JP6730367B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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- JP6730367B2 JP6730367B2 JP2018085025A JP2018085025A JP6730367B2 JP 6730367 B2 JP6730367 B2 JP 6730367B2 JP 2018085025 A JP2018085025 A JP 2018085025A JP 2018085025 A JP2018085025 A JP 2018085025A JP 6730367 B2 JP6730367 B2 JP 6730367B2
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- 239000004065 semiconductor Substances 0.000 claims description 114
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 48
- 239000002109 single walled nanotube Substances 0.000 claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 4
- 239000002905 metal composite material Substances 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 description 46
- 229910021393 carbon nanotube Inorganic materials 0.000 description 44
- 239000000463 material Substances 0.000 description 12
- 239000004020 conductor Substances 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910021404 metallic carbon Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
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Description
102 背面電極
104 半導体構造
104a P型半導体層
104b N型半導体層
106 前面電極
110 多層の立体構造
200 太陽電池
202 第一電極
204 第二電極
206 太陽電池ユニット
208 ゲート電極
210 絶縁層
Claims (5)
- 背面電極、半導体構造及び前面電極を含む太陽電池において、
前記半導体構造が積層して設置されるP型半導体層及びN型半導体層を含み、該半導体構造が第一表面及び該第一表面と対向して設置される第二表面を含み、
前記背面電極が前記半導体構造の第一表面に設置され、一つの単層カーボンナノチューブであり、
前記前面電極が透明導電フィルムであり、該透明導電フィルムが堆積する方法によって、前記半導体構造の第二表面に形成され、該半導体構造を前記単層カーボンナノチューブと前記透明導電フィルムとの間に設置させ、前記単層カーボンナノチューブ、前記半導体構造及び前記透明導電フィルムが積層して、多層の立体構造を形成し、
前記単層カーボンナノチューブが、第一の方向に沿って延在しており、
前記半導体構造の第二表面に前記透明導電フィルムを積層させたものが、前記単層カーボンナノチューブを跨いで、前記第一の方向と交差する第二の方向に沿って延在しており、
前記多層の立体構造の前記半導体構造の表面に平行する断面の面積は、一つの前記単層カーボンナノチューブの直径及び長さによって決まることを特徴とする太陽電池。 - 前記単層カーボンナノチューブが金属性の単層カーボンナノチューブであることを特徴とする、請求項1に記載の太陽電池。
- 前記多層の立体構造の前記半導体構造の表面に平行する断面の面積が1nm2〜1000nm2であることを特徴とする、請求項1に記載の太陽電池。
- 第一電極、第二電極、絶縁層、ゲート電極及び太陽電池ユニットを含む太陽電池において、
前記絶縁層が前記ゲート電極の表面に設置され、
前記太陽電池ユニットが背面電極、半導体構造及び前面電極を含み、
前記半導体構造が前記絶縁層の表面に設置され、前記絶縁層を通じて、前記ゲート電極と絶縁して設置され、前記半導体構造が積層して設置されるP型半導体層及びN型半導体層を含み、該半導体構造が第一表面及び該第一表面と対向して設置される第二表面を含み、
前記背面電極が前記半導体構造の第一表面に設置され、一つの単層カーボンナノチューブであり、
前記前面電極が透明導電フィルムであり、該透明導電フィルムが堆積する方法によって、前記半導体構造の第二表面に形成され、該半導体構造を前記単層カーボンナノチューブと前記透明導電フィルムとの間に設置させ、前記単層カーボンナノチューブ、前記半導体構造及び前記透明導電フィルムが積層して、多層の立体構造を形成し、
前記単層カーボンナノチューブが、前記絶縁層の表面上において第一の方向に沿って延在しており、
前記半導体構造の第二表面に前記透明導電フィルムを積層させたものが、前記絶縁層の表面上における前記単層カーボンナノチューブを跨いで、前記第一の方向と交差する第二の方向に沿って延在しており、
前記多層の立体構造の前記半導体構造の表面に平行する断面の面積は、一つの前記単層カーボンナノチューブの直径及び長さによって決まり、
前記第一電極が、前記単層カーボンナノチューブと電気的に接続され、前記単層カーボンナノチューブにおける前記第一の方向の一端に設置されており、
前記第二電極が、前記透明導電フィルムと電気的に接続され、前記透明導電フィルムにおける前記第二の方向の一端に設置されていることを特徴とする太陽電池。 - 前記第一電極及び前記第二電極は、金及びチタンからなる金属複合構造をなしており、
前記第一電極のチタン層が、前記単層カーボンナノチューブの表面に設置されるとともに、前記第一電極の金層が前記第一電極のチタン層の表面に設置され、
前記第二電極のチタン層が、前記透明導電フィルムの表面に設置されるとともに、前記第二電極の金層が前記第二電極のチタン層の表面に設置されている
ことを特徴とする請求項4に記載の太陽電池。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710374694.9 | 2017-05-24 | ||
CN201710374694.9A CN108963003B (zh) | 2017-05-24 | 2017-05-24 | 太阳能电池 |
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JP2018198313A JP2018198313A (ja) | 2018-12-13 |
JP6730367B2 true JP6730367B2 (ja) | 2020-07-29 |
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US (1) | US10600925B2 (ja) |
JP (1) | JP6730367B2 (ja) |
CN (1) | CN108963003B (ja) |
TW (1) | TWI656654B (ja) |
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