TW201901978A - 太陽能電池 - Google Patents

太陽能電池 Download PDF

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TW201901978A
TW201901978A TW106121850A TW106121850A TW201901978A TW 201901978 A TW201901978 A TW 201901978A TW 106121850 A TW106121850 A TW 106121850A TW 106121850 A TW106121850 A TW 106121850A TW 201901978 A TW201901978 A TW 201901978A
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conductive film
transparent conductive
semiconductor structure
solar cell
electrode
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TWI656654B (zh
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張金
魏洋
姜開利
范守善
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鴻海精密工業股份有限公司
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Abstract

一種太陽能電池，其包括一半導體結構，所述半導體結構包括一P型半導體層及一N型半導體層，並定義一第一表面及與第一表面相對的第二表面；一背電極設置於半導體結構的第一表面，該背電極為一奈米碳管；一上電極，該上電極為一透明導電膜，該透明導電膜通過沉積方法形成於所述半導體結構的第二表面，使半導體結構設置於奈米碳管和透明導電膜之間，奈米碳管、半導體結構與透明導電膜相互層疊形成一多層立體結構。

Description

太陽能電池
本發明涉及一種太陽能電池。
太陽能是當今最清潔的能源之一，取之不盡、用之不竭。太陽能的利用方式包括光能-熱能轉換、光能-電能轉換和光能-化學能轉換。太陽能電池是光能-電能轉換的典型例子，是利用半導體材料的光生伏特原理製成的。目前，以矽基太陽能電池(請參見及多晶矽的生產, 材料與冶金學報, 張明傑等, vol6, p33-38 (2007))為主。在矽基太陽能電池中，以單晶矽和多晶矽作為光電轉換的材料。通常用單晶矽片製造。然而，目前單晶矽的製備工藝遠不能滿足發展的需要，並且製備單晶矽需要消耗大量的電能，導致單晶矽片非常昂貴，使得使用單晶矽片的也非常昂貴。近年來，具有多晶矽襯底的矽的成本日益跌落，其產量顯著增加。然而，先前技術中的多晶矽太陽能電池結構複雜。而且，在多晶矽襯底的生長過程中，由於熱應力的作用，會在晶粒中產生大量的缺陷(如懸掛鍵、晶界、位錯、微缺陷等)，影響太陽能電池的整體性能。
本發明提供了一種新型的含有范德華異質結構的太陽能電池。
一種太陽能電池，其包括一半導體結構，所述半導體結構包括一P型半導體層及一N型半導體層，並定義一第一表面及與第一表面相對的第二表面；一背電極設置於半導體結構的第一表面，該背電極為一奈米碳管；一上電極，該上電極為一透明導電膜，該透明導電膜通過沉積方法形成於所述半導體結構的第二表面，使半導體結構設置於奈米碳管和透明導電膜之間，奈米碳管、半導體結構與透明導電膜相互層疊形成一多層立體結構。
一太陽能電池，該太陽能電池包括一柵極及一絕緣層，所述絕緣層設置於柵極的表面；一半導體結構設置於絕緣層的表面，通過所述絕緣層與柵極絕緣設置，所述半導體結構包括一P型半導體層及一N型半導體層，並定義一第一表面及與第一表面相對的第二表面；一背電極設置於半導體結構的第一表面，該背電極為一奈米碳管；一上電極，該上電極為一透明導電膜，該透明導電膜通過沉積方法形成於所述半導體結構的第二表面，使半導體結構設置於奈米碳管和透明導電膜之間，奈米碳管、半導體結構與透明導電膜相互層疊形成一多層立體結構；其中，所述第一電極與奈米碳管電連接，所述第二電極與透明導電膜電連接。
相較於先前技術，本發明提供了一種新型的太陽能，該太陽能電池成本較低，結構簡單，在未來的奈米電子學和奈米光電子學領域具有巨大的應用潛力。
以下將結合附圖及具體實施例對本發明的太陽能電池作進一步的詳細說明。
請參閱圖1及圖2，本發明第一實施例提供一種太陽能電池100。該太陽能電池100包括一背電極102、一半導體結構104及一上電極106。所述背電極102設置於半導體結構104的表面。所述半導體結構104的厚度為1~1000奈米。所述上電極106設置於所述半導體結構104的表面，使半導體結構104設置於背電極102和上電極106之間。所述半導體結構104包括一P型半導體層104a及一N型半導體層104b。所述P型半導體層104a及N型半導體層104b層疊設置。所述半導體結構104包括一第一表面1042及一第二表面1044，第一表面1042和第二表面1044相對設置。
所述背電極102為一單根的奈米碳管。所述奈米碳管為金屬型奈米碳管。奈米碳管的直徑不限，可以為0.5奈米~150奈米，在某些實施例中，奈米碳管的直徑可以為1奈米~10奈米。優選地，奈米碳管為單壁奈米碳管，其直徑為1奈米~5奈米。本實施例中，奈米碳管為金屬型單壁奈米碳管，其直徑為1奈米。所述奈米碳管設置在半導體結構的第一表面1042，並與第一表面1042直接接觸。所述半導體結構104的第一表面1042可以僅包括一根奈米碳管。
所述半導體結構104為一二維層狀結構。所述二維層狀結構即半導體結構104的厚度較小，半導體結構104的厚度為1奈米~2000奈米，優選地，其厚度為1奈米~1000奈米，更優選地，所述半導體結構104的厚度為1～200奈米。所述半導體結構104包括一P型半導體層104a及一N型半導體層104b，所述P型半導體層104a及N型半導體層104b層疊設置。所述半導體結構104包括一第一表面1042及一第二表面1044，第一表面1042和第二表面1044相對設置。請參見圖2，所述第一表面1042可以為P型半導體層104a的表面，第二表面1044為N型半導體層104b的表面，此情況下，奈米碳管設置在P型半導體層104a的表面，透明導電膜106設置在N型半導體層104b的表面。在另外的實施例中，請參見圖3，所述第一表面1042可以為N型半導體層104b的表面，第二表面1044為P型半導體層104a的表面，此情況下，奈米碳管設置在N型半導體層104b的表面，透明導電膜106設置在P型半導體層104a的表面。所述P型半導體層104a或N型半導體層104b的材料不限，可以為無機化合物半導體、元素半導體、有機半導體材料或這些材料摻雜後的材料。本實施例中，P型半導體層104a的材料為硒化鎢（WSe2 ），其厚度為6奈米，N型半導體層104b的材料為硫化鉬（MoS2 ），其厚度為2.6奈米，奈米碳管設置在N型半導體層104b的表面，透明導電膜106設置在P型半導體層104a的表面。
所述上電極106為一透明導電膜。所述透明導電膜的材料為導電材料，可以為金屬、導電聚合物或ITO。透明導電膜直接沉積在半導體結構104的第二表面1044。透明導電膜沉積在半導體結構104的第一表面1044的具體方法不限，可以為離子濺射、磁控濺射或其他鍍膜方法。所述透明導電膜的厚度不限，可以為5奈米～100微米。在一些實施例中，透明導電膜的厚度為5奈米～100奈米；在另一些實施例中，透明導電膜的厚度為5奈米～20奈米。所述透明導電膜的形狀不限，可以為長條形、線性、方形等形狀。本實施例中，所述透明導電膜的材料為金屬，其形狀為長條形。
所述背電極102、半導體結構104及上電極106相互層疊設置。具體的，所述奈米碳管、半導體結構104和透明導電膜相互層疊形成一多層立體結構110。由於奈米碳管相對於半導體結構104和透明導電膜的尺寸較小，該多層立體結構110的橫截面的面積由奈米碳管的直徑和長度決定。所述多層立體結構110定義一橫向截面及一豎向截面，所述橫向截面即平行於半導體結構104表面的方向的截面，所述縱向截面即垂直於半導體結構104的表面的方向的截面。所述橫向截面的面積由奈米碳管102的直徑和長度決定。所述縱向截面的面積由奈米碳管102的長度和多層立體結構110的厚度決定。由於奈米碳管102相對於半導體結構104和導電膜106的尺寸較小，該多層立體結構110的橫向截面和縱向截面的面積均較小，多層立體結構110的體積也很小。優選地，該多層立體結構110的橫截面的面積為0.25nm2 ~100000nm2 。更優選地，該多層立體結構110的橫截面的面積為1nm2 ~10000nm2 。奈米碳管和透明導電膜與二維半導體結構104在多層立體結構110處形成范德華異質結構。在應用時，奈米碳管和透明導電膜可以看作設置在半導體結構104的兩個相對表面上的電極，當在奈米碳管和透明導電膜上施加偏壓實現導通時，電流的流動路徑為穿過多層立體結構110的橫截面，所述太陽能電池100的有效部分為多層立體結構110。所述太陽能電池100的整體尺寸只需確保大於多層立體結構110的體積即可，因此，太陽能電池100可以具有較小的尺寸，只需確保其包括多層立體結構110。所述太陽能電池100可以為一奈米級的太陽能電池。該太陽能電池具有奈米級的尺寸以及更高的集成度。
本發明的太陽能電池100為一基於奈米碳管不對稱范德華異質結構（CCVH），其中半導體結構為一二維結構，其被不對稱地夾在奈米碳管和透明導電膜之間，半導體結構包括一P-N結，奈米碳管和透明導電膜分別作為P-N結的兩個電極。由於奈米碳管特殊的幾何形狀和能帶結構，使奈米碳管的費米能級更容易被柵極電壓調製，因此，這種太陽能電池呈現出獨特優異的性能。
請參見圖4，本發明第二實施例提供一種太陽能電池200。所述太陽能電池200包括一第一電極202、一第二電極204、一絕緣層210、一柵極208及一太陽能電池單元206。所述太陽能電池單元206與第一實施例中的所提供的太陽能電池100的結構相同，在此不在重複描述。也就是說，與第一實施例所提供的太陽能電池100相比，本發明所提供的太陽能電池200進一步包括一第一電極202、一第二電極204、一絕緣層210及一柵極208。具體地，所述太陽能電池單元206通過絕緣層210與柵極208絕緣設置，所述第一電極202與背電極102電連接，所述第二電極204與上電極106電連接。所述柵極208通過所述絕緣層210與背電極102、半導體結構104、上電極106、第一電極202及第二電極204絕緣設置。
所述太陽能電池200中，柵極208與絕緣層210層疊設置，所述太陽能電池單元206設置在絕緣層210的表面，使絕緣層210位於柵極208和太陽能電池100之間。所述太陽能電池200中，背電極102即奈米碳管直接設置於絕緣層210的表面，半導體結構104設置於奈米碳管的上方，使奈米碳管位於半導體結構104和絕緣層210之間，上電極106即透明導電膜位於半導體結構104的上方。本發明中，奈米碳管直接設置在絕緣層210表面，奈米碳管靠近柵極208，柵極208可以控制太陽能電池單元206。另外，由於透明導電膜遠離柵極208，透明導電膜不會在半導體結構104和柵極208產生屏蔽效應，以免太陽能電池200無法工作。本實施例中，奈米碳管設置在N型半導體層104b的表面，透明導電膜設置在P型半導體層104a的表面，P型半導體層104a為厚度為6奈米的WSe2 ，N型半導體層104b為厚度為2.6奈米的MoS2 。
所述第一電極202和第二電極204均由導電材料組成，該導電材料可選擇為金屬、ITO、ATO、導電銀膠、導電聚合物以及導電奈米碳管等。該金屬材料可以為鋁、銅、鎢、鉬、金、鈦、鈀或任意組合的合金。所述第一電極202和第二電極204也可以均為一層導電薄膜，該導電薄膜的厚度為2奈米-100微米。本實施例中，所述第一電極202、第二電極204為金屬Au和Ti得到的金屬複合結構，具體地，所述金屬複合結構是由一層金屬Au和一層金屬Ti組成，Au設置在Ti的表面。所述金屬Ti的厚度為5奈米，金屬Au的厚度為5奈米。本實施例中，所述第一電極202與奈米碳管電連接，設置於奈米碳管的一端並貼合於奈米碳管的表面，其中，Ti層設置於奈米碳管表面，Au層設置於Ti層表面；所述第二電極204與透明導電膜電連接，並設置於透明導電膜的一端並貼合於透明導電膜的表面，其中，Ti層設置於透明導電膜表面，Au層設置於Ti層表面。
所述絕緣層210的材料為絕緣材料，其厚度為1奈米～100微米。絕緣層210使奈米碳管與柵極208間隔絕緣設置。本實施例中，絕緣層的材料為氧化矽。
所述柵極208由導電材料組成，該導電材料可選擇為金屬、ITO、ATO、導電銀膠、導電聚合物以及導電奈米碳管等。該金屬材料可以為鋁、銅、鎢、鉬、金、鈦、鈀或任意組合的合金。本實施例中，所述柵極208為一層狀結構，絕緣層210設置於柵極208的表面，所述第一電極202、第二電極204、以及太陽能電池100設置於絕緣層210上，並由柵極208和絕緣層210支撐。
本發明所提供的太陽能電池200在應用時，太陽光透過透明導電膜照射在半導體結構104上，由於半導體結構104與奈米碳管和透明導電膜形成范德華異質結構，可以產生光伏效應，將光能轉化為電能。本發明所提供的太陽能電池200，由於奈米碳管作為背電極102，直接設置在絕緣層210上，與柵極208僅間隔一層絕緣層210，由於奈米碳管的特殊性能，可以通過柵極調節太陽能電池單元206中半導體結構104的工作性能，可以使由不同半導體材料構建太陽能電池200性能得到優化。
另外，本領域技術人員還可以在本發明精神內做其他變化，這些依據本發明精神所做的變化，都應包含在本發明所要求保護的範圍內。綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。
100；200‧‧‧太陽能電池
102‧‧‧背電極
104‧‧‧半導體結構
104a‧‧‧P型半導體層
104b‧‧‧N型半導體層
106‧‧‧上電極
110‧‧‧多層立體結構
202‧‧‧第一電極
204‧‧‧第二電極
206‧‧‧太陽能電池單元
208‧‧‧柵極
210‧‧‧絕緣層
圖1為本發明第一實施例提供的太陽能電池的整體結構示意圖。
圖2為本發明第一實施例提供的太陽能電池的側視示意圖。
圖3為本發明第一實施例提供的另一種太陽能電池側視示意圖。
圖4為本發明第二實施例提供的太陽能電池的結構示意圖。
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Claims (10)

  1. 一種太陽能電池，其包括： 一半導體結構，所述半導體結構包括相互層疊設置的P型半導體層及N型半導體層，並定義一第一表面及與第一表面相對的第二表面； 一背電極設置於半導體結構的第一表面，所述背電極為一奈米碳管； 一透明導電膜，該透明導電膜通過沉積方法形成於所述半導體結構的第二表面，使半導體結構設置於奈米碳管和透明導電膜之間，奈米碳管、半導體結構與透明導電膜相互層疊形成一多層立體結構，所述透明導電膜為上電極。
  2. 如請求項第1項所述之太陽能電池，其中，所述奈米碳管為金屬型奈米碳管。
  3. 如請求項第2項所述之太陽能電池，其中，所述奈米碳管為單壁奈米碳管。
  4. 如請求項第1項所述之太陽能電池，其中，所述多層立體結構的橫截面面積在1nm2 ~10000nm2 之間。
  5. 如請求項第1項所述之太陽能電池，其中，所述半導體層的厚度為1奈米~1000奈米。
  6. 如請求項第1項所述之太陽能電池，其中，所述透明導電膜的沉積方法包括離子濺射、磁控濺射或其它鍍膜方法。
  7. 如請求項第1項所述之太陽能電池，其中，所述透明導電膜的厚度為5奈米～100奈米。
  8. 一種太陽能電池，該太陽能電池包括： 一柵極及一絕緣層，所述絕緣層設置於柵極的表面； 一半導體結構設置於絕緣層的表面，通過所述絕緣層與柵極絕緣設置，所述半導體結構包括一P型半導體層及一N型半導體層，並定義一第一表面及與第一表面相對的第二表面； 一背電極設置於半導體結構的第一表面，該背電極為一奈米碳管； 一上電極，該上電極為一透明導電膜，該透明導電膜通過沉積方法形成於所述半導體結構的第二表面，使半導體結構設置於奈米碳管和透明導電膜之間，奈米碳管、半導體結構與透明導電膜相互層疊形成一多層立體結構； 其中，所述第一電極與奈米碳管電連接，所述第二電極與透明導電膜電連接。
  9. 如請求項第8項所述之太陽能電池，其中，所述奈米碳管設置在絕緣層的表面，所述半導體結構覆蓋奈米碳管設置在絕緣層的表面。
  10. 如請求項第8項所述之太陽能電池，其中，所述第一電極設置在奈米碳管的一端並貼合奈米碳管表面，所述第二電極設置在透明導電膜的一端並貼合透明導電膜的表面。
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