JP6736604B2 - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP6736604B2 JP6736604B2 JP2018085051A JP2018085051A JP6736604B2 JP 6736604 B2 JP6736604 B2 JP 6736604B2 JP 2018085051 A JP2018085051 A JP 2018085051A JP 2018085051 A JP2018085051 A JP 2018085051A JP 6736604 B2 JP6736604 B2 JP 6736604B2
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- 239000004065 semiconductor Substances 0.000 claims description 131
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 61
- 239000002041 carbon nanotube Substances 0.000 claims description 61
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 58
- 238000001514 detection method Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 5
- 239000002109 single walled nanotube Substances 0.000 claims description 4
- 229910021404 metallic carbon Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001940 conductive polymer Polymers 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000023077 detection of light stimulus Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
Description
100 半導体素子
102 カーボンナノチューブ
104 半導体構造
104a P型半導体層
104b N型半導体層
106 導電フィルム
110 多層の立体構造
202 第一電極
204 第二電極
208 第三電極
210 絶縁層
212 電流検出素子
Claims (6)
- 半導体素子、第一電極、第二電極及び電流検出素子を含む光検出器において、前記半導体素子、前記第一電極、前記第二電極及び前記電流検出素子が互いに電気的に接続されて、回路を形成し、
前記半導体素子は、半導体構造、一つのカーボンナノチューブ及び導電フィルムを含み、
前記半導体構造は積層して設置されるP型半導体層及びN型半導体層を含み、該半導体構造は第一表面及び該第一表面と対向して設置される第二表面を含み、
前記一つのカーボンナノチューブのみが前記半導体構造の第一表面に設置され、
前記導電フィルムは堆積する方法によって、前記半導体構造の第二表面に形成されて、該半導体構造を前記一つのカーボンナノチューブと前記導電フィルムとの間に設置させ、前記一つのカーボンナノチューブ、前記半導体構造及び前記導電フィルムが積層して、多層の立体構造を形成し、前記一つのカーボンナノチューブ及び前記導電フィルムと前記半導体構造との非対称的な接触が多層の立体構造にファンデルワールスナノヘテロ接合構造を形成し、
前記第一電極が前記一つのカーボンナノチューブと電気的に接続され、前記第二電極が前記導電フィルムと電気的に接続されることを特徴とする光検出器。 - 前記一つのカーボンナノチューブが金属性のカーボンナノチューブであることを特徴とする、請求項1に記載の光検出器。
- 前記多層の立体構造の半導体構造の表面に平行する断面の面積が1nm2〜10000nm2であることを特徴とする、請求項1に記載の光検出器。
- 前記半導体構造の厚さが1ナノメートル〜20000ナノメートルであることを特徴とする、請求項1に記載の光検出器。
- 更に、積層して設置される第三電極及び絶縁層を含み、前記半導体素子、前記第一電極及び前記第二電極が前記絶縁層の表面に設置され、前記第三電極が前記絶縁層を通じて、前記半導体素子、前記第一電極及び前記第二電極と絶縁して設置されることを特徴とする、請求項1に記載の光検出器。
- 前記一つのカーボンナノチューブは単層カーボンナノチューブであり、前記多層の立体構造の前記半導体構造の表面に平行する断面の面積は、一つの前記単層カーボンナノチューブの直径及び長さによって決まることを特徴とする、請求項1に記載の光検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710374706.8A CN108933182B (zh) | 2017-05-24 | 2017-05-24 | 光探测器 |
CN201710374706.8 | 2017-05-24 |
Publications (2)
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JP2018198314A JP2018198314A (ja) | 2018-12-13 |
JP6736604B2 true JP6736604B2 (ja) | 2020-08-05 |
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JP2018085051A Active JP6736604B2 (ja) | 2017-05-24 | 2018-04-26 | 光検出器 |
Country Status (4)
Country | Link |
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US (1) | US10847737B2 (ja) |
JP (1) | JP6736604B2 (ja) |
CN (1) | CN108933182B (ja) |
TW (1) | TWI653749B (ja) |
Families Citing this family (4)
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CN112786755B (zh) * | 2019-11-08 | 2023-03-17 | 清华大学 | 发光二极管 |
CN112786714B (zh) * | 2019-11-08 | 2022-11-22 | 清华大学 | 光电探测器 |
CN112786678B (zh) | 2019-11-08 | 2022-11-22 | 清华大学 | 半导体结构及半导体器件 |
CN112786715B (zh) * | 2019-11-08 | 2022-11-22 | 清华大学 | 太阳能电池 |
Family Cites Families (22)
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JPS56165367A (en) * | 1980-05-23 | 1981-12-18 | Minolta Camera Co Ltd | Semiconductor photoelectric convertor |
JP4170701B2 (ja) | 2002-07-31 | 2008-10-22 | 信越半導体株式会社 | 太陽電池及びその製造方法 |
JP2008055375A (ja) | 2006-09-01 | 2008-03-13 | Osaka Univ | 単層カーボンナノチューブの分離方法 |
CA2670073A1 (en) * | 2006-11-17 | 2008-11-06 | The Trustees Of Boston College | Nanoscale sensors |
CN101627479B (zh) | 2007-01-30 | 2011-06-15 | 索拉斯特公司 | 光电池及其制造方法 |
US20080237682A1 (en) * | 2007-03-26 | 2008-10-02 | Kuo-Ching Chiang | Semiconductor memory with conductive carbon |
US8431818B2 (en) * | 2007-05-08 | 2013-04-30 | Vanguard Solar, Inc. | Solar cells and photodetectors with semiconducting nanostructures |
CN101562203B (zh) | 2008-04-18 | 2014-07-09 | 清华大学 | 太阳能电池 |
TWI450402B (zh) | 2008-05-02 | 2014-08-21 | Hon Hai Prec Ind Co Ltd | 太陽能電池 |
JP2010093118A (ja) | 2008-10-09 | 2010-04-22 | Sony Corp | 受光素子および受光装置 |
WO2010062644A2 (en) | 2008-10-28 | 2010-06-03 | The Regents Of The University Of California | Vertical group iii-v nanowires on si, heterostructures, flexible arrays and fabrication |
EP2432027A4 (en) | 2009-04-30 | 2017-06-28 | Industry-University Cooperation Foundation Hanyang University | Silicon solar cell comprising a carbon nanotube layer |
CN101667611B (zh) | 2009-09-15 | 2011-07-20 | 上海交通大学 | 基于定向碳纳米管的太阳能微电池制备方法 |
JP5288640B2 (ja) * | 2010-03-31 | 2013-09-11 | 富士フイルム株式会社 | 撮像素子及びその製造方法 |
CN103968949B (zh) * | 2013-02-04 | 2016-04-27 | 清华大学 | 偏振光检测系统 |
CN103219403B (zh) * | 2013-04-19 | 2016-06-08 | 苏州大学 | 基于二维层状原子晶体材料的光探测器 |
CN103474474B (zh) * | 2013-09-16 | 2016-08-17 | 北京京东方光电科技有限公司 | Tft及其制作方法、阵列基板及其制作方法、x射线探测器 |
CN105097428B (zh) * | 2014-04-24 | 2017-12-01 | 清华大学 | 碳纳米管复合膜 |
JPWO2017081831A1 (ja) * | 2015-11-12 | 2017-11-09 | パナソニックIpマネジメント株式会社 | 光センサ |
CN205376554U (zh) | 2015-12-01 | 2016-07-06 | 傲迪特半导体(南京)有限公司 | 一种硅光电二极管 |
CN105489694A (zh) | 2016-01-14 | 2016-04-13 | 中国石油大学(华东) | 氧化锌/硅p-n异质结紫外光探测器及其制备方法 |
US10312444B2 (en) * | 2016-10-06 | 2019-06-04 | International Business Machines Corporation | Organic semiconductors with dithienofuran core monomers |
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2017
- 2017-05-24 CN CN201710374706.8A patent/CN108933182B/zh active Active
- 2017-06-29 TW TW106121849A patent/TWI653749B/zh active
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2018
- 2018-03-09 US US15/916,418 patent/US10847737B2/en active Active
- 2018-04-26 JP JP2018085051A patent/JP6736604B2/ja active Active
Also Published As
Publication number | Publication date |
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US10847737B2 (en) | 2020-11-24 |
CN108933182A (zh) | 2018-12-04 |
JP2018198314A (ja) | 2018-12-13 |
US20180342690A1 (en) | 2018-11-29 |
TWI653749B (zh) | 2019-03-11 |
TW201901937A (zh) | 2019-01-01 |
CN108933182B (zh) | 2020-05-15 |
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