate processing system 1 according to the second embodiment, although the plasma processing is performed in the drying processing unit 101, even if the second processing unit of the substrate processing system 1 according to the first embodiment is installed 18. Plasma treatment is also possible. That is, even in the substrate processing system 1 that uses a supercritical fluid to dry the wafer W, a processing unit for plasma processing may be provided separately from the drying processing unit 101. In such a substrate processing system 1, the wafer W dried by the drying processing unit 101 is transported to the processing unit for plasma processing.

In addition, even if the substrate processing system 1 according to the modified example performs the water repellent treatment. The water-repellent treatment is carried out after the flushing treatment. In the substrate processing system 1 according to the modification example, when the water-repellent agent used for the water-repellent treatment remains on the wafer W, the remaining water-repellent agent can be removed by plasma treatment.

In addition, in the substrate processing system 1 according to the modified example, plasma processing may be performed even if a reaction gas containing no oxygen is used. The reaction gas that does not contain oxygen is, for example, H ₂ /N ₂ gas.

According to this, the substrate processing system 1 according to the modification can prevent Si and the like on the surface of the wafer W from being oxidized. That is, even in the wafer W whose surface is not suitable to be oxidized, by performing the plasma treatment, particles such as organic matter remaining on the wafer W can be removed.

In addition, even if the substrate processing system 1 according to the modification example performs plasma processing in a state where the wafer W is not carried into the chambers 60 and 110. That is, cleaning may be performed in a state where there is no wafer W (an example of a substrate) in the chambers 60 and 110, and the cleaning is performed by plasma processing.

According to this, the substrate processing system 1 according to the modification can remove impurities adhering to the chambers 60 and 110 by plasma processing.

In addition, it should be understood that all points of the implementation type disclosed this time are examples and not intended to limit. In fact, the above-mentioned implementation types can be presented in various types. Furthermore, the above-mentioned implementation forms may be omitted, replaced, or changed in various forms without departing from the scope of the appended patent application and the spirit thereof.

1: Substrate processing system (substrate processing device) 3: Processing station 16: The first processing unit (drying part) 18: The second processing unit (plasma processing department) 60: Chamber 70: Electrode 100: Washing processing unit 101: Drying processing unit (drying section, plasma processing section) 110: Chamber 160: Plasma generator 161: Plasma Generation Department 162: Spray head

[FIG. 1] A diagram showing a schematic configuration of a substrate processing system according to the first embodiment. [Fig. 2] is a schematic diagram showing the structure of the first processing unit involved in the first embodiment. [Fig. 3] is a schematic diagram showing the configuration of the second processing unit according to the first embodiment. [Fig. 4] is a flowchart explaining the substrate processing involved in the first embodiment. Fig. 5 is a diagram showing the evaluation of particle removal by the substrate processing apparatus according to the first embodiment. [Fig. 6] is a diagram showing a schematic configuration of a substrate processing system according to a second embodiment. [Fig. 7] A schematic diagram showing the structure of a drying treatment unit according to the second embodiment. [Fig. 8] is a flowchart explaining the substrate processing involved in the second embodiment. [FIG. 9] A diagram showing the evaluation of particle removal by substrate processing according to the second embodiment.

Claims (8)

A substrate processing method, including: Formation process, which is to form a liquid film containing organic matter on the substrate; A drying process, which is to dry the above-mentioned substrate on which the above-mentioned liquid film is formed; and Plasma engineering, which is to perform plasma treatment on the above-mentioned dried substrate. Such as the substrate processing method of claim 1, wherein The plasma process generates oxygen plasma, and supplies the oxygen plasma to the substrate. Such as the substrate processing method of claim 1 or 2, where The said drying process rotates the said board|substrate with the said liquid film formed, and dries the said board|substrate. Such as the substrate processing method of claim 1 or 2, where The drying process uses a processing fluid in a supercritical state to dry the substrate on which the liquid film is formed. Such as the substrate processing method of any one of claims 1 to 4, wherein The above-mentioned plasma processing apparatus is performed by performing the above-mentioned drying process in a chamber. Such as the substrate processing method of any one of claims 1 to 4, wherein The plasma process is performed in a chamber different from the chamber in which the drying process is performed. Such as the substrate processing method of any one of claims 1 to 6, wherein Including the cleaning process of plasma processing without the above-mentioned substrate in the chamber. A substrate processing device, including: The drying part, which dries the substrate on which the liquid film containing organic matter is formed; and The plasma processing section performs plasma processing on the dried substrate.

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