TW201829808A - 用以測量一沈積率之測量組件、蒸發源、沈積設備、及用於其之方法 - Google Patents

用以測量一沈積率之測量組件、蒸發源、沈積設備、及用於其之方法 Download PDF

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Publication number
TW201829808A
TW201829808A TW106135553A TW106135553A TW201829808A TW 201829808 A TW201829808 A TW 201829808A TW 106135553 A TW106135553 A TW 106135553A TW 106135553 A TW106135553 A TW 106135553A TW 201829808 A TW201829808 A TW 201829808A
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TW
Taiwan
Prior art keywords
hole
oscillating crystal
measuring
measurement
movable shutter
Prior art date
Application number
TW106135553A
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English (en)
Chinese (zh)
Inventor
喬斯曼紐 地古坎柏
史丹分 班格特
佑維 史奇伯勒
海格 藍德葛瑞夫
安德率斯 露博
漢斯 史戴夫
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201829808A publication Critical patent/TW201829808A/zh

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/063Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
    • G01B7/066Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
TW106135553A 2016-10-25 2017-10-17 用以測量一沈積率之測量組件、蒸發源、沈積設備、及用於其之方法 TW201829808A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/EP2016/075681 2016-10-25
PCT/EP2016/075681 WO2018077388A1 (en) 2016-10-25 2016-10-25 Measurement assembly for measuring a deposition rate, evaporation source, deposition apparatus, and method therefor

Publications (1)

Publication Number Publication Date
TW201829808A true TW201829808A (zh) 2018-08-16

Family

ID=57208279

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106135553A TW201829808A (zh) 2016-10-25 2017-10-17 用以測量一沈積率之測量組件、蒸發源、沈積設備、及用於其之方法

Country Status (5)

Country Link
JP (1) JP2018538429A (ko)
KR (1) KR20180067463A (ko)
CN (1) CN108291291A (ko)
TW (1) TW201829808A (ko)
WO (1) WO2018077388A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759913B (zh) * 2020-10-16 2022-04-01 天虹科技股份有限公司 原子層沉積薄膜厚度的檢測系統及檢測方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019063061A1 (en) * 2017-09-26 2019-04-04 Applied Materials, Inc. MATERIAL DEPOSITION ARRANGEMENT, VACUUM DEPOSITION SYSTEM, AND ASSOCIATED METHODS
WO2020108743A1 (en) * 2018-11-28 2020-06-04 Applied Materials, Inc. Deposition source for depositing evaporated material, deposition apparatus, and methods therefor
CN114423881A (zh) * 2019-09-19 2022-04-29 应用材料公司 蒸发源、遮板装置和蒸发方法
DE102019128515A1 (de) * 2019-10-22 2021-04-22 Apeva Se Verfahren zum Betrieb eines QCM-Sensors
CN113278918B (zh) * 2021-05-19 2023-01-31 云谷(固安)科技有限公司 掩膜装置及蒸镀方法

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CH537987A (de) * 1971-02-10 1973-06-15 Balzers Patent Beteilig Ag Einrichtung zur Überwachung der Aufdampfung beim Vakuumaufdampfen von dünnen Schichten
JPH07257994A (ja) * 1994-03-18 1995-10-09 Matsushita Electric Ind Co Ltd Mbe装置
JP4785269B2 (ja) * 2000-05-02 2011-10-05 株式会社半導体エネルギー研究所 発光装置の作製方法及び成膜装置のクリーニング方法
US6558735B2 (en) * 2001-04-20 2003-05-06 Eastman Kodak Company Reusable mass-sensor in manufacture of organic light-emitting devices
US20080241367A1 (en) * 2007-03-29 2008-10-02 Intevac Corporation Apparatus for and method of applying lubricant coatings to magnetic disks via a vapor flow path including a selectively opened and closed shutter
US20080241366A1 (en) * 2007-03-29 2008-10-02 Intevac Corporation Apparatus for and method of applying lubricant coatings to magnetic disks via a vapor flow path including a selectively opened and closed shutter
JP2012126938A (ja) * 2010-12-14 2012-07-05 Ulvac Japan Ltd 真空蒸着装置及び薄膜の製造方法
JP2015117397A (ja) * 2013-12-17 2015-06-25 株式会社日立ハイテクファインシステムズ 蒸着装置
DE102014102484A1 (de) * 2014-02-26 2015-08-27 Aixtron Se Verwendung eines QCM-Sensors zur Bestimmung der Dampfkonzentration beim OVPD-Verfahren beziehungsweise in einem OVPD-Beschichtungssystem
CN104165573B (zh) * 2014-05-13 2016-05-11 京东方科技集团股份有限公司 一种测量装置及镀膜设备
JP6448279B2 (ja) * 2014-09-30 2019-01-09 キヤノントッキ株式会社 真空蒸着装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI759913B (zh) * 2020-10-16 2022-04-01 天虹科技股份有限公司 原子層沉積薄膜厚度的檢測系統及檢測方法

Also Published As

Publication number Publication date
CN108291291A (zh) 2018-07-17
WO2018077388A1 (en) 2018-05-03
KR20180067463A (ko) 2018-06-20
JP2018538429A (ja) 2018-12-27

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