TW201934767A - Copper foil for flexible printed substrate, copper clad laminate using the same, flexible printed substrate and electronic machine having an aggregation degree represented by the X-ray diffraction intensity of 1.3 or more and less than 7.0 - Google Patents

Copper foil for flexible printed substrate, copper clad laminate using the same, flexible printed substrate and electronic machine having an aggregation degree represented by the X-ray diffraction intensity of 1.3 or more and less than 7.0 Download PDF

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TW201934767A
TW201934767A TW107147630A TW107147630A TW201934767A TW 201934767 A TW201934767 A TW 201934767A TW 107147630 A TW107147630 A TW 107147630A TW 107147630 A TW107147630 A TW 107147630A TW 201934767 A TW201934767 A TW 201934767A
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copper foil
flexible printed
copper
printed circuit
circuit board
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TWI730280B (en
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石野裕士
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日商Jx金屬股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/01Alloys based on copper with aluminium as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/02Alloys based on copper with tin as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/04Alloys based on copper with zinc as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/10Alloys based on copper with silicon as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

This invention provides a copper foil for a flexible printed substrate with excellent etching property, a copper clad laminate using the same, a flexible printed substrate and an electronic machine. The copper foil for a flexible printed substrate of this invention is composed of 99.0% by mass or more of Cu and residual containing unavoidable impurities, with an average crystal grain diameter of 0.5 to 4.0 [mu]m, and an aggregation degree represented by the X-ray diffraction intensity I(220)/I0(220) on the surface of the copper foil is 1.3 or more and less than 7.0, and the electrical conductivity is 80% or more.

Description

可撓性印刷基板用銅箔、使用其之覆銅積層體、可撓性印刷基板及電子機器 Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic device

本發明係關於一種可較佳地用於可撓性印刷基板等配線構件之銅箔、使用其之覆銅積層體、可撓性配線板及電子機器。 The present invention relates to a copper foil that can be preferably used for wiring members such as flexible printed boards, a copper-clad laminate, a flexible wiring board, and an electronic device.

可撓性印刷基板(可撓性配線板,以下稱為「FPC」)由於具有可撓性,故被廣泛用於電子電路之彎折部或可動部。例如,將FPC用於HDD或DVD及CD-ROM等碟片相關機器之可動部、摺疊式行動電話機之彎折部等。 Flexible printed circuit boards (flexible wiring boards, hereinafter referred to as "FPCs") are widely used in bent or movable parts of electronic circuits because of their flexibility. For example, FPC is used for the movable part of HDD or DVD- and CD-ROM-related equipment, and the folding part of a folding mobile phone.

FPC係藉由將積層銅箔與樹脂而成之Copper Clad Laminate(覆銅積層體,以下稱為CCL)蝕刻而形成配線,且其上經被稱為覆蓋層(cover lay)之樹脂層被覆而成者。於積層覆蓋層之前階段中,作為用以提高銅箔與覆蓋層之密接性之表面改質步驟之一環,進行銅箔表面之蝕刻。又,亦存在為了減少銅箔之厚度提高彎曲性,而進行減厚蝕刻之情形。 FPC is formed by etching Copper Clad Laminate (copper-clad laminate, hereinafter referred to as CCL) formed by laminating copper foil and resin, and is covered with a resin layer called a cover lay. Successor. In the stage before the overlaying layer, as a part of the surface modification step for improving the adhesion between the copper foil and the overlaying layer, the surface of the copper foil is etched. In addition, in order to reduce the thickness of the copper foil and improve the bendability, there may be a case where the thickness is etched.

再者,隨著電子機器之小型、薄型、高性能化,要求FPC之電路寬度、間隔寬度之微細化(例如,20~30μm左右)。若FPC之電路微細化,則存在以下問題,即,於藉由蝕刻形成電路時,蝕刻因子(etching factor)或電路直線性容易劣化(專利文獻1,2)。 Furthermore, with the miniaturization, thinness, and high performance of electronic devices, miniaturization of the circuit width and interval width of FPC is required (for example, about 20 to 30 μm). If the circuit of the FPC is miniaturized, there is a problem that when a circuit is formed by etching, an etching factor or circuit linearity is liable to deteriorate (Patent Documents 1 and 2).

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2017-141501號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2017-141501

[專利文獻2]日本特開2017-179390號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2017-179390

然而,於習知之技術中,作為改善蝕刻性之方案,進行了平均結晶粒徑等之最佳化,但微細電路之形成中之蝕刻性仍有改善之餘地。 However, in the conventional technology, optimization of the average crystal grain size and the like has been performed as a solution for improving the etching properties, but there is still room for improvement in the etching properties in the formation of fine circuits.

本發明係為了解決上述課題而成者,其目的在於提供一種蝕刻性優異之可撓性印刷基板用銅箔、使用其之覆銅積層體、可撓性印刷基板及電子機器。 The present invention has been made in order to solve the above-mentioned problems, and an object thereof is to provide a copper foil for a flexible printed circuit board having excellent etching properties, a copper-clad laminated body using the same, a flexible printed circuit board, and an electronic device.

本發明者等人進行了各種研究,其結果發現〈220〉方位之蝕刻速度較大。尤其於利用氯化銅蝕刻劑之蝕刻中,不存在由方位所致之蝕刻速度之差。因此,藉由增多〈220〉方位之晶粒,而成功地進一步提高了蝕刻性(特別是軟蝕刻性及蝕刻因子)。 The present inventors have conducted various studies, and as a result, found that the etching rate in the <220> orientation is large. Especially in the etching using a copper chloride etchant, there is no difference in the etching speed due to orientation. Therefore, by increasing the number of grains in the <220> orientation, the etchability (especially soft etchability and etch factor) has been further improved.

即,本發明之可撓性印刷基板用銅箔係由99.0質量%以上之Cu、及剩餘部分之不可避免之雜質所構成之壓延銅箔,且平均結晶粒徑為0.5~4.0μm,銅箔表面之由X射線繞射強度I(220)/I0(220)所表示之集合度為1.3以上且未達7.0,導電率為80%以上。 That is, the copper foil for a flexible printed circuit board of the present invention is a rolled copper foil composed of 99.0% by mass or more of Cu and unavoidable impurities in the remainder, and has an average crystal grain size of 0.5 to 4.0 μm. The degree of aggregation represented by the X-ray diffraction intensity I (220) / I 0 (220) on the surface is 1.3 or more and less than 7.0, and the conductivity is 80% or more.

本發明之可撓性印刷基板用銅箔較佳為由JIS-H3100(C1100)標準之精銅或JIS-H3100(C1020)之無氧銅所構成。 The copper foil for a flexible printed circuit board of the present invention is preferably composed of refined copper of JIS-H3100 (C1100) standard or oxygen-free copper of JIS-H3100 (C1020).

本發明之可撓性印刷基板用銅箔較佳為進而含有合計為0.7質量%以下之選自由P、Ag、Si、Ge、Al、Ga、Zn、Sn及Sb所組成之群中之至少1種或2種以上作為添加元素而成。 The copper foil for a flexible printed circuit board of the present invention preferably further contains at least 1 selected from the group consisting of P, Ag, Si, Ge, Al, Ga, Zn, Sn, and Sb in a total amount of 0.7% by mass or less. One or two or more kinds are added as an additive element.

於本發明之可撓性印刷基板用銅箔中,較佳為於300℃×30min退火(其中,升溫速度為100℃/min~300℃/min)後,上述平均結晶粒徑為0.5~4.0μm,上述集合度為1.3以上且未達7.0,上述導電率為80%以上。 In the copper foil for a flexible printed circuit board of the present invention, it is preferable that after annealing at 300 ° C for 30 minutes (wherein, the heating rate is 100 ° C / min to 300 ° C / min), the average crystal grain size is 0.5 to 4.0. μm, the agglomeration degree is 1.3 or more and less than 7.0, and the electrical conductivity is 80% or more.

本發明之覆銅積層體係積層上述可撓性印刷基板用銅箔與樹脂層而成。 The copper-clad laminated system of the present invention is formed by laminating the copper foil for a flexible printed circuit board and a resin layer.

本發明之可撓性印刷基板係於上述覆銅積層體中之上述銅箔上形成電路而成。 The flexible printed circuit board of the present invention is formed by forming a circuit on the copper foil in the copper-clad laminate.

本發明之電子機器係使用上述可撓性印刷基板而成。 The electronic device of the present invention is formed using the flexible printed circuit board.

根據本發明,可獲得蝕刻性(特別是軟蝕刻性及蝕刻因子)優異之可撓性印刷基板用銅箔。 According to the present invention, a copper foil for a flexible printed circuit board having excellent etching properties (especially soft etching properties and etching factors) can be obtained.

圖1係表示蝕刻因子EF之測定方法之圖。 FIG. 1 is a diagram showing a method for measuring the etching factor EF.

圖2係表示蝕刻因子EF之測定方法之另一圖。 FIG. 2 is another diagram showing a method for measuring the etching factor EF.

以下,就本發明之銅箔之實施形態加以說明。再者,於本發明中,%除非特別說明,否則表示質量%。 Hereinafter, embodiments of the copper foil of the present invention will be described. In addition, in this invention, unless otherwise stated,% means mass%.

首先,就蝕刻性中之軟蝕刻性及蝕刻因子EE加以說明。 First, the soft etchability and the etch factor EE in the etchability will be described.

軟蝕刻性係表示由銅箔表面與抗蝕劑之密接性所引起之利用蝕刻而得之電路之精度之指標,抗蝕劑之密接性越佳而抗蝕劑越追隨銅箔表面,則越抑制蝕刻液侵入兩者間而電路之一部分缺少之缺陷,於銅箔整個面可獲得均勻之電路 圖案,良率提高。 Soft etchability is an indicator of the accuracy of the circuit obtained by etching due to the adhesion between the surface of the copper foil and the resist. The better the adhesion of the resist and the more the resist follows the surface of the copper foil, the more Suppresses the defect that the etchant enters between the two parts and the circuit is missing, and obtains a uniform circuit on the entire surface of the copper foil Pattern, yield is improved.

蝕刻因子EF係藉由蝕刻所形成之電路之剖面形狀之指標,EF越高,則藉由蝕刻所形成之電路之剖面變得越陡峭,因此,於使電路微細化時,電路圖案之精度提高。 The etching factor EF is an index of the cross-sectional shape of a circuit formed by etching. The higher the EF, the steeper the cross-section of a circuit formed by etching. Therefore, when the circuit is miniaturized, the accuracy of the circuit pattern is improved. .

於即便軟蝕刻性良好,但蝕刻因子EF較差之情形時,雖於銅箔整個面可獲得均勻之電路圖案而良率提高,但於使電路微細化時,電路圖案之精度降低。 Even if the soft etching property is good, but the etching factor EF is poor, a uniform circuit pattern can be obtained on the entire surface of the copper foil and the yield is improved. However, when the circuit is miniaturized, the accuracy of the circuit pattern is reduced.

相反地,於即便蝕刻因子EF良好,但軟蝕刻性較差之情形時,雖於使電路微細化時,電路圖案之精度提高,但(由於蝕刻液易侵入銅箔表面與抗蝕劑之間)而產生電路之一部分缺少之缺陷,於銅箔整個面無法獲得均勻之電路圖案而良率降低。 Conversely, when the soft etching property is poor even though the etching factor EF is good, the circuit pattern accuracy is improved when the circuit is miniaturized, but (as the etching solution easily penetrates between the surface of the copper foil and the resist) As a result, a part of the circuit is lacking, and a uniform circuit pattern cannot be obtained on the entire surface of the copper foil, and the yield is reduced.

<組成> <Composition>

本發明之銅箔係由99.0質量%以上之Cu、及剩餘部分之不可避免之雜質所構成。 The copper foil of the present invention is composed of 99.0% by mass or more of Cu and inevitable impurities in the remaining portion.

於本發明之實施例中,藉由使銅箔之最終冷軋前之結晶粒徑微細化,冷軋中銅箔之差排之累積得到促進,於再結晶時再結晶晶粒變得微細。又,若於冷軋之最終道次中極端地提高應變速度,則於再結晶時再結晶晶粒配向於特定之方位,即{200}面集合度受到抑制,且可提高{220}面集合度,蝕刻性提高。 In the embodiment of the present invention, by minimizing the crystal grain size before the final cold rolling of the copper foil, the accumulation of the differential rows of the copper foil during the cold rolling is promoted, and the recrystallized grains become fine during recrystallization. In addition, if the strain rate is extremely increased in the final pass of cold rolling, the recrystallized grains are aligned to a specific orientation during recrystallization, that is, the degree of {200} plane set is suppressed, and the {220} plane set can be increased Degree and improved etchability.

又,為了使銅箔之再結晶後之晶粒微細化,較佳為於反覆進行退火與壓延之整個步驟之中,將於最終退火後進行之最終冷軋前之結晶粒徑設為5μm以上且20μm以下。 In addition, in order to refine the grains of the copper foil after recrystallization, it is preferable that the crystal grain size before the final cold rolling performed after the final annealing is set to 5 μm or more in the entire steps of annealing and rolling repeatedly. It is 20 μm or less.

具體而言,若調整最終退火之溫度、及最終退火前之冷軋之加工度,則可控制上述粒徑。最終退火之溫度雖根據銅箔之製造條件而變化,但並無限定,例如只要設為300~400℃即可。又,最終退火前之冷軋之加工度亦無限定,例 如只要將加工度η設為1.6~3.0即可。 Specifically, the above-mentioned particle size can be controlled by adjusting the temperature of the final annealing and the workability of the cold rolling before the final annealing. Although the temperature of the final annealing varies depending on the manufacturing conditions of the copper foil, it is not limited, and may be set to, for example, 300 to 400 ° C. In addition, the workability of cold rolling before final annealing is also not limited. For example, the processing degree η may be set to 1.6 to 3.0.

加工度η係將即將進行最終退火前之冷軋之材料之厚度設為A0,將剛進行完最終退火前之冷軋之材料之厚度設為A1,而由η=ln(A0/A1)所表示。 The processing degree η is the thickness of the cold-rolled material immediately before the final annealing is set to A0, the thickness of the cold-rolled material immediately before the final annealing is set to A1, and η = ln (A0 / A1) Means.

於最終冷軋前之結晶粒徑超過20μm之情形時,加工時之差排之相互交截變小,應變之累積變少,因此有於再結晶後應變未釋放而晶粒之微細化變得不充分之傾向。於最終冷軋前之結晶粒徑小於5μm之情形時,加工時之差排之相互交截於銅箔之大致整個區域發生,無法發生更多之相互交截,於銅箔之再結晶時再結晶晶粒微細化之效果飽和。因此,將最終冷軋前之結晶粒徑之下限設為5μm。 When the crystal grain size before the final cold rolling exceeds 20 μm, the cross-intersection of the differential rows during processing becomes smaller, and the accumulation of strain becomes smaller. Therefore, after the recrystallization, the strain is not released and the grain size becomes finer. Inadequate tendency. In the case where the crystal grain size before the final cold rolling is less than 5 μm, the cross-intersection of the differential rows during processing occurs in approximately the entire area of the copper foil, and no more cross-intersection can occur. The effect of miniaturizing crystal grains is saturated. Therefore, the lower limit of the crystal grain size before the final cold rolling is set to 5 μm.

又,若相對於上述組成而含有合計為0.7質量%以下之選自由P、Ag、Si、Ge、Al、Ga、Zn、Sn及Sb所組成之群中之至少1種或2種以上作為添加元素,則可使再結晶晶粒微細化。 In addition, if it contains at least one kind or two or more kinds selected from the group consisting of P, Ag, Si, Ge, Al, Ga, Zn, Sn, and Sb with respect to the above composition in an amount of 0.7% by mass or less as an additive Element can make the recrystallized grains finer.

上述添加元素於冷軋時使差排之相互交截之頻率增加,故再結晶晶粒可微細化。 The above-mentioned added elements increase the frequency of intersecting differential rows during cold rolling, so recrystallized grains can be refined.

若含有合計超過0.7質量%之上述添加元素,則導電率降低,存在不適合作為可撓性基板用銅箔之情形,因此將0.7質量%設為上限。上述添加元素之含量之下限並無特別限制,然而例如關於各元素,工業上難以控制為小於0.0005質量%,故將各元素之含量之下限設為0.0005質量%即可。 When the total content of the above-mentioned additional elements is more than 0.7% by mass, the conductivity is lowered and the copper foil for a flexible substrate may not be suitable. Therefore, the upper limit is set to 0.7% by mass. The lower limit of the content of the above-mentioned added elements is not particularly limited. However, for example, it is difficult to control each element industrially to less than 0.0005 mass%. Therefore, the lower limit of the content of each element may be set to 0.0005 mass%.

亦可將本發明之銅箔設為由JIS-H3100(C1100)標準之精銅(TPC)或JIS-H3100(C1020)之無氧銅(OFC)所構成之組成。 The copper foil of the present invention may be composed of fine copper (TPC) based on JIS-H3100 (C1100) or oxygen-free copper (OFC) based on JIS-H3100 (C1020).

又,對於上述TPC或OFC,亦可設為含有P而成之組成。 The TPC or OFC may be a composition containing P.

<平均結晶粒徑> <Average crystal grain size>

銅箔之平均結晶粒徑為0.5~4.0μm。若平均結晶粒徑未達0.5μm,則強度變得過高,彎曲剛性變大,彈回量(spring back)變大,不適合可撓性印刷基板 用途。若平均結晶粒徑超過4.0μm,則軟蝕刻性劣化。 The average crystal grain size of the copper foil is 0.5 to 4.0 μm. If the average crystal grain size is less than 0.5 μm, the strength becomes too high, the bending rigidity becomes large, and the spring back becomes large, which is not suitable for a flexible printed circuit board. use. When the average crystal grain size exceeds 4.0 μm, soft etching properties are deteriorated.

平均結晶粒徑之測定為了避免誤差,對箔表面以100μm×100μm之視域觀察3視域以上而進行。箔表面之觀察可使用SIM(Scanning Ion Microscope)或SEM(Scanning Electron Microscope),基於JIS-H0501求出平均結晶粒徑。然而,雙晶係看作不同之晶粒進行測定。 The measurement of the average crystal grain size is performed in order to avoid errors by observing the surface of the foil in a viewing area of 100 μm × 100 μm for 3 or more viewing areas. Observation of the foil surface can be performed using SIM (Scanning Ion Microscope) or SEM (Scanning Electron Microscope), and the average crystal grain size can be determined based on JIS-H0501. However, the double crystal system was measured as a different crystal grain.

<集合度> <Collection degree>

銅箔表面之由X射線繞射強度I(220)/I0(220)所表示之集合度為1.3以上且未達7.0。 The aggregation degree represented by the X-ray diffraction intensity I (220) / I 0 (220) on the surface of the copper foil is 1.3 or more and less than 7.0.

若集合度未達1.3,則厚度方向之蝕刻速度變小,銅箔之後述之蝕刻因子降低。於集合度成為7.0以上之應變速度之情形時,雖然蝕刻因子良好,但存在壓延銅箔之形狀變差而難以用作FPC用銅箔之情形。 If the degree of aggregation is less than 1.3, the etching rate in the thickness direction will decrease, and the etching factor described later in the copper foil will decrease. When the aggregation degree is a strain rate of 7.0 or more, although the etching factor is good, the shape of the rolled copper foil is deteriorated and it is difficult to use it as a copper foil for FPC.

集合度係如下測定。首先,對於銅箔之壓延面,測定{220}面之X射線繞射強度,設為I(220)。 The degree of aggregation is measured as follows. First, about the rolled surface of the copper foil, the X-ray diffraction intensity of the {220} plane was measured, and it was set to I (220).

又,於同一條件下,對於純銅粉末(325mesh(JIS Z8801、純度99.5%),於氫氣氣流中於300℃加熱1小時後使用),測定{220}面之X射線繞射強度,設為I0(220)。 Also, under the same conditions, for pure copper powder (325mesh (JIS Z8801, purity 99.5%), used after heating at 300 ° C for 1 hour in a hydrogen gas stream), the X-ray diffraction intensity on the {220} plane was measured and set to I 0 (220).

進而,如下標準化。 Furthermore, it standardized as follows.

.{220}面集合度:I(220)/I0(220) . {220} Face collection degree: I (220) / I 0 (220)

X射線繞射之測定條件如下。 The measurement conditions of X-ray diffraction are as follows.

.入射X射線源:Co、.加速電壓:25kV、.管電流:20mA、.發散狹縫:1度、.散射狹縫:1度、 .光接收狹縫:0.3mm、.發散縱向限制狹縫:10mm、.單色光接收狹縫:0.8mm . Incident X-ray source: Co ,. Accelerating voltage: 25kV,. Tube current: 20mA,. Divergent slit: 1 degree,. Scattering slit: 1 degree, . Light receiving slit: 0.3mm,. Divergence longitudinal limit slit: 10mm,. Monochromatic light receiving slit: 0.8mm

<於300℃ 30分鐘之熱處理> <Heat treatment at 300 ° C for 30 minutes>

本發明之銅箔係用於可撓性印刷基板,此時,積層銅箔與樹脂而成之CCL於200~400℃進行用以使樹脂硬化之熱處理,因此平均結晶粒徑、及由I(220)/I0(220)所表示之集合度變化。 The copper foil of the present invention is used for a flexible printed circuit board. At this time, the CCL formed by laminating the copper foil and the resin is heat-treated at 200 to 400 ° C to harden the resin. Therefore, the average crystal grain size, and I ( 220) / I 0 (220) changes in the degree of aggregation.

因此,於與樹脂積層前後,平均結晶粒徑、及集合度變化。因此,本案之請求項1之可撓性印刷基板用銅箔規定了成為與樹脂積層後而成之覆銅積層體時之受到熱處理之狀態之銅箔。即,已受到熱處理,故而為不進行新的熱處理之狀態之銅箔。 Therefore, before and after lamination with the resin, the average crystal grain size and the degree of aggregation change. Therefore, the copper foil for a flexible printed circuit board of claim 1 of the present case specifies a copper foil in a state where it is subjected to a heat treatment when it becomes a copper-clad laminate formed by being laminated with a resin. That is, the copper foil has been subjected to heat treatment, and thus is not in a state of being subjected to a new heat treatment.

另一方面,本案之請求項4之可撓性印刷基板用銅箔規定了對與樹脂積層前之銅箔進行了上述熱處理時之狀態(例如,將熱處理前之銅箔線圈納入CCL之製造工場並積層於CCL時之經加熱之狀態)。該於300℃ 30分鐘之熱處理係模擬於CCL之積層時對樹脂進行硬化熱處理之溫度條件者。再者,為了防止熱處理所導致之銅箔表面之氧化,熱處理之環境較佳為還原性或非氧化性之環境,例如,只要設為真空環境或由氬氣、氮氣、氫氣、一氧化碳氣體等或者該等之混合氣體所構成之環境等即可。升溫速度只要為100~300℃/min之間即可。 On the other hand, the copper foil for flexible printed circuit board of claim 4 of the present case specifies the state when the above-mentioned heat treatment is performed on the copper foil before being laminated with the resin (for example, the copper foil coil before the heat treatment is incorporated into the CCL manufacturing plant Heated state when laminated in CCL). The heat treatment at 300 ° C for 30 minutes is a temperature condition that simulates the hardening heat treatment of the resin when the CCL is laminated. Furthermore, in order to prevent oxidation of the copper foil surface caused by heat treatment, the heat treatment environment is preferably a reducing or non-oxidizing environment. For example, as long as it is set to a vacuum environment or made of argon, nitrogen, hydrogen, carbon monoxide gas, or The environment constituted by these mixed gases is sufficient. The heating rate may be between 100 and 300 ° C / min.

本發明之銅箔例如可如下製造。首先,將銅錠熔解、鑄造後,熱軋,進行冷軋及退火,較佳為於冷軋時之初期進行再結晶退火,並且進行最終再結晶退火及最終冷軋,藉此可製造箔。 The copper foil of this invention can be manufactured as follows, for example. First, after melting and casting a copper ingot, hot rolling, cold rolling, and annealing are performed. Preferably, recrystallization annealing is performed at the initial stage of cold rolling, and final recrystallization annealing and final cold rolling are performed, thereby manufacturing a foil.

藉由調整冷軋之總加工度η、最終冷軋前且最終再結晶退火後之平均結晶粒徑、及最終冷軋前之最終道次之應變速度,可控制平均結晶粒徑、及集合 度。 By adjusting the total processing degree η of the cold rolling, the average crystal grain size before the final cold rolling and after the final recrystallization annealing, and the strain rate of the final pass before the final cold rolling, the average crystal grain size and aggregation can be controlled degree.

若將總加工度η設為6.10以上,則可更確實地增加由I(220)/I0(220)所表示之集合度。 When the total processing degree η is set to 6.10 or more, the degree of aggregation represented by I (220) / I 0 (220) can be increased more reliably.

若將最終冷軋前且最終再結晶退火後之平均結晶粒徑設為5~20μm,則可確實地將製品之平均結晶粒徑設為0.5~4.0μm。 If the average crystal grain size before the final cold rolling and after the final recrystallization annealing is 5 to 20 μm, the average crystal grain size of the product can be reliably set to 0.5 to 4.0 μm.

若將最終冷軋前之最終道次之應變速度設為1000(/秒)以上,則可更確實地增加集合度。 If the strain rate of the final pass before the final cold rolling is set to 1000 (/ sec) or more, the degree of aggregation can be increased more reliably.

<覆銅積層體及可撓性印刷基板> <Copper-clad laminate and flexible printed circuit board>

又,於本發明之銅箔上(1)塗膜(casting)樹脂前驅物(例如,被稱為清漆之聚醯亞胺前驅物)並施以熱使其聚合,(2)使用與基底膜同種之熱塑性接著劑將基底膜層疊於本發明之銅箔上,藉此獲得由銅箔與樹脂基材之2層所構成之覆銅積層體(CCL)。又,藉由在本發明之銅箔上層疊塗佈有接著劑之基底膜,而獲得由銅箔、樹脂基材、及該等之間之接著層之3層所構成之覆銅積層體(CCL)。該等CCL製造時,銅箔受到熱處理而再結晶。 In addition, (1) a resin precursor (for example, a polyimide precursor called varnish) is cast on the copper foil of the present invention and is polymerized by applying heat, and (2) a base film is used. The same kind of thermoplastic adhesive is used to laminate a base film on the copper foil of the present invention, thereby obtaining a copper-clad laminate (CCL) composed of two layers of a copper foil and a resin substrate. Furthermore, by laminating a base film coated with an adhesive on the copper foil of the present invention, a copper-clad laminate composed of three layers of a copper foil, a resin substrate, and an adhesive layer therebetween ( CCL). When these CCLs are manufactured, the copper foil is heat-treated and recrystallized.

於該等上使用光蝕刻法(photolithography)形成電路,視需要對電路實施鍍覆,層疊覆蓋膜(cover lay film),藉此獲得可撓性印刷基板(可撓性配線板)。 A circuit is formed on the substrate using photolithography, and the circuit is plated as necessary, and a cover lay film is laminated to obtain a flexible printed circuit board (flexible wiring board).

因此,本發明之覆銅積層體係積層銅箔與樹脂層而成。又,本發明之可撓性印刷基板係於覆銅積層體之銅箔上形成電路而成。 Therefore, the copper-clad laminated system of the present invention is formed by laminating a copper foil and a resin layer. The flexible printed circuit board of the present invention is formed by forming a circuit on a copper foil of a copper-clad laminate.

作為樹脂層,可列舉PET(聚對苯二甲酸乙二酯)、PI(聚醯亞胺)、LCP(液晶聚合物)、PEN(聚萘二甲酸乙二酯),然而並不限定於此。又,作為樹脂層,可使用該等之樹脂膜。 Examples of the resin layer include PET (polyethylene terephthalate), PI (polyimide), LCP (liquid crystal polymer), and PEN (polyethylene naphthalate), but it is not limited thereto. . As the resin layer, such a resin film can be used.

作為樹脂層與銅箔之積層方法,可於銅箔之表面塗佈成為樹脂層之材料並加熱成膜。又,使用樹脂膜作為樹脂層,可於樹脂膜與銅箔之間使用以下接著 劑,亦可不使用接著劑而將樹脂膜熱壓接於銅箔。然而,自不對樹脂膜施加多餘之熱之方面而言,較佳為使用接著劑。 As a method of laminating a resin layer and a copper foil, the surface of the copper foil can be coated with a material that becomes a resin layer and heated to form a film. In addition, a resin film is used as the resin layer, and the following adhesion can be used between the resin film and the copper foil It is also possible to thermocompression-bond a resin film to a copper foil without using an adhesive. However, it is preferable to use an adhesive from the point which does not apply excess heat to a resin film.

於使用膜作為樹脂層之情形時,將該膜經由接著劑層積層於銅箔即可。於該情形時,較佳為使用與膜為相同成分之接著劑。例如,於使用聚醯亞胺膜作為樹脂層之情形時,較佳為接著劑層亦使用聚醯亞胺系接著劑。再者,此處所謂之聚醯亞胺接著劑係指包含醯亞胺鍵之接著劑,亦包含聚醚醯亞胺等。 When a film is used as the resin layer, the film may be laminated on a copper foil via an adhesive. In this case, it is preferable to use an adhesive having the same composition as the film. For example, in the case where a polyimide film is used as the resin layer, it is preferable to use a polyimide-based adhesive in the adhesive layer. Here, the polyfluorene imine adhesive refers to an adhesive containing a fluorene imine bond, and also includes polyether fluorene imine and the like.

再者,本發明並不限定於上述實施形態。又,只要發揮本發明之作用效果,則上述實施形態之銅合金亦可含有其他成分。又,亦可為電解銅箔。 The present invention is not limited to the embodiments described above. Moreover, as long as the effect of this invention is exhibited, the copper alloy of the said embodiment may contain other components. Moreover, it may be electrolytic copper foil.

例如,可對銅箔之表面實施粗化處理、防銹處理、耐熱處理、或該等之組合之表面處理。 For example, the surface of the copper foil may be subjected to a roughening treatment, an anti-rust treatment, a heat-resistant treatment, or a combination of these.

[實施例] [Example]

其次,列舉實施例對本發明更詳細地進行說明,但本發明並不限定於該等。於電解銅中分別添加表1所示之元素設為表1所示之組成,於Ar環境下進行鑄造獲得鑄錠。鑄錠中之氧含量未達15ppm。將該鑄錠於900℃均質化退火後,熱軋,其後反覆進行冷軋及再結晶退火,進而進行最終再結晶退火及最終冷軋,獲得壓延銅箔。 Next, the present invention will be described in more detail with examples, but the present invention is not limited to these. The elements shown in Table 1 were added to the electrolytic copper to have the composition shown in Table 1, and casting was performed in an Ar environment to obtain an ingot. The oxygen content in the ingot did not reach 15 ppm. The ingot was homogenized and annealed at 900 ° C, and then hot-rolled, followed by repeated cold rolling and recrystallization annealing, and then final recrystallization annealing and final cold rolling to obtain a rolled copper foil.

對所得之壓延銅箔於氬氣環境下實施300℃×30分鐘之熱處理,獲得銅箔樣本。熱處理後之銅箔模擬於CCL之積層時受到熱處理之狀態。 The obtained rolled copper foil was heat-treated at 300 ° C for 30 minutes under an argon atmosphere to obtain a copper foil sample. The heat-treated copper foil simulates the state of being subjected to heat treatment when the CCL is laminated.

<銅箔樣本之評價> <Evaluation of copper foil samples>

1.導電率 Electrical conductivity

對於上述熱處理後之各銅箔樣本,基於JIS H 0505藉由4端子法測定25℃之導電率(%IACS)。 For each copper foil sample after the heat treatment, the electrical conductivity (% IACS) at 25 ° C was measured by the 4-terminal method based on JIS H 0505.

若導電率大於80%IACS,則導電性良好。 If the electrical conductivity is greater than 80% IACS, the electrical conductivity is good.

2.集合度 2. Degree of collection

對於上述熱處理後之各銅箔樣本,使用X射線繞射裝置(RINT-2500:理學電機製造)藉由上述方法測定集合度。再者,除由I(220)/I0(220)所表示之集合度以外,同樣地測定{200}面之X射線繞射強度,亦求出I(200)/I0(200)。 For each copper foil sample after the heat treatment, the degree of aggregation was measured by the above method using an X-ray diffraction device (RINT-2500: manufactured by Rigaku Electric). In addition, the X-ray diffraction intensity of the {200} plane was measured in the same manner except for the degree of aggregation represented by I (220) / I 0 (220), and I (200) / I 0 (200) was also determined.

3.蝕刻因子EF 3. Etching factor EF

將銅箔與樹脂貼合,其後將乾膜抗蝕劑層壓於銅箔表面,於抗蝕劑上形成短條狀(L/S=25/25)之電路圖案。藉由氯化銅蝕刻劑之噴霧蝕刻改變蝕刻時間而實施蝕刻。 The copper foil was bonded to the resin, and then a dry film resist was laminated on the surface of the copper foil to form a short strip (L / S = 25/25) circuit pattern on the resist. The etching is performed by changing the etching time by spray etching of a copper chloride etchant.

EF之測定方法存在多種,於本發明中,藉由作為蝕刻因子EF之最普通之求出方法,即,以相對於寬度方向之深度方向之蝕刻速度進行評價。於本發明中,如圖1、圖2所示進行測定。再者,下述式(1)僅著眼於深度方向及寬度方向之蝕刻速度,不考慮傾斜方向之蝕刻速度。 There are various methods for measuring EF. In the present invention, the most common method for obtaining the etching factor EF is to evaluate the etching factor in the depth direction with respect to the width direction. In the present invention, the measurement is performed as shown in FIGS. 1 and 2. In addition, the following formula (1) focuses only on the etching rate in the depth direction and the width direction, and does not consider the etching rate in the oblique direction.

EF如圖1所示,由1條電路之剖面之寬度方向及深度方向之蝕刻速度由下式(1)求出。 As shown in FIG. 1, EF is obtained from the etching rate in the width direction and the depth direction of the cross section of a circuit by the following formula (1).

EF=深度方向之蝕刻速度/寬度方向之蝕刻速度 (1) EF = etch rate in depth direction / etch rate in width direction (1)

然而,由於蝕刻速度本身之測定較為困難,故分別測定改變蝕刻時間時之電路之寬度及深度。繼而,如圖2所示,將橫軸設為電路之寬度,將縱軸設為電路之深度,對各資料進行繪圖,由下式(2)近似地求出。即,由利用最小平方法之一次之近似式求出圖2之曲線圖之斜率作為EF。 However, since the measurement of the etching rate itself is difficult, the width and depth of the circuit when the etching time is changed are measured separately. Next, as shown in FIG. 2, the horizontal axis is set to the width of the circuit, and the vertical axis is set to the depth of the circuit. Each data is plotted and approximated by the following formula (2). That is, the slope of the graph of FIG. 2 is obtained as the EF from an approximate formula using the least square method.

EF≒深度之時間變化/(寬度之時間變化/2)=2×深度之時間變化/寬度之時間變化 (2) EF ≒ Time change in depth / (Time change in width / 2) = 2 × Time change in depth / Time change in width (2)

此處,式(2)之係數「2」由於寬度方向之蝕刻於圖1之左右兩側進行, 故必須減半。 Here, the coefficient “2” of the formula (2) is performed on the left and right sides of FIG. 1 due to the etching in the width direction. It must be halved.

繼而,根據EF之值按照以下指標進行評價。若評價為◎、○,則良好。 Then, the following index was evaluated based on the value of EF. When the evaluation was ◎ or ○, it was good.

◎:EF為1.4以上 ◎: EF is 1.4 or more

×:EF為1.1以上且未達1.4 ×: EF is 1.1 or more and less than 1.4

×:EF未達1.1 ×: EF is less than 1.1

4.軟蝕刻性 4. Soft etching

對於上述熱處理後之各銅箔樣本,於以下條件下對表面進行軟蝕刻。作為評價軟蝕刻性之指標,對軟蝕刻後之銅箔表面之基於JIS-B0601(2001)之算術平均粗糙度Ra進行測定。 The surface of each copper foil sample after the heat treatment was soft-etched under the following conditions. As an index for evaluating soft etchability, the arithmetic average roughness Ra of the copper foil surface after soft etch based on JIS-B0601 (2001) was measured.

作為軟蝕刻條件,模擬用於賦予銅箔與抗蝕劑之密接性之軟蝕刻,將銅箔於過硫酸鈉濃度100g/L、過氧化氫濃度35g/L之水溶液(液溫25℃)中浸漬420秒。將算術平均粗糙度Ra為0.2μm以下之情形視為軟蝕刻性良好(○),將算術平均粗糙度Ra超過0.2μm之情形視為軟蝕刻性不良(×)。 As the soft etching conditions, the soft etching used to provide the adhesion between the copper foil and the resist was simulated, and the copper foil was placed in an aqueous solution (liquid temperature 25 ° C) of 100 g / L sodium sulfate concentration and 35 g / L hydrogen peroxide concentration. Dip for 420 seconds. A case where the arithmetic average roughness Ra is 0.2 μm or less is regarded as good soft etchability (○), and a case where the arithmetic average roughness Ra exceeds 0.2 μm is regarded as poor soft etchability (×).

若於軟蝕刻後抗蝕劑良好地追隨銅箔表面,則密接性優異,電路圖案之精度提高,軟蝕刻性變良好。若Ra超過0.2μm,則抗蝕劑難以追隨銅箔表面,抗蝕劑與銅箔表面之間易產生間隙。而且,因蝕刻液侵入該間隙導致電路圖案之形成時之精度降低。 When the resist follows the surface of the copper foil well after the soft etching, the adhesion is excellent, the accuracy of the circuit pattern is improved, and the soft etching is good. When Ra exceeds 0.2 μm, it is difficult for the resist to follow the surface of the copper foil, and a gap is easily generated between the resist and the surface of the copper foil. In addition, the accuracy of the circuit pattern is reduced due to the etching solution entering the gap.

5.結晶粒徑 5. Crystal size

對於上述熱處理後之各銅箔樣本,使用SEM(Scanning Electron Microscope)對壓延面進行觀察,基於JIS H 0501求出平均粒徑。然而,雙晶係看作不同之晶粒進行測定。測定區域係設為平行於壓延方向之剖面之400μm×400μm。 About each copper foil sample after the said heat processing, the rolled surface was observed using SEM (Scanning Electron Microscope), and the average particle diameter was calculated | required based on JIS H 0501. However, the double crystal system was measured as a different crystal grain. The measurement area is 400 μm × 400 μm in a cross section parallel to the rolling direction.

將所得之結果表示於表1、表2。 The obtained results are shown in Tables 1 and 2.

自表1、表2可知,於結晶粒徑為0.5~4.0μm、且由I(220)/I0(220)所表示之集合度為1.3以上且未達7.0之各實施例之情形時,蝕刻因子及 軟蝕刻性均優異。藉此,於銅箔整個面可獲得均勻之電路圖案而良率提高,進而使電路微細化時電路圖案之精度提高。 As can be seen from Tables 1 and 2, when the crystal grain size is 0.5 to 4.0 μm and the degree of aggregation represented by I (220) / I 0 (220) is 1.3 or more and less than 7.0, Both the etching factor and soft etchability are excellent. As a result, a uniform circuit pattern can be obtained on the entire surface of the copper foil, and the yield is improved, thereby further improving the accuracy of the circuit pattern when the circuit is miniaturized.

於最終冷軋之最終道次之應變速度未達1000(s-1)之比較例1~4之情形時,集合度未達1.3,雖然軟蝕刻性良好,但蝕刻因子降低。因此,於使電路微細化時,電路圖案之精度降低。 In the case of Comparative Examples 1 to 4 in which the strain rate in the final pass of the final cold rolling did not reach 1000 (s-1), the degree of aggregation did not reach 1.3, and although the soft etching property was good, the etching factor decreased. Therefore, when the circuit is miniaturized, the accuracy of the circuit pattern is reduced.

於最終冷軋前且最終再結晶退火後之平均結晶粒徑超過20μm之比較例5之情形時,製品之平均結晶粒徑超過4.0μm,雖然蝕刻因子良好,但軟蝕刻性較差。因此,於銅箔整個面無法獲得均勻之電路圖案而良率降低。 In the case of Comparative Example 5 where the average crystal grain size before the final cold rolling and after the final recrystallization annealing exceeds 20 μm, the average crystal grain size of the product exceeds 4.0 μm. Although the etching factor is good, the soft etchability is poor. Therefore, a uniform circuit pattern cannot be obtained on the entire surface of the copper foil, and the yield is reduced.

於總加工度未達6.10之比較例6之情形時,集合度未達1.3,蝕刻因子降低。 In the case of Comparative Example 6 in which the total processing degree did not reach 6.10, the aggregation degree did not reach 1.3, and the etching factor decreased.

於添加元素之合計含量超過0.7質量%之比較例7之情形時,導電率未達80%,導電性較差。 In the case of Comparative Example 7 where the total content of the added elements exceeds 0.7% by mass, the electrical conductivity is less than 80%, and the electrical conductivity is poor.

Claims (8)

一種可撓性印刷基板用銅箔,其係由99.0質量%以上之Cu、及剩餘部分之不可避免之雜質所構成之銅箔,且平均結晶粒徑為0.5~4.0μm,銅箔表面之由X射線繞射強度I(220)/I0(220)所表示之集合度為1.3以上且未達7.0,導電率為80%以上。 A copper foil for a flexible printed circuit board, which is a copper foil composed of 99.0% by mass of Cu or more and unavoidable impurities, and has an average crystal grain size of 0.5 to 4.0 μm. The aggregation degree represented by the X-ray diffraction intensity I (220) / I 0 (220) is 1.3 or more and less than 7.0, and the conductivity is 80% or more. 如請求項1所述之可撓性印刷基板用銅箔,其係由JIS-H3100(C1100)標準之精銅或JIS-H3100(C1020)之無氧銅所構成。 The copper foil for a flexible printed circuit board as described in claim 1 is composed of JIS-H3100 (C1100) standard copper or JIS-H3100 (C1020) oxygen-free copper. 如請求項1所述之可撓性印刷基板用銅箔,其係進而含有合計為0.7質量%以下之選自由P、Ag、Si、Ge、Al、Ga、Zn、Sn及Sb所組成之群中之至少1種或2種以上作為添加元素而成。 The copper foil for a flexible printed circuit board according to claim 1, which further contains 0.7% by mass or less of a group selected from the group consisting of P, Ag, Si, Ge, Al, Ga, Zn, Sn, and Sb. At least one or two or more of them are added as an additive element. 如請求項2所述之可撓性印刷基板用銅箔,其係進而含有合計為0.7質量%以下之選自由P、Ag、Si、Ge、Al、Ga、Zn、Sn及Sb所組成之群中之至少1種或2種以上作為添加元素而成。 The copper foil for a flexible printed circuit board according to claim 2, which further contains 0.7% by mass or less of a group selected from the group consisting of P, Ag, Si, Ge, Al, Ga, Zn, Sn, and Sb. At least one or two or more of them are added as an additive element. 如請求項1至4中任一項所述之可撓性印刷基板用銅箔,其中,於300℃×30min退火(其中,升溫速度為100℃/min~300℃/min)後,上述平均結晶粒徑為0.5~4.0μm,上述集合度為1.3以上且未達7.0,上述導電率為80%以上。 The copper foil for a flexible printed circuit board according to any one of claims 1 to 4, wherein after the annealing is performed at 300 ° C for 30 minutes (wherein the heating rate is 100 ° C / min to 300 ° C / min), the average The crystal grain size is 0.5 to 4.0 μm, the degree of aggregation is 1.3 or more and less than 7.0, and the electrical conductivity is 80% or more. 一種覆銅積層體,其係積層請求項1至5中任一項所述之可撓性印刷基板用銅箔、與樹脂層而成。 A copper-clad laminate comprising a copper foil for a flexible printed circuit board according to any one of claims 1 to 5 and a resin layer. 一種可撓性印刷基板,其係於請求項6所述之覆銅積層體中之上述銅箔上形成電路而成。 A flexible printed circuit board is formed by forming a circuit on the copper foil in the copper-clad laminate according to claim 6. 一種電子機器,其使用請求項7所述之可撓性印刷基板。 An electronic device using the flexible printed circuit board according to claim 7.
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