CN108963003A - 太阳能电池 - Google Patents

太阳能电池 Download PDF

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CN108963003A
CN108963003A CN201710374694.9A CN201710374694A CN108963003A CN 108963003 A CN108963003 A CN 108963003A CN 201710374694 A CN201710374694 A CN 201710374694A CN 108963003 A CN108963003 A CN 108963003A
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carbon nanotube
conductive film
transparent conductive
solar battery
semiconductor structure
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CN108963003B (zh
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张金
魏洋
姜开利
范守善
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Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
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Tsinghua University
Hongfujin Precision Industry Shenzhen Co Ltd
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Priority to TW106121850A priority patent/TWI656654B/zh
Priority to US15/916,405 priority patent/US10600925B2/en
Priority to JP2018085025A priority patent/JP6730367B2/ja
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Abstract

一种太阳能电池，其包括一半导体结构，所述半导体结构包括一P型半导体层及一N型半导体层，并定义一第一表面及与第一表面相对的第二表面；一背电极设置于半导体结构的第一表面，该背电极为一碳纳米管；一上电极，该上电极为一透明导电膜，该透明导电膜通过沉积方法形成于所述半导体结构的第二表面，使半导体结构设置于碳纳米管和透明导电膜之间，碳纳米管、半导体结构与透明导电膜相互层叠形成一多层立体结构。

Description

太阳能电池
技术领域
本发明涉及一种太阳能电池。
背景技术
太阳能是当今最清洁的能源之一，取之不尽、用之不竭。太阳能的利用方式包括光能-热能转换、光能-电能转换和光能-化学能转换。太阳能电池是光能-电能转换的典型例子，是利用半导体材料的光生伏特原理制成的。目前，以硅基太阳能电池(请参见及多晶硅的生产,材料与冶金学报,张明杰等,vol6,p33-38(2007))为主。在硅基太阳能电池中，以单晶硅和多晶硅作为光电转换的材料。通常用单晶硅片制造。然而，目前单晶硅的制备工艺远不能满足发展的需要，并且制备单晶硅需要消耗大量的电能，导致单晶硅片非常昂贵，使得使用单晶硅片的也非常昂贵。近年来，具有多晶硅衬底的硅的成本日益跌落，其产量显著增加。然而，现有技术中的多晶硅太阳能电池结构复杂。而且，在多晶硅衬底的生长过程中，由于热应力的作用，会在晶粒中产生大量的缺陷(如悬挂键、晶界、位错、微缺陷等)，影响太阳能电池的整体性能。
发明内容
本发明提供了一种新型的含有范德华异质结构的太阳能电池。
一种太阳能电池，其包括一半导体结构，所述半导体结构包括一P型半导体层及一N型半导体层，并定义一第一表面及与第一表面相对的第二表面；一背电极设置于半导体结构的第一表面，该背电极为一碳纳米管；一上电极，该上电极为一透明导电膜，该透明导电膜通过沉积方法形成于所述半导体结构的第二表面，使半导体结构设置于碳纳米管和透明导电膜之间，碳纳米管、半导体结构与透明导电膜相互层叠形成一多层立体结构。
一太阳能电池，该太阳能电池包括一栅极及一绝缘层，所述绝缘层设置于栅极的表面；一半导体结构设置于绝缘层的表面，通过所述绝缘层与栅极绝缘设置，所述半导体结构包括一P型半导体层及一N型半导体层，并定义一第一表面及与第一表面相对的第二表面；一背电极设置于半导体结构的第一表面，该背电极为一碳纳米管；一上电极，该上电极为一透明导电膜，该透明导电膜通过沉积方法形成于所述半导体结构的第二表面，使半导体结构设置于碳纳米管和透明导电膜之间，碳纳米管、半导体结构与透明导电膜相互层叠形成一多层立体结构；其中，所述第一电极与碳纳米管电连接，所述第二电极与透明导电膜电连接。
相较于现有技术，本发明提供了一种新型的太阳能，该太阳能电池成本较低，结构简单，在未来的纳米电子学和纳米光电子学领域具有巨大的应用潜力。
附图说明
图1为本发明第一实施例提供的太阳能电池的整体结构示意图。
图2为本发明第一实施例提供的太阳能电池的侧视示意图。
图3为本发明第一实施例提供的另一种太阳能电池侧视示意图。
图4为本发明第二实施例提供的太阳能电池的结构示意图。
主要元件符号说明
太阳能电池 100；200
背电极 102
半导体结构 104
P型半导体层 104a
N型半导体层 104b
上电极 106
多层立体结构 110
第一电极 202
第二电极 204
太阳能电池单元 206
栅极 208
绝缘层 210
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下将结合附图及具体实施例对本发明的太阳能电池及太阳能电池作进一步的详细说明。
请参阅图1及图2，本发明第一实施例提供一种太阳能电池100。该太阳能电池100包括一背电极102、一半导体结构104及一上电极106。所述背电极102设置于半导体结构104的表面。所述半导体结构104的厚度为1～1000纳米。所述上电极106设置于所述半导体结构104的表面，使半导体结构104设置于背电极102和上电极106之间。所述半导体结构104包括一P型半导体层104a及一N型半导体层104b。所述P型半导体层104a及N型半导体层104b层叠设置。所述半导体结构104包括一第一表面1042及一第二表面1044，第一表面1042和第二表面1044相对设置。
所述背电极102为一单根的碳纳米管。所述碳纳米管为金属型碳纳米管。碳纳米管的直径不限，可以为0.5纳米～150纳米，在某些实施例中，碳纳米管的直径可以为1纳米～10纳米。优选地，碳纳米管为单壁碳纳米管，其直径为1纳米～5纳米。本实施例中，碳纳米管为金属型单壁碳纳米管，其直径为1纳米。所述碳纳米管设置在半导体结构的第一表面1042，并与第一表面1042直接接触。所述半导体结构104的第一表面1042可以仅包括一根碳纳米管。
所述半导体结构104为一二维层状结构。所述二维层状结构即半导体结构104的厚度较小，半导体结构104的厚度为1纳米～2000纳米，优选地，其厚度为1纳米～1000纳米，更优选地，所述半导体结构104的厚度为1～200纳米。所述半导体结构104包括一P型半导体层104a及一N型半导体层104b，所述P型半导体层104a及N型半导体层104b层叠设置。所述半导体结构104包括一第一表面1042及一第二表面1044，第一表面1042和第二表面1044相对设置。请参见图2，所述第一表面1042可以为P型半导体层104a的表面，第二表面1044为N型半导体层104b的表面，此情况下，碳纳米管设置在P型半导体层104a的表面，透明导电膜106设置在N型半导体层104b的表面。在另外的实施例中，请参见图3，所述第一表面1042可以为N型半导体层104b的表面，第二表面1044为P型半导体层104a的表面，此情况下，碳纳米管设置在N型半导体层104b的表面，透明导电膜106设置在P型半导体层104a的表面。所述P型半导体层104a或N型半导体层104b的材料不限，可以为无机化合物半导体、元素半导体、有机半导体材料或这些材料掺杂后的材料。本实施例中，P型半导体层104a的材料为硒化钨(WSe2)，其厚度为6纳米，N型半导体层104b的材料为硫化钼(MoS2)，其厚度为2.6纳米，碳纳米管设置在N型半导体层104b的表面，透明导电膜106设置在P型半导体层104a的表面。
所述上电极106为一透明导电膜。所述透明导电膜的材料为导电材料，可以为金属、导电聚合物或ITO。透明导电膜直接沉积在半导体结构104的第二表面1044。透明导电膜沉积在半导体结构104的第一表面1044的具体方法不限，可以为离子溅射、磁控溅射或其他镀膜方法。所述透明导电膜的厚度不限，可以为5纳米～100微米。在一些实施例中，透明导电膜的厚度为5纳米～100纳米；在另一些实施例中，透明导电膜的厚度为5纳米～20纳米。所述透明导电膜的形状不限，可以为长条形、线性、方形等形状。本实施例中，所述透明导电膜的材料为金属，其形状为长条形。
所述背电极102、半导体结构104及上电极106相互层叠设置。具体的，所述碳纳米管、半导体结构104和透明导电膜相互层叠形成一多层立体结构110。由于碳纳米管相对于半导体结构104和透明导电膜的尺寸较小，该多层立体结构110的横截面的面积由碳纳米管的直径和长度决定。所述多层立体结构110定义一横向截面及一竖向截面，所述横向截面即平行于半导体结构104表面的方向的截面，所述纵向截面即垂直于半导体结构104的表面的方向的截面。所述横向截面的面积由碳纳米管102的直径和长度决定。所述纵向截面的面积由碳纳米管102的长度和多层立体结构110的厚度决定。由于碳纳米管102相对于半导体结构104和导电膜106的尺寸较小，该多层立体结构110的横向截面和纵向截面的面积均较小，多层立体结构110的体积也很小。优选地，该多层立体结构110的横截面的面积为0.25nm2～100000nm2。更优选地，该多层立体结构110的横截面的面积为1nm2～10000nm2。碳纳米管和透明导电膜与二维半导体结构104在多层立体结构110处形成范德华异质结构。在应用时，碳纳米管和透明导电膜可以看作设置在半导体结构104的两个相对表面上的电极，当在碳纳米管和透明导电膜上施加偏压实现导通时，电流的流动路径为穿过多层立体结构110的横截面，所述太阳能电池100的有效部分为多层立体结构110。所述太阳能电池100的整体尺寸只需确保大于多层立体结构110的体积即可，因此，太阳能电池100可以具有较小的尺寸，只需确保其包括多层立体结构110。所述太阳能电池100可以为一纳米级的太阳能电池。该太阳能电池具有纳米级的尺寸以及更高的集成度。
本发明的太阳能电池100为一基于碳纳米管不对称范德华异质结构(CCVH)，其中半导体结构为一二维结构，其被不对称地夹在碳纳米管和透明导电膜之间，半导体结构包括一P-N结，碳纳米管和透明导电膜分别作为P-N结的两个电极。由于碳纳米管特殊的几何形状和能带结构，使碳纳米管的费米能级更容易被栅极电压调制，因此，这种太阳能电池呈现出独特优异的性能。
请参见图4，本发明第二实施例提供一种太阳能电池200。所述太阳能电池200包括一第一电极202、一第二电极204、一绝缘层210、一栅极208及一太阳能电池单元206。所述太阳能电池单元206与第一实施例中的所提供的太阳能电池100的结构相同，在此不在重复描述。也就是说，与第一实施例所提供的太阳能电池100相比，本发明所提供的太阳能电池200进一步包括一第一电极202、一第二电极204、一绝缘层210及一栅极208。具体地，所述太阳能电池单元206通过绝缘层210与栅极208绝缘设置，所述第一电极202与背电极102电连接，所述第二电极204与上电极106电连接。所述栅极208通过所述绝缘层210与背电极102、半导体结构104、上电极106、第一电极202及第二电极204绝缘设置。
所述太阳能电池200中，栅极208与绝缘层210层叠设置，所述太阳能电池单元206设置在绝缘层210的表面，使绝缘层210位于栅极208和太阳能电池100之间。所述太阳能电池200中，背电极102即碳纳米管直接设置于绝缘层210的表面，半导体结构104设置于碳纳米管的上方，使碳纳米管位于半导体结构104和绝缘层210之间，上电极106即透明导电膜位于半导体结构104的上方。本发明中，碳纳米管直接设置在绝缘层210表面，碳纳米管靠近栅极208，栅极208可以控制太阳能电池单元206。另外，由于透明导电膜远离栅极208，透明导电膜不会在半导体结构104和栅极208产生屏蔽效应，以免太阳能电池200无法工作。本实施例中，碳纳米管设置在N型半导体层104b的表面，透明导电膜设置在P型半导体层104a的表面，P型半导体层104a为厚度为6纳米的WSe2，N型半导体层104b为厚度为2.6纳米的MoS2。
所述第一电极202和第二电极204均由导电材料组成，该导电材料可选择为金属、ITO、ATO、导电银胶、导电聚合物以及导电碳纳米管等。该金属材料可以为铝、铜、钨、钼、金、钛、钯或任意组合的合金。所述第一电极202和第二电极204也可以均为一层导电薄膜，该导电薄膜的厚度为2纳米-100微米。本实施例中，所述第一电极202、第二电极204为金属Au和Ti得到的金属复合结构，具体地，所述金属复合结构是由一层金属Au和一层金属Ti组成，Au设置在Ti的表面。所述金属Ti的厚度为5纳米，金属Au的厚度为5纳米。本实施例中，所述第一电极202与碳纳米管电连接，设置于碳纳米管的一端并贴合于碳纳米管的表面，其中，Ti层设置于碳纳米管表面，Au层设置于Ti层表面；所述第二电极204与透明导电膜电连接，并设置于透明导电膜的一端并贴合于透明导电膜的表面，其中，Ti层设置于透明导电膜表面，Au层设置于Ti层表面。
所述绝缘层210的材料为绝缘材料，其厚度为1纳米～100微米。绝缘层210使碳纳米管与栅极208间隔绝缘设置。本实施例中，绝缘层的材料为氧化硅。
所述栅极208由导电材料组成，该导电材料可选择为金属、ITO、ATO、导电银胶、导电聚合物以及导电碳纳米管等。该金属材料可以为铝、铜、钨、钼、金、钛、钯或任意组合的合金。本实施例中，所述栅极208为一层状结构，绝缘层210设置于栅极208的表面，所述第一电极202、第二电极204、以及太阳能电池100设置于绝缘层210上，并由栅极208和绝缘层210支撑。
本发明所提供的太阳能电池200在应用时，太阳光透过透明导电膜照射在半导体结构104上，由于半导体结构104与碳纳米管和透明导电膜形成范德华异质结构，可以产生光伏效应，将光能转化为电能。本发明所提供的太阳能电池200，由于碳纳米管作为背电极102，直接设置在绝缘层210上，与栅极208仅间隔一层绝缘层210，由于碳纳米管的特殊性能，可以通过栅极调节太阳能电池单元206中半导体结构104的工作性能，可以使由不同半导体材料构建太阳能电池200性能得到优化。
另外，本领域技术人员还可在本发明精神内做其他变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (10)

1.一种太阳能电池，其包括：
一半导体结构，所述半导体结构包括相互层叠设置的P型半导体层及N型半导体层，并定义一第一表面及与第一表面相对的第二表面；
一背电极设置于半导体结构的第一表面，所述背电极为一碳纳米管；
一透明导电膜，该透明导电膜通过沉积方法形成于所述半导体结构的第二表面，使半导体结构设置于碳纳米管和透明导电膜之间，碳纳米管、半导体结构与透明导电膜相互层叠形成一多层立体结构，所述透明导电膜为上电极。
2.如权利要求1所述的太阳能电池，其特征在于，所述碳纳米管为金属型碳纳米管。
3.如权利要求2所述的太阳能电池，其特征在于，所述碳纳米管为单壁碳纳米管。
4.如权利要求1所述的太阳能电池，其特征在于，所述多层立体结构的横截面面积在1nm2～10000nm2之间。
5.如权利要求1所述的太阳能电池，其特征在于，所述半导体层的厚度为1纳米～1000纳米。
6.如权利要求1所述的太阳能电池，其特征在于，所述透明导电膜的沉积方法包括离子溅射、磁控溅射或其它镀膜方法。
7.如权利要求1所述的太阳能电池，其特征在于，所述透明导电膜的厚度为5纳米～100纳米。
8.一种太阳能电池，该太阳能电池包括：
一栅极及一绝缘层，所述绝缘层设置于栅极的表面；
一半导体结构设置于绝缘层的表面，通过所述绝缘层与栅极绝缘设置，所述半导体结构包括一P型半导体层及一N型半导体层，并定义一第一表面及与第一表面相对的第二表面；
一背电极设置于半导体结构的第一表面，该背电极为一碳纳米管；
一上电极，该上电极为一透明导电膜，该透明导电膜通过沉积方法形成于所述半导体结构的第二表面，使半导体结构设置于碳纳米管和透明导电膜之间，碳纳米管、半导体结构与透明导电膜相互层叠形成一多层立体结构；
其中，所述第一电极与碳纳米管电连接，所述第二电极与透明导电膜电连接。
9.如权利要求8所述的太阳能电池，其特征在于，所述碳纳米管设置在绝缘层的表面，所述半导体结构覆盖碳纳米管设置在绝缘层的表面。
10.如权利要求8所述的太阳能电池，其特征在于，所述第一电极设置在碳纳米管的一端并贴合碳纳米管表面，所述第二电极设置在透明导电膜的一端并贴合透明导电膜的表面。
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CN112786755A (zh) * 2019-11-08 2021-05-11 清华大学 发光二极管
US11289615B2 (en) 2019-11-08 2022-03-29 Tsinghua University Semiconductor structure and semiconductor device using the same
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CN112786715B (zh) * 2019-11-08 2022-11-22 清华大学 太阳能电池
CN112786755B (zh) * 2019-11-08 2023-03-17 清华大学 发光二极管

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