TW201829808A - Measurement assembly for measuring a deposition rate, evaporation source, deposition apparatus, and method therefor - Google Patents
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- 238000005259 measurement Methods 0.000 title claims abstract description 161
- 230000008021 deposition Effects 0.000 title claims abstract description 99
- 238000001704 evaporation Methods 0.000 title claims description 95
- 230000008020 evaporation Effects 0.000 title claims description 90
- 238000000034 method Methods 0.000 title claims description 26
- 239000013078 crystal Substances 0.000 claims abstract description 149
- 239000000463 material Substances 0.000 claims abstract description 134
- 230000000903 blocking effect Effects 0.000 claims abstract description 5
- 238000009826 distribution Methods 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 36
- 239000011364 vaporized material Substances 0.000 claims description 16
- 239000012530 fluid Substances 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 description 86
- 238000010438 heat treatment Methods 0.000 description 48
- 239000011368 organic material Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
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- 230000008569 process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
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- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003380 quartz crystal microbalance Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/063—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
- G01B7/066—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
本揭露是有關於一種用以測量ㄧ已蒸發材料之一沈積率之測量組件,一種用以材料之蒸發之蒸發源,一種用以供應材料於一基板之沈積設備,及一種用以測量一已蒸發材料之一沈積率之方法。本揭露特別是有關於一種用以測量一已蒸發有機材料之測量組件及一種用於其之方法。再者,本揭露特別是有關於數種包括有機材料於其中之裝置,此些裝置舉例為一種蒸發源及一種用於有機材料之沈積設備。The present disclosure relates to a measuring assembly for measuring the deposition rate of a vaporized material, an evaporation source for evaporation of a material, a deposition device for supplying material to a substrate, and a measuring device A method of depositing a rate of evaporation of a material. The present disclosure relates in particular to a measuring assembly for measuring an evaporated organic material and a method therefor. Furthermore, the present disclosure relates in particular to several devices including organic materials therein, such as an evaporation source and a deposition apparatus for organic materials.
有機蒸發器係為用於製造 有機發光二極體(organic light-emitting diodes,OLED)的工具。OLEDs係為發光二極體之一種特別形式。在OLEDs中,發光層包括特定之有機化合物的薄膜。OLEDs係使用來製造用以顯示資訊之電視螢幕、電腦螢幕、行動電話、其他手持裝置等。OLEDs可亦使用來作為一般空間照明之用。OLED顯示器之可行的顏色、亮度、及視角的範圍係大於傳統之液晶顯示器(LCD)的此些特性,因為OLED像素係直接地發光且不包含背光。因此,相較於傳統之LCD之能量損耗,OLED顯示器之能量損耗係相當地少。再者,可製造於撓性基板上之OLEDs係產生其他的應用。Organic vaporizers are tools for the manufacture of organic light-emitting diodes (OLEDs). OLEDs are a special form of light-emitting diodes. In OLEDs, the luminescent layer comprises a film of a specific organic compound. OLEDs are used to create television screens, computer screens, mobile phones, other handheld devices, etc. for displaying information. OLEDs can also be used as general space lighting. The range of possible colors, brightness, and viewing angles of OLED displays is greater than such characteristics of conventional liquid crystal displays (LCDs) because OLED pixels are directly illuminated and do not include a backlight. Therefore, the energy loss of an OLED display is considerably less than that of a conventional LCD. Furthermore, OLEDs that can be fabricated on flexible substrates produce other applications.
OLED之功能係取決於有機材料之塗層厚度。此厚度必須在預定範圍中。在OLEDs之製造中,受影響之具有有機材料之塗層的沈積率係控制,以落在預定之公差範圍中。也就是說,有機蒸發器之沈積率必須在製程中充分地控制。The function of the OLED depends on the coating thickness of the organic material. This thickness must be in the predetermined range. In the manufacture of OLEDs, the deposition rate of the affected coating with organic material is controlled to fall within predetermined tolerances. That is to say, the deposition rate of the organic vaporizer must be sufficiently controlled in the process.
因此,對於OLED應用及對於其他蒸發製程來說,在比較長時間內係需要高準確性的沈積率。現有數個可行的測量系統,用以測量蒸發器之沈積率。然而,此些測量系統在所需之時間區間中面臨準確性不足及/或穩定性不足的情況。Therefore, for OLED applications and for other evaporation processes, a high accuracy deposition rate is required for a relatively long period of time. There are several possible measurement systems available to measure the deposition rate of the evaporator. However, such measurement systems face insufficient accuracy and/or insufficient stability in the required time interval.
因此,提供改良之沈積率測量系統、沈積率控制方法、蒸發器及沈積設備係有持續的需求。Accordingly, there is a continuing need to provide improved deposition rate measurement systems, deposition rate control methods, evaporators, and deposition equipment.
有鑑於上述,根據獨立申請專利範圍之一種用以測量ㄧ已蒸發材料之一沈積率之測量組件、一種蒸發源、一種沈積設備、及一種用以測量一已蒸發材料之一沈積率之方法係提供。In view of the above, a measuring component for measuring a deposition rate of a vaporized material, an evaporation source, a deposition apparatus, and a method for measuring a deposition rate of an evaporated material according to the scope of the independent patent application provide.
根據本揭露之一方面,提出一種用以測量一已蒸發材料之一沈積率之測量組件。測量組件包括一第一振盪晶體,用以測量沈積率;一第二振盪晶體,用以測量沈積率;以及一可移動遮門。可移動遮門係裝配以用於阻擋來自一第一測量出口提供之已蒸發材料,第ㄧ測量出口係導向而用以提供已蒸發材料至第一振盪晶體。再者,可移動遮門係裝配用於阻擋來自一第二測量出口提供之已蒸發材料,第二測量出口係導向而用以提供已蒸發材料至第二振盪晶體。In accordance with one aspect of the present disclosure, a measurement assembly for measuring the deposition rate of a vaporized material is presented. The measuring assembly includes a first oscillating crystal for measuring a deposition rate, a second oscillating crystal for measuring a deposition rate, and a movable shutter. The movable shutter system is configured to block the evaporated material supplied from a first measurement outlet, and the second measurement outlet is guided to provide the evaporated material to the first oscillating crystal. Further, the movable shutter system is configured to block the evaporated material supplied from a second measurement outlet, and the second measurement outlet is directed to provide the evaporated material to the second oscillation crystal.
根據本揭露之另一方面,提出一種用於材料之蒸發之蒸發源。蒸發源包括一蒸發坩鍋,其中蒸發坩鍋係裝配以蒸發一材料;一分佈組件,具有一或多個出口,用於提供已蒸發材料。分佈組件係流體連通於蒸發坩鍋。再者,蒸發源包括如此處所述任何實施例之一測量組件。According to another aspect of the present disclosure, an evaporation source for evaporation of a material is proposed. The evaporation source includes an evaporation crucible in which the evaporation crucible is assembled to evaporate a material; a distribution assembly having one or more outlets for providing vaporized material. The distribution component is in fluid communication with the evaporation crucible. Further, the evaporation source comprises a measurement assembly as in any of the embodiments described herein.
根據本揭露之其他方面,提出一種沈積設備,用以於一真空腔室中以一沈積率提供材料至一基板。沈積設備包括如此處所述任何實施例之至少一蒸發源。In accordance with other aspects of the present disclosure, a deposition apparatus is proposed for providing material to a substrate at a deposition rate in a vacuum chamber. The deposition apparatus includes at least one evaporation source of any of the embodiments described herein.
根據本揭露之另一方面, 提出一種用以測量一已蒸發材料之一沈積率之方法。此方法包括蒸發一材料;供應已蒸發材料之一第一部份至一基板;轉向已蒸發材料之一第二部份至一第一振盪晶體及/或一第二振盪晶體;以及藉由使用如此處所述任何實施例之測量組件測量沈積率。In accordance with another aspect of the present disclosure, a method for measuring the deposition rate of a vaporized material is presented. The method includes evaporating a material; supplying a first portion of the evaporated material to a substrate; turning a second portion of the evaporated material to a first oscillating crystal and/or a second oscillating crystal; and by using The measurement assembly of any of the embodiments described herein measures the deposition rate.
其他優點、特徵、方面及細節係透過附屬申請專利範圍、說明及圖式更加清楚。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:Other advantages, features, aspects and details will become apparent from the scope of the patent application, the description and the drawings. In order to better understand the above and other aspects of the present invention, the following detailed description of the embodiments and the accompanying drawings
詳細的參照將以本揭露之數種實施例來達成,本揭露之數種實施例的一或多個例子係繪示於圖式中。在下方圖式之說明中,相同參考編號係意指相同元件。在下文中,一般僅有有關於個別實施例之相異處係進行說明。各例子係藉由說明本揭露的方式提供且不意味為本揭露之一限制。再者,所說明或敘述而做為一實施例之部份之特徵可用於其他實施例或與其他實施例結合,以取得再其他實施例。此意指本說明包括此些調整及變化。The detailed description is to be understood by the embodiments of the present disclosure, and one or more examples of several embodiments of the present disclosure are illustrated in the drawings. In the description of the following figures, the same reference numerals are intended to refer to the same elements. In the following, there will generally be only a description of the differences between the individual embodiments. The examples are provided by way of illustration of the disclosure and are not intended to be limiting. Furthermore, the features illustrated or described as part of one embodiment can be used in other embodiments or in combination with other embodiments to achieve further embodiments. This means that the description includes such adjustments and changes.
在本揭露之數種實施例係更詳細說明之前,有關於此處使用之一些名稱之數個方面係進行解說。Before the several embodiments of the present disclosure are described in more detail, several aspects of the names used herein are explained.
在本揭露中,「用以測量沈積率之振盪晶體」可理解為,藉由測量振盪晶體諧振器之頻率的改變,用以測量在每個單位面積之振盪晶體上的已沈積材料之質量變化的一種振盪晶體。特別是,在本揭露中,振盪晶體可理解為石英晶體諧振器(quartz crystal resonator)。更特別是,「用以測量沈積率之振盪晶體」可理解為石英晶體微天秤(quartz crystal microbalance,QCM)。In the present disclosure, "the oscillating crystal for measuring the deposition rate" can be understood as measuring the change in the mass of the deposited material on the oscillating crystal per unit area by measuring the change in the frequency of the oscillating crystal resonator. An oscillating crystal. In particular, in the present disclosure, an oscillating crystal can be understood as a quartz crystal resonator. More specifically, "the oscillating crystal used to measure the deposition rate" can be understood as a quartz crystal microbalance (QCM).
於本揭露中,「可移動遮門(movable shutter)」可理解為配置於測量組件及測量出口之間的可移動元件。測量出口用以提供已蒸發材料至測量組件。特別是,「可移動遮門」可理解為裝配以於測量組件及測量出口之間之空間中移動的元件。舉例來說,可移動遮門可裝配以沿著橫向方向為可移動的。根據另一例子,可移動遮門可裝配以為可旋轉的。一般來說,於可移動遮門之第一狀態中,可移動遮門係裝配以用於阻擋經由測量出口提供之已蒸發材料之流動。於可移動遮門之第二狀態中,可移動遮門係裝配以用於開放(unblocking)經由測量出口提供之已蒸發材料之流動。因此,可移動遮門係裝配以用於控制已蒸發材料至測量組件之一出入口。In the present disclosure, a "movable shutter" is understood to mean a movable element disposed between a measuring component and a measuring outlet. The measurement outlet is used to provide the evaporated material to the measurement assembly. In particular, "movable shutter" is understood to mean an element that is assembled to move in the space between the measuring assembly and the measuring outlet. For example, the movable shutter can be assembled to be movable in a lateral direction. According to another example, the movable shutter can be assembled to be rotatable. Generally, in the first state of the movable shutter, the movable shutter assembly is configured to block the flow of evaporated material provided via the measurement outlet. In the second state of the movable shutter, the movable shutter system is assembled for unblocking the flow of evaporated material provided via the measurement outlet. Therefore, the movable shutter system is assembled for controlling the evaporated material to one of the inlet and outlet of the measuring assembly.
於本揭露中,「用以材料之蒸發之蒸發源」可理解為一種裝配以用於提供將沈積於基板上之材料的配置。特別是,蒸發源可裝配以用於在真空腔室中提供將沈積於基板上之材料,真空腔室例如是真空沈積設備之真空沈積腔室。根據一些實施例,蒸發源可包括蒸發器或坩鍋以及分佈組件。蒸發器或坩鍋係蒸發將沈積於基板上之材料。分佈組件舉例為分佈管或一或多個點源,可沿著垂直軸配置。舉例來說,分佈組件可裝配以在朝向基板之一方向中舉例為經由出口或噴嘴釋放已蒸發材料。In the present disclosure, "evaporation source for evaporation of material" is understood to be a configuration that is assembled to provide a material to be deposited on a substrate. In particular, the evaporation source can be configured to provide a material to be deposited on the substrate in a vacuum chamber, such as a vacuum deposition chamber of a vacuum deposition apparatus. According to some embodiments, the evaporation source may include an evaporator or crucible and a distribution assembly. The evaporator or crucible evaporates the material that will be deposited on the substrate. The distribution component is exemplified by a distribution tube or one or more point sources that can be configured along a vertical axis. For example, the distribution assembly can be assembled to release the evaporated material via an outlet or nozzle, for example, in one direction toward the substrate.
在本揭露中,「坩鍋」可理解為一種提供或包含將沈積之材料之裝置或儲器。一般來說,坩鍋可加熱,用以蒸發將沈積於基板上之材料。坩鍋可處於流體連通於分佈組件之狀態,由坩鍋蒸發之材料可傳送至分佈組件。於一例子中,坩鍋可為用以蒸發有機材料之坩鍋,有機材料舉例為具有約100°C至約600°C 之蒸發溫度之有機材料。In the present disclosure, "shabu" is understood to mean a device or reservoir that provides or contains material to be deposited. Generally, the crucible can be heated to evaporate the material to be deposited on the substrate. The crucible can be in fluid communication with the distribution assembly and the material evaporated by the crucible can be transferred to the distribution assembly. In one example, the crucible may be a crucible for evaporating organic material, and the organic material is exemplified by an organic material having an evaporation temperature of about 100 ° C to about 600 ° C.
於本揭露中,名稱「流體連通」可理解為流體連通之兩個元件可經由連接件交換流體,以讓流體於兩個元件之間流動。於一例子中,流體連通之元件可包括中空結構,流體可經由中空結構流動。根據一些實施例,流體連通之至少一元件可為管狀元件。In the present disclosure, the term "fluid communication" is understood to mean that two elements in fluid communication can exchange fluid via a connector to allow fluid to flow between the two elements. In one example, the fluidly communicating element can include a hollow structure through which fluid can flow. According to some embodiments, at least one element in fluid communication may be a tubular element.
於本揭露中,「分佈組件」可理解為用以導引及分佈已蒸發材料之分佈管,或為可沿著垂直軸配置之一或多個點源。特別是,分佈管或此一或多個點源可裝配,以用於在分佈管或此一或多個點源中提供從蒸發器至出口(例如是噴嘴或開孔)之已蒸發材料。舉例來說,在分佈組件為分佈管之形式之情況中,分佈管可為線性分佈管,在縱向方向中延伸。舉例來說,分佈管可包括具有圓柱之形狀之管,其中圓柱可具有圓形、三角形或類似方形之底部形狀或可為任何其他適合之底部形狀。In the present disclosure, a "distribution component" is understood to mean a distribution tube for guiding and distributing evaporated material, or one or more point sources that can be arranged along a vertical axis. In particular, the distribution tube or the one or more point sources can be assembled for providing vaporized material from the evaporator to the outlet (eg, a nozzle or opening) in the distribution tube or the one or more point sources. For example, where the distribution component is in the form of a distribution tube, the distribution tube can be a linear distribution tube that extends in the longitudinal direction. For example, the distribution tube can comprise a tube having the shape of a cylinder, wherein the cylinder can have a round, triangular or square-like bottom shape or can be any other suitable bottom shape.
範例性參照第1A至1C圖,根據此處所述實施例之用以測量已蒸發材料之沈積率之測量組件100包括第一振盪晶體110、第二振盪晶體120、及可移動遮門140。第一振盪晶體110用以測量沈積率,第二振盪晶體120用以測量沈積率。可移動遮門140係裝配以用於阻擋來自第一測量出口151提供之已蒸發材料,第一測量出口151用以提供已蒸發材料至第一振盪晶體110。特別是,第一測量出口151係導向而用於提供已蒸發材料至第一振盪晶體110。再者,可移動遮門140係裝配以用於阻擋來自第二測量出口152提供之已蒸發材料。特別是,第二測量出口152係導向而用於提供已蒸發材料至第二振盪晶體120。Illustratively with reference to Figures 1A through 1C, the measurement assembly 100 for measuring the deposition rate of evaporated material in accordance with embodiments described herein includes a first oscillating crystal 110, a second oscillating crystal 120, and a movable shutter 140. The first oscillating crystal 110 is used to measure the deposition rate, and the second oscillating crystal 120 is used to measure the deposition rate. The movable shutter 140 is assembled to block the evaporated material supplied from the first measurement outlet 151, and the first measurement outlet 151 is used to supply the evaporated material to the first oscillating crystal 110. In particular, the first measurement outlet 151 is oriented for providing the evaporated material to the first oscillating crystal 110. Further, the movable shutter 140 is assembled to block the evaporated material provided from the second measurement outlet 152. In particular, the second measurement outlet 152 is directed to provide the evaporated material to the second oscillating crystal 120.
特別是,第1A圖繪示在第一狀態中之測量組件之示意圖。在第一狀態中,第二測量出口152係由可移動遮門140阻擋,使得經由第二測量出口152至第二振盪晶體120提供之已蒸發材料之出入口係阻擋。再者,如第1A圖中範例性所示,測量組件可裝配,使得經由第一測量出口151至第一振盪晶體110提供之已蒸發材料之出入口係提供,而第二測量出口152係阻擋。因此,當第二振盪晶體120可進行清洗時,沈積率可由第一振盪晶體110測量。舉例來說,第二振盪晶體120可藉由加熱來進行清洗,特別是藉由提供對應於沈積於第二振盪晶體120上之已蒸發材料之蒸發溫度之加熱溫度。舉例來說,加熱溫度可藉由加熱元件提供。加熱元件設置於可移動遮門140中及/或加熱元件設置於用於第二振盪晶體120之支承件中。In particular, Figure 1A shows a schematic diagram of a measurement assembly in a first state. In the first state, the second measurement outlet 152 is blocked by the movable shutter 140 such that the inlet and outlet of the vaporized material provided via the second measurement outlet 152 to the second oscillating crystal 120 is blocked. Again, as exemplarily shown in FIG. 1A, the measurement assembly can be assembled such that the inlet and outlet of the vaporized material provided via the first measurement outlet 151 to the first oscillating crystal 110 is provided, while the second measurement outlet 152 is blocked. Therefore, when the second oscillating crystal 120 can be cleaned, the deposition rate can be measured by the first oscillating crystal 110. For example, the second oscillating crystal 120 can be cleaned by heating, particularly by providing a heating temperature corresponding to the evaporation temperature of the evaporated material deposited on the second oscillating crystal 120. For example, the heating temperature can be provided by a heating element. The heating element is disposed in the movable shutter 140 and/or the heating element is disposed in the support for the second oscillating crystal 120.
第1B圖繪示測量組件之第二狀態之示意圖。在第二狀態中,可移動遮門140係已經移動到一位置,在此位置中,第一測量出口151及第二測量出口152係開啟來用以提供已蒸發材料至第一振盪晶體110及第二振盪晶體120兩者之已蒸發材料之出入口。因此,第一振盪晶體110及第二振盪晶體120可應用來測量沈積率,使得多餘之測量可執行。FIG. 1B is a schematic diagram showing a second state of the measuring component. In the second state, the movable shutter 140 has been moved to a position in which the first measurement outlet 151 and the second measurement outlet 152 are opened to provide the evaporated material to the first oscillating crystal 110 and The entrance and exit of the evaporated material of both of the second oscillating crystals 120. Therefore, the first oscillating crystal 110 and the second oscillating crystal 120 can be applied to measure the deposition rate so that redundant measurements can be performed.
於第1C圖中,測量組件之第三狀態係繪示。在第三狀態中,可移動遮門140已經移動至一位置,在此位置中,經由第一測量出口151至第一振盪晶體110提供之已蒸發材料之出入口係阻擋。因此,如第1C圖中範例性所示,當第一振盪晶體110可進行清洗時,沈積率可由第二振盪晶體120測量。舉例來說,第一振盪晶體110可藉由加熱來進行清洗,特別是藉由提供對應於沈積於第一振盪晶體110上之已蒸發材料之蒸發溫度之加熱溫度。舉例來說,加熱溫度可藉由加熱元件提供。加熱元件設置於可移動遮門140中及/或加熱元件設置於用於第一振盪晶體110之支承件中。In Figure 1C, the third state of the measurement assembly is depicted. In the third state, the movable shutter 140 has moved to a position in which the entrance and exit of the evaporated material provided via the first measurement outlet 151 to the first oscillating crystal 110 is blocked. Therefore, as exemplarily shown in FIG. 1C, when the first oscillating crystal 110 can be cleaned, the deposition rate can be measured by the second oscillating crystal 120. For example, the first oscillating crystal 110 can be cleaned by heating, particularly by providing a heating temperature corresponding to the evaporation temperature of the evaporated material deposited on the first oscillating crystal 110. For example, the heating temperature can be provided by a heating element. The heating element is disposed in the movable shutter 140 and/or the heating element is disposed in the support for the first oscillating crystal 110.
根據可與此處所述任何其他實施例結合之數個實施例,可移動遮門可連接於驅動器。驅動器舉例為線性驅動器,裝配以用於提供可移動遮門之平移運動,由第1A及1C圖中之可移動遮門140上之箭頭所範例性繪示。特別是,驅動器可裝配以用於移動可移動遮門於第一測量出口阻擋之狀態及第二測量出口阻擋之第二狀態之間。因此,參照第1A至1C圖範例性所示,將理解的是,驅動器可裝配以用於線性橫向交替運動,用以阻擋/開放第一測量出口及第二測量出口。According to several embodiments, which can be combined with any of the other embodiments described herein, the movable shutter can be attached to the drive. The actuator is exemplified by a linear actuator that is assembled for providing a translational movement of the movable shutter, as exemplarily illustrated by the arrows on the movable shutter 140 in Figures 1A and 1C. In particular, the driver can be configured to move the movable shutter between the first measurement outlet blocking state and the second measurement outlet blocking second state. Thus, with reference to the exemplary illustrations of Figures 1A through 1C, it will be understood that the driver can be configured for linear lateral alternating motion to block/open the first measurement outlet and the second measurement outlet.
因此,如此處所述之測量組件係提供用於連續地測量已蒸發材料之沈積率之可能性。特別是,藉由提供沈積率可由第一振盪晶體測量而第二振盪晶體可同時進行清洗之測量組件,改善之測量組件係提供。舉例來說,既然第一振盪晶體及第二振盪晶體可以交替方式進行清洗,已沈積材料對沈積率測量之準確性之負面效應可減少或甚至消除。再者,如此處所述之測量組件係提供處理多餘沈積率測量之可能性。舉例來說,在第一測量出口及第二測量出口係開啟之測量組件之狀態中,也就是經由第一測量出口及第二測量出口提供之已蒸發材料之出入口係提供至第一振盪晶體及第二振盪晶體,兩個振盪晶體可使用於沈積率測量,而有利於增加測量準確性。Thus, the measurement assembly as described herein provides the possibility to continuously measure the deposition rate of the evaporated material. In particular, an improved measurement component is provided by providing a measurement component in which the deposition rate can be measured by the first oscillating crystal and the second oscillating crystal can be simultaneously cleaned. For example, since the first oscillating crystal and the second oscillating crystal can be cleaned in an alternating manner, the negative effect of the deposited material on the accuracy of the deposition rate measurement can be reduced or even eliminated. Again, the measurement components as described herein provide the possibility to process excess deposition rate measurements. For example, in the state of the measurement component in which the first measurement outlet and the second measurement outlet are opened, that is, the inlet and outlet of the evaporated material supplied through the first measurement outlet and the second measurement outlet are supplied to the first oscillation crystal and The second oscillating crystal, which can be used for deposition rate measurement, is advantageous for increasing measurement accuracy.
範例性參照第2A至2D圖,根據其他實施例之用以測量已沈積材料之沈積率的測量組件100係說明。根據可與此處所述任何其他實施例結合之數個實施例,可移動遮門140可為可轉動元件,具有至少一孔160。此至少一孔160可裝配以用於在可旋轉元件係為第一狀態中時,提供從第一測量出口至第一振盪晶體110之已蒸發材料之出入,如第2A圖中範例性所示。舉例來說,可旋轉元件可為可旋轉碟片,具有實質上圓形之形狀,如第2A至2D圖中範例性所示。或者,可旋轉元件可為可旋轉板材,具有橢圓形、矩形或任何其他適合之形狀。Illustratively with reference to Figures 2A through 2D, a measurement assembly 100 for measuring the deposition rate of a deposited material in accordance with other embodiments is illustrative. According to several embodiments, which can be combined with any of the other embodiments described herein, the movable shutter 140 can be a rotatable element having at least one aperture 160. The at least one aperture 160 can be configured to provide access to the evaporated material from the first measurement outlet to the first oscillating crystal 110 when the rotatable element is in the first state, as exemplarily shown in FIG. 2A . For example, the rotatable element can be a rotatable disc having a substantially circular shape, as exemplarily shown in Figures 2A through 2D. Alternatively, the rotatable element can be a rotatable sheet having an elliptical shape, a rectangular shape or any other suitable shape.
舉例來說,可旋轉元件可連接於驅動器,驅動器裝配以用於提供繞著可旋轉元件之旋轉軸之旋轉運動,如第2A至2D圖範例性所示。For example, the rotatable element can be coupled to a driver that is assembled for providing rotational motion about a rotational axis of the rotatable element, as exemplarily shown in Figures 2A through 2D.
根據可與此處所述任何其他實施例結合之數個實施例,此至少一孔160係裝配以用於在可旋轉元件係為第二狀態中時,提供從第二測量出口至第二振盪晶體120之已蒸發材料之出入。舉例來說,當具有此至少一孔之可旋轉元件從如第2A圖中範例性所示之第一狀態旋轉180°至第二狀態時,用以從第二測量出口至第二振盪晶體120之已蒸發材料之出入口可提供。According to several embodiments, which can be combined with any of the other embodiments described herein, the at least one aperture 160 is configured for providing a second measurement exit to a second oscillation when the rotatable element is in the second state The vaporized material of the crystal 120 is in and out. For example, when the rotatable element having the at least one hole is rotated 180° from the first state exemplarily shown in FIG. 2A to the second state, for exiting from the second measurement exit to the second oscillating crystal 120 The inlet and outlet of the evaporated material can be provided.
範例性參照第2A至2D圖,根據可與此處所述任何其他實施例結合之數個實施例,此至少一孔160可包括第一孔161及第二孔162,第一孔161及第二孔162係相對於彼此直徑地配置。此種裝配係特別有利於提供已蒸發材料同時至第一振盪晶體及第二振盪晶體之出入口,使得多餘之位置測量可執行。Illustratively with reference to Figures 2A through 2D, the at least one aperture 160 can include a first aperture 161 and a second aperture 162, a first aperture 161 and a plurality of embodiments, in accordance with any of the other embodiments described herein. The two holes 162 are arranged in diameter relative to each other. Such an assembly is particularly advantageous for providing the vaporized material to the inlet and outlet of the first oscillating crystal and the second oscillating crystal simultaneously, so that redundant position measurements can be performed.
再者,根據可與此處所述任何其他實施例結合之數個實施例,此至少一孔160可包括第三孔163及第四孔164,第三孔163及第四孔164可配置於第一孔161之相反側上,如第2A至2C圖中範例性所示。第三孔163及第四孔164可額外地或選擇地配置於第二孔162之相反側上(未明確繪示)。特別是,第三孔163及第四孔164可配置於徑向位置,此徑向位置係實質上對應於第一孔161之徑向位置及/或第二孔162之徑向位置。此至少一孔之徑向位置係以箭頭及虛圓線範例性繪示於第2A至2D圖中,此至少一孔之徑向位置舉例為第一孔161、第二孔162、第三孔163、及第四孔164之徑向位置。Furthermore, according to several embodiments, which may be combined with any of the other embodiments described herein, the at least one hole 160 may include a third hole 163 and a fourth hole 164, and the third hole 163 and the fourth hole 164 may be disposed on On the opposite side of the first hole 161, as exemplarily shown in Figs. 2A to 2C. The third aperture 163 and the fourth aperture 164 may be additionally or selectively disposed on opposite sides of the second aperture 162 (not explicitly shown). In particular, the third aperture 163 and the fourth aperture 164 can be disposed in a radial position that substantially corresponds to a radial position of the first aperture 161 and/or a radial position of the second aperture 162. The radial position of the at least one hole is exemplarily shown by arrows and dotted lines in the 2A to 2D drawings. The radial positions of the at least one hole are exemplified by the first hole 161, the second hole 162, and the third hole. 163, and the radial position of the fourth hole 164.
舉例來說,如第2C圖中範例性所示,第三孔163及第四孔164可提供於相對於第一孔161之位置之α=45°的角度α。雖然未明確繪示,第三孔163及第四孔164可額外地或選擇地提供於相對於第二孔162之位置之α=45°的角度α。因此,如從第2A至2D圖可見,可移動遮門可提供而具有四個不同狀態可實現:於第一狀態中,當經由第二測量出口至第二振盪晶體120提供之已蒸發材料之出入口係阻擋時,經由第一測量出口提供之已蒸發材料之出入口係提供至第一振盪晶體110,如第2A圖中所範例性繪示;於第二狀態中,第一測量出口及第二測量出口係阻擋,如第2B圖中所範例性繪示;於第三狀態中,當經由第一測量出口至第一振盪晶體110提供之已蒸發材料之出入口係阻擋時,經由第二測量出口至第二振盪晶體120之已蒸發材料之出入口係提供,如第2C圖中所範例性繪示;以及於第四狀態中,經由第二測量出口至第二振盪晶體120提供之已蒸發材料之出入口及經由第一測量出口至第一振盪晶體110提供之已蒸發材料之出入口係提供。For example, as exemplarily shown in FIG. 2C, the third hole 163 and the fourth hole 164 may be provided at an angle α of α=45° with respect to the position of the first hole 161. Although not explicitly shown, the third aperture 163 and the fourth aperture 164 may additionally or alternatively be provided at an angle a of a = 45° relative to the position of the second aperture 162. Thus, as can be seen from Figures 2A to 2D, the movable shutter can be provided with four different states: in the first state, when the evaporated material is supplied to the second oscillating crystal 120 via the second measurement exit When the inlet and outlet are blocked, the inlet and outlet of the evaporated material supplied through the first measurement outlet are supplied to the first oscillating crystal 110, as exemplarily shown in FIG. 2A; in the second state, the first measurement outlet and the second Measuring the outlet barrier, as exemplarily illustrated in FIG. 2B; in the third state, when the inlet and outlet of the evaporated material provided via the first measurement outlet to the first oscillating crystal 110 is blocked, via the second measurement outlet Provided to the inlet and outlet of the vaporized material of the second oscillating crystal 120, as exemplarily illustrated in FIG. 2C; and in the fourth state, the evaporated material provided to the second oscillating crystal 120 via the second measurement outlet The inlet and outlet and the inlet and outlet of the vaporized material provided via the first measurement outlet to the first oscillating crystal 110 are provided.
因此,如此處所述之測量組件之可移動遮門係裝配以用於阻擋/開放從第一測量出口至第一振盪晶體提供之已蒸發材料,及用於阻擋/開放從第二測量出口至第二振盪晶體提供之已蒸發材料。如此一來,當第一測量出口係阻擋時,第一振盪晶體可舉例為藉由加熱來進行清洗,而沈積率測量可同時利用第二振盪晶體執行,及反之亦然。因此,改善之測量組件係提供而可執行連續沈積率測量。再者,根據此處所述實施例之測量組件係提供原位清洗用於測量之振盪晶體之可能性。Thus, the movable shutter assembly of the measuring assembly as described herein is configured to block/open the vaporized material provided from the first measurement outlet to the first oscillating crystal, and to block/open from the second measurement outlet to The second oscillating crystal provides the evaporated material. As such, when the first measurement exit is blocked, the first oscillating crystal can be exemplified by cleaning by heating, and the deposition rate measurement can be performed simultaneously with the second oscillating crystal, and vice versa. Thus, an improved measurement component is provided to perform continuous deposition rate measurements. Furthermore, the measurement assembly according to the embodiments described herein provides the possibility of cleaning the oscillating crystals for measurement in situ.
如第2A至2D圖中所範例性繪示,根據可與此處所述其他實施例結合之數個實施例,第一振盪晶體110及第二振盪晶體120可固定於支承件150(繪示於第3圖中)。範例性參照第2C圖,根據可與此處所述其他實施例結合之一些實施例,支承件150可包括至少一加熱元件170。此至少一加熱元件170係裝配及配置,使得沈積於遮門上之材料可由提供之熱進行蒸發,特別是沈積於面對支承件之遮門之一側上之材料可由提供之熱進行蒸發。因此,可清洗沈積於遮門上之材料。舉例來說,如第2C圖中範例性所示,至少一加熱元件170可包括第一加熱元件171及/或第二加熱元件172及/或第三加熱元件173及/或第四加熱元件174及/或第五加熱元件175及/或第六加熱元件176。特別是,加熱元件可以圓形方式配置於支承件150上,舉例為在具有半徑R之圓上,此具有半徑R之圓係實質上對應於此至少一孔160提供於可移動遮門140中之半徑R。根據範例性應用,加熱元件係彼此等距配置,舉例為相鄰之加熱元件之間具有45°之角度,如第2C圖中範例性繪示。或者,如第2D圖中範例性所示,此至少一加熱元件170可裝配成環區段元件,環區段元件具有至少對應於此至少一孔160之開孔之寬度,如第2D圖中範例性所示。舉例來說, 可提供第一環區段加熱元件177及第二環區段加熱元件178。再者,將理解的是,此至少一加熱元件170可具有任何適合之形狀或裝配。As exemplarily illustrated in FIGS. 2A-2D, the first oscillating crystal 110 and the second oscillating crystal 120 may be fixed to the support member 150 according to several embodiments that may be combined with other embodiments described herein. In Figure 3). By way of example with reference to FIG. 2C, the support 150 can include at least one heating element 170 in accordance with some embodiments that can be combined with other embodiments described herein. The at least one heating element 170 is assembled and configured such that the material deposited on the shutter can be vaporized by the heat provided, particularly the material deposited on one side of the shutter facing the support can be vaporized by the heat provided. Therefore, the material deposited on the shutter can be cleaned. For example, as exemplarily shown in FIG. 2C, at least one heating element 170 can include a first heating element 171 and/or a second heating element 172 and/or a third heating element 173 and/or a fourth heating element 174. And/or fifth heating element 175 and/or sixth heating element 176. In particular, the heating element can be disposed on the support member 150 in a circular manner, for example, on a circle having a radius R, the circle having the radius R substantially corresponding to the at least one hole 160 being provided in the movable shutter 140 The radius R. According to an exemplary application, the heating elements are arranged equidistant from one another, for example with an angle of 45[deg.] between adjacent heating elements, as exemplarily illustrated in Figure 2C. Alternatively, as exemplarily shown in FIG. 2D, the at least one heating element 170 can be assembled into a ring segment element having a width corresponding to at least one of the openings of the at least one hole 160, as in FIG. 2D An example is shown. For example, a first loop segment heating element 177 and a second loop segment heating element 178 can be provided. Again, it will be understood that the at least one heating element 170 can have any suitable shape or fit.
範例性參照第3圖,根據可與此處所述任何其他實施例結合之數個實施例,測量組件可包括加熱器114,裝配以用於提供熱至第一振盪晶體110及/或第二振盪晶體120,使得沈積於第一振盪晶體110及/或第二振盪晶體120上之材料可蒸發。舉例來說,加熱器114可設置於支承件150中,第一振盪晶體110及/或第二振盪晶體120可配置於支承件150中。支承件150可包括測量開孔122。測量開孔122可裝配及配置,使得已蒸發材料可沈積於第一振盪晶體110及/或第二振盪晶體120上,用以測量已蒸發材料之沈積率。如第3圖中範例性所示,其他加熱器115可額外地或選擇地設置於可移動遮門140中,舉例為參照第1A至1C圖所說明之可移動遮門中,或參照第2A至2D圖所說明之可移動遮門中。特別是,設置於可移動遮門140之其他加熱器115係裝配以用於提供熱至可移動遮門,使得沈積於可移動遮門上之材料可蒸發。一般來說,加熱器114及/或其他加熱器115係裝配以用於提供加熱溫度,此加熱溫度係至少對應於沈積於振盪晶體上及/或沈積於遮門上之材料之蒸發溫度。因此,振盪晶體可藉由此處所述之加熱來進行清洗。再者,遮門可亦藉由加熱遮門來進行清洗。By way of example with reference to FIG. 3, in accordance with several embodiments that can be combined with any of the other embodiments described herein, the measurement assembly can include a heater 114 that is configured to provide heat to the first oscillating crystal 110 and/or second. The crystal 120 is oscillated such that the material deposited on the first oscillating crystal 110 and/or the second oscillating crystal 120 can be evaporated. For example, the heater 114 can be disposed in the support 150, and the first oscillating crystal 110 and/or the second oscillating crystal 120 can be disposed in the support 150. The support 150 can include a measurement aperture 122. The measurement opening 122 can be assembled and configured such that evaporated material can be deposited on the first oscillating crystal 110 and/or the second oscillating crystal 120 to measure the deposition rate of the evaporated material. As exemplarily shown in FIG. 3, other heaters 115 may be additionally or selectively disposed in the movable shutter 140, for example, in the movable shutter described with reference to FIGS. 1A to 1C, or with reference to the 2A. In the movable cover shown in the 2D diagram. In particular, other heaters 115 disposed on the movable shutter 140 are assembled for providing heat to the movable shutter such that material deposited on the movable shutter can evaporate. In general, heater 114 and/or other heaters 115 are configured to provide a heating temperature that corresponds at least to the evaporation temperature of the material deposited on the oscillating crystal and/or deposited on the shutter. Thus, the oscillating crystal can be cleaned by heating as described herein. Furthermore, the shutter can also be cleaned by heating the shutter.
範例性參照第3圖,根據可與此處所述其他實施例結合之一些實施例,可移動遮門140可包括熱保護遮罩物116。如第3圖中範例性所示,熱保護遮罩物116可配置於可移動遮門140之一側上。可移動遮門140之此側係面對測量出口,舉例為第一測量出口151或第二測量出口152。特別是,熱保護遮罩物116可裝配以用於反射由已蒸發料提供之熱能,此已蒸發材料係通過測量出口提供。根據可與此處所述其他實施例結合之數個實施例,熱保護遮罩物116可為板材,例為金屬片。或者,熱保護遮罩物116可包括二或多個板材,舉例為金屬片,相對於彼此間隔舉例為0.1 mm或更多之縫隙。舉例來說,金屬片可具有0.1 mm至3.0 mm之厚度。特別是,熱保護遮罩物包括含鐵(ferrous)或非鐵(non-ferrous)材料,舉例為選自由銅(Cu)、鋁(Al)、銅合金、鋁合金、黃銅、鐵、鈦(Ti)、陶瓷及其他適合之材料所組成之群組之至少一材料。By way of example with reference to FIG. 3, the movable shutter 140 can include a thermal shield 116 in accordance with some embodiments that can be combined with other embodiments described herein. As exemplarily shown in FIG. 3, the thermal protection mask 116 may be disposed on one side of the movable shutter 140. This side of the movable shutter 140 faces the measurement outlet, for example, the first measurement outlet 151 or the second measurement outlet 152. In particular, the thermal protection mask 116 can be assembled to reflect the thermal energy provided by the evaporated material, which is provided through the measurement outlet. According to several embodiments, which may be combined with other embodiments described herein, the thermal shield 116 may be a sheet material, such as a metal sheet. Alternatively, the thermal protection mask 116 may comprise two or more sheets, such as sheet metal, spaced apart from each other by a gap of 0.1 mm or more. For example, the metal sheet may have a thickness of 0.1 mm to 3.0 mm. In particular, the thermal protection mask comprises a ferrous or non-ferrous material, for example selected from the group consisting of copper (Cu), aluminum (Al), copper alloys, aluminum alloys, brass, iron, titanium. At least one material of the group consisting of (Ti), ceramics, and other suitable materials.
根據可與此處所述任何其他實施例結合之數個實施例,可移動遮門140之其他加熱器115可設置於可移動遮門140之一側上。可移動遮門140之此側係面對振盪晶體,舉例為第一振盪晶體110或第二振盪晶體120。因此,藉由提供如此處所述之加熱器,且加熱器舉例為設置在支承件或遮門中,如此處所述之測量組件之振盪晶體可藉由加熱器所提供之熱來蒸發沈積於振盪晶體上之材料而進行原位清洗。此可有利於振盪晶體之整體壽命且測量準確性可達成。According to several embodiments, which may be combined with any of the other embodiments described herein, other heaters 115 of the movable shutter 140 may be disposed on one side of the movable shutter 140. The side of the movable shutter 140 faces the oscillating crystal, for example, the first oscillating crystal 110 or the second oscillating crystal 120. Thus, by providing a heater as described herein, and the heater is exemplified as being disposed in a support or a shutter, the oscillating crystal of the measuring assembly as described herein can be evaporated and deposited by the heat provided by the heater. The material on the crystal is oscillated for in situ cleaning. This can be beneficial to the overall lifetime of the oscillating crystal and measurement accuracy can be achieved.
根據可與此處所述其他實施例結合之數個實施例,測量組件100可包括熱加換器132。特別是,熱交換器可配置於支承件中,舉例為靠近或相鄰於振盪晶體及/或靠近或相鄰於加熱器114。熱交換器132可裝配以與振盪晶體及/或支承件150及/或加熱器114交換熱。舉例來說,熱交換器可包括管,冷卻流體可提供而通過管。冷卻流體可為液體或氣體。液體舉例為水,氣體舉例為空氣。熱交換器可額外地或選擇地包括一或多個帕爾帖(Peltier)元件。一般來說,熱交換器係在測量振盪晶體期間應用,且在由加熱器執行之加熱振盪晶體之清洗程序期間關閉。因此,藉由提供具有熱交換器132之測量組件,高溫對沈積率測量之品質、準確性及穩定性之負面效應可減少或甚至消除。特別是,在測量裝置已經藉由加熱來清洗以蒸發來自沈積率測量裝置之已沈積材料之後,提供具有熱交換器之測量組件可有利於冷卻測量裝置。The measurement assembly 100 can include a thermal adder 132 in accordance with several embodiments that can be combined with other embodiments described herein. In particular, the heat exchanger can be disposed in the support, for example near or adjacent to the oscillating crystal and/or adjacent or adjacent to the heater 114. The heat exchanger 132 can be configured to exchange heat with the oscillating crystal and/or the support 150 and/or the heater 114. For example, the heat exchanger can include a tube through which a cooling fluid can be supplied. The cooling fluid can be a liquid or a gas. The liquid is exemplified by water, and the gas is exemplified by air. The heat exchanger may additionally or alternatively include one or more Peltier elements. Generally, the heat exchanger is applied during the measurement of the oscillating crystal and is turned off during the cleaning process of the heated oscillating crystal performed by the heater. Thus, by providing a measurement assembly having a heat exchanger 132, the negative effects of high temperature on the quality, accuracy, and stability of the deposition rate measurement can be reduced or even eliminated. In particular, after the measuring device has been cleaned by heating to evaporate the deposited material from the deposition rate measuring device, providing a measuring assembly having a heat exchanger can facilitate cooling the measuring device.
範例性參照第3圖,根據可與此處所述其他實施例結合之數個實施例,測量組件100可包括溫度感測器117,用以測量振盪晶體及/或支承件150之溫度。藉由提供具有溫度感測器117之測量組件100,有關於測量組件之溫度的資訊可取得,使得振盪晶體易於測量不準確之臨界溫度可偵測出來。因此,在振盪晶體之臨界溫度係藉由溫度感測器偵測出來之情況中,可啟動適當的反應,舉例為藉由應用熱交換器來進行冷卻。By way of example with reference to FIG. 3, in accordance with several embodiments that may be combined with other embodiments described herein, the measurement assembly 100 can include a temperature sensor 117 for measuring the temperature of the oscillating crystal and/or the support 150. By providing the measuring component 100 with the temperature sensor 117, information about the temperature of the measuring component can be obtained so that the critical temperature at which the oscillating crystal is easy to measure inaccurate can be detected. Therefore, in the case where the critical temperature of the oscillating crystal is detected by the temperature sensor, an appropriate reaction can be initiated, for example, by applying a heat exchanger for cooling.
根據可與此處所述其他實施例結合之數個實施例,特別是用以測量沈積率之測量組件100可包括溫度控制系統,用以控制振盪晶體之溫度及/或支承件之溫度。特別是,溫度控制系統可包括溫度感測器117、熱交換器132、加熱器114及感測器控制器133之一或多者。如第3圖中範例性所示,感測器控制器133可連接於溫度感測器117,用以接收由溫度感測器117測量之資料。再者,感測器控制器133可連接於熱交換器132,用以控制支承件150及/或振盪晶體之溫度。再者,感測器控制器133可連接於加熱器114及/或其他加熱器115,以舉例為在如此處所述之清洗期間控制支承件150及/或振盪晶體之加熱溫度。According to several embodiments, which may be combined with other embodiments described herein, particularly the measurement assembly 100 for measuring deposition rate may include a temperature control system for controlling the temperature of the oscillating crystal and/or the temperature of the support. In particular, the temperature control system can include one or more of temperature sensor 117, heat exchanger 132, heater 114, and sensor controller 133. As exemplarily shown in FIG. 3, the sensor controller 133 can be coupled to the temperature sensor 117 for receiving data measured by the temperature sensor 117. Furthermore, the sensor controller 133 can be coupled to the heat exchanger 132 for controlling the temperature of the support 150 and/or the oscillating crystal. Further, the sensor controller 133 can be coupled to the heater 114 and/or other heaters 115 to, for example, control the heating temperature of the support 150 and/or the oscillating crystal during cleaning as described herein.
第4A及4B圖繪示根據此處所述實施例之蒸發源200之側視圖。根據數個實施例,蒸發源200包括蒸發坩鍋210,其中蒸發坩鍋係裝配以蒸發材料,材料舉例為有機材料。再者,蒸發源200包括分佈組件。分佈組件舉例為分佈管220,具有一或多個出口222。此一或多個出口222沿著分佈組件之長度提供,用以提供已蒸發材料,如第4B圖中範例性所示。根據數個實施例,分佈管220係流體連通於蒸發坩鍋210,舉例為經由蒸汽導管流體連通於蒸發坩鍋210。蒸汽導管可設置於分佈管之下端。再者,根據此處所述實施例之蒸發源200包括根據此處所述實施例之測量組件100,如舉例是參照第1A圖至第3圖之說明。4A and 4B are side views of an evaporation source 200 in accordance with embodiments described herein. According to several embodiments, the evaporation source 200 includes an evaporation crucible 210 in which the evaporation crucible is assembled to evaporate the material, such as an organic material. Again, evaporation source 200 includes a distribution assembly. The distribution assembly is exemplified by a distribution tube 220 having one or more outlets 222. The one or more outlets 222 are provided along the length of the distribution assembly to provide evaporated material, as exemplarily shown in FIG. 4B. According to several embodiments, the distribution tube 220 is in fluid communication with the evaporation crucible 210, for example, in fluid communication with the evaporation crucible 210 via a steam conduit. A steam conduit can be placed at the lower end of the distribution tube. Moreover, the evaporation source 200 in accordance with the embodiments described herein includes the measurement assembly 100 in accordance with the embodiments described herein, as exemplified by reference to Figures 1A through 3.
如第4A及4B圖中範例性所示,根據可與此處所述其他實施例結合之數個實施例,蒸發源200可包括控制器250,控制器250連接於測量組件100及蒸發源200。如此處所述,控制器250可提供第一控制訊號251至蒸發源200,特別是可提供第一控制訊號251至蒸發坩鍋210,用以調整沈積率。一般來說,控制器250係裝配以接收及分析由測量組件100取得之測量資料。再者,控制器250可提供第二控制訊號252至沈積率測量組件,舉例為用以控制沈積率測量組件之遮門之位置。舉例來說,遮門之位置可控制,使得用以提供已蒸發材料至第一振盪晶體之第一測量出口可藉由遮門阻擋,及/或用以提供已蒸發材料至第二振盪晶體之第二測量出口可藉由遮門阻擋。因此,測量組件之第一振盪晶體及第二振盪晶體之其中一者可進行清洗,而其他振盪晶體可同時使用於沈積率測量。As exemplarily shown in FIGS. 4A and 4B, according to several embodiments that may be combined with other embodiments described herein, the evaporation source 200 may include a controller 250 coupled to the measurement assembly 100 and the evaporation source 200. . As described herein, the controller 250 can provide the first control signal 251 to the evaporation source 200, and in particular, can provide the first control signal 251 to the evaporation crucible 210 for adjusting the deposition rate. In general, controller 250 is assembled to receive and analyze measurement data acquired by measurement component 100. Moreover, the controller 250 can provide the second control signal 252 to the deposition rate measuring component, for example, to control the position of the door of the deposition rate measuring component. For example, the position of the shutter can be controlled such that the first measurement outlet for providing the evaporated material to the first oscillating crystal can be blocked by the shutter and/or used to provide the evaporated material to the second oscillating crystal. The second measurement outlet can be blocked by a shutter. Therefore, one of the first oscillating crystal and the second oscillating crystal of the measuring assembly can be cleaned, and the other oscillating crystals can be used simultaneously for the deposition rate measurement.
如第4A圖中範例性所示,根據可與此處所述其他實施例結合之數個實施例,分佈組件可為延伸立方體,舉例為分佈管220。分佈管220包括加熱元件215。蒸發坩鍋210可為利用坩鍋加熱單元225蒸發之材料之儲器,材料舉例為有機材料。舉例來說,坩鍋加熱單元225可設置於蒸發坩鍋210之外殼中。根據可與此處所述其他實施例結合之數個實施例,分佈組件可提供接線源,特別是分佈管220可提供接線源。舉例來說,如第4B圖中範例性所示,數個出口222例如是噴嘴,可沿著至少一接線配置。根據選擇之實施例(未繪示),可提供沿著此至少一接線延伸之一個延伸開孔,舉例為狹縫。根據可與此處所述其他實施例結合之一些實施例,接線源可本質上垂直延伸。As exemplarily shown in FIG. 4A, the distribution assembly can be an extended cube, such as distribution tube 220, according to several embodiments that can be combined with other embodiments described herein. Distribution tube 220 includes a heating element 215. The evaporation crucible 210 may be a reservoir of material evaporated by the crucible heating unit 225, and the material is exemplified by an organic material. For example, the crucible heating unit 225 can be disposed in the outer casing of the evaporation crucible 210. According to several embodiments, which can be combined with other embodiments described herein, the distribution assembly can provide a source of wiring, and in particular the distribution tube 220 can provide a source of wiring. For example, as exemplarily shown in FIG. 4B, the plurality of outlets 222 are, for example, nozzles that can be configured along at least one wire. According to a selected embodiment (not shown), an extended opening extending along the at least one wire, such as a slit, may be provided. According to some embodiments, which may be combined with other embodiments described herein, the wiring source may extend substantially vertically.
根據可與此處所述其他實施例結合之一些實施例,分佈管之長度可對應於基板之高度,材料係於沈積設備中將沈積於此基板上。或者,分佈管之長度可比基板之高度長舉例為至少10%或甚至20%,材料係將沈積於此基板上。因此,可提供在基板之上端及/或基板之下端之均勻沈積。舉例來說,分佈管之長度可為1.3 m或以上,舉例為2.5 m或以上。According to some embodiments, which may be combined with other embodiments described herein, the length of the distribution tube may correspond to the height of the substrate onto which the material will be deposited in the deposition apparatus. Alternatively, the length of the distribution tube can be, for example, at least 10% or even 20% longer than the height of the substrate, and the material will be deposited on the substrate. Thus, uniform deposition at the upper end of the substrate and/or at the lower end of the substrate can be provided. For example, the length of the distribution tube can be 1.3 m or more, for example 2.5 m or more.
根據可與此處所述其他實施例結合之數個實施例,蒸發坩鍋210可設置於分佈管之下端,如第4A圖中範例性所示。材料可在蒸發坩鍋210中蒸發,材料舉例為有機材料。已蒸發材料可在分佈管之底部進入分佈管且可本質上側向導引通過在分佈管220中之此些出口222而舉例為朝向本質上垂直之基板。範例性參照第4B圖,根據此處所述實施例之測量組件100可設置於分佈管220之上部份,舉例為分佈管220之上端。According to several embodiments, which may be combined with other embodiments described herein, the evaporation crucible 210 may be disposed at the lower end of the distribution tube as exemplarily shown in FIG. 4A. The material can be evaporated in the evaporation crucible 210, and the material is exemplified by an organic material. The evaporated material can enter the distribution tube at the bottom of the distribution tube and can be oriented substantially laterally through the outlets 222 in the distribution tube 220 as an example of a substrate that is substantially perpendicular. Illustratively with reference to FIG. 4B, the measurement assembly 100 according to embodiments described herein can be disposed over the upper portion of the distribution tube 220, such as the upper end of the distribution tube 220.
範例性參照第4B圖,根據可與此處所述其他實施例結合之數個實施例,第一測量出口151及第二測量出口152可提供於分佈組件之牆中,舉例為分佈管之背側224A之牆中,特別是背側224A之牆的上部份。雖然未明確繪示出來,將理解的是,根據可與此處所述其他實施例結合之數個實施例,第一測量出口151及第二測量出口152可提供於分佈組件之頂牆224C中,特別是分佈組件之上水平頂牆。如第4B圖中之箭頭範例性所示,已蒸發材料可從分佈管220之內側經由第一測量出口151及/或第二測量出口152提供至測量組件100。因此,第一測量出口151及/或第二測量出口152係配置且導向,使得已蒸發材料可提供於第一振盪晶體及/或第二振盪晶體。舉例來說,測量組件100可配置於分佈組件之背側224A,特別是在分佈組件之上端部份之背側224A。分佈組件舉例為分佈管220。一般來說,分佈組件之端部份之背側係背對沈積方向。根據一些實施例,測量組件100可固定於分佈組件之上端部份之背側224A,特別是分佈管220之上端部份之背側224A。By way of example with reference to FIG. 4B, the first measurement outlet 151 and the second measurement outlet 152 may be provided in a wall of a distribution assembly, such as the back of a distribution tube, according to several embodiments that may be combined with other embodiments described herein. In the wall of side 224A, especially the upper part of the wall of the back side 224A. Although not explicitly shown, it will be understood that the first measurement outlet 151 and the second measurement outlet 152 may be provided in the top wall 224C of the distribution assembly in accordance with several embodiments that may be combined with other embodiments described herein. , in particular, the horizontal top wall above the distribution component. As exemplarily shown by the arrows in FIG. 4B, the evaporated material may be provided from the inside of the distribution tube 220 to the measurement assembly 100 via the first measurement outlet 151 and/or the second measurement outlet 152. Accordingly, the first measurement outlet 151 and/or the second measurement outlet 152 are configured and oriented such that the evaporated material can be provided to the first oscillating crystal and/or the second oscillating crystal. For example, the measurement assembly 100 can be disposed on the back side 224A of the distribution assembly, particularly on the back side 224A of the upper end portion of the distribution assembly. The distribution component is exemplified by the distribution tube 220. Generally, the back side of the end portion of the distribution assembly is facing away from the deposition direction. According to some embodiments, the measurement assembly 100 can be secured to the back side 224A of the upper end portion of the distribution assembly, particularly the back side 224A of the upper end portion of the distribution tube 220.
根據可與此處所述其他實施例結合之數個實施例,第一測量出口151及/或第二測量出口152可具有從0.5 mm至4 mm之開孔。再者,第一測量出口151及/或第二測量出口152可包括噴嘴。舉例來說,噴嘴可包括可調整開孔,用以調整提供至測量組件100之已蒸發材料之流量。特別是,噴嘴可裝配以提供選自一範圍之測量流量。此範圍係在一下限及一上限之間。下限為蒸發源提供之總流量之1/70,特別是蒸發源提供之總流量之1/60,更特別是蒸發源提供之總流量之1/50。上限為蒸發源提供之總流量之1/40,特別是蒸發源提供之總流量之1/30,更特別是蒸發源提供之總流量之1/25。舉例來說,噴嘴可裝配以提供蒸發源提供之總流量之1/54之測量流量。According to several embodiments, which may be combined with other embodiments described herein, the first measurement outlet 151 and/or the second measurement outlet 152 may have openings from 0.5 mm to 4 mm. Again, the first measurement outlet 151 and/or the second measurement outlet 152 can include a nozzle. For example, the nozzle can include an adjustable opening to adjust the flow of evaporated material provided to the measurement assembly 100. In particular, the nozzle can be assembled to provide a measured flow rate selected from a range. This range is between a lower limit and an upper limit. The lower limit is 1/70 of the total flow provided by the evaporation source, particularly 1/60 of the total flow provided by the evaporation source, more particularly 1/50 of the total flow provided by the evaporation source. The upper limit is 1/40 of the total flow provided by the evaporation source, especially 1/30 of the total flow provided by the evaporation source, more particularly 1/25 of the total flow provided by the evaporation source. For example, the nozzle can be assembled to provide a measured flow of 1/54 of the total flow provided by the evaporation source.
第5圖繪示根據此處所述實施例之蒸發源200之透視圖。如第5圖中範例性所示,分佈管220可設計成三角形之形狀。如上所述,分佈管220之三角形之形狀可在二或多個分佈管係彼此相鄰之情況中為有利的。特別是,分佈管220之三角形之形狀讓相鄰之分佈管之出口盡可能靠近彼此係為可行的。此讓來自不同分佈管之不同材料之改善混合係達成,舉例為用於二、三或甚至多種不同材料之共蒸發之情況。再者,第5圖中所示之實施例一般係繪示而提供第一測量出口151及第二測量出口152。第一測量出口151用以提供已蒸發材料至測量組件100之第一振盪晶體,第二測量出口152用以提供已蒸發材料至測量組件100之第二振盪晶體。第一測量出口151及第二測量出口152舉例為提供在分佈管之上端,如範例性參照第4A及4B圖。Figure 5 depicts a perspective view of an evaporation source 200 in accordance with embodiments described herein. As exemplarily shown in Fig. 5, the distribution tube 220 can be designed in the shape of a triangle. As mentioned above, the shape of the triangle of the distribution tube 220 can be advantageous in situations where two or more distribution tubes are adjacent to one another. In particular, the triangular shape of the distribution tube 220 makes it feasible to have the outlets of adjacent distribution tubes as close to each other as possible. This allows for improved mixing of different materials from different distribution tubes, for example for co-evaporation of two, three or even different materials. Furthermore, the embodiment shown in FIG. 5 is generally illustrated to provide a first measurement outlet 151 and a second measurement outlet 152. The first measurement outlet 151 is for providing the first oscillating crystal of the evaporated material to the measurement assembly 100, and the second measurement outlet 152 is for providing the second oscillating crystal of the evaporated material to the measurement assembly 100. The first measurement outlet 151 and the second measurement outlet 152 are exemplified as being provided at the upper end of the distribution tube, as exemplarily described with reference to Figures 4A and 4B.
範例性參照第5圖,分佈管220可包括牆,舉例為側壁224B及位於分佈管之背側224A之牆。如第5圖中範例性所示,第一測量出口151及第二測量出口152可提供於分佈管220之背側224A之牆中。再者,側壁224B及在背側224A之牆可由加熱元件215加熱。舉例來說,加熱元件215可固定或貼附於分佈管220之牆,如第5圖中範例性所示。根據可與此處所述其他實施例結合之一些實施例,蒸發源200可包括遮罩物204。遮罩物204可減少朝向沈積區域之熱輻射。再者,遮罩物204可藉由冷卻元件216冷卻。舉例來說,冷卻元件216可固定於遮罩物204且可包括用於冷卻流體之導管。Illustratively with reference to Figure 5, the distribution tube 220 can include a wall, such as a sidewall 224B and a wall located on the back side 224A of the distribution tube. As exemplarily shown in FIG. 5, the first measurement outlet 151 and the second measurement outlet 152 may be provided in the wall of the back side 224A of the distribution tube 220. Furthermore, the side wall 224B and the wall on the back side 224A can be heated by the heating element 215. For example, the heating element 215 can be attached or attached to the wall of the distribution tube 220, as exemplarily shown in FIG. According to some embodiments, which may be combined with other embodiments described herein, the evaporation source 200 may include a mask 204. The mask 204 can reduce heat radiation toward the deposition area. Furthermore, the mask 204 can be cooled by the cooling element 216. For example, the cooling element 216 can be secured to the shroud 204 and can include a conduit for cooling the fluid.
第6圖繪示根據此處所述實施例之用以於真空腔室310中提供材料於基板333之沈積設備300之上視圖。根據可與此處所述其他實施例結合之數個實施例,沈積設備300包括如此處所述之蒸發源200。特別是,蒸發源200可設置於沈積設備300之真空腔室310中,舉例為在軌道上。軌道舉例為線性導件320或環狀軌道。軌道或線性導件320可裝配以用於蒸發源200之平移運動。因此,用於平移運動之驅動器可在真空腔室310中於軌道及/或線性導件320提供而用於蒸發源200。根據可與此處所述其他實施例結合之數個實施例,第一閥305舉例為閘閥,可提供而用於真空密封於相鄰真空腔室(未繪示於第6圖中)。第一閥可開啟而用於傳送基板333或遮罩332至真空腔室310中或傳送基板333或遮罩332離開真空腔室310。FIG. 6 illustrates a top view of deposition apparatus 300 for providing material to substrate 333 in vacuum chamber 310 in accordance with embodiments described herein. According to several embodiments, which can be combined with other embodiments described herein, deposition apparatus 300 includes an evaporation source 200 as described herein. In particular, the evaporation source 200 can be disposed in the vacuum chamber 310 of the deposition apparatus 300, such as on a track. The track is exemplified by a linear guide 320 or an annular track. Track or linear guide 320 can be assembled for translational movement of evaporation source 200. Thus, a driver for translational motion can be provided in the vacuum chamber 310 to the orbital and/or linear guide 320 for the evaporation source 200. According to several embodiments, which may be combined with other embodiments described herein, the first valve 305 is exemplified as a gate valve that may be provided for vacuum sealing to an adjacent vacuum chamber (not shown in Figure 6). The first valve can be opened for transporting the substrate 333 or the mask 332 into the vacuum chamber 310 or the transfer substrate 333 or the mask 332 exiting the vacuum chamber 310.
根據可與此處所述其他實施例結合之一些實施例,其他真空腔室可設置而相鄰於真空腔室310,其他真空腔室例如是維護真空腔室311,如第6圖中範例性繪示。因此,真空腔室310及維護真空腔室311可以第二閥307連接。第二閥307可裝配以開啟及關閉在真空腔室310和維護真空腔室311之間的真空密封。當第二閥307係為開啟狀態時,蒸發源200可傳送至維護真空腔室311。之後,第二閥307可關閉以提供在真空腔室310與維護真空腔室311之間的真空密封。如果第二閥307係關閉時,維護真空腔室311可排氣且開啟來進行蒸發源200之維護而不破壞真空腔室310中之真空。According to some embodiments, which may be combined with other embodiments described herein, other vacuum chambers may be disposed adjacent to the vacuum chamber 310, such as the maintenance vacuum chamber 311, as exemplified in FIG. Painted. Therefore, the vacuum chamber 310 and the maintenance vacuum chamber 311 can be connected by the second valve 307. The second valve 307 can be configured to open and close a vacuum seal between the vacuum chamber 310 and the maintenance vacuum chamber 311. When the second valve 307 is in the open state, the evaporation source 200 can be transferred to the maintenance vacuum chamber 311. Thereafter, the second valve 307 can be closed to provide a vacuum seal between the vacuum chamber 310 and the maintenance vacuum chamber 311. If the second valve 307 is closed, the maintenance vacuum chamber 311 can be vented and opened for maintenance of the evaporation source 200 without damaging the vacuum in the vacuum chamber 310.
如第6圖中範例性繪示,兩個基板可支撐於真空腔室310中之個別之傳送軌道上。再者,可提供兩個軌道,用以提供遮罩於其上。因此,在塗佈期間,基板333可由個別之遮罩進行遮蔽。舉例來說,遮罩可設置於遮罩框架331中,以支承遮罩332於預定位置中。As exemplarily shown in FIG. 6, the two substrates can be supported on individual transport tracks in the vacuum chamber 310. Furthermore, two tracks can be provided to provide a mask thereon. Thus, during coating, the substrate 333 can be masked by individual masks. For example, a mask may be disposed in the mask frame 331 to support the mask 332 in a predetermined position.
根據可與此處所述其他實施例結合之一些實施例,基板333可由基板支撐件326支撐,基板支撐件326可連接於對準單元312。對準單元312可調整基板333相對於遮罩332之位置。如第6圖中所範例性繪示,基板支撐件326可連接於對準單元312。因此,基板可相對於遮罩332移動,以在材料沈積期間提供基板與遮罩之間合適的對準,而可有利於高品質之顯示器製造。遮罩332及/或支承遮罩332之遮罩框架331可選擇地或額外地連接於對準單元312。因此,遮罩332可相對於基板333定位或者遮罩332及基板333兩者可相對於彼此定位。According to some embodiments, which may be combined with other embodiments described herein, the substrate 333 may be supported by a substrate support 326 that may be coupled to the alignment unit 312. The alignment unit 312 can adjust the position of the substrate 333 relative to the mask 332. As exemplarily illustrated in FIG. 6, the substrate support 326 can be coupled to the alignment unit 312. Thus, the substrate can be moved relative to the mask 332 to provide proper alignment between the substrate and the mask during material deposition, which can facilitate high quality display fabrication. The mask 332 and/or the mask frame 331 supporting the mask 332 are selectively or additionally connected to the alignment unit 312. Thus, the mask 332 can be positioned relative to the substrate 333 or both the mask 332 and the substrate 333 can be positioned relative to each other.
如第6圖中所示,線性導件320可提供蒸發源200之平移運動之方向。在蒸發源200之兩側上可提供遮罩332。遮罩可本質上平行於平移運動之方向延伸。再者,在蒸發源200之相對側的基板可亦本質上平行於平移運動之方向延伸。如第6圖中範例性所示,設置於沈積設備300之真空腔室310中之蒸發源200可包括支撐件202。支撐件202可裝配以用於沿著線性導件320平移運動。舉例來說,支撐件202可支撐兩個蒸發坩鍋和兩個分佈管220,分佈管220設置於個別之蒸發坩鍋之上方。根據一些實施例,支撐件202可支撐三個蒸發坩鍋及三個分佈管220,此三個分佈管220設置於個別之蒸發坩鍋之上方。因此,在蒸發坩鍋中產生之蒸汽可向上地移動及離開分佈管之此一或多個出口。蒸發源之分佈管可具有實質上三角形之剖面。分佈管之三角形之形狀係讓用以沈積已蒸發材料於基板上之相鄰之分佈管之出口盡可能靠近彼此,出口舉例為噴嘴。此讓來自不同分佈管之不同材料之改善混合係達成,舉例為用於二、三或甚至多種不同材料之共蒸發之情況。As shown in FIG. 6, the linear guide 320 can provide the direction of the translational motion of the evaporation source 200. A mask 332 may be provided on both sides of the evaporation source 200. The mask may extend substantially parallel to the direction of the translational motion. Furthermore, the substrate on the opposite side of the evaporation source 200 can also extend substantially parallel to the direction of translational motion. As exemplarily shown in FIG. 6, the evaporation source 200 disposed in the vacuum chamber 310 of the deposition apparatus 300 may include a support 202. The support 202 can be assembled for translational movement along the linear guide 320. For example, the support member 202 can support two evaporation crucibles and two distribution tubes 220 disposed above the individual evaporation crucibles. According to some embodiments, the support member 202 can support three evaporation crucibles and three distribution tubes 220 disposed above the individual evaporation crucibles. Thus, the steam generated in the evaporation crucible can move up and out of the one or more outlets of the distribution tube. The distribution tube of the evaporation source can have a substantially triangular cross section. The triangular shape of the distribution tube is such that the outlets of the adjacent distribution tubes for depositing the evaporated material on the substrate are as close as possible to each other, and the outlet is exemplified by a nozzle. This allows for improved mixing of different materials from different distribution tubes, for example for co-evaporation of two, three or even different materials.
因此,如此處所述之沈積設備之實施例係提供而用於改善品質之顯示器製造,特別是OLED製造。Thus, embodiments of deposition apparatus as described herein are provided for improved display manufacturing, particularly OLED manufacturing.
範例性參照繪示於第7A及7B圖中之方塊圖,用以測量已蒸發材料之沈積率之方法之實施例係說明。根據可與此處所述任何其他實施例結合之數個實施例,用以測量已蒸發材料之沈積率之方法400包括蒸發410材料,材料舉例為有機材料;供應420已蒸發材料之第一部份至基板;轉向430已蒸發材料之第二部份至第一振盪晶體及/或第二振盪晶體;及藉由利用根據此處所述任何實施例之測量組件100測量440沈積率。Exemplary embodiments of the method for measuring the deposition rate of evaporated materials are illustrated in the block diagrams of Figures 7A and 7B. According to several embodiments, which can be combined with any of the other embodiments described herein, the method 400 for measuring the deposition rate of evaporated material includes evaporating 410 material, the material being exemplified by an organic material; supplying the first portion of the 420 evaporated material And refracting a second portion of the material to the first oscillating crystal and/or the second oscillating crystal; and measuring 440 the deposition rate by using the measuring assembly 100 according to any of the embodiments described herein.
因此,藉由應用根據此處所述實施例之用以測量已蒸發材料之沈積率之方法,沈積率可非常準確地測量。特別是,藉由應用如此處所述之用以測量已蒸發材料之沈積率之方法,可能減少測量準確性之振盪晶體上之熱效應可減少。特別是,高溫對沈積率之品質、準確性及穩定性之負面效應可減少或甚至消除。再者,根據此處所述之數個實施例之用以測量已蒸發材料之沈積率測量之方法係提供而用於多餘地測量沈積率,而可更改善測量結果之品質及準確性。再者,如此處所述之用以測量已蒸發材料之沈積率之方法係提供清洗第一振盪晶體及第二振盪晶體之其中一者之可能性,而其他振盪晶體可使用於沈積率測量。Thus, by applying a method for measuring the deposition rate of evaporated material according to the embodiments described herein, the deposition rate can be measured very accurately. In particular, by applying a method for measuring the deposition rate of an evaporated material as described herein, the thermal effect on the oscillating crystal, which may reduce the measurement accuracy, may be reduced. In particular, the negative effects of high temperatures on the quality, accuracy and stability of the deposition rate can be reduced or even eliminated. Furthermore, the method for measuring the deposition rate measurement of the evaporated material according to several embodiments described herein is provided for redundant measurement of the deposition rate, and the quality and accuracy of the measurement result can be further improved. Further, the method for measuring the deposition rate of the evaporated material as described herein provides the possibility of cleaning one of the first oscillating crystal and the second oscillating crystal, and other oscillating crystals can be used for the deposition rate measurement.
根據可與此處所述其他實施例結合之數個實施例,蒸發410材料包括使用如此處所述之蒸發坩鍋210。再者,供應420已蒸發材料之第一部份至基板可包括使用根據此處所述實施例之蒸發源200。根據可與此處所述其他實施例結合之數個實施例,轉向430已蒸發材料之第二部份至第一振盪晶體及/或第二振盪晶體可包括如此處所述之使用第一測量出口151及/或第二測量出口152。特別是,轉向430已蒸發材料之第二部份至第一測量出口151及/或第二測量出口152可包括提供選自一範圍之測量流量。此範圍係在一下限及一上限之間。下限為蒸發源提供之總流量之1/70,特別是蒸發源提供之總流量之1/60,更特別是蒸發源提供之總流量之1/50。上限為蒸發源提供之總流量之1/40,特別是蒸發源提供之總流量之1/30,更特別是蒸發源提供之總流量之1/25。舉例來說,轉向430已蒸發材料之第二部份至第一測量出口151及/或第二測量出口152可包括提供蒸發源提供之總流量之1/54之測量流量。According to several embodiments, which can be combined with other embodiments described herein, evaporating 410 material includes using an evaporation crucible 210 as described herein. Further, supplying the first portion of the 420 evaporated material to the substrate can include using the evaporation source 200 in accordance with embodiments described herein. According to several embodiments, which can be combined with other embodiments described herein, turning the second portion of the evaporated material to the first oscillating crystal and/or the second oscillating crystal can comprise using the first measurement as described herein. The outlet 151 and/or the second measurement outlet 152. In particular, turning to the second portion of the vaporized material 430 to the first measurement outlet 151 and/or the second measurement outlet 152 can include providing a measured flow rate selected from a range. This range is between a lower limit and an upper limit. The lower limit is 1/70 of the total flow provided by the evaporation source, particularly 1/60 of the total flow provided by the evaporation source, more particularly 1/50 of the total flow provided by the evaporation source. The upper limit is 1/40 of the total flow provided by the evaporation source, especially 1/30 of the total flow provided by the evaporation source, more particularly 1/25 of the total flow provided by the evaporation source. For example, turning the second portion of the vaporized material 430 to the first measurement outlet 151 and/or the second measurement outlet 152 can include providing a measured flow rate of 1/54 of the total flow rate provided by the evaporation source.
根據可與此處所述其他實施例結合之數個實施例,測量440沈積率可包括藉由如此處所述之溫度控制系統與測量組件100交換熱,特別是與第一振盪晶體及/或第二振盪晶體交換熱。因此,藉由與如此處所述之測量組件交換熱,特別是與第一振盪晶體及/或第二振盪晶體交換熱,高溫對沈積率測量之品質、準確性及穩定性之負面效應可減少或甚至消除。特別是,藉由與如此處所述之測量組件交換熱,第一振盪晶體及/或第二振盪晶體之熱波動(thermal fluctuations)可減少或甚至消除,因而可有利於沈積率測量之準確性。因此,應用如此處所述之用以測量沈積率之方法可有利於高品質之顯示器製造,特別是OLED製造。According to several embodiments, which can be combined with other embodiments described herein, measuring 440 deposition rate can include exchanging heat with the measurement assembly 100 by a temperature control system as described herein, particularly with the first oscillating crystal and/or The second oscillating crystal exchanges heat. Thus, by exchanging heat with the measuring assembly as described herein, particularly with the first oscillating crystal and/or the second oscillating crystal, the negative effects of high temperature on the quality, accuracy and stability of the deposition rate measurement can be reduced. Or even eliminate it. In particular, the thermal fluctuations of the first oscillating crystal and/or the second oscillating crystal can be reduced or even eliminated by exchanging heat with the measuring assembly as described herein, thereby facilitating the accuracy of the deposition rate measurement. . Therefore, the application of the method for measuring the deposition rate as described herein can facilitate high quality display manufacturing, particularly OLED manufacturing.
範例性參照第7B圖,根據可與此處所述其他實施例結合之數個實施例,用以測量已蒸發材料之沈積率之方法400可更包括當已蒸發材料至第一振盪晶體之出入口係由根據此處所述實施例之可移動遮門阻擋時,藉由提供熱至第一振盪晶體來清洗450第一振盪晶體。因此,用以測量已蒸發材料之沈積率之方法400可更包括當已蒸發材料至第二振盪晶體之出入口係由根據此處所述實施例之可移動遮門阻擋時,藉由提供熱至第二振盪晶體來清洗450第二振盪晶體。By way of example with reference to Figure 7B, the method 400 for measuring the deposition rate of evaporated material may further include when the material has evaporated to the entrance and exit of the first oscillating crystal, according to several embodiments that may be combined with other embodiments described herein. The 450 first oscillating crystal is cleaned 450 by providing heat to the first oscillating crystal when blocked by a movable shutter according to embodiments described herein. Accordingly, the method 400 for measuring the deposition rate of the evaporated material may further include providing heat to the inlet and outlet of the second oscillating crystal when the inlet and outlet of the second oscillating crystal are blocked by the movable shutter according to the embodiments described herein. The second oscillating crystal cleans the 450 second oscillating crystal.
有鑑於上述,如此處所述之用以測量已蒸發材料之沈積率之測量組件之實施例、蒸發源之實施例、沈積設備之實施例及用以測量沈積率之方法之實施例係提供多餘地測量沈積率之可能性,及在其他振盪晶體係使用於沈積率測量時,提供清洗第一振盪晶體及第二振盪晶體之其中一者之可能性。因此,用於高品質之顯示器製造之改善之沈積率測量可提供,舉例為高品質之OLED製造之改善之沈積率測量可提供。綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In view of the above, embodiments of the measuring assembly, the embodiment of the evaporation apparatus, the embodiment of the deposition apparatus, and the method for measuring the deposition rate, as described herein for measuring the deposition rate of the evaporated material, provide redundancy. The possibility of measuring the deposition rate and the possibility of cleaning one of the first oscillating crystal and the second oscillating crystal when other oscillating crystal systems are used for the deposition rate measurement. Thus, improved deposition rate measurements for high quality display manufacturing can provide, for example, improved deposition rate measurements for high quality OLED fabrication. In conclusion, the present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
(下方之符號說明係直接以修改後之版本填寫)(The symbol description below is directly filled in with the modified version)
100‧‧‧測量組件100‧‧‧Measurement components
110‧‧‧第一振盪晶體110‧‧‧First oscillating crystal
114‧‧‧加熱器114‧‧‧heater
115‧‧‧其他加熱器115‧‧‧Other heaters
116‧‧‧熱保護遮罩物116‧‧‧ Thermal protective coverings
117‧‧‧溫度感測器117‧‧‧temperature sensor
120‧‧‧第二振盪晶體120‧‧‧Second oscillating crystal
122‧‧‧測量開孔122‧‧‧Measurement opening
132‧‧‧熱加換器132‧‧‧Hot adder
133‧‧‧感測器控制器133‧‧‧Sensor Controller
140‧‧‧可移動遮門140‧‧‧ movable cover
150‧‧‧支承件150‧‧‧Support
151‧‧‧第ㄧ測量出口151‧‧‧ Dijon measurement export
152‧‧‧第二測量出口152‧‧‧Second measurement exit
160‧‧‧孔160‧‧‧ hole
161‧‧‧第一孔161‧‧‧ first hole
162‧‧‧第二孔162‧‧‧ second hole
163‧‧‧第三孔163‧‧‧ third hole
164‧‧‧第四孔164‧‧‧ fourth hole
170、215‧‧‧加熱元件170, 215‧‧‧ heating elements
171‧‧‧第一加熱元件171‧‧‧First heating element
172‧‧‧第二加熱元件172‧‧‧Second heating element
173‧‧‧第三加熱元件173‧‧‧ Third heating element
174‧‧‧第四加熱元件174‧‧‧fourth heating element
175‧‧‧第五加熱元件175‧‧‧ fifth heating element
176‧‧‧第六加熱元件176‧‧‧ sixth heating element
177‧‧‧第一環區段加熱元件177‧‧‧First ring section heating element
178‧‧‧第二環區段加熱元件178‧‧‧Second ring section heating element
200‧‧‧蒸發源200‧‧‧ evaporation source
202‧‧‧支撐件202‧‧‧Support
204‧‧‧遮罩物204‧‧‧Mask
210‧‧‧蒸發坩鍋210‧‧‧Evaporation crucible
216‧‧‧冷卻元件216‧‧‧ cooling element
220‧‧‧分佈管220‧‧‧Distribution tube
222‧‧‧出口222‧‧‧Export
224A‧‧‧背側224A‧‧‧ Back side
224B‧‧‧側壁224B‧‧‧ side wall
224C‧‧‧頂牆224C‧‧‧Top wall
225‧‧‧坩鍋加熱單元225‧‧‧坩heater unit
250‧‧‧控制器250‧‧‧ Controller
251‧‧‧第一控制訊號251‧‧‧First control signal
252‧‧‧第二控制訊號252‧‧‧Second control signal
300‧‧‧沈積設備300‧‧‧Deposition equipment
305‧‧‧第一閥305‧‧‧first valve
307‧‧‧第二閥307‧‧‧Second valve
310‧‧‧真空腔室310‧‧‧vacuum chamber
311‧‧‧維護真空腔室311‧‧‧Maintenance vacuum chamber
312‧‧‧對準單元312‧‧‧Alignment unit
320‧‧‧線性導件320‧‧‧Linear Guides
326‧‧‧基板支撐件326‧‧‧Substrate support
331‧‧‧遮罩框架331‧‧‧mask frame
332‧‧‧遮罩332‧‧‧ mask
333‧‧‧基板333‧‧‧Substrate
400‧‧‧方法400‧‧‧ method
410、420、430、440、450‧‧‧流程步驟410, 420, 430, 440, 450‧‧‧ process steps
R‧‧‧半徑R‧‧‧ Radius
α‧‧‧角度‧‧‧‧ angle
為了使本揭露的上述特徵可詳細地瞭解,簡要摘錄於上之本揭露之更特有之說明可參照數個實施例。所附之圖式係有關於本揭露之數個實施例且係說明於下方。 第1A至1C圖繪示根據此處所述實施例之在不同狀態中之用以測量已蒸發材料之沈積率之測量組件之示意圖; 第2A至2D圖繪示根據此處所述其他實施例之在不同狀態中之用以測量已蒸發材料之沈積率之測量組件之示意圖; 第3圖繪示根據此處所述其他實施例之測量組件之部份之示意圖; 第4A及4B圖繪示根據此處所述實施例之蒸發源之側視圖; 第5圖繪示根據此處所述實施例之蒸發源之透視圖; 第6圖繪示根據此處所述實施例之用以在真空腔室中供應材料於基板上之沈積設備之頂視圖;以及 第7A及7B圖繪示說明如此處所述之用以測量已蒸發材料之沈積率之方法之實施例的方塊圖。In order to make the above-described features of the present disclosure more detailed, a more detailed description of the present disclosure may be made by reference to the several embodiments. The accompanying drawings are in connection with the several embodiments of the disclosure and are described below. 1A to 1C are schematic views showing measurement components for measuring the deposition rate of evaporated materials in different states according to embodiments described herein; FIGS. 2A to 2D are diagrams showing other embodiments according to the embodiments herein. A schematic diagram of a measurement component for measuring the deposition rate of an evaporated material in different states; FIG. 3 is a schematic diagram of a portion of a measurement component according to other embodiments described herein; FIGS. 4A and 4B are diagrams Side view of an evaporation source according to embodiments described herein; FIG. 5 is a perspective view of an evaporation source according to embodiments described herein; and FIG. 6 is a view showing a vacuum according to embodiments described herein A top view of a deposition apparatus for supplying material on a substrate in a chamber; and FIGS. 7A and 7B are block diagrams illustrating an embodiment of a method for measuring a deposition rate of an evaporated material as described herein.
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KR102662181B1 (en) * | 2018-11-28 | 2024-04-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Deposition source, deposition apparatus, and methods for depositing evaporation material |
WO2021052593A1 (en) * | 2019-09-19 | 2021-03-25 | Applied Materials, Inc. | Evaporation source, shutter device, and evaporation method |
DE102019128515A1 (en) * | 2019-10-22 | 2021-04-22 | Apeva Se | Procedure for operating a QCM sensor |
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CH537987A (en) * | 1971-02-10 | 1973-06-15 | Balzers Patent Beteilig Ag | Device for monitoring vapor deposition during vacuum deposition of thin layers |
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US20080241366A1 (en) * | 2007-03-29 | 2008-10-02 | Intevac Corporation | Apparatus for and method of applying lubricant coatings to magnetic disks via a vapor flow path including a selectively opened and closed shutter |
US20080241367A1 (en) * | 2007-03-29 | 2008-10-02 | Intevac Corporation | Apparatus for and method of applying lubricant coatings to magnetic disks via a vapor flow path including a selectively opened and closed shutter |
JP2012126938A (en) * | 2010-12-14 | 2012-07-05 | Ulvac Japan Ltd | Vacuum deposition device and method for forming thin film |
JP2015117397A (en) * | 2013-12-17 | 2015-06-25 | 株式会社日立ハイテクファインシステムズ | Vapor deposition apparatus |
DE102014102484A1 (en) * | 2014-02-26 | 2015-08-27 | Aixtron Se | Use of a QCM sensor to determine the vapor concentration in the OVPD process or in an OVPD coating system |
CN104165573B (en) * | 2014-05-13 | 2016-05-11 | 京东方科技集团股份有限公司 | A kind of measurement mechanism and filming equipment |
JP6448279B2 (en) * | 2014-09-30 | 2019-01-09 | キヤノントッキ株式会社 | Vacuum deposition equipment |
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2016
- 2016-10-25 WO PCT/EP2016/075681 patent/WO2018077388A1/en active Application Filing
- 2016-10-25 CN CN201680070126.3A patent/CN108291291A/en active Pending
- 2016-10-25 JP JP2017560167A patent/JP2018538429A/en active Pending
- 2016-10-25 KR KR1020177035240A patent/KR20180067463A/en not_active Application Discontinuation
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2017
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TWI759913B (en) * | 2020-10-16 | 2022-04-01 | 天虹科技股份有限公司 | Detection system and method of film thickness of atomic layer deposition |
Also Published As
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WO2018077388A1 (en) | 2018-05-03 |
KR20180067463A (en) | 2018-06-20 |
CN108291291A (en) | 2018-07-17 |
JP2018538429A (en) | 2018-12-27 |
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