Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
  • C23C14/542—Controlling the film thickness or evaporation rate
  • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
  • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/04—Coating on selected surface areas, e.g. using masks
  • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/12—Organic material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/24—Vacuum evaporation
  • C23C14/243—Crucibles for source material
• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
  • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
  • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
  • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
  • G01B7/063—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
  • G01B7/066—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02104—Forming layers
  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

• the present disclosure relates to a measurement assembly for measuring a deposition rate of an evaporated material, an evaporation source for evaporation of material, a deposition apparatus for applying material to a substrate and a method for measuring a deposition rate of an evaporated material.
• the present disclosure particularly relates to a measurement assembly for measuring a deposition rate of an evaporated organic material and a method therefor. Further, the present disclosure particularly relates to devices including organic materials therein, e.g. an evaporation source and a deposition apparatus for organic material.
• Organic evaporators are a tool for the production of organic light-emitting diodes (OLED).
• OLEDs are a special type of light-emitting diode in which the emissive layer comprises a thin-film of certain organic compounds.
• Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc., for displaying information.
• OLEDs can also be used for general space illumination.
• the range of colors, brightness, and viewing angle possible with OLED displays is greater than that of traditional LCD displays because OLED pixels directly emit light and do not involve a back light. Therefore, the energy consumption of OLED displays is considerably less than that of traditional LCD displays.
• OLEDs can be manufactured onto flexible substrates results in further applications.
• the functionality of an OLED depends on the coating thickness of the organic material. This thickness has to be within a predetermined range.
• the deposition rate at which the coating with organic material is effected is controlled to lie within a predetermined tolerance range. In other words, the deposition rate of an organic evaporator has to be controlled thoroughly in the production process.
• a measurement assembly for measuring a deposition rate of an evaporated material an evaporation source, a deposition apparatus and a method for measuring a deposition rate of an evaporated material according to the independent claims are provided.
• a measurement assembly for measuring a deposition rate of an evaporated material.
• the measurement assembly includes a first oscillation crystal for measuring the deposition rate; a second oscillation crystal for measuring the deposition rate; and a movable shutter.
• the movable shutter is configured for blocking the evaporated material provided from a first measurement outlet, the first measurement outlet directed for providing evaporated material to the first oscillation crystal. Further, the movable shutter is configured for blocking the evaporated material provided from a second measurement outlet, the second measurement outlet directed for providing evaporated material to the second oscillation crystal.
• an evaporation source for evaporation of material includes an evaporation crucible, wherein the evaporation crucible is configured to evaporate a material; a distribution assembly with one or more outlets for providing evaporated material.
• the distribution assembly is in fluid communication with the evaporation crucible.
• the evaporation source includes a measurement assembly according to any embodiment described herein.
• a deposition apparatus for applying material to a substrate in a vacuum chamber at a deposition rate is provided.
• the deposition apparatus includes at least one evaporation source according to any embodiment described herein.
• a method for measuring a deposition rate of an evaporated material includes evaporating a material; applying a first portion of the evaporated material to a substrate; diverting a second portion of the evaporated material to a first oscillation crystal and/or a second oscillation crystal; and measuring the deposition rate by using the measurement assembly according to any embodiment described herein.
• FIGS. 1A to 1C show schematic views of a measurement assembly for measuring a deposition rate of an evaporated material according to embodiments described herein in different states;
• FIGS. 2 A to 2D show schematic views of a measurement assembly for measuring a deposition rate of an evaporated material according to further embodiments described herein in different states;
• FIG. 3 shows a schematic view of a portion of a measurement assembly according to further embodiments described herein;
• FIGS. 4 A and 4B show schematic side views of an evaporation source according to embodiments described herein;
• FIG. 5 shows a schematic perspective view of an evaporation source according to embodiments described herein;
• FIG. 6 shows a schematic top view of a deposition apparatus for applying material to a substrate in a vacuum chamber according to embodiments described herein; and FIGS. 7 A and 7B show block diagrams illustrating embodiments of a method for measuring a deposition rate of an evaporated material as described herein.
• an "oscillation crystal for measuring a deposition rate” may be understood as an oscillation crystal for measuring a mass variation of deposited material on the oscillation crystal per unit area by measuring the change in frequency of an oscillation crystal resonator.
• an oscillation crystal may be understood as a quartz crystal resonator.
• an "oscillation crystal for measuring a deposition rate” may be understood as a quartz crystal microbalance (QCM).
• a "movable shutter” may be understood as a movable element which is arranged between a measurement assembly and a measurement outlet for providing evaporated material to the measurement assembly.
• a “movable shutter” may be understood as an element which is configured to be moved in a space between the measurement assembly and the measurement outlet.
• the movable shutter may be configured to be movable along a transversal direction.
• the movable shutter may be configured to be rotatable.
• the movable shutter is configured for blocking a flow of evaporated material provided through the measurement outlet in a first state of the movable shutter as well as for unblocking a flow of evaporated material provided through the measurement outlet in a second state of the movable shutter. Accordingly, the movable shutter is configured for controlling an access of evaporated material to the measurement assembly.
• an "evaporation source for evaporation of material” may be understood as an arrangement configured for providing a material to be deposited on a substrate.
• the evaporation source may be configured for providing material to be deposited on a substrate in a vacuum chamber, such as a vacuum deposition chamber of a vacuum deposition apparatus.
• the evaporation source may include an evaporator or a crucible, which evaporates the material to be deposited on the substrate, and a distribution assembly, e.g. a distribution pipe or one or more point sources which can be arranged along a vertical axis.
• the distribution assembly can be configured to release the evaporated material in a direction towards the substrate, e.g. through an outlet or a nozzle.
• a "crucible” may be understood as a device or a reservoir providing or containing the material to be deposited.
• the crucible may be heated for evaporating the material to be deposited on the substrate.
• the crucible may stand in fluid communication with a distribution assembly, to which the material being evaporated by the crucible may be delivered.
• the crucible may be a crucible for evaporating organic materials, e.g. organic materials having an evaporation temperature of about 100°C to about 600°C.
• fluid communication may be understood in that two elements being in fluid communication can exchange fluid via a connection, allowing fluid to flow between the two elements.
• the elements being in fluid communication may include a hollow structure, through which the fluid may flow.
• at least one of the elements being in fluid communication may be a pipe-like element.
• a “distribution assembly” may be understood as a distribution pipe for guiding and distributing the evaporated material or as one or more point sources which can be arranged along a vertical axis.
• the distribution pipe or the one or more point sources may be configured for providing evaporated material from an evaporator to an outlet (such as nozzles or openings) in the distribution pipe or the one or more point sources.
• the distribution pipe in the case of a distribution assembly in the form of a distribution pipe, can be a linear distribution pipe extending in a longitudinal direction.
• the distribution pipe may include a pipe having the shape of a cylinder, wherein the cylinder may have a circular, triangular or square-like bottom shape or any other suitable bottom shape.
• a measurement assembly 100 for measuring a deposition rate of an evaporated material includes a first oscillation crystal 110 for measuring the deposition, a second oscillation crystal 120 for measuring the deposition rate, and a movable shutter 140.
• the movable shutter 140 is configured for blocking the evaporated material provided from a first measurement outlet 151 for providing evaporated material to the first oscillation crystal 110.
• the first measurement outlet 151 is directed for providing evaporated material to the first oscillation crystal 110.
• the movable shutter 140 is configured for blocking the evaporated material provided from a second measurement outlet 152.
• the second measurement outlet 152 is directed for providing evaporated material to the second oscillation crystal 120.
• FIG. 1A shows the measurement assembly in a first state in which the second measurement outlet 152 is blocked by the movable shutter 140 such that an access of evaporated material provided through the second measurement outlet 152 to the second oscillation crystal 120 is blocked.
• the measurement assembly may be configured such that an access of evaporated material provided through the first measurement outlet 151 to the first oscillation crystal 110 is provided while the second measurement outlet 152 is blocked.
• a deposition rate may be measured by the first oscillation crystal 110 while the second oscillation crystal 120 may be cleaned.
• the second oscillation crystal 120 can be cleaned by heating, particularly by providing a heating temperature which corresponds to the evaporation temperature of evaporated material deposited on the second oscillation crystal 120.
• the heating temperature can be provided by a heating element provided in the movable shutter 140 and/or a heating element provided in a holder for the second oscillation crystal 120.
• FIG. IB shows a second state of the measurement assembly in which the movable shutter 140 has been moved to a position in which the first measurement outlet 151 as well as the second measurement outlet 152 are open for providing an access of evaporated material to both the first oscillation crystal 110 and the second oscillation crystal 120. Accordingly, the first oscillation crystal 110 and the second oscillation crystal 120 may be employed for measuring a deposition rate, such that a redundant measurement can be carried out.
• FIG. 1C a third state of the measurement assembly is shown in which the movable shutter 140 has been moved to a position in which an access of evaporated material provided through the first measurement outlet 151 to the first oscillation crystal 110 is blocked. Accordingly, as exemplarily shown in FIG.
• a deposition rate may be measured by the second oscillation crystal 120 while the first oscillation crystal 110 may be cleaned.
• the first oscillation crystal 110 can be cleaned by heating, particularly by providing a heating temperature which corresponds to the evaporation temperature of evaporated material deposited on the first oscillation crystal 110.
• the heating temperature can be provided by a heating element provided in the movable shutter 140 and/or a heating element provided in a holder for the first oscillation crystal 110.
• the movable shutter may be connected to a drive, for instance a linear drive, which is configured for providing a translational movement of the movable shutter, which is exemplarily indicated by the arrow on the movable shutter 140 in FIGS. 1A and 1C.
• the drive may be configured for moving the movable shutter between a state in which the first measurement outlet is blocked and a second state in which the second measurement outlet is blocked.
• the drive can be configured for a linear transversal alternating movement for blocking/unblocking the first measurement outlet and the second measurement outlet.
• a measurement assembly as described herein provides for the possibility to continuously measure a deposition rate of evaporated material.
• a measurement assembly with which the deposition rate can be measured by a first oscillation crystal while a second oscillation crystal can be cleaned, an improved measurement assembly is provided.
• a negative effect of deposited material on the accuracy of the deposition rate measurement can be reduced or even eliminated, since the first oscillation crystal and the second oscillation crystal may be cleaned in an alternating manner.
• the measurement assembly as described herein provides for the possibility of conducting a redundant deposition rate measurement. For instance, in a state of the measurement assembly in which the first measurement outlet and the second measurement outlet are open, i.e.
• the movable shutter 140 may be a rotatable element having at least one aperture 160.
• the at least one aperture 160 can be configured for providing access for the evaporated material provided from the first measurement outlet to the first oscillation crystal 110 when the rotatable element is in a first state, as exemplarily shown in FIG.
• the rotatable element may be a rotatable disk having a substantially circular shape as exemplarily shown in FIGS. 2 A to 2D.
• the rotatable element may be a rotatable plate having an elliptical, rectangular or any other suitable shape.
• the rotatable element may be connected to a drive which is configured for providing a rotational movement around a rotational axis of the rotatable element, as exemplarily shown FIGS. 2 A to 2D.
• the at least one aperture 160 is configured for providing access for the evaporated material provided from the second measurement outlet to the second oscillation crystal 120 when the rotatable element is in a second state.
• an access for the evaporated material provided from the second measurement outlet to the second oscillation crystal 120 can be provided when the rotatable element with the at least one aperture is turned by 180° from the first state, as exemplarily shown in FIG. 2A, to the second state.
• the at least one aperture 160 may include a first aperture 161 and a second aperture 162 which are arranged diametrically opposed to each other. Such a configuration is in particular beneficial for providing a simultaneous access of evaporated material to the first oscillation crystal and the second oscillation crystal such that a redundant to position measurement can be carried out.
• the at least one aperture 160 may include a third aperture 163 and a fourth aperture 164, which can be arranged on opposing sides of the first aperture 161, as exemplarily shown in FIGS. 2 A to 2C.
• the third aperture 163 and the fourth aperture 164 can be arranged on opposing sides of second aperture 162 (not explicitly shown).
• the third aperture 163 and the fourth aperture 164 can be arranged at a radial position which substantially corresponds to a radial position of the first aperture 161 and/or the radial position of the second aperture 162.
• the radial position of the at least one aperture e.g. the radial position of the first aperture 161, the second aperture 162, the third aperture 163, and the fourth aperture 164 is exemplarily indicated in FIGS. 2 A to 2D by the arrow R and the dotted circle line.
• a movable shutter can be provided with which four different states can be realized: a first state in which an access of evaporated material provided through the first measurement outlet is provided to the first oscillation crystal 110, while an access of evaporated material provided through the second measurement outlet to the second oscillation crystal 120 is blocked, as exemplarily shown in FIG.
• FIG. 2A a second state in which the first measurement outlet and the second measurement outlet are blocked, as exemplarily shown in FIG. 2B; a third state in which an access of evaporated material provided through the second measurement outlet to the second oscillation crystal 120 is provided, while an access of evaporated material provided through the first measurement to the first oscillation crystal 110 outlet is blocked, as exemplarily shown in FIG. 2C; and a fourth state in which an access of evaporated material provided through the second measurement outlet to the second oscillation crystal 120 and an access of evaporated material provided through the first measurement outlet to the first oscillation crystal 110 is provided.
• the movable shutter of the measurement assembly as described herein is configured for blocking/unblocking the evaporated material provided from the first measurement outlet to the first oscillation crystal as well as for blocking/unblocking the evaporated material provided from the second measurement outlet to the second oscillation crystal.
• the first oscillation crystal can be cleaned, e.g. by heating, when the first measurement outlet is blocked while at the same time a deposition rate measurement can be carried out with the second oscillation crystal, and vice versa.
• an improved measurement assembly is provided with which a continuous deposition rate measurement can be carried out.
• the measurement assembly according to embodiments described herein provides for the possibility of in-situ cleaning of the oscillation crystal used for measuring.
• the first oscillation crystal 110 and the second oscillation crystal 120 can fixed to a holder 150.
• the holder 150 may include at least one heating element 170 which is configured and arranged such that material deposited on the shutter, particularly material deposited on a side of the shutter which faces the holder, can be evaporated by applying heat. Accordingly, the shutter can be cleaned form material deposited on the shutter. For instance, as exemplarily shown in Fig.
• At least one heating element 170 may include a first heating element 171 and/or a second heating element 172 and/or a third heating element 173 and/or a fourth heating element 174 and/or a fifth heating element 175 and/or a sixth heating element 176.
• the heating elements may be arranged on the holder 150 in a circular manner, for example on a circle with a radius R which substantially corresponds to the radius R at which the at least one aperture 160 is provided in the movable shutter 140.
• the heating elements are arranged equally spaced to each other, for example with an angle of 45° between neighboring heating elements, as exemplarily shown in FIG. 2C.
• FIG. 2C Alternatively, as exemplarily shown in FIG.
• the at least one heating element 170 may be configured as a ring segment element having a width corresponding to at least the opening of the at least one aperture 160, as exemplarily shown in FIG. 2D.
• a first ring segment heating element 177 and a second ring segment heating element 178 may be provided.
• the at least one heating element 170 may have any suitable shape or configuration.
• the measurement assembly may include a heater 114 configured for applying heat to the first oscillation crystal 110 and/or the second oscillation crystal 120, such that material deposited on the first oscillation crystal 110 and/or the second oscillation crystal 120 can be evaporated.
• the heater 114 may be provided in a holder 150 in which the first oscillation crystal 110 and/or the second oscillation crystal 120 may be arranged.
• the holder 150 may include a measurement opening 122, which can be configured and arranged such that evaporated material may be deposited on the first oscillation crystal 110 and/or the second oscillation crystal 120 for measuring the deposition rate of the evaporated material.
• a further heater 115 may be provided in the movable shutter 140, e.g. in a movable shutter as described with reference to FIGS. 1A to 1C or a movable shutter as described with reference to FIGS 2 A to 2D.
• the further heater 115 provided in the movable shutter 140 is configured for applying heat to the movable shutter such that material deposited on the movable shutter can be evaporated.
• the heater 114 and/or the further heater 115 are configured for providing a heating temperature which corresponds to at least the evaporation temperature of the material deposited on the oscillation crystal and/or deposited on the shutter. Accordingly, the oscillation crystal may be cleaned by heating as described herein. Further, also the shutter may be cleaned by heating the shutter.
• the movable shutter 140 may include a thermal protection shield 116.
• the thermal protection shield 116 may be arranged on a side of the movable shutter 140 which faces the measurement outlet, e.g. the first measurement outlet 151 or the second measurement outlet 152.
• the thermal protection shield 116 may be configured for reflecting heat energy provided by evaporated material provided through the measurement outlet.
• the thermal protection shield 116 may be a plate, for example a sheet metal.
• the thermal protection shield 116 may include two or more plates, e.g.
• the thermal protection shield includes a ferrous or non-ferrous material, for example at least one material selected from the group consisting of copper (Cu), aluminum (Al), copper alloy, aluminum alloy, brass, iron, titanium (Ti), ceramic and other suitable materials.
• the further heater 115 of the movable shutter 140 may be provided on a side of the movable shutter 140 which faces the oscillation crystal, e.g. the first oscillation crystal 110 or the second oscillation crystal 120. Accordingly, by providing a heater as described herein, for instance in the holder or a shutter, an oscillation crystal of a measurement assembly as described herein may be cleaned in situ by evaporating deposited material on the oscillation crystal by applying heat by the heater. This can be beneficial for the overall lifetime of the oscillation crystal and the achievable measurement accuracy.
• the measurement assembly 100 may include a heat exchanger 132.
• the heat exchanger may be arranged in the holder, for example next to or adjacent to the oscillation crystal and/or next to or adjacent to the heater 114.
• the heat exchanger 132 may be configured to exchange heat with the oscillation crystal and/or with the holder 150 and/or with the heater 114.
• the heat exchanger may include tubes through which a cooling fluid may be provided.
• the cooling fluid may be a liquid, e.g. water, or a gas, e.g. air.
• the heat exchanger may include one or more Peltier element(s).
• the heat exchanger is employed during a measurement of the oscillation crystal and switched off during a cleaning procedure conducted by heating the oscillation crystal by the heater. Accordingly, by providing the measurement assembly with a heat exchanger 132, negative effects of high temperature on the quality, accuracy and stability of the deposition rate measurement may be reduced or even eliminated. In particular, providing the measurement assembly with a heat exchanger may be beneficial for cooling the measurement device after the measurement device has been cleaned by heating in order to evaporate deposited material from the deposition rate measurement device.
• the measurement assembly 100 may include a temperature sensor 117 for measuring the temperature of the oscillation crystal and/or the holder 150.
• a temperature sensor 117 for measuring the temperature of the oscillation crystal and/or the holder 150.
• information about the temperature of the measurement assembly may be obtained such that a critical temperature at which the oscillation crystal tends to measure inaccurately may be detected. Accordingly, in the case that a critical temperature of the oscillation crystal is detected by the temperature sensor, an adequate reaction may be initiated, for example a cooling by employing the heat exchanger.
• the measurement assembly 100 may include a temperature control system for controlling the temperature of the oscillation crystal and/or the temperature of the holder.
• the temperature control system may include one or more of a temperature sensor 117, a heat exchanger 132, a heater 114 and a sensor controller 133.
• the sensor controller 133 may be connected to the temperature sensor 117 for receiving data measured by the temperature sensor 117.
• the sensor controller 133 may be connected to the heat exchanger 132 for controlling the temperature of the holder 150 and/or oscillation crystal.
• FIGS. 4 A and 4B show schematic side views of an evaporation source 200 according to embodiments as described herein.
• the evaporation source 200 includes an evaporation crucible 210, wherein the evaporation crucible is configured to evaporate a material, for example an organic material.
• the evaporation source 200 includes a distribution assembly, e.g. a distribution pipe 220, with one or more outlets 222 provided along the length of the distribution assembly for providing evaporated material, as exemplarily shown in FIG.
• the distribution pipe 220 is in fluid communication with the evaporation crucible 210, for example via a vapor conduit.
• the vapor conduit can be provided at the lower end of the distribution pipe.
• the evaporation source 200 according to embodiments described herein includes a measurement assembly 100 according to embodiments described herein, as for example described with reference to FIGS. 1A through FIG. 3.
• the evaporation source 200 may include a controller 250 connected to the measurement assembly 100 and to the evaporation source 200.
• the controller 250 may provide a first control signal 251 to the evaporation source 200, particularly the evaporation crucible 210, for adjusting the deposition rate.
• the controller 250 is configured to receive and analyze the measurement data acquired by the measurement assembly 100.
• the controller 250 may provide a second control signal 252 to the deposition rate measurement assembly, e.g. for controlling a position of the shutter of the deposition rate measurement assembly.
• the position of the shutter may be controlled such that a first measurement outlet for providing evaporated material to the first oscillation crystal can be blocked by the shutter, and/or a second measurement outlet for providing evaporated material to the second oscillation crystal can be blocked by the shutter. Accordingly, one of the first oscillation crystal and the second oscillation crystal of the measurement assembly can be cleaned while the other oscillation crystal can be used for a deposition rate measurement.
• the distribution assembly may be an elongated cube, e.g. a distribution pipe 220, including a heating element 215.
• the evaporation crucible 210 can be a reservoir for material, e.g.
• the distribution assembly particularly the distribution pipe 220 may provide a line source.
• a plurality of outlets 222 such as nozzles, can be arranged along at least one line.
• one elongated opening e.g. a slit, extending along the at least one line may be provided.
• the line source may extend essentially vertically.
• the length of the distribution pipe may correspond to a height of a substrate onto which material is to be deposited in a deposition apparatus.
• the length of the distribution pipe may be longer than the height of the substrate onto which material is to be deposited, for example at least by 10% or even 20%. Accordingly, a uniform deposition at the upper end of the substrate and/or the lower end of the substrate can be provided.
• the length of the distribution pipe can be 1.3 m or above, for example 2.5 m or above.
• the evaporation crucible 210 may be provided at the lower end of the distribution pipe, as exemplarily shown in FIG. 4A.
• the material e.g. organic material
• the evaporated material may enter the distribution pipe at the bottom of the distribution pipe and may be guided essentially sideways through the plurality of outlets 222 in the distribution pipe 220, e.g. towards an essentially vertical substrate.
• the measurement assembly 100 according to embodiments described herein may be provided at an upper portion of the distribution pipe 220, e.g. at the upper end of the distribution pipe 220.
• a first measurement outlet 151 and a second measurement outlet 152 may be provided in a wall of the distribution assembly, for example in a wall at the backside 224A of the distribution pipe, particularly at an upper portion of the wall at the backside 224A.
• the first measurement outlet 151 and the second measurement outlet 152 may be provided in a top wall 224C of the distribution assembly, particularly an upper horizontal top wall of the distribution assembly. As exemplarily indicated by the arrows in FIG.
• the evaporated material may be provided from the inside of the distribution pipe 220 through the first measurement outlet 151 and/or the second measurement outlet 152 to the measurement assembly 100.
• the first measurement outlet 151 and/or the second measurement outlet 152 are arranged and directed such that evaporated material can be provided to the first oscillation crystal and/or the second oscillation crystal.
• the measurement assembly 100 can be arranged at the backside 224A of the distribution assembly, particularly at the backside 224A of an upper end portion of the distribution assembly, e.g. the distribution pipe 220.
• the backside of the end portion of the distribution assembly faces away from the deposition direction.
• the measurement assembly 100 can be mounted on the backside 224A of the upper end portion of the distribution assembly, particularly the distribution pipe 220.
• the first measurement outlet 151 and/or the second measurement outlet 152 may have an opening from 0.5 mm to 4 mm.
• the first measurement outlet 151 and/or the second measurement outlet 152 may include a nozzle.
• the nozzle may include an adjustable opening for adjusting the flow of evaporated material provided to the measurement assembly 100.
• the nozzle may be configured to provide a measurement flow selected from a range between a lower limit of 1/70 of the total flow provided by the evaporation source, particularly a lower limit of 1/60 of the total flow provided by the evaporation source, more particularly a lower limit of 1/50 of the total flow provided by the evaporation source and an upper limit of 1/40 of the total flow provided by the evaporation source, particularly an upper limit of 1/30 of the total flow provided by the evaporation source, more particularly an upper limit of 1/25 of the total flow provided by the evaporation source.
• the nozzle may be configured to provide a measurement flow of 1/54 of the total flow provided by the evaporation source.
• the distribution pipe 220 may be designed in a triangular shape.
• a triangular shape of the distribution pipe 220 may be beneficial in the case where two or more distribution pipes are arranged next to each other.
• a triangular shape of the distribution pipe 220 makes it possible to bring the outlets of neighboring distribution pipes as close as possible to each other. This allows for achieving an improved mixture of different materials from different distribution pipes, e.g. for the case of the co-evaporation of two, three or even more different materials.
• FIG. 1 shows a perspective view of an evaporation source 200 according to embodiments described herein.
• the distribution pipe 220 may be designed in a triangular shape.
• a triangular shape of the distribution pipe 220 may be beneficial in the case where two or more distribution pipes are arranged next to each other.
• a triangular shape of the distribution pipe 220 makes it possible to bring the outlets of neighboring distribution pipes as close as possible to each other. This allows for achieving an improved mixture of different materials from different distribution pipes,
• the distribution pipe 220 may include walls, e.g. side walls 224B and a wall at the backside 224A of the distribution pipe.
• the first measurement outlet 151 and the second measurement outlet 152 may be provided in the wall at the backside 224A of the distribution pipe 220.
• the side walls 224B and the wall at the backside 224 A can be heated by a heating element 215.
• the heating element 215 may be mounted or attached to the walls of the distribution pipe 220, as exemplarily shown in FIG. 5.
• the evaporation source 200 may include a shield 204.
• the shield 204 may reduce the heat radiation towards the deposition area.
• the shield 204 may be cooled by a cooling element 216.
• the 5 cooling element 216 may be mounted to the shield 204 and may include a conduit for cooling fluid.
• FIG. 6 shows a schematic top view of a deposition apparatus 300 for applying material to a substrate 333 in a vacuum chamber 310 according to embodiments described herein. According to embodiments which can be combined
• the deposition apparatus 300 includes an evaporation source 200 as described herein.
• the evaporation source 200 may be provided in a vacuum chamber 310 of the deposition apparatus 300, for example on a track, e.g. a linear guide 320 or a looped track.
• the track or the linear guide 320 may be configured for a translational movement of the evaporation source
• a drive for the translational movement can be provided for the evaporation source 200, at the track and/or the linear guide 320, within the vacuum chamber 310.
• a first valve 305 for example a gate valve, may be provided which allows for a vacuum seal to an adjacent vacuum chamber (not shown 0 in FIG. 6). The first valve can be opened for transport of a substrate 333 or a mask 332 into the vacuum chamber 310 or out of the vacuum chamber 310.
• a further vacuum chamber such as maintenance vacuum chamber 311 may be provided adjacent to the vacuum chamber 310, as 5 exemplarily shown in FIG. 6. Accordingly, the vacuum chamber 310 and the maintenance vacuum chamber 311 may be connected with a second valve 307. The second valve 307 may be configured for opening and closing a vacuum seal between the vacuum chamber 310 and the maintenance vacuum chamber 311. The evaporation source 200 can be transferred to the maintenance vacuum chamber 311
• the second valve 307 can be closed to provide a vacuum seal between the vacuum chamber 310 and the maintenance vacuum chamber 311. If the second valve 307 is closed, the maintenance vacuum chamber 311 can be vented and opened for maintenance of the evaporation source 200 without breaking the vacuum in the vacuum chamber 310.
• two substrates may be supported on respective transportation tracks within the vacuum chamber 310. Further, two tracks for providing masks thereon can be provided. Accordingly, during coating, the substrate 333 can be masked by respective masks.
• the mask may be provided in a mask frame 331 to hold the mask 332 in a predetermined position.
• the substrate 333 may be supported by a substrate support 326, which can be connected to an alignment unit 312.
• the alignment unit 312 may adjust the position of the substrate 333 with respect to the mask 332.
• the substrate support 326 may be connected to the alignment unit 312. Accordingly, the substrate may be moved relative to the mask 332 in order to provide for a proper alignment between the substrate and the mask during deposition of the material, which may be beneficial for high quality display manufacturing.
• the mask 332 and/or the mask frame 331 holding the mask 332 can be connected to the alignment unit 312. Accordingly, either the mask 332 can be positioned relative to the substrate 333 or the mask 332 and the substrate 333 can both be positioned relative to each other.
• the linear guide 320 may provide a direction of the trans lational movement of the evaporation source 200.
• a mask 332 may be provided on both sides of the evaporation source 200.
• the masks may extend essentially parallel to the direction of the translational movement.
• the substrates at the opposing sides of the evaporation source 200 can also extend essentially parallel to the direction of the translational movement.
• the evaporation source 200 provided in the vacuum chamber 310 of the deposition apparatus 300 may include a support 202 which may be configured for the translational movement along the linear guide 320.
• the support 202 may support two evaporation crucibles and two distribution pipes 220 provided over the respective evaporation crucible.
• the support 202 may support three evaporation crucibles and three distribution pipes 220 provided over the respective evaporation crucible. Accordingly, the vapor generated in the evaporation crucible can move upwardly and out of the one or more outlets of the distribution pipe.
• the distribution pipes of the evaporation source may have a substantially triangular cross-section. A triangular shape of the distribution pipe makes it possible to bring the outlets for depositing the evaporated material on a substrate, e.g. nozzles, of neighboring distribution pipes as close as possible to each other. This allows for achieving an improved mixture of different materials from different distribution pipes, e.g. for the case of the co-evaporation of two, three or even more different materials .
• embodiments of the deposition apparatus as described herein provide for improved quality display manufacturing, particularly OLED manufacturing.
• the method 400 for measuring a deposition rate of an evaporated material includes evaporating 410 an material, for example an organic material, applying 420 a first portion of the evaporated material to a substrate, diverting 430 a second portion of the evaporated material to a first oscillation crystal and/or a second oscillation crystal, and measuring 440 the deposition rate by using a measurement assembly 100 according to any embodiments described herein.
• the deposition rate may be measured very accurately.
• thermal effects on the oscillation crystal which can decrease the measurement accuracy may be reduced.
• negative effects of high temperature on the quality, accuracy and stability of the deposition rate measurement may be reduced or even eliminated.
• the method for measuring a deposition rate of an evaporated material according to embodiments described herein provides for measuring the deposition rate redundantly, which may further improve the quality and accuracy of the measurement result.
• the method for measuring a deposition rate of an evaporated material as described herein provides for the possibility to clean one of the first oscillation crystal and the second oscillation crystal while the other oscillation crystal can be used for a deposition rate measurement.
• evaporating 410 material incudes using an evaporation crucible 210 as described herein.
• applying 420 a first portion of the evaporated material to a substrate may include using an evaporation source 200 according to embodiments described herein.
• diverting 430 a second portion of the evaporated material to a first oscillation crystal and/or a second oscillation crystal may include using a first measurement outlet 151 and/or a second measurement outlet 152, as described herein.
• diverting 430 a second portion of the evaporated material to the first measurement outlet 151 and/or a second measurement outlet 152 may include providing a measurement flow selected from a range between a lower limit of 1/70 of the total flow provided by the evaporation source, particularly a lower limit of 1/60 of the total flow provided by the evaporation source, more particularly a lower limit of 1/50 of the total flow provided by the evaporation source and an upper limit of 1/40 of the total flow provided by the evaporation source, particularly an upper limit of 1/30 of the total flow provided by the evaporation source, more particularly an upper limit of 1/25 of the total flow provided by the evaporation source.
• diverting 430 a second portion of the evaporated material to the first measurement outlet 151 and/or a second measurement outlet 152 may include providing a measurement flow of 1/54 of the total flow provided by the evaporation source.
• measuring 440 the deposition rate may include exchanging heat with the measurement assembly 100, particularly with the first oscillation crystal and/or the second oscillation crystal, by a temperature control system as described herein. Accordingly, by exchanging heat with the measurement assembly as described herein, particularly with the first oscillation crystal and/or the second oscillation crystal, negative effects of high temperature on the quality, accuracy and stability of the deposition rate measurement may be reduced or even eliminated. In particular, by exchanging heat with the measurement assembly as described herein, thermal fluctuations of the first oscillation crystal and/or the second oscillation crystal may be reduced or even eliminated, which may be beneficial for the deposition rate measurement accuracy. Accordingly, employing the method for measuring a deposition rate as described herein may be beneficial for high quality display manufacturing, particularly OLED manufacturing.
• the method 400 for measuring a deposition rate of an evaporated material may further include cleaning 450 the first oscillation crystal by applying heat to the first oscillation crystal, when an access of the evaporated material to the first oscillation crystal is blocked by a movable shutter according to embodiments described herein. Accordingly, the method 400 for measuring a deposition rate of an evaporated material, the method may include cleaning 450 the second oscillation crystal by applying heat to the second oscillation crystal, when an access of the evaporated material to the second oscillation crystal is blocked by a movable shutter according to embodiments described herein.
• the embodiments of the measurement assembly for measuring a deposition rate of an evaporated material provide for the possibility of measuring the deposition rate redundantly as well as for the possibility to clean one of the first oscillation crystal and the second oscillation crystal while the other oscillation crystal is being used for a deposition rate measurement. Accordingly, an improved deposition rate measurement for high quality display manufacturing, for example high quality OLED manufacturing, can be provided.

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• 2016
  • 2016-10-25 KR KR1020177035240A patent/KR20180067463A/ko not_active Application Discontinuation
  • 2016-10-25 CN CN201680070126.3A patent/CN108291291A/zh active Pending
  • 2016-10-25 WO PCT/EP2016/075681 patent/WO2018077388A1/en active Application Filing
  • 2016-10-25 JP JP2017560167A patent/JP2018538429A/ja active Pending
• 2017
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