TW201938003A - 構件連接方法及接著帶 - Google Patents

構件連接方法及接著帶 Download PDF

Info

Publication number
TW201938003A
TW201938003A TW108103867A TW108103867A TW201938003A TW 201938003 A TW201938003 A TW 201938003A TW 108103867 A TW108103867 A TW 108103867A TW 108103867 A TW108103867 A TW 108103867A TW 201938003 A TW201938003 A TW 201938003A
Authority
TW
Taiwan
Prior art keywords
adhesive tape
adhesive layer
adhesive
cutting
layer
Prior art date
Application number
TW108103867A
Other languages
English (en)
Other versions
TWI826418B (zh
Inventor
白川哲之
Original Assignee
日商日立化成股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立化成股份有限公司 filed Critical 日商日立化成股份有限公司
Publication of TW201938003A publication Critical patent/TW201938003A/zh
Application granted granted Critical
Publication of TWI826418B publication Critical patent/TWI826418B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/18—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet characterized by perforations in the adhesive tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H01L2224/2711—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
    • H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29012—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29012—Shape in top view
    • H01L2224/29013—Shape in top view being rectangular or square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29012—Shape in top view
    • H01L2224/29014—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/2932—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29369—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29384—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

本構件連接方法包括：切斷步驟，針對接著層3，至少沿接著帶1的寬度方向以規定的間隔形成切斷線C，使藉由切斷線C劃分出的接著層3的區段4至少在接著帶1的長度方向上連續；轉印步驟，區段4以與一被連接構件11A的連接面11a相向的方式進行配置，將具有任意的圖案形狀的加熱加壓工具16自離型件2側壓抵至接著帶1，將區段4選擇性地轉印至一被連接構件11A；以及連接步驟，經由被轉印至一被連接構件11A的區段4而對一被連接構件11A連接另一被連接構件11B。

Description

構件連接方法及接著帶
本發明是有關於一種構件連接方法及接著帶。
先前，已知有一種接著帶，其具有對具有多個電極的被連接構件彼此進行連接、對引線框架進行固定等用途。作為此種接著帶，例如可列舉各向異性導電性帶（ACF：Anisotropic Conductive Film）（例如參照專利文獻1）。各向異性導電帶例如是於將積體電路（Integrated Circuit，IC）、大規模積體電路（Large Scale Integration，LSI）等半導體元件或封裝體（package）等構件連接於印刷配線基板、液晶顯示器（Liquid Crystal Display，LCD）用玻璃基板、可撓性印刷基板等基板時，以保持相對的電極彼此的導通狀態，另一方面保持鄰接的電極彼此的絕緣狀態的方式兼顧電性連接與機械性固著的連接材料。此種接著帶亦用於液晶面板、電漿顯示面板（Plasma Display Panel，PDP）、電致發光（Electroluminescence，EL）面板、裸晶片封裝體等電子零件與電路基板的接著或者電路基板彼此的接著等。
在使用接著帶的一般性構件連接方法中，在將接著層3貼附於被連接構件111的貼附步驟中，首先如圖6（a）所示，對接著帶101的前端側的接著層103進行半切割（half cut）。此處，以在接著帶101的離型件（separator）102留有刀痕的程度將刀B切入至接著層103。其次，如圖6（b）所示，自離型件102側將加熱工具116壓抵至較進行了半切割的位置靠前端側的接著層103。藉此，如圖7（a）所示，較進行了半切割的位置靠前端側的接著層1033自離型件102剝離，從而如圖7（b）所示，將接著層103貼附於被連接構件111。
[現有技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2001-284005號公報
[發明所欲解決之課題]
在所述先前的方法中，由於在貼附步驟中進行了對接著帶的半切割，因此存在被配置於被連接構件的接著層的形狀的自由度欠缺的問題。而且，亦存在貼附時需要接著層相對於被連接構件的對準精度的問題。
本揭示是為了解決所述課題而成，目的在於提供一種可降低對接著層相對於被連接構件的對準精度的需求且可對被連接構件以任意的形狀配置接著層的構件連接方法、及應用於所述方法的接著帶。
[解決課題之手段]
本揭示的一方面的構件連接方法，其為使用在離型件的一面側設有接著層的接著帶來對被連接構件彼此進行連接的構件連接方法，包括：切斷步驟，針對接著層，至少沿接著帶的寬度方向以規定的間隔形成切斷線，使藉由切斷線劃分出的接著層的區段（segment）至少在接著帶的長度方向上連續；轉印步驟，接著層的區段以與一被連接構件的連接面相向的方式進行配置，將具有任意的圖案形狀的加熱加壓工具自離型件側壓抵至接著帶，將與加熱加壓工具的壓抵部分對應的接著層的區段選擇性地轉印至一被連接構件；以及連接步驟，經由被轉印至一被連接構件的接著層的區段而對一被連接構件連接另一被連接構件。
在所述構件連接方法中，藉由在切斷步驟中形成於接著層的切斷線，使接著層的區段預先在接著帶的長度方向上連續。然後，在轉印步驟中，使用加熱加壓工具將接著層的區段選擇性地轉印至一被連接構件。轉印步驟中轉印的接著層的區段的圖案形狀可藉由加熱加壓工具的圖案形狀來任意地調整。因此，可對被連接構件以任意的形狀來配置接著層。而且，在所述構件連接方法中，由於接著層的區段預先在接著帶的長度方向上連續，因此在轉印步驟中亦不需要一被連接構件與接著層的嚴格的對準。
而且，亦可為：在切斷步驟中，針對接著層，沿接著帶的寬度方向及長度方向以規定的間隔形成切斷線，使藉由切斷線劃分出的接著層的區段在接著帶的寬度方向及長度方向上連續。在此情況下，由於接著層的區段是二維地形成，因此可提高接著層相對於被連接構件的配置自由度。
而且，亦可為：在切斷步驟中，將接著帶自原材料捲中抽出，對接著層形成切斷線，之後，對接著帶進行捲繞而形成捲繞體。在此情況下，切斷步驟與轉印步驟是分離的，所以可避免進行轉印步驟的現場中裝置的大型化·複雜化。
而且，亦可為：接著層設置於離型件的一面側的整個面。在此情況下，可進一步降低轉印步驟中對一被連接構件與接著層之間的對準精度的需求。
而且，本發明的一方面的接著帶，其為在離型件的一面側設有接著層的接著帶，其中，針對接著層，至少沿接著帶的寬度方向以規定的間隔形成有切斷線，藉由切斷線劃分出的接著層的區段至少在接著帶的長度方向上是連續的。
在所述接著帶中，藉由形成於接著層的切斷線，接著層的區段在接著帶的長度方向上是連續的。在所述接著帶中，可使用加熱加壓工具將接著層的區段選擇性地轉印至一被連接構件。被轉印至一被連接構件的接著層的區段的圖案形狀可藉由加熱加壓工具的圖案形狀來任意地調整。因此，可對被連接構件以任意的形狀來配置接著層。而且，在所述接著帶中，由於接著層的區段預先在接著帶的長度方向上連續，因此在轉印時亦不需要一被連接構件與接著層的嚴格的對準。
[發明的效果]
根據本揭示，可降低對接著層相對於被連接構件的對準精度的需要，且可對被連接構件以任意的形狀配置接著層。
以下，參照圖式，對本揭示的一方面的構件連接方法及接著帶的較佳的實施方式進行詳細的說明。
[接著帶的構成]
圖1是表示接著帶的一實施方式的示意性的剖面圖。而且，圖2是表示圖1所示的接著帶的接著層的示意性的平面圖。如所述圖所示，接著帶1具有藉由離型件2及形成於離型件2的一面2a側的整個面的接著層3而構成的雙層結構。接著帶1例如是被用於對具有多個電極的被連接構件11A、被連接構件11B（參照圖5）彼此進行連接的各向異性導電性帶。
接著帶1的長度例如為10 m以上且1000 m以下。在本實施方式中，例如為300 m，以捲繞體的狀態得到保存及搬運。接著帶1的寬度例如為0.5 mm以上且25.0 mm以下，較佳為0.5 mm以上且3.0 mm以下，進而佳為0.5 mm以上且2.0 mm以下。接著帶1的厚度例如為5 μm以上且250 μm以下，較佳為10 μm以上且40 μm以下，進而佳為10 μm以上且20 μm以下。
作為離型件2的材料，就接著帶1的強度及接著層3的剝離性的觀點而言，例如可使用延伸聚丙烯（Oriented Polypropylene，OPP）、聚對苯二甲酸乙二酯（Polyethylene Terephthalate，PET）、聚萘二甲酸乙二酯、聚間苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚烯烴、聚乙酸酯、聚碳酸酯、聚苯硫醚、聚醯胺、乙烯·乙酸乙烯酯共聚物、聚氯乙烯、聚偏二氯乙烯、合成橡膠系、液晶聚合物等。
亦可在離型件2的另一面2b側實施脫模處理。作為進行脫模處理的脫模劑，例如可使用烯烴系脫模劑、乙二醇褐煤酸酯、巴西棕櫚蠟、石油系蠟等低熔點蠟、低分子量氟樹脂、矽酮系或氟系的界面活性劑、石油（oil）、蠟（wax）、樹脂（resin）、聚酯改質矽酮樹脂等矽酮樹脂等。作為脫模劑，一般而言是使用矽酮樹脂。
作為接著層3的材料，例如可使用包含熱塑性樹脂、熱硬化性樹脂、或者熱塑性樹脂與熱硬化性樹脂的混合系（混合樹脂）等樹脂的接著劑。作為代表性的熱塑性樹脂，例如可列舉：苯乙烯樹脂系、聚酯樹脂系。作為代表性的熱硬化性樹脂，例如可列舉環氧樹脂系、丙烯酸樹脂系、矽酮樹脂系。
在接著帶1為各向異性導電性帶的情況下，接著層3可包含接著劑成分以及根據需要而含有的導電粒子。作為接著劑成分，例如可廣泛應用藉由熱或光而呈現硬化性的材料，就連接後的耐熱性或耐濕性優異的方面而言，較佳為使用交聯性材料。含有作為熱硬化性樹脂的環氧樹脂作為主成分的環氧系接著劑能夠短時間硬化而連接作業性良好，分子結構上接著性優異。作為環氧系接著劑，例如可使用以高分子量環氧、固體環氧或液狀環氧、或者利用胺基甲酸酯、聚酯、丙烯酸系橡膠、丁腈橡膠（Nitrile Rubber，NBR）、合成線狀聚醯胺等將該些改質而成的環氧為主成分者。環氧系接著劑一般為對構成主成分的所述環氧添加硬化劑、觸媒、偶合劑、填充劑等而成者。
作為導電粒子，例如可列舉金（Au）、銀（Ag）、鉑（Pt）、鎳（Ni）、銅（Cu）、鎢（W）、銻（Sb）、錫（Sn）、焊料等金屬或者碳的粒子。而且亦可使用以非導電性的玻璃、陶瓷（ceramic）、塑膠（plastic）等為核，且利用所述金屬或碳包覆所述核而成的包覆粒子。就分散性、導電性的觀點而言，導電粒子的平均粒徑例如較佳為1 μm以上且18 μm以下。亦可使用利用絕緣層包覆導電粒子而成的絕緣包覆粒子，就提高鄰接的電極彼此的絕緣性的觀點而言，亦可併用導電粒子與絕緣性粒子。
於接著層3，如圖2所示，沿接著帶1的寬度方向及長度方向，以規定的間隔形成有切斷線C。切斷線C以自接著層3側起到達離型件2的一面2a的方式形成（參照圖1）。於接著層3，成為藉由該些切斷線C劃分出的區段4在接著帶1的寬度方向及長度方向上連續的狀態。在本實施方式中，沿接著帶1的寬度方向及長度方向分別以0.5 mm間隔形成有直線狀的切斷線C。藉此，於接著層3，一邊為0.5 mm的大致正方形狀的區段4遍及離型件2的一面2a的整個面呈矩陣狀地排列。
[構件連接方法]
其次，對使用所述接著帶1的構件連接方法進行說明。
應用所述構件連接方法的被連接構件11A、被連接構件11B並無特別限制，可應用於任意的電子零件用的構件。此處，例示對具有多個電極的被連接構件11A、被連接構件11B彼此的連接。所述構件連接方法包括：對接著帶1的接著層3形成切斷線C的切斷步驟、將接著層3轉印至一被連接構件11A的轉印步驟以及經由所轉印的接著層3而將被連接構件11A、被連接構件11B予以連接的連接步驟。
在切斷步驟中，例如如圖3所示，使用：以固定速度對接著帶1進行搬運的搬運裝置12、以及對藉由搬運裝置12搬運的接著帶1形成切斷線的切斷裝置13。搬運裝置12包括：自原材料捲14中抽出接著帶1的抽出輥12A、以及捲繞自原材料捲14中抽出的接著帶1的捲繞輥12B。而且，切斷裝置13具有：沿接著帶1的寬度方向以規定的間隔對接著層3形成切斷線C的第一切斷裝置13A、以及沿接著帶1的長度方向以規定的間隔對接著層3形成切斷線C的第二切斷裝置13B。第一切斷裝置13A及第二切斷裝置13B中哪一個配置於搬運方向的上游側均可。
抽出輥12A自原材料捲14中抽出的接著帶1在朝向捲繞輥12B被搬運的過程中通過第一切斷裝置13A及第二切斷裝置13B。藉此，針對接著層3，沿接著帶1的寬度方向及長度方向以規定的間隔形成切斷線C，成為藉由切斷線C劃分出的接著層3的區段4在接著帶1的寬度方向及長度方向上連續的狀態（參照圖2）。形成切斷線C後，接著帶1被捲繞輥12B捲繞，成為捲繞體15。接著帶1以捲繞體15的狀態得到保存，並被搬運至轉印步驟的實施現場。
另外，亦可在第一切斷裝置13A及第二切斷裝置13B的後段側配置切割加工裝置，並利用多個捲繞輥12B分別對藉由切割加工裝置加工成窄寬度的多條接著帶1進行捲繞。
在轉印步驟中，例如如圖4（a）、圖4（b）所示，接著層3的區段4以與一被連接構件11A的連接面11a相向的方式將接著帶1配置於一被連接構件11A。接著帶1既可自捲繞體15抽取來使用，亦可將自捲繞體15抽取的部分切斷來使用。而且，在轉印步驟中，使用加熱加壓工具16。加熱加壓工具16例如是藉由不銹鋼、陶瓷等而形成，在加熱加壓面16a側具有任意的圖案形狀。
在轉印步驟中，如圖4（a）所示，自離型件2側將加熱加壓工具16的加熱加壓面16a壓抵至接著帶1，使接著層3密接於一被連接構件11A的連接面11a。藉此，如圖4（b）所示，僅將與加熱加壓工具16的壓抵部分對應的接著層3的區段4選擇性地轉印至一被連接構件11A的連接面11a。加熱加壓工具16產生的壓力例如為0.5 MPa～5 MPa左右，加熱加壓工具16產生的溫度為25℃～90℃左右。
在連接步驟中，例如如圖5所示，對選擇性地轉印有接著層3的區段4的一被連接構件11A連接另一被連接構件11B。藉此，獲得經由接著層3的區段4而對一被連接構件11A連接有另一被連接構件11B的連接結構體17。
[作用效果]
如以上所說明般，在所述構件連接方法中，藉由在切斷步驟中形成於接著層3的切斷線C，使接著層3的區段4預先在接著帶1的長度方向上連續。然後，在轉印步驟中，使用加熱加壓工具16將接著層3的區段4選擇性地轉印至一被連接構件11A。轉印步驟中轉印的接著層3的區段4的圖案形狀可藉由加熱加壓工具16的圖案形狀來任意地調整。因此，可對一被連接構件11A以任意的形狀來配置接著層3。而且，在所述構件連接方法中，由於接著層3的區段4預先在接著帶1的長度方向上連續，因此與在貼附步驟中實施接著層的半切割的方法（參照圖6（a）、圖6（b）及圖7（a）、圖7（b））相比，在轉印步驟中亦不需要一被連接構件11A與接著層3的嚴格的對準。
而且，在本實施方式中，在切斷步驟中，針對接著層3，沿接著帶1的寬度方向及長度方向以規定的間隔形成切斷線C，使藉由切斷線C劃分出的接著層3的區段4在接著帶1的寬度方向及長度方向上連續。藉此，由於接著層3的區段4是二維地形成，因此可提高接著層3相對於一被連接構件11A的配置自由度。
而且，在本實施方式中，在切斷步驟中，將接著帶1自原材料捲14中抽出，對接著層3形成切斷線C，之後，對接著帶1進行捲繞而形成捲繞體15。在此情況下，切斷步驟與轉印步驟是分離的，所以可避免進行轉印步驟的現場中裝置的大型化·複雜化。
而且，在本實施方式中，接著層3設置於離型件2的一面2a側的整個面。藉此，可進一步降低轉印步驟中對一被連接構件11A與接著層3之間的對準精度的需求。
[變形例]
本發明並不限於所述實施方式。例如在所述實施方式中，是沿接著帶1的寬度方向及長度方向以規定的間隔對接著層3形成切斷線C，但亦可僅在接著帶1的寬度方向上形成切斷線C。而且，在所述實施方式中，例示了直線狀的切斷線C，但切斷線C並不限於直線狀，亦可為曲線狀、蛇形線狀、鋸齒狀等其他形態。切斷線C的間隔亦不限於固定，例如亦可具有週期性地進行變化。切斷線C的間隔亦可在接著帶1的寬度方向與長度方向之間彼此不同。而且，例如在所述實施方式中，接著層3的區段4的形狀為正方形狀，但亦可為長方形、菱形、三角形、多邊形、圓形、橢圓形等其他形狀。
1、101‧‧‧接著帶
2、102‧‧‧離型件
2a‧‧‧一面
2b‧‧‧另一面
3、103‧‧‧接著層
4‧‧‧區段
11A、11B、111‧‧‧被連接構件
11a‧‧‧連接面
12‧‧‧搬運裝置
12A‧‧‧抽出輥
12B‧‧‧捲繞輥
13‧‧‧切斷裝置
13A‧‧‧第一切斷裝置
13B‧‧‧第二切斷裝置
14‧‧‧原材料捲
15‧‧‧捲繞體
16‧‧‧加熱加壓工具
16a‧‧‧加熱加壓面
17‧‧‧連接結構體
116‧‧‧加熱工具
B‧‧‧刀
C‧‧‧切斷線
圖1是表示接著帶的一實施方式的示意性的剖面圖。
圖2是表示圖1所示的接著帶的接著層的示意性的平面圖。
圖3是表示切斷步驟的一例的示意圖。
圖4（a）、圖4（b）是表示轉印步驟的一例的示意性的剖面圖。
圖5是表示連接步驟的一例的示意性的剖面圖。
圖6（a）、圖6（b）是表示使用接著帶的一般性構件連接方法的示意性的剖面圖。
圖7（a）、圖7（b）是表示圖6的後續步驟的示意性的剖面圖。

Claims (5)

  1. 一種構件連接方法，其為使用在離型件的一面側設有接著層的接著帶來對被連接構件彼此進行連接的構件連接方法，包括： 切斷步驟，針對所述接著層，至少沿所述接著帶的寬度方向以規定的間隔形成切斷線，使藉由所述切斷線劃分出的所述接著層的區段至少在所述接著帶的長度方向上連續； 轉印步驟，所述接著層的區段以與一個被連接構件的連接面相向的方式進行配置，將具有任意的圖案形狀的加熱加壓工具自所述離型件側壓抵至所述接著帶，將與所述加熱加壓工具的壓抵部分對應的所述接著層的區段選擇性地轉印至所述一個被連接構件；以及 連接步驟，經由被轉印至所述一個被連接構件的所述接著層的區段而對所述一個被連接構件連接另一個被連接構件。
  2. 如申請專利範圍第1項所述的構件連接方法，其中，在所述切斷步驟中，針對所述接著層，沿所述接著帶的寬度方向及長度方向以規定的間隔形成所述切斷線，使藉由所述切斷線劃分出的所述接著層的區段在所述接著帶的寬度方向及長度方向上連續。
  3. 如申請專利範圍第1項或第2項所述的構件連接方法，其中，在所述切斷步驟中，將所述接著帶自原材料捲中抽出，對所述接著層形成所述切斷線，之後，對所述接著帶進行捲繞而形成捲繞體。
  4. 如申請專利範圍第1項至第3項中任一項所述的構件連接方法，其中，所述接著層設置於所述離型件的一面側的整個面。
  5. 一種接著帶，其為在離型件的一面側設有接著層的接著帶，其中， 針對所述接著層，至少沿所述接著帶的寬度方向以規定的間隔形成有切斷線，藉由所述切斷線劃分出的所述接著層的區段至少在所述接著帶的長度方向上是連續的。
TW108103867A 2018-02-01 2019-01-31 構件連接方法 TWI826418B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018016341 2018-02-01
JP2018-016341 2018-02-01

Publications (2)

Publication Number Publication Date
TW201938003A true TW201938003A (zh) 2019-09-16
TWI826418B TWI826418B (zh) 2023-12-21

Family

ID=67478855

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108103867A TWI826418B (zh) 2018-02-01 2019-01-31 構件連接方法

Country Status (6)

Country Link
US (1) US11342303B2 (zh)
JP (1) JP7173055B2 (zh)
KR (1) KR102678136B1 (zh)
CN (1) CN111655810B (zh)
TW (1) TWI826418B (zh)
WO (1) WO2019151434A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202335556A (zh) * 2022-01-20 2023-09-01 美商阿爾發金屬化工公司 使用層壓模組化預製件接合電組件及機械組件之方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5665948U (zh) * 1979-10-22 1981-06-02
DE4307889C2 (de) * 1993-03-12 1997-04-10 Axel Donat Verfahren zum automatischen Entgittern und Übertragen computergeschnittener Selbstklebefolien und Folie zur Durchführung des Verfahrens
JPH0820178A (ja) * 1994-07-08 1996-01-23 Lintec Corp 薄膜シート片の転写方法及び転写シート
JPH09111196A (ja) * 1995-10-16 1997-04-28 Nitto Denko Corp 両面粘着材
JPH09137136A (ja) * 1995-11-14 1997-05-27 Nitto Denko Corp 両面接着テープ及びその加工方法
JPH10140096A (ja) 1996-11-08 1998-05-26 Lintec Corp 転写マーキング用シート
JP4465788B2 (ja) 2000-03-28 2010-05-19 日立化成工業株式会社 異方導電材テープ及びリール
US20130115408A1 (en) * 2000-07-24 2013-05-09 High Voltage Graphics, Inc. Processes for precutting laminated flocked articles
JP3994809B2 (ja) * 2002-07-09 2007-10-24 株式会社日立ハイテクノロジーズ 電子回路部品の打ち抜き装置及びその供給リール交換方法
JP2004042943A (ja) * 2002-07-10 2004-02-12 Seed:Kk マーク転写具およびマーク転写テープ
JP2009260272A (ja) * 2008-03-25 2009-11-05 Panasonic Corp 基板の加工方法および半導体チップの製造方法ならびに樹脂接着層付き半導体チップの製造方法
JP5537789B2 (ja) * 2008-10-01 2014-07-02 日東電工株式会社 レーザー加工用粘着シート及びレーザー加工方法
JP2010129700A (ja) * 2008-11-26 2010-06-10 Nitto Denko Corp ダイシング・ダイボンドフィルム及び半導体装置の製造方法
US8829360B2 (en) * 2010-11-26 2014-09-09 Schlenk Metallfolien Gmbh & Co. Kg Connector for PV cells and method for its production
KR101456826B1 (ko) * 2012-07-03 2014-10-31 도레이 카부시키가이샤 개편화된 접착제층을 갖는 접착제 시트의 제조 방법, 접착제 시트를 사용한 배선 기판의 제조 방법, 반도체 장치의 제조 방법 및 접착제 시트의 제조 장치
JP5681749B2 (ja) * 2013-05-02 2015-03-11 株式会社東芝 歪みセンサ、圧力センサ、血圧センサ及び構造物ヘルスモニタセンサ
JP2015013967A (ja) * 2013-07-05 2015-01-22 デクセリアルズ株式会社 接着フィルムの転着方法、接続構造体の製造方法
JP5665948B1 (ja) * 2013-11-14 2015-02-04 株式会社フジクラ 携帯型電子機器の冷却構造
JP2016003314A (ja) * 2014-06-19 2016-01-12 株式会社村田製作所 部品用粘着部材配設シート
JP6365377B2 (ja) * 2015-03-31 2018-08-01 ブラザー工業株式会社 テープカセット

Also Published As

Publication number Publication date
JP7173055B2 (ja) 2022-11-16
KR20200112927A (ko) 2020-10-05
TWI826418B (zh) 2023-12-21
KR102678136B1 (ko) 2024-06-26
JPWO2019151434A1 (ja) 2021-01-28
CN111655810B (zh) 2022-05-27
US20210074674A1 (en) 2021-03-11
CN111655810A (zh) 2020-09-11
WO2019151434A1 (ja) 2019-08-08
US11342303B2 (en) 2022-05-24

Similar Documents

Publication Publication Date Title
JP7306594B1 (ja) 導電性フィルム、巻回体、接続構造体、及び接続構造体の製造方法
KR101959576B1 (ko) 금속박 패턴 적층체, 금속박의 펀칭 방법, 회로 기판, 그 제조 방법 및 태양 전지 모듈
TW200305235A (en) Releasing layer transfer film and laminate film
TWI535340B (zh) 遮罩膜、遮罩印刷佈線板及遮罩印刷佈線板的製造方法
EP2017315A1 (en) Adhesive tape
KR20110126189A (ko) 이방 도전 접속용 필름의 사용 방법
JP2022095802A (ja) プラスチック基板接続用電子部品、接続体、接続体の製造方法、及び電子部品の接続方法
CN112204828B (zh) 连接体的制造方法、连接方法
US11839030B2 (en) Flexible printed circuit board, COF module, and electronic device comprising the same
TW201938003A (zh) 構件連接方法及接著帶
TW200306633A (en) Film carrier tape for mounting electronic devices thereon and method of manufacturing the same
KR101808347B1 (ko) 필름 적층체, 필름 적층체의 부착 방법, 필름 적층체를 이용한 접속 방법 및 접속 구조체
JP2014007315A (ja) 半導体パッケージの製造方法
JP6562750B2 (ja) 電子部品、接続体、接続体の製造方法、電子部品の接続方法、緩衝材
CN101003191A (zh) 复合片材
JP5720748B2 (ja) 半導体チップの製造方法
JP2011077125A (ja) 配線板、配線板の製造方法、配線板の接続構造及び配線板の接続方法
JP2011187641A (ja) フレキシブル基板の製造方法
JP6469728B2 (ja) 電子デバイスの製造方法および電子デバイス
JP2018073684A (ja) 接続体の製造方法、接続方法、接続装置
JP3604348B2 (ja) 電子部品実装用基板の反り低減方法
JPH11322186A (ja) テープ剥ぎ取り装置
JP6689135B2 (ja) 接着テープ構造体
JP2024097756A (ja) フィルム構造体、フィルム構造体の製造方法、及び接続構造体の製造方法
JP2014146639A (ja) 接着剤層付き配線基板の製造方法